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JPS5424583A - Mos field effect transistor - Google Patents

Mos field effect transistor

Info

Publication number
JPS5424583A
JPS5424583A JP8944077A JP8944077A JPS5424583A JP S5424583 A JPS5424583 A JP S5424583A JP 8944077 A JP8944077 A JP 8944077A JP 8944077 A JP8944077 A JP 8944077A JP S5424583 A JPS5424583 A JP S5424583A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
mos field
mosfet
implanting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8944077A
Other languages
Japanese (ja)
Inventor
Toshihiko Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Original Assignee
Victor Company of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd filed Critical Victor Company of Japan Ltd
Priority to JP8944077A priority Critical patent/JPS5424583A/en
Publication of JPS5424583A publication Critical patent/JPS5424583A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Abstract

PURPOSE: To establish MOSFET's withstanding high voltage by avoiding electric field concentration around the surface, by implanting the drain in the bulk apart from the channel region.
COPYRIGHT: (C)1979,JPO&Japio
JP8944077A 1977-07-26 1977-07-26 Mos field effect transistor Pending JPS5424583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8944077A JPS5424583A (en) 1977-07-26 1977-07-26 Mos field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8944077A JPS5424583A (en) 1977-07-26 1977-07-26 Mos field effect transistor

Publications (1)

Publication Number Publication Date
JPS5424583A true JPS5424583A (en) 1979-02-23

Family

ID=13970729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8944077A Pending JPS5424583A (en) 1977-07-26 1977-07-26 Mos field effect transistor

Country Status (1)

Country Link
JP (1) JPS5424583A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799886U (en) * 1980-12-11 1982-06-19
US4589004A (en) * 1981-03-30 1986-05-13 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each other
WO2001037343A1 (en) * 1999-11-18 2001-05-25 Robert Bosch Gmbh Circuit configuration for protecting semi-conductor circuits against polarity reversal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929980A (en) * 1972-07-20 1974-03-16
JPS51134076A (en) * 1975-05-15 1976-11-20 Sony Corp Insultation gate-type field- effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929980A (en) * 1972-07-20 1974-03-16
JPS51134076A (en) * 1975-05-15 1976-11-20 Sony Corp Insultation gate-type field- effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799886U (en) * 1980-12-11 1982-06-19
JPS6210314Y2 (en) * 1980-12-11 1987-03-10
US4589004A (en) * 1981-03-30 1986-05-13 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each other
WO2001037343A1 (en) * 1999-11-18 2001-05-25 Robert Bosch Gmbh Circuit configuration for protecting semi-conductor circuits against polarity reversal

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