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JPS54149532A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS54149532A
JPS54149532A JP5847178A JP5847178A JPS54149532A JP S54149532 A JPS54149532 A JP S54149532A JP 5847178 A JP5847178 A JP 5847178A JP 5847178 A JP5847178 A JP 5847178A JP S54149532 A JPS54149532 A JP S54149532A
Authority
JP
Japan
Prior art keywords
digit line
digit
terminal
reducing
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5847178A
Other languages
Japanese (ja)
Other versions
JPS6255234B2 (en
Inventor
Masumi Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5847178A priority Critical patent/JPS54149532A/en
Priority to DE2919166A priority patent/DE2919166C2/en
Publication of JPS54149532A publication Critical patent/JPS54149532A/en
Priority to US06/237,815 priority patent/US4366559A/en
Publication of JPS6255234B2 publication Critical patent/JPS6255234B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To realize the stable and high-speed operation, low power consumption and high yield by reducing the capacity of a digit line by reducing the number of memory cells connected to one digit line by the use of a switching transistor. CONSTITUTION:To couples of input terminals of differential digit sense amplifiers SA1 to SA3, several digit lines are connected via switching elements respectively. As for the same sense amplifier, memory cells (M11 to M41) are connected to different address lines (A1 to A4) and each of reference cells (Mr11 to Mr41) is connected to each digit line. Then, the switching element of a digit line connected to a selected memory cell is made conductive and the corresponding switching element is also made conductive so that a reference terminal will be connected to one input terminal of the sense amplifier with the other terminal connected previously to the element.
JP5847178A 1978-05-12 1978-05-17 Semiconductor memory unit Granted JPS54149532A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5847178A JPS54149532A (en) 1978-05-17 1978-05-17 Semiconductor memory unit
DE2919166A DE2919166C2 (en) 1978-05-12 1979-05-11 Storage device
US06/237,815 US4366559A (en) 1978-05-12 1981-02-24 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5847178A JPS54149532A (en) 1978-05-17 1978-05-17 Semiconductor memory unit

Publications (2)

Publication Number Publication Date
JPS54149532A true JPS54149532A (en) 1979-11-22
JPS6255234B2 JPS6255234B2 (en) 1987-11-18

Family

ID=13085338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5847178A Granted JPS54149532A (en) 1978-05-12 1978-05-17 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS54149532A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5577083A (en) * 1978-12-04 1980-06-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory unit
JPS5823474A (en) * 1981-08-05 1983-02-12 Fujitsu Ltd semiconductor storage device
JPS6134792A (en) * 1984-07-25 1986-02-19 Toshiba Corp Semiconductor memory device
JPS6180587A (en) * 1984-09-25 1986-04-24 Nec Corp Semiconductor memory device
JPS61242396A (en) * 1985-04-19 1986-10-28 Nec Corp Semiconductor memory
JPH0765583A (en) * 1993-08-26 1995-03-10 Nec Corp Semiconductor storage device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50102231A (en) * 1974-01-09 1975-08-13
JPS5211733A (en) * 1975-07-10 1977-01-28 Burroughs Corp Differential detection amplifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50102231A (en) * 1974-01-09 1975-08-13
JPS5211733A (en) * 1975-07-10 1977-01-28 Burroughs Corp Differential detection amplifier

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5577083A (en) * 1978-12-04 1980-06-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory unit
JPS5823474A (en) * 1981-08-05 1983-02-12 Fujitsu Ltd semiconductor storage device
JPS6134792A (en) * 1984-07-25 1986-02-19 Toshiba Corp Semiconductor memory device
JPS6180587A (en) * 1984-09-25 1986-04-24 Nec Corp Semiconductor memory device
JPS61242396A (en) * 1985-04-19 1986-10-28 Nec Corp Semiconductor memory
JPH0765583A (en) * 1993-08-26 1995-03-10 Nec Corp Semiconductor storage device

Also Published As

Publication number Publication date
JPS6255234B2 (en) 1987-11-18

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