JPS54128268A - Multi-diffusion method of impurity - Google Patents
Multi-diffusion method of impurityInfo
- Publication number
- JPS54128268A JPS54128268A JP3555378A JP3555378A JPS54128268A JP S54128268 A JPS54128268 A JP S54128268A JP 3555378 A JP3555378 A JP 3555378A JP 3555378 A JP3555378 A JP 3555378A JP S54128268 A JPS54128268 A JP S54128268A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- layer
- type
- deposition
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title abstract 10
- 239000012535 impurity Substances 0.000 title abstract 3
- 239000011521 glass Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To eliminate the crystal defect of the semiconductor and to enable a high- density diffusion when the impurity diffusion region is formed on the semiconductor surface by using plural different kinds of impurities of the same conduction type to ensure the equivalent or individual diffusion at one region.
CONSTITUTION: P-type silicon substrate 11 is used to form the diffusion mask on the surface of the substrate via the heat oxide film. Then Sb-deposition layer 13 is formed through the vapor grawth as the 1st diffusion, and then fixed n-type diffusion layer 14 is formed by Sb. Layer 13 of the glass layer containing Sb is removed from the surface, and P-deposition layer 15 is formed through the vapor growth. Then the prescribed diffusion is given in stack via P to form necessary n+-type diffusion layer 16. Otherwise, glass film 17 containing Sb and P is formed by deposition or coating after forming the mask of the heat oxide film on the surface, and then film 17 is used as the source to diffuse Sb and P onto the surface at one time. Thus, n+-type diffusion layer 18 is obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3555378A JPS54128268A (en) | 1978-03-29 | 1978-03-29 | Multi-diffusion method of impurity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3555378A JPS54128268A (en) | 1978-03-29 | 1978-03-29 | Multi-diffusion method of impurity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54128268A true JPS54128268A (en) | 1979-10-04 |
Family
ID=12444909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3555378A Pending JPS54128268A (en) | 1978-03-29 | 1978-03-29 | Multi-diffusion method of impurity |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54128268A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4721684A (en) * | 1984-12-20 | 1988-01-26 | Sgs Microelettronica Spa | Method for forming a buried layer and a collector region in a monolithic semiconductor device |
-
1978
- 1978-03-29 JP JP3555378A patent/JPS54128268A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4721684A (en) * | 1984-12-20 | 1988-01-26 | Sgs Microelettronica Spa | Method for forming a buried layer and a collector region in a monolithic semiconductor device |
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