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JPS54111239A - Capacitor memory - Google Patents

Capacitor memory

Info

Publication number
JPS54111239A
JPS54111239A JP1887478A JP1887478A JPS54111239A JP S54111239 A JPS54111239 A JP S54111239A JP 1887478 A JP1887478 A JP 1887478A JP 1887478 A JP1887478 A JP 1887478A JP S54111239 A JPS54111239 A JP S54111239A
Authority
JP
Japan
Prior art keywords
memory cells
cells
dummy
meanwhile
digit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1887478A
Other languages
Japanese (ja)
Other versions
JPS6048075B2 (en
Inventor
Shunichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP53018874A priority Critical patent/JPS6048075B2/en
Publication of JPS54111239A publication Critical patent/JPS54111239A/en
Publication of JPS6048075B2 publication Critical patent/JPS6048075B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To make it possible to sense in a high speed by using dummy cells, which have the same circuit geometrical arrangement as memory cells, as a reference potential generator to drive dummy cells after memory cells at a reading time. CONSTITUTION:In the position corresponding to a reference potential generator, dummy cells DM1 and DM2 which have the same circuit constitution as memory cells MC1 and MC2 are arranged. Meanwhile, a sense amplifier is constituted by switch transistors ST1 and ST2 and load transistors RT1 and RT2. Meanwhile, trigger signal CL to drive an address driver is used as the trigger signal of a dummy cell driver through delay circuit DB. If memory cells keep 0V when digit lines DL1 and DL2 are precharged at 5V, the digit line becomes 4. 7V when memory cells become conductive; and meanwhile, if memory cells keep 10V, the digit time be comes 6V finally. Here, where dummy cell driving pulses are delayed, the output fromdumy cells becomes as shown by the dotted line and appears on DL2.
JP53018874A 1978-02-20 1978-02-20 capacitor memory Expired JPS6048075B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53018874A JPS6048075B2 (en) 1978-02-20 1978-02-20 capacitor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53018874A JPS6048075B2 (en) 1978-02-20 1978-02-20 capacitor memory

Publications (2)

Publication Number Publication Date
JPS54111239A true JPS54111239A (en) 1979-08-31
JPS6048075B2 JPS6048075B2 (en) 1985-10-25

Family

ID=11983682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53018874A Expired JPS6048075B2 (en) 1978-02-20 1978-02-20 capacitor memory

Country Status (1)

Country Link
JP (1) JPS6048075B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127499U (en) * 1982-02-22 1983-08-29 日本電気株式会社 memory circuit
JPS59116993A (en) * 1982-12-24 1984-07-06 Hitachi Ltd Semiconductor memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5354933A (en) * 1976-10-29 1978-05-18 Fujitsu Ltd Information reading method for semiconductor memory unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5354933A (en) * 1976-10-29 1978-05-18 Fujitsu Ltd Information reading method for semiconductor memory unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127499U (en) * 1982-02-22 1983-08-29 日本電気株式会社 memory circuit
JPS59116993A (en) * 1982-12-24 1984-07-06 Hitachi Ltd Semiconductor memory

Also Published As

Publication number Publication date
JPS6048075B2 (en) 1985-10-25

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