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JPS5396771A - Production of integrated circuit device - Google Patents

Production of integrated circuit device

Info

Publication number
JPS5396771A
JPS5396771A JP1196277A JP1196277A JPS5396771A JP S5396771 A JPS5396771 A JP S5396771A JP 1196277 A JP1196277 A JP 1196277A JP 1196277 A JP1196277 A JP 1196277A JP S5396771 A JPS5396771 A JP S5396771A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
circuit device
threshold voltage
channel type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1196277A
Other languages
Japanese (ja)
Inventor
Michihiro Oota
Toshiharu Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1196277A priority Critical patent/JPS5396771A/en
Publication of JPS5396771A publication Critical patent/JPS5396771A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a CMOS IC free from any variation in characteristics by so implanting an impurity that the control amount of the threshold voltage of an N channel type IGFET becomes 1/2 the controllable amount of the threshold voltage of a P channel type IGFET.
JP1196277A 1977-02-04 1977-02-04 Production of integrated circuit device Pending JPS5396771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1196277A JPS5396771A (en) 1977-02-04 1977-02-04 Production of integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1196277A JPS5396771A (en) 1977-02-04 1977-02-04 Production of integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5396771A true JPS5396771A (en) 1978-08-24

Family

ID=11792232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1196277A Pending JPS5396771A (en) 1977-02-04 1977-02-04 Production of integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5396771A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799038A (en) * 1980-12-12 1982-06-19 Seiko Epson Corp Interface circuit with transistor-transistor logic level
JPS6072259A (en) * 1983-08-26 1985-04-24 シ−メンス，アクチエンゲゼルシヤフト Method of producing high density integrated cmos field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799038A (en) * 1980-12-12 1982-06-19 Seiko Epson Corp Interface circuit with transistor-transistor logic level
JPS6072259A (en) * 1983-08-26 1985-04-24 シ−メンス，アクチエンゲゼルシヤフト Method of producing high density integrated cmos field effect transistor

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