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JPS53121561A - Mos integrated circuit device - Google Patents

Mos integrated circuit device

Info

Publication number
JPS53121561A
JPS53121561A JP3668377A JP3668377A JPS53121561A JP S53121561 A JPS53121561 A JP S53121561A JP 3668377 A JP3668377 A JP 3668377A JP 3668377 A JP3668377 A JP 3668377A JP S53121561 A JPS53121561 A JP S53121561A
Authority
JP
Japan
Prior art keywords
integrated circuit
mos integrated
circuit device
back bias
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3668377A
Other languages
Japanese (ja)
Other versions
JPS6042621B2 (en
Inventor
Tadaaki Tarui
Fujio Masuoka
Kazunori Ouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP52036683A priority Critical patent/JPS6042621B2/en
Publication of JPS53121561A publication Critical patent/JPS53121561A/en
Publication of JPS6042621B2 publication Critical patent/JPS6042621B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To obtain the high back bias voltage by providing the charge circuit in several steps to the elf-back bias circuit, and thus to realize a high speed of the MOS integrated circuit as well as a low power consumption.
JP52036683A 1977-03-31 1977-03-31 MOS integrated circuit device Expired JPS6042621B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52036683A JPS6042621B2 (en) 1977-03-31 1977-03-31 MOS integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52036683A JPS6042621B2 (en) 1977-03-31 1977-03-31 MOS integrated circuit device

Publications (2)

Publication Number Publication Date
JPS53121561A true JPS53121561A (en) 1978-10-24
JPS6042621B2 JPS6042621B2 (en) 1985-09-24

Family

ID=12476628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52036683A Expired JPS6042621B2 (en) 1977-03-31 1977-03-31 MOS integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6042621B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56143722A (en) * 1980-04-09 1981-11-09 Nec Corp Integrated substrate bias generating circuit
JPS59153331A (en) * 1983-02-21 1984-09-01 Toshiba Corp Semiconductor device
US4628215A (en) * 1984-09-17 1986-12-09 Texas Instruments Incorporated Drive circuit for substrate pump

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63199902U (en) * 1987-06-12 1988-12-22

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56143722A (en) * 1980-04-09 1981-11-09 Nec Corp Integrated substrate bias generating circuit
JPS59153331A (en) * 1983-02-21 1984-09-01 Toshiba Corp Semiconductor device
US4628215A (en) * 1984-09-17 1986-12-09 Texas Instruments Incorporated Drive circuit for substrate pump

Also Published As

Publication number Publication date
JPS6042621B2 (en) 1985-09-24

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