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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric CorpfiledCriticalMitsubishi Electric Corp
Priority to JP15813776ApriorityCriticalpatent/JPS5383575A/en
Publication of JPS5383575ApublicationCriticalpatent/JPS5383575A/en
PURPOSE:To reduce the crystal defect in the injection layer, by securing a nearly identical depth for the injury caused by the injected ion and the injury formed by the spatterd ion when the ion injection is carried out within the crystal via thin film.
JP15813776A1976-12-291976-12-29Formatin method of ion injection layer
PendingJPS5383575A
(en)