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JPS5378775A - Preparation for semiconductor device - Google Patents

Preparation for semiconductor device

Info

Publication number
JPS5378775A
JPS5378775A JP15531076A JP15531076A JPS5378775A JP S5378775 A JPS5378775 A JP S5378775A JP 15531076 A JP15531076 A JP 15531076A JP 15531076 A JP15531076 A JP 15531076A JP S5378775 A JPS5378775 A JP S5378775A
Authority
JP
Japan
Prior art keywords
film
base plate
preparation
semiconductor device
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15531076A
Other languages
Japanese (ja)
Other versions
JPS598061B2 (en
Inventor
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15531076A priority Critical patent/JPS598061B2/en
Publication of JPS5378775A publication Critical patent/JPS5378775A/en
Publication of JPS598061B2 publication Critical patent/JPS598061B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To form MIS . FET having good PN bonding, by growing Si3N4 film on the layer containing same by making Si base plate and N2 react by the direct heat nitrogenous reaction, diffusing therein heavy metal impurity contained in Si base plate and afterwards removing same, sticking newly SiO2 film and forming the element zone.
COPYRIGHT: (C)1978,JPO&Japio
JP15531076A 1976-12-23 1976-12-23 Manufacturing method of semiconductor device Expired JPS598061B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15531076A JPS598061B2 (en) 1976-12-23 1976-12-23 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15531076A JPS598061B2 (en) 1976-12-23 1976-12-23 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5378775A true JPS5378775A (en) 1978-07-12
JPS598061B2 JPS598061B2 (en) 1984-02-22

Family

ID=15603087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15531076A Expired JPS598061B2 (en) 1976-12-23 1976-12-23 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS598061B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177539A (en) * 1988-12-28 1990-07-10 Toshiba Ceramics Co Ltd Silicon wafer with protective film and formation of protective film for silicon wafer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63197974U (en) * 1987-06-03 1988-12-20
JPS6446580A (en) * 1987-08-12 1989-02-21 Mitsubishi Aluminium Heat exchanger

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177539A (en) * 1988-12-28 1990-07-10 Toshiba Ceramics Co Ltd Silicon wafer with protective film and formation of protective film for silicon wafer

Also Published As

Publication number Publication date
JPS598061B2 (en) 1984-02-22

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