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JPS5345981A - Mos semiconductor device and its manufacture - Google Patents

Mos semiconductor device and its manufacture

Info

Publication number
JPS5345981A
JPS5345981A JP12057376A JP12057376A JPS5345981A JP S5345981 A JPS5345981 A JP S5345981A JP 12057376 A JP12057376 A JP 12057376A JP 12057376 A JP12057376 A JP 12057376A JP S5345981 A JPS5345981 A JP S5345981A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
mos semiconductor
generative
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12057376A
Other languages
Japanese (ja)
Inventor
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12057376A priority Critical patent/JPS5345981A/en
Publication of JPS5345981A publication Critical patent/JPS5345981A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:In addition to source and drain layers, a P<+> layer part is provided to some part of the P-type Si substrate beneath the gate to obtain an effective channel, thereby manufacturing short-length channel MOSFET which has excellent generative and controlling performances and stabilized characteristics.
JP12057376A 1976-10-06 1976-10-06 Mos semiconductor device and its manufacture Pending JPS5345981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12057376A JPS5345981A (en) 1976-10-06 1976-10-06 Mos semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12057376A JPS5345981A (en) 1976-10-06 1976-10-06 Mos semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5345981A true JPS5345981A (en) 1978-04-25

Family

ID=14789628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12057376A Pending JPS5345981A (en) 1976-10-06 1976-10-06 Mos semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5345981A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010087A (en) * 1973-05-23 1975-02-01
JPS5027483A (en) * 1973-07-10 1975-03-20

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010087A (en) * 1973-05-23 1975-02-01
JPS5027483A (en) * 1973-07-10 1975-03-20

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