JPS5345981A - Mos semiconductor device and its manufacture - Google Patents
Mos semiconductor device and its manufactureInfo
- Publication number
- JPS5345981A JPS5345981A JP12057376A JP12057376A JPS5345981A JP S5345981 A JPS5345981 A JP S5345981A JP 12057376 A JP12057376 A JP 12057376A JP 12057376 A JP12057376 A JP 12057376A JP S5345981 A JPS5345981 A JP S5345981A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- mos semiconductor
- generative
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:In addition to source and drain layers, a P<+> layer part is provided to some part of the P-type Si substrate beneath the gate to obtain an effective channel, thereby manufacturing short-length channel MOSFET which has excellent generative and controlling performances and stabilized characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12057376A JPS5345981A (en) | 1976-10-06 | 1976-10-06 | Mos semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12057376A JPS5345981A (en) | 1976-10-06 | 1976-10-06 | Mos semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5345981A true JPS5345981A (en) | 1978-04-25 |
Family
ID=14789628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12057376A Pending JPS5345981A (en) | 1976-10-06 | 1976-10-06 | Mos semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5345981A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5010087A (en) * | 1973-05-23 | 1975-02-01 | ||
JPS5027483A (en) * | 1973-07-10 | 1975-03-20 |
-
1976
- 1976-10-06 JP JP12057376A patent/JPS5345981A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5010087A (en) * | 1973-05-23 | 1975-02-01 | ||
JPS5027483A (en) * | 1973-07-10 | 1975-03-20 |
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