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JPS52141580A - Manufacture of mos-type semiconductor device - Google Patents

Manufacture of mos-type semiconductor device

Info

Publication number
JPS52141580A
JPS52141580A JP5862576A JP5862576A JPS52141580A JP S52141580 A JPS52141580 A JP S52141580A JP 5862576 A JP5862576 A JP 5862576A JP 5862576 A JP5862576 A JP 5862576A JP S52141580 A JPS52141580 A JP S52141580A
Authority
JP
Japan
Prior art keywords
mos
manufacture
semiconductor device
type semiconductor
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5862576A
Other languages
Japanese (ja)
Inventor
Takeshi Ishihara
Shigero Kuninobu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5862576A priority Critical patent/JPS52141580A/en
Publication of JPS52141580A publication Critical patent/JPS52141580A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: The substate is covered with P-added poly-Si including the gate oxidized film, and the poly-Si layer is selectively oxidized by way of Si3N4 to form source and drain layers, so that the Si face can be made flat and cutting of Al wiring at the step can be prevented.
COPYRIGHT: (C)1977,JPO&Japio
JP5862576A 1976-05-20 1976-05-20 Manufacture of mos-type semiconductor device Pending JPS52141580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5862576A JPS52141580A (en) 1976-05-20 1976-05-20 Manufacture of mos-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5862576A JPS52141580A (en) 1976-05-20 1976-05-20 Manufacture of mos-type semiconductor device

Publications (1)

Publication Number Publication Date
JPS52141580A true JPS52141580A (en) 1977-11-25

Family

ID=13089750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5862576A Pending JPS52141580A (en) 1976-05-20 1976-05-20 Manufacture of mos-type semiconductor device

Country Status (1)

Country Link
JP (1) JPS52141580A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4984729A (en) * 1972-12-21 1974-08-14
JPS5565472A (en) * 1978-11-13 1980-05-16 Fujitsu Ltd Integrated circuit device
US4653173A (en) * 1985-03-04 1987-03-31 Signetics Corporation Method of manufacturing an insulated gate field effect device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4984729A (en) * 1972-12-21 1974-08-14
JPS569826B2 (en) * 1972-12-21 1981-03-04
JPS5565472A (en) * 1978-11-13 1980-05-16 Fujitsu Ltd Integrated circuit device
US4653173A (en) * 1985-03-04 1987-03-31 Signetics Corporation Method of manufacturing an insulated gate field effect device

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