JPS5344180A - Semiconductor inspecting method - Google Patents
Semiconductor inspecting methodInfo
- Publication number
- JPS5344180A JPS5344180A JP11912376A JP11912376A JPS5344180A JP S5344180 A JPS5344180 A JP S5344180A JP 11912376 A JP11912376 A JP 11912376A JP 11912376 A JP11912376 A JP 11912376A JP S5344180 A JPS5344180 A JP S5344180A
- Authority
- JP
- Japan
- Prior art keywords
- inspecting method
- semiconductor inspecting
- inspection
- semiconductor
- defectives
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: The production of defectives and the decrease in yield owing to defects of electric characteristic inspection are prevented by beforehand applying a voltage of the extent of breaking the oxide film of Al electrodes prior to inspection.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11912376A JPS5344180A (en) | 1976-10-04 | 1976-10-04 | Semiconductor inspecting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11912376A JPS5344180A (en) | 1976-10-04 | 1976-10-04 | Semiconductor inspecting method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5344180A true JPS5344180A (en) | 1978-04-20 |
Family
ID=14753498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11912376A Pending JPS5344180A (en) | 1976-10-04 | 1976-10-04 | Semiconductor inspecting method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5344180A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6268851A (en) * | 1985-09-20 | 1987-03-28 | Asahi Chem Ind Co Ltd | Impact-resistant polyamide composition |
-
1976
- 1976-10-04 JP JP11912376A patent/JPS5344180A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6268851A (en) * | 1985-09-20 | 1987-03-28 | Asahi Chem Ind Co Ltd | Impact-resistant polyamide composition |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5267295A (en) | Driving method of electron optical display body | |
JPS5344180A (en) | Semiconductor inspecting method | |
JPS5247676A (en) | Process for production of semiconductor device | |
JPS5220769A (en) | Longitudinal semi-conductor unit | |
JPS52129279A (en) | Production of semiconductor device | |
JPS526441A (en) | Manufacturing method of parallelelectric field excitation piezo-electr ic filters | |
JPS5422760A (en) | Evaluating method for si crystal | |
JPS51115777A (en) | Manufacturing method of a semiconductor apparatus | |
JPS5397765A (en) | Production of semiconductor device | |
JPS5249781A (en) | Process for production of semiconductor device | |
JPS549575A (en) | Ion injection method | |
JPS5232283A (en) | Manufacturing process of a short emitter type thyristor | |
JPS5338266A (en) | Screening method of semiconductors and device for the same | |
JPS5211765A (en) | Method of manufacturing semiconductor device | |
JPS5228899A (en) | Production method of electric floating motion display unit | |
JPS51151545A (en) | Method for applying an electric charge by powder of magnetic material arranged in brush=state | |
JPS5246772A (en) | Process for production of lead frame for semiconductors | |
JPS52106681A (en) | Etching method | |
JPS5227274A (en) | Semiconductor unit and its manufacturing process | |
JPS5286376A (en) | Method of contact inspection for electric parts or like | |
JPS5223272A (en) | Method of manufacturing glass passivation semiconductor device | |
CA1010157A (en) | Oxide isolated integrated circuit structure and method for fabricating | |
JPS5318958A (en) | Production of semiconductor device | |
JPS51137382A (en) | Measuring method for junction point within semi conductor wafer | |
JPS53148963A (en) | Deciding method for interface charge density between semiconductor substrate and insulator |