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JPS5338279A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5338279A
JPS5338279A JP11353976A JP11353976A JPS5338279A JP S5338279 A JPS5338279 A JP S5338279A JP 11353976 A JP11353976 A JP 11353976A JP 11353976 A JP11353976 A JP 11353976A JP S5338279 A JPS5338279 A JP S5338279A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
metal
electron beam
resin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11353976A
Other languages
Japanese (ja)
Other versions
JPS5814742B2 (en
Inventor
Kazufumi Ogawa
Tadanaka Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11353976A priority Critical patent/JPS5814742B2/en
Publication of JPS5338279A publication Critical patent/JPS5338279A/en
Publication of JPS5814742B2 publication Critical patent/JPS5814742B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent damaging of semiconductor devices owing to the X-rays generated when an electron beam evaporation method is used, by using a photosensitive resin film mixed with a metal or metal compound.
COPYRIGHT: (C)1978,JPO&Japio
JP11353976A 1976-09-20 1976-09-20 Manufacturing method of semiconductor device Expired JPS5814742B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11353976A JPS5814742B2 (en) 1976-09-20 1976-09-20 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11353976A JPS5814742B2 (en) 1976-09-20 1976-09-20 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5338279A true JPS5338279A (en) 1978-04-08
JPS5814742B2 JPS5814742B2 (en) 1983-03-22

Family

ID=14614874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11353976A Expired JPS5814742B2 (en) 1976-09-20 1976-09-20 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5814742B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0350755Y2 (en) * 1985-12-23 1991-10-30

Also Published As

Publication number Publication date
JPS5814742B2 (en) 1983-03-22

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