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JPS5336181A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5336181A
JPS5336181A JP11058276A JP11058276A JPS5336181A JP S5336181 A JPS5336181 A JP S5336181A JP 11058276 A JP11058276 A JP 11058276A JP 11058276 A JP11058276 A JP 11058276A JP S5336181 A JPS5336181 A JP S5336181A
Authority
JP
Japan
Prior art keywords
substrate
production
semiconductor device
mesa grooves
scribing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11058276A
Other languages
Japanese (ja)
Inventor
Kiyohiko Mihara
Toshiyuki Fujii
Shigeru Kitabi
Yoshio Ishibashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11058276A priority Critical patent/JPS5336181A/en
Priority to DE2730130A priority patent/DE2730130C2/en
Priority to US05/813,347 priority patent/US4217689A/en
Publication of JPS5336181A publication Critical patent/JPS5336181A/en
Pending legal-status Critical Current

Links

Landscapes

  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Dicing (AREA)

Abstract

PURPOSE: To reduce the production of cracks and increase dicing yield by forming insulation films of thermal expansion differing from that of a substrate in the mesa grooves provided opposedly on the front and back of the semiconductor substrate, scribing the substrate down to a depth of more than 1/3 the thickness of the substrate from one of the mesa grooves with a tapered diamond blade, then cracking the substrate to pellets by flexing.
COPYRIGHT: (C)1978,JPO&Japio
JP11058276A 1976-09-14 1976-09-14 Production of semiconductor device Pending JPS5336181A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11058276A JPS5336181A (en) 1976-09-14 1976-09-14 Production of semiconductor device
DE2730130A DE2730130C2 (en) 1976-09-14 1977-07-04 Method for manufacturing semiconductor components
US05/813,347 US4217689A (en) 1976-09-14 1977-07-06 Process for preparing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11058276A JPS5336181A (en) 1976-09-14 1976-09-14 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5336181A true JPS5336181A (en) 1978-04-04

Family

ID=14539484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11058276A Pending JPS5336181A (en) 1976-09-14 1976-09-14 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5336181A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5004521A (en) * 1988-11-21 1991-04-02 Yamaha Corporation Method of making a lead frame by embossing, grinding and etching
JP2008526036A (en) * 2004-12-29 2008-07-17 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Method of manufacturing a semiconductor chip from a wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5004521A (en) * 1988-11-21 1991-04-02 Yamaha Corporation Method of making a lead frame by embossing, grinding and etching
JP2008526036A (en) * 2004-12-29 2008-07-17 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Method of manufacturing a semiconductor chip from a wafer
JP4814252B2 (en) * 2004-12-29 2011-11-16 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Method of manufacturing a semiconductor chip from a wafer

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