[go: up one dir, main page]

JPS5324281A - Production of insulated gate type field effect transistors - Google Patents

Production of insulated gate type field effect transistors

Info

Publication number
JPS5324281A
JPS5324281A JP9902976A JP9902976A JPS5324281A JP S5324281 A JPS5324281 A JP S5324281A JP 9902976 A JP9902976 A JP 9902976A JP 9902976 A JP9902976 A JP 9902976A JP S5324281 A JPS5324281 A JP S5324281A
Authority
JP
Japan
Prior art keywords
production
field effect
type field
effect transistors
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9902976A
Other languages
Japanese (ja)
Other versions
JPS6159539B2 (en
Inventor
Koji Otsu
Hidenobu Mochizuki
Takashi Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9902976A priority Critical patent/JPS5324281A/en
Publication of JPS5324281A publication Critical patent/JPS5324281A/en
Publication of JPS6159539B2 publication Critical patent/JPS6159539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make C type FETs with good accuracy by diffusion-forming sources and drains through the use of a diffusion mask of the composition of-SiO2, Bdoped poly-Si, Si3N4, SiO2 and using B-doped poly-Si as an electrode.
JP9902976A 1976-08-19 1976-08-19 Production of insulated gate type field effect transistors Granted JPS5324281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9902976A JPS5324281A (en) 1976-08-19 1976-08-19 Production of insulated gate type field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9902976A JPS5324281A (en) 1976-08-19 1976-08-19 Production of insulated gate type field effect transistors

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61036964A Division JPS61190975A (en) 1986-02-21 1986-02-21 Manufacture of insulated gate type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5324281A true JPS5324281A (en) 1978-03-06
JPS6159539B2 JPS6159539B2 (en) 1986-12-17

Family

ID=14235885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9902976A Granted JPS5324281A (en) 1976-08-19 1976-08-19 Production of insulated gate type field effect transistors

Country Status (1)

Country Link
JP (1) JPS5324281A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57501706A (en) * 1980-10-20 1982-09-16
JPS61190975A (en) * 1986-02-21 1986-08-25 Sony Corp Manufacture of insulated gate type field-effect transistor
JPS6373668A (en) * 1986-09-17 1988-04-04 Nec Yamagata Ltd Manufacture of integrated circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868177A (en) * 1972-01-27 1973-09-17
JPS4952984A (en) * 1972-09-25 1974-05-23
JPS5169372A (en) * 1974-11-06 1976-06-15 Ibm

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868177A (en) * 1972-01-27 1973-09-17
JPS4952984A (en) * 1972-09-25 1974-05-23
JPS5169372A (en) * 1974-11-06 1976-06-15 Ibm

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57501706A (en) * 1980-10-20 1982-09-16
JPS61190975A (en) * 1986-02-21 1986-08-25 Sony Corp Manufacture of insulated gate type field-effect transistor
JPS6373668A (en) * 1986-09-17 1988-04-04 Nec Yamagata Ltd Manufacture of integrated circuit

Also Published As

Publication number Publication date
JPS6159539B2 (en) 1986-12-17

Similar Documents

Publication Publication Date Title
JPS51132779A (en) Production method of vertical-junction type field-effect transistor
JPS51114074A (en) Insulation gate type field effect transistor
JPS5365078A (en) Production of junction type field effect transistor
JPS5362985A (en) Mis type field effect transistor and its production
JPS5324281A (en) Production of insulated gate type field effect transistors
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS53143177A (en) Production of field effect transistor
JPS5426646A (en) Current miller circuit
JPS5263074A (en) Insulated gate type field effect transistor and its production
JPS5388581A (en) Complementary type field effect transistor
JPS5364481A (en) Production of schottky type field effect transistor
JPS5299059A (en) Switching device
JPS5378177A (en) Field effect transistor
JPS53147473A (en) Production of mis type semiconductor device
JPS53122374A (en) Manufacture for double gate consitution semiconductor device
JPS527658A (en) Biasing system for field effect power transistors
JPS538077A (en) Field effect transistor and its production
JPS5282078A (en) Production of mos transistor
JPS5272185A (en) Two-gate type field effect transistor
JPS548950A (en) Mos differential amplifier of enhancement type
JPS5432259A (en) Complementary pair circuit of transistor
JPS5280784A (en) Insulated gate fype field-effect transistor
JPS53120281A (en) Insulated gate field effect transistor
JPS52113145A (en) High inverse voltage push pull circuit
JPS52124876A (en) Insulated gate type field effect semiconductor