JPS5324280A - Production of semiconductor integrated circuit - Google Patents
Production of semiconductor integrated circuitInfo
- Publication number
- JPS5324280A JPS5324280A JP9902876A JP9902876A JPS5324280A JP S5324280 A JPS5324280 A JP S5324280A JP 9902876 A JP9902876 A JP 9902876A JP 9902876 A JP9902876 A JP 9902876A JP S5324280 A JPS5324280 A JP S5324280A
- Authority
- JP
- Japan
- Prior art keywords
- production
- integrated circuit
- semiconductor integrated
- mask
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Weting (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To make an IC of IG type MOSFETs by making insulation layers having thick and thin parts with the same mask, and opening holes through the use of the difference in film thickness thereby forming the diffusion mask.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9902876A JPS5324280A (en) | 1976-08-19 | 1976-08-19 | Production of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9902876A JPS5324280A (en) | 1976-08-19 | 1976-08-19 | Production of semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5324280A true JPS5324280A (en) | 1978-03-06 |
Family
ID=14235844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9902876A Pending JPS5324280A (en) | 1976-08-19 | 1976-08-19 | Production of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5324280A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57192066A (en) * | 1981-05-21 | 1982-11-26 | Nec Corp | Manufacture of semiconductor device |
JPS59129892A (en) * | 1983-01-17 | 1984-07-26 | 日本電信電話株式会社 | Multifunctional display unit |
US5523246A (en) * | 1995-06-14 | 1996-06-04 | United Microelectronics Corporation | Method of fabricating a high-voltage metal-gate CMOS device |
-
1976
- 1976-08-19 JP JP9902876A patent/JPS5324280A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57192066A (en) * | 1981-05-21 | 1982-11-26 | Nec Corp | Manufacture of semiconductor device |
JPS6362903B2 (en) * | 1981-05-21 | 1988-12-05 | ||
JPS59129892A (en) * | 1983-01-17 | 1984-07-26 | 日本電信電話株式会社 | Multifunctional display unit |
US5523246A (en) * | 1995-06-14 | 1996-06-04 | United Microelectronics Corporation | Method of fabricating a high-voltage metal-gate CMOS device |
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