JPS52150981A - Electrode forming method in semiconductor elements - Google Patents
Electrode forming method in semiconductor elementsInfo
- Publication number
- JPS52150981A JPS52150981A JP6767076A JP6767076A JPS52150981A JP S52150981 A JPS52150981 A JP S52150981A JP 6767076 A JP6767076 A JP 6767076A JP 6767076 A JP6767076 A JP 6767076A JP S52150981 A JPS52150981 A JP S52150981A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor elements
- forming method
- electrode forming
- voltage
- dielectric strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Wire Bonding (AREA)
Abstract
PURPOSE: To smoothly perform the formation of an Ag electrode of double heat sink diodes through electroplating by applying the a.c. voltage having an amplitude larger than the specified dielectric strength of semiconductor elements to a PN junction first, then changing over the applied voltage to forward d.c. voltage below the specified dielectric strength thereby performing plating.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6767076A JPS52150981A (en) | 1976-06-11 | 1976-06-11 | Electrode forming method in semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6767076A JPS52150981A (en) | 1976-06-11 | 1976-06-11 | Electrode forming method in semiconductor elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS52150981A true JPS52150981A (en) | 1977-12-15 |
Family
ID=13351654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6767076A Pending JPS52150981A (en) | 1976-06-11 | 1976-06-11 | Electrode forming method in semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52150981A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6352490A (en) * | 1986-08-22 | 1988-03-05 | Toshiba Corp | Glass-sealed light-emitting semiconductor device |
| US6567060B1 (en) | 1997-10-16 | 2003-05-20 | Citizen Watch Co., Ltd. | Liquid display |
| JP2007048924A (en) * | 2005-08-10 | 2007-02-22 | Renesas Technology Corp | Semiconductor device manufacturing method |
| JP2008535222A (en) * | 2005-03-25 | 2008-08-28 | ヴィシャイ ジェネラル セミコンダクター エルエルシー | Process for forming a planar diode using one mask |
-
1976
- 1976-06-11 JP JP6767076A patent/JPS52150981A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6352490A (en) * | 1986-08-22 | 1988-03-05 | Toshiba Corp | Glass-sealed light-emitting semiconductor device |
| US6567060B1 (en) | 1997-10-16 | 2003-05-20 | Citizen Watch Co., Ltd. | Liquid display |
| JP2008535222A (en) * | 2005-03-25 | 2008-08-28 | ヴィシャイ ジェネラル セミコンダクター エルエルシー | Process for forming a planar diode using one mask |
| US8525222B2 (en) | 2005-03-25 | 2013-09-03 | Vishay General Semiconductor Llc | Process for forming a planar diode using one mask |
| US8975719B2 (en) | 2005-03-25 | 2015-03-10 | Vishay General Semiconductor Llc | Process for forming a planar diode using one mask |
| US9537017B2 (en) | 2005-03-25 | 2017-01-03 | Vishay General Semiconductor Llc | Process for forming a planar diode using one mask |
| JP2007048924A (en) * | 2005-08-10 | 2007-02-22 | Renesas Technology Corp | Semiconductor device manufacturing method |
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