JPS5141550B2 - - Google Patents
Info
- Publication number
- JPS5141550B2 JPS5141550B2 JP47084700A JP8470072A JPS5141550B2 JP S5141550 B2 JPS5141550 B2 JP S5141550B2 JP 47084700 A JP47084700 A JP 47084700A JP 8470072 A JP8470072 A JP 8470072A JP S5141550 B2 JPS5141550 B2 JP S5141550B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17784071A | 1971-09-03 | 1971-09-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4834675A JPS4834675A (ja) | 1973-05-21 |
JPS5141550B2 true JPS5141550B2 (ja) | 1976-11-10 |
Family
ID=22650170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47084700A Expired JPS5141550B2 (ja) | 1971-09-03 | 1972-08-25 |
Country Status (12)
Country | Link |
---|---|
US (1) | US3715249A (ja) |
JP (1) | JPS5141550B2 (ja) |
KR (1) | KR780000506B1 (ja) |
BE (1) | BE788159A (ja) |
CA (1) | CA958313A (ja) |
DE (1) | DE2241870C3 (ja) |
FR (1) | FR2151104B1 (ja) |
GB (1) | GB1392758A (ja) |
HK (1) | HK35876A (ja) |
IT (1) | IT962297B (ja) |
NL (1) | NL154059B (ja) |
SE (1) | SE375118B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2425684A1 (de) * | 1974-05-28 | 1975-12-11 | Ibm Deutschland | Verfahren zum aetzen von silicium enthaltenden materialien |
US4116714A (en) * | 1977-08-15 | 1978-09-26 | International Business Machines Corporation | Post-polishing semiconductor surface cleaning process |
US5215930A (en) * | 1991-10-23 | 1993-06-01 | At&T Bell Laboratories | Integrated circuit etching of silicon nitride and polysilicon using phosphoric acid |
KR970008354B1 (ko) * | 1994-01-12 | 1997-05-23 | 엘지반도체 주식회사 | 선택적 식각방법 |
US5607543A (en) * | 1995-04-28 | 1997-03-04 | Lucent Technologies Inc. | Integrated circuit etching |
US5885903A (en) * | 1997-01-22 | 1999-03-23 | Micron Technology, Inc. | Process for selectively etching silicon nitride in the presence of silicon oxide |
JP2007517413A (ja) * | 2003-12-30 | 2007-06-28 | アクリオン・エルエルシー | 基板処理中の窒化ケイ素の選択エッチングのための装置及び方法 |
JP3882932B2 (ja) | 2004-04-08 | 2007-02-21 | 信越化学工業株式会社 | ジルコニウム含有酸化物 |
JP4799332B2 (ja) * | 2006-09-12 | 2011-10-26 | 株式会社東芝 | エッチング液、エッチング方法および電子部品の製造方法 |
TWI629720B (zh) | 2015-09-30 | 2018-07-11 | 東京威力科創股份有限公司 | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
-
1971
- 1971-09-03 US US00177840A patent/US3715249A/en not_active Expired - Lifetime
-
1972
- 1972-03-23 CA CA137,932A patent/CA958313A/en not_active Expired
- 1972-08-21 SE SE7210841A patent/SE375118B/xx unknown
- 1972-08-25 JP JP47084700A patent/JPS5141550B2/ja not_active Expired
- 1972-08-25 DE DE2241870A patent/DE2241870C3/de not_active Expired
- 1972-08-25 NL NL727211625A patent/NL154059B/xx not_active IP Right Cessation
- 1972-08-29 KR KR7201303A patent/KR780000506B1/ko active
- 1972-08-30 BE BE788159A patent/BE788159A/xx unknown
- 1972-08-30 IT IT52451/72A patent/IT962297B/it active
- 1972-08-31 GB GB4037972A patent/GB1392758A/en not_active Expired
- 1972-09-01 FR FR7231175A patent/FR2151104B1/fr not_active Expired
-
1976
- 1976-06-10 HK HK358/76*UA patent/HK35876A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
CA958313A (en) | 1974-11-26 |
NL7211625A (ja) | 1973-03-06 |
FR2151104B1 (ja) | 1974-08-19 |
KR780000506B1 (en) | 1978-10-25 |
US3715249A (en) | 1973-02-06 |
HK35876A (en) | 1976-06-18 |
NL154059B (nl) | 1977-07-15 |
DE2241870B2 (de) | 1976-03-11 |
BE788159A (fr) | 1972-12-18 |
JPS4834675A (ja) | 1973-05-21 |
GB1392758A (en) | 1975-04-30 |
IT962297B (it) | 1973-12-20 |
SE375118B (ja) | 1975-04-07 |
DE2241870C3 (de) | 1978-04-20 |
FR2151104A1 (ja) | 1973-04-13 |
DE2241870A1 (de) | 1973-03-22 |