JPS51145276A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS51145276A JPS51145276A JP50070552A JP7055275A JPS51145276A JP S51145276 A JPS51145276 A JP S51145276A JP 50070552 A JP50070552 A JP 50070552A JP 7055275 A JP7055275 A JP 7055275A JP S51145276 A JPS51145276 A JP S51145276A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- simplicity
- plane
- high integrated
- integrated density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To perform semiconductor device in multi-story instead of in plane as usual leads to high integrated density and simplicity of process.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50070552A JPS51145276A (en) | 1975-06-10 | 1975-06-10 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50070552A JPS51145276A (en) | 1975-06-10 | 1975-06-10 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51145276A true JPS51145276A (en) | 1976-12-14 |
Family
ID=13434790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50070552A Pending JPS51145276A (en) | 1975-06-10 | 1975-06-10 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51145276A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54116884A (en) * | 1978-03-03 | 1979-09-11 | Fujitsu Ltd | Semiconductor device |
| EP0055412A3 (en) * | 1980-12-29 | 1982-08-25 | Rockwell International Corporation | Lateral npn transistor and method |
| JPS57157568A (en) * | 1981-03-02 | 1982-09-29 | Rockwell International Corp | N-p-n lateral transistor |
| JPS57157569A (en) * | 1981-03-02 | 1982-09-29 | Rockwell International Corp | N-p-n lateral transistor array of submicron size and method of forming same |
| JPS57170546A (en) * | 1981-03-30 | 1982-10-20 | Ibm | Semiconductor element |
| EP0068070A1 (en) * | 1981-07-01 | 1983-01-05 | Rockwell International Corporation | Complementary NPN and PNP lateral transistors separated from substrate by slots filled with substrate oxide for minimal interference therefrom and method for producing same |
| JPS584945A (en) * | 1981-06-25 | 1983-01-12 | ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン | Constant voltage circuit manufacturing method and device |
| JPS5810866A (en) * | 1981-07-01 | 1983-01-21 | ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン | Pnp lateral transistor and method of producing same |
| JPS5810865A (en) * | 1981-07-01 | 1983-01-21 | ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン | Lateral PNP transistor and its manufacturing method |
| JPS5818938A (en) * | 1981-07-27 | 1983-02-03 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Integrated circuit structure |
| JPS5827342A (en) * | 1981-07-27 | 1983-02-18 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Method of forming dielectric isolation region |
-
1975
- 1975-06-10 JP JP50070552A patent/JPS51145276A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54116884A (en) * | 1978-03-03 | 1979-09-11 | Fujitsu Ltd | Semiconductor device |
| EP0055412A3 (en) * | 1980-12-29 | 1982-08-25 | Rockwell International Corporation | Lateral npn transistor and method |
| JPS57157568A (en) * | 1981-03-02 | 1982-09-29 | Rockwell International Corp | N-p-n lateral transistor |
| JPS57157569A (en) * | 1981-03-02 | 1982-09-29 | Rockwell International Corp | N-p-n lateral transistor array of submicron size and method of forming same |
| JPS57170546A (en) * | 1981-03-30 | 1982-10-20 | Ibm | Semiconductor element |
| JPS584945A (en) * | 1981-06-25 | 1983-01-12 | ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン | Constant voltage circuit manufacturing method and device |
| EP0068070A1 (en) * | 1981-07-01 | 1983-01-05 | Rockwell International Corporation | Complementary NPN and PNP lateral transistors separated from substrate by slots filled with substrate oxide for minimal interference therefrom and method for producing same |
| JPS5810866A (en) * | 1981-07-01 | 1983-01-21 | ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン | Pnp lateral transistor and method of producing same |
| JPS5810865A (en) * | 1981-07-01 | 1983-01-21 | ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン | Lateral PNP transistor and its manufacturing method |
| JPS5818938A (en) * | 1981-07-27 | 1983-02-03 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Integrated circuit structure |
| JPS5827342A (en) * | 1981-07-27 | 1983-02-18 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Method of forming dielectric isolation region |
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