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JPH1197146A - Solder bump connection method - Google Patents

Solder bump connection method

Info

Publication number
JPH1197146A
JPH1197146A JP25498897A JP25498897A JPH1197146A JP H1197146 A JPH1197146 A JP H1197146A JP 25498897 A JP25498897 A JP 25498897A JP 25498897 A JP25498897 A JP 25498897A JP H1197146 A JPH1197146 A JP H1197146A
Authority
JP
Japan
Prior art keywords
electrode
solder
substrate
alignment
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25498897A
Other languages
Japanese (ja)
Inventor
Hideki Tsunetsugu
秀起 恒次
Masakaze Hosoya
正風 細矢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP25498897A priority Critical patent/JPH1197146A/en
Publication of JPH1197146A publication Critical patent/JPH1197146A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Landscapes

  • Manufacturing Of Electrical Connectors (AREA)

Abstract

PROBLEM TO BE SOLVED: To ensure a highly accurate bump connection by forming a solder layer on a metal film for alignment with a good solder wettability which is formed with the center deviated and with the size larger than a substrate- electrode, whose center position and shape are almost the same as those of the metal film, on the substrate-electrode, positioning the solder layer in a face-to-face relation with another substrate-electrode, performing pressing for tentative fixing and allowing the solder layer to flow freely. SOLUTION: On a substrate-electrode 12 for alignment on a substrate 1 having a light guide path 2 formed, a solder bump 15 formed on a substrate- electrode 8 of LD4 is positioned, and after tentative fixing under pressure the solder layer is subjected to free flow. Since the electrode 12 has no wettability with the part except the substrate-electrode 8, all thereof is melted into the solder bump 15. Simultaneously, according to the self alignment, that is, the movement of the solder bump 15 onto the substrate-electrode 12, the LD4 moves so that positioning is made automatically, and for example, an active layer of the LD4 and a core 3 of the path 2 are positioned adjacently in a gapless manner substantially, thereby allowing easy mounting. At the time of positioning both electrodes, the margin of alignment is made large.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、高精度にしかも損
傷の懸念の少ないはんだバンプの接続方法に関するもの
であり、更に特別には、超高速光伝送用モジュール或い
は光インタコネクションモジュール等の光デバイスを基
板に搭載する場合の電極の接続方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for connecting solder bumps with high precision and with less concern for damage, and more particularly, to an optical device such as an ultra-high-speed optical transmission module or an optical interconnection module. And a method of connecting electrodes when mounting on a substrate.

【0002】従来、光デバイスをバンプ接続により実装
する場合は図1に示すような方法を用いていた。図1
は、シリコン基板1上に形成した光導波路2のコア部3
とLD4の活性層5との光結合を行う場合の例を示すも
のであり、はんだバンプ6でシリコン基板1上の下地電
極7とLD上の下地電極8とを接続するものである。バ
ンプ接続の方法としては、予めLD側又は基板側にはん
だ層を形成し、互いの下地電極がほぼ重なる位置でLD
を加圧仮止めした後、はんだをリフローしてバンプ接続
を行う方法が一般的である。
Conventionally, when mounting an optical device by bump connection, a method as shown in FIG. 1 has been used. FIG.
Is the core 3 of the optical waveguide 2 formed on the silicon substrate 1
This is an example in which optical coupling is performed between the substrate and the active layer 5 of the LD 4, in which a base electrode 7 on the silicon substrate 1 and a base electrode 8 on the LD are connected by a solder bump 6. As a method of bump connection, a solder layer is previously formed on the LD side or the substrate side, and the LD is formed at a position where the underlying electrodes substantially overlap each other.
In general, a bump is connected by temporarily reflowing the solder after pressure-fixing.

【0003】この時の下地電極の構成例を図2に示す。
シリコン基板1上にはんだバンプより小さい円形状の下
地電極としてTi 層9、Pt 層10及びAu 層11の膜が順
次形成される。このように同じ円形状のパターンに形成
された下地電極上にバンプ接続された様子を図3に示
す。下地電極の表面のAu 層11はリフローを行った時に
はんだバンプに溶融され、Pt 層10を介してバンプ接続
される。
FIG. 2 shows an example of the configuration of the base electrode at this time.
On the silicon substrate 1, films of a Ti layer 9, a Pt layer 10 and an Au layer 11 are sequentially formed as circular base electrodes smaller than the solder bumps. FIG. 3 shows a state in which bumps are connected to the base electrodes formed in the same circular pattern in this manner. The Au layer 11 on the surface of the base electrode is melted into a solder bump when reflow is performed, and is connected to the bump via the Pt layer 10.

【0004】このような従来の方法では、同じ円形状の
膜を重ねた下地電極を形成しているため、バンプ接続を
行う際、LD側の下地電極と基板側の下地電極とを高い
精度で位置合わせした後、はんだをリフローしバンプ接
続を行うことになる。また、光導波路2のコア部3とL
D4の活性層5との光結合効率を上げるためには、両者
を近接させてバンプ接続を行うことが必須である。この
ため従来の方法では、位置合わせの工程において、LD
の活性層5と光導波路のコア部3とが接触し破損するこ
とがあった。
In such a conventional method, a base electrode is formed by laminating the same circular film, so that when the bump connection is made, the base electrode on the LD side and the base electrode on the substrate side can be precisely formed. After the alignment, the solder is reflowed to perform bump connection. Also, the core portion 3 of the optical waveguide 2 and L
In order to increase the optical coupling efficiency of D4 with the active layer 5, it is essential that both are brought close to each other to perform bump connection. For this reason, in the conventional method, in the alignment step, LD
In some cases, the active layer 5 and the core portion 3 of the optical waveguide come into contact with each other and break.

【0005】[0005]

【発明が解決しようとする課題】本発明の目的は、バン
プ接続を行う際、両電極の位置合わせを行う時のアライ
メントマージンを大きし、しかもバンプ接続完了の時に
は高精度の実装とすることができるはんだバンプの接続
方法を提供することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to increase the alignment margin when aligning both electrodes when performing bump connection, and to achieve high-precision mounting when bump connection is completed. An object of the present invention is to provide a solder bump connection method that can be used.

【0006】[0006]

【課題を解決するための手段】本発明のはんだバンプの
接続方法は、上記の目的を達成するため、二つの面上に
それぞれ形成された下地電極をはんだバンプを用いて相
互に接続するに際し、中心位置及び形状がほぼ等しい下
地電極をそれぞれ形成する工程、いずれか一方の下地電
極上に、該下地電極より大きく且つ該下地電極と中心を
ずらした形状を有するパターンを持ち、はんだとの濡れ
性にすぐれた整合用金属膜を形成する工程、いずれか一
方の下地電極又は整合用金属膜の上にはんだ層を形成す
る工程、及び、該はんだ層を他方の整合用金属膜又は下
地電極に対向して位置合わせし、加圧して仮止めし、更
にはんだをリフローする工程を含むことを特徴とする。
In order to achieve the above object, a method of connecting solder bumps according to the present invention, when connecting base electrodes formed on two surfaces to each other using solder bumps, is described. A step of forming a base electrode having substantially the same center position and shape, and having a pattern having a shape larger than the base electrode and offset from the base electrode on one of the base electrodes, and having wettability with solder; Forming an excellent matching metal film, forming a solder layer on one of the base electrodes or the matching metal film, and facing the solder layer to the other matching metal film or the base electrode. And a step of temporarily fixing by pressurizing and further reflowing the solder.

【0007】このような本発明の方法によれば、基板上
の下地電極以外の領域ではんだバンプの位置合わせ及び
加圧による仮止めを行った後ではんだをリフローする
が、前記の整合用金属膜は下地電極以外の部分との濡れ
性がないので、この工程で整合用金属膜は全てはんだバ
ンプに溶融し、それと同時にいわゆる自己整合作用、即
ち溶融はんだバンプが下地電極上に移動しようとするた
めこれと共にチップが移動して自動的に位置合わせが行
われ、例えばLDの活性層と光導波路のコア部とを殆ど
隙間なく近接した構成で実装することができる。
According to the method of the present invention, the solder is reflowed after the solder bumps are positioned and temporarily fixed by pressing in a region other than the base electrode on the substrate. Since the film has no wettability with parts other than the base electrode, in this step, the matching metal film is completely melted into the solder bumps, and at the same time, the so-called self-alignment action, that is, the molten solder bumps tend to move onto the base electrode. Therefore, the chip is moved and the alignment is performed automatically, so that, for example, the active layer of the LD and the core portion of the optical waveguide can be mounted in a close proximity with almost no gap.

【0008】[0008]

【発明の実施の形態】次に図面を用いて本発明の実施例
を説明する。先ず、図5を用いて本発明による下地電極
の形成方法の実施例を説明する。例えばシリコン基板の
ような基板1の上に液状のレジスト13(例えばヘキスト
社のAZ系レジスト)を用いてパターンを形成し (同図
(a))、真空蒸着法等により下地電極用のTi 膜9、Pt
膜10及びAu 膜11を順次積層し (同図(b))、その後、リ
フトオフ技術により、レジストと共に下地電極部分以外
の部分の金属膜層を除去し (同図(c))、再び、液状のレ
ジスト13'(例えばヘキスト社のAZ系レジスト)を用い
てパターンを形成し、真空蒸着法等により整合用金属膜
としてAu 膜を形成し (同図(d))、その後、リフトオフ
技術により、レジストと共に整合用金属膜部分以外の部
分のAu 膜層14を除去し、整合用下地電極12を形成する
( 同図(e))。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings. First, an embodiment of a method for forming a base electrode according to the present invention will be described with reference to FIG. For example, a pattern is formed on a substrate 1 such as a silicon substrate using a liquid resist 13 (for example, an AZ-based resist manufactured by Hoechst).
(a)), a Ti film 9 for a base electrode, Pt
The film 10 and the Au film 11 are sequentially laminated (FIG. 2 (b)). Thereafter, the metal film layer other than the base electrode portion is removed together with the resist by a lift-off technique (FIG. 2 (c)). A pattern is formed using a resist 13 '(for example, AZ-based resist from Hoechst), and an Au film is formed as a matching metal film by a vacuum evaporation method or the like (FIG. (D)). The Au film layer 14 other than the matching metal film portion is removed together with the resist to form the matching underlying electrode 12.
(Figure (e)).

【0009】次に、図6を用いて本発明によりLDの下
地電極上にはんだバンプを形成する工程の実施例を説明
する。LD4の上の下地電極8の上に、液状のレジスト
13"(例えばヘキスト社のAZ系レジスト)を用いてパタ
ーンを形成し (同図(a))、真空蒸着法等によりバンプ用
はんだ層を形成し (同図(b))、その後、リフトオフ技術
により、レジスト13" と共にバンプ部分以外の部分のは
んだ層16を除去し、はんだバンプ15を形成する (同図
(c))。
Next, an embodiment of a process of forming a solder bump on a base electrode of an LD according to the present invention will be described with reference to FIG. A liquid resist is formed on the underlying electrode 8 on the LD 4.
A pattern is formed using 13 "(for example, AZ-based resist from Hoechst) (Fig. (A)), and a solder layer for bumps is formed by a vacuum deposition method or the like (Fig. (B)). By removing the solder layer 16 except for the bump portion together with the resist 13 ″, a solder bump 15 is formed (see FIG.
(c)).

【0010】次に、図7を用いて本発明によりバンプを
接続する工程の実施例を説明する。光導波路2を形成し
たシリコン基板1上に、図5で説明された工程を経て形
成された下地電極(Ti 膜9、Pt 膜10、Au 膜11及び
整合用下地電極12)の整合用下地電極12の上に、図6で
説明された工程を経て形成されたバンプ用はんだ15を位
置合わせし、且つ加圧によって仮止めし (同図(a))、そ
の後、水素等の還元性雰囲気又はフラックス等を用いて
加熱してリフローし、所定の電極位置に自己整合させる
(同図(b))。
Next, an embodiment of a step of connecting bumps according to the present invention will be described with reference to FIG. The matching base electrode of the base electrodes (Ti film 9, Pt film 10, Au film 11, and matching base electrode 12) formed on the silicon substrate 1 on which the optical waveguide 2 is formed through the process described with reference to FIG. On top of 12, the bump solder 15 formed through the process described in FIG. 6 is aligned and temporarily fixed by pressing (FIG. 6A), and then a reducing atmosphere such as hydrogen or the like. Reflow by heating using flux etc. and self-aligning to the predetermined electrode position
(Figure (b)).

【0011】なお、上記の実施例の説明においては、下
地電極としてTi /Pt /Au 膜を用い、整合用下地電
極としてAu 膜を用いたが、基板との接着性及びはんだ
との濡れ性を考慮して金属膜構成を選定すればよく、上
記の実施例の電極材料に限定されるものではない。ま
た、上記実施例では、LDの下地電極にはんだ層を形成
する場合について説明したが、基板側の整合用下地電極
上に形成しても同様の効果が得られることは明らかであ
る。また、上記の実施例では、シリコン基板上に光導波
路を形成した例について説明したが、例えばシリコン基
板に光ファイバを埋め込む構成、電気光素子或いは光導
波路を組み込んだデバイス等、他の構成にも適用できる
ことは明らかである。更に、上記の実施例では光デバイ
スを用いる実施例について説明したが、デバイスの種類
が限定されることはなく、他のデバイス、例えばIC等
にも適用できることは明らかである。
In the above description of the embodiment, the Ti / Pt / Au film is used as the base electrode and the Au film is used as the matching base electrode. However, the adhesion to the substrate and the wettability with the solder are improved. The configuration of the metal film may be selected in consideration of the above, and is not limited to the electrode material of the above-described embodiment. In the above embodiment, the case where the solder layer is formed on the base electrode of the LD has been described. However, it is obvious that the same effect can be obtained by forming the solder layer on the matching base electrode on the substrate side. Further, in the above embodiment, the example in which the optical waveguide is formed on the silicon substrate is described. However, other configurations such as a configuration in which an optical fiber is embedded in a silicon substrate, a device in which an electro-optical element or an optical waveguide is incorporated, and the like are also applicable. Clearly applicable. Furthermore, in the above embodiment, an embodiment using an optical device has been described. However, the type of device is not limited, and it is apparent that the present invention can be applied to other devices such as an IC.

【0012】[0012]

【発明の効果】以上説明したように、本発明の方法によ
れば、整合用金属膜がはんだに溶融することにより、自
己整合作用によって位置合わせされるので、LDの活性
層と光導波路のコアとを結合する場合においても、殆ど
隙間なく近接した構成で容易に実装することができる。
As described above, according to the method of the present invention, since the alignment metal film is melted into the solder and is aligned by the self-alignment action, the active layer of the LD and the core of the optical waveguide are aligned. Also, in the case of combining the two, it can be easily mounted with a close configuration with almost no gap.

【図面の簡単な説明】[Brief description of the drawings]

【図1】従来のはんだバンプの接続方法を説明するため
の図である。
FIG. 1 is a view for explaining a conventional method of connecting solder bumps.

【図2】従来の下地電極の構成を示す図である。FIG. 2 is a diagram showing a configuration of a conventional base electrode.

【図3】従来のバンプ接続部の構成を示す図である。FIG. 3 is a diagram illustrating a configuration of a conventional bump connection unit.

【図4】本発明のはんだバンプの接続方法における下地
電極の構成を示す図である。
FIG. 4 is a view showing a configuration of a base electrode in the method of connecting solder bumps according to the present invention.

【図5】本発明のはんだバンプの接続方法における下地
電極の形成工程を説明する図である。
FIG. 5 is a diagram illustrating a step of forming a base electrode in the method of connecting solder bumps according to the present invention.

【図6】本発明のはんだバンプの接続方法におけるはん
だバンプの形成工程を説明する図である。
FIG. 6 is a diagram illustrating a solder bump forming step in the solder bump connection method of the present invention.

【図7】本発明によるはんだバンプの接続工程を説明す
る図である。
FIG. 7 is a diagram for explaining a solder bump connection step according to the present invention.

【符号の説明】[Explanation of symbols]

1 基板 2 光導波路 3 コア部 4 LD 5 活性層 6 バンプ 7、8 下地電極 9 Ti 膜 10 Pt 膜 11、12、14 Au 膜 13 レジスト 15 はんだバンプ 16 はんだ層 DESCRIPTION OF SYMBOLS 1 Substrate 2 Optical waveguide 3 Core part 4 LD5 Active layer 6 Bump 7, 8 Base electrode 9 Ti film 10 Pt film 11, 12, 14 Au film 13 Resist 15 Solder bump 16 Solder layer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 二つの面上にそれぞれ形成された下地電
極をはんだバンプを用いて相互に接続するに際し、中心
位置及び形状がほぼ等しい下地電極をそれぞれ形成する
工程、いずれか一方の下地電極上に、該下地電極より大
きく且つ該下地電極と中心をずらした形状を有するパタ
ーンを持ち、はんだとの濡れ性にすぐれた整合用金属膜
を形成する工程、いずれか一方の下地電極又は整合用金
属膜の上にはんだ層を形成する工程、及び、該はんだ層
を他方の整合用金属膜又は下地電極に対向して位置合わ
せし、加圧して仮止めし、更にはんだをリフローする工
程を含むことを特徴とするはんだバンプの接続方法。
A step of forming base electrodes having substantially the same center position and shape when connecting the base electrodes formed on the two surfaces to each other by using solder bumps; Forming a matching metal film having a pattern larger than the base electrode and having a shape shifted from the center of the base electrode and having excellent wettability with solder; A step of forming a solder layer on the film, and a step of aligning the solder layer so as to face the other matching metal film or the underlying electrode, temporarily fixing by pressing, and further reflowing the solder. A method for connecting solder bumps.
JP25498897A 1997-09-19 1997-09-19 Solder bump connection method Pending JPH1197146A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25498897A JPH1197146A (en) 1997-09-19 1997-09-19 Solder bump connection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25498897A JPH1197146A (en) 1997-09-19 1997-09-19 Solder bump connection method

Publications (1)

Publication Number Publication Date
JPH1197146A true JPH1197146A (en) 1999-04-09

Family

ID=17272655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25498897A Pending JPH1197146A (en) 1997-09-19 1997-09-19 Solder bump connection method

Country Status (1)

Country Link
JP (1) JPH1197146A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8837261B1 (en) 2013-08-27 2014-09-16 HGST Netherlands B.V. Electrical contact for an energy-assisted magnetic recording laser sub-mount

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8837261B1 (en) 2013-08-27 2014-09-16 HGST Netherlands B.V. Electrical contact for an energy-assisted magnetic recording laser sub-mount

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