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JPH1145839A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPH1145839A
JPH1145839A JP9200179A JP20017997A JPH1145839A JP H1145839 A JPH1145839 A JP H1145839A JP 9200179 A JP9200179 A JP 9200179A JP 20017997 A JP20017997 A JP 20017997A JP H1145839 A JPH1145839 A JP H1145839A
Authority
JP
Japan
Prior art keywords
chip
wafer
semiconductor
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9200179A
Other languages
Japanese (ja)
Inventor
Minoru Murata
稔 村田
Kenichi Ao
青  建一
Seiichiro Ishio
誠一郎 石王
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP9200179A priority Critical patent/JPH1145839A/en
Priority to US09/121,893 priority patent/US6143584A/en
Publication of JPH1145839A publication Critical patent/JPH1145839A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54406Marks applied to semiconductor devices or parts comprising alphanumeric information
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/5448Located on chip prior to dicing and remaining on chip after dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor chip and its manufacturing method, wherein improvement of yield of semiconductor products after chip mounting is markedly facilitated, as compared with the conventional technique by facilitating so as to relate manufacturing process record, i.e., manufacturing data of the respective semiconductor chips with characteristics data. SOLUTION: Effective information for defining chip positions on a wafer 1,e. g. chip position designation marks as numbers specific to chip regions 2 is imparted to respective semiconductor chips 3. The effective information for defining chip positions on the wafer (which are also called chip position designation information here in after) means information useful for deciding space positions on the wafer of specified chip regions, before being divided into semiconductor chips. As a result, the examination and analysis of relation between failures or irregularity of characteristics for semiconductor products after chip mounting and chip positions on a wafer are facilitated, and improvement in manufacturing processes for increasing the yield of semiconductor products after the chip mounting has been conducted.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は半導体チップおよびその
製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor chip and a method for manufacturing the same.

【0002】[0002]

【従来の技術】半導体製造プロセスは、ウエハ主面に分
割可能に区画された多数のチップ領域にそれぞれ回路機
能を作製し、その後、ウエハをダイシングして各チップ
に分割するウエハプロセスと、分割された個々のチップ
を実装する実装工程とからなり、チップ分割前、チップ
分割後、実装後の各段階の少なくともいずれかで特性検
査や外観検査などを行うが通常である。チップ分割前に
検査する場合には、検査結果が不良であるチップ領域に
はなんらかの不良マ−クを付与する。これにより、チッ
プ分割後、不良マ−クをもつチップは分離、排除され
る。
2. Description of the Related Art In a semiconductor manufacturing process, a circuit function is formed in each of a large number of chip areas divided on a main surface of a wafer, and thereafter, a wafer process in which a wafer is diced and divided into chips is divided into a wafer process and a wafer process. In general, a characteristic inspection, an appearance inspection, and the like are performed at least at each stage before chip division, after chip division, and after mounting. In the case of inspecting before chip division, some defective mark is given to the chip area where the inspection result is defective. Thus, after chip division, chips having defective marks are separated and eliminated.

【0003】[0003]

【発明が解決しようとする課題】ところが、不良チップ
は分割後実装前に排除されるにもかかわらず、チップ実
装後の半導体製品の不良原因が半導体チップそのものに
あるケ−スが多々ある。この場合、チップ実装後では半
導体チップを特定することができないため、半導体チッ
プそのものの特性や製造プロセス等と半導体製品の不良
項目との関連を解析するのが困難である。半導体製品で
は、チップ実装後の半導体製品の歩留まり向上が重要で
あり、不良項目の原因究明、改善が不断に実施されてい
るが、このことが不良項目の原因究明、改善による歩留
まり向上の支障となっていた。
However, in spite of the fact that defective chips are removed before being divided and mounted, there are many cases in which the cause of failure of a semiconductor product after chip mounting is the semiconductor chip itself. In this case, since the semiconductor chip cannot be specified after the chip is mounted, it is difficult to analyze the relationship between the characteristics of the semiconductor chip itself, the manufacturing process, and the like, and the defect item of the semiconductor product. In semiconductor products, it is important to improve the yield of semiconductor products after chip mounting, and the cause and improvement of defective items are continually investigated.However, this is an obstacle to improving the yield by investigating and improving the cause of defective items. Had become.

【0004】また、製造された半導体チップの特性向上
または製造プロセスの改善などにおいても、チップ実装
後の半導体製品の試験デ−タに基づいてそれを行う必要
があるにもかかわらず、上記と同様、各半導体チップそ
れぞれに与えられた製造プロセス履歴の特定が難しく、
十分な効果を得ることができなかった。本発明は、上記
問題点に鑑みなされたものであり、各半導体チップの製
造プロセス履歴すなわち製造デ−タと半導体チップの特
性デ−タとの関連付けを容易化し、チップ実装後の半導
体製品の歩留まり改善を従来より格段に容易化可能な半
導体チップ及びその製造方法を提供することを、その目
的としている。
[0004] In addition, in the case of improving the characteristics of a manufactured semiconductor chip or improving a manufacturing process, it is necessary to perform the test based on test data of a semiconductor product after chip mounting. , It is difficult to identify the manufacturing process history given to each semiconductor chip,
A sufficient effect could not be obtained. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has made it easy to associate the manufacturing process history of each semiconductor chip, that is, the manufacturing data with the characteristic data of the semiconductor chip, and to increase the yield of semiconductor products after chip mounting. It is an object of the present invention to provide a semiconductor chip and a method of manufacturing the same, which can be much easier to improve.

【0005】[0005]

【課題を解決するための手段】請求項1又は4に記載の
構成によれば、各半導体チップはそれぞれ、ウエハ上の
チップ位置の特定に有効な情報が付与される。ここで、
ウエハ上のチップ位置の特定に有効な情報(以下、チッ
プ位置指定情報とも言う)とは、半導体チップに分割さ
れる前の所定のチップ領域のウエハ上の空間位置を決定
するのに役立つ情報を意味する。
According to the structure described in claim 1 or 4, information effective for specifying the chip position on the wafer is given to each semiconductor chip. here,
Information useful for specifying a chip position on a wafer (hereinafter, also referred to as chip position designation information) is information useful for determining a spatial position on a wafer of a predetermined chip area before being divided into semiconductor chips. means.

【0006】同一プロセスラインを流れる各ウエハ上に
おいて各チップ領域は、同じ配列パターンで配列される
のは周知の通りである。したがって、各チップ領域が、
ウエハ上の自己の位置に関する情報をもつことにより、
チップ分割後であっても、各半導体チップの元のウエハ
上のチップ位置を知ることができるので、実装後の半導
体製品の不良や特性ばらつきと、半導体チップの特性や
ウエハ上のチップ位置との関係を調査、解析するのが容
易となる。よって、実装後の半導体製品の歩留まり向上
のための、半導体チップ特性の検査規格絞り込みや製造
プロセス上の原因解明が容易となる。
It is well known that each chip area is arranged in the same arrangement pattern on each wafer flowing in the same process line. Therefore, each chip area
By having information about its position on the wafer,
Even after chip division, since the chip position of each semiconductor chip on the original wafer can be known, the defect and characteristic variation of the semiconductor product after mounting and the characteristics of the semiconductor chip and the chip position on the wafer can be compared. Investigate and analyze relationships easily. Therefore, it becomes easy to narrow down the inspection standards of the semiconductor chip characteristics and to clarify the cause in the manufacturing process for improving the yield of the semiconductor product after mounting.

【0007】上記チップ位置指定情報としては、ウエハ
上の各チップ領域ごとに付与された互いに異なるチップ
番号やチップ符号が好適であるが、番号や符号の数を減
らすために、同一ウエハ上の複数のチップ領域に同一の
番号や符号を付与することも可能である。例えば、各チ
ップ領域を、互いに隣接する複数のチップ領域ごとにグ
ループ化し、各グループごとに番号又は符号を付与して
もよい。すなわち、同一グループ内の各チップ領域はウ
エハ上において空間的に近接するので、それらの製造プ
ロセス条件の差は、他のグループのチップ領域との間の
差より小さく、上述した半導体チップの不良や特性のば
らつきと、ウエハ上のチップ位置との関連を調査、解析
するのに役立つ。
As the chip position designation information, different chip numbers and chip codes assigned to respective chip regions on the wafer are preferable, but in order to reduce the number of numbers and codes, a plurality of chip numbers and codes on the same wafer are required. It is also possible to assign the same number or code to the chip areas of the above. For example, each chip area may be grouped into a plurality of chip areas adjacent to each other, and a number or a code may be assigned to each group. That is, since the respective chip regions in the same group are spatially close to each other on the wafer, the difference in the manufacturing process conditions is smaller than the difference between the chip regions in the other groups, and the above-described semiconductor chip failure and It is useful for investigating and analyzing the relationship between the characteristic variation and the chip position on the wafer.

【0008】請求項2記載の構成によれば請求項1記載
の構成において更に、各半導体チップにはそれぞれ、元
のウエハ自体の特定に有効な情報が付与される。ここ
で、ウエハの特定に有効な情報(以下、ウエハ特定情報
とも言う)とは、半導体チップに分割される前のチップ
領域が存在した元のウエハを指定するのに役立つ情報を
意味する。
According to the second aspect of the present invention, the semiconductor chip is further provided with information effective for specifying the original wafer itself. Here, the information effective for specifying a wafer (hereinafter also referred to as wafer specifying information) means information useful for specifying an original wafer in which a chip area before being divided into semiconductor chips was present.

【0009】同一プロセスラインを流れる各ウエハであ
っても、各ウエハの製造プロセス条件は微妙にばらつく
ことが知られている。したがって、チップ領域ごとにウ
エハを特定するのに役立つ情報を付与すれば、ウエハ分
割後の半導体チップに障害が生じたり、特性がばらつい
たりする場合であっても、元のウエハを特定することが
容易となるので、実装後の半導体製品の不良や特性のば
らつきと、ウエハに与えた製造プロセス条件との関連を
調査、解析するのが容易となり、半導体チップの歩留ま
り向上のための製造プロセスの改善が容易となる。
[0009] It is known that the manufacturing process conditions of each wafer vary slightly even for each wafer flowing in the same process line. Therefore, if information useful for specifying a wafer is provided for each chip area, it is possible to specify the original wafer even if a failure occurs or the characteristics of the semiconductor chips after the wafer division are varied. This makes it easier to investigate and analyze the relationship between semiconductor product defects and characteristic variations after mounting and the manufacturing process conditions given to the wafer, and to improve the manufacturing process to improve the yield of semiconductor chips. Becomes easier.

【0010】なお、製造プロセス各部の実際の履歴は記
録、保持されているので、半導体チップがかって属した
ウエハの特定がなされれば、そのウエハに付与された製
造プロセス履歴は判明する。上記ウエハ特定情報として
は、各ウエハごとに付与された互いに異なるウエハ番号
やウエハ符号が好適であるが、番号や符号の数を減らす
ために、例えば製造プロセス中で空間的又は時間的に近
接する複数のウエハに同一の番号や符号を付与すること
も可能である。例えば、熱処理を同時に行うウエハ群に
同一のウエハ番号を与えれば、炉内のウエハ位置による
熱処理条件のばらつきによる影響は特定できないもの
の、各熱処理ごとの製造プロセス条件のばらつきによる
半導体チップの特性ばらつきや不良を把握、解析するこ
とが可能となる。すなわち、同一グループ内の各ウエハ
は製造プロセス中で時間又は空間的に近接するので、そ
れらの製造プロセス条件の差は、他のグループのウエハ
との間の差より小さいので、上述した半導体チップの不
良や特性のばらつきと、ウエハに与えた製造プロセス条
件との関連を調査、解析するのに役立つ。更に、製造プ
ロセス完了直後の時刻などを示す符号を上記ウエハ特定
情報として各チップ領域に付与することも可能である。
Since the actual history of each part of the manufacturing process is recorded and held, if the wafer to which the semiconductor chip belongs is specified, the manufacturing process history given to the wafer becomes clear. As the wafer identification information, different wafer numbers and wafer codes assigned to each wafer are preferable, but in order to reduce the number of numbers and codes, for example, they are spatially or temporally close in a manufacturing process. It is also possible to assign the same number or code to a plurality of wafers. For example, if the same wafer number is given to a group of wafers to be simultaneously subjected to heat treatment, the influence of the variation in the heat treatment conditions due to the wafer position in the furnace cannot be specified, but the variation in the characteristics of the semiconductor chip due to the variation in the manufacturing process conditions for each heat treatment. Defects can be grasped and analyzed. That is, since the wafers in the same group are close in time or space during the manufacturing process, the difference in the manufacturing process conditions is smaller than the difference between the wafers in the other groups, so that the above-described semiconductor chip It is useful for investigating and analyzing the relationship between defects and variations in characteristics and manufacturing process conditions given to wafers. Further, a code indicating a time immediately after the completion of the manufacturing process or the like can be given to each chip area as the wafer specifying information.

【0011】請求項3記載の構成によれば請求項1記載
の構成において更に、半導体チップとは別体に形成され
た書き込み可能な記憶素子に、上記半導体チップがかっ
て属したウエハ自体の特定に有効な情報が書き込まれ、
更にこれら書き込み可能な記憶素子及び半導体チップは
同じパッケ−ジに収容する。このようにすれば、請求項
2記載の構成と同じ作用効果を奏することができる。
According to a third aspect of the present invention, in the configuration of the first aspect, the wafer itself to which the semiconductor chip once belongs belongs to a writable storage element formed separately from the semiconductor chip. Valid information is written,
Further, the writable storage element and the semiconductor chip are housed in the same package. With this configuration, the same operation and effect as the configuration according to claim 2 can be obtained.

【0012】請求項5記載の構成によれば請求項4記載
の構成において更に、互いに異なるチップ位置指定情報
がウエハ上の全チップ領域に付与される。このようにす
れば、チップ領域の完全な確定が可能となるので、半導
体チップに与えられた製造プロセス履歴の精密な調査、
解析が可能となる。請求項6記載の構成によれば請求項
4記載の構成において更に、チップ位置指定情報は視認
可能なパタ−ンとしてパタ−ニング工程でチップ領域に
形成される。
According to a fifth aspect of the present invention, in the configuration of the fourth aspect, different chip position designation information is provided to all chip areas on the wafer. In this way, a complete determination of the chip area becomes possible, so that a detailed investigation of the manufacturing process history given to the semiconductor chip,
Analysis becomes possible. According to the configuration of claim 6, in the configuration of claim 4, the chip position designation information is formed in the chip area in a patterning step as a visually recognizable pattern.

【0013】請求項7記載の構成によれば請求項4乃至
6のいずれか記載の構成において更に、ウエハの特定に
有効な情報が付与される。請求項8記載の構成によれば
請求項4乃至7のいずれかに記載の構成において更に、
これらチップ位置指定情報やウエハ特定情報付与のため
の情報付与工程は、チップ領域に所定の回路機能を形成
するための工程と同じ工程にて実施される。このように
すれば、プロセス延長を回避することができ、新規な工
程の追加が少なくて済む。
According to the configuration of claim 7, in the configuration of any of claims 4 to 6, information effective for specifying a wafer is further added. According to the configuration of claim 8, in the configuration of any of claims 4 to 7, further,
The information providing step for providing the chip position specifying information and the wafer specifying information is performed in the same step as the step for forming a predetermined circuit function in the chip area. By doing so, the process extension can be avoided, and the number of new steps added can be reduced.

【0014】[0014]

【発明を実施するための形態】本発明の好適な態様を以
下の実施例を参照して説明する。 (実施例1)この発明の半導体装置の製造方法の一実施
例を以下に説明する。図1に示す模式図において、ウエ
ハ1には、予め定められた配列パターンで一定数のチッ
プ領域2が区画、形成され、更に各チップ領域2には互
いに異なる例えばアルファベット文字列(ここでは一字
のみ図示する)からなるチップ位置指定符号(チップ位
置指定情報)a〜zが形成される。ここで、各ウエハ1
における同一の空間位置のチップ領域2には同一のチッ
プ位置指定符号が与えられた後、各チップ領域2はダイ
シングにより分割されて、それぞれ半導体チップ3とな
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described with reference to the following examples. (Embodiment 1) An embodiment of a method of manufacturing a semiconductor device according to the present invention will be described below. In the schematic diagram shown in FIG. 1, a fixed number of chip regions 2 are defined and formed in a predetermined arrangement pattern on a wafer 1, and each chip region 2 has a different character string such as an alphabetic character string (here, one character). (Illustrated only in FIG. 3) are formed. Here, each wafer 1
After the same chip position designation code is given to the chip regions 2 at the same spatial position in FIG. 2, each chip region 2 is divided by dicing to become a semiconductor chip 3 respectively.

【0015】これにより、ウエハ1から分割された後の
半導体チップがウエハ1上のどのチップ領域から切り出
されたかを知ることができる。この実施例におけるチッ
プ位置指定符号a〜zの形成工程を図2のプロセスフロ
ー図を参照して説明する。このプロセスフローは、加速
度センサ製造工程を示すものであって、まず、表面抵抗
形成工程100では、シリコン基板表面へのシリコン酸
化膜形成、イオン注入やデポによる拡散抵抗形成が行わ
れる。
Thus, it is possible to know from which chip area on the wafer 1 the semiconductor chip divided from the wafer 1 has been cut. The steps of forming the chip position designation codes a to z in this embodiment will be described with reference to the process flow diagram of FIG. This process flow shows an acceleration sensor manufacturing step. First, in a surface resistance forming step 100, a silicon oxide film is formed on the surface of a silicon substrate, and a diffusion resistance is formed by ion implantation or deposition.

【0016】次に、コンタクトホ−ル形成工程200と
して、フトリソグラフィにより各チップ領域の所定部位
上でシリコン酸化膜を選択開口し、コンタクトホ−ルを
形成する。更にこれと同時に各チップの所定領域上にそ
れぞれ異なる文字列または番号となる形状(チップ位置
指定符号)を形成する(符号パタ−ン形成工程、情報付
与工程200)。なお、ウエハ面内の各チップに異なる
形状を形成するため、マスクに形成されているパタ−ン
はウエハサイズのパタ−ンであり、等倍露光を行ってい
る。なお、縮小露光でも可能であるが、ウエハ面内全て
のチップ領域それぞれに異なる形状をもたせるには、当
然複数枚のマスクが必要となる。
Next, as a contact hole forming step 200, a contact hole is formed by selectively opening a silicon oxide film on a predetermined portion of each chip region by ft lithography. At the same time, shapes (chip position designation codes) having different character strings or numbers are formed on a predetermined area of each chip (code pattern forming step, information adding step 200). In order to form a different shape on each chip in the wafer surface, the pattern formed on the mask is a pattern of a wafer size, and the same-size exposure is performed. Although reduction exposure is possible, a plurality of masks are naturally required to provide different shapes to all chip regions in the wafer surface.

【0017】ここでは、チップ位置指定符号をシリコン
酸化膜のパタ−ニングにより形成したが、当然それ以外
のもの(例えばシリコン基板、アルミ膜、保護膜)にお
けるパタ−ニングによっても形成可能である。次に、ア
ルミ配線工程300にて、アルミ膜デポジット、フォト
リソグラフィにより配線し、保護膜形成工程400とし
て保護膜(例えばシリコン窒化膜)を形成し、フォトリ
ソグラフィにより必要な部分(例えばワイヤボンディン
グパッド)を選択開口する(開口工程400)。
Although the chip position designation code is formed by patterning a silicon oxide film here, it can be formed by patterning other materials (for example, a silicon substrate, an aluminum film, and a protective film). Next, in an aluminum wiring step 300, wiring is performed by aluminum film deposition and photolithography, a protection film (for example, a silicon nitride film) is formed in a protection film forming step 400, and a necessary portion (for example, a wire bonding pad) is formed by photolithography. Are selectively opened (opening step 400).

【0018】次に、ウエハナンバリング工程500とし
て、ウエハの非チップ領域において、例えば露出するア
ルミ膜に機械的にウエハ番号やロット番号を記載する。
次に、検査工程600として、各チップ領域の電気特性
を検査する。この際のデ−タは例えばコンピュ−タにウ
エハ番号やチップ番号などとともに保存される。
Next, as a wafer numbering step 500, in a non-chip region of the wafer, for example, a wafer number or a lot number is mechanically described on an exposed aluminum film.
Next, as an inspection step 600, the electrical characteristics of each chip area are inspected. The data at this time is stored in a computer together with a wafer number, a chip number, and the like.

【0019】次に、裏面加工・貫通溝形成工程700と
して、シリコン基盤裏面エッチング、貫通溝形成により
加速度センサに必要なマス部や梁部を形成する。この
後、再度上記のような各チップの電気検査が行われ、同
様にデ−タが保存される。次に、カット工程800とし
て、ウエハ1から各チップ領域2をダイシングして半導
体チップ3を形成する。各半導体チップ3はウエハやロ
ット毎に層別されて次の組み付け工程900に送られ、
図3のようなパッケ−ジ6に組み付けられる。ここで
は、前記加速度センサ半導体チップの他に信号処理用の
バイポ−ラICチップ4、電気トリミング用のEPRO
M付きMOSICチップ5が実装される。
Next, as a back surface processing / through groove forming step 700, a mass portion and a beam portion necessary for the acceleration sensor are formed by etching the back surface of the silicon substrate and forming a through groove. Thereafter, the electrical inspection of each chip as described above is performed again, and the data is similarly stored. Next, as a cutting step 800, each chip region 2 is diced from the wafer 1 to form a semiconductor chip 3. Each semiconductor chip 3 is layered for each wafer or lot and sent to the next assembling step 900,
It is assembled in a package 6 as shown in FIG. Here, in addition to the acceleration sensor semiconductor chip, a bipolar IC chip 4 for signal processing and an EPRO for electric trimming
The MOS IC chip 5 with M is mounted.

【0020】次にトリミング工程1000として、実装
後の半導体製品特性を電気トリミングにより調整する。
このとき、上記EPROMにウエハ番号やロット番号が
識別できる情報を書き込む。ウエハ番号やロット番号そ
のものを書きこんでも良いし、実装後の半導体製品個々
の番号を書きこんでおき、この番号と対応するウエハ番
号やロット番号を組み付け履歴として別途コンピュ−タ
に保管してもよい。また、上記EPROMの代わりにそ
の他の形式の書き込み可能メモリを用いても良いし、薄
膜抵抗ヒュ−ズにより行なっても良い。また、金属薄膜
抵抗のレ−ザ−トリミングを用いれば、識別符号記入用
のエリアを形成しておき、レ−ザ−トリミング時にレ−
ザ−により金属薄膜をパタ−ニングすることで識別符号
を形成しても良い。その他にも、パッケ−ジ等に上記と
同等の番号、符号を例えば印刷によりマ−キングしても
よい。
Next, as a trimming step 1000, the semiconductor product characteristics after mounting are adjusted by electric trimming.
At this time, information for identifying the wafer number and the lot number is written in the EPROM. The wafer number or lot number itself may be written, or the number of each semiconductor product after mounting may be written, and this number and the corresponding wafer number or lot number may be separately stored in the computer as an assembly history. Good. Further, a writable memory of another type may be used in place of the EPROM, or a thin film resistor fuse may be used. Also, if laser trimming of a metal thin film resistor is used, an area for writing an identification code is formed in advance, and the laser is trimmed during laser trimming.
The identification code may be formed by patterning the metal thin film with a laser beam. Alternatively, the same numbers and symbols as described above may be marked on a package or the like, for example, by printing.

【0021】次に、検査工程1100として、チップ実
装後の半導体製品個々の特性検査を行ない、良品を出荷
したり、アッセンブリに組み付けるための次工程に送
る。この時のデ−タもコンピュ−タ等に保管する。な
お、この実施例では、ウエハの識別は組み付け後に行な
うが、半導体チップ3上に前記EPROMの書き込み可
能メモリや金属薄膜等を加え、ダイシング前にウエハ識
別情報を書き込めば、ダイシング以降の半導体チップの
ウエハ毎の層別管理の面倒を軽減することもできる。ま
た、この際にはチップ位置識別情報を同時に書き込んで
もよい。
Next, as an inspection step 1100, a characteristic inspection of each semiconductor product after chip mounting is performed, and a non-defective product is sent to a next step for assembling into an assembly. The data at this time is also stored in a computer or the like. In this embodiment, wafer identification is performed after assembly. However, if a writable memory of EPROM or a metal thin film is added on the semiconductor chip 3 and wafer identification information is written before dicing, the semiconductor chip after dicing can be identified. The trouble of layer-by-layer management for each wafer can also be reduced. In this case, the chip position identification information may be simultaneously written.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のチップ位置指定符号付きの半導体チッ
プの一例を示す模式平面図である。
FIG. 1 is a schematic plan view showing an example of a semiconductor chip with a chip position designation code of the present invention.

【図2】本発明を具体化した加速度センサの製造工程の
一実施例を示す工程図である。
FIG. 2 is a process diagram showing one embodiment of a manufacturing process of an acceleration sensor embodying the present invention.

【図3】本発明の半導体チップを実装した状態を示す平
面図である。
FIG. 3 is a plan view showing a state where a semiconductor chip of the present invention is mounted.

【符号の説明】[Explanation of symbols]

1はウエハ、2はチップ領域、3は半導体チップであ
る。a〜zはチップ位置指定符号。
1 is a wafer, 2 is a chip area, and 3 is a semiconductor chip. a to z are chip position designation codes.

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】所定のウエハから切断分離されてなる半導
体チップをもつ半導体装置において、 前記半導体チップは、前記ウエハ上のチップ位置の特定
に有効な情報をもつことを特徴とする半導体チップ。
1. A semiconductor device having a semiconductor chip cut and separated from a predetermined wafer, wherein the semiconductor chip has information effective for specifying a chip position on the wafer.
【請求項2】請求項1記載の半導体装置において、 前記半導体チップは、前記ウエハ自体の特定に有効な情
報をもつことを特徴とする半導体装置。
2. The semiconductor device according to claim 1, wherein said semiconductor chip has information effective for specifying said wafer itself.
【請求項3】請求項1記載の半導体装置において、 前記半導体チップとは別体に形成されるとともに前記ウ
エハ自体の特定に有効な情報が書き込まれた記憶素子
と、前記記憶素子及び前記半導体チップを収容するパッ
ケ−ジとを有することを特徴とする半導体装置。
3. The semiconductor device according to claim 1, wherein the storage element is formed separately from the semiconductor chip and has information effective for specifying the wafer itself, and the storage element and the semiconductor chip. And a package accommodating the semiconductor device.
【請求項4】所定のウエハに所定の回路機能を有する多
数のチップ領域を形成した後、各前記チップ領域を分割
して形成された半導体チップを有する半導体装置の製造
方法において、 前記ウエハ上の自己のチップ位置の特定に有効な情報を
前記分割前に前記チップ領域毎に付与する情報付与工程
を有することを特徴とする半導体装置の製造方法。
4. A method of manufacturing a semiconductor device having semiconductor chips formed by forming a plurality of chip regions having a predetermined circuit function on a predetermined wafer and then dividing each of the chip regions. A method of manufacturing a semiconductor device, comprising: an information providing step of providing information effective for specifying its own chip position for each of the chip regions before the division.
【請求項5】請求項4記載の半導体装置の製造方法にお
いて、 前記情報付与工程は、互いに異なるチップ位置指定情報
を前記ウエハ上の全チップ領域に付与する工程を含むこ
とを特徴とする半導体装置の製造方法。
5. The semiconductor device manufacturing method according to claim 4, wherein said information providing step includes a step of providing different chip position designation information to all chip regions on said wafer. Manufacturing method.
【請求項6】請求項4記載の半導体装置の製造方法にお
いて、 前記情報付与工程は、前記情報を視認可能に表示するパ
タ−ンを前記チップ領域に形成するパタ−ニング工程か
らなることを特徴とする半導体装置の製造方法。
6. The method of manufacturing a semiconductor device according to claim 4, wherein said information providing step comprises a patterning step of forming a pattern for visually displaying said information in said chip region. Manufacturing method of a semiconductor device.
【請求項7】請求項4乃至6のいずれかに記載の半導体
装置の製造方法において、 前記ウエハ自体の特定に有効な情報を前記分割前に前記
チップ領域毎に付与する情報付与工程を有することを特
徴とする半導体装置の製造方法。
7. The method for manufacturing a semiconductor device according to claim 4, further comprising an information providing step of providing information effective for specifying said wafer itself to each of said chip regions before said division. A method for manufacturing a semiconductor device, comprising:
【請求項8】請求項4乃至7のいずれかに記載の半導体
装置の製造方法において、 前記情報付与工程は、前記チップ領域に前記回路機能を
形成するための工程と同じ工程にて実施されることを特
徴とする半導体装置の製造方法。
8. The method for manufacturing a semiconductor device according to claim 4, wherein the information providing step is performed in the same step as the step for forming the circuit function in the chip region. A method for manufacturing a semiconductor device, comprising:
JP9200179A 1997-07-25 1997-07-25 Semiconductor device and its manufacture Pending JPH1145839A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9200179A JPH1145839A (en) 1997-07-25 1997-07-25 Semiconductor device and its manufacture
US09/121,893 US6143584A (en) 1997-07-25 1998-07-24 Method for fabrication of a semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9200179A JPH1145839A (en) 1997-07-25 1997-07-25 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPH1145839A true JPH1145839A (en) 1999-02-16

Family

ID=16420116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9200179A Pending JPH1145839A (en) 1997-07-25 1997-07-25 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPH1145839A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1139414A2 (en) * 2000-03-27 2001-10-04 Nec Corporation Method for failure analysis during the manufacturing semiconductor devices
JP2002287813A (en) * 2001-03-26 2002-10-04 Sumitomo Forestry Co Ltd Material machining management system
US8803278B2 (en) 2010-06-07 2014-08-12 Mitsubishi Electric Corporation Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1139414A2 (en) * 2000-03-27 2001-10-04 Nec Corporation Method for failure analysis during the manufacturing semiconductor devices
US6349240B2 (en) 2000-03-27 2002-02-19 Nec Corporation Semiconductor device manufacturing system and method of manufacturing semiconductor devices
EP1139414A3 (en) * 2000-03-27 2002-08-07 Nec Corporation Method for failure analysis during the manufacturing semiconductor devices
US7054705B2 (en) 2000-03-27 2006-05-30 Nec Electronics Corporation Method of manufacturing semiconductor devices
JP2002287813A (en) * 2001-03-26 2002-10-04 Sumitomo Forestry Co Ltd Material machining management system
US8803278B2 (en) 2010-06-07 2014-08-12 Mitsubishi Electric Corporation Semiconductor device

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