JPH11335872A - Substrate treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate treating apparatus capable of changing the angle of inclination of a substrate. SOLUTION: The front end of a rod 73 of an air cylinder 71 is connected near to the one end edge 74 of the rear surface of an etching treatment vessel 2. The front end of a rod 83 of an air cylinder 81 is connected near to one end edge 84 of the rear surface of a washing treatment vessel 3. The etching treatment vessel 2 and the washing treatment vessel 3 are freely turnably supported at a supporting shaft 91 along a transportation direction TD near the end edges on the side opposite to the one-side end edges 74, 84 of the respective rear surfaces thereof. As a result, the substrate in the etching treatment vessel 2 may be inclined by extending the rod 73 of the air cylinder 71 and inclining the etching treatment vessel 2 around the supporting shaft 91. The substrate in the washing treatment vessel 3 may be inclined by extending the rod 83 of the air cylinder 81.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to processing of various substrates to be processed such as a flat panel display (FPD) substrate such as a glass substrate for a liquid crystal display, a glass substrate for a photomask, and a semiconductor wafer. The present invention relates to a substrate processing apparatus for performing the process.

[0002]

2. Description of the Related Art In a manufacturing process of a flat panel display such as a liquid crystal display device, a substrate processing apparatus for performing a process using a processing liquid such as an etching liquid on the surface of a substrate is used. This type of substrate processing apparatus includes an etching unit for supplying an etching solution to the surface of the substrate to perform an etching process, and a water washing unit for washing away the etching solution attached to the substrate after the etching process with pure water. There is a configuration in which a plurality of processing units such as a processing unit are connected in series. Each processing unit is provided with a plurality of transport rollers arranged in parallel with each other, and the substrate to be processed is subjected to processing by the processing liquid while being transported by the plurality of transport rollers. ing.

In recent years, in a substrate processing apparatus having the above configuration, a transport roller shaft is disposed in a state inclined with respect to a horizontal plane, and a substrate is transported in an inclined posture.
One that supplies a processing liquid to the substrate has been proposed. In such an apparatus, the processing liquid supplied to the substrate flows along the inclination of the substrate, and the processing liquid does not stay on the substrate, so that substantially uniform processing can be performed on the entire surface of the substrate.

[0004]

However, in the conventional apparatus described above, the inclination angle of the transport roller shaft is fixed, and after the apparatus is assembled, the inclination angle of the transport roller axis is changed to change the substrate angle. The inclination angle cannot be changed. Therefore, the rotation axes of the transport rollers provided in the plurality of processing units are all inclined at the same inclination angle so that the substrate can be transferred between adjacent processing units in a favorable manner. Therefore, it cannot be said that the processing is performed in any of the processing units in which the substrate is tilted to the optimum tilt angle for the processing.

An object of the present invention is to solve the above-mentioned technical problems and to provide a substrate processing apparatus capable of changing a tilt angle of a substrate.

[0006]

According to a first aspect of the present invention, there is provided a processing chamber for supplying a processing liquid to a substrate housed therein to perform processing. A transfer means provided in the processing chamber for transferring a substrate in a predetermined transfer direction, and a transfer means provided outside the processing chamber and tilting the processing chamber around an axis substantially parallel to the transfer direction. And a tilting means for the substrate processing apparatus.

According to this configuration, the inclination angle of the substrate transferred by the transfer means can be changed by tilting the processing chamber and tilting the transfer means in the processing chamber.

According to a second aspect of the present invention, there is provided a first processing chamber for accommodating and processing a substrate, and a first processing chamber provided in the first processing chamber for transporting the substrate along a predetermined transport direction. A first transfer means, and a first means provided outside the first processing chamber for tilting the first processing chamber about an axis substantially parallel to the transfer direction and tilting the substrate in the first processing chamber. Tilting means, first processing liquid supply means for supplying a processing liquid to the substrate in a state where the substrate is tilted at the first tilt angle by the first tilting means, and a downstream side of the first processing chamber with respect to the transport direction. A second processing chamber for accommodating and processing a substrate carried out of the first processing chamber; and a second processing chamber provided in the second processing chamber for transporting the substrate in the transport direction. Second Feeding means, and a second tilt provided outside the second processing chamber for tilting the second processing chamber about an axis substantially parallel to the transfer direction to tilt a substrate in the second processing chamber. Means, a second processing liquid supply means for supplying a processing liquid to the substrate in a state where the substrate is tilted at the second tilt angle by the second tilt means, and a substrate from the first processing chamber to the second processing chamber. When the substrate is transferred, at least one of the first tilting means and the second tilting means is operated, and the tilt angle of the substrate when transported by the first transporting means and transport by the second transporting means are performed. And an angle adjusting means for matching the inclination angle of the substrate when the substrate processing is performed.

According to this configuration, even when the first inclination angle and the second inclination angle are different, when the substrate is transferred from the first processing chamber to the second processing chamber, the inclination angle of the first processing chamber is changed. And the inclination angle of the second processing chamber can be matched, so that the substrate can be smoothly transferred from the first processing chamber to the second processing chamber. Thus, the first tilt angle and the second tilt angle can be set to the most suitable angles for the respective processes.

In addition, the substrate which has been processed in the first processing chamber while being tilted by the first tilt angle is tilted by a second tilt angle different from the first tilt angle in the second processing chamber. Is performed, for example, it is conceivable to provide a substrate transfer mechanism provided with a plurality of transport rollers capable of changing the inclination angle between the first processing chamber and the second processing chamber. However, when this configuration is adopted, the area occupied by the device increases.
On the other hand, according to the present invention, it is not necessary to interpose a special transfer mechanism between the first processing chamber and the second processing chamber, so that the occupied area of the substrate processing apparatus does not increase.

The state where the substrate is inclined by the first inclination angle includes the state where the substrate is not inclined, that is, the state where the first inclination angle is 0 degrees. The state where the substrate is inclined by the second inclination angle also includes the state where the substrate is not inclined, that is, the state where the second inclination angle is 0 degree.

Further, the second inclination angle may be changed during processing of the substrate. That is, the second inclination angle at the start of the processing in the second processing chamber may be different from the second inclination angle at the end of the processing.

Further, at the start of the processing in the second processing chamber, if the inclination angle of the substrate is not important for processing the substrate, the angle adjusting means moves from the first processing chamber to the second processing chamber. Preferably, when the substrate is transferred, the second tilting means is operated to make the tilt angle of the substrate when transported by the second transporting means coincide with the first tilting angle. With this configuration, after the processing in the first processing chamber is completed, the processed substrate can be immediately discharged from the first processing chamber.

[0014]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view showing a simplified configuration of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus supplies an etchant to the surface of the substrate S, for example, while sequentially transporting the substrates S such as a glass substrate for a liquid crystal display device in the transport direction TD. This is an apparatus for performing an etching process.

In order to realize such a function, this substrate processing apparatus is arranged in the order from the upstream side in the transport direction TD.
An inlet conveyor 1, an etching tank 2, a washing tank 3 and an outlet conveyor 4 are connected together in the transport direction TD. The entrance conveyor 1, the etching treatment tank 2, the washing treatment tank 3, and the exit conveyor 4,
It has a plurality of transport rollers 11, 21, 31, and 41 whose rotation axes are arranged in a parallel positional relationship to each other. The transport rollers 11, 21, 31, and 41 are respectively in the transport direction T
By rotating around an axis extending in a direction orthogonal to D, the substrate S placed thereon can be transported along the transport direction TD. When an unprocessed substrate S is placed on the transport roller 11 of the entrance conveyor 1 by a substrate loading robot (not shown), the substrate S is sequentially loaded into the etching tank 2 and the washing tank 3 and subjected to the processing. Are discharged onto the transport rollers 41 of the exit conveyor 4. The processed substrate S delivered to the exit conveyor 4 is removed from above the transport rollers 41 by a substrate unloading robot (not shown).

The transport roller 11 of the entrance conveyor 1 is provided with its rotation axis extending in a horizontal direction perpendicular to the transport direction TD, and horizontally supports the substrate S placed by the substrate loading robot. While being conveyed toward the etching processing tank 2.

The etching tank 2 is formed in a substantially rectangular parallelepiped shape. An opening 2 </ b> A for introducing the substrate S conveyed from the entrance conveyor 1 is formed on a surface of the etching tank 2 on the side of the entrance conveyor 1. An opening 2B for carrying out the substrate S after the etching process is formed on the surface of the etching bath 2 on the side of the washing bath 3.

An upper spray nozzle 22 for spraying an etching solution on the upper surface of the substrate S is provided in the etching bath 2. The etching liquid stored in the etching liquid tank 24 is pumped to the upper spray nozzle 22 by a pump 25 and is supplied through an etching liquid supply pipe 26. Etching supply pipe 26
An air valve 27 is interposed in the middle of the upper spray nozzle 2 by opening and closing the air valve 27.
The spray liquid can be ejected from the nozzle 2, or the ejection can be stopped.

The etching solution supplied to the substrate S from the spray nozzle 22 is supplied to the etching solution tank 2 via a collection pipe 61 connected to the bottom surface of the etching tank 2.
4 to be collected.

With the above configuration, an etching solution can be supplied toward the surface of the substrate S carried into the etching processing tank 2 and the surface can be subjected to the etching process using the etching solution.

While the etchant is being supplied to the substrate S, the transport roller 21 is rotated forward to transport the substrate S in the transport direction TD, or is returned to return the substrate S in a direction opposite to the transport direction. Has been reversed. As a result, the substrate S is swung in the etching tank 2 and the etchant ejected from the spray nozzle 22 can be supplied almost uniformly to the entire surface of the substrate S, and the etching can be performed without increasing the length of the transport path. A sufficient and sufficient processing time for the process can be secured.

Further, while the etching solution is being supplied to the substrate S, the etching processing tank 2 is moved by a tilt mechanism described later around a predetermined first axis about an axis parallel to the transport direction TD.
It is designed to be inclined by the inclination angle. As a result, the substrate S on the transport roller S is inclined by the first inclination angle, and the etching liquid supplied to the upper surface of the substrate S flows down along the inclination of the substrate S. There is no portion where stagnation occurs, and substantially uniform processing can be performed on the entire surface of the substrate S.

The etched substrate S is passed through a draining roller 62 provided in the vicinity of the opening 2B formed in the etching tank 2 so that the etching liquid adhering to its surface is removed to some extent. After, opening 2
B is carried out to the washing tank 3.

The washing tank 3 is formed in a substantially rectangular parallelepiped shape. An opening 3A is formed on the surface of the rinsing bath 3 on the side of the etching bath 2 at a position facing the opening 2B of the etching bath 2. In addition, an opening 3B for carrying out the substrate S after the rinsing process is formed on a surface of the rinsing bath 3 on the exit conveyor 4 side.

In the rinsing tank 3, pure water spray nozzles 32 and 33 for supplying pure water to the upper and lower surfaces of the substrate S are provided above and below the transport roller 31, respectively. Pure water stored in a pure water tank 34 is pumped out by a pump 35 and supplied to the pure water spray nozzle 32 through a pure water supply pipe 36. Further, pure water pumped from a pure water tank 34 by a pump 35 is supplied to the pure water spray nozzle 33 through a branch pipe 38 which is branched and connected to a pure water supply pipe 36. The pure water supply pipe 36 includes a pump 35 and a branch pipe 38.
An air valve 37 is interposed between the connecting portions of the nozzles, and by opening and closing the air valve 37, pure water is discharged from the pure water spray nozzles 32 and 33, or the discharge is stopped. be able to.

The pure water supplied to the substrate is supplied to a solenoid valve 65.
And collected in the pure water tank 34 via the collection pipe 66 or discarded through the solenoid valve 67 and the waste liquid pipe 68. Specifically, in the initial period when the cleaning process for the substrate S is started, the solenoid valve 65 is closed and the solenoid valve 67 is opened.
As a result, pure water containing a large amount of an etching solution or the like is discarded. Thereafter, after a certain period of time, the solenoid valve 65 is opened and the solenoid valve 67 is closed. Thus, of the pure water used for cleaning the substrate S, relatively pure water can be collected in the pure water tank 34.

With the above structure, the pure water spray nozzle 3 is provided on the surface of the substrate S treated with the etching solution.
Pure water can be supplied from 2 and 33, and the etching solution and the like adhering to the surface can be washed away.

Further, as in the case of the etching processing tank 2, while the pure water is being supplied to the substrate S, the transport rollers 31 are alternately rotated forward or inverted, and the substrate S is swung in the washing processing tank 3. Is done. Thereby, the pure water spray nozzles 32, 3
The entire surface of the substrate S can be thoroughly washed with pure water spouted from the substrate 3, and a process sufficient and sufficient to remove the etchant from the surface of the substrate S without increasing the length of the transport path of the washing tank 3. I can secure time.

Further, while the pure water is being supplied to the substrate S, the washing tank 3 is tilted by a predetermined second tilt angle around an axis parallel to the transport direction TD by a tilt mechanism described later. Has become. As a result, the substrate S on the transport roller S is tilted by the second tilt angle with respect to the horizontal plane, and the pure water supplied to the upper surface of the substrate S does not stay on the substrate S and is tilted. Therefore, the etchant adhering to the surface of the substrate S can be washed away satisfactorily.

The transport roller 41 of the exit conveyor 4 has a rotation axis extending in a horizontal direction perpendicular to the transport direction TD, and supports the substrate S unloaded from the washing tank 3 in the transport direction TD while supporting the substrate S horizontally. Is transported along. Near the entrance of the exit conveyor 4, a pair of air knife devices 42 and 43 for blowing dry air onto the upper and lower surfaces of the substrate S to remove moisture on the surface of the substrate S are arranged. These pair of air knife devices 42 and 43 include:
Dry air sent from an air supply source (not shown) is supplied through an air supply pipe 44 and an air valve 45. The substrate S from which moisture has been removed by passing through the air knife devices 42 and 43 is, as described above,
The transfer roller 41 is removed from the transfer roller 41 by a substrate transfer robot (not shown).

FIG. 2 is a perspective view showing a tilting mechanism for tilting the etching tank 2 and the washing tank 3. The tilt mechanism 7 of the etching tank 2 and the tilt mechanism 8 of the rinsing tank 3 are provided with air cylinders 71 and 81 for generating a driving force for tilting the etching tank 2 and the rinsing tank 3, respectively.

The air cylinders 71 and 81 are respectively mounted on mounting tables 72 and 82 disposed on the bottom surface G of the housing that covers the entire substrate processing apparatus, and are transported in the transport direction T.
It is supported such that it can freely rotate around a horizontal axis along D. The tip of the rod 73 of the air cylinder 71 is connected to the lower surface of the etching tank 2 near one edge 74 along the transport direction TD so as to be rotatable around a horizontal axis along the transport direction TD. In addition, the tip of the rod 83 of the air cylinder 81 is positioned near the one edge 84 along the transport direction TD on the lower surface of the washing tank 3 in the transport direction TD.
Are connected rotatably about a horizontal axis along the axis.

Etching bath 2 and washing bath 3
Are rotatably supported by a horizontal support shaft 91 along the transport direction TD in the vicinity of the edge opposite to the one edge 74, 84 on the lower surface. This support shaft 91
In the state where the rod 73 of the air cylinder 71 and the rod 83 of the air cylinder 81 are completely contracted, the rotation axes of the transport rollers 21 in the etching tank 2 and the transport rollers 31 in the washing tank 3 become horizontal. It is arranged at such a height.

With this configuration, the rod 73 of the air cylinder 71 is extended, and the one end 7
By lifting the side 4, the etching tank 2 can be inclined about the support shaft 91. Further, by extending the rod 83 of the air cylinder 81 and lifting the one end edge 84 side of the washing tank 3,
The washing tank 3 can be inclined about the support shaft 91.

It should be noted that the positional relationship of the transport roller 21 with respect to the etching tank 2 is not changed even if the etching tank 2 is inclined. Similarly, even if the rinsing tank 3 is inclined, the positional relationship of the transport roller 31 with respect to the rinsing tank 3 does not change.

FIG. 3 is a diagram for explaining the tilting operation of the etching tank 2 and the washing tank 3 during the substrate processing. When the substrate S is placed on the entrance conveyor 1, the rod 73 of the air cylinder 71 is contracted, and the etching tank 2 is not inclined. The substrate S on the transport roller 11 of the entrance conveyor 1 is discharged at a high speed toward the etching tank 2 while being horizontally supported by the forward rotation of the transport roller 11 at a relatively high speed.

When the substrate S is carried into the etching processing tank 2, the rod 73 of the air cylinder 71 is extended by a predetermined amount, and the etching processing tank 2 is moved to the first inclined angle (for example, 5 degrees) with respect to the horizontal plane. Degrees). As a result, the transport rollers 2 disposed in the etching tank 2
1 is tilted by the first tilt angle, and the substrate S on the transport roller 21
Is subjected to an etching process by being supplied with an etching liquid while being swung at a relatively low speed while being tilted by the first tilt angle.

When the etching for a predetermined time is completed, the rod 73 of the air cylinder 71 contracts,
The inclination angle of the etching tank 2 is changed from the first inclination angle to a second inclination angle (for example, 10 degrees). afterwards,
The transport roller 21 is driven to rotate forward at a relatively high speed, and the substrate S after the etching process is paid out to the washing tank 3. When the substrate S after the etching processing is paid out, the etching processing tank 3 is returned to a non-inclined state in order to receive a new substrate S to be subjected to the etching processing.

Before the substrate S is discharged from the etching tank 2, the water washing tank 3 is moved to the second position with respect to the horizontal plane.
It is in a state inclined by the inclination angle. The substrate S carried into the rinsing processing tank 3 is swung at a relatively low speed in a state where the rinsing processing tank 3 is tilted by the second tilt angle because the rinsing processing tank 3 is tilted by the second tilt angle. Then, the swinging substrate S
Is supplied with pure water, the etchant adhering to the substrate S is washed away.

When a predetermined time elapses after the supply of pure water to the substrate S is started, the rod 8 of the air cylinder 81
3 is completely contracted, and the washing tank 3 is
One rotation axis is horizontal, that is, not inclined with respect to the horizontal plane. And the transport roller 3
As the substrate 1 is driven to rotate forward at a relatively high speed, the substrate S on the transport roller 31 is discharged at a high speed toward the exit conveyor 4 along a horizontal plane. Substrate S after washing process
Is paid out, the rinsing tank 3 is returned to the state inclined by the second inclination angle in order to receive the substrate S to be subjected to the new rinsing processing.

As described above, according to the present embodiment, the rods 73 and 83 of the air cylinders 71 and 81 connected to the etching tank 2 and the washing tank 3 are expanded and contracted to thereby form the etching tank 2 and the washing tank. With a relatively simple mechanism of changing the inclination angle of the substrate 3, the inclination angle of the substrate S accommodated in the etching processing tank 2 and the washing processing tank 3 can be freely changed within a predetermined angle range. .

Thus, the inclination angle (first inclination angle) of the substrate S during the etching process and the substrate S during the washing process
Even if the inclination angle (second inclination angle) is set to a different angle, when the substrate is transferred from the etching treatment tank 2 to the washing treatment tank 3, the inclination angle of the etching treatment tank 2 and the inclination of the washing treatment tank 3 By matching the angles, it is possible to smoothly transfer the substrate S from the etching processing tank 2 to the washing processing layer 3.

Therefore, the first inclination angle and the second inclination angle can be set to the most suitable angles for the etching process and the water washing process, respectively. That is, the first
The inclination angle is set such that the etching solution does not stay on the upper surface of the substrate S,
In addition, by setting the angle at which the flow rate of the etching solution on the substrate S is not too high, a uniform etching process can be performed on the entire surface of the substrate S. Further, the second inclination angle is set to an angle such that the pure water spouted from the pure water spray nozzles 32 and 33 is satisfactorily supplied to the substrate S, and that the supplied pure water flows as fast as possible. Thereby, the etchant adhering to the surface of the substrate S can be quickly removed.

Further, as a configuration for changing the inclination angle of the substrate S, an air cylinder is provided in the processing chamber, and a rod of the air cylinder is connected to one end of the rotation shaft of the transport roller, thereby forming the transport roller. A configuration in which the rotation axis is inclined can be considered. However, in this configuration, when processing using a chemical such as hydrofluoric acid is performed in the processing chamber, an air cylinder having chemical resistance must be used, which increases the cost of the apparatus. Further, a configuration is conceivable in which an air cylinder is provided outside the processing chamber, and a rod inserted into the processing chamber is connected to a rotating shaft of a transport roller. However, in this configuration, if the gap between the rod and the processing chamber is not tightly sealed, the processing liquid may leak out of the gap.

On the other hand, according to this embodiment, the etching tank 2 and the rinsing processing tank 3 are provided with air cylinders 71 and 81 provided outside.
In addition, since the rinsing tank 3 itself is inclined, it is not necessary to use chemical-resistant air cylinders 71 and 81. In addition, since the etching bath 2 and the rinsing bath 3 do not have a portion through which the rod is inserted, there is no need to seal the rod insertion portion, and the processing liquid leaks from the etching bath 2 and the rinsing bath 3. There is no fear.

Further, in the case where the substrate S which has been subjected to the etching process while being tilted by the first tilt angle is tilted by a second tilt angle different from the first tilt angle, and subjected to the water washing process, for example, the etching process is performed. It is conceivable to provide a mechanism provided with a plurality of transport rollers capable of changing the inclination angle between the tank 2 and the washing tank 3. However, when this configuration is employed, the length of the transport path of the substrate processing apparatus increases, and the area occupied by the substrate processing apparatus increases. On the other hand, according to this embodiment, there is no need to interpose a new mechanism between the etching treatment layer 2 and the washing treatment tank 3, so that the area occupied by the substrate treatment apparatus does not increase.

Although the embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment. For example, in the above-described embodiment, a mechanism for tilting the processing chamber using an air cylinder is described. However, other types of cylinders such as a hydraulic cylinder may be used in addition to the air cylinder. Further, the invention is not limited to the configuration using the cylinder, and a jack mechanism or a ball screw mechanism using a motor may be employed.

In particular, when a ball screw extending substantially vertically below the processing chamber and screwing with a nut attached to the processing chamber is provided, the amount of rotation of the ball screw is changed to change the processing amount. The inclination angle of the chamber can be easily adjusted.

Further, in the above-described embodiment, the case where the present invention is applied to an apparatus for performing an etching process on a substrate is taken as an example, but the process to be performed on the substrate is not limited to the above-described etching process. , A cleaning process of supplying a cleaning liquid to the surface of the substrate to clean the substrate, a developing process of supplying a developer to the surface of the substrate to form a resist pattern, and a stripping solution supplied to the surface of the substrate to remove the resist film Resist stripping process or the like.

Further, in the above embodiment, the mounting tables 72 and 82 are fixed on the bottom surface G of the housing that covers the entire substrate processing apparatus. However, the bottom surface G of the housing exists below the substrate processing apparatus. If not, the mounts 72 and 82 may be directly fixed to the installation surface on which the substrate processing apparatus is installed.

In the above-described embodiment, an apparatus for performing processing on a glass substrate for a liquid crystal display device has been described as an example. However, the present invention relates to a semiconductor wafer, a glass substrate for a plasma display panel, and a photomask. The present invention can also be applied to an apparatus for performing processing on another type of substrate to be processed such as a glass substrate for use.

In addition, various design changes can be made within the scope of the technical matters described in the claims.

[Brief description of the drawings]

FIG. 1 is a simplified cross-sectional view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a perspective view showing a tilting mechanism for tilting an etching tank and a washing tank.

FIG. 3 is a view for explaining an inclination operation of an etching treatment tank and a water washing treatment tank.

[Explanation of symbols]

 S Substrate 2 Etching processing tank (first processing chamber) 21 Conveying roller (first conveying means) 22 Spray nozzle (first processing liquid supply means) 3 Rinse processing tank (second processing chamber) 31 Transfer roller (second conveying means) 32, 33 Pure water spray nozzle 7 Tilt mechanism (first tilt means) 8 Tilt mechanism (second tilt means)

Claims (2)

[Claims] 1. A processing chamber for supplying a processing liquid to a substrate housed therein to perform processing thereon, and a transport unit provided in the processing chamber for transporting the substrate along a predetermined transport direction. And a tilting means provided outside the processing chamber for tilting the processing chamber about an axis substantially parallel to the transport direction. A first processing chamber for receiving and processing the substrate; a first transfer means provided in the first processing chamber for transferring the substrate in a predetermined transfer direction; A first tilting means provided outside the first processing chamber for tilting the first processing chamber about an axis substantially parallel to the transport direction to tilt the substrate in the first processing chamber; A first processing liquid supply unit configured to supply a processing liquid to the substrate in a state where the substrate is tilted at the first tilt angle by the first tilting unit; a first processing liquid supply unit that is provided downstream of the first processing chamber with respect to the transport direction; A second processing chamber for accommodating and processing a substrate carried out of the first processing chamber;
A second transfer means provided in the processing chamber for transferring the substrate in the transfer direction; and a second processing means provided outside the second processing chamber and about an axis substantially parallel to the transfer direction. Second tilt means for tilting the chamber to tilt the substrate in the second processing chamber; and supplying the processing liquid to the substrate in a state where the substrate is tilted at the second tilt angle by the second tilt means. A second processing liquid supply unit; and a first tilt unit and a second processing unit, when the substrate is transferred from the first processing chamber to the second processing chamber.
An angle for operating at least one of the tilting means to match the tilt angle of the substrate when transported by the first transport means with the tilt angle of the substrate when transported by the second transport means. A substrate processing apparatus comprising: adjusting means.