JPH11330927A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH11330927A JPH11330927A JP13801098A JP13801098A JPH11330927A JP H11330927 A JPH11330927 A JP H11330927A JP 13801098 A JP13801098 A JP 13801098A JP 13801098 A JP13801098 A JP 13801098A JP H11330927 A JPH11330927 A JP H11330927A
- Authority
- JP
- Japan
- Prior art keywords
- comparator
- semiconductor device
- reference voltage
- detection
- built
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 238000001514 detection method Methods 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims description 27
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Measurement Of Current Or Voltage (AREA)
- Manipulation Of Pulses (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置に関す
るものであり、特に、パワー素子とコンパレータとを同
一半導体基板に集積化し、例えば、パワー素子に流れる
電流に対して保護機能を有するもので、検出電圧及び基
準電圧は温度変化が大きい基板内部（以下、基板内部の
温度変化を内部変化と呼ぶ）の半導体素子から得、基準
電圧の調整は温度変化が非常に少ない外付け部品（以
下、基板外部の外付け部品周囲の温度変化を外部温度変
化と呼ぶ）により調整可能にした半導体装置におけるコ
ンパレータの内部温度変化に対する出力特性の変動を低
減する回路技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a semiconductor device in which a power element and a comparator are integrated on the same semiconductor substrate, and has, for example, a function of protecting a current flowing through the power element. The detection voltage and the reference voltage are obtained from a semiconductor element inside the substrate having a large temperature change (hereinafter, the temperature change inside the substrate is referred to as an internal change). The present invention relates to a circuit technique for reducing fluctuations in output characteristics of a comparator in a semiconductor device which can be adjusted by a temperature change around an external external component (referred to as an external temperature change).
【０００２】[0002]
【従来の技術】コンパレータは、温度変化に対する出力
特性の変動を抑えるために、検出電圧を得るための素子
（以下、検出素子と略す）と基準電圧を得るための素子
（以下、基準素子と略す）の温度特性を合わせて考慮さ
れる。例えばコンパレータを内蔵する半導体装置では、
検出素子と基準素子を共に半導体基板に内蔵させるこ
と、または共に外付けで対応するのが一般的である。2. Description of the Related Art A comparator is provided with an element for obtaining a detection voltage (hereinafter abbreviated as a detection element) and an element for obtaining a reference voltage (hereinafter abbreviated as a reference element) in order to suppress a change in output characteristics due to a temperature change. ) Is taken into consideration. For example, in a semiconductor device with a built-in comparator,
In general, both the detection element and the reference element are built in the semiconductor substrate, or both are externally provided.
【０００３】前者の半導体基板に内蔵される構成では、
コンパレータの出力特性は温度変化に対し安定するが、
コンパレータの出力特性は固定されるため、使用者がコ
ンパレータの出力特性を自由に設定することはできな
い。後者の共に外付け部品で対応する構成では、使用者
がコンパレータの出力特性を自由に設定することはでき
るが、外部接続端子が１つのコンパレータに対して２端
子増えることになり、半導体装置全体の外部端子数が増
えることになる。そのため、半導体装置の小型化と外部
端子数の減少化を図り、かつコンパレータの出力特性を
自由に設定できるようにするには、コンパレータの基準
電圧を外付け部品により調整可能にする必要がある。In the former configuration built in a semiconductor substrate,
Although the output characteristics of the comparator are stable against temperature changes,
Since the output characteristics of the comparator are fixed, the user cannot freely set the output characteristics of the comparator. In the latter configuration, in which both external components are used, the user can freely set the output characteristics of the comparator, but the number of external connection terminals is increased by two for one comparator, and the overall semiconductor device The number of external terminals increases. Therefore, in order to reduce the size of the semiconductor device and reduce the number of external terminals, and to be able to freely set the output characteristics of the comparator, it is necessary to adjust the reference voltage of the comparator with external components.
【０００４】図３は、従来の半導体装置において、コン
パレータの基準電圧を外付け部品により得る例を示す回
路図であり、１はコンパレータ２と半導体素子である検
出抵抗３とを半導体基板中に内蔵した半導体装置であ
る。４はコンパレータ２の基準電圧のための外部接続端
子、５はコンパレータ２に出力端子である。FIG. 3 is a circuit diagram showing an example in which a reference voltage of a comparator is obtained by external components in a conventional semiconductor device. Reference numeral 1 denotes a comparator 2 and a detection resistor 3 as a semiconductor element built in a semiconductor substrate. Semiconductor device. Reference numeral 4 denotes an external connection terminal for the reference voltage of the comparator 2, and reference numeral 5 denotes an output terminal of the comparator 2.
【０００５】外部接続端子４には定電流源６と基準用外
付け抵抗７が接続されている。コンパレータ２は、定電
流源８，トランジスタ１０およびトランジスタ１１から
なる検出側回路と、定電流源１２，トランジスタ１４お
よびトランジスタ１５からなる基準側回路と、定電流源
１６とによって構成されている。コンパレータ２の基準
電圧は基準外付け抵抗７で発生する電圧であり、コンパ
レータ２の検出電圧は検出抵抗３で発生する電圧であ
る。コンパレータ２の基準端子は、コンパレータ２の出
力特性を基準用外付け抵抗７で発生する基準電圧により
自由に設定するために外部接続端子４となっている。The external connection terminal 4 is connected to a constant current source 6 and an external reference resistor 7. The comparator 2 includes a detection side circuit including a constant current source 8, a transistor 10 and a transistor 11, a reference side circuit including a constant current source 12, a transistor 14 and a transistor 15, and a constant current source 16. The reference voltage of the comparator 2 is a voltage generated by the reference external resistor 7, and the detection voltage of the comparator 2 is a voltage generated by the detection resistor 3. The reference terminal of the comparator 2 is an external connection terminal 4 for freely setting the output characteristics of the comparator 2 with a reference voltage generated by a reference external resistor 7.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、図３の
コンパレータ２を使用したとき、コンパレータ２の基準
電圧は基準用外付け抵抗７で発生する電圧であり、且つ
基準用外付け抵抗７は外付け部品であるため、基準電圧
の外部温度変化に対する変動が小さい。一方、コンパレ
ータ２の検出電圧は検出抵抗３で発生する電圧であり、
且つ検出抵抗３は半導体基板に内蔵されているために、
検出電圧の内部温度変化による変動が大きい。そのため
に、コンパレータ２の基準電圧と検出電圧の温度特性に
ずれが生じ、コンパレータ２の出力特性は温度により変
動する。特に半導体基板にパワー素子が内蔵されている
場合、パワー素子の発熱により、検出抵抗３の温度変化
に対する変動が更に大きくなるため、コンパレータ２の
出力特性は温度により大きく変動することになる。However, when the comparator 2 shown in FIG. 3 is used, the reference voltage of the comparator 2 is the voltage generated by the external reference resistor 7, and the external reference resistor 7 is Since the component is a component, the reference voltage changes little with respect to an external temperature change. On the other hand, the detection voltage of the comparator 2 is a voltage generated by the detection resistor 3,
And since the detection resistor 3 is built in the semiconductor substrate,
The fluctuation of the detection voltage due to the internal temperature change is large. As a result, a difference occurs between the temperature characteristics of the reference voltage and the detection voltage of the comparator 2, and the output characteristics of the comparator 2 fluctuate depending on the temperature. In particular, when the power element is built in the semiconductor substrate, the change in temperature of the detection resistor 3 due to the heat generated by the power element further increases, so that the output characteristic of the comparator 2 largely changes depending on the temperature.
【０００７】本発明は、このように、検出電圧及び基準
電圧を半導体基板内部から得、基準電圧を外付け基準素
子により調整可能にしたコンパレータにおいて、検出電
圧と基準電圧の温度変化によるずれ（内部温度変化と外
部温度変化の差）を低減するようにした半導体装置を提
供することを目的とする。そして、パワー素子がコンパ
レータとともに集積化された内部温度変化の大きい半導
体装置において特に有効とするものである。According to the present invention, as described above, in a comparator in which a detection voltage and a reference voltage are obtained from the inside of a semiconductor substrate and the reference voltage can be adjusted by an external reference element, a deviation due to a temperature change between the detection voltage and the reference voltage (internal It is an object of the present invention to provide a semiconductor device capable of reducing a difference between a temperature change and an external temperature change. The present invention is particularly effective in a semiconductor device in which a power element is integrated together with a comparator and has a large internal temperature change.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明の半導体装置は、基準電圧を基準用内蔵素子
にかかる電圧としてコンパレータに供給するように構成
され、外付け部品により基準用内蔵素子に流れる電流を
調整することで基準電圧を可変となる。また、基準用内
蔵素子と検出素子は同一半導体基板に内蔵され、基準電
圧を調整するための外付け部品へ接続される外部接続端
子を備え、半導体内部の温度依存性の小さい定電圧源は
外部接続端子を通して外付け抵抗に接続されており、そ
れにより調整可能な温度依存性の小さい電流源を構成
し、前記電流を基準用内蔵素子に流すことにより調整可
能な基準電圧を供給できる。そして、内部温度変化によ
る検出電圧と基準電圧の変動を近づけるように検出素子
と基準電圧供給素子を集積化することによりコンパレー
タの検出レベルの温度依存性は低減される。In order to achieve the above object, a semiconductor device according to the present invention is configured to supply a reference voltage to a comparator as a voltage applied to a reference built-in element. The reference voltage can be changed by adjusting the current flowing through the built-in element. The reference built-in element and the detection element are built into the same semiconductor substrate, and have an external connection terminal connected to an external component for adjusting the reference voltage. It is connected to an external resistor through a connection terminal, thereby constituting an adjustable current source having small temperature dependency, and supplying an adjustable reference voltage by flowing the current to the reference built-in element. Then, the temperature dependency of the detection level of the comparator is reduced by integrating the detection element and the reference voltage supply element such that the fluctuation of the detection voltage and the reference voltage due to the change in the internal temperature are brought close to each other.
【０００９】そこで本発明の請求項１記載の発明は、コ
ンパレータと、このコンパレータに検出電圧を供給する
検出素子と、外部接続端子を通して接続される少なくと
も１個の外付け部品により前記コンパレータへの基準電
圧を調整可能な基準電圧供給素子とを半導体基板に集積
化してなる半導体装置であって、前記半導体基板内部の
温度変化による前記基準電圧供給素子内部の基準用内蔵
素子の温度特性と前記検出素子の温度特性とを近づける
ように集積化した構成のものである。Therefore, the invention according to claim 1 of the present invention provides a comparator, a detection element for supplying a detection voltage to the comparator, and at least one external component connected through an external connection terminal. A semiconductor device in which a reference voltage supply element capable of adjusting a voltage is integrated on a semiconductor substrate, wherein a temperature characteristic of a built-in reference element inside the reference voltage supply element due to a temperature change inside the semiconductor substrate and the detection element This is a configuration in which the temperature characteristics are integrated so as to be close to each other.
【００１０】また本発明の請求項２記載の発明は、請求
項１記載の半導体装置において、前記基準用内蔵素子と
前記外付け部品とに流れる電流比が前記半導体基板内部
の温度変化に対して略一定になるように構成したもので
ある。According to a second aspect of the present invention, in the semiconductor device according to the first aspect, a ratio of a current flowing between the reference built-in element and the external component is changed with respect to a temperature change inside the semiconductor substrate. It is configured to be substantially constant.
【００１１】また本発明の請求項３記載の発明は、請求
項２記載の半導体装置において、前記基準電圧供給素子
を、前記基準用内蔵素子と、前記外部接続端子と、この
外部接続端子に接続された定電圧源と、前記外部接続端
子に流れる電流を所定の比で前記基準用内蔵素子に流す
ミラー接続されたトランジスタとによって構成したもの
である。According to a third aspect of the present invention, in the semiconductor device according to the second aspect, the reference voltage supply element is connected to the reference built-in element, the external connection terminal, and the external connection terminal. And a mirror-connected transistor that allows a current flowing through the external connection terminal to flow through the reference built-in element at a predetermined ratio.
【００１２】また本発明の請求項４記載の発明は、請求
項３記載の半導体装置において、ミラー接続されたトラ
ンジスタをＭＯＳＦＥＴによって構成されることを特徴
とするものである。According to a fourth aspect of the present invention, in the semiconductor device according to the third aspect, the mirror-connected transistor is constituted by a MOSFET.
【００１３】また本発明の請求項５記載の発明は、コン
パレータと、このコンパレータに検出電圧を供給する検
出素子と、外部接続端子を通して接続される外付け部品
により前記コンパレータへの基準電圧を調整可能な基準
電圧供給素子とを半導体基板に集積化して、温度変化に
よる前記基準電圧供給素子から出力される前記基準電圧
の変化量を、前記検出素子から出力される前記検出電圧
の変化量に近づけ前記半導体基板と前記外付け部品との
温度変化の差により生じる前記コンパレータの検出レベ
ルの温度依存性を低減することを特徴とするものであ
る。According to a fifth aspect of the present invention, a reference voltage to the comparator can be adjusted by a comparator, a detection element for supplying a detection voltage to the comparator, and an external component connected through an external connection terminal. And a reference voltage supply element integrated on a semiconductor substrate, and the amount of change in the reference voltage output from the reference voltage supply element due to a temperature change is brought close to the amount of change in the detection voltage output from the detection element. A temperature dependency of a detection level of the comparator, which is caused by a difference in a temperature change between the semiconductor substrate and the external component, is reduced.
【００１４】また本発明の請求項６記載の発明は、請求
項５記載の半導体装置において、前記基準電圧供給素子
は基準用内蔵素子を有し、前記半導体基板内部の温度変
化による前記基準用内蔵素子を流れる電流の変化量を、
前記外付け部品の外部の温度変化による電流の変化量に
近づけたものである。言い換えると、温度変化の小さい
基板外部における外部温度変化による基準用内蔵素子に
流れる電流の変化と、温度変化の大きい基板内部の基準
用内蔵素子に流れる電流の変化がほぼ一致するように近
づけたものである。According to a sixth aspect of the present invention, in the semiconductor device according to the fifth aspect, the reference voltage supply element has a reference built-in element, and the reference built-in element due to a temperature change inside the semiconductor substrate. The amount of change in the current flowing through the element
This is close to the amount of change in current due to a change in temperature outside the external component. In other words, the change in the current flowing through the reference built-in element due to an external temperature change outside the substrate where the temperature change is small is close to the change in the current flowing through the reference built-in element inside the substrate where the temperature change is large. It is.
【００１５】また本発明の請求項７記載の発明は、請求
項６記載の半導体装置において、前記基準電圧供給素子
を、前記基準用内蔵素子と、前記外部接続端子に温度依
存性の小さい一定電圧を供給する電圧源と、前記外部接
続端子に流れる電流を所定の比で前記基準用内蔵素子に
流すミラー接続されたトランジスタとによって構成した
ものである。According to a seventh aspect of the present invention, in the semiconductor device according to the sixth aspect, the reference voltage supply element is connected to the reference built-in element and the external connection terminal with a constant voltage having a small temperature dependency. And a mirror-connected transistor that allows a current flowing through the external connection terminal to flow through the reference built-in element at a predetermined ratio.
【００１６】また本発明の請求項８記載の発明は、請求
項４または７記載の半導体装置において、半導体基板に
パワー素子が内蔵されているものである。According to an eighth aspect of the present invention, in the semiconductor device according to the fourth or seventh aspect, a power element is built in the semiconductor substrate.
【００１７】また本発明の請求項９記載の発明は、請求
項８記載の半導体装置において、前記外部接続端子が外
部に露出するように前記半導体基板を樹脂封止したもの
である。According to a ninth aspect of the present invention, in the semiconductor device according to the eighth aspect, the semiconductor substrate is resin-sealed so that the external connection terminals are exposed to the outside.
【００１８】また本発明の請求項１０記載の発明は、請
求項９記載の半導体装置において、基準用内蔵素子と検
出素子との内部温度変化を合わせるために、基準用内蔵
素子と検出素子とを半導体基板内で近づけたものであ
る。According to a tenth aspect of the present invention, in the semiconductor device according to the ninth aspect, the reference built-in element and the detecting element are connected to each other in order to match an internal temperature change between the reference built-in element and the detecting element. It is close in the semiconductor substrate.
【００１９】また本発明の請求項１１記載の発明は、請
求項１０記載の半導体装置において、基準用内蔵素子と
検出素子との温度係数を合わせたものである。According to an eleventh aspect of the present invention, in the semiconductor device of the tenth aspect, the temperature coefficient of the reference built-in element and the temperature coefficient of the detection element are matched.
【００２０】また本発明の請求項１２記載の発明は、請
求項１１記載の半導体装置において、基準用内蔵素子と
検出素子とを同一プロセスの拡散抵抗で構成することに
より温度係数を合わせたものである。According to a twelfth aspect of the present invention, in the semiconductor device according to the eleventh aspect, the reference built-in element and the detection element are formed by a diffusion resistor of the same process so that the temperature coefficient is matched. is there.
【００２１】[0021]
【発明の実施の形態】以下、本発明の実施形態につい
て、図面を参照しながら詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００２２】図１は本発明の第１実施形態の半導体装置
の回路構成を示す回路図であり、２０は半導体装置を示
し、半導体装置２０はコンパレータ２と基準電圧供給素
子２１と検出抵抗３とを半導体基板中に内蔵している。
２１は基準電圧供給素子を示し、基準電圧供給素子２１
は電圧源２３とミラー接続されたトランジスタ２５とト
ランジスタ２７，２８と基準用内蔵抵抗２４と外部接続
端子２２によって構成される。ここで、ミラー接続され
たトランジスタはＭＯＳＦＥＴで構成されたものが特に
有効である。FIG. 1 is a circuit diagram showing a circuit configuration of a semiconductor device according to a first embodiment of the present invention. Reference numeral 20 denotes a semiconductor device, and the semiconductor device 20 includes a comparator 2, a reference voltage supply element 21, a detection resistor 3, Is built into the semiconductor substrate.
Reference numeral 21 denotes a reference voltage supply element.
Is composed of a transistor 25, transistors 27 and 28, a reference built-in resistor 24, and an external connection terminal 22 mirror-connected to a voltage source 23. Here, it is particularly effective that the mirror-connected transistor is constituted by a MOSFET.
【００２３】電圧源２３は、図１に示すように、トラン
ジスタ２９のベースとトランジスタ３０のベースとを接
続し、トランジスタ２９のコレクタとトランジスタ３０
のコレクタとを、直列に接続された抵抗３２，３３を介
して接続し、トランジスタ２９のエミッタを接地し、ト
ランジスタ３０のエミッタに接続した抵抗３４を接地
し、トランジスタ３０のコレクタにトランジスタ３１の
ベースを接続し、トランジスタ３１のエミッタを接地し
た構成であり、基準電圧供給素子２１のトランジスタ２
８のエミッタを抵抗３２と抵抗３３との間に接続し、ト
ランジスタ２８のコレクタにトランジスタ３１のコレク
タを接続している。As shown in FIG. 1, the voltage source 23 connects the base of the transistor 29 to the base of the transistor 30, and the collector of the transistor 29 and the transistor 30
Of the transistor 29 is grounded, the resistor 34 connected to the emitter of the transistor 30 is grounded, and the base of the transistor 31 is connected to the collector of the transistor 30. And the emitter of the transistor 31 is grounded.
The emitter of the transistor 8 is connected between the resistors 32 and 33, and the collector of the transistor 28 is connected to the collector of the transistor 31.
【００２４】また、コンパレータ２の検出電圧は検出抵
抗３の電圧であり、基準電圧は基準用内蔵抵抗２４の電
圧である。また、温度依存性の小さい電圧源２３より供
給される電圧Ｖｂｇはトランジスタ３２，３３を介し、
外部接続端子２２を通って基準電圧調整用外付け抵抗２
６に接続される。The detection voltage of the comparator 2 is the voltage of the detection resistor 3, and the reference voltage is the voltage of the reference built-in resistor 24. Further, the voltage Vbg supplied from the voltage source 23 having a small temperature dependency passes through the transistors 32 and 33,
External resistor 2 for reference voltage adjustment through external connection terminal 22
6 is connected.
【００２５】また、基準電圧調整用外付け抵抗２６は温
度変化の小さい半導体外部にあり、半導体装置が動作し
て温度上昇してもその影響を受けなくなるため、外囲気
温度には依存するが半導体装置の動作による温度変化に
対する温度依存性がほとんどなく、電圧Ｖｂｇにより温
度依存性の小さい電流ＩBが基準電圧調整用外付け抵抗
２６に流れる。また、ミラー接続されたＭＯＳＦＥＴ２
５を介し、基準用内蔵抵抗２４にも電流ＩBに対して温
度依存性の小さい所定比の電流ＩAが流れることにより
基準電圧を供給するため、この基準電圧の温度依存性に
おいては基準用内蔵抵抗２４の温度特性が支配的とな
る。したがって、検出抵抗３と基準用内蔵抵抗２４の温
度特性と基準電圧の温度依存性のずれは低減され、コン
パレータの検出レベルの温度依存性は低減される。The reference voltage adjusting external resistor 26 is located outside the semiconductor with a small temperature change, and is not affected by the temperature rise due to the operation of the semiconductor device. with little temperature dependence to the temperature change due to the operation of the device, a small current I B temperature dependency flows to the reference voltage adjusting external resistor 26 by the voltage Vbg. In addition, the MOSFET 2 which is mirror-connected
5 through, for providing a reference voltage by flowing current I A of the small temperature dependency predetermined ratio with respect to current I B in the reference internal resistor 24, reference in the temperature dependence of the reference voltage The temperature characteristic of the built-in resistor 24 becomes dominant. Accordingly, the difference between the temperature characteristics of the detection resistor 3 and the internal reference resistor 24 and the temperature dependency of the reference voltage is reduced, and the temperature dependency of the detection level of the comparator is reduced.
【００２６】このように第１実施形態の装置によれば、
コンパレータの基準電圧を外付け抵抗で調整でき、半導
体装置の動作による半導体装置内外での温度変化によ
り、半導体装置内の検出素子と外付け抵抗との温度依存
性の違いによるコンパレータの特性変動を防止するため
に、基準電圧調整用外付け抵抗２６に温度依存性の小さ
い電流ＩBが流れるようにして、その電流ＩBと所定比に
なるように基準用内蔵抵抗２４に流れる電流ＩBを構成
することで電流ＩAの温度依存性が小さく（温度依存性
が外付け抵抗２６と同等で小さい）なり、検出素子と基
準用内蔵素子との各々で得られる電圧の各々に温度変化
特性を近づけることができる。As described above, according to the device of the first embodiment,
The reference voltage of the comparator can be adjusted by an external resistor, and the temperature change inside and outside the semiconductor device due to the operation of the semiconductor device prevents the characteristic fluctuation of the comparator due to the difference in the temperature dependency between the detection element in the semiconductor device and the external resistor. to, the reference voltage adjusting external resistor 26 to flow a small current I B temperature dependency, constituting a current I B flowing through the reference internal resistor 24 so that the current I B and a predetermined ratio small temperature dependence of the current I a (small temperature dependency comparable to external resistor 26) will by, close temperature change characteristics to each of the voltage obtained at each of the detection elements and the reference internal element be able to.
【００２７】図２は本発明の第２実施形態の半導体装置
の回路構成を示す回路図であり、３５は、パワー素子１
８と、パワー素子１８の過電流検出用コンパレータとし
て機能するコンパレータ２と、検出抵抗３と、抵抗１９
と、基準電圧供給素子２１を内蔵した半導体装置であ
る。なお、図１に示した第１実施形態における部材と同
一の部材については同一の符号を付すことにより詳細な
説明は省略した。FIG. 2 is a circuit diagram showing a circuit configuration of a semiconductor device according to a second embodiment of the present invention.
8, a comparator 2, which functions as a comparator for detecting an overcurrent of the power element 18, a detection resistor 3, and a resistor 19.
And a semiconductor device incorporating the reference voltage supply element 21. The same members as those in the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
【００２８】コンパレータ２はパワー素子１８の過電流
検出用コンパレータとして動作する。コンパレータ２が
パワー素子１８と集積化されていることを除けば、検出
電圧と基準電圧の温度特性のずれの低減手段としては第
１実施形態と同じである。パワー素子に流れる過電流を
Ｉｏｃ、パワー素子のオン抵抗をＲｏｎ、抵抗１９をＲ
１９、抵抗３をＲ３とする。検出電圧は過電流Ｉｏｃと
パワー素子のオン抵抗Ｒｏｎにより生じる電圧Ｒｏｎ×
Ｉｏｃを抵抗１９と抵抗３により分割した電圧Ｒｏｎ×
Ｉｏｃ×Ｒ３／（Ｒ１９＋Ｒ３）で表せる。このとき検
出電圧の温度依存性はパワー素子のオン抵抗Ｒｏｎの温
度特性が支配的となる。そこで、パワー素子のオン抵抗
Ｒｏｎと基準用内蔵抵抗２４の温度特性を合わせるよう
に同一半導体基板に集積化することにより、コンパレー
タの検出電圧と基準電圧の温度特性ずれは低減され、コ
ンパレータの検出レベルの温度依存性は低減される。The comparator 2 operates as a comparator for detecting an overcurrent of the power element 18. Except that the comparator 2 is integrated with the power element 18, the means for reducing the deviation of the temperature characteristics between the detection voltage and the reference voltage is the same as that of the first embodiment. The overcurrent flowing through the power element is Ioc, the on resistance of the power element is Ron, and the resistance 19 is R
19, the resistor 3 is R3. The detection voltage is a voltage Ron × generated by the overcurrent Ioc and the ON resistance Ron of the power element.
Voltage Ron × obtained by dividing Ioc by resistor 19 and resistor 3
It can be expressed by Ioc × R3 / (R19 + R3). At this time, the temperature dependence of the detection voltage is dominated by the temperature characteristics of the ON resistance Ron of the power element. Therefore, by integrating the on-resistance Ron of the power element and the temperature characteristic of the internal reference resistor 24 on the same semiconductor substrate so that the temperature characteristic deviation between the detection voltage of the comparator and the reference voltage is reduced, the detection level of the comparator is reduced. Is reduced in temperature dependence.
【００２９】[0029]
【発明の効果】以上、説明したように構成された本発明
によれば、コンパレータの出力特性を基準電圧供給素子
側で自由に設定するために、外部接続端子を備えた半導
体装置において、温度依存性の小さい電圧を外部接続端
子を通して外付け抵抗に接続することにより、コンパレ
ータの基準電圧を作り出し、基準用内蔵抵抗と、検出素
子の温度特性を合わせるように同一半導体基板に集積化
することで、検出電圧と基準電圧の温度特性ずれを低減
し、コンパレータの検出レベルの温度依存性を低減する
ことができるという効果が得られる。According to the present invention having the above-described structure, in order to freely set the output characteristics of the comparator on the side of the reference voltage supply element, in the semiconductor device having the external connection terminal, the temperature dependence is reduced. By connecting a voltage with low characteristics to an external resistor through an external connection terminal, a reference voltage for the comparator is created, and integrated on the same semiconductor substrate to match the temperature characteristics of the built-in reference resistor and the detection element. The effect of reducing the temperature characteristic deviation between the detection voltage and the reference voltage and reducing the temperature dependency of the detection level of the comparator can be obtained.
【図１】本発明の第１実施形態の半導体装置の回路構成
を示す回路図FIG. 1 is a circuit diagram showing a circuit configuration of a semiconductor device according to a first embodiment of the present invention;
【図２】本発明の第２実施形態の半導体装置の回路構成
を示す回路図FIG. 2 is a circuit diagram showing a circuit configuration of a semiconductor device according to a second embodiment of the present invention;
【図３】従来の半導体装置において、コンパレータの基
準電圧を外付け部品により得る例を示す回路図FIG. 3 is a circuit diagram showing an example in which a reference voltage of a comparator is obtained by external components in a conventional semiconductor device.
１，２０，３５ 半導体装置 ２ コンパレータ ３ 検出抵抗 ４，２２ 外部接続端子 ５ 出力端子 ６ 定電流源 ７ 基準用外付け抵抗 ８，１２，１６ 定電流源 １０，１１，１４，１５，２５，２７，２８，２９，３
０ トランジスタ １８ パワー素子 １９，３２，３３，３４ 抵抗 ２１ 基準電圧供給素子 ２３ 電圧源 ２４ 基準用内蔵抵抗 ２５ ＭＯＳＦＥＴ ２６ 基準電圧調整用外付け抵抗1, 20, 35 Semiconductor device 2 Comparator 3 Detection resistor 4, 22 External connection terminal 5 Output terminal 6 Constant current source 7 External resistor for reference 8, 12, 16 Constant current source 10, 11, 14, 15, 25, 27 , 28,29,3
0 Transistor 18 Power element 19, 32, 33, 34 Resistance 21 Reference voltage supply element 23 Voltage source 24 Internal resistance for reference 25 MOSFET 26 External resistance for reference voltage adjustment
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１１年６月２５日[Submission date] June 25, 1999
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項１[Correction target item name] Claim 1
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項２[Correction target item name] Claim 2
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【手続補正３】[Procedure amendment 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項３[Correction target item name] Claim 3
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【手続補正４】[Procedure amendment 4]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００１[Correction target item name] 0001
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置に関す
るものであり、特に、パワー素子とコンパレータとを同
一半導体基板に集積化し、例えば、パワー素子に流れる
電流に対して保護機能を有するもので、検出電圧及び基
準電圧は温度変化が大きい基板内部の半導体素子から
得、基準電圧の調整は温度変化が非常に少ない外付け部
品（以下、基板外部の外付け部品周囲の温度変化を外部
温度変化と呼ぶ）により調整可能にした半導体装置にお
けるコンパレータの内部温度変化に対する出力特性の変
動を低減する回路技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a semiconductor device in which a power element and a comparator are integrated on the same semiconductor substrate, and has, for example, a function of protecting a current flowing through the power element. detected voltage and the reference voltage is obtained from the semiconductor device of the temperature change is large substrate portion, the reference voltage external components adjusted temperature change is very small (hereinafter, external temperature changes the temperature change of the external components around the substrate outside The present invention relates to a circuit technique for reducing fluctuations in output characteristics with respect to a change in the internal temperature of a comparator in a semiconductor device which can be adjusted by the above-mentioned method.
【手続補正５】[Procedure amendment 5]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００９[Correction target item name] 0009
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００９】そこで本発明の請求項１記載の発明は、２
つの入力端子を有するコンパレータと、該コンパレータ
の一方の入力端子に結合され前記コンパレータに検出電
圧を供給するための検出素子と、定電圧源およびこの定
電圧源の出力電圧を基準電圧に調整する基準用内蔵素子
を有しかつ前記コンパレータの他方の入力端子に基準電
圧を供給する基準電圧供給素子とを同一の半導体基板上
に形成し、前記基準電圧供給素子に前記半導体基板の外
部から外部抵抗素子を接続する外部接続端子を設け、前
記基準用内蔵素子に前記外部抵抗素子を接続することに
より前記基準電圧を調整して、前記コンパレータの出力
側より出力信号を取り出される半導体装置である。[0009] Therefore the invention according to a first aspect of the present invention, 2
Comparator having two input terminals and the comparator
Is connected to one input terminal of the
Sensing element for supplying voltage, a constant voltage source and this constant
Built-in reference element that adjusts the output voltage of the voltage source to the reference voltage
And a reference voltage is supplied to the other input terminal of the comparator.
On the same semiconductor substrate as the reference voltage supply element that supplies the voltage
And the reference voltage supply element is provided outside the semiconductor substrate.
External connection terminals to connect external resistance elements from the
Connecting the external resistance element to the reference built-in element.
The reference voltage is further adjusted and the output of the comparator is
This is a semiconductor device from which an output signal is taken out from the side .
【手続補正６】[Procedure amendment 6]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１０[Correction target item name] 0010
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００１０】また本発明の請求項２記載の発明は、請求
項１記載の半導体装置において、前記外部接続端子に流
れる電流に対して所定の比の電流を前記基準用内蔵素子
側に流す回路を設けたものである。According to a second aspect of the present invention, in the semiconductor device according to the first aspect , a current flows to the external connection terminal.
The reference built-in element
A circuit that flows to the side is provided .
【手続補正７】[Procedure amendment 7]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１１[Correction target item name] 0011
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００１１】また本発明の請求項３記載の発明は、請求
項２記載の半導体装置において、前記回路をミラー接続
されたトランジスタによって構成したものである。According to a third aspect of the present invention, in the semiconductor device according to the second aspect, the circuit is formed by mirror-connected transistors.
【手続補正８】[Procedure amendment 8]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２４[Correction target item name] 0024
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２４】また、コンパレータ２の一方の入力端子
（トランジスタ１０のベース側）には検出抵抗３に生じ
た検出電圧が印加される。検出電圧は検出抵抗３の電圧
であり、基準電圧は基準用内蔵抵抗２４の電圧である。
この基準電圧はコンパレータ２の他方の入力端子（トラ
ンジスタ１４のベース側）に印加される。また、温度依
存性の小さい電圧源２３より供給される電圧Ｖｂｇはト
ランジスタ２７，２８を介し、外部接続端子２２を通っ
て基準電圧調整用外付け抵抗２６に印加される。 One input terminal of the comparator 2
(On the base side of the transistor 10)
The detected voltage is applied. The detection voltage is the voltage of the detection resistor 3, and the reference voltage is the voltage of the reference built-in resistor 24.
This reference voltage is supplied to the other input terminal (transistor) of the comparator 2.
(The base side of the transistor 14). The voltage Vbg supplied from small temperature dependency voltage source 23 via the transistor 27, is applied through an external connection terminal 22 to the reference voltage adjusting external resistor 26.
【手続補正９】[Procedure amendment 9]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２６[Correction target item name] 0026
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２６】このように第１実施形態の装置によれば、
コンパレータの基準電圧を外付け抵抗で調整でき、半導
体装置の動作による半導体装置内外での温度変化によ
り、半導体装置内の検出素子と外付け抵抗との温度依存
性の違いによるコンパレータの特性変動を防止するため
に、基準電圧調整用外付け抵抗２６に温度依存性の小さ
い電流ＩBが流れるようにして、その電流ＩBと所定比に
なるように基準用内蔵抵抗２４に流れる電流ＩA を構成
することで電流ＩAの温度依存性が小さく（温度依存性
が外付け抵抗２６と同等で小さい）なり、検出素子と基
準用内蔵素子との各々で得られる電圧の各々に温度変化
特性を近づけることができる。なお、コンパレータ２の
出力は出力端子５に取り出される。 As described above, according to the device of the first embodiment,
The reference voltage of the comparator can be adjusted by an external resistor, and the temperature change inside and outside the semiconductor device due to the operation of the semiconductor device prevents the characteristic fluctuation of the comparator due to the difference in the temperature dependency between the detection element in the semiconductor device and the external resistor. to, the reference voltage adjusting external resistor 26 to flow a small current I B temperature dependency, constituting the current I a flowing to the reference internal resistor 24 so that the current I B and a predetermined ratio small temperature dependence of the current I a (small temperature dependency comparable to external resistor 26) will by, close temperature change characteristics to each of the voltage obtained at each of the detection elements and the reference internal element be able to. Note that the comparator 2
The output is taken out to the output terminal 5.
【手続補正１０】[Procedure amendment 10]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２８[Correction target item name] 0028
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２８】コンパレータ２はパワー素子１８の過電流
検出用コンパレータとして動作する。コンパレータ２が
パワー素子１８と集積化されていることを除けば、検出
電圧と基準電圧の温度特性のずれの低減手段としては第
１実施形態と同じである。パワー素子１８に流れる過電
流をＩｏｃ、パワー素子１８のオン抵抗をＲｏｎ、抵抗
１９をＲ１９、抵抗３をＲ３とする。検出電圧は過電流
Ｉｏｃとパワー素子１８のオン抵抗Ｒｏｎにより生じる
電圧Ｒｏｎ×Ｉｏｃを抵抗１９と抵抗３により分割した
電圧Ｒｏｎ×Ｉｏｃ×Ｒ３／（Ｒ１９＋Ｒ３）で表せ
る。このとき検出電圧の温度依存性はパワー素子１８の
オン抵抗Ｒｏｎの温度特性が支配的となる。そこで、パ
ワー素子１８のオン抵抗Ｒｏｎと基準用内蔵抵抗２４の
温度特性を合わせるように同一半導体基板に集積化する
ことにより、コンパレータの検出電圧と基準電圧の温度
特性ずれは低減され、コンパレータの検出レベルの温度
依存性は低減される。なお、コンパレータ２の出力は出
力端子５に取り出され、この出力信号によって、パワー
素子１８が制御される。 The comparator 2 operates as a comparator for detecting an overcurrent of the power element 18. Except that the comparator 2 is integrated with the power element 18, the means for reducing the deviation of the temperature characteristics between the detection voltage and the reference voltage is the same as that of the first embodiment. The overcurrent flowing through the power element 18 is Ioc, the on-resistance of the power element 18 is Ron, the resistance 19 is R19, and the resistance 3 is R3. The detection voltage can be represented by a voltage Ron × Ioc × R3 / (R19 + R3) obtained by dividing the voltage Ron × Ioc generated by the overcurrent Ioc and the ON resistance Ron of the power element 18 by the resistor 19 and the resistor 3. At this time, the temperature dependence of the detection voltage is dominated by the temperature characteristic of the ON resistance Ron of the power element 18 . Then, by integrating the on-resistance Ron of the power element 18 and the temperature characteristics of the reference internal resistor 24 on the same semiconductor substrate so as to match the temperature characteristics, the temperature characteristic deviation between the detection voltage of the comparator and the reference voltage is reduced. The temperature dependence of the level is reduced. The output of comparator 2 is output
Output terminal 5 and the output signal
Element 18 is controlled.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山口 誠毅 大阪府高槻市幸町１番１号 松下電子工業 株式会社内 (72)発明者 森 吉弘 大阪府高槻市幸町１番１号 松下電子工業 株式会社内 (72)発明者 八谷 佳明 大阪府高槻市幸町１番１号 松下電子工業 株式会社内 (72)発明者 十河 誠治 大阪府高槻市幸町１番１号 松下電子工業 株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Seiki Yamaguchi 1-1, Yukicho, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. (72) Inventor Yoshihiro Mori 1-1-1, Yukicho, Takatsuki-shi, Osaka Matsushita Electronics Matsushita Electronics Industrial Co., Ltd. (72) Inventor Yoshiaki Hachiya 1-1, Yukicho, Takatsuki-shi, Osaka Prefecture Matsushita Electronics Corporation (72) Inventor Seiji Togawa 1-1, Yukicho, Takatsuki-shi, Osaka Matsushita Electronics Corporation Inside
Claims (12)
出電圧を供給する検出素子と、外部接続端子を通して接
続される少なくとも１個の外付け部品により前記コンパ
レータへの基準電圧を調整可能な基準電圧供給素子とを
半導体基板に集積化してなる半導体装置であって、前記
半導体基板内部の温度変化による前記基準電圧供給素子
内部の基準用内蔵素子の温度特性と前記検出素子の温度
特性を近づけるように集積化したことを特徴とする半導
体装置。A comparator, a detection element for supplying a detection voltage to the comparator, and a reference voltage supply element capable of adjusting a reference voltage to the comparator by at least one external component connected through an external connection terminal. Is integrated on a semiconductor substrate, and integrated so that the temperature characteristics of the built-in reference element inside the reference voltage supply element and the temperature characteristics of the detection element close to each other due to a temperature change inside the semiconductor substrate. A semiconductor device characterized by the above-mentioned.
に流れる電流比が前記半導体基板内部の温度変化に対し
て略一定になるようにしたことを特徴とする請求項１記
載の半導体装置。2. The semiconductor device according to claim 1, wherein a ratio of a current flowing between the reference built-in element and the external component is made substantially constant with respect to a temperature change inside the semiconductor substrate. .
蔵素子と、前記外部接続端子と、この外部接続端子に接
続された定電圧源と、前記外部接続端子に流れる電流を
所定の比で前記基準用内蔵素子に流すミラー接続された
トランジスタとによって構成したことを特徴とする請求
項２記載の半導体装置。3. A method according to claim 1, wherein the reference voltage supply element comprises a reference internal element, the external connection terminal, a constant voltage source connected to the external connection terminal, and a current flowing through the external connection terminal at a predetermined ratio. 3. The semiconductor device according to claim 2, comprising a mirror-connected transistor flowing through said reference built-in element.
ＯＳＦＥＴによって構成したことを特徴とする請求項３
記載の半導体装置。4. The method according to claim 1, wherein the mirror-connected transistor is M
4. The device according to claim 3, wherein the device comprises an OSFET.
13. The semiconductor device according to claim 1.
出電圧を供給する検出素子と、外部接続端子を通して接
続される外付け部品により前記コンパレータへの基準電
圧を調整可能な基準電圧供給素子とを半導体基板に集積
化して、温度変化による前記基準電圧供給素子から出力
される前記基準電圧の変化量を、前記検出素子から出力
される前記検出電圧の変化量に近づけて前記半導体基板
と前記外付け部品との温度変化の差により生じる前記コ
ンパレータの検出レベルの温度依存性を低減することを
特徴とする半導体装置。5. A semiconductor substrate comprising: a comparator; a detection element for supplying a detection voltage to the comparator; and a reference voltage supply element capable of adjusting a reference voltage to the comparator by an external component connected through an external connection terminal. Integrating, the amount of change in the reference voltage output from the reference voltage supply element due to a temperature change is brought close to the amount of change in the detection voltage output from the detection element, and the semiconductor substrate and the external component A semiconductor device, wherein the temperature dependency of a detection level of the comparator caused by a difference in temperature change is reduced.
を有し、前記半導体基板内部の温度変化による前記基準
用内蔵素子を流れる電流の変化量を、前記外付け部品の
外部の温度変化による電流の変化量に近づけたことを特
徴とする請求項５記載の半導体装置。6. The reference voltage supply element includes a reference built-in element, and a change amount of a current flowing through the reference built-in element due to a temperature change inside the semiconductor substrate is determined by a temperature change outside the external component. 6. The semiconductor device according to claim 5, wherein the amount of change in the current is approximated.
蔵素子と、前記外部接続端子に温度依存性の小さい一定
電圧を供給する電圧源と、前記外部接続端子に流れる電
流を所定の比で前記基準用内蔵素子に流すミラー接続さ
れたトランジスタとによって構成したことを特徴とする
請求項６記載の半導体装置。7. A reference voltage supply element comprising: a reference built-in element; a voltage source for supplying a constant voltage with low temperature dependency to the external connection terminal; and a current flowing through the external connection terminal at a predetermined ratio. 7. The semiconductor device according to claim 6, comprising a mirror-connected transistor flowing to said reference built-in element.
を特徴とする請求項４または７記載の半導体装置。8. The semiconductor device according to claim 4, wherein said semiconductor substrate includes a power element.
に前記半導体基板を樹脂封止したことを特徴とする請求
項８記載の半導体装置。9. The semiconductor device according to claim 8, wherein the semiconductor substrate is resin-sealed so that the external connection terminals are exposed to the outside.
を前記半導体基板内で近づけたことを特徴とする請求項
９記載の半導体装置。10. The semiconductor device according to claim 9, wherein the reference built-in element and the detection element are brought closer within the semiconductor substrate.
の温度係数を合わせたことを特徴とする請求項１０記載
の半導体装置。11. The semiconductor device according to claim 10, wherein the temperature coefficient of the reference built-in element and the temperature coefficient of the detection element are matched.
を同一の拡散抵抗で構成することを特徴とする請求項１
１記載の半導体装置。12. The device according to claim 1, wherein the reference built-in element and the detection element are formed of the same diffusion resistor.
2. The semiconductor device according to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10138010A JP3092062B2 (en) | 1998-05-20 | 1998-05-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10138010A JP3092062B2 (en) | 1998-05-20 | 1998-05-20 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11330927A true JPH11330927A (en) | 1999-11-30 |
| JP3092062B2 JP3092062B2 (en) | 2000-09-25 |
Family
ID=15211958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10138010A Expired - Fee Related JP3092062B2 (en) | 1998-05-20 | 1998-05-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3092062B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012211805A (en) * | 2011-03-31 | 2012-11-01 | Sanken Electric Co Ltd | Current detection circuit |
| JP2013243500A (en) * | 2012-05-18 | 2013-12-05 | Fuji Electric Co Ltd | Input determination circuit |
| CN115372710A (en) * | 2022-10-21 | 2022-11-22 | 西安创联电气科技（集团）有限责任公司 | Automatic resistance testing device |
-
1998
- 1998-05-20 JP JP10138010A patent/JP3092062B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012211805A (en) * | 2011-03-31 | 2012-11-01 | Sanken Electric Co Ltd | Current detection circuit |
| JP2013243500A (en) * | 2012-05-18 | 2013-12-05 | Fuji Electric Co Ltd | Input determination circuit |
| CN115372710A (en) * | 2022-10-21 | 2022-11-22 | 西安创联电气科技（集团）有限责任公司 | Automatic resistance testing device |
| CN115372710B (en) * | 2022-10-21 | 2024-02-06 | 西安创联电气科技（集团）有限责任公司 | Automatic resistor testing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3092062B2 (en) | 2000-09-25 |
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