JPH11297586A - Semiconductor manufacturing apparatus, semiconductor device, and semiconductor device manufacturing method - Google Patents

Abstract

(57) Abstract: A photolithography process for manufacturing a semiconductor device.
Provided is a resist coating method with high uniformity of film thickness. A resist has two nozzles 1 on a substrate 11.
2 and 13, and are applied from respective discharge ports 14 and 15. The resist is applied from one ejection port 14 to almost the center of the substrate 11, and the resist is applied to the other ejection port 15 slightly outside from the center of the substrate 11. As another means, the number of nozzles is one, and this nozzle 22
Are provided with a plurality of discharge ports 23. As still another means, a resist is applied to the substrate 31 from a discharge port 33 through a nozzle 32. Here, the discharge port 33 is connected to the substrate 3
Slightly deviated from the perpendicular to the center of 1. This deviation amount can be adjusted according to the amount of the dropped resist, the viscosity, the exhaust pressure, and the like so that the uniformity of the resist film thickness is optimized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a photolithography process for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In recent years, as the performance of semiconductor devices has become higher and more miniaturized, high uniformity has been required in the thickness of a resist film formed by spin coating in a photolithography process. This is because the variation in the thickness of the resist
This is because the dimensional variation of the resist is directly connected to the dimensional variation of the element as it is, and the electrical characteristics of the product are changed.

FIG. 4 shows a conventional spin coating method for a resist. FIG. 4 is a plan view of a resist application portion. Here, the resist (not shown) is discharged from the discharge port 43 through the nozzle 42 and is applied to the center of the substrate 41. During or after that, when the substrate 41 rotates, the substrate 41 is expanded by centrifugal force and becomes a uniform thin film.

[0004]

However, the conventional spin coating of the resist has a problem that the required uniformity of film thickness in recent years cannot be achieved.

[0005] In response to recent demands for miniaturization, high resolution, and high sensitivity, resists are becoming expensive.
In the conventional method, the amount of resist dropped, that is, the manufacturing cost, cannot be reduced as desired. By forcibly reducing the amount of dripping, unevenness of the resist film and coating,
It will give rise to striations.

Accordingly, an object of the present invention is to solve these problems, and an object of the present invention is to provide a method of manufacturing a semiconductor device which enables highly uniform resist film thickness and resist solution saving.

[0007]

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: applying a resist to a substrate; and rotating the substrate to form the resist film. Wherein the plurality of resist discharge ports are provided.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor device, the method further comprises a step of applying a resist to a substrate and rotating the substrate to form the resist film. The discharge port of the resist is shifted from a perpendicular line at the center of the substrate.

A semiconductor device according to a third aspect of the present invention is characterized in that the method for manufacturing a semiconductor device according to the first or second aspect is provided in a manufacturing process.

According to these inventions, it is possible to form a highly uniform resist film thickness and to save the resist solution. Therefore, there is an effect of providing a semiconductor device having stable electric characteristics and reducing manufacturing costs.

[0011]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 shows an embodiment based on claim 1, and is a plan view of a resist-coated portion. Here, a resist (not shown) is provided on the substrate 11.
Passes through two nozzles 12 and 13 and each discharge port 1
4, 15 applied. The resist is applied from one ejection port 14 to almost the center of the substrate 11, and the resist is applied to the other ejection port 15 slightly outside from the center of the substrate 11. Here, the uniformity of the resist film thickness can be enhanced by optimizing the distance between the center of the substrate 11 and the discharge port 15 in accordance with the amount of the resist dropped, the viscosity, the exhaust pressure, and the like.

(Embodiment 2) FIG. 2 also shows an embodiment based on claim 1, and is a plan view of a resist-coated portion. The difference from FIG. 1 is that there is one nozzle 22 and this nozzle 22 has a plurality of discharge ports 23.
The interval between the plurality of discharge ports 23 can be optimized according to the amount of the resist to be dropped, the viscosity, the exhaust pressure, and the like so that the uniformity of the resist film thickness is best.

(Embodiment 3) FIG. 3 shows an embodiment according to claim 2 and is a plan view of a resist-coated portion. Here, a resist (not shown) is provided on the substrate 31.
Is applied from a discharge port 33 through a nozzle 32. Here, the ejection port 33 is slightly displaced from the perpendicular of the center of the substrate 31. This deviation amount can be adjusted according to the amount of the dropped resist, the viscosity, the exhaust pressure, and the like so that the uniformity of the resist film thickness is optimized.

Here, the number of the discharge ports 14, 15, 23 is as follows.
Instead of two, three or more may be used. Also, discharge port 1
The shapes and sizes of 4, 15, 23 and 33 are not limited. As a result, in each embodiment, the substrate 1
Since the resist is dropped from the centers of 1, 21, and 31 to the outside, the resist film can be formed even with a small amount without causing film unevenness, coating unevenness, and striation.

[0016]

As described above, according to the method of manufacturing a semiconductor device of the present invention, it is possible to form a highly uniform resist film,
In addition, there is an effect that the solution of the resist can be saved.
As a result, there is an effect that a semiconductor device having stable electric characteristics can be provided or manufacturing cost can be reduced.

[Brief description of the drawings]

FIG. 1 is a plan view of a resist-coated portion according to an embodiment of the present invention.

FIG. 2 is a plan view of a resist-coated portion according to the embodiment of the present invention.

FIG. 3 is a plan view of a resist-coated portion according to the embodiment of the present invention.

FIG. 4 is a plan view of a conventional resist coating portion.

[Explanation of symbols]

 11, 21, 31, 41. Substrate 12, 13, 22, 32, 42. Nozzles 14, 15, 23, 33, 43. Discharge port

Claims (3)

[Claims] 1. A method of manufacturing a semiconductor device, comprising: forming a resist film by applying a resist on a substrate and rotating the substrate, wherein a plurality of discharge openings for the resist are provided. A method for manufacturing a semiconductor device. 2. A method for manufacturing a semiconductor device, comprising: forming a resist film by applying a resist to a substrate and rotating the substrate, wherein a discharge port of the resist is displaced from a perpendicular to a center of the substrate. A method for manufacturing a semiconductor device, comprising: 3. A semiconductor manufacturing apparatus for applying a resist to a semiconductor substrate, the apparatus comprising a nozzle for dropping the resist on the semiconductor substrate, wherein a plurality of discharge ports of the nozzle are arranged. Characteristic semiconductor manufacturing equipment.