JPH11274134A - Substrate drying apparatus, and substrate drying method, therefor, and substrate treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate drying apparatus, a substrate drying method therefor a substrate treatment apparatus, which can suppress the generation of particles and dry efficiently, while eliminating the need for annoying operations such as the fine adjustment of the supply amount of solvent. SOLUTION: In multi-functional treatment parts, a flow of pure water DIW to be supplied to a treatment bath 20 is varied, depending on characteristics of a substrate W to be processed (b). Thereafter the substrate W is pulled up out of the pure water DIW in the bath 20 (c) and than dried. For this reason, since the amount of pure water DIW (generally a treatment solution) to be supplied to the bath 20 can be varied according to the characteristics of the substrate W to be processed, particle generation can be suppressed, and adequate drying can be achieved without the need for fine adjustment of the amount of IPA(isopropyl alcohol) vapor or the amount of N2 gas to be supplied.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing liquid stored in a processing tank and a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, or a substrate for an optical disk (hereinafter simply referred to as a "substrate"). The present invention relates to a substrate drying apparatus, a substrate drying method, and a substrate processing apparatus for pulling up and drying a substrate relatively to a processing liquid stored in the processing tank after immersion processing.

[0002]

2. Description of the Related Art Conventionally, in a substrate cleaning / drying apparatus for cleaning and drying a substrate, a processing tank is provided in a processing chamber, pure water is stored in the processing tank, and the substrate is immersed. An atmosphere containing IPA vapor (isopropyl alcohol vapor) is formed in the chamber, and after the immersion processing of the substrate is completed, the substrate is pulled up from the treatment tank into an atmosphere containing IPA vapor, and the pure liquid adhering to the substrate surface is removed. Water is removed by condensing the IPA against it to dry the substrate. The supply of the IPA vapor into the processing chamber is generally performed through an IPA vapor supply nozzle provided at an upper portion of the processing chamber in order to form an atmosphere containing a predetermined concentration of IPA vapor in the processing chamber in a short time.
This is performed by injecting IPA vapor downward using 2 as a carrier gas.

[0003]

By the way, in the above-mentioned conventional substrate cleaning / drying method, the substrate is dried by changing the concentration of the IPA vapor supplied into the processing chamber in various ways according to the characteristics of the substrate to be processed. However, when the concentration of the supplied IPA vapor is increased, a large amount of IPA dissolves in the cleaning solution to generate a large amount of particles,
If the concentration of A-vapor is low, there is a problem that sufficient drying cannot be performed. Therefore, the supply concentration of IPA vapor has to be finely adjusted.

The present invention is intended to overcome the above-mentioned problems in the prior art, and suppresses the generation of particles and performs efficient drying without performing complicated operations such as fine adjustment of the supply amount of the solvent. An object of the present invention is to provide a substrate drying apparatus, a substrate drying method, and a substrate processing apparatus capable of performing the above.

[0005]

In order to achieve the above object, a substrate processing apparatus according to a first aspect of the present invention stores a substrate in a processing tank after immersing the substrate in a processing liquid stored in the processing tank. A substrate drying apparatus for lifting a substrate relative to a processed processing liquid and drying the processing liquid, comprising: a liquid supply means for supplying the processing liquid to the processing tank; and a flow rate of the processing liquid supplied from the liquid supply means to the processing tank. And a control means for controlling the flow rate changing means so as to change the flow rate of the processing liquid before and / or during the relative lifting of the substrate.

According to a second aspect of the present invention, there is provided the substrate drying apparatus according to the first aspect, wherein the change in the flow rate of the processing liquid by the control means is increased.

According to a third aspect of the present invention, there is provided the substrate drying apparatus according to the first aspect, wherein a change in the flow rate of the processing liquid by the control means is reduced.

According to a fourth aspect of the present invention, there is provided a substrate processing apparatus comprising: a substrate processing unit for performing a processing on a substrate with a processing liquid; and a substrate drying apparatus according to any one of the first to third aspects. And a substrate drying unit configured as described above.

According to a fifth aspect of the present invention, in the method for drying a substrate, the substrate is immersed in the processing liquid stored in the processing tank, and then the substrate is relatively moved with respect to the processing liquid stored in the processing tank. A substrate drying method for lifting and drying, wherein a flow rate of a processing liquid supplied to a processing tank is changed before and / or during relative lifting of the substrate.

According to a sixth aspect of the present invention, in the method for drying a substrate according to the fifth aspect, the change in the flow rate of the processing liquid is increased.

Further, a method according to a seventh aspect of the present invention is the substrate drying method according to the fifth aspect, characterized in that the change in the flow rate of the processing liquid is reduced.

[0012]

Embodiments of the present invention will be described below with reference to the drawings.

<1. FIG. 1 is a perspective view showing the structure of a substrate processing apparatus 1 according to an embodiment of the present invention. As shown in the drawing, this apparatus includes a cassette loading section 2 into which a cassette C containing unprocessed substrates is loaded, and a cassette C from the cassette loading section 2 on which a plurality of substrates are simultaneously taken out. A substrate processing unit 5 in which unprocessed substrates taken out of the cassette C are sequentially cleaned, and a substrate storage unit 7 in which a plurality of processed substrates after the cleaning process are simultaneously stored in the cassette. And a cassette unloading section 8 from which the cassette C storing the processed substrates is discharged.
Further, on the front side of the apparatus, a substrate transfer / transportation mechanism 9 is arranged from the substrate unloading section 3 to the substrate storage section 7 so that the substrates before, during and after the cleaning process can be moved from one place. Convey or transfer to another location.

The cassette loading section 2 includes a cassette transfer robot C capable of horizontal movement, vertical movement, and rotation about a vertical axis.
A pair of cassettes C provided at a predetermined position on the cassette stage 2a provided with R1 are transferred to the substrate extracting section 3.

The substrate take-out section 3 includes a pair of holders 3a and 3b which move up and down. A guide groove is formed on the upper surface of each of the holders 3a and 3b, so that the unprocessed substrates in the cassette C can be supported vertically and parallel to each other. Therefore, when the holders 3a and 3b are raised, the substrates are taken out of the cassette C. The substrate taken out of the cassette C is transferred to the transfer robot TR provided in the substrate transfer / transfer mechanism 9, and after horizontal movement, the substrate processing unit 5
It is thrown into.

The substrate processing section 5 has a chemical solution tank C for storing a chemical solution.
B and a washing tank W containing pure water
B and a washing tank 5b (the chemical treating section 5a and the washing section 5b correspond to a "substrate treating section") and a treatment tank 20 for performing various chemical treatments and washing treatments in a single tank. And a multi-function processing unit 5d to be described.

In the substrate processing section 5, a first substrate immersion mechanism 5c is provided behind the chemical processing section 5a and the washing processing section 5b.
The substrate received from the transport robot TR is immersed in the chemical tank CB of the chemical processing section 5a, or is immersed in the washing tank WB of the washing processing section 5b by the lifter head LH1 which can be moved up and down and traversed. Or soak. Further, a lifter 30 (details of the mechanism will be described later) inside the multi-function processing unit 5d is arranged, and a substrate received from the transport robot TR is transferred to the multi-function processing unit 5d by a vertically movable lifter head 32 provided therein. It is supported in the processing tank 20.

The substrate storage unit 7 has the same structure as the substrate unloading unit 3, and receives the processed substrate held by the transport robot TR by a pair of vertically movable holders 7a and 7b and stores it in the cassette C. I do.

The cassette unloading section 8 has the same structure as that of the cassette loading section 2 and includes a movable cassette transfer robot CR2, and a pair of cassettes mounted on the substrate storage section 7 are mounted on a cassette stage. 8a is transferred to a predetermined position.

The substrate transfer / transfer mechanism 9 includes a transfer robot TR that can move horizontally and vertically. Then, a pair of rotatable hands 9 provided on the transport robot TR are provided.
a, 9b, the substrate supported by the holders 3a, 3b of the substrate unloading unit 3 is moved to the substrate processing unit 5.
Transfer to the lifter head LH1 provided in the first substrate immersion mechanism 5c, transfer from the lifter head LH1 to the lifter head 32 provided in the adjacent multifunction processing unit 5d, and store the substrate from the lifter head 32 side. For example, it is transferred to the holders 7a and 7b of the unit 7.

FIG. 2 is a longitudinal sectional view of a multifunctional processing section 5d corresponding to a substrate drying apparatus and a substrate drying section of the present invention.
FIG. 3 is a schematic diagram showing the overall configuration of the multi-function processing unit 5d. First, the multi-function processing unit 5 will be described with reference to FIGS.
The mechanical configuration of d will be described in more detail.

As shown in the figure, the multifunctional processing section 5d mainly includes a chamber 10, a processing tank 20, a lifter 30, a gas supply nozzle 40, a N2 supply source 50, an IPA supply source 60, a DIW
A supply source 70, an HF supply source 80, and a control unit 90 are provided.

The chamber 10 has a processing tank 20 and a gas supply nozzle 40 therein, an openable and closable shutter 11 on its upper surface, and a lifter 30 below its bottom surface. By supplying IPA vapor and / or N2 gas from the supply nozzle 40, an atmosphere containing them can be formed.

The processing tank 20 stores therein a processing liquid such as HF (hydrofluoric acid) supplied from an HF supply source 80 or pure water DIW supplied from a DIW supply source 70, and stores the substrate W in the processing liquid. The treatment can be performed by immersion. Further, a processing liquid collecting groove 21 for collecting the processing liquid overflowing from the processing tank 20 is provided at the upper end of the side surface of the processing tank 20.

The servo motor 3 is provided below the lifter 30.
1 and the lifter head 32
The lifter head 32 is provided with a substrate guide 33 capable of holding many substrates W.

The gas supply nozzle 40 is connected to a pipe P 1 provided horizontally below the upper end of the processing tank 20 on the inner surface of the chamber 10.
A large number of gas supply ports 40a are provided on the upper surface. Then, the N2 gas from the N2 supply source 50 is supplied into the chamber 10 as a carrier gas together with IPA vapor (hereinafter, also referred to as "mixed gas") which is a vapor of the organic solvent from the IPA supply source 60, or N2 gas. Or only supply.

The N2 supply source 50 and the IPA supply source 60 are provided with pipes P2 and P3 in which valves V1 and V2 are interposed, respectively, and they are connected to each other to form a single pipe P4. Gas supply nozzle 4 in 10
Connected to 0.

A pipe P5 is connected to the DIW supply source 70, and a pipe P6 in which a valve V3 is inserted is connected to the HF supply source 80. These pipes are connected to a single pipe P7. Is connected to a processing tank 20 in the chamber 10. In particular, the pipe P5 connected to the DIW supply source 70 includes a cooling unit 75 for cooling the pure water DIW supplied to the processing tank 20, a flow meter FM1 for measuring the flow rate of the processing liquid including the pure water DIW flowing through the pipe P5, and A control valve CV1 as a flow rate changing means for changing the flow rate is inserted. The combination of the DIW supply source 70 and the pipes P5 and P7 or the combination of the HF supply source 80 and the pipes P6 and P7 corresponds to a “liquid supply unit”.

An air pump AP and a pipe P8 in which a valve V4 is interposed are connected to an exhaust line in a facility where the apparatus is installed.
It is connected to the. Further, a pipe P9 having a valve V5 interposed is connected to a drainage line in the facility where the apparatus is installed.
It is connected to the. The pipe P10 connected to the processing liquid recovery groove 21 is branched by a three-way valve V6 into a circulation pipe P11 and a pipe P12 communicating with a drain line. In addition, the circulation pipe P11 has a pump P, a filter F, a flow meter FM2 for measuring the flow rate of the processing liquid such as pure water DIW and HF circulating, and a flow rate changing means similar to the control valve CV1 for changing the flow rate. Valve CV2 is inserted.

Further, the control unit 90 controls the above-described valves V1 to V1.
V5, three-way valve V6, control valves CV1, CV2, flow meter FM
1, FM2, the air pump AP, and the pump P (these connections are not shown).
Opening / closing of V5, switching of three-way valve V6, control valves CV1, CV
The opening degree of V2, the start and stop of the air pump AP, and the start and stop of the pump P are controlled.

FIG. 4 shows a multi-function processing unit 5 according to this embodiment.
It is a mimetic diagram showing the processing procedure of an example of substrate drying processing by d. Hereinafter, a processing procedure of an example of the substrate drying processing by this apparatus will be described with reference to FIG.

It is assumed that HF etching and the like have been completed before the following processing. The following control is performed by the control unit 90.

First, in a state where the processing tank 20 is previously filled with the cooled pure water DIW, the pure water DIW further cooled by the cooling unit 75 is always supplied into the processing tank 20, and the pure water DIW is supplied. From the upper end of the processing tank 20 to the processing liquid collecting groove 21
The cleaning of the substrate W is performed in an overflow state overflowing (FIG. 4A).

At this stage, the N 2 gas is supplied from the gas supply nozzle 40. Further, in this example of the substrate drying process, the pure water DIW collected in the processing liquid collecting groove 21 is discharged to a drain line through a pipe P12.

After the completion of the cleaning process, the processing tank 2
Change the flow rate of pure water DIW supplied to 0 (FIG. 4)
(B)).

At this time, the control valve CV1 is controlled such that the flow rate of the pure water DIW flowing through the pipe P5 becomes a target predetermined flow rate after the change. Specifically, the control unit 90 performs feedback control of the control valve CV1 based on a measurement result signal from the flow meter FM1 to maintain a predetermined flow rate.

At the same time, IPA vapor having a temperature higher than the temperature of the pure water DIW cooled (about room temperature) is supplied from the gas supply nozzle 40 into the chamber 10 (FIG. 4).
(B)). Specifically, the control unit 90 opens the valves V1 and V2 to supply both the N2 gas and the IPA vapor as a mixed gas into the chamber 10 from the gas supply nozzle 40.

Then, the pure water DI stored in the treatment tank 20
By continuing to supply the mixed gas upward from the gas supply nozzle 40 provided below the liquid level of W, N2
Due to the difference in molecular weight between the gas and the IPA vapor, a layer containing a large amount of IPA vapor is gradually formed near the upper part of the processing tank 20 in the chamber 10, and a layer containing a large amount of N2 gas is formed above the layer.

FIG. 5 is a diagram for explaining the flow of pure water DIW in the processing tank 20.

As shown in the drawing, in the processing tank 20, pure water DIW supplied from the processing liquid supply port RO connected to the pipe P7 on the bottom surface of the processing tank 20 is supplied with pure water DIW as indicated by an arrow Ar due to its momentum.
It rises toward the surface, spreads along the surface on the surface of the stored pure water DIW, and most of the water overflows from the upper end of the side surface of the processing tank 20 and reaches the processing liquid collecting groove 21.
Others are obstructed by the processing tank 20 side surface, descend along the processing tank inner side surface, and return to the pure water DIW again.

By the way, from the drying efficiency of the substrate W, pure water DI
It is desirable that the concentration of IPA vapor near the W surface is high, but the concentration of IPA dissolved in the DIW DIW is preferably low in order to suppress the generation of particles. Considering this, the flow rate of the pure water DIW in the processing tank 20 is considered as follows.

That is, when the flow rate of pure water DIW supplied from the bottom side of the processing tank 20 and rising is large, the IPA concentration inside the pure water DIW decreases, but the IPA concentration near the surface of the pure water DIW decreases.
The A vapor dissolves in new pure water DIW on the surface supplied one after another, and overflows from the processing tank 20 with the flow, so that the IP vapor stays near the surface of the processing tank 20.
The concentration of A vapor becomes low.

Conversely, if the rising flow rate of pure water DIW is small, the amount of IPA vapor that is dissolved and discharged on the surface of pure water DIW decreases, and the concentration of IPA vapor near the surface of pure water DIW increases. DI water rising inside
Since the flow rate of W is small, the IPA concentration inside the DIW DIW becomes high.

As described above, the flow rate of the pure water DIW to be supplied into the processing tank 20 cannot be unconditionally increased or decreased. It is desirable to be able to make fine adjustments depending on the shape and the like. Therefore, in this embodiment, the supply amount of pure water DIW is changed immediately before the substrate W is pulled out of the processing tank 20.

More specifically, in the case of a substrate W having both a hydrophilic surface and a hydrophobic surface, particles are likely to be generated by IPA dissolved in pure water DIW, so that particles are suppressed by suppressing the IPA concentration in pure water DIW. This is very important.
For that purpose, it is better that the flow rate of the pure water DIW is large. However, during the cleaning process, pure water DIW is unnecessarily supplied to the treatment tank 2.
0 increases the cost required for pure water DIW. Therefore, pure water DIW is not supplied until the substrate W is pulled out of the processing tank 20.
I want to keep the flow rate of W down. Therefore, in such drying of the substrate W, it is considered desirable to increase the flow rate of the pure water DIW before lifting the substrate W. In fact, when we tried to suppress about several hundred particles on the substrate W where the hydrophilic surface and the hydrophobic surface coexist, if the DIW DIW was not increased, 200 mL or more of IPA vapor was required. On the other hand, the DIW flow rate of pure water was changed from 20 (L / min) to 30
(L / min), 20 mL of IPA vapor
It only took some time.

Conversely, in the case of a substrate W having many irregularities such as fine holes or grooves on the surface or a substrate W having a surface structure having a high aspect ratio, the concentration of IPA vapor near the DIW DIW surface is increased. It is important to perform sufficient drying when the substrate W passes through the substrate. However, if the DIW flow rate is high,
The amount of the purified water DIW in which the IPA vapor is dissolved is increased, or the amount of the purified water DIW is increased by the flow to the processing liquid recovery groove 21 on the surface of the purified water DIW, and the IPA vapor near the surface also flows to the side of the processing tank. IPA
At the time of vapor supply, it is desirable that the flow rate of pure water DIW is small, but until then, a certain amount of pure water DIW flow rate is required to remove particles. for that reason,
In this substrate drying processing example, pure water DI
It is considered desirable to reduce the supply flow rate of W.

As described above, the supply amount of the pure water DIW to the processing tank 20 can be changed according to the substrate W to be processed, so that the supply amount of the IPA vapor and the supply amount of the N 2 gas can be finely adjusted. Even without this, it is possible to suppress the generation of particles according to the characteristics of the substrate to be processed and to perform sufficient drying.

Returning again to the description of the substrate drying process.

Next, the substrate W is pulled up from the pure water DIW and stopped or passed through a layer containing a large amount of IPA vapor, whereby the IPA vapor removes the pure water DIW adhering to the substrate W and removes the substrate W. Dry (Fig. 4
(C)).

During this time, the mixed gas is continuously supplied from the gas supply nozzle 40.

Then, the IPA vapor is further supplied into the chamber 10 to further dry the substrate W and discharge the pure water DIW in the processing tank 20 as necessary (FIG. 4D).

Next, the gas supplied into the chamber 10 is switched to N2 gas (FIG. 4E).

That is, the valve V2 is closed and the valve V1 is closed.
Is left open as it is, so that the gas supply nozzle 40
Then, only the N2 gas is supplied into the chamber 10. This is performed until the atmosphere in the chamber 10 is completely replaced with N2 gas.

Next, the valve V4 is opened to open the air pump AP.
Is started, the atmosphere in the chamber 10 is exhausted, and the substrate W is dried under reduced pressure (FIG. 4F).

Finally, the valve V1 is opened, only the N2 gas is supplied into the chamber 10, the internal pressure is made equal to the external pressure, the shutter 11 is opened to open to the atmosphere, and the substrate W is carried out of the chamber 10. . Then, when there is a substrate W to be processed next, it is lifted by the lifter 30 into the chamber 1.
0, and the same processing as above is repeated. When the above processing is completed for all the substrates W, the processing by this apparatus is completed.

As described above, in this embodiment, since the supply amount of the pure water DIW (generally, the processing liquid) can be changed before and during the lifting of the substrate W from the processing tank 20, the IPA is used. Even without fine adjustment of the supply amount of vapor or N2 gas into the chamber 10, generation of particles can be suppressed and efficient drying can be performed.

Specifically, in the case of a substrate W in which a hydrophilic surface and a hydrophobic surface coexist, the flow rate of pure water DIW (generally, a processing liquid) is increased before and / or during the raising of the substrate W, thereby increasing the flow rate. It is possible to suppress the particles by suppressing the IPA concentration inside the pure water DIW while suppressing the cost required for the pure water DIW, and to efficiently dry the substrate W.

On the other hand, in the case of a substrate W having many irregularities on its surface, pure water D is used before and / or during the lifting of the substrate W.
By reducing the flow rate of the IW (generally, the processing liquid), the generation of particles is suppressed, and the IW near the DIW surface is reduced.
By increasing the concentration of PA vapor, sufficient drying can be performed when the substrate W passes or stops there.

<2. Modification> Although an example of the substrate drying process has been described in the above embodiment, the substrate drying process by the multifunctional processing unit 5d is not limited to this. For example,
The multi-function processing unit 5d includes the DIW supply unit 70 and the chamber 10
Is provided with a control valve CV1 and a flow meter FM1 in addition to the control valve CV1 and the flow meter FM1 in the pipe P5 connecting the control valve CV2 and the flow meter FM2 to the circulation pipe P11. Therefore, first DIW
After the processing tank is filled with pure water DIW from the supply source 70, the supply is stopped, and the pure water DIW overflowing the processing liquid recovery groove 21 is purified by the filter F through the circulation pipe P11 by the pump P and then to the processing tank 20. It can be returned.
In this case as well, by controlling the control valve CV2, the pure water DIW
(Generally, a processing liquid) can be controlled in flow rate. In this case, since the pure water DIW can be reused, the cost of the pure water DIW can be reduced.

In the above-described drying process, the flow rate of the pure water DIW is set to be one stepwise just before the substrate W is lifted. The present invention also includes modifications in which the flow rate is changed and then the substrate W is pulled up, or conversely, the flow rate is changed while the substrate W is pulled up. Further, the temporal change of the flow rate of the pure water DIW (generally, the processing liquid) may be a stepwise change or a continuous change, and the flow rate may be reduced by 1 before or during the lifting of the substrate W. The scope of the present invention includes not only the variation in the degree but also the variation in which the flow rate is increased or decreased stepwise both before and during the withdrawal, and further, is periodically changed in a sinusoidal shape.

In the above-described embodiment, the IPA vapor is supplied into the chamber, and the substrate W is dried by pulling it into the atmosphere. However, other drying methods such as drying under reduced pressure without using the IPA vapor are also used. Modifications in which the flow rate of pure water DIW (generally, processing liquid) is changed by a method are also included in the scope of the present invention. The method, timing, number, and the like of the flow rate of the pure water DIW may be selected according to the characteristics of the substrate W to be processed and the shape of the processing tank.

Further, in the above embodiment, the substrate W is lifted from the processing tank 20 while the pure water DIW in the processing tank 20 is kept as it is.
A modification in which the substrate W is relatively removed from the pure water DIW by discharging the W is also included in the scope of the present invention.

Further, in the above embodiment, the solvent is I
Although PA is used, the present invention is not limited to this, and an organic solvent having a low boiling point such as an alcohol-based or ketone-based solvent may be used.

[0064]

As described above, according to the first to seventh aspects of the present invention, the processing liquid to be supplied to the processing tank before and / or during the relative lifting of the substrate with respect to the processing liquid. Therefore, the generation of particles can be suppressed and efficient drying can be performed without fine adjustment of the supply amount of the solvent vapor.

According to the second and sixth aspects of the present invention, the flow rate of the processing liquid is increased before and / or during the lifting of the substrate, so that, for example, a hydrophilic surface and a hydrophobic surface coexist. Also in the case of drying the substrate, it is possible to perform a drying process in which the generation of particles is suppressed while the consumption of the processing liquid is suppressed.

Further, according to the third and seventh aspects of the present invention, the flow rate of the processing liquid is reduced before and / or during the lifting of the substrate. Even when a substrate having a surface structure with a high ratio is dried, a sufficient drying treatment can be performed while suppressing generation of particles.

[Brief description of the drawings]

FIG. 1 is a perspective view illustrating a configuration of a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a longitudinal sectional view of a multi-function processing unit according to the embodiment.

FIG. 3 is a schematic diagram illustrating an entire configuration of a multi-function processing unit.

FIG. 4 is a schematic diagram illustrating a processing procedure of an example of a substrate drying process performed by a multifunctional processing unit.

FIG. 5 is a diagram for explaining a flow of pure water in a processing tank according to the embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 5a Chemical liquid processing part (substrate processing part) 5b Rinse processing part (substrate processing part) 5d Multifunctional processing part (substrate drying part, substrate drying device) 20 Processing tank 70 DIW supply source 80 HF supply source 90 Control part CV1, CV2 Flow control valve (flow changing means) DIW Pure water FM1, FM2 Flow meter P5 to P7 Piping (liquid supply means together with 70 or 80) W Substrate

Claims (7)

[Claims] 1. A substrate drying apparatus for dipping a substrate in a processing liquid stored in a processing tank and thereafter pulling up the substrate relative to the processing liquid stored in the processing tank and drying the substrate. A liquid supply means for supplying a processing liquid to the tank; a flow rate changing means for changing a flow rate of the processing liquid supplied from the liquid supply means to the processing tank; and Control means for controlling the flow rate changing means so as to change the flow rate of the processing liquid on at least one side. 2. The substrate drying apparatus according to claim 1, wherein a change in the flow rate of the processing liquid by the control unit is increased. 3. The substrate drying apparatus according to claim 1, wherein a change in a flow rate of the processing liquid by the control unit is reduced. 4. A substrate processing unit configured to perform processing on a substrate with a processing liquid, and a substrate drying unit configured by using the substrate drying apparatus according to any one of claims 1 to 3. Substrate processing apparatus. 5. A method for drying a substrate, comprising: immersing a substrate in a processing liquid stored in a processing tank; and then lifting the substrate relative to the processing liquid stored in the processing tank and drying the substrate. A method of drying a substrate, comprising: changing a flow rate of a processing liquid supplied to the processing tank before and / or during the relative lifting. 6. The substrate drying method according to claim 5, wherein the change in the flow rate of the processing liquid is an increase. 7. The method for drying a substrate according to claim 5, wherein the change in the flow rate of the processing liquid is a decrease.