JPH1092797A - Plasma treatment equipment and manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformly distribute active species density to an object to be treated of large area by installing an outer reinforcement part outside an air- tight vessel, connecting a beam structure part to the reinforcement part in the air-tight vessel, and retaining a microwave introducing window. SOLUTION: An outer reinforcement part 40 is installed outside a plasma chamber 2. A microwave resonance end 15 in the chamber 2 is connected and fixed to the reinforcement part 40 via a fastener 41, and the section ratio of a beam part in the chamber 2 is reduced. Thereby active species density, formed by plasma 19, 20 in the chamber 2 can be made uniform to a substrate 5 of large area comparable to a liquid crystal substrate, plasma loss due to metal of the beam part can be reduced drastically and the etching rate or the ashing rate can be greatly improved just under the beam part.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for processing a large object to be processed, such as a liquid crystal substrate or a large-diameter semiconductor wafer, by using active species generated by plasma excitation, and a plasma processing apparatus using the same. The present invention relates to a method for manufacturing a semiconductor device having a processing step for all large-area semiconductor thin films.

[0002]

2. Description of the Related Art As a process plasma apparatus using a microwave, there are an etching apparatus and an ashing apparatus. In order to improve the yield of semiconductor devices, liquid crystal display devices, and the like, this process plasma device is required to have excellent process processing reproducibility.

In such a process plasma apparatus, a medium gas is introduced into an airtight container at a pressure of several to several tens Pa, excited by microwave power and turned into plasma, and active species such as radicals and ions generated by the plasma are generated. Thus, for example, a liquid crystal substrate as a workpiece is etched or ashed.

In this process plasma apparatus, an apparatus for processing a large-diameter workpiece such as a large-diameter semiconductor wafer or a liquid crystal substrate, for example, a 50 cm × 60 cm workpiece on a liquid crystal substrate (array substrate) is used. It is required to obtain a large area and uniform active species density corresponding to the size of the liquid crystal substrate.

[0005] In order to cope with such an increase in the area of the workpiece, there is a process plasma apparatus in which a plurality of plasma generating units are arranged in parallel in an airtight container.

FIG. 52 is a configuration diagram of such a process plasma apparatus.

The hermetic container 1 includes a plasma chamber 2 and a process chamber 3, and a processing stage 4 is provided below the process chamber 3. A workpiece (hereinafter, referred to as a substrate) 5 such as a liquid crystal substrate is placed on the processing stage 4.

The plasma chamber 2 contains CF ₄ , O ₂ , C
intended to encapsulate the medium gas for l ₂ etc., corrosion resistance, to confine microwave plasma chamber 2, for example aluminum from the standpoint of being manufactured at a high electrical conductivity material is required for these medium gas Is often used.

On the side of the plasma chamber 2, gas supply ports 6 and 7 are provided. The gas supply ports 6 and 7 supply a medium gas such as CF ₄ , O ₂ , and Cl _{2 as} a medium gas into the plasma chamber 2.

At the upper part of the plasma chamber 2, two microwave waveguides 8, 9 are provided. These microwave waveguides 8 and 9 guide microwaves oscillated from a microwave oscillator, and have microwave emission ports 10 and 11 formed at their bottoms, respectively.

Microwave introduction windows 12 and 13 are provided on the lower surfaces of the microwave waveguides 8 and 9, respectively. These microwave introduction windows 12 and 13 are formed of a dielectric material such as quartz or alumina ceramic in order to efficiently introduce microwaves into the plasma chamber 2.

The microwave introduction windows 12, 1
3 are arranged and supported in parallel via a beam portion 14.

Here, the beam portion 14 has a reinforcing portion 16 to prevent its own deformation. Also, this beam part 14
, The microwave resonance end 15 is formed.
Hereinafter, the microwave resonance end 15 will be described.

The microwave resonance end 15 is for forming a rectangular cavity 17 having a width a, a length b and a height h on the lower surface of each of the microwave introduction windows 12 and 13 as shown in FIG. It is.

That is, this rectangular parallelepiped cavity resonator 17
The space is formed by the lower surfaces of the microwave introduction windows 12 and 13, the side wall of the microwave resonance end 15, and the side wall of the plasma chamber 2.

The rectangular cavity 17 satisfies the following equation from the width a, the length b, and the height h.

(1 / λ _o ) ² = (m / 2a) ² + (n / 2b) ² + (p / 2h) ² (1) where λ _o is the wavelength of the microwave to be transmitted (2. 45G
Hz, 12.24 cm), and m, n, and l are integers.

The height of the microwave resonance end 15 of the beam portion 14 is determined so as to satisfy b in the above equation (1).
In addition, from the viewpoint of maintaining a stable plasma, usually at least 5
mm is required.

When the cavity resonator is a cylinder, the following equation is satisfied from the radius x and the height t.

(Q / 2t) ² = (1 / λ _o ) ² − (1 / λ _c ) ² (1a) λ _c = 2πx / r (1b) where λ _c is a cutoff wavelength, q, r is an integer.

An exhaust port 18 is provided at a lower portion of the process chamber 3.

With such a configuration, the microwaves propagating in the microwave waveguides 8 and 9 are emitted from the microwave emission ports 10 and 11, respectively, and are passed through the microwave introduction windows 12 and 13 to the plasma chamber. 2 is introduced.

At the same time, CF is supplied through gas supply ports 6 and 7.
₄ , a medium gas such as O ₂ and Cl ₂ is supplied into the plasma chamber 2, so that the medium gas is excited by the microwave to generate plasmas 19 and 20, respectively.

The active species generated by the plasmas 19 and 20 are carried by the gas flow toward the exhaust port 18 to process the substrate 5.

However, in the above-mentioned plasma apparatus, since plasma is not generated on the lower surface of the beam portion 14, the density of the active species is reduced at the center of the plasma chamber 2 corresponding to the position of the beam portion 14 by each microwave introduction window 12. , 13 below the active species density.

For this reason, the processing speed such as the etching rate and the ashing rate of the workpiece 5 is set to a value shown in FIG.
As shown in FIG.

In order to solve this, it is conceivable to reduce the size of the beam portion 14. This is the beam part 14
Of the microwave resonance end 15 and the reinforcing portion 16 in
This is a method of making the reinforcing portion 16 as small as possible.

However, since the inside of the plasma chamber 2 is vacuum, a large force is applied to each of the microwave introduction windows 12 and 13, and this force is supported by the beam portion 14 and the side wall of the plasma chamber 2. The beam portion flexes as shown in FIG.

The force applied to the beam portion 14 is, for example, the size of the microwave introduction window 12 is 50 cm × 20 c.
If m, a pressure of 50 cm × 20 cm × 1 kgf / cm ² = 1000 kgf (2) is applied.

In the two microwave introduction windows 12 and 13,
A pressure of 1000 kgf is applied to the beam portion 14 and the plasma chamber 2.
Therefore, a force of (1000/4) × 2 = 500 kgf is applied to the beam portion 14.

Such bending of the beam portion 14 causes problems such as breakage of the microwave introduction windows 12, 13.

For this reason, it is difficult to reduce the size of the reinforcing portion 16 of the beam portion 14, and the beam portion 14 cannot be reduced in size to a certain size or less, and the etching rate or the ashing rate below the beam portion 14 is improved. It is not possible.

Further, in a manufacturing process of a liquid crystal display panel or the like, it is required to generate a large-area and uniform plasma in accordance with an increase in the size of a liquid crystal substrate. or,
From the process aspect, it is required to use ions, and it is required to lower the plasma source, that is, to lower the operating gas pressure.

[0034] That is, in the manufacturing process of the liquid crystal display panel or the like, Al, ITO, in the etching of such SiO _x, mainly processed using ion for vertical of speed or machining shape of the machining is required You. In this case, it is desired to lower the operating gas pressure in order to eliminate ion extinction due to collision with a neutral gas.

However, when the operating gas pressure in the plasma source is reduced, the density of the neutral gas excited by the microwaves is reduced, so that, for example, when the operating gas pressure is 10 Pa or less, plasma is not generated stably. For this reason,
Although measures such as increasing microwave power were taken, stable plasma could not be obtained because the neutral gas density was as low as 5 Pa or less.

In the process of manufacturing a liquid crystal display panel or the like, for example, 400
It is required to generate uniform plasma over a large area of ² mm2 or more, and it is desired that the plasma generated for uniformity of processing and for high-speed processing be equal to or larger than the size of the processing target. .

From the above, the microwave waveguides 8, 9
Are formed with two microwave emission ports 10 and 11 (slot antennas) for generating a long plasma in parallel at a certain interval.

However, the stability of the plasma discharge varies depending on the ashing and etching process conditions. For example, with respect to ashing, the direction of increasing the interval length between the microwave emission ports 10 and 11 (≧ 40 m
m), the plasma discharge is stabilized, and the spread of the plasma discharge is suppressed to be small in the direction of shortening the interval length. For this reason,
The uniformity of the resist removal on the liquid crystal substrate surface is deteriorated.

On the other hand, regarding etching, CF
₄ , an unstable gas such as Cl ₂ or SF ₆ is used at a flow rate equivalent to that of O ₂ as compared with ashing, so that the discharge is likely to be unstable.
It is necessary to reduce the interval length between 0 and 11 to suppress the spread of plasma and maintain stable plasma discharge.

As described above, each time the process conditions change, the microwave discharge port 1 corresponding to each process condition is changed.
A series of large-scale operations such as opening and attaching the process chamber 3 with slot plates having different interval lengths 0 and 11 and closing the process chamber 3 again are performed.

For this reason, it is necessary to repeat the discharge (empty discharge) until the process gas is adapted to the inside of the process chamber 3 by removing the time required for vacuuming the inside of the process chamber 3 and degassing from the side wall surface of the chamber. While repeating these processes, the degassing chemically reacts with the CF ₄ gas and adheres to the side wall surface of the chamber. Therefore, even if an empty discharge is performed, the adhered substance cannot be removed, and the corrosion of the side wall surface of the chamber due to the adhered substance is accelerated. And the plasma discharge tends to be unstable.

Therefore, it is ideal that the interval length between the microwave emission ports 10 and 11 can be easily changed from outside the process chamber 3 according to both process conditions, for example, between 40 and 50 mm.

FIG. 55 is a block diagram of another process plasma apparatus, and FIG. 56 is a block diagram of the apparatus as viewed from above.

A processing stage 21 is provided below the airtight container 20.
Is provided. The substrate 5 such as a liquid crystal substrate is mounted on the processing stage 21.

The shape, size, and the like of the hermetic container 20 are designed so that the substrate 5 can be sufficiently accommodated and the microwaves can be uniformly and efficiently incident inside.

Further, two microwave waveguides 22 and 23 are provided above the airtight container 20. These microwave waveguides 22 and 23 guide microwaves oscillated from microwave oscillators 24 and 25, respectively, and have microwave emission ports 26 and 27 formed at their bottoms, respectively.

Microwave introduction windows 28 and 29 are provided on the lower surfaces of these microwave waveguides 22 and 23, respectively. The microwave introduction windows 28 and 29 are formed of a dielectric material such as quartz or alumina ceramic in order to efficiently introduce microwaves into the hermetic container 20 as described above. In addition, these microwave introduction windows 28,
29 is supported by the beam portion 30.

A plurality of jet nozzles 3 are provided on the lower surfaces of the microwave introduction windows 28 and 29, that is, on the inner side of the hermetic container 20, and on the inner wall and the beam portion 30 of the hermetic container 20, respectively.
1a, 31b and 32a, 32b are provided.

That is, a plurality of ejection nozzles 31a and 31b are arranged on the lower surface side of one microwave introduction window 28 to face each other, and a plurality of ejection nozzles 32a and 32b are arranged on the lower surface side of the other microwave introduction window 29. Are arranged to face each other.

The jet nozzles 31a, 31b and 32
Reference numerals a and 32b denote medium gases such as CF ₄ , O ₂ , and Cl ₂ which are jetted into the hermetic container 20.

Note that two gas exhaust systems 33a and 33b are connected to the lower part of the airtight container 20.

With such a configuration, the microwaves oscillated from the microwave oscillators 24 and 25 and propagated in the microwave waveguides 22 and 23 are emitted from the microwave emission ports 26 and 27, respectively. , Are introduced into the airtight container 20 through the microwave introduction windows 28 and 29.

At the same time, a medium gas such as CF ₄ , O ₂ , Cl ₂ is supplied to each of the ejection nozzles 31a, 31b and 32a, 32.
b and are supplied into the airtight container 20.

In this case, the ejection nozzles 3 facing each other
The medium gas ejected from each of 1a and 31b flows along the gas flow shown by the arrow (a), and the microwave introduction window 2
8, each of the ejection nozzles 3 facing downward and facing each other.
The medium gas ejected from each of the microwave introduction windows 2a and 32b flows along the gas flow shown by the arrow (b) and
Go down below 9.

Since the medium gas is supplied into the hermetic container 20 in this manner, the medium gas is excited by the microwave, and plasma is generated below each of the microwave introduction windows 28 and 29.

The active species generated by these plasmas are carried by the gas flows toward the gas exhaust systems 33a and 33b, and process the substrate 5.

However, in the above apparatus, the microwave introduction windows 28 and 29 having small dimensions are combined in order to process a large area substrate 5 such as a liquid crystal substrate.
In such a configuration, the beam portion 30 is provided between the microwave introduction windows 28 and 29, and the ejection nozzles 31a and 31
b and 32a, 32b are connected to the respective microwave introduction windows 28, 29.
Are arranged to face each other on the lower surface of.

For this reason, the flow of the medium gas falls below the microwave introduction windows 28 and 29, and the beam portion 30
It will be difficult to flow directly under. As a result, the active species density immediately below the beam portion 30 decreases, and as shown in FIG. 57, the etching rate below the beam portion 30 decreases, and the processing speed decreases.

When there are a plurality of active species used in the process, each of the ejection nozzles 31a, 31b and 32a,
32b, a different medium gas is ejected. In this case, the processing object 5 is easily damaged by electrostatic discharge over the entire surface of the processing object 5 having a large area, and the nonuniformity of the etching rate is reduced by ± 10%.
Even if it is desired to keep the content within this range, it is difficult to make various active species uniform.

On the other hand, FIG.
As shown in FIG. 3, a punching plate 34 for shielding microwaves from the plasma chamber 2 is provided. The punching plate 34 is fixed to the punching plate 34 by a holder 35.

When generating plasma in such a configuration, the plasma chamber 2 is supplied with energy on the order of kw from a microwave generation source. This energy generates plasmas 19 and 20 and heats the medium gas.

Then, by the heated medium gas,
The punching plate 34 is heated by the radiation heat from the plasmas 19 and 20. As a result, the punching plate 34 is thermally deformed due to heating, for example, as shown in FIG.

Since the shape and dimensions of the plasma chamber 2 change with the thermal deformation of the punching plate 34,
The stability of discharge and the spread of discharge change. As a result, the uniformity of the active species density is reduced, and the processing speed for the substrate 5 is reduced.

For this reason, the in-plane distribution of the processing amount for a certain period of time increases with the deformation of the punching plate 34, and increases with the operation time of the process plasma as shown in FIG. 60, so that the processing is not performed constantly.

Further, the yield of semiconductor devices and liquid crystal display devices deteriorates due to changes in the amount of in-plane processing.
In order to solve this problem, a method of deforming the punching plate 34 in advance by embossing has been adopted. However, the processing cost of the punching plate 34 increases.

On the other hand, the microwave is introduced into the microwave introduction window 2.
In the case where the microwaves are emitted from the process chambers 8 and 29 into the process chamber 3, the phase of the microwaves emitted to the discharge part of the process chamber 3 is changed so that the microwave energy emitted into the process chamber 3 is efficiently absorbed by the plasma. The adjustment is performed using a tuner (microwave phase adjustment mechanism). The shape, size, and the like of the process chamber 3 are designed so that microwaves radiated from the microwave waveguides 8 and 9 can efficiently enter the process chamber 3.

However, in the processing of the plasma apparatus using the microwave phase adjusting mechanism, usually, several tens of workpieces 5 are continuously processed. In this case, in the processing of the individual workpieces, the temperature of the gas chamber wall in the process chamber 3 is considerably different between the first workpiece 5 and the latter workpiece 5.

For this reason, at the start of the operation, that is, in the case of the gas chamber shape adjusted so that the optimum operation can be performed at room temperature, the shape is deviated from the optimum shape in the latter half of the operation, resulting in unstable operation or processing. May be reduced in uniformity.

When the type of the workpiece 5 is changed, it is necessary to use a punching plate 34 having a shape and an opening ratio suitable for each process condition. In such a case, it is necessary to use a punching plate 34 suitable for the process. The punching plate 34 has been replaced.

As described above, the process manufacturing method using each of the process plasma apparatuses described above can be applied to a thin film transistor,
When manufacturing a semiconductor device such as an SRAM or a DRAM, for example, when etching a metal film, a required shape is etched by etching on a metal film 37 formed on a Si substrate 36 as shown in FIG. A resist 38 to be obtained is patterned.

The metal film 37 is formed by the progress of the etching process.
Is etched as shown in FIG. 4B, and is finally processed so that its cross-sectional shape becomes trapezoidal as shown in FIG.

The trapezoidal shape of the metal film 37 is as follows.
In the etching process, not only the metal film 37 but also the resist 38 are simultaneously etched.

Therefore, in such process manufacturing, it is general to use two types of gases, a medium gas (etchant source) for etching the metal film 37 and a medium gas (ashing source) for etching the resist 38. It is a target.

Incidentally, a halogen-based gas such as CF ₄ gas is usually used as an etching source, and an O ₂ gas (hereinafter referred to as oxygen gas) is usually used as an ashing source.

However, in the case where a large-area workpiece 5 such as a liquid crystal substrate is etched by each of the above-mentioned process plasma apparatuses, it is necessary to perform etching on the surface to be processed as described above.
Since the ratio of the density of the active species is not uniform, the shape of the metal film 37 obtained by etching may vary in a plane.

For example, the metal film 37 is processed into a trapezoidal shape. However, since the plasma density is not uniform between the peripheral portion and the central portion in the hermetic container, as shown in FIG. The inclination gradient of the surface, that is, the taper angle is different between the peripheral part and the central part in the airtight container.

In the case of this example, the taper angle of the metal film 37 in the peripheral portion in the hermetic container is processed to be larger than the taper angle of the metal film 37 in the central portion in the hermetic container.

[0078]

As described above, the beam portion 1
Since no plasma is generated on the lower surface of the beam part 4,
In the central part of the plasma chamber 2 corresponding to the position 4,
The active species density becomes low and the active species density cannot be made uniform.

For this reason, a method of reducing the size of the beam portion 14 is conceivable. However, since the beam portion 14 is bent, the size cannot be reduced to a certain size or less.

Further, when the operating gas pressure in the plasma source is reduced, the density of the neutral gas excited by the microwave decreases, and the plasma is not generated stably.

In addition, a series of large-scale operations such as opening and attaching the process chamber 3 to slot plates having different spacing lengths of the microwave emission ports 10 and 11 corresponding to each process condition and closing the process chamber 3 again must be performed. Must.

On the other hand, each of the ejection nozzles 31a, 31b and 3
It becomes difficult for the medium gas ejected from 2a and 32b to flow immediately below the beam portion 30, and the density of the active species below the beam portion 30 becomes low, so that a uniform active species density cannot be obtained.

On the other hand, due to the thermal deformation of the punching plate 34, the discharge becomes unstable or the spread of the discharge changes, so that a uniform active species density cannot be obtained.

When the workpiece 5 is continuously processed,
In the first processed object 5 and the latter processed object 5,
The temperature of the gas chamber wall in the process chamber 3 and the like are considerably different, and the shape is deviated from the optimum shape in the latter half of the operation, and the operation may become unstable or the uniformity of processing may be reduced.

When the type of the workpiece 5 is to be changed, it is necessary to use a punching plate 34 having a shape and an aperture ratio suited to each process condition. ing.

On the other hand, when a plurality of types of medium gases are used at the time of etching, since the active species density ratio is not uniform between the peripheral portion and the central portion in the hermetic container 27, for example, the metal film 37 is trapezoidal. The taper angle to be processed differs between the peripheral portion and the central portion of the substrate 51.

Accordingly, it is an object of the present invention to provide a plasma processing apparatus capable of uniformly distributing the active species density over a large-area workpiece.

Another object of the present invention is to provide a plasma processing apparatus capable of improving the beam portion and uniformly distributing the active species density.

Another object of the present invention is to provide a plasma processing apparatus capable of maintaining stable plasma even when the operating gas pressure in a plasma source is reduced.

Further, according to the present invention, the length of the interval between the microwave emission ports can be arbitrarily changed from the outside of the process chamber, a stable plasma discharge can be performed according to each process condition, and a large area and a high quality can be obtained for a long time. It is an object of the present invention to provide a plasma processing apparatus capable of obtaining the processing characteristics described above.

Another object of the present invention is to provide a plasma processing apparatus capable of uniformly distributing the active species density by appropriately arranging the ejection nozzles.

Another object of the present invention is to provide a plasma processing apparatus capable of uniformly distributing the active species density and performing necessary processing on a workpiece.

Another object of the present invention is to provide a plasma processing apparatus capable of uniformly distributing the active species density without being affected by the thermal deformation of the punching plate.

Another object of the present invention is to provide a plasma processing apparatus capable of adjusting the shape of a punching plate to obtain stable operation characteristics.

Another object of the present invention is to provide a method of manufacturing a semiconductor device which can obtain a uniform active species density and can be processed to a required taper angle.

Another object of the present invention is to provide a method of manufacturing a semiconductor device which can be processed into a semiconductor layer having a required taper angle by controlling a medium gas while obtaining a uniform active species density.

[0097]

According to the present invention, a medium gas is supplied into an airtight container, and a microwave is introduced from a plurality of microwave introduction portions into the airtight container to generate plasma. In the plasma processing apparatus for processing an object to be processed in the hermetic container with the activated species generated by the method, an external reinforcing portion provided outside the hermetic container, and a myloc wave connected to the external reinforcing portion in the hermetic container. And a beam structure for supporting the microwave introduction window constituting the introduction unit.

In such a plasma processing apparatus, the active species generated by the plasma are uniformly spread in the hermetic container by the miniaturized beam structure in the hermetic container. Thereby, corrosion resistance and uniformity can be improved.

According to the second aspect, a medium gas is supplied into the hermetic container, and a microwave is introduced from the microwave introduction portion into the hermetic container to generate plasma, and the active species generated by the plasma generate airtightness. A plasma processing apparatus for processing an object to be processed in a container, wherein a magnetic field generating means for applying a magnetic field to plasma is provided near a microwave introduction unit.

In such a plasma processing apparatus, when a magnetic field is applied to the plasma generated in the hermetic container, the electrons of the plasma perform cyclotonic motion, and the collision with neutral particles increases to increase the activation. Seeds are generated and a stable plasma is maintained even in low pressure gas.

According to the third aspect, a medium gas is supplied into the hermetic container, and a microwave is introduced into the hermetic container from a plurality of microwave introduction portions to generate plasma, and the active species generated by the plasma are generated. In a plasma processing apparatus for processing an object to be processed in an airtight container, an external reinforcing portion provided outside the airtight container and a microwave connected to the external reinforcing portion to constitute a microwave introduction portion in the airtight container A plasma processing apparatus comprising: a beam structure supporting a wave introduction window; and a magnetic field generating unit provided in the beam structure and applying a magnetic field to the plasma.

In such a plasma processing apparatus, active species generated by plasma are uniformly spread in the hermetic container by the beam structure having a reduced size in the hermetic container. As a result, the corrosion resistance and uniformity are improved, and a magnetic field is applied to the plasma generated in the hermetic container, so that the electrons of the plasma perform cyclotonic motion and the collision with neutral particles increases to activate the plasma. Seeds are generated and a stable plasma is maintained even in low pressure gas.

According to the fourth aspect, a medium gas is supplied into the airtight container, and a microwave is introduced into the airtight container through the microwave introduction window from the microwave introduction pipe to generate plasma, and the plasma generated by the plasma is generated. A plasma processing apparatus for processing an object to be processed in an airtight container with activated species, a magnetic field generating means provided near a microwave introduction window for applying a magnetic field to plasma, and a microwave introduction window in a microwave introduction pipe. The plasma processing apparatus includes at least two microwave emission ports formed at a portion connected to the microwave oven and configured such that the interval length between them is variable.

In such a plasma processing apparatus, a magnetic field is applied to the plasma generated in the hermetic container, so that the electrons of the plasma perform cycloton motion, and the collision with the neutral particles increases, whereby the active species is generated. The generated and stable plasma is maintained even in the low-pressure gas, and the interval length between the two microwave emission ports is changed according to the process, so that the process discharge state that is stable for a long time is maintained in each process.

According to a fifth aspect of the present invention, in the plasma processing apparatus according to the first aspect, the external reinforcing portion has a longitudinal elastic modulus of 8.
It is formed of a material of 0 × 10 ³ kg / mm ² or more. Thereby, rigidity can be improved.

According to the sixth aspect, in the plasma processing apparatus according to the first aspect, the external reinforcing portion is formed of stainless steel or iron. Thereby, rigidity can be improved.

According to a seventh aspect of the present invention, in the plasma processing apparatus according to the first aspect, the thickness of the beam structure in the microwave introduction direction is t, and the pitch of the microwave introduction part is d. It is configured to satisfy the relationship of t ≧ 10. Thereby, the uniformity can be improved.

According to an eighth aspect of the present invention, in the plasma processing apparatus according to the first aspect, the beam structure section has a pitch d of the microwave introduction section and a width of the beam introduction section in the pitch direction of the microwave introduction section. Assuming that g, d / g ≧ 3. Thereby, the uniformity can be improved.

According to a ninth aspect of the present invention, in the plasma processing apparatus according to the first aspect, the thickness of the beam structure in the microwave introduction direction is t, and the direction of the microwave introduction from the microwave introduction portion to the object to be processed is t. Is defined as f, the relationship f / d ≧ 3 is satisfied. Thereby, the uniformity can be improved.

According to claim 10, claim 2, 3, or 4
In the above described plasma processing apparatus, the magnetic field generating means is provided along the longitudinal direction of at least two microwave emission ports formed in the microwave introduction part.

According to claim 11, claim 2, 3 or 4
In the above-described plasma processing apparatus, the magnetic field generating means is provided in any of the inside of the airtight container, the inside of the beam structure, and the outside of the airtight container.

According to the twelfth aspect, in the plasma processing apparatus according to the seventh aspect, the interval length between at least two microwave emission ports is made variable according to the process conditions in the hermetic container.

According to the thirteenth aspect, the medium gas is supplied into the airtight container, and the microwave is introduced into the airtight container so that at least 2
In a plasma processing apparatus that generates plasma in two plasma generating units and processes an object to be processed in an airtight container with active species generated by these plasmas, the plasma processing apparatus is disposed at least in an airtight container, and is disposed at a central portion in the airtight container. And a plurality of ejection nozzles for ejecting a medium gas toward the plasma processing apparatus.

In such a plasma processing apparatus, since the medium gas ejected from each of the plurality of ejection nozzles flows toward the central portion in the hermetic container, the active species density in the hermetic container becomes uniform.

According to the fourteenth aspect, in the plasma processing apparatus according to the thirteenth aspect, the plurality of ejection nozzles are arranged on both sides of the hermetic container via the plurality of plasma generating portions.

In such a plasma processing apparatus, since the medium gas ejected from each ejection nozzle on both sides flows toward the center of the hermetic container, the active species density in the hermetic container becomes uniform. .

According to a fifteenth aspect, in the plasma processing apparatus according to the thirteenth aspect, an ejection nozzle group including a plurality of ejection nozzles arranged to face each other with both side beam structures in the airtight container is formed. A plurality of these ejection nozzle groups are arranged in the airtight container.

With such a plasma processing apparatus, the medium gas ejected from each of the plural sets of ejection nozzle groups flows toward the central portion in the hermetic container, so that the active species density in the hermetic container becomes uniform. .

According to a sixteenth aspect, in the plasma processing apparatus according to the thirteenth aspect, the plurality of ejection nozzles are provided in the first ejection nozzle group opposed to each other on both sides of the airtight container, and in the beam structure. A second ejection nozzle group disposed therein, wherein the ejection amount of the medium gas from the second ejection nozzle group is set to be smaller than the ejection amount of the medium gas from the second ejection nozzle group.

With such a plasma processing apparatus, the medium gas is ejected from the first ejection nozzle group on both sides of the airtight container toward the center of the airtight container, and the ejection nozzles on both sides of the airtight container are ejected. The medium gas is ejected from the second ejection nozzle group at the center with an ejection amount smaller than the amount, and the active species density in the airtight container is made uniform.

According to a seventeenth aspect, in the plasma processing apparatus according to the thirteenth aspect, the plurality of ejection nozzles are provided in the first ejection nozzle group disposed opposite to each other on both sides of the airtight container, and in the beam structure. A second ejection nozzle group arranged, and the ejection nozzle diameter of the second ejection nozzle group is set smaller than the ejection nozzle diameter of the second ejection nozzle group.

With such a plasma processing apparatus, the medium gas is ejected from the first ejection nozzle group on both sides of the airtight container toward the center of the airtight container, and the ejection nozzles on both sides of the airtight container are ejected. No. 2 with smaller nozzle diameter than
The medium gas is jetted from the jet nozzle group with a small jetting amount to make the active species density in the airtight container uniform.

According to the eighteenth aspect, in the plasma processing apparatus according to the thirteenth aspect, the plurality of ejection nozzles are provided in the first ejection nozzle group arranged on both sides of the hermetic container and in the beam structure. A second ejection nozzle group arranged, and the number of ejection nozzles of the second ejection nozzle group is set smaller than the number of ejection nozzles of the second ejection nozzle group.

With such a plasma processing apparatus, the medium gas is ejected from the first ejection nozzle group on both sides of the airtight container toward the center of the airtight container, and the ejection nozzles on both sides of the airtight container are ejected. Medium gas is ejected from the second ejection nozzle group in the central portion, which has a smaller number of ejections, to eject the medium gas, thereby making the active species density in the airtight container uniform.

According to the nineteenth aspect, a medium gas is supplied into the hermetic container, and microwaves are introduced into the hermetic container from a plurality of microwave introduction portions to generate plasma, and active species generated by the plasma are generated. In a plasma processing apparatus that processes an object to be processed in an airtight container, a plurality of ejection nozzles that are disposed at least in the airtight container and that eject medium gas toward a central portion in the airtight container,
The plasma processing apparatus includes a gas suction port that is disposed at a central portion on the processing object side in the airtight container and suctions gas in the airtight container.

In such a plasma processing apparatus, the medium gas is ejected from the plurality of ejection nozzles toward the central portion in the hermetic container, and simultaneously, the gas suction port at the central portion in the hermetic container is connected to the inside of the hermetic container. And the active species density in the airtight container is made uniform.

According to the twentieth aspect, a medium gas is supplied into the hermetic container, and a microwave is introduced into the hermetic container from a plurality of microwave introduction portions to generate plasma, and active species generated by the plasma are generated. In a plasma processing apparatus that processes an object to be processed in an airtight container, a plurality of ejection nozzles that are disposed at least in the airtight container and that eject medium gas toward a central portion in the airtight container,
And a control means for controlling the ejection amount of these ejection nozzles.

With such a plasma processing apparatus, the amount of the medium gas ejected from the plurality of ejection nozzles toward the center of the hermetic container is controlled, and necessary processing is performed on the workpiece.

According to a twenty-first aspect, in the plasma processing apparatus according to the twentieth aspect, the control means is configured to determine a predetermined one of the medium gases ejected from the plurality of ejection nozzles near an end point of the processing of the object to be processed. With such a plasma processing apparatus having the function of increasing the flow rate of the medium gas, the required processing is performed on the workpiece by increasing the flow rate of the predetermined medium gas and changing the processing amount by the medium gas. .

According to the twenty-second aspect, in the plasma processing apparatus according to the twentieth aspect, the control means may include, among the halogen-based gas and the oxygen gas ejected from the plurality of ejection nozzles, an oxygen gas near an end point of the process. It has the function of increasing the proportion of gas.

With such a plasma processing apparatus, the workpiece can be processed to have a uniform taper angle by increasing the ratio of the oxygen gas.

According to the twenty-third aspect, a medium gas is supplied into the hermetic container, and microwaves are introduced into the hermetic container from a plurality of microwave introduction portions to generate plasma, and the active species generated by the plasma are generated. In a plasma processing apparatus that processes an object by guiding the object through a punching plate that shields microwaves, the punching plate is formed so as to have a convex shape in a direction from the microwave introduction unit to the object. This is a curved plasma processing apparatus.

In such a plasma processing apparatus, since the punching plate is curved to a predetermined radius of curvature, even if the punching plate is heated during the plasma processing, the plate does not deform into a lantern and has a predetermined radius of curvature. Since it is deformed while maintaining,
The plasma distribution in the hermetic container is maintained in a uniform state.

According to the twenty-fourth aspect, in the plasma processing apparatus according to the twenty-third aspect, the punching plate is held by the curved surface holder so as to have a predetermined radius of curvature.

According to a twenty-fifth aspect, in the plasma processing apparatus according to the twenty-third aspect, a correction mechanism for correcting the shape of the punching plate is added.

According to the twenty-sixth aspect, in the plasma processing apparatus according to the twenty-fifth aspect, the correction mechanism holds a punching plate, a temperature sensor for detecting a temperature near a plasma discharge portion in the airtight container, and Move the beam according to the temperature near the plasma discharge part detected by the temperature sensor and correct the shape of the punching plate to correct the shape of the punching plate and optimize the distance between the punching plate and the workpiece And a moving mechanism.

According to the twenty-seventh aspect, in the plasma processing apparatus according to the twenty-sixth aspect, the crosspiece is formed of a shape memory alloy.

According to claim 28, in the plasma processing apparatus according to claim 26, a plurality of holes having a predetermined size are formed in the crosspiece, and a predetermined opening ratio is obtained by combining the holes with a punching plate.

According to the twenty-ninth aspect, a plurality of types of medium gases are supplied into the airtight container and a microwave is introduced to generate plasma, and the plasma generates active species.
In a method of manufacturing a semiconductor device having a step of performing a process on a semiconductor thin film using the active species, a flow rate of at least one of the medium gases is increased near an end point of the process on the semiconductor thin film, This is a method for manufacturing a semiconductor device in which a flow ratio of a medium gas is changed.

According to such a method of manufacturing a semiconductor device, necessary processing is performed on a workpiece by increasing the flow rate of a predetermined medium gas and changing the processing amount by the medium gas. In addition, a semiconductor device manufactured by such a method of manufacturing a semiconductor device can accurately process the thickness of the wiring, and a stable device can be realized.

According to a thirtieth aspect, in the method of manufacturing a semiconductor device according to the twenty-ninth aspect, when a halogen-based gas and an oxygen gas are supplied to the hermetic container as the medium gas, each medium is provided near the end point of the process. The proportion of oxygen gas in the gas flow ratio is increased.

In such a method of manufacturing a semiconductor device, the workpiece is processed to have a uniform taper angle by increasing the ratio of oxygen gas.

According to a thirty-first aspect, in the method of manufacturing a semiconductor device according to the thirty-ninth aspect, when the rate of the process for the semiconductor thin film is uniform, the flow ratio of the halogen-based gas and the oxygen gas is set to a predetermined value during the process. And the ratio of
Near the end point of the process, the proportion of oxygen gas at the outer edge in the hermetic container is increased.

In such a method of manufacturing a semiconductor device, the workpiece is processed to have a uniform taper angle by increasing the proportion of oxygen gas near the end point of the process.

According to claim 32, in the method of manufacturing a semiconductor device according to claim 29, when the processing rate of the semiconductor thin film is non-uniform, a portion of the semiconductor thin film having a low processing rate is processed during the processing. The proportion of the halogen-based gas is increased, and the proportion of the oxygen gas at the outer edge in the hermetic container is increased near the end point of the process.

In such a method of manufacturing a semiconductor device, the proportion of the halogen-based gas in the portion where the processing rate is low is increased, and thereafter, the proportion of the oxygen gas is increased near the end point of the processing. Thereby, the workpiece is processed into a uniform taper angle.

According to a thirty-third aspect, in the method of manufacturing a semiconductor device according to the twenty-eighth aspect, the pressure fluctuation in the hermetic container,
The end point of the process is monitored by the load of the pump for exhausting the gas in the airtight container or the rotation speed of the pump.

[0148]

BEST MODE FOR CARRYING OUT THE INVENTION

(1) Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 52 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 1 is a configuration diagram of a process plasma processing apparatus.

An external reinforcing portion 40 is provided outside the plasma chamber 2. Since the external reinforcing portion 40 does not come into contact with plasma and microwaves, it is not necessary to use a metal that is resistant to corrosion, and it is possible to pay attention only to bending strength. Therefore, it is formed of a material having high bending strength, for example, stainless steel or iron.

The external reinforcing portion 40 is provided outside the plasma chamber 2 and is disposed between the two microwave waveguides 8 and 9 so as to straddle the microwave waveguides 8 and 9.

The external reinforcing portion 40 includes a plurality of stoppers 4.
1, a microwave resonance end 15 in the plasma chamber 2 is connected and fixed via a bolt, for example.

The microwave resonance end 15 is connected to the lower surfaces of the microwave introduction windows 12 and 13 and the microwave resonance end 1.
A rectangular cavity is formed by the space surrounded by the side wall 5 and the side wall of the plasma chamber 2, and the microwave is resonantly excited.

An O-ring 42 is inserted between the microwave resonance end 15 and the two microwave introduction windows 12 and 13 to keep the plasma chamber 2 airtight.

Therefore, since the microwave resonance end 15 is fixed to the external reinforcing portion 40, the pressure applied to the two microwave introduction windows 12, 13 is supported by the external reinforcing portion 40 and the microwave resonance end 15. You.

[0156] Since the microwave resonance end 15 is used instead of the beam portion in the plasma chamber 2 in the past, the ratio of the cross-sectional area of the beam portion is reduced to half or less.
Nevertheless, the deflection at the microwave resonance end 15 due to such support is, for example, 0.3 mm or less,
Microwave introduction window 1 while uniforming the active species density
No breakage of 2 and 13 occurs.

The reason is that when a reinforcing portion is provided inside the plasma chamber 2 as in the conventional case, aluminum is used because corrosion resistance must be increased. However, in this case, the longitudinal coefficient (Young's modulus) is , 7.4 × 10 ³ kg / mm ²
It was only about. Therefore, it was necessary to increase the cross-sectional area of the beam portion.

On the other hand, in the present invention, since the reinforcing portion is provided outside the process chamber 2, there is no need to consider corrosion in the process chamber 2, and the longitudinal coefficient is 2.0 × 10 ⁴ kg. This is because a high-rigidity stainless steel as high as / mm ² can be used.

Further, by adopting such a structure, the size of the beam can be reduced, so that the interval between the microwave emission ports 10 and 11 can be reduced, and the thickness of the beam portion in the microwave introduction direction can be reduced. can do.

This greatly contributes to the uniformization of the density of active species generated by the plasmas 19 and 20. That is, it is required that the distribution rate of the processing rate expressed by the processing rate calculation formula (3) described later be ± 10%.
Assuming that the interval between 0 and 11 is d and the width of the beam in the direction connecting the microwave outlets 10 and 11 is g, it is desirable to satisfy the relationship of d / g ≧ 3. Assuming that the thickness is t, it is desirable to satisfy the relationship d / t ≧ 10.

Furthermore, assuming that the vertical distance from the microwave emission ports 10 and 11 to the processing stage 4 is f, it is desirable to satisfy the relationship of f / t ≧ 3.

For example, the distance f in the vertical direction from the microwave emission ports 10 and 11 to the processing stage 4 is set to, for example, 150
When the thickness t of the beam in the microwave introduction direction is changed to, for example, 10 mm, 18 mm, and 36 mm, the in-plane distribution rate of the processing rate on the workpiece (substrate 5) is 8 to 9 respectively. %, 10 ± 1%, and 30%. From this result, since the uniformity of the in-plane variation is large at 30%,
The thickness t of the beam in the microwave introduction direction is preferably about 18 mm or less.

The size satisfying the above conditions is, for example, the distance d between the microwave emission ports 10 and 11 is 220 m.
m, beam width g is 46 mm, microwave outlets 10 and 11
The vertical distance f from to the processing stage 4 is 150m
m and the thickness t of the beam are 18 mm.

These are data obtained by the present applicant through experiments.

Satisfaction of such conditions can be achieved by using the external reinforcing portion 40 of the present invention.

With such a configuration, the microwaves propagating through the two microwave waveguides 8 and 9 are emitted from the microwave emission ports 10 and 11, respectively, and are passed through the microwave introduction windows 12 and 13 to generate plasma. It is introduced into the chamber 2.

At the same time, the CF through gas supply ports 6 and 7
₄ , a medium gas such as O ₂ and Cl ₂ is supplied into the plasma chamber 2, so that the medium gas is excited by the microwave to generate plasmas 19 and 20, respectively.

Here, since the beam portion in the plasma chamber 2 is the microwave resonance end 15 whose cross-sectional area ratio is smaller than half the beam portion of the conventional device, it is generated by the plasmas 19 and 20. The activated species spread and uniformly distribute in the plasma chamber 2.

The active species generated by the plasmas 19 and 20 are carried by the gas flow toward the exhaust port 18 to process the substrate 5.

As described above, in the first embodiment, the external reinforcing portion 40 is provided outside the plasma chamber 2, and the microwave reinforcing terminal in the plasma chamber 2 is connected to the external reinforcing portion 40 via the stopper 41. 15 is connected and fixed, the beam portion in the plasma chamber 2 can be reduced in cross-sectional ratio to half or less than the beam portion of the conventional apparatus, and a large-area substrate 5 such as a liquid crystal substrate is processed. The density of active species generated by the plasmas 19 and 20 in the plasma chamber 2 can be made uniform.

As a result, the plasma loss (plasma loss due to the metal in the beam portion) on the metal surface in the plasma chamber 2 can be significantly reduced, the process speed immediately below the beam portion can be increased, and as shown in FIG. The etching rate immediately below or the ashing rate can be greatly improved.

As shown in the figure, the etching rate or ashing rate e ₁ of the conventional apparatus can be increased to the etching rate or ashing rate e ₂ of the apparatus of the present invention, and the uniformity of etching or ashing on the substrate 5 can be improved. it can.

That is, the distribution rate in the plane of the substrate 5 at each rate shown in the following equation changes from ± 30% to ± 10%.
The uniformity of the in-plane processing rate is improved.

Distribution rate = (R _max −R _min ) / (R _max + R _min ) × 100 (3) where R _max and R _min are the maximum values of the processing rate in the plane of the substrate 5, respectively. This is the minimum value.

Further, since there is no need to consider the loss of active species generated by the plasmas 19 and 20, the external reinforcement 4
0 can be increased, and the deflection of the microwave resonance end 15 can be minimized.

Although the first embodiment has been described with respect to the case where two microwave introduction windows 12 and 13 are provided, even when there are a plurality of beam portions with a plurality of microwave introduction windows, a plurality of microwave introduction windows are provided. By using the external reinforcing portion 40, the active species density in the plasma chamber 2 can be made uniform.

(2) Next, a second embodiment of the present invention will be described. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 3 is a configuration diagram of a process plasma processing apparatus.

At the upper part of the process chamber 3, a plasma source base plate 200 having an opening is provided. A microwave introduction tube 202 is provided at an opening of the plasma source base plate 200 through a microwave introduction window 201.

[0180] Two microwave emission ports 203 and 204 are formed in a portion of the microwave introduction tube 202 which comes into contact with the microwave introduction window 201. These two
One of the microwave outlets 203 and 204 is, for example, as shown in FIG.
As shown in (a), it is formed in a long cut groove symmetrical to the left and right, or as shown in FIG. These microwave outlets 203 and 204 are formed so that the longitudinal direction thereof coincides with the microwave propagation direction.

Further, a gas supply port 205 is formed in the plasma source base plate 200, and the gas supply port 205
Medium gas such as F ₄ , O ₂ , Cl ₂ is supplied to the process chamber 3.
It is supplied inside.

A magnet 20 as a magnetic field generating means is provided on the plasma source base plate 200 in the vicinity of the microwave introduction window 201, for example, on both sides of the microwave introduction window 201.
6 are provided.

These magnets 206 are provided in the process chamber 3
By applying a magnetic field to the plasma 207 generated in the inside, the frequency of collision of electrons with neutrons is increased by cyclotron motion (helical motion) of electrons, and the amount of active species generated by the collision of these electrons with neutrons Has the effect of increasing

The magnets 206 are connected to the microwave outlets 203 and 20 formed in the microwave introduction tube 202.
4 are provided in a direction corresponding to the longitudinal direction.

On the other hand, FIG. 5 is a configuration diagram of a process plasma processing apparatus when applied to a substrate 5 having a large area. In addition,
The same parts as those in FIG. 52 are denoted by the same reference numerals, and detailed description thereof will be omitted.

On both sides of the microwave introduction window 201 and the reinforcing portion 16, magnets 208 to
210 are provided. Note that the magnet 210 need not be provided depending on the process or the like.

[0187] These magnets 208 to 210 generate the plasmas 19, 2 generated in the process chamber 3 in the same manner as described above.
By applying a magnetic field to zero, the electrons are caused to move in a cyclotron to increase the frequency of collision between the electrons and neutrons, and have the effect of increasing the amount of active species generated by the collision between these electrons and neutrons. I have.

As shown in FIG. 6, these magnets 208 to 210 are provided in a direction corresponding to the longitudinal direction of each of the microwave discharge ports 10 and 11 formed in each of the microwave inlet pipes 8 and 9.

By the way, the magnet 206 applied to FIG.
The magnetic field intensity and the arrangement of the magnets 208 to 210 applied to FIG. 5 will be described below.
As shown in (c), the cyclotron motion system, the magnetic field confinement system, and the electron cyclotron resonance (ECR: Electron
Cyclotron Resonance) method is used.

Of these, in the cyclotron motion system and the magnetic field confinement system, it is a condition that electrons can perform cyclotron motion by receiving energy from a magnetic field. In the magnetron method, neutral particles are ionized by cyclotron motion, and in the magnetic field confinement method, the cyclotron rotates around it, so that the residence time of electrons becomes longer and the electron density increases.

In order for cyclotron motion to occur, it is necessary that the radius of rotation of the cyclotron (Lama radius ρ) is smaller than the mean free path λ of electrons (average value of thermal collision).

The Rama radius ρ is obtained by the following equation.

Ρ = mv / qB (4) where B is the magnetic field strength, e is the electric charge, and m is the mass. From the above equation, the relationship between the electron temperature and the Rama radius ρ is calculated as shown in FIG. Here, the mean free path at a pressure of 0.5 Pa is about 0.5 cm as shown in FIG.

Since electrons collide with neutral particles almost once in the mean free path λ, if the rama radius ρ is smaller than the mean free path λ (for example, about 1/10 of the mean free path λ), it is sufficient. Can rotate.

Therefore, from FIG. 8, the Rama radius ρ is 0.05
cm or less is 100 gauss or more,
In the cyclotron motion method and the magnetic field confinement method, the magnetic field intensity generated by the magnet 206 and the magnets 208 to 210 is 100 Gauss or more.

On the other hand, in the ECR system, ECR resonance is
Occurs when the electron cyclotron frequency and the microwave frequency are equal. Electron cyclotron frequency ω
Is represented by the following equation.

Ω = eB / m (5) From the ECR resonance condition, ω = 2π × 2.45 GHz (microwave frequency). This is substituted into the above equation (5), and the magnetic field intensity B becomes 875 gauss.

As a result, a magnetic field intensity B of 875 gauss or more necessary for the ECR condition in the plasma is required. Considering the distance between the plasma and the magnets 206 and 208 to 210 and the magnetic field loss in the process chamber 3, The value of the surface magnetic field strength of the magnet itself is
As 210, the magnetic field strength B is 875 gauss (= 0.0
875T) is required at least 10 times or more and 1T or more.

Next, the operation of each device configured as described above will be described.

In the configuration of the process plasma processing apparatus shown in FIG. 3, the microwave propagating in the microwave waveguide 202 is supplied to the two microwave emission ports 203, 2
The light is emitted from the substrate 04 and is introduced into the process chamber 3 through the microwave introduction window 201.

At the same time, the CF
_Since a medium gas such as ₄ , O ₂ , and Cl ₂ is supplied into the process chamber 3, the medium gas is excited by the microwave, and plasma 207 is generated.

Here, since a magnetic field is applied to the plasma 207 from the magnet 206, the electrons in the plasma 207 perform cyclotron motion due to the application of the magnetic field, and many collisions with neutrons occur. Due to the collision of the electrons and the neutrons, a large amount of active species is generated, and the density of the active species in the plasma increases.

[0203] Therefore, Al in the semiconductor device manufacturing process or liquid crystal display device manufacturing process, ITO, in the etching of such SiO _x, mainly processed using ion for vertical of speed or machining shape of the machining Even when it is desired to reduce the operating gas pressure to eliminate ion extinction due to collision with neutral gas, the density of active species in the plasma can be increased, and a stable plasma is maintained. You.

Thus, the stable operation range of the plasma is as follows:
As shown in FIG. 19, the conventional gas pressure range of 5 to 100 Pa has been expanded to a gas pressure range of 0.05 to 100 Pa.

The density of the active species generated by the plasma 207 is uniformly distributed in the process chamber 3, and the active species is transferred to the gas
To process.

On the other hand, in the configuration of the process plasma processing apparatus shown in FIG.
Each microwave propagating in the inside is emitted from each microwave emission port 10, 11, and each microwave introduction window 12, 1
3 and is introduced into the process chamber 3.

At the same time, CF was supplied through the gas supply ports 6 and 7.
_Since a medium gas such as ₄ , O ₂ , and Cl ₂ is supplied into the process chamber 3, the medium gas is excited by the microwave, and plasmas 19 and 20 are generated, respectively.

Here, a magnetic field is generated from each of the magnets 208 to 210 by a cyclotron motion system, a magnetic field confinement system,
Plasma 1 by one of the CR methods
9 and 20 so that plasmas 19 and 20
The electrons inside are subjected to cyclotron motion when a magnetic field is applied, and many collisions with neutrons occur. Due to the collision of the electrons and the neutrons, a large amount of active species is generated, and the density of the active species in the plasma increases.

Therefore, similarly to the above, in the semiconductor device manufacturing process and the liquid crystal display device manufacturing process, Al, ITO,
In the etching of SiO _x or the like, processing mainly using ions is required to speed up the processing or verticalize the processing shape, and the operating gas pressure is required due to the necessity of eliminating the extinction of ions due to collision with a neutral gas. Even if it is desired to lower the pressure of the plasma, the density of active species in the plasma can be increased, and stable plasma can be maintained.

Thus, the stable operation range of the plasma is as follows:
As shown in FIG. 10, the gas pressure was conventionally in the range of 5 to 100 Pa, but expanded to the gas pressure of 0.05 to 100 Pa.

The density of active species generated by the plasmas 19 and 20 is uniformly distributed in the process chamber 3, and the active species is carried to the gas flow toward the exhaust port 18 to process the substrate 5. .

As described above, in the second embodiment, the magnets 206 or the magnets 208 to 210 are provided on both sides of the microwave introduction window 201 or 12 or 13 so that the magnetic field is generated by the plasma generated in the process chamber 3. Is added, electrons in the plasma undergo cyclotron motion, collisions with neutral particles increase, active species are generated, and stable plasma can be maintained even in a low-pressure gas. Thus, A
l, ITO, to etching such as SiO _x can be applied to the plasma source.

When applied to conventional processes such as ashing and etching of a-Si and SiN films,
The gas pressure region for stable operation is expanded, and the stability of plasma is also increased. This increases the stability of the device and improves the reliability of the process.

Further, the microwave introduction window 201 or 1
Since the magnet 206 or the magnets 208 to 210 are provided on both sides of the magnets 2 and 13 in a simple structure, the apparatus can be manufactured at low cost.

FIG. 11 shows another application example. FIG. 3 shows both sides of the microwave introduction windows 12 and 13 and the microwave resonance end 1 in the process plasma processing apparatus of the first embodiment.
5 is provided with magnets 208 to 210.

With such a configuration, the microwaves that have propagated in the two microwave waveguides 8 and 9 are emitted from the microwave emission ports 10 and 11, respectively, and passed through the microwave introduction windows 12 and 13 to generate plasma. It is introduced into the chamber 2.

At the same time, the CF was supplied through the gas supply ports 6 and 7.
₄ , a medium gas such as O ₂ and Cl ₂ is supplied into the plasma chamber 2, so that the medium gas is excited by the microwave to generate plasmas 19 and 20, respectively.

Here, a magnetic field is generated from each of the magnets 208 to 210 by a plasma 19, 20 using any one of a magnetron method, a magnetic field confinement method, and an ECR method.
, Electrons in the plasmas 19 and 20 perform cyclotron motion when a magnetic field is applied, and many collisions with neutrons occur. Due to the collision of the electrons and the neutrons, a large amount of active species is generated, and the density of the active species in the plasma increases.

Therefore, in the same manner as described above, Al, ITO, Si
In the etching of _Ox or the like, processing mainly using ions is required for speeding up processing or verticalizing a processing shape.
In addition, even when it is desired to lower the operating gas pressure due to the necessity of eliminating ion extinction due to collision with a neutral gas, the density of active species in the plasma can be increased and a stable plasma can be maintained. . The stable operation range of the plasma is, as shown in FIG.
What was in the range of Pa, the gas pressure was 0.05-100P
It spreads over the range of a.

At the same time, the beam portion in the plasma chamber 2 has a sectional area ratio that is one half that of the beam portion of the conventional apparatus.
Since the microwave resonance end 15 is as small as below, active species generated by the plasmas 19 and 20 spread and uniformly distribute in the plasma chamber 2.

The active species generated by the plasmas 19 and 20 are carried by the gas flow toward the exhaust port 18 to process the substrate 5.

Therefore, by providing the external reinforcing portion 40, the same effects as in the first embodiment, such as the mechanical strength of the microwave resonance end 15 can be reinforced, can be obtained, and stable even in low-pressure gas. can sustain the plasma, Al, ITO, to etching such as SiO _x can be applied to the plasma source.

When applied to the conventional processes such as ashing and etching of a-Si and SiN films,
The gas pressure region for stable operation is expanded, and the stability of plasma is also increased. This increases the stability of the device and improves the reliability of the process.

Further, the microwave introduction window 201 or 1
Since the magnet 206 or the magnets 208 to 210 are provided on both sides of the magnets 2 and 13 in a simple structure, the apparatus can be manufactured at low cost.

(3) Next, a third embodiment of the present invention will be described. The same parts as those in FIG. 3 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 12 is an overall configuration diagram of a process plasma processing apparatus, and FIG. 13 is a specific configuration diagram of a microwave emission port.

The two parallel microwave outlets 220 and 211 formed in the microwave introduction tube 202 are used for processing conditions in the process chamber 3 such as ashing,
The interval length L between each process according to each process such as etching
_a is configured to be variable.

Specifically, as shown in FIG. 13, the microwave introduction window 20 in the microwave introduction tube 202 is used.
A slot antenna section 222 is formed in a portion in contact with 1.

The slot antenna section 203 has two openings 223 and 224 which are parallel to each other. These openings 223 and 224 are rectangular and formed in a direction in which the longitudinal direction coincides with the microwave propagation direction.

Inside the slot antenna section 203, two metal plates 225 and 226
23 and 224 are provided movably in the directions of arrows (A) and (B).

That is, thin metal rods 227 and 228 for operation are attached to the metal plates 225 and 226, respectively. I have.

The widths of the metal plates 225 and 226 are
When arranged in the openings 223 and 224, respectively, half of each of the openings 223 and 224 are shielded and half of the openings are opened, and the microwave emission ports 220 and 221 having a predetermined width are formed at the opened portions. It has become.

Therefore, each of the operating metal rods 227, 228
Is operated, for example, when one metal plate 225 is moved in the direction of arrow (A) and the other metal plate 226 is moved in the direction of arrow (B), the two microwave emission ports 2 are moved.
Interval length of 20,211 becomes L _a, as shown in FIG. 14 (a).

Conversely, when one metal plate 225 is moved in the direction of arrow (B) and the other metal plate 226 is moved in the direction of arrow (A), the two microwave emission ports 220 and 211 are moved.
Interval length is L _b (> L _a) as shown in FIG. 14 (b) of the.

Here, in the process conditions, for example, in etching, the interval length L between the two microwave emission ports 220 and 211
Set small example 40mm to _a, in the ashing set to increase for example 50mm apart length L _b of the microwave outlet 220,211.

Next, the operation of the device configured as described above will be described.

The microwave propagating in the microwave waveguide 202 is supplied to the two microwave emission ports 220 and 221.
And introduced into the process chamber 3 through the microwave introduction window 201, and together with the gas supply port 20
Since a medium gas such as CF ₄ , O ₂ , and Cl ₂ is supplied into the process chamber 3 through 5, the medium gas is excited by microwaves, and plasma 207 is generated.

Here, under the process conditions, for example, etching, the operating metal rods 227 and 228 are moved, and one metal plate 225 is moved in the direction of the arrow (A) and the other metal plate 226 is moved in the direction of the arrow (A). (B) is moved in the direction, spacing length of the microwave outlet 220,211 is set to L _a (e.g. 40 mm) as shown in FIG. 14 (a).

In ashing, one metal plate 225 is used.
Is moved in the direction of arrow (B) and the other metal plate 2
26 is moved in the direction of the arrow (A), and the interval length between the microwave emission ports 220 and 211 is set to L _b (for example, 50 mm) as shown in FIG. 14B.

A magnetic field is generated from the magnet 206 by the plasma 20.
7, the electrons in the plasma 207 perform cyclotron motion due to the application of a magnetic field,
Many collisions with neutrons occur. A large amount of active species is generated due to the collision between the electrons and the neutrons.
Is maintained.

The density of the active species generated by the plasma 207 is uniformly distributed in the process chamber 3, and the active species is carried by the gas flow toward the exhaust port 18, so that the etching or ashing of the substrate 5 is performed. Done.

[0242] Since in the form of the thus the third embodiment was a selectively variable freely configure an interval length between two microwave outlet 220, 221 to a small L _a or large L _b, the process conditions That is, the interval length between the microwave emission ports 220 and 221 can be set to be optimal according to the etching and the ashing, and a stable plasma discharge can be obtained in the etching and the ashing.

Therefore, in the ashing, the interval length (for example, 50 mm) between the microwave emission ports 10 and 11 can be increased, the plasma discharge can be stabilized, and the uniformity of the resist peeling on the liquid crystal substrate surface can be improved.

In the etching, the interval length (for example, 40 mm) between the microwave emission ports 10 and 11 can be shortened.
Even if an unstable gas such as CF ₄ , Cl ₂ or SF ₆ is used at a flow rate equivalent to that of O ₂ , a stable plasma discharge can be obtained.

Thus, as in the prior art, each time the process conditions change, slot plates having different spacing lengths of the microwave emission ports 10 and 11 corresponding to the respective process conditions are opened and attached to the process chamber 3, and the process chamber is again mounted. 3
There is no need to perform a series of large-scale operations such as closing the.

(4) Next, a fourth embodiment of the present invention will be described. 12 and 13 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 15 is a specific configuration diagram of a microwave emission port in a process plasma processing apparatus.

A slot antenna section 240 is formed in a portion of the microwave introduction tube 202 which is in contact with the microwave introduction window 201.

The slot antenna section 240 has an opening 241 formed therein.

Further, inside the slot antenna section 240, a plurality of rectangular bars 242, for example, six rectangular bars 242 each having a volume equal to the volume of the opening 241 are provided so as to be movable in the direction of the arrow (C). Have been.

Each of these square members 242 is provided with thin metal rods 243a to 243f for operation, and these metal rods 243a to 243f are attached to the slot antenna section 24.
0 through the guide hole 244.

Therefore, each of the operating metal bars 243a to 243a
3f, the two square members 24 as shown in FIG.
2 were disposed in the center, by each 2 by one place each of the remaining square timber 242 on both sides, for example, two microwave outlet 220, 221 of the gap length L _a is formed.

Further, as shown in FIG.
2 is disposed at the center and the remaining square members 242 are disposed on both sides, for example, so that the interval length L _b (> L _a )
Are formed.

Further, as shown in FIG.
By arranging 2 at the center, for example, the interval length L
_c (> L _b ) two microwave outlets 220, 221
Are formed, and a microwave emission port 220 having an arbitrary interval length is provided.
221 are formed.

Next, the operation of the device configured as described above will be described.

The microwave propagating in the microwave waveguide 202 is supplied to the two microwave emission ports 220 and 221.
And introduced into the process chamber 3 through the microwave introduction window 201, and together with the gas supply port 20
Since a medium gas such as CF ₄ , O ₂ , and Cl ₂ is supplied into the process chamber 3 through 5, the medium gas is excited by microwaves, and plasma 207 is generated.

Here, under the process conditions, for example, the etching, as shown in FIG.
a~243f is operated, two square timber 242 each remaining square timber 242 while being arranged in the central portion are arranged on either side, two microwave outlet 220 and 221, for example, interval length L _a (e.g. 40 mm) It is formed.

In ashing, each of the operating metal rods 243a to 243f is operated as shown in FIG.
One square member 242 is arranged at the center and the other square members 242 are arranged on both sides. For example, two microwave outlets 220 and 221 having an interval length L _b (for example, 50 mm) are provided.
Is formed.

A magnetic field is generated from the magnet 206 by the plasma 20.
7, the plasma 20
The electrons in 7 perform cyclotron motion, generate many collisions with neutrons, and the density of active species in the plasma increases, so that stable plasma 207 is maintained.

The density of the active species generated by the plasma 207 is uniformly distributed in the process chamber 3, and the active species is carried by the gas flow toward the exhaust port 18, so that the etching or ashing of the substrate 5 is performed. Done.

As described above, in the fourth embodiment, it is needless to say that the same effects as in the third embodiment can be obtained.
221 interval length of not only the L _a, L _b, can be varied arbitrarily as such L _c depending on the process conditions.

Note that the above third and fourth embodiments are
It may be modified as follows.

For example, in the third or fourth embodiment, a plurality of microwave outlets whose distances can be freely varied may be arranged in parallel. Thus, stable plasma discharge can be performed in a large area, and high-quality processing characteristics can be obtained for a large-sized substrate 5.

Also, as shown in FIG.
The movement of 5, 226 may be automated with mechanical or electrical structures. That is, each metal rod 227, 228 for operation
Is connected to a transmission mechanism 245 composed of a hydraulic or pneumatic circuit having a piston cylinder or the like.

The transmission mechanism 245 includes the signal controller 24
The signal control unit 246 executes a control program stored in advance and executes the two microwave emission ports 220 and 22.
Interval length of 1, for example etching, interval length L _a corresponding to ashing, the metal plate necessary to obtain a L _b 225,22
6 has a function of transmitting the moving direction and the distance thereof as control signals.

Thus, the two microwave outlets 22
By automating the interval lengths L _a and L _{b of 0} and 221, the interval length L of these microwave outlets 220 and 221 is
_a, L _b can significantly reduce the time of varying the etching, the processing efficiency due to process conditions such as ashing can be increased.

Further, such a microwave emission port capable of making the interval length of each other variable is also applicable to the process plasma processing apparatus shown in FIGS. 5 and 11.

(5) Next, a fifth embodiment of the present invention will be described. The same parts as those in FIG. 55 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 18 is a configuration diagram of a process plasma processing apparatus, and FIG. 19 is a configuration diagram of the same apparatus as viewed from above.

In the airtight container 20, a plurality of ejection nozzles 5
0 and 51 are arranged facing each other. That is, these ejection nozzles 50 and 51 are disposed opposite to each other via the beam portion 52 between the two microwave introduction windows 28 and 29, and each of the ejection nozzles 50 and 51 is located above the inner wall on both sides of the airtight container 20. It is very near the lower surfaces of the introduction windows 28 and 29.

The jet nozzles 50 and 51 jet medium gases such as CF ₄ , O ₂ and Cl ₂ toward the center of the hermetic container 20.

With such a configuration, the microwaves oscillated from the microwave oscillators 24 and 25 and propagated in the microwave waveguides 22 and 23 are emitted from the microwave emission ports 26 and 27, respectively. , Are introduced into the airtight container 20 through the microwave introduction windows 28 and 29.

At the same time, a medium gas such as CF ₄ , O ₂ , Cl ₂ or the like is jetted from the jet nozzles 50 and 51 disposed on both sides of the airtight container 20 toward the center of the airtight container 20, respectively. .

The ejected medium gas travels toward the center of the airtight container 20 as shown by arrows (c) and (d).
It reaches just below the beam portion 42.

When the medium gas is supplied into the airtight container 20 in this manner, the medium gas is excited by the microwave, and plasmas 53 and 54 are generated below the microwave introduction windows 28 and 29, respectively.

The active species generated by the plasmas 53 and 54 are carried by the gas flows toward the respective gas exhaust systems 33a and 33b, and process the substrate 5.

At this time, the active species has a uniform density over the entire surface of the substrate 5 in the hermetic container 20 since the medium gas flows from both sides of the hermetic container 20 directly below the beam portion 42.

As described above, in the fifth embodiment, a plurality of ejection nozzles 50 are provided on both sides of the airtight container 20.
Since the ejection nozzles 51 and 51 are arranged to face each other,
Since the medium gas ejected from the gas flows toward the central portion in the hermetic container 20, the active species density in the hermetic container 20 generated by the plasmas 53 and 54 is uniformly distributed.

As described above, since the active species density can be evenly distributed in the hermetic container 20, the etching rate and the ashing rate for the large-area substrate 5 are lower than those of the conventional apparatus as shown in FIG. The etching rate and the ashing rate of the substrate 5 can be improved, can be uniform over the entire surface of the substrate 5, and the processing speed can be increased.

(6) Next, a sixth embodiment of the present invention will be described. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 21 is a configuration diagram of a process plasma processing apparatus, and FIG. 22 is a configuration diagram of the same apparatus as viewed from above.

The processing stage 61 is provided below the airtight container 60.
The processing stage 61 has a substrate 5 such as a liquid crystal substrate mounted thereon.

At the top of the airtight container 60, three microwave waveguides 62 to 64 are provided. These microwave waveguides 62 to 64 guide microwaves oscillated from microwave oscillators 65a to 65c, respectively, and have microwave emission ports 67 to 69 at the bottom thereof.
Are formed.

On the lower surfaces of these microwave waveguides 62 to 64, there are provided respective microwave introduction windows 70 to 72 made of a dielectric material such as quartz or alumina ceramic.

The three microwave introduction windows 70 to 72
, Beam portions 73 and 74 are provided between the microwave introduction windows 70 to 74.
72 are supported.

The three microwave introduction windows 70 to 70
In the airtight container 60 provided with the
5, 76 are opposed to each other. In other words, these ejection nozzles 75 and 76 are disposed to face each other via the beam portions 73 and 74 between the three microwave introduction windows 70 to 72, respectively, and at the upper portions of the inner walls on both sides of the airtight container 60. , Are very close to the lower surfaces of the three microwave introduction windows 70 to 72.

In the airtight container 60, a pair of ejection nozzles 75a is provided for each of the microwave introduction windows 70 to 72 on the other opposite inner wall different from the inner wall where the ejection nozzles 75 and 76 are provided. 76a are disposed opposite to each other.

With such a configuration, the microwaves oscillated from the microwave oscillators 65a to 65c and propagated in the microwave waveguides 62 to 64 are emitted from the microwave emission ports 67 to 69, respectively. And is introduced into the airtight container 60 through the three microwave introduction windows 70 to 72.

At the same time, a medium gas such as CF ₄ , O ₂ , Cl ₂ or the like is jetted toward the center of the airtight container 60 from the jet nozzles 75, 76 arranged on both sides of the airtight container 60. .

[0290] Also, the C from the ejection nozzles 75a and 76a
Medium gas such as F ₄ , O ₂ , Cl ₂ is jetted into the airtight container 60.

These ejected medium gases are indicated by arrows (e).
As shown in (f) and (c), the beam goes toward the center of the hermetic container 60, passes directly below the beam portions 73 and 74, and reaches below the microwave introduction window 72 in the center.

When the medium gas is supplied into the airtight container 60 in this way, the medium gas is excited by the microwave, and plasmas 77 to 79 are generated below the three microwave introduction windows 70 to 72, respectively. .

The active species generated by the plasmas 77 to 79 are carried by the gas flows toward the gas exhaust systems 33a and 33b, and process the substrate 5.

At this time, since the medium gas flows from both sides of the hermetic container 60 under the beam portions 73 and 74 toward the lower portion of the microwave introduction window 72 at the central portion, the active species flows in the hermetic container 60. The density becomes uniform over the entire surface of the substrate 5 inside.

As described above, in the sixth embodiment, a plurality of ejection nozzles 75 to 75 are provided on both sides of the airtight container 60.
76, the three microwave introduction windows 70
, The active species density in the hermetic container 60 generated by the plasmas 77 to 79 can be uniformly distributed on the large-area substrate 5, and the etching rate and the ashing rate for the large-area substrate 5 are provided. Can be uniformed over the entire surface of the substrate 5 and the processing speed can be increased.

(7) Next, a seventh embodiment of the present invention will be described. 21 and 22 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 23 is a block diagram of a process plasma processing apparatus, and FIG. 24 is a block diagram of the apparatus as viewed from above.

The airtight container 60 provided with the three microwave introduction windows 70 to 72 has three microwave introduction windows in addition to the first ejection nozzle groups 75 and 76 arranged on both sides to face each other. Each of the beam portions 73 and 74 provided between the windows 70 to 72 is provided with a second ejection nozzle group 80 and 81 which are also arranged to face each other.

The second ejection nozzle groups 80 and 81 are arranged facing the beam portions 73 and 74, respectively, toward the center of the airtight container 60.

With such a configuration, the microwaves oscillated from the microwave oscillators 65a to 65c and propagated in the microwave waveguides 62 to 64 are respectively emitted from the microwave emission ports 67 to 69. And is introduced into the airtight container 60 through the three microwave introduction windows 70 to 72.

At the same time, a medium gas such as CF ₄ , O ₂ , Cl _2, etc.
Are ejected from the ejection nozzle groups 75, 76 toward the center of the airtight container 60, respectively.
4 are ejected from the second ejection nozzle groups 80 and 81 provided toward the center of the airtight container 60, respectively.

[0302] In addition, the C from the ejection nozzles 75a and 76a
Medium gas such as F ₄ , O ₂ , Cl ₂ is jetted into the airtight container 60.

The ejected medium gas is indicated by an arrow (g).
As shown in (h) and (i), the gas flows uniformly below the three microwave introduction windows 70 to 72 in the airtight container 60.

When the medium gas is supplied into the airtight container 60 in this manner, the medium gas is excited by the microwave, and plasmas 82 to 84 are generated below the three microwave introduction windows 70 to 72, respectively. .

The active species generated by the plasmas 82 to 84 are carried in a gas flow toward each of the gas exhaust systems 33a and 33b, and process the substrate 5.

At this time, since the active species uniformly flow below the three microwave introduction windows 70 to 72, the airtight container 6
The density becomes uniform over the entire surface of the substrate 5 in the area 0.

As described above, in the seventh embodiment, in addition to the first ejection nozzle groups 75 and 76 arranged on both sides in the airtight container 60, each beam portion 7
The second and third ejection nozzle groups 80 and 81 are also provided on the third and 74 so as to face each other.
The active species density in the hermetic container 60 generated by the plasma 77 to 79 can be uniformly distributed on the large-area substrate 5, and the etching rate and the ashing rate for the large-area substrate 5 are uniform over the entire surface of the substrate 5. And the processing speed is increased.

(8) Next, an eighth embodiment of the present invention will be described.

FIG. 25 is a configuration diagram of a process plasma processing apparatus, and FIG. 26 is a configuration diagram of the same apparatus as viewed from above.

At the lower part of the airtight container 90, a processing stage 91 is provided.
A substrate 5 such as a large-diameter semiconductor wafer or a liquid crystal substrate is placed on the processing stage 91.

[0311] Four microwave waveguides 92 and 93 are provided above the airtight container 90. The two microwave waveguides are not shown in the drawing because of the drawing.

The microwave waveguides 92 and 93 guide the microwave oscillated from the microwave oscillator 94, and have microwave emission ports 95 and 96 formed at the bottom thereof.

On the lower surfaces of these microwave waveguides 92 and 93, four microwave introduction windows 97 to 100 made of a dielectric material such as quartz or alumina ceramic are provided, respectively.

The four microwave introduction windows 97 to 10
The beam portions 101 to 103 are provided between the zeros, respectively, and the microwave introduction windows 97 to 100 are supported by these beam portions 101 to 103.

The four microwave introduction windows 97 to 97
The first ejection nozzle groups 104 and 105 are arranged in the airtight container 90 provided with the first ejection nozzle group 100 so as to face each other. That is, these first ejection nozzle groups 104 and 105
The microwave introduction windows 97, 100 on both sides are disposed opposite to each other via the beam portions 101-103 between the two microwave introduction windows 97-100, respectively, at the upper part of the inner wall on both sides of the airtight container 90. It is very close to the lower surface.

Each of the three beam portions 101-103 except for the central beam portion 102 has
Second ejection nozzle groups 106 and 107 are provided.
These second ejection nozzles 106 and 107 are arranged to face each other with a central beam portion 102 interposed therebetween.

In the airtight container 90, four microwave introduction windows 97 to 100 are provided on the other opposite inner wall different from the inner wall where the jet nozzles 104 and 105 are provided.
A pair of ejection nozzles 108 and 109 are disposed to face each other.

With such a configuration, each of the microwave oscillators 94 oscillates and each of the microwave waveguides 9
Microwaves that have propagated inside 2, 93 are emitted from microwave emission ports 95, 96, respectively, and are introduced into airtight container 60 through four microwave introduction windows 97-100, respectively.

At the same time, a medium gas such as CF ₄ , O ₂ , Cl _2, etc.
From the jet nozzle groups 104 and 105 of the airtight container 9
0, and is spouted toward the center of
6 and 107, the second ejection nozzle groups 106, 1
07 are respectively ejected toward the center of the airtight container 90.

[0320] In addition, the C
Medium gas such as F ₄ , O ₂ , Cl ₂ is jetted into the airtight container 90.

[0321] These ejected medium gases are indicated by arrows (nu).
As shown in FIGS. 7A and 7B, the air flows downward of the central beam portion 102 in the airtight container 90.

When the medium gas is supplied into the airtight container 90 in this manner, the medium gas is excited by the microwave, and plasma is generated below the four microwave introduction windows 97 to 100, respectively.

The active species generated by these plasmas are carried by the gas flows toward the gas exhaust systems 33a and 33b, and process the substrate 5.

At this time, the active species is applied to the beam 10 at the center.
2, the density becomes uniform over the entire surface of the substrate 5 in the hermetic container 90.

As described above, in the eighth embodiment, in addition to the first ejection nozzle groups 104 and 105 arranged on both sides in the airtight container 90, the beam portions 101 and 103 are provided. Also provided with the second ejection nozzle groups 106 and 107 arranged opposite to each other, so that the airtight container 90 generated by the plasma as in the above embodiments.
, The active species density can be uniformly distributed on the large-area substrate 5, and the etching rate and the ashing rate for the large-area substrate 5 can be made uniform over the entire surface of the substrate 5,
And the processing speed is increased.

(9) Next, a ninth embodiment of the present invention will be described. The same parts as those in FIGS. 18 and 19 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 27 is a configuration diagram of a process plasma processing apparatus, and FIG. 28 is a configuration diagram of the same apparatus as viewed from above.

[0328] A plurality of ejection nozzles 110 and 111 are arranged in the beam portion 52 in the airtight container 20. One of the ejection nozzles 110 and 111
Is arranged to face the ejection nozzle 50, and the other ejection nozzle 111 is arranged to face the ejection nozzle 51.

The jet nozzles 110 of these beam portions 52
The nozzle diameter of 111 is each ejection nozzle 50 on both sides,
51 is formed smaller than the nozzle diameter of 51, and the ejection amount of the medium gas is reduced.

With such a configuration, the microwaves oscillated from the microwave oscillators 24 and 25 and propagated in the microwave waveguides 22 and 23 are emitted from the microwave emission ports 26 and 27, respectively. , Are introduced into the airtight container 20 through the microwave introduction windows 28 and 29.

At the same time, a medium gas such as CF ₄ , O ₂ , Cl ₂ or the like is jetted from the jet nozzles 50 and 51 disposed on both sides of the airtight container 20 toward the center of the airtight container 20, respectively. .

The ejected medium gas travels toward the center of the airtight container 20 as shown by arrows (c) and (d).
It reaches just below the beam portion 52.

At the same time, each ejection nozzle 11 of the beam portion 52
Medium gases such as CF ₄ , O ₂ , and Cl ₂ are ejected from 0 and 111, respectively, and this medium gas also flows downward of the beam portion 52.

[0334] The amount of medium gas ejected from these ejection nozzles 110 and 111 depends on the ejection nozzles 50 and 5 on both sides.
The medium gas amount is smaller than the medium gas amount ejected from No. 1.

When the medium gas is supplied into the airtight container 20 in this manner, the medium gas is excited by the microwave, and plasma is generated below the microwave introduction windows 28 and 29, respectively.

The active species generated by these plasmas are carried by the gas flows toward the respective gas exhaust systems 33a and 33b, and process the substrate 5.

At this time, the active species is uniform over the entire surface of the substrate 5 in the hermetic container 20 since the medium gas flows from both sides of the hermetic container 20 and the beam portion 52 toward the lower side of the beam portion 52. Density.

As described above, in the ninth embodiment, a plurality of ejection nozzles 50,
Since a plurality of ejection nozzles 110 and 111 having a small nozzle diameter are provided in the beam portion 52 and the beam portion 52 is provided, similarly to the above-described embodiments, the active species density in the hermetic container 20 generated by plasma can be increased over a large area. The etching rate and the ashing rate for the large-area substrate 5 can be uniform over the entire surface of the substrate 5 and the processing speed can be increased.

(10) Next, a tenth embodiment of the present invention will be described. The same parts as those in FIGS. 27 and 28 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 29 is a configuration diagram of a process plasma processing apparatus, and FIG. 30 is a configuration diagram of the same apparatus as viewed from above.

In the beam portion 52 in the airtight container 20, a plurality of ejection nozzles 112 and 113 are arranged. One of the ejection nozzles 112, 113
Is arranged to face the ejection nozzle 50, and the other ejection nozzle 113 is arranged to face the ejection nozzle 51.

The number of the ejection nozzles 112 and 113 is smaller than the number of the ejection nozzles 50 and 51 on both sides. For example, the number of the ejection nozzles 50 and 5 on both sides is small.
The number is set to two for five arrangements of one, and the ejection amount of the medium gas is reduced.

With such a configuration, the microwaves propagating in the microwave waveguides 22 and 23 are emitted from the microwave emission ports 26 and 27, respectively, and passed through the microwave introduction windows 28 and 29 to form an airtight container. 20 is introduced.

At the same time, a medium gas such as CF ₄ , O ₂ , Cl ₂ or the like is ejected from the ejection nozzles 50 and 51 disposed on both sides of the airtight container 20 toward the center of the airtight container 20, respectively. .

The ejected medium gas travels toward the center of the airtight container 20 as shown by arrows (c) and (d).
It reaches just below the beam portion 52.

At the same time, each ejection nozzle 11 of the beam portion 52
Medium gases such as CF ₄ , O ₂ , and Cl ₂ are ejected from the elements ₂ and 113, respectively, and the medium gases also flow downward of the beam portion 52.

The amount of the medium gas ejected from these ejection nozzles 112 and 113 depends on the ejection nozzles 50 and 5 on both sides.
The medium gas amount is smaller than the medium gas amount ejected from No. 1.

When the medium gas is supplied into the airtight container 20 in this manner, the medium gas is excited by the microwave, and plasma is generated below the microwave introduction windows 28 and 29, respectively.

The active species generated by these plasmas are carried by the gas flows toward the gas exhaust systems 33a and 33b, and process the substrate 5.

At this time, the active species is uniformly distributed over the entire surface of the substrate 5 in the hermetic container 20 because the medium gas flows from both sides of the hermetic container 20 and the beam portion 52 toward below the beam portion 52. Density.

As described above, in the tenth embodiment, a plurality of ejection nozzles 5 are provided on both sides of the airtight container 20.
Since a plurality of ejection nozzles 112 and 113 having a small number of arrangements are provided in the beam portion 52 and the number of ejection nozzles 112 and 113 are small, the active species density in the hermetic container 20 generated by the plasma can be increased as in the above embodiments. The distribution can be uniform on the substrate 5 having a large area, the etching rate and the ashing rate for the large-area substrate 5 can be made uniform over the entire surface of the substrate 5, and the processing speed can be increased.

(11) Next, an eleventh embodiment of the present invention will be described. The same parts as those in FIGS. 18 and 19 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 31 is a configuration diagram of a process plasma processing apparatus, and FIG. 32 is a configuration diagram of the same apparatus as viewed from above.

At the lower part of the beam portion 52 in the airtight container 20,
A plurality of gas suction ports 120 for sucking gas in the airtight container 20 are provided.

With such a configuration, the microwaves oscillated from the microwave oscillators 24 and 25 and propagated in the microwave waveguides 22 and 23 are emitted from the microwave emission ports 26 and 27, respectively. , Are introduced into the airtight container 20 through the microwave introduction windows 28 and 29.

At the same time, a medium gas such as CF ₄ , O ₂ , Cl ₂ or the like is ejected from the ejection nozzles 50 and 51 disposed on both sides of the airtight container 20 toward the center of the airtight container 20, respectively. .

The ejected medium gas travels toward the center of the airtight container 20 as shown by arrows (c) and (d).
The gas reaches just below the beam portion 42 and is sucked through the gas suction port 120.

When the medium gas is supplied into the airtight container 20 in this manner, the medium gas is excited by the microwave, and plasmas 53 and 54 are generated below the microwave introduction windows 28 and 29, respectively.

The active species generated by the plasmas 53 and 54 are carried by the gas flow toward each of the gas exhaust systems 33 a and 33 b and the gas flow sucked into the gas suction port 120 to process the substrate 5. .

As described above, the active species are carried, so that the active species density becomes uniform over the entire surface of the substrate 5 in the hermetic container 20.

As described above, in the eleventh embodiment, since the gas suction port 120 is provided in the beam portion 42, the active species is supplied to the gas flow toward each gas exhaust system 33a, 33b and to the gas suction port 120. The active species density is carried over the entire surface of the substrate 5 in the hermetic container 20, and the etching rate and the ashing rate for the large-area substrate 5 are made uniform over the entire surface of the substrate 5. And the processing speed is increased.

(12) Next, a twelfth embodiment of the present invention will be described. The same parts as those in FIG. 58 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 33 is a configuration diagram of a process plasma processing apparatus.

The plasma chamber 2 is provided with a punching plate 130 for shielding microwaves.
The punching plate 130 is electrically connected to the plasma chamber 2 and is grounded.

[0365] The punching plate 130 is provided as shown in FIG.
As shown in the figure, the holder 35 and the curved surface holder 131 are curved to a predetermined radius of curvature protruding from the plasma chamber 2 toward the process chamber 3 and fixed to the plasma chamber 2.

The curved surface holder 131 is determined so that the thickness of the arc is, for example, about 10 mm. When the length is 50 cm, the radius of curvature of the punching plate 130 is about 6000 m.
m.

With such a configuration, the microwaves that have propagated in the two microwave waveguides 8 and 9 are emitted from the microwave emission ports 10 and 11, respectively, and passed through the microwave introduction windows 12 and 13 to generate plasma. It is introduced into the chamber 2.

At the same time, CF was passed through the gas supply ports 6 and 7.
₄ , a medium gas such as O ₂ and Cl ₂ is supplied into the plasma chamber 2, so that the medium gas is excited by the microwave to generate plasmas 19 and 20, respectively.

The active species generated by the plasmas 19 and 20 are carried by the gas flow toward the exhaust port 18 to process the substrate 5.

Here, when the plasma is generated, the plasma 19,
20 is supplied with energy on the order of kW by microwaves. This energy generates active species and heats the medium gas.

Then, the punching plate 1 is irradiated with the heated medium gas and radiation from the plasmas 19 and 20.
Heat 30.

When the heat from the plasmas 19 and 20 is applied to the punching plate 130 from the upper surface, the punching plate 130 is thermally deformed while maintaining the downward convex shape, and the upper surface extends to extend downward. Projection is reduced.

In such a deformation, since the downwardly convex shape is maintained, the shape of the plasma chamber 2 is not greatly distorted, and the discharge distribution maintains the initial state at the time of generation of the plasmas 19 and 20. You. An upwardly convex shape is also conceivable, but the distance between the microwave emission ports 10 and 11 and the punching plate 130 becomes short, and the density of the plasmas 19 and 20 may be extremely high.
A downward convex shape is more desirable.

Therefore, the active species density generated by the plasmas 19 and 20 becomes uniform over the entire surface of the substrate 5 in the process chamber 3.

As described above, in the twelfth embodiment, the punching plate 130 is provided by the holder 35 and the curved surface holder 131 so as to be curved to have a predetermined radius of curvature that becomes convex from the plasma chamber 2 toward the process chamber 3. Therefore, since the punching plate 130 is thermally deformed while maintaining the downwardly convex shape, the shape change of the plasma chamber 2 is suppressed to a minimum.

Thus, the discharge state does not change even with the elapse of the operation time, and the time change _Ko of the in-plane distribution of the processing amount on the substrate 5 is as shown in FIG. becomes less than one-half as compared with the time change K ₁ in the distribution.

The in-plane distribution rate of the processing amount on the substrate 5 has been increased from ± 10% to ± 20% with the passage of time in the related art, but remains approximately ± 10% in the apparatus of the present invention. Can be maintained.

In the method using the curved surface holder 131,
Compared to the method of embossing the punching plate 130, the cost can be specifically reduced by about 50,000 to 100,000 yen with one sheet.

The twelfth embodiment may be modified as follows.

For example, in the twelfth embodiment, only the curved surface in one direction of the punching plate 130 is curved by the curved surface holder 131. However, the present invention is not limited to this, and the two curved surface holders 131 and 132 are used as shown in FIG. The punching plate 130 may be curved with a curved surface in two directions by using.

Even if the substrate 5 is bent in two directions, the time variation of the in-plane distribution of the processing amount on the substrate 5 can be reduced.

(13) Next, a thirteenth embodiment of the present invention will be described. The same parts as those in FIG. 58 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 37 is a configuration diagram of a process plasma processing apparatus.

[0384] Above the process chamber 250, a microwave waveguide 251 is provided. The microwave waveguide 251 guides the microwave 253 oscillated from the microwave oscillator 252 into the process chamber 250, and a microwave tuner 254 is provided at an intermediate portion thereof.

[0385] On the lower surface of the microwave waveguide 251,
A microwave introduction window 255 is provided, and the microwave introduction window 255 is provided above the process chamber 250. Although not shown, a portion of the microwave waveguide 251 in contact with the microwave introduction window 255 has a slit shape.
Two microwave outlets are formed.

[0386] The microwave introduction window 255 is formed of a dielectric material such as quartz or alumina ceramic in order to efficiently introduce microwaves into the plasma chamber 250.

The plasma chamber 250 contains CF ₄ ,
A gas supply port 256 for supplying a medium gas such as O ₂ , Cl ₂ or the like to the inside of the plasma chamber 2 is provided on a side of the medium gas. In addition,
An exhaust system 257 is provided below the plasma chamber 250.

In the lower part of the process chamber 250,
A processing stage 258 is provided. On the processing stage 258, a substrate 5 such as a large-diameter semiconductor wafer or a liquid crystal substrate is mounted.

[0389] A punching plate 259 is disposed in the process chamber 250, and the punching plate 259 divides the inside of the process chamber 250 into the discharge chamber 260.
And a processing chamber 261.

The punching plate 259 is formed, for example, in the shape of a so-called bowl that protrudes in a convex shape toward the processing chamber 261, and the bottom thereof is supported by the bar 262.

As described above, the discharge chamber 260 is
The punching plate 259 is formed in a size and shape that constitute a resonator for microwaves.

The average dielectric constant is determined by the dimensions of the constituent materials (for example, windows and gases) in the resonator, the intrinsic dielectric constant, and the like.

The punching plate 259 is provided with a correction mechanism F for correcting the shape of the discharge chamber 260 in accordance with the temperature of the peripheral wall.

The correcting mechanism F detects the temperature in the vicinity of the plasma discharge portion in the discharge chamber 260 so that the discharge chamber 2
A stylus 263 for measuring the wall temperature of the stylus 60 and this stylus 2
A control unit 264 for controlling the movement of the beam 262 to an optimum position corresponding to the wall temperature of the discharge chamber 260 measured by the control unit 63; and receiving the control signal from the control unit 264, the beam 262 is moved. 259 to the discharge chamber 26
It comprises a beam moving mechanism 265 such as a screw feed for correcting the shape according to the temperature of the peripheral wall of 0 and optimizing the interval between the punching plate 259 and the substrate 5.

Here, the optimization control of the shape of the punching plate 259 by the control unit 264 is performed based on the temperature of the peripheral wall of the discharge chamber 260 measured by the measuring element 263 as described above. That is, as the peripheral wall temperature of the discharge chamber 260 increases, the average dielectric constant in the resonator decreases and the resonance length increases.

FIG. 38 shows the temperature of the discharge chamber 260 and the discharge chamber 26.
The relationship between the length of 0, in other words, the dimension relationship from the microwave introduction window 255 to the punching plate 259 is qualitatively shown. It can be seen from the figure that the bar 262 should be moved according to the temperature of the discharge chamber 260 in order to perform a stable operation following a change in the device temperature.

Accordingly, the control section 264 inputs the wall temperature of the discharge chamber 260 measured by the tracing stylus 263, and
The control signal for controlling the movement of the beam 262 to the optimum position according to the wall temperature of the discharge chamber 260 is transmitted based on the relationship between the temperature of the discharge chamber 260 and the length of the discharge chamber 260 shown in FIG.
Has the function of sending to

The punching plate 259 is provided so as to be slidable, for example, up and down with respect to the inner wall of the process chamber 250, and is also slidable in the horizontal direction.

Next, the operation of the device configured as described above will be described.

The microwave 253 propagating in the microwave waveguide 251 is emitted from the microwave emission port,
Process chamber 25 through microwave introduction window 255
Introduced in 0.

At the same time, the CF is supplied through the gas supply port 256.
₄ , a medium gas such as O ₂ and Cl ₂ is supplied into the process chamber 3, and the medium gas is excited by the microwave to generate plasma.

The density of the active species generated by the plasma is uniformly distributed in the process chamber 3, and the active species is transferred to the gas flow toward the exhaust system 257 and
To process.

When a plurality of substrates 5 are continuously processed as described above, the peripheral wall temperature of the discharge chamber 260 is considerably different between the first substrate and the latter half as shown in FIG.

[0404] Therefore, the tracing stylus 263 measures the wall temperature of the discharge chamber 260 and sends the temperature signal to the control unit 264.

The control section 264 inputs the wall temperature of the discharge chamber 260 measured by the tracing stylus 263, and based on the relationship between the temperature of the discharge chamber 260 and the length of the discharge chamber 260 shown in FIG. 262 suitable for the wall temperature of the building
And sends a control signal to the beam moving mechanism 265 to move the beam to the position of the beam 262.

[0406] When the control signal from the control section 264 is input, the beam moving mechanism 265 moves the beam 262 to the position of the beam 262 specified by the control signal.

[0407] Thus, the interval between the punching plate 259 and the substrate 5 is optimized, and a stable operation is maintained following the change in the wall temperature of the discharge chamber 260.

As described above, in the thirteenth embodiment, since the bar 262 is moved to the optimum position according to the wall temperature of the discharge chamber 260 measured by the tracing stylus 263, the substrate 5 When a plurality of sheets are continuously processed, the discharge chamber 2 is used for the first sheet and the second half.
Even if the peripheral wall temperature of the discharge chamber 60 is considerably different, a stable operation can be maintained following the change in the wall temperature of the discharge chamber 260. For example, it is possible to avoid instability of the operation that occurs when the device immediately after the start of the operation is completely cooled.

(14) Next, a fourteenth embodiment of the present invention will be described. The same parts as those in FIG. 37 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 40 is a configuration diagram of a process plasma processing apparatus.

[0411] Beam 2 supporting punching plate 259
Numeral 70 is formed of a shape memory alloy, the shape of which changes according to the ambient temperature of the bar 270, and has a function of optimizing the interval between the punching plate 259 and the substrate 5.

For example, in the process chamber 250,
Dozens of substrates 5 are continuously processed. In this case, the temperature of the discharge chamber 260, that is, the punching plate 259,
It increases with the number of processed sheets, and thereafter _changes at a constant value _Tc .

[0413] For this reason, the bar 270 is, for example, shown in FIG.
As shown in FIG. 1 (a), the optimum shape is obtained when the temperature is a constant value _Tc , and the deformed shape is obtained at room temperature as shown in FIG.

Next, the operation of the device configured as described above will be described.

[0415] The microwave 253 propagating in the microwave waveguide 251 is emitted from the microwave emission port,
Process chamber 25 through microwave introduction window 255
0, and at the same time, a medium gas such as CF ₄ , O ₂ , Cl ₂ is supplied into the process chamber 3 through the gas supply port 256, and this medium gas is excited by the microwave to generate plasma. I do.

[0416] The density of active species generated by the plasma is uniformly distributed in the process chamber 3, and the active species is conveyed to the gas flow toward the exhaust system 257, and the density of the active species is increased.
To process.

When a plurality of substrates 5 are continuously processed in this manner, the peripheral wall temperature of the discharge chamber 260 is reduced between the first substrate 5 and the latter substrate 5 as shown in FIG. Quite different.

In such a case, the punching plate 25
9 is formed of a shape memory alloy, the shape of which changes according to the ambient temperature.
For example, several tens of substrates 5 are continuously processed to form a discharge chamber 260.
When the temperature of has changed at a constant value T _c ,
For example, an optimal shape as shown in FIG.

[0419] Thus, the interval between the punching plate 259 and the substrate 5 is optimized, and a stable operation is maintained following changes in the wall temperature of the discharge chamber 260.

As described above, in the fourteenth embodiment, the crosspiece 270 supporting the punching plate 259 is formed of a shape memory alloy, and for example, several tens of substrates 5 are continuously processed to form the discharge chamber 260. Since the optimum shape is obtained when the temperature changes at the constant value _Tc , similar to the thirteenth embodiment, when a plurality of substrates 5 are continuously processed, the first shape is obtained. Even if the peripheral wall temperature of the discharge chamber 260 is significantly different between the first sheet and the latter half, a stable operation can be maintained following the change in the wall temperature of the discharge chamber 260. For example, it is possible to avoid instability of the operation that occurs when the device immediately after the start of the operation is completely cooled.

The bars 262 and 270 in the thirteenth and fourteenth embodiments are provided with a plurality of holes as shown in FIG. 42 (b) with respect to a punching plate 259 as shown in FIG. 42 (a). Cross-section punching plate 27 formed with
1 may be provided.

Then, the punching plate 27 for the crosspiece is
By disposing or rotatably disposing the position 1 with respect to the punching plate 259, the opening ratio of the holes can be changed when the beam punching plate 271 is combined with the punching plate 259.

(15) Next, a fifteenth embodiment of the present invention will be described. The same parts as those in FIG. 21 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 43 is a configuration diagram of a process plasma processing apparatus.

[0425] On the inner wall on both sides of the airtight container 60, a pair of first ejection nozzle groups 75 and 76 facing each other are provided.

Also, each beam portion 73, 74 in the airtight container 60
Are provided with a pair of second ejection nozzle groups 140 and 141 which are respectively opposed to each other.

The first ejection nozzle groups 75 and 76 and the second ejection nozzle groups 140 and 141
The medium gas such as F ₄ , O ₂ , Cl ₂ is jetted toward the center of the airtight container 60.

In addition, a third jet nozzle group 142 is provided on one beam portion 73 in the airtight container 60 with the first jet nozzle group 7.
5 and are arranged opposite to each other.

The other beam portion 74 in the airtight container 60 is provided with a fourth ejection nozzle group 143 and a second ejection nozzle group 7.
6 and are disposed opposite to each other.

[0430] Of these ejection nozzle groups, the first ejection nozzle groups 75 and 76 are commonly connected to the first gas pipe 144 as shown in the configuration diagram of the gas control system in FIG. 4 is the second gas pipe 14
5 are commonly connected.

Then, the second ejection nozzle groups 140 and 14
1 is commonly connected to the third gas pipe 146.

The first to third gas pipes 144 to 146
Are commonly connected to a gas source.

The first to third gas pipes 144 to 144
The 146 may not be connected in common, but may be separately connected to respective gas sources of a halogen-based gas such as CF ₄ and an oxygen gas.

The first to third gas pipes 144 to 146
Are provided with first to third control valves 147 to 149, respectively.

On the other hand, the control device 150 adjusts the degree of opening of the first to third control valves 147 to 149, and
143 have a function of controlling the ejection amount of the medium gas.

[0436] Specifically, near the end point of the processing on the substrate 5, the control device 150 controls the plurality of ejection nozzles 7
.. 143, a predetermined medium gas, for example, a halogen-based gas and an oxygen gas, has a function of increasing the ratio of the oxygen gas, that is, increasing the flow rate of the oxygen gas. doing.

When the etching rate is uniform, the controller 150 sets the flow ratio of the halogen-based gas and the oxygen gas to a predetermined ratio during the process, and sets the outer peripheral portion of the airtight container 60 near the end of the process. It has the function of increasing the proportion of oxygen gas in the part.

When the etching rate is non-uniform, the controller 150 increases the ratio of the halogen-based gas to the portion having a low etching rate in the hermetic container 60 during the process, and seals the gas near the end of the process. It has a function of increasing the ratio of oxygen gas in the outer peripheral portion in the container 60.

The control device 150 has a function of monitoring the end point of the process processing based on the pressure fluctuation in the hermetic container 60, the load of a pump for exhausting gas from the hermetic container 60, or the rotation speed of the pump. I have.

Next, the operation of the device configured as described above will be described.

In the process manufacturing method using the process plasma apparatus, when the metal film is etched as described above, for example, as shown in FIG. Is processed to have a trapezoidal shape.

The trapezoidal shape of the metal film 37 is as follows.
In the etching process, not only the metal film 37 but also the resist 38 are simultaneously etched.

Therefore, in such process manufacturing, it is common to use two types of gases, a halogen-based gas such as CF ₄ for etching the metal film 37 and an oxygen gas for etching the resist 38. .

Although the trapezoidal shape of the metal film 37 changes depending on the flow ratio of these gas species, what is generally important is the taper angle of the trapezoidal shape.

Here, the relationship between the flow rate ratio and the etching characteristics is summarized as follows.

When the amount of halogen-based gas such as CF ₄ increases, the processing speed (etching rate) increases, and the taper angle increases.

When the amount of oxygen gas increases, the processing speed decreases and the taper angle decreases.

FIG. 45 shows the relationship between the taper angle and the oxygen gas flow rate ratio. The taper angle decreases as the oxygen flow rate increases.

FIG. 46 shows the relationship between the etching rate and the oxygen gas flow rate ratio. As the oxygen flow rate increases, the rate for the metal film decreases and the rate for the resist increases.

FIG. 47 shows the relationship between the etching time and the taper angle, and the taper angle increases as the etching time elapses.

On the other hand, immediately before the end of the etching, since the process has been completed in the portion of the substrate 5 where the etching rate is high, the amount of the metal film to be etched is sharply reduced.

For this reason, in the time zone immediately before the end of the etching, the trapezoidal side surface of the metal film formed by the etching is easily etched, and the taper angle tends to increase. FIG. 48 shows the taper angle with respect to the measurement position on the substrate 5 in this example, and the taper angle is larger at the peripheral portion than at the central portion on the substrate 5.

Accordingly, the gas flow ratio near the end of the process is set to be larger than the oxygen gas flow in the case of performing the normal process.

The microwaves propagating through the microwave waveguides 62 to 64 are respectively transmitted to the microwave outlets 67 to 64.
Emitted from 69, three microwave introduction windows 70-72
Through the airtight container 60.

At the same time, CF ₄ gas and oxygen gas are jetted from the jet nozzles 75, 76,.

[0456] In this case, CF ₄ gas and oxygen gas, each jet nozzles 75 and 76, ... 143 mixed and ejected from, or CF ₄ jet nozzles 75, 76 for each type of gas and oxygen gas, ... 143 are changed and are separately ejected into the airtight container 60. These ejected medium gases are
It flows uniformly in the airtight container 60.

[0457] With such a CF ₄ gas and oxygen gas is supplied into the airtight chamber 60, these CF ₄ gas and oxygen gas is excited by a microwave, under the three microwave introduction windows 70-72 Plasma is generated respectively.

[0458] The active species generated by these plasmas are carried by the gas flows toward the respective gas exhaust systems 33a and 33b, and the substrate 5 is processed.

At this time, the active species has a uniform density over the entire surface of the substrate 5 in the airtight container 60.

[0460] In the course of such a process, the control device 150 controls the pressure fluctuation in the hermetic container 60,
The end point of the process is monitored by the load of the pump for exhausting the gas or the rotation speed of the pump.

That is, as shown in FIG. 49, before the process is performed, the CF ₄ gas and oxygen gas introduced into the hermetic container 60 are balanced with the exhaust gas, and the inside of the hermetic container 60 is kept at a constant pressure.

When the process starts, the CF ₄ introduced
Since a reaction product gas is generated in addition to the gas and the oxygen gas, the pressure in the hermetic container 60 increases.

Thereafter, in order to keep the pressure in the airtight container 60 constant, the number of rotations of the pump increases, and the pressure in the airtight container 60 returns to the target value and becomes constant.

[0464] As the process ends, the generation of the reaction product gas decreases, and the pressure in the airtight container 60 decreases.

Therefore, the control device 150 controls the airtight container 60
Monitoring the pressure variation in the inner, the end point of the process treatment, to increase the flow rate of the oxygen gas by adjusting the opening degree of the first to third control valve 147-149, or reduces the flow rate of CF _4.

As shown in FIG. 50, the cross-sectional shape of the metal film 37 has a trapezoidal shape finally having a target taper angle at the center and the peripheral portion of the substrate 5 as shown in the relationship of the taper angle with respect to the process time. It is processed to be.

In such a case, each ejection nozzle 75, 7
By adjusting the arrangement positions of 6,... 143, the taper angle is processed into a trapezoidal shape at the central portion and the peripheral portion of the substrate 5 so as to finally coincide with the target value as shown in FIG.

Although the example in which the taper angle at the central portion is smaller than that at the peripheral portion has been described, the peripheral portion may be higher depending on the characteristics of the device used. However, they have the same problem in terms of low uniformity.

On the other hand, when a process is performed on a large-area substrate 5 such as a large-diameter semiconductor wafer or a liquid crystal substrate, since the plasma density in the plane of the substrate 5 to be processed is not uniform, the shape of the obtained metal film is limited. May vary within.

Although the uniformity of the etching rate in the plane of the substrate 5 is good, the taper angle of the metal film is small.
When the central part and the peripheral part are different, the control device 150
The degree of opening of the first to third control valves 147 to 149 is adjusted, and etching is performed at a predetermined flow rate ratio between a halogen-based gas such as CF ₄ and an oxygen gas during the process.

Then, the control device 150 increases the ratio of the oxygen gas in the outer peripheral portion in the airtight container 60 near the end point of the process.

When the uniformity of the in-plane processing rate of the substrate 5 is somewhat poor, the control device 150 increases the ratio of the halogen-based gas to the low processing rate portion in the hermetic container 60 during the processing. Perform etching.

[0473] Then, the control device 150 increases the ratio of the oxygen gas in the outer peripheral portion in the airtight container 60 near the end point of the process.

As described above, in the fifteenth embodiment, the opening degree of the first to third control valves 147 to 149 is adjusted so that the ejection amount of the medium gas from each ejection nozzle 75, 76,. Is controlled, so that a metal film can be formed in a trapezoidal shape having a required taper angle.

Therefore, if such a processing method is applied, not only on a liquid crystal substrate but also on manufacturing a semiconductor device on a large-diameter semiconductor wafer, for example, a taper angle which requires various layers formed on a Si substrate is required. Can be formed in a trapezoidal shape.

[0476]

As described above in detail, according to the present invention, it is possible to provide a plasma processing apparatus capable of uniformly distributing the active species density over a large-area workpiece.

Further, according to the present invention, it is possible to provide a plasma processing apparatus capable of improving the beam portion and uniformly distributing the active species density.

Further, according to the present invention, it is possible to provide a plasma processing apparatus capable of maintaining stable plasma even when the operating gas pressure in the plasma source is lowered.

Further, according to the present invention, the interval length of the microwave emission port can be arbitrarily changed from outside the process chamber.
A stable plasma discharge according to each process condition is possible,
It is possible to provide a plasma processing apparatus capable of obtaining long-time stable large-area and high-quality processing characteristics.

Further, according to the present invention, it is possible to provide a plasma processing apparatus capable of uniformly distributing the active species density by appropriately arranging the ejection nozzles.

Further, according to the present invention, it is possible to provide a plasma processing apparatus capable of uniformly distributing the active species density and performing necessary processing on a workpiece.

Further, according to the present invention, it is possible to provide a plasma processing apparatus capable of uniformly distributing active species density without being affected by thermal deformation of a punching plate.

Further, according to the present invention, it is possible to provide a plasma processing apparatus capable of adjusting the shape of the punching plate to obtain stable operation characteristics.

Further, according to the present invention, it is possible to provide a method of manufacturing a semiconductor device which can obtain a uniform active species density and can be processed to a required taper angle.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a first embodiment of a plasma processing apparatus according to the present invention.

FIG. 2 is a cross-sectional view of an external reinforcing portion and a plasma chamber portion.

FIG. 3 is a configuration diagram showing a second embodiment of the process plasma processing apparatus according to the present invention.

FIG. 4 is a configuration diagram of a microwave emission port in the device.

FIG. 5 is a configuration diagram when a process plasma processing apparatus according to the present invention is applied to processing of a large-area substrate.

FIG. 6 is a layout diagram of each magnet in the same device.

FIG. 7 is a diagram showing the magnetic field strength of a magnet and each type of arrangement thereof.

FIG. 8 is a diagram showing a relationship between an electron temperature and a Rama radius ρ.

FIG. 9 is a diagram showing a mean free path in each pressure state.

FIG. 10 is a diagram showing the expansion of a stable operation range of plasma.

FIG. 11 is a configuration diagram of a process plasma processing apparatus showing another application example.

FIG. 12 is a configuration diagram showing a third embodiment of the process plasma processing apparatus according to the present invention.

FIG. 13 is a specific configuration diagram of a microwave emission port of the device.

FIG. 14 is a view showing a variable action of a gap length between two microwave outlets of the device.

FIG. 15 is a specific configuration diagram of a microwave emission port in a process plasma processing apparatus according to a fourth embodiment of the present invention.

FIG. 16 is a view showing a variable action of a gap length between two microwave emission ports of the device.

FIG. 17 is a configuration diagram showing a modified row of the process plasma processing apparatus according to the present invention.

FIG. 18 is a configuration diagram showing a fifth embodiment of the plasma processing apparatus according to the present invention.

FIG. 19 is a configuration diagram of the device as viewed from above.

FIG. 20 is a diagram showing an improvement in an etching rate.

FIG. 21 is a configuration diagram showing a sixth embodiment of the plasma processing apparatus according to the present invention.

FIG. 22 is a configuration diagram of the device as viewed from above.

FIG. 23 is a configuration diagram showing a seventh embodiment of the plasma processing apparatus according to the present invention.

FIG. 24 is a configuration diagram of the device as viewed from above.

FIG. 25 is a configuration diagram showing an eighth embodiment of the plasma processing apparatus according to the present invention.

FIG. 26 is a configuration diagram of the device as viewed from above.

FIG. 27 is a configuration diagram showing a ninth embodiment of the plasma processing apparatus according to the present invention.

FIG. 28 is a configuration diagram of the device as viewed from above.

FIG. 29 is a configuration diagram showing a tenth embodiment of the plasma processing apparatus according to the present invention.

FIG. 30 is a configuration diagram of the device as viewed from above.

FIG. 31 is a configuration diagram showing an eleventh embodiment of the plasma processing apparatus according to the present invention.

FIG. 32 is a configuration diagram of the device as viewed from above.

FIG. 33 is a configuration diagram showing a twelfth embodiment of the plasma processing apparatus according to the present invention.

FIG. 34 is a view showing a curved punching plate in the apparatus.

FIG. 35 is a diagram showing a temporal change of an in-plane distribution of a processing amount on a substrate.

FIG. 36 is a view showing another holder of the punching plate.

FIG. 37 is a configuration diagram showing a thirteenth embodiment of the plasma processing apparatus according to the present invention.

FIG. 38 is a view qualitatively showing a relationship between a discharge chamber temperature and a discharge chamber length.

FIG. 39 is a view showing the relationship between the number of substrates processed and the discharge chamber temperature.

FIG. 40 is a configuration diagram showing a plasma processing apparatus according to a fourteenth embodiment of the present invention.

FIG. 41 is a view showing the operation of a punching plate formed of a shape memory alloy.

FIG. 42 is a configuration diagram of a punching plate for a crosspiece.

FIG. 43 is a configuration diagram showing a fifteenth embodiment of the plasma processing apparatus according to the present invention.

FIG. 44 is a configuration diagram showing a medium gas control system.

FIG. 45 is a view showing a relationship between a taper angle and an oxygen gas flow ratio.

FIG. 46 is a graph showing a relationship between an oxygen gas flow ratio and an etching rate.

FIG. 47 is a view showing a relationship between a taper angle and an etching time.

FIG. 48 is a view showing a taper angle with respect to a measurement position on a substrate.

FIG. 49 is a view showing the progress of the process.

FIG. 50 is a view showing a relationship between a process time and a taper angle.

FIG. 51 is a view showing a relationship between a process time and a taper angle.

FIG. 52 is a configuration diagram of a conventional process plasma apparatus having two plasma generation units.

FIG. 53 is a schematic view showing a rectangular parallelepiped cavity resonator.

FIG. 54 is a view showing bending of a beam portion.

FIG. 55 is a configuration diagram of a conventional process plasma apparatus.

FIG. 56 is a configuration diagram of the device as viewed from above.

FIG. 57 is a view showing a decrease in an etching rate below a beam portion in an airtight container.

FIG. 58 is a view showing the arrangement of punching plates in a process plasma apparatus.

FIG. 59 is a diagram showing density variation of plasma due to thermal deformation of a punching plate.

FIG. 60 is a diagram showing an in-plane distribution of a processing amount.

FIG. 61 is a view showing an etching step of a metal film by a conventional process manufacturing method.

FIG. 62 is a view showing a difference in a processing amount of a taper angle of a metal film in an airtight container.

[Explanation of symbols]

1, 20, 60, 90: airtight container, 2: plasma chamber, 3: process chamber, 4, 21, 61: processing stage, 5: workpiece (substrate), 6, 7: gas supply port, 8, 9 , 22, 23, 62, 63, 64 ... microwave waveguide, 10, 11, 26, 27 ... microwave emission port, 12, 13, 28, 29, 70, 71, 72 ... microwave introduction window, 15 ... Microwave resonance end, 40 ... external reinforcing part, 50, 51, 75, 76, 110, 111, 112, 1
13: ejection nozzle, 52, 73, 74: beam portion, 75, 76, 80, 81: ejection nozzle group, 104, 105, 106, 107: ejection nozzle group, 120: gas suction port, 130: punching plate, 131 ... curved surface holder, 147 to 149 ... control valve, 150 ... control device, 200 ... plasma source base plate, 201 ... microwave introduction window, 202 ... microwave introduction tube, 203, 204, 220, 221 ... microwave discharge port, 206, 208 to 210: magnet, 222: slot antenna, 225, 226: metal plate, 227, 228: metal rod, 229, 230: guide hole, 240: slot antenna, 242: square material, 243a to 243f: Metal rod, 250: process chamber, 251: microwave waveguide, 252: microwave oscillator 255 ... microwave introducing window, 259 ... punching plate, 262,270 ... crosspiece, 263 ... measuring element, 264 ... controller, 265 ... bar moving mechanism.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kaoru Taki 33 Shinisogocho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside Toshiba Production Technology Research Institute (72) Inventor Noboru Okamoto 33 Shinisogocho, Isogo-ku, Yokohama-shi, Kanagawa Address Co., Ltd., Toshiba Production Technology Laboratory

Claims (33)

[Claims] 1. A medium gas is supplied into the hermetic container, and a microwave is introduced into the hermetic container from a plurality of microwave introduction portions to generate plasma, and active species generated by the plasma generate the plasma. A plasma processing apparatus for processing an object to be processed therein, an external reinforcing portion provided outside the airtight container, and a microwave connected to the external reinforcing portion and constituting the microwave introduction portion in the airtight container. A plasma processing apparatus, comprising: a beam structure that supports a wave introduction window. 2. A medium gas is supplied into the hermetic container, and a microwave is introduced into the hermetic container from a microwave introduction portion to generate plasma, and active species generated by the plasma generate plasma in the hermetic container. A plasma processing apparatus for processing an object to be processed, wherein a magnetic field generating means for applying a magnetic field to the plasma is provided near the microwave introduction unit. 3. A medium gas is supplied into the hermetic container, and microwaves are introduced into the hermetic container from a plurality of microwave introduction portions to generate plasma, and the active species generated by the plasma generates the plasma. A plasma processing apparatus for processing an object to be processed therein, an external reinforcing portion provided outside the airtight container, and a microwave connected to the external reinforcing portion and constituting the microwave introduction portion in the airtight container. A plasma processing apparatus, comprising: a beam structure that supports a wave introduction window; and a magnetic field generator that is provided in the beam structure and applies a magnetic field to the plasma. 4. A medium gas is supplied into the hermetic container, and a microwave is introduced into the hermetic container through a microwave introduction window from a microwave introduction pipe to generate plasma, and the active species generated by the plasma generate plasma. In a plasma processing apparatus for processing an object to be processed in the hermetic container, a magnetic field generating means provided near the microwave introduction window and applying a magnetic field to the plasma; and the microwave introduction in the microwave introduction tube. A plasma processing apparatus, comprising: at least two microwave emission ports formed at a portion connected to a window and configured such that an interval length between them is variable. 5. The external reinforcing portion has a longitudinal elastic modulus of 8.0.
The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is formed of a material of × 10 ³ kg / mm ² or more. 6. The plasma processing apparatus according to claim 1, wherein the external reinforcing portion is formed of stainless steel or iron. 7. The beam structure portion is configured to satisfy a relationship of d / t ≧ 10, where t is a thickness in a direction in which the microwave is introduced, and d is a pitch of the microwave introduction portion. 4. The plasma processing apparatus according to claim 1, wherein: 8. The beam structure has a relation of d / g ≧ 3, where d is a pitch of the microwave introduction part and g is a width of the microwave introduction part in the pitch direction of the beam structure. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is configured to satisfy the condition. 9. The beam structure portion has a thickness t in the microwave introduction direction, and a length f in the microwave introduction direction from the microwave introduction portion to the object to be processed, f / 4. The plasma processing apparatus according to claim 1, wherein a relationship of t ≧ 3 is satisfied. 10. The apparatus according to claim 2, wherein said magnetic field generation means is provided along a longitudinal direction of at least two microwave emission ports formed in said microwave introduction part. The plasma processing apparatus as described in the above. 11. The plasma processing apparatus according to claim 2, wherein the magnetic field generating means is provided in any of the airtight container, the beam structure, and the outside of the airtight container. . 12. The plasma processing apparatus according to claim 4, wherein an interval between at least two of the microwave emission ports is variable according to a process condition in the hermetic container. 13. An object to be processed in the hermetic container by supplying a medium gas into the hermetic container and introducing microwaves to generate plasma in at least two plasma generating portions, and active species generated by the plasma. A plasma processing apparatus comprising: a plurality of ejection nozzles disposed at least in the airtight container so as to face each other, and each of the ejection nozzles ejecting the medium gas toward a central portion in the airtight container. apparatus. 14. The plasma processing apparatus according to claim 13, wherein the plurality of ejection nozzles are arranged on both sides in the hermetic container via a plurality of the plasma generating units. 15. An ejection nozzle group comprising a plurality of ejection nozzles arranged opposite to each other on both sides in the airtight container and the beam structure, and a plurality of sets of the ejection nozzle groups are provided in the airtight container. The plasma processing apparatus according to claim 13, wherein the plasma processing apparatus is disposed in the inside. 16. The plurality of ejection nozzles include a first ejection nozzle group arranged on both sides of the airtight container so as to face each other, and a second ejection nozzle group arranged on the beam structure. 14. The plasma according to claim 13, wherein the ejection amount of the medium gas from the second ejection nozzle group is set to be smaller than the ejection amount of the medium gas from the second ejection nozzle group. Processing equipment. 17. The plurality of ejection nozzles include a first ejection nozzle group arranged on both sides of the airtight container so as to face each other, and a second ejection nozzle group arranged on the beam structure. 14. The plasma processing apparatus according to claim 13, wherein the ejection nozzle diameter of the second ejection nozzle group is set smaller than the ejection nozzle diameter of the second ejection nozzle group. 18. The plurality of ejection nozzles include a first ejection nozzle group arranged on both sides of the airtight container so as to face each other, and a second ejection nozzle group arranged on the beam structure. 14. The plasma processing apparatus according to claim 13, wherein the number of ejection nozzles of the second ejection nozzle group is set to be smaller than the number of ejection nozzles of the second ejection nozzle group. 19. A medium gas is supplied into the hermetic container, and microwaves are introduced into the hermetic container from a plurality of microwave introduction portions to generate plasma, and the hermetic container is generated by active species generated by the plasma. A plasma processing apparatus for processing an object to be processed in the hermetic container, a plurality of ejection nozzles arranged to at least face each other in the hermetic container and each ejecting the medium gas toward a central portion in the hermetic container; Is disposed at the center of the object side,
A gas suction port for sucking gas in the airtight container,
A plasma processing apparatus comprising: 20. A medium gas is supplied into the hermetic container, and a microwave is introduced into the hermetic container from a plurality of microwave introduction portions to generate plasma, and the active species generated by the plasma generates the plasma. In a plasma processing apparatus for processing an object to be processed, a plurality of ejection nozzles arranged at least in the airtight container to oppose each other and ejecting the medium gas toward a central portion in the airtight container, respectively, A plasma processing apparatus, comprising: a control unit that controls an ejection amount. 21. The control means has a function of increasing a flow rate of a predetermined medium gas among the medium gases ejected from a plurality of ejection nozzles near an end point of the process processing on the object to be processed. 21. The plasma processing apparatus according to claim 20, wherein: 22. The control means has a function of increasing the ratio of the oxygen gas in the halogen-based gas and the oxygen gas ejected from the plurality of ejection nozzles near an end point of the process. 21. The plasma processing apparatus according to claim 20, wherein: 23. A medium gas is supplied into the hermetic container, and microwaves are introduced into the hermetic container from a plurality of microwave introduction portions to generate plasma, and the active species generated by the plasma are supplied to the microwave. In a plasma processing apparatus configured to guide an object to be processed through a punching plate that shields a wave to process the object, the punching plate may have a convex shape in a direction from the microwave introduction unit to the object. A plasma processing apparatus characterized in that the plasma processing apparatus is curved. 24. The plasma processing apparatus according to claim 23, wherein the punching plate is held by being curved to a predetermined radius of curvature by a curved surface holder. 25. The plasma processing apparatus according to claim 23, further comprising a correction mechanism for correcting the shape of the punching plate. 26. A temperature sensor for detecting a temperature in the vicinity of a plasma discharge portion in the hermetic container, a crosspiece for holding the punching plate and correcting the shape of the punching plate; A moving mechanism that moves the crosspiece in accordance with the temperature in the vicinity of the plasma discharge portion detected by a temperature sensor, corrects the shape of the punching plate, and optimizes the interval between the punching plate and the workpiece, 26. The plasma processing apparatus according to claim 25, comprising: 27. The plasma processing apparatus according to claim 26, wherein said crosspiece is formed of a shape memory alloy. 28. The bar according to claim 2, wherein a plurality of holes having a predetermined size are formed in the crosspiece, and a predetermined opening ratio is obtained by combining the holes with the punching plate.
7. The plasma processing apparatus according to 6. 29. A plasma is generated by supplying a plurality of types of medium gases into the airtight container and introducing a microwave,
A method of manufacturing a semiconductor device, comprising: generating an active species by using the plasma; and performing a process on the semiconductor thin film using the active species. A method for manufacturing a semiconductor device, characterized in that at least one of the flow rates is increased to change the flow rate ratio of each medium gas. 30. When a halogen-based gas and an oxygen gas are supplied to the hermetic container as the medium gas, the ratio of the oxygen gas in the flow ratio of each medium gas is increased near the end point of the process. 30. The method of manufacturing a semiconductor device according to claim 29, wherein: 31. When the rate of the process for the semiconductor thin film is uniform, the flow ratio between the halogen-based gas and the oxygen gas is set to a predetermined ratio during the process, and in the hermetic container near the end point of the process. 31. The method of manufacturing a semiconductor device according to claim 30, wherein the ratio of the oxygen gas at the outer edge of the semiconductor device is increased. 32. When the processing rate of the semiconductor thin film is not uniform, the ratio of the halogen-based gas to a portion of the semiconductor thin film having a low processing rate is increased during the processing, and 31. The method of manufacturing a semiconductor device according to claim 30, wherein a ratio of the oxygen gas at an outer edge portion in the airtight container is increased near an end point. 33. An end point of the process is monitored by a pressure fluctuation in the hermetic container, a load of a pump for exhausting gas from the hermetic container, or a rotation speed of the pump. Of manufacturing a semiconductor device.