JPH1058310A - Chemical-mechanical polishing method and device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To polish the whole or part of the surface of a substrate or the like as a polishing object with high precision by enlarging an effective polishing area via the use of a multiple ring strip type polishing pad. SOLUTION: A polishing tool unit 10 having a bore smaller than the bore of the polished surface of a workpiece like a substrate is formed out of a polishing pad holding parts 12a and 12b for holding a plurality of ring strip type polishing pads 11a and 11b formed to have different diameters and arranged coaxially, as well as a plurality of cylindrical axis parts 13a and 13b formed to be continuous to the polishing pad holding parts 12a and 12b. Also, drive mechanisms 14a and 14b for rotation and linear motion in common are respectively connected to the cylindrical axis parts 13a and 13b. Furthermore, the multiple ring strip type polishing pads 11a and 11b are kept in contact with the polished surface of a substrate on the operation of the drive mechanisms 14a and 14b. Thereafter, both pads 11a and 11b are rapidly rotated at the same peripheral velocity under the application of the prescribed pressing force, and the whole or part of the polished surface of the substrate is polished in a chemical-mechanical way under the feed of an abrasive thereto.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing method and apparatus for polishing a substrate such as a wafer with high precision and efficiency.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have become ultra-miniaturized and highly stepped, and accordingly, SOI substrates, Si, GaAs
It is required to flatten the surface of a substrate such as a semiconductor wafer of s, InP or the like with high precision. As a processing means for flattening the surface of a substrate such as a wafer with high precision, a chemical mechanical polishing (CMP) apparatus as described below is known.

As shown in FIG. 6, a conventional chemical mechanical polishing apparatus includes a workpiece rotating table 103 for detachably holding a substrate 104 such as a wafer on a lower surface of the drawing, and a rotating table 103 below the workpiece rotating table 103. Substrate 10 arranged opposite
A polishing tool rotating table 101 integrally provided with a polishing pad 102 having a larger diameter than the diameter of No. 4 and an abrasive (polishing slurry) for supplying an abrasive (polishing slurry) 107 to the upper surface of the polishing pad 102 Supply nozzle 10
6 while supplying a polishing agent (polishing slurry) 107 to an upper surface of a polishing pad 102 provided integrally with a polishing tool rotating table 101 which is rotated in the direction of arrow A.
Rotation axis 1 of the worktable rotation table 103 holding the workpiece 04
The substrate 104 is pressed against the polishing pad 102 by applying a processing pressure in the axial direction indicated by a white arrow to the substrate 104.
The workpiece rotating table 103 is provided with a rotating motion indicated by an arrow B and a swinging motion indicated by an arrow C to polish the workpiece.

[0004]

However, in the above-mentioned prior art, the diameter of a polishing tool rotating table provided with a polishing pad integrally therewith is larger than the diameter of a substrate. There is a problem to be solved.

(1) The entire polishing apparatus including the polishing tool rotating table becomes large, and when the polishing tool rotating table is rotated at a high speed, vibration is generated and the surface to be polished of the substrate as a workpiece can be polished with high precision. Therefore, the polishing tool rotating table cannot be rotated at a high speed. As a result, not only cannot the polishing rate (removal amount per unit time) be increased, but also the cost increases.

(2) Since the entire surface of the surface to be polished of the substrate to be processed is polished in a state of being in contact with the polishing surface of the polishing pad, if there is a local flaw on the surface to be polished of the substrate, It is difficult to efficiently remove such local flaws.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned unresolved problems of the prior art, and is capable of high-speed and high-precision polishing regardless of the presence or absence of local scratches on a surface to be polished of a workpiece. It is an object of the present invention to provide a chemical mechanical polishing method and a chemical mechanical polishing method capable of efficiently performing the entire surface polishing or the partial polishing by increasing the effective contact polishing area, and improving the uniformity of the polishing. Is what you do.

[0008]

In order to achieve the above object, a chemical mechanical polishing method according to the present invention comprises the steps of: bringing a polishing tool into contact with a surface to be polished of a workpiece under a predetermined processing pressure; In the chemical mechanical polishing method of performing polishing while supplying an abrasive during the process, a multi-wheel comprising a plurality of annular polishing pads having a smaller diameter than the surface to be polished of the workpiece and arranged coaxially and having different diameters. Polishing is performed by using a belt-shaped polishing pad and rotating the multi-zoned belt-shaped polishing pad in contact with the surface to be polished of the workpiece.

In the chemical mechanical polishing method of the present invention, it is preferable that the plurality of annular polishing pads are individually driven to rotate, and the multiple annular polishing pads are revolved for polishing. Is preferred. Further, the surface to be polished of the workpiece can be entirely polished or partially polished.

In order to achieve the above object, a chemical mechanical polishing apparatus according to the present invention provides a polishing tool in which a polishing tool is brought into contact with a surface to be polished of a workpiece under a predetermined processing pressure, and a polishing agent is interposed therebetween. In the chemical mechanical polishing apparatus for performing polishing while supplying the polishing tool, the polishing tool is continuous with a plurality of annular polishing pad holding portions having different diameters arranged coaxially and the plurality of annular polishing pad holding portions, respectively. And a plurality of cylindrical shafts arranged coaxially.

Further, in the chemical mechanical polishing apparatus of the present invention, the polishing tool is brought into contact with a surface to be polished of a workpiece while applying a predetermined processing pressure, and while the polishing tool is being supplied, the polishing tool is In a chemical mechanical polishing apparatus that performs polishing by revolving and revolving the polishing surface of, the polishing tool,
A plurality of annular polishing pad holders having different diameters arranged coaxially and a plurality of cylindrical shaft portions arranged coaxially and respectively continuous with the plurality of annular polishing pad holders; A rotary drive mechanism and a linear drive mechanism for rotating the respective annular belt-shaped polishing pads and moving them in the axial direction are connected to each of the cylindrical shaft portions.

Further, the chemical mechanical polishing apparatus of the present invention comprises a rotary table for detachably holding and rotating a workpiece, a slider for supporting the rotary table and moving it in the radial direction, and a polishing tool. Revolving table for rotatably and axially movably supporting the revolving table, a revolving drive mechanism for revolving the revolving table, and a rotating drive mechanism for rotating the polishing surface of the polishing tool and moving it in the axial direction A chemical-mechanical polishing method, wherein the polishing surface of the polishing tool is brought into contact with the surface to be polished of the workpiece while applying a predetermined processing pressure, and polishing is performed while supplying an abrasive during the polishing. In the apparatus, the polishing tool includes a plurality of annular polishing pad holders having different diameters arranged coaxially and a plurality of coaxially arranged continuous with the plurality of annular polishing pad holders. Of it consists of a cylindrical shaft portion, characterized in that connecting the rotation driving mechanism and a linear drive mechanism in each of a plurality of cylindrical shaft portion disposed in said coaxially.

Further, the chemical mechanical polishing apparatus according to the present invention comprises a rotary table for detachably holding and rotating a workpiece, a slider for supporting the rotary table and moving in a radial direction, and a plurality of sliders. A revolving table for arranging the polishing tools at equal intervals in the circumferential direction, rotatably and movably in the axial direction, a revolving drive mechanism for revolving the revolving table, and a polishing surface of the polishing tool. A rotation drive mechanism and a linear drive mechanism for rotating and moving in the axial direction are provided, and at least one polishing surface of the plurality of polishing tools is applied with a predetermined processing pressure to the surface to be polished of the workpiece. In the chemical-mechanical polishing apparatus for performing the polishing while supplying the abrasive during the contact, the plurality of polishing tools,
Consisting of a plurality of annular polishing pad holding portions having different diameters arranged coaxially and a plurality of cylindrical shaft portions arranged coaxially and respectively continuous with the plurality of annular polishing pad holding portions, A rotary drive mechanism and a linear drive mechanism are connected to each of the plurality of cylindrical shafts arranged coaxially.

[0014]

In a polishing tool having a smaller diameter than a substrate of a workpiece, a polishing surface is constituted by a multi-zone-shaped polishing pad comprising a plurality of annular-shaped polishing pads having different diameters arranged coaxially. Each of the ring-shaped polishing pads is configured to be capable of rotating independently and independently, and configured to be capable of being driven to move in the axial direction. Therefore, even if each annular polishing pad is rotated at a high speed, no vibration is generated, and by making the rotation speed of each annular polishing pad the same, the effective polishing area can be increased, and further, each annular polishing can be performed. Since the pressing pressure of the pad against the surface to be polished can be adjusted individually, the optimum processing pressure can also be set individually according to the state of the surface to be polished. By arranging a plurality of multiple annular polishing pads, the entire surface of the surface to be polished of the substrate can be polished efficiently at high speed, and each annular polishing pad partially abuts on the surface to be polished. Polishing can be performed with high precision irrespective of the presence or absence of local scratches on the surface to be polished.

[0015]

Embodiments of the present invention will be described with reference to the drawings.

As shown in FIG. 1, a chemical mechanical polishing apparatus according to a first embodiment of the present invention, as shown in FIG. each polishing pad and polishing stations E _1, polishing a plurality of abrasive tool unit 10, 10, 10 arranged at equal intervals in the circumferential direction in the illustrated upper part of the polishing station E ₁ supports the tool unit for causing the and a polishing head E ₂ for revolving and rotating the.

As shown in FIG. 1, a polishing station E ₁ is provided with a slider 4 for supporting a rotary table 5 and moving it in a radial direction on an upper surface of a guide table 3 provided integrally on a base 1. A linear drive mechanism (not shown) for moving the slider 4, a rotary table 5 in which a rotary shaft 6 is rotatably supported by the slider 4 via a radial bearing and a thrust bearing, and a rotary table 5 for rotating the rotary table 5. A rotation drive mechanism (not shown) is provided, and is configured so that the substrate W can be detachably held on the upper surface of the turntable 5 and rotated, and can be moved in the radial direction.

The polishing head E ₂ is rotatably supported via a radial bearing and a thrust bearing on a lower yoke 2 a projecting above the polishing station E ₁ of a support member 2 erected on the base 1. Three polishing tool units 10, 10, which are arranged at equal intervals in the circumferential direction on the table 8 and the revolution table 8, and each of which has a shaft 13 supported rotatably and axially movable via a bearing. , 10
It has. The revolving table 8 is fixed to the output shaft of the revolving table rotation drive mechanism 7 supported by the upper yoke 2b of the support member 2, revolves at a predetermined rotation speed, and revolves the polishing tool units 10, 10, 10. .

Three polishing tool units 10, 10, 10
All have the same structure, and the structure will be described with reference to FIGS. The polishing tool unit 10 includes an annular polishing pad holding portion 12 for holding an annular polishing pad 11 having a smaller diameter than the substrate W and a cylindrical shaft portion 13, and an outer cylindrical shaft portion 13 of the shaft portion 13.
a is rotatably and axially movable via a bearing 15a with respect to a lower support 8a provided integrally with the revolving table 8, and the inner cylindrical shaft portion 13b has an outer cylindrical shape. It is provided coaxially in the shaft portion 13a, and is provided rotatably and axially movable with respect to the outer cylindrical shaft portion 13a via bearings 15b, 15b. Below the cylindrical shaft portions 13a and 13b, annular polishing pad holders 12a and 12b each having a desired diameter are formed, and on the lower surfaces of the annular polishing pad holders 12a and 12b, annular polishing pads are provided. Pads 11a and 11b are attached, respectively, and these annular polishing pads 11a and 11b are
As shown in FIG. 2 and FIG. 3, they are ring-shaped and have different diameters, and are arranged coaxially.

On the other hand, a rotary drive mechanism and a linear drive mechanism 14a, 14b attached to the revolving table 8 are connected to upper ends of the cylindrical shaft portions 13a, 13b, respectively. Thereby, the annular polishing pads 11a and 11b are
By the rotation drive mechanism and the linear drive mechanism 14a, 14b,
Independently and independently driven at high speed,
Each of them can be individually and independently linearly moved in the axial direction, and can be brought into contact with the surface to be polished of the substrate W to apply a predetermined processing pressure or be separated from the surface to be polished.

The rotational speeds of the two annular polishing pads 11a and 11b having different diameters can be set so that the rotation peripheral speeds of the two are the same. That is, the radii of the annular polishing pads 11a, 11b are set to r ₁ , r
_{When the} number of rotations of the outer rotary drive mechanism and the linear drive mechanism 14a or the polishing pad 11a is n ₁ , and the number of rotations of the inner rotary drive mechanism and the linear drive mechanism 14b or the polishing pad 11b is n ₂ , r ₁ By setting the rotation speeds n ₁ and n ₂ so that n ₁ = r ₂ · n ₂ , the rotation peripheral speeds of both polishing pads 11a and 11b can be made equal. Therefore, at this time, the smaller the radius of the polishing pad, the higher the rotational speed of the rotation.

Next, the operation of the first embodiment of the present invention will be described. First, when chemical mechanical polishing is performed using the inner and outer annular belt-shaped polishing pads 11a and 11b, the substrate W is detachably held on the upper surface of the rotary table 5, and then the slider 4 is moved in the radial direction to thereby remove the substrate W.
To the polishing pad 1 of the polishing tool units 10, 10, 10
It is positioned at a position where it can come into contact with 1,1,11.

Thereafter, the polishing tool units 10, 10, 1
0 rotary drive mechanism and linear drive mechanism 14a, 1
4b, the inner and outer annular polishing pads 11a, 11a, of the polishing tool units 10, 10, 10 are operated.
11b is moved axially downward toward the substrate W, and the polishing pads 11a, 11a,
11b are brought into contact with the surface to be polished of the substrate W. Then, an abrasive (polishing slurry) is supplied from a supply means (not shown) of the abrasive (polishing slurry) to the substrate W and each of the polishing pads 11a, 11a.
While rotating between the inner and outer ring-shaped polishing pads 11a, 11b... Through the revolving table 8 by the revolving table rotation drive mechanism 7 and rotating the respective ring-shaped polishing pads 11a, 11b. It is rotated at high speed by the driving mechanism / linear driving mechanisms 14a and 14b.
At the same time, the rotary table 5 is rotated and scanned in the radial direction while swinging with a short stroke in the radial direction to perform the chemical mechanism polishing.

When the inner and outer annular belt-shaped polishing pads 11a and 11b of each polishing tool unit 10 are simultaneously operated and polished, the inner and outer annular belt-shaped abrasive pads 11a and 11b are used.
Are rotated at the same peripheral speed, the effective contact surface and the effective polishing area can be increased, and highly accurate polishing can be efficiently performed.

In the polishing tool unit 10 of the present invention, since the inner and outer annular belt-like polishing pads 11a and 11b are relatively movable in the axial direction, the relative height of the polishing pads 11a and 11b is reduced. It can be adjusted, and the pressure applied to the surface to be polished can also be adjusted and controlled independently of each other, and the optimum processing pressure can be set individually according to the condition of the surface to be polished of the substrate. Is possible.

In order to polish the multi-zonal polishing pad having a small diameter while partially abutting the surface to be polished, the polishing pad can be rotated at a high speed and the presence or absence of local scratches on the surface to be polished can be checked. Regardless, polishing can be performed at high speed and with high accuracy.

Further, in the above description, both the outer and annular belt-like polishing pads 11a and 11b are used for polishing, but both polishing pads are relatively movable in the axial direction. Thus, only one of the annular polishing pads having different diameters can be selected and brought into contact with the surface to be polished of the workpiece to perform polishing.

In the above description, a double annular polishing pad has been described as an example of a multiple annular polishing pad. However, the present invention is not limited to the double annular polishing pad, and two or more multiple annular polishing pads can be used. . In addition, the number of polishing tools is 3
It goes without saying that the number is not limited to the individual number and can be appropriately selected.

The ring-shaped pad may be an intermittent ring-shaped pad in which a plurality of segments are arranged at intervals along the circumference in addition to a pad continuous along the circumference as shown in the figure. You may.

Next, a description will be given of a chemical mechanical polishing apparatus according to a second embodiment of the present invention.

In the second embodiment, as shown in FIG. 5, similarly to the polishing tool unit 10 described in the first embodiment, a plurality of annular zones having different diameters arranged coaxially are provided. In this embodiment, the substrate W, which is a workpiece, can be partially polished by using one polishing tool unit 20 including the multi-zonal polishing pad 21 including the polishing pads 21a and 21b. Specifically, one multi-zonal polishing pad 21 having a smaller diameter than the substrate W is brought into contact with a part of the surface to be polished of the substrate W, and only the portion of the surface to be polished of the substrate W is partially polished. It is possible to do that.

In FIG. 5, the polishing tool unit 20 disposed opposite to the turntable 25 for detachably holding the substrate W has an annular shape similarly to the polishing tool unit 10 shown in FIGS. The polishing pad comprises a ring-shaped polishing pad holding portion 22 for holding the polishing pad and a cylindrical shaft portion 23, respectively.
1 to two annular polishing pads 21a and 21b having different diameters.
FIG. Annular polishing pad 21
The outer cylindrical shaft portion 23a and the inner cylindrical shaft portion 23b provided with the polishing pad holding portions 22a and 22b having the lower ends a and 21b respectively attached thereto have rotation driving means (not shown) connected to their respective upper ends. The annular polishing pads 21a and 21b are rotationally driven by rotary driving means, or are individually and independently rotated at high speed by respective rotary driving means. Further, as in the first embodiment, a rotary drive mechanism and a linear drive mechanism can be used as the rotary drive means. By using the rotary drive mechanism and the linear drive mechanism, the annular polishing pad 21a, 21b can be individually and independently rotated at a high speed and can be individually and independently linearly moved in the axial direction, and can be brought into contact with the surface to be polished of the substrate W to apply a predetermined processing pressure. Or it can be separated from the surface to be polished.

Next, the partial polishing of the substrate W by the multiple annular polishing pad 21 will be described. First, the substrate W is held on the upper surface of the rotary table 25, and the inner and outer annular belt-like polishing pads 21a and 21b of the polishing tool unit 20 are removed.
The substrate W is brought into contact with the polished surface of the substrate W so as to apply a predetermined processing pressure, and an abrasive (polishing slurry) is supplied from an abrasive (polishing slurry) supply unit (not shown) to the substrate W and each of the annular polishing pads 21a and 21b. The substrate W can be partially chemically and mechanically polished by rotating each of the annular polishing pads 21a and 21b at a high speed by a rotary driving means or a rotary driving mechanism and a linear driving mechanism (not shown) while supplying the intermediate polishing liquid to the gap between the substrates. .

Also, in this partial polishing, the inner and outer annular belt-like polishing pads 21a and 21b are rotated at the same peripheral speed, so that the effective contact surface and the effective polishing area can be enlarged, so that highly accurate polishing can be performed efficiently. Can be. In addition, it is possible to appropriately set the processing pressure of each of the inner and outer annular belt-like polishing pads 21a and 21b, and it is also possible to perform polishing using only one of the inner and outer annular belt-like polishing pads 21a and 21b. It is.

Although the double annular polishing pad has been exemplified as the multiple annular polishing pad, the present invention is not limited to the double annular polishing pad, but two or more multiple annular polishing pads can be used. An intermittent ring-shaped pad in which a plurality of segments are arranged at intervals along the circumference may be used.

The driving system of the polishing tool unit 20 provided with the multiple annular polishing pad 21 and the rotary table 25 for detachably holding the substrate W as a workpiece will be further described. A rotary drive mechanism 26 for moving the surface to be polished of the workpiece can also be provided on the rotary table 25, so that the multiple annular polishing pad 21 is brought into contact with a part of the surface of the substrate W and only that part is contacted. The surface to be polished can be entirely polished or partially polished. By simultaneously driving the rotation driving means of the multiple annular belt-shaped polishing pad 21 and the substrate W, the surface to be polished of the substrate W can be entirely or partially polished, or one of the two rotation driving means can be polished. By driving only the surface, the surface to be polished of the substrate W can be entirely polished or partially polished. Furthermore, a complicated polishing operation can be performed by providing a swing mechanism 27 on the rotary table 25 and swinging the rotary table 25. It is also possible to provide a swing mechanism on the multiple annular polishing pad to swing the multiple annular polishing pad, and to provide a swing mechanism on both the rotary table and the multiple annular polishing pad to simultaneously swing. It can also be moved.

The workpieces suitable for polishing by the polishing method of the present invention described in the first and second embodiments of the present invention include Si, Ge, GaAs, and In.
Examples include a semiconductor wafer such as P, or a quartz or glass substrate having a plurality of island-shaped semiconductor regions formed on the surface.

In any case, a flat surface is required to form a wiring or an insulating region patterned by photolithography. Therefore, the surface to be polished
The surface is an insulating film or a metal film or a mixed surface thereof.

As the polishing surface of the polishing tool of the present invention, it is desirable to use the surface of a pad made of a nonwoven fabric, polyurethane foam or the like.

As the abrasive used in the present invention, a liquid containing fine particles is desirable. Specifically, fine particles include silica (SiO ₂ ), alumina (Al ₂ O ₃ ), manganese oxide (MnO ₂ ), Cerium (CeO) and the like are exemplified, and the liquid is a liquid containing NaOH, KOH, H ₂ O _{2 and the} like.

The particle diameter of the fine particles is preferably 8 nm to 50 nm. For example, the degree of aggregation of the particles can be controlled by changing the pH of KOH.

When polishing the semiconductor surface, a silica-dispersed sodium hydroxide solution is preferable, when polishing an insulating film, a silica-dispersed potassium hydroxide solution is preferable, and when polishing a metal film such as tungsten, alumina is used. And a hydrogen peroxide solution in which manganese oxide is dispersed. For example, in the case of polishing a semiconductor surface, when a silica-dispersed aqueous NaOH solution is used as an abrasive, the silicon surface reacts with NaOH to form a Na ₂ SiO ₃ layer which is a reaction product. This is removed by mechanical polishing with silica and a polishing cloth to expose a new silicon surface, whereby the reaction proceeds. Such a mechanism is called a chemical mechanical polishing.

[0043]

Since the present invention is configured as described above, the following effects can be obtained.

Since the diameter of the polishing tool unit can be reduced, vibration and the like do not occur even if the rotation speed of the polishing tool unit is set to a high speed. As a result, the removal amount per unit time of the surface to be polished of the workpiece to be polished, that is, the polishing rate is significantly increased.

Further, since the rotation speed and the processing pressure of the multi-zonal polishing pad can be individually changed, regardless of whether or not there is a local flaw on the surface to be polished of the workpiece, the polishing of the workpiece can be performed. The polished surface can be uniformly polished with high speed and high precision.

Further, by forming the polishing pad with a multi-zone-shaped polishing pad that rotates at the same peripheral speed, the effective contact surface and the effective polishing area can be increased, and the entire surface of the workpiece can be polished or polished. Partial polishing can be performed efficiently with high precision. And even in the whole surface polishing by a plurality of multiple annular belt-shaped polishing pads, the polishing can be performed with high accuracy, the polishing uniformity can be improved, and the productivity can be improved.

Further, the relative height of each of the multiple annular polishing pads can be independently adjusted according to the condition of the surface to be polished of the workpiece, and the pressing pressure of each polishing pad against the surface to be polished can be reduced. The polishing pad can be adjusted to an optimum one, and some of the multiple annular belt-shaped polishing pads can be selectively operated, so that more efficient polishing can be performed.

The polishing using the multi-zone-shaped polishing pad can be applied not only to the whole surface polishing of a workpiece such as a substrate but also to the partial polishing, so that efficient polishing can be performed.

[Brief description of the drawings]

FIG. 1 is a schematic side view showing an example of a chemical mechanical polishing apparatus according to a first embodiment of the present invention.

FIG. 2 is an explanatory view showing a relationship between a revolution table and each polishing tool unit having a double annular belt-shaped polishing pad in the chemical mechanical polishing apparatus shown in FIG.

FIG. 3 is a bottom perspective view of a double annular belt-shaped polishing pad.

FIG. 4 is a schematic cross-sectional view showing a structure of a polishing tool unit having a double annular belt-shaped polishing pad.

5A and 5B show a relationship between a double annular belt-shaped polishing pad and a substrate of a workpiece in a chemical mechanical polishing apparatus according to a second embodiment of the present invention, wherein FIG. It is a schematic side view which shows the polishing tool unit which has a polishing pad by a cross section, and (b) is explanatory drawing which shows the positional relationship between a double annular belt-shaped polishing pad and a board | substrate clearly.

FIG. 6 is a schematic perspective view showing an example of a conventional chemical mechanical polishing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Base 2 Supporting member 3 Guide table 4 Slider 5 Rotary table 6 Rotating shaft 7 Revolution table rotation drive mechanism 8 Revolution table 10 Polishing tool unit 11 Multi-zonal polishing pad 11a Outer annular polishing pad 11b Inner annular polishing pad 12 rings Belt-shaped polishing pad holding part 12a Outer polishing pad holding part 12b Inner polishing pad holding part 13 Cylindrical shaft part 13a Outer cylindrical shaft part 13b Inner cylindrical shaft part 14 Rotary drive mechanism and linear drive mechanism 20 Polishing tool unit 21 Multi-ring belt shape Polishing pad 21a Outer ring-shaped polishing pad 21b Inner ring-shaped polishing pad 22 Ring-shaped polishing pad holding portion 22a Outer polishing pad holding portion 22b Inner polishing pad holding portion 23 Cylindrical shaft portion 23a Outer cylindrical shaft portion 23b Inner cylindrical shaft portion 25 Rotary table 26 Rotary drive mechanism 2 The swing mechanism

Claims (21)

[Claims] 1. A chemical mechanical polishing method in which a polishing tool is brought into contact with a surface to be polished of a workpiece while applying a predetermined processing pressure, and polishing is performed while supplying an abrasive during the polishing. A multi-zonal polishing pad comprising a plurality of orb-shaped polishing pads having a smaller diameter than the surface to be polished and having different diameters arranged coaxially, and polishing the multi-zonal polishing pad to the surface to be polished of the workpiece. A chemical mechanical polishing method characterized in that the polishing is performed by rotating while being in contact with the substrate. 2. The polishing apparatus according to claim 1, wherein the plurality of annular polishing pads can be individually driven to rotate.
The chemical mechanical polishing method as described in the above. 3. The chemical mechanical polishing method according to claim 1, wherein the polishing is performed by revolving the multi-zonal polishing pad. 4. The chemical mechanical polishing method according to claim 1, wherein the entire surface to be polished of the workpiece is polished by using a multiple annular polishing pad. 5. The chemical mechanical polishing method according to claim 1, wherein the surface to be polished of the workpiece is partially polished using a multi-zone-shaped polishing pad. 6. The chemical mechanical polishing method according to claim 1, wherein the workpiece is a semiconductor. 7. The object to be processed, wherein a semiconductor film is formed on an insulating substrate.
The chemical mechanical polishing method according to any one of the above items. 8. The chemical mechanical polishing method according to claim 1, wherein the workpiece has a surface to be polished on the surface of which an insulating film and / or a metal film is formed. 9. The polishing composition according to claim 1, wherein the abrasive is an alkaline or acidic liquid containing fine particles.
The chemical mechanical polishing method according to any one of the above items. 10. A chemical mechanical polishing apparatus for performing polishing while supplying a polishing agent while bringing a polishing tool into contact with a surface to be polished of a workpiece while applying a predetermined processing pressure, wherein the polishing tool is A plurality of annular polishing pad holding portions having different diameters arranged coaxially, and a plurality of cylindrical shaft portions arranged coaxially and respectively continuous with the plurality of annular polishing pad holding portions. A chemical mechanical polishing apparatus characterized by the above-mentioned. 11. The chemical mechanical polishing apparatus according to claim 10, further comprising a rotation driving means for rotating a polishing surface of the polishing tool. 12. The chemical mechanical polishing method according to claim 10, wherein rotation driving means for rotating each of the annular polishing pad holders is connected to each of the plurality of cylindrical shafts of the polishing tool. 13. A rotary drive mechanism and a linear drive mechanism for rotating each of the annular polishing pad holders and moving them in the axial direction are connected to each of the plurality of cylindrical shaft portions of the polishing tool. The chemical mechanical polishing apparatus according to claim 10. 14. The chemical mechanical polishing apparatus according to claim 10, further comprising driving means for revolving a polishing surface of the polishing tool. 15. The chemical mechanical polishing apparatus according to claim 10, comprising at least two polishing tools. 16. A polishing tool is brought into contact with a surface to be polished of a workpiece while applying a predetermined processing pressure, and while the polishing agent is being supplied, the polishing surface of the polishing tool revolves and rotates. In the chemical mechanical polishing apparatus that performs polishing, the polishing tool is coaxially continuous with the plurality of annular polishing pad holding portions and the plurality of annular polishing pad holding portions having different diameters arranged coaxially. A rotary drive mechanism and a linear drive mechanism for rotating the respective ring-shaped polishing pad holders in each of the plurality of cylindrical shafts and moving the holder in the axial direction. A chemical mechanical polishing apparatus, characterized in that: 17. A rotary table for detachably holding and rotating a workpiece, a slider for supporting the rotary table and moving it in a radial direction, and a polishing tool rotatably and axially moving. A revolving table that freely supports,
A revolving drive mechanism for revolving the revolving table, a rotary drive mechanism and a linear drive mechanism for rotating the polishing surface of the polishing tool and moving the polishing surface in the axial direction, and processing the polishing surface of the polishing tool. In a chemical mechanical polishing apparatus for performing polishing while supplying an abrasive during the contact with the surface to be polished of the object while applying a predetermined processing pressure, the polishing tools are coaxially arranged with different diameters. A plurality of annularly arranged polishing pad holding portions and a plurality of cylindrically arranged shaft portions continuous with the plurality of annularly shaped polishing pad holding portions, the plurality of cylindrically arranged shaft portions being coaxially arranged. A chemical mechanical polishing apparatus wherein a rotary drive mechanism and a linear drive mechanism are connected to each of the shaft portions. 18. A rotary table for detachably holding and rotating a workpiece, a slider for supporting the rotary table and moving the rotary table in a radial direction, and a plurality of polishing tools arranged at regular intervals in a circumferential direction. A revolving table rotatably and axially movably supported, a revolving drive mechanism for revolving the revolving table, and a polishing surface of the polishing tool for rotating and moving in the axial direction. A rotating drive mechanism and a linear drive mechanism, wherein at least one polishing surface of the plurality of polishing tools is brought into contact with the surface to be polished of the workpiece while a predetermined processing pressure is applied, and an abrasive is applied between the surfaces. In a chemical mechanical polishing apparatus that performs polishing while supplying, the plurality of polishing tools are respectively provided with a plurality of annular polishing pad holders having different diameters arranged coaxially and holding the plurality of annular polishing pad. A plurality of cylindrical shafts arranged coaxially and continuously connected to each other, and a rotary drive mechanism and a linear drive mechanism are connected to each of the plurality of cylindrical shafts arranged coaxially. Characteristic chemical mechanical polishing equipment. 19. The rotating drive mechanism and the linear drive mechanism can individually adjust and control the number of rotations of each of the annular polishing pad holding portions, and the rotation driving mechanism and the linear driving mechanism can individually control and control the number of rotations. The chemical mechanical polishing apparatus as described in the above. 20. The rotary drive mechanism and the linear drive mechanism are capable of independently adjusting and controlling the linear movement amount of each of the annular polishing pad holders.
20. The chemical mechanical polishing apparatus according to any one of 6 to 19. 21. The plurality of annular polishing pad holders arranged coaxially and having different diameters are set to rotate at the same peripheral speed. Chemical mechanical polishing equipment.