JPH1041261A - Substrate treating apparatus and method thereof - Google Patents
Substrate treating apparatus and method thereofInfo
- Publication number
- JPH1041261A JPH1041261A JP18936096A JP18936096A JPH1041261A JP H1041261 A JPH1041261 A JP H1041261A JP 18936096 A JP18936096 A JP 18936096A JP 18936096 A JP18936096 A JP 18936096A JP H1041261 A JPH1041261 A JP H1041261A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- shielding plate
- supplying
- drying
- held
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 334
- 238000000034 method Methods 0.000 title abstract description 48
- 238000004140 cleaning Methods 0.000 claims abstract description 66
- 239000011261 inert gas Substances 0.000 claims abstract description 38
- 238000001035 drying Methods 0.000 claims description 56
- 239000007788 liquid Substances 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 31
- 239000012756 surface treatment agent Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 10
- 238000003672 processing method Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 239000008119 colloidal silica Substances 0.000 abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 238000005406 washing Methods 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 78
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 62
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 62
- 229910052757 nitrogen Inorganic materials 0.000 description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 30
- 238000002347 injection Methods 0.000 description 27
- 239000007924 injection Substances 0.000 description 27
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 210000000078 claw Anatomy 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- -1 methanol Natural products 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体基板や液晶用
ガラス基板(以下、単に基板という)に対して処理を施
す基板処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for processing a semiconductor substrate or a glass substrate for liquid crystal (hereinafter simply referred to as a substrate).
【0002】[0002]
【従来の技術】半導体の製造工程や、液晶表示板の製造
工程においては基板に各種処理が施される。このような
処理には例えば基板へのフォトレジストの塗布、フォト
レジストの剥離、フォトレジスト剥離後の洗浄などがあ
る。以下、基板に洗浄処理を施す基板処理装置につい
て、その要部断面図である図10を用いて説明する。こ
の基板処理装置は実開平3−104242号で提案され
ているものである。2. Description of the Related Art Various processes are performed on a substrate in a semiconductor manufacturing process and a liquid crystal display panel manufacturing process. Such processing includes, for example, application of a photoresist to a substrate, peeling of the photoresist, and cleaning after the removal of the photoresist. Hereinafter, a substrate processing apparatus that performs a cleaning process on a substrate will be described with reference to FIG. This substrate processing apparatus is proposed in Japanese Utility Model Laid-Open No. 3-104242.
【0003】基板処理装置1は処理液として、洗浄液で
あるフッ酸などの薬液や純水を用いて基板に対して洗浄
処理を施す。The substrate processing apparatus 1 performs a cleaning process on a substrate using a cleaning solution such as a chemical solution such as hydrofluoric acid or pure water.
【0004】基板処理装置1は箱体8内部にチャンバ9
を有する。チャンバ9下部には洗浄液の排液口10があ
る。また、チャンバ9内部には基板Wを吸着して保持す
る基板保持手段11がある。基板保持手段11は回転手
段(図示せず)によって回転する。またさらにチャンバ
9には基板Wに対して洗浄液を供給する洗浄液噴射ノズ
ル12およびチャンバ9内に不活性ガスを供給するガス
供給ノズル13が設けられている。A substrate processing apparatus 1 includes a chamber 9 inside a box 8.
Having. At the lower part of the chamber 9, there is a drain port 10 for the cleaning liquid. Further, inside the chamber 9, there is a substrate holding means 11 for sucking and holding the substrate W. The substrate holding means 11 is rotated by rotating means (not shown). Further, the chamber 9 is provided with a cleaning liquid injection nozzle 12 for supplying a cleaning liquid to the substrate W and a gas supply nozzle 13 for supplying an inert gas into the chamber 9.
【0005】この基板処理装置1における基板Wへの処
理について説明する。まず、基板Wが基板保持手段11
上に載置され、基板保持手段11は基板Wを吸着して保
持する。次に基板保持手段11が回転手段によって回さ
れる。そして、洗浄液噴射ノズル12からフッ酸などの
薬液が基板Wの表面に噴射され、当該基板W表面の薬液
洗浄処理が行われる。なお、基板Wから落下した余分な
薬液はチャンバ9下部の排液口10を通じて排出され
る。[0005] Processing on a substrate W in the substrate processing apparatus 1 will be described. First, the substrate W is placed on the substrate holding unit 11.
The substrate W is placed thereon, and the substrate holding means 11 sucks and holds the substrate W. Next, the substrate holding means 11 is rotated by the rotating means. Then, a chemical such as hydrofluoric acid is injected from the cleaning liquid injection nozzle 12 onto the surface of the substrate W, and a chemical liquid cleaning process on the surface of the substrate W is performed. The excess chemical liquid that has dropped from the substrate W is discharged through a drain port 10 at the lower part of the chamber 9.
【0006】薬液による洗浄処理が終了すると、次に、
洗浄液噴射ノズル12から純水が噴射され、基板W表面
の純水洗浄処理が行われる。このときに、洗浄中の純水
に空気中の酸素が溶込み、基板Wの表面にコロイダルシ
リカ(不揮発性ケイ酸塩)や自然酸化膜が生成されやす
い。これを防ぐ目的で、純水洗浄処理中は、ガス供給ノ
ズル13から基板Wに向かって不活性ガスが噴射され、
基板Wの表面付近は不活性ガス雰囲気で満たされる。[0006] When the cleaning process with the chemical solution is completed,
Pure water is sprayed from the cleaning liquid spray nozzle 12 to perform a pure water cleaning process on the surface of the substrate W. At this time, oxygen in the air dissolves into the pure water being cleaned, and colloidal silica (nonvolatile silicate) and a natural oxide film are likely to be formed on the surface of the substrate W. To prevent this, an inert gas is injected from the gas supply nozzle 13 toward the substrate W during the pure water cleaning process,
The vicinity of the surface of the substrate W is filled with an inert gas atmosphere.
【0007】純水による洗浄処理が終了すると、最後
に、ガス供給ノズル13から不活性ガスを噴射した状態
で、基板Wを高速で回転させ、その回転の遠心力によっ
て基板Wの表面に付着した水滴を飛ばすスピンドライが
行われる。When the cleaning treatment with pure water is completed, finally, the substrate W is rotated at a high speed in a state where the inert gas is jetted from the gas supply nozzle 13 and adhered to the surface of the substrate W by the centrifugal force of the rotation. Spin drying is performed to remove water drops.
【0008】[0008]
【発明が解決しようとする課題】従来の基板処理装置1
では、純水洗浄処理中において、基板W表面のコロイダ
ルシリカや自然酸化膜の生成防止のため、ガス供給ノズ
ル13から不活性ガスが吹き付けられているが当該基板
Wの上方には多くの空間があり、不活性ガスが基板Wに
到達するまでに不活性ガスに大量の空気が混ざる。そし
て、不活性ガスに混入した空気中の酸素によって基板W
の表面にコロイダルシリカや自然酸化膜が生成されるこ
ととなる。コロイダルシリカや自然酸化膜の生成を防ぐ
ためには、基板Wの表面近傍の空気を限りなく少なくす
る必要があるが、そのためには、大量の不活性ガスを供
給しなければならず、装置のランニングコストが高くな
るという不都合が生じる。A conventional substrate processing apparatus 1
In the pure water cleaning process, an inert gas is blown from the gas supply nozzle 13 in order to prevent the formation of colloidal silica and a natural oxide film on the surface of the substrate W. However, many spaces are provided above the substrate W. In some cases, a large amount of air is mixed with the inert gas before the inert gas reaches the substrate W. The substrate W is mixed with oxygen in the air mixed with the inert gas.
Colloidal silica or a natural oxide film is formed on the surface of the substrate. In order to prevent the formation of colloidal silica and a natural oxide film, it is necessary to reduce the air near the surface of the substrate W as much as possible. There is a disadvantage that the cost is increased.
【0009】また、スピンドライ中においては、基板W
の表面に付着した微小な水滴、特に基板Wの中心近傍や
パターン段差部分に付着した微小水滴には、当該水滴に
作用する遠心力よりも大きな付着力が作用しているた
め、その微小水滴を飛ばすことは困難となる。この微小
水滴に対しても上述の不活性ガスに混入した空気中の酸
素が溶込み、コロイダルシリカなどを生成することとな
る。そして、コロイダルシリカが生成した状態で基板W
に付着残留した微小水滴は、ウォーターマーク(不揮発
性ケイ酸塩の局所残留)の原因となる。During spin drying, the substrate W
Small water droplets adhered to the surface of the substrate, especially the small water droplets attached to the vicinity of the center of the substrate W or the step portion of the pattern, because the adhesion force greater than the centrifugal force acting on the water droplets is acting. It is difficult to skip. Oxygen in the air mixed with the above-mentioned inert gas also dissolves into the minute water droplets, and forms colloidal silica and the like. Then, with the colloidal silica generated, the substrate W
The minute water droplets adhering and remaining on the surface cause a watermark (local residue of nonvolatile silicate).
【0010】さらに、従来の基板処理装置1では、不活
性ガスを供給するときに、図10に示すように基板Wの
回転によって基板W表面に気流の巻き上がりが生じ、乱
流Tが発生する。このときに、チャンバ9の内側には、
薬液洗浄処理におけるHFとSiO2との反応生成物が
付着しており、乱流Tがその反応生成物を巻き込んで基
板Wに再付着させ、パーティクル付着の原因となること
がある。これを防ぐためには、薬液洗浄処理と純水洗浄
処理とを異なるチャンバに移し替えて、処理を行う必要
があり、処理の効率が低い。Further, in the conventional substrate processing apparatus 1, when the inert gas is supplied, as shown in FIG. 10, the rotation of the substrate W causes the airflow to wind up on the surface of the substrate W, thereby generating a turbulent flow T. . At this time, inside the chamber 9
The reaction product of HF and SiO 2 in the chemical cleaning process is attached, and the turbulence T entrains the reaction product and causes the reaction product to adhere again to the substrate W, which may cause particles to adhere. In order to prevent this, it is necessary to transfer the chemical solution cleaning process and the pure water cleaning process to different chambers and perform the process, and the processing efficiency is low.
【0011】本発明は、上記課題に鑑みて、洗浄処理中
に、コロイダルシリカや自然酸化膜が生成しない基板処
理装置および方法を提供することを第1の目的とする。In view of the above problems, it is a first object of the present invention to provide a substrate processing apparatus and method which do not generate colloidal silica or a natural oxide film during a cleaning process.
【0012】また、微小水滴が残留しないようにして、
ウォーターマークの生成を防止することができる基板処
理装置および方法を提供することを第2の目的とする。[0012] In addition, by preventing minute water droplets from remaining,
A second object is to provide a substrate processing apparatus and method capable of preventing generation of a watermark.
【0013】さらに、気流の巻き上がりを防ぎ、基板へ
のパーティクル付着を防止することができる基板処理装
置および方法を提供することを第3の目的とする。It is a third object of the present invention to provide a substrate processing apparatus and method capable of preventing airflow from rising and preventing particles from adhering to a substrate.
【0014】[0014]
【課題を解決するための手段】上記課題を解決するた
め、請求項1の発明は、基板を保持して回転する基板保
持部と、基板保持部に保持された基板に対向して配置さ
れ当該基板と対向する面が略平面である遮蔽板と、前記
基板保持部に保持された基板に当該基板の表面を処理す
る表面処理剤を供給する表面処理剤供給手段と、前記基
板保持部に保持された基板に当該基板表面上の付着物を
洗浄するためのリンス液を供給するリンス液供給手段
と、前記基板保持部に保持された基板と前記遮蔽板との
間の空間に不活性ガスを供給するガス供給手段と、を備
えている。In order to solve the above-mentioned problems, a first aspect of the present invention is directed to a substrate holding portion which rotates while holding a substrate, and a substrate holding portion which is disposed so as to face the substrate held by the substrate holding portion. A shielding plate having a substantially flat surface facing the substrate, surface treatment agent supply means for supplying a surface treatment agent for treating the surface of the substrate to the substrate held by the substrate holding unit, and holding the substrate holding unit Rinsing liquid supply means for supplying a rinsing liquid for cleaning the adhered substance on the substrate surface to the cleaned substrate, and supplying an inert gas to a space between the substrate held by the substrate holding unit and the shielding plate. Gas supply means for supplying.
【0015】また、請求項2の発明は、基板を保持して
回転する基板保持部と、基板保持部に保持された基板に
対向して配置され当該基板と対向する面が略平面である
遮蔽板と、前記基板保持部に保持されている基板に、当
該基板表面を乾燥させるための乾燥促進剤を供給する乾
燥促進剤供給手段とを備えている。According to a second aspect of the present invention, there is provided a substrate holding portion which rotates while holding a substrate, and a shielding plate which is disposed to face the substrate held by the substrate holding portion and has a substantially flat surface facing the substrate. A drying accelerator supplying means for supplying a drying accelerator for drying the surface of the substrate to the substrate held by the substrate holding unit;
【0016】また、請求項3の発明は、請求項2の発明
に係る基板処理装置において、前記乾燥促進剤の供給の
前において前記基板保持部に保持された基板に、リンス
液を供給するリンス液供給手段をさらに備えている。According to a third aspect of the present invention, in the substrate processing apparatus according to the second aspect of the present invention, a rinsing for supplying a rinsing liquid to the substrate held by the substrate holding unit before the supply of the drying accelerator. Liquid supply means is further provided.
【0017】また、請求項4の発明は、請求項3の発明
に係る基板処理装置において、前記基板保持部に保持さ
れた基板と前記遮蔽板との間の空間に不活性ガスを供給
するガス供給手段をさらに備えている。According to a fourth aspect of the present invention, in the substrate processing apparatus according to the third aspect of the present invention, a gas for supplying an inert gas to a space between the substrate held by the substrate holding portion and the shielding plate. The apparatus further includes supply means.
【0018】また、請求項5の発明は、基板保持部に保
持された基板に対向して配置され、当該基板と対向する
面が略平面である遮蔽板を前記基板に対して相対的に接
近させる遮蔽板接近工程と、前記遮蔽板接近工程の後に
前記基板保持部に保持された基板を回転させながら前記
基板に基板表面を処理する表面処理剤を供給する表面処
理剤供給工程と、前記表面処理剤供給工程の後に前記基
板を回転させながら前記基板と前記遮蔽板との間の空間
に不活性ガスを供給しつつ前記基板表面上の付着物を洗
浄するためのリンス液を供給するリンス液供給工程と、
前記リンス液供給工程の後に前記基板を回転させながら
前記基板と前記遮蔽板との間の空間に不活性ガスを供給
して前記基板表面を乾燥させる乾燥工程とを備えてい
る。According to a fifth aspect of the present invention, a shielding plate, which is disposed to face a substrate held by a substrate holding portion and has a substantially flat surface facing the substrate, is relatively close to the substrate. A shielding plate approaching step, a surface treatment agent supplying step of supplying a surface treatment agent for treating a substrate surface to the substrate while rotating the substrate held by the substrate holding unit after the shielding plate approaching step, A rinsing liquid for supplying a rinsing liquid for cleaning the deposits on the surface of the substrate while supplying an inert gas to the space between the substrate and the shielding plate while rotating the substrate after the treatment agent supply step; A supply process;
A drying step of drying the substrate surface by supplying an inert gas to a space between the substrate and the shielding plate while rotating the substrate after the rinsing liquid supply step.
【0019】また、請求項6の発明は、基板保持部に保
持された基板に対向して配置され、当該基板と対向する
面が略平面である遮蔽板を前記基板に対して相対的に接
近させる遮蔽板接近工程と、前記遮蔽板接近工程の後
に、前記基板保持部に保持されている基板を回転させな
がら、前記基板に基板表面を乾燥させるための乾燥促進
剤を供給する乾燥促進剤供給工程とを備えている。According to a sixth aspect of the present invention, a shielding plate, which is disposed to face a substrate held by a substrate holding portion and has a substantially flat surface facing the substrate, is relatively close to the substrate. A shielding plate approaching step, and a drying accelerator supply for supplying a drying accelerator for drying the substrate surface to the substrate while rotating the substrate held by the substrate holding unit after the shielding plate approaching step. And a process.
【0020】また、請求項7の発明は、請求項6の発明
に係る基板処理方法において、前記遮蔽板接近工程と前
記乾燥促進剤供給工程との間に前記基板を回転させなが
らリンス液を供給するリンス液供給工程をさらに備えて
いる。According to a seventh aspect of the present invention, in the substrate processing method according to the sixth aspect, a rinsing liquid is supplied while rotating the substrate between the shielding plate approaching step and the drying accelerator supplying step. And a rinsing liquid supply step.
【0021】また、請求項8の発明は、請求項7の発明
に係る基板処理方法において、前記リンス液供給工程と
同時に前記基板と前記遮蔽板との間の空間に不活性ガス
を供給している。According to an eighth aspect of the present invention, in the substrate processing method of the seventh aspect, an inert gas is supplied to a space between the substrate and the shielding plate simultaneously with the rinsing liquid supply step. I have.
【0022】また、請求項9の発明は、請求項6から請
求項8までのいずれかの発明に係る基板処理方法におい
て、前記乾燥促進剤供給工程の後に、前記基板を回転さ
せながら、前記基板と前記遮蔽板との間の空間に不活性
ガスを供給して前記基板表面を乾燥させる乾燥工程をさ
らに備えている。According to a ninth aspect of the present invention, in the substrate processing method according to any one of the sixth to eighth aspects, after the drying accelerator supplying step, the substrate is rotated while rotating the substrate. A drying step of supplying an inert gas to a space between the substrate and the shielding plate to dry the substrate surface.
【0023】[0023]
【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態について詳細に説明するが、その前にこの発
明における一般的用語と、以下の実施形態における具体
的用語との関係を整理すると以下のようになっている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Before that, the relationship between general terms in the present invention and specific terms in the following embodiments will be described. The following is a summary.
【0024】 一般的用語 :実施形態における具体的用語 ↓ ↓ リンス液 :純水 表面処理剤 :フッ酸水溶液、塩酸、硝酸、塩酸+過酸化水素水、フッ化水 素ガス又は蒸気 不活性ガス :窒素 乾燥促進剤 :IPA蒸気、IPA(液体)、メタノールなどのアルコール 類やアセトン。General terms: Specific terms in the embodiment ↓ Rinse solution: pure water Surface treatment agent: hydrofluoric acid aqueous solution, hydrochloric acid, nitric acid, hydrochloric acid + hydrogen peroxide solution, hydrogen fluoride gas or steam inert gas: Nitrogen drying accelerator: IPA vapor, IPA (liquid), alcohols such as methanol, and acetone.
【0025】[0025]
【第1の実施形態】第1の実施形態で説明する基板処理
装置1は、基板に対してフッ酸による表面洗浄処理を行
った後、純水(一般にはリンス液)を供給して純水洗浄
処理をし、さらに、基板を乾燥させる乾燥処理を行う。
なお、本明細書中では、フッ酸などの薬液と純水とを総
称して処理液と称することとする。First Embodiment A substrate processing apparatus 1 described in a first embodiment performs a surface cleaning treatment with hydrofluoric acid on a substrate, and then supplies pure water (generally, a rinsing liquid) to supply pure water. After the cleaning process, a drying process for drying the substrate is performed.
In this specification, a chemical solution such as hydrofluoric acid and pure water are collectively referred to as a treatment liquid.
【0026】図1は本発明の第1実施形態に係る基板処
理装置1の縦断面図である。また、図2はその上面図で
ある。以下、図1、図2を参照しながら説明する。な
お、図1は、後述する純水洗浄処理(一般にはリンス洗
浄処理)のときの基板処理装置1を示す図である。基板
処理装置1は箱体8内にカップ14を備える。カップ1
4は上面視円形の椀型部材で、その底部には周方向に連
続した谷部30が形成されている。谷部30には2つの
排液口10が開けられ、カップ14内に落下したフッ酸
や純水は排液口10から排出される。そして、基板保持
手段11がカップ14中央を貫いて設けられている。該
基板保持手段11は回転手段(図示せず)によって回転
される。基板保持手段11は複数の爪31を備えてお
り、当該爪31が基板Wの周部を保持する。従って、基
板保持手段11は基板Wを保持して回転するように構成
されている。FIG. 1 is a longitudinal sectional view of a substrate processing apparatus 1 according to a first embodiment of the present invention. FIG. 2 is a top view thereof. This will be described below with reference to FIGS. FIG. 1 is a diagram illustrating the substrate processing apparatus 1 during a pure water cleaning process (generally, a rinsing cleaning process) described later. The substrate processing apparatus 1 includes a cup 14 in a box 8. Cup 1
Reference numeral 4 denotes a bowl-shaped member having a circular shape in a top view, and a valley portion 30 which is continuous in the circumferential direction is formed at the bottom thereof. Two drain outlets 10 are opened in the valley portion 30, and hydrofluoric acid and pure water dropped into the cup 14 are discharged from the drain outlet 10. Further, the substrate holding means 11 is provided through the center of the cup 14. The substrate holding means 11 is rotated by rotating means (not shown). The substrate holding means 11 has a plurality of claws 31, and the claws 31 hold the periphery of the substrate W. Therefore, the substrate holding means 11 is configured to rotate while holding the substrate W.
【0027】また、基板Wに対向して遮蔽手段15が設
けられている。遮蔽手段15は駆動手段(図示せず)に
よって昇降する。図3は図1、図2に示す遮蔽手段15
の斜視図である。また、図4は遮蔽手段15要部の斜視
図である。図3において、固定ブロック16は装置本体
に固定されている。そして、2本の摺動軸18、18が
固定ブロック16を垂直方向に貫通している。この摺動
軸18、18は固定ブロック16に対して摺動可能であ
る。摺動軸18、18の下端は移動ブロック17に固定
されている。移動ブロック17は図示を省略する駆動手
段によって上下に昇降する。また、摺動軸18、18の
上端にはアームベース21が固定されている。アームベ
ース21には水平方向に長尺なアーム19の一端が固定
されている。アーム19の他端には同軸ノズル20が設
けられ端部には遮蔽板22が固定されている。この遮蔽
板22は、基板Wと対向する面が略平面状の円板であ
る。Further, a shielding means 15 is provided facing the substrate W. The shielding means 15 is moved up and down by a driving means (not shown). FIG. 3 shows the shielding means 15 shown in FIGS.
It is a perspective view of. FIG. 4 is a perspective view of a main part of the shielding means 15. In FIG. 3, the fixing block 16 is fixed to the apparatus main body. The two sliding shafts 18 penetrate the fixed block 16 in the vertical direction. The sliding shafts 18 are slidable with respect to the fixed block 16. The lower ends of the sliding shafts 18 are fixed to the moving block 17. The moving block 17 is moved up and down by driving means (not shown). An arm base 21 is fixed to the upper ends of the sliding shafts 18. One end of a horizontally long arm 19 is fixed to the arm base 21. A coaxial nozzle 20 is provided at the other end of the arm 19, and a shielding plate 22 is fixed to the end. The shield plate 22 is a disk having a substantially flat surface facing the substrate W.
【0028】遮蔽手段15は以上のような構成なので、
移動ブロック17が駆動手段によって上昇すると摺動軸
18、18も上昇し、アームベース21も上昇する。従
ってアーム19及び遮蔽板22も上昇する。このように
して、遮蔽板22と基板Wとの距離を変えることができ
る。Since the shielding means 15 is configured as described above,
When the moving block 17 is raised by the driving means, the sliding shafts 18, 18 are also raised, and the arm base 21 is also raised. Therefore, the arm 19 and the shielding plate 22 also move up. Thus, the distance between the shielding plate 22 and the substrate W can be changed.
【0029】次に、同軸ノズル20について説明する。
図5はアーム19端部から遮蔽板22を外した状態の同
軸ノズル20の斜視図である。アーム19の端部はL字
状になっており、基板Wに対向する部分には不活性ガス
を噴射する円形のガス噴射口23が開けられている。該
ガス噴射口23にはアーム19を貫いて設けられている
ブラケット24から不活性ガスである窒素が供給され
る。ガス噴射口23内にはガス噴射口23と同軸に噴射
ノズル25が設けられている。噴射ノズル25にはブラ
ケット26を通じてフッ酸または純水が供給される。Next, the coaxial nozzle 20 will be described.
FIG. 5 is a perspective view of the coaxial nozzle 20 with the shielding plate 22 removed from the end of the arm 19. The end of the arm 19 is L-shaped, and a circular gas injection port 23 for injecting an inert gas is opened in a portion facing the substrate W. Nitrogen, which is an inert gas, is supplied to the gas injection port 23 from a bracket 24 provided through the arm 19. An injection nozzle 25 is provided in the gas injection port 23 coaxially with the gas injection port 23. Hydrofluoric acid or pure water is supplied to the injection nozzle 25 through a bracket 26.
【0030】同軸ノズル20は以上のような構造なので
基板Wの略同一部分に対して窒素および、処理液を噴射
することができる。Since the coaxial nozzle 20 has the above-described structure, nitrogen and a processing liquid can be jetted onto substantially the same portion of the substrate W.
【0031】続いて図4を参照しながら遮蔽板22につ
いて説明する。遮蔽板22は中央に円形の開口27を有
する塩化ビニル樹脂(PVC)製の円板状部材である。
なお、既述したように、遮蔽板22の基板Wと対向する
面は略平面状である。この遮蔽板22の直径は基板Wの
直径とほぼ同径かまたはそれ以上のものであればよい
が、本実施形態では遮蔽板22の直径を基板Wの直径よ
りやや小さくしてある。こうすることによって遮蔽板2
2と基板Wとの距離を狭めたときに遮蔽板22と基板保
持手段11の爪31との干渉を防止することができる。
遮蔽板22の形状は円板状に限らず多角形の板材でもよ
い。Next, the shielding plate 22 will be described with reference to FIG. The shielding plate 22 is a disk-shaped member made of vinyl chloride resin (PVC) having a circular opening 27 at the center.
As described above, the surface of the shielding plate 22 facing the substrate W is substantially planar. The diameter of the shielding plate 22 may be substantially the same as or larger than the diameter of the substrate W. In this embodiment, the diameter of the shielding plate 22 is slightly smaller than the diameter of the substrate W. By doing so, the shielding plate 2
When the distance between the substrate 2 and the substrate W is reduced, interference between the shielding plate 22 and the claws 31 of the substrate holding means 11 can be prevented.
The shape of the shielding plate 22 is not limited to a disk shape but may be a polygonal plate material.
【0032】遮蔽板22はアーム19に固定されてお
り、開口27は同軸ノズル20のガス噴射口23に対応
している。なお、遮蔽板22はアーム19に固定されて
いるので遮蔽板22とアーム19とが擦れて発塵するこ
とがない。The shielding plate 22 is fixed to the arm 19, and the opening 27 corresponds to the gas injection port 23 of the coaxial nozzle 20. Since the shielding plate 22 is fixed to the arm 19, the shielding plate 22 does not rub against the arm 19 to generate dust.
【0033】以上のような構成の基板処理装置1の動作
について説明する。図6は、基板処理装置1の動作中に
おける遮蔽手段15の位置を説明する図である。The operation of the substrate processing apparatus 1 having the above configuration will be described. FIG. 6 is a diagram illustrating the position of the shielding unit 15 during the operation of the substrate processing apparatus 1.
【0034】まず、初期状態においては遮蔽手段15は
最も高い待避位置(図6中の点線の位置)にまで上昇し
ている。そして、搬送手段(図示せず)が水平状態で基
板Wを基板保持手段11に渡し、基板保持手段11は基
板Wを保持する。First, in the initial state, the shielding means 15 has risen to the highest retracted position (the position indicated by the dotted line in FIG. 6). Then, the transfer means (not shown) transfers the substrate W to the substrate holding means 11 in a horizontal state, and the substrate holding means 11 holds the substrate W.
【0035】次に駆動手段によって遮蔽手段15が図中
の高さAの位置まで降下する。遮蔽手段15の降下が完
了すると洗浄処理が開始される。Next, the shielding means 15 is lowered to the position of height A in the figure by the driving means. When the lowering of the shielding means 15 is completed, the cleaning process is started.
【0036】洗浄処理においては、まず、フッ酸水溶液
による表面洗浄処理が行われる。このときには、基板保
持手段11によって保持された基板Wが回転手段によっ
て回転されつつ、噴射ノズル25からフッ酸水溶液が基
板Wの回転中心近傍に噴射されて表面洗浄処理が行われ
る。なお、この実施形態において、基板Wの表面洗浄処
理に使用される表面処理剤はフッ酸水溶液であるが、こ
れに限定されるものではなく、塩酸、硝酸、塩酸+過酸
化水素水などの表面処理液や、フッ化水素などの気体又
は蒸気であっても良い。In the cleaning process, first, a surface cleaning process using a hydrofluoric acid aqueous solution is performed. At this time, while the substrate W held by the substrate holding unit 11 is rotated by the rotating unit, the hydrofluoric acid aqueous solution is jetted from the jet nozzle 25 to the vicinity of the rotation center of the substrate W to perform the surface cleaning process. In this embodiment, the surface treating agent used for the surface cleaning treatment of the substrate W is a hydrofluoric acid aqueous solution, but is not limited to this, and the surface treating agent such as hydrochloric acid, nitric acid, hydrochloric acid + hydrogen peroxide solution, etc. It may be a processing liquid or a gas or vapor such as hydrogen fluoride.
【0037】表面洗浄処理が終了すると、次に、純水洗
浄処理が行われる。この純水洗浄処理においては、純水
が供給されるのに先立って、ガス噴射口23から基板W
の中心部に向かって不活性ガスである窒素が噴射され、
基板Wと遮蔽板22との間の空間が窒素で満たされ、や
がて図1に示すような気流Fが生じる。そして、基板W
と遮蔽板22との間の空間に窒素が噴射されつつ、基板
Wを回転させながら噴射ノズル25から純水を基板Wの
回転中心近傍に噴射して、基板W表面の汚染物質を除去
する。When the surface cleaning process is completed, next, a pure water cleaning process is performed. In the pure water cleaning process, the substrate W is discharged from the gas injection port 23 before the pure water is supplied.
Nitrogen, which is an inert gas, is injected toward the center of the
The space between the substrate W and the shielding plate 22 is filled with nitrogen, and eventually an air flow F as shown in FIG. 1 is generated. And the substrate W
While spraying nitrogen into the space between the substrate W and the shielding plate 22, pure water is sprayed from the spray nozzle 25 to the vicinity of the rotation center of the substrate W while rotating the substrate W to remove contaminants on the surface of the substrate W.
【0038】このようにすれば、基板Wと遮蔽板22と
の間の空間は狭く、しかも基板Wの表面に沿って気流F
が形成されているため、当該空間に満たされた窒素に空
気が混入することがなくなり、純水洗浄処理中にも、コ
ロイダルシリカや自然酸化膜が生成することがなくな
る。また、基板Wと遮蔽板22との間の空間のみを窒素
で満たせば良いので、窒素の量が少なくて済む。In this manner, the space between the substrate W and the shielding plate 22 is narrow, and the air flow F along the surface of the substrate W
Is formed, air does not mix with the nitrogen filled in the space, and no colloidal silica or a natural oxide film is generated during the pure water cleaning treatment. Further, since only the space between the substrate W and the shielding plate 22 needs to be filled with nitrogen, the amount of nitrogen can be reduced.
【0039】純水洗浄処理が終了すると、最後に、乾燥
処理が行われる。乾燥処理が行われる際には、ガス噴射
口23から基板Wの中心部に向かって不活性ガスである
窒素を噴射し、基板Wと遮蔽板22との間の空間を窒素
で満たし続けたまま、駆動手段によって遮蔽手段15が
図6中の高さBの位置まで降下される。これは、遮蔽手
段15をなるべく基板Wに接近させた方が、基板Wと遮
蔽板22との間の空間を満たすのに必要とされる窒素の
量が少なくて済むからである。なお、純水洗浄処理にお
いて遮蔽手段15を高さBの位置まで降下させないの
は、処理液が遮蔽板22に付着しないようにするためで
ある。When the pure water cleaning process is completed, finally, a drying process is performed. When the drying process is performed, nitrogen, which is an inert gas, is injected from the gas injection port 23 toward the center of the substrate W, and the space between the substrate W and the shielding plate 22 is continuously filled with nitrogen. The driving means lowers the shielding means 15 to the position of height B in FIG. This is because the closer the shielding means 15 is to the substrate W as much as possible, the less the amount of nitrogen required to fill the space between the substrate W and the shielding plate 22 is required. The reason why the shielding means 15 is not lowered to the position of the height B in the pure water cleaning processing is to prevent the processing liquid from adhering to the shielding plate 22.
【0040】また、乾燥処理を行うときには、表面洗浄
処理および純水洗浄処理を行うときよりも、基板Wの回
転数を多くして、当該基板Wに付着した液滴により強い
遠心力が作用するようにする。When the drying process is performed, the number of rotations of the substrate W is increased as compared with the case where the surface cleaning process and the pure water cleaning process are performed, and a strong centrifugal force acts on the droplets attached to the substrate W. To do.
【0041】以上のようにすれば、基板Wと遮蔽板22
との間の空間において基板Wの表面に沿って気流が流れ
続けているため、図10に示したような乱流Tが基板W
表面上で巻き上がることがなくなり、基板Wへ反応生成
物などのパーティクルが付着するのを防止することがで
きる。したがって、表面洗浄処理と純水洗浄処理とを同
一チャンバ内にて連続的に行うこともでき、処理の効率
が向上する。As described above, the substrate W and the shielding plate 22
And the turbulent flow T as shown in FIG.
It does not wind up on the surface, so that particles such as reaction products can be prevented from adhering to the substrate W. Therefore, the surface cleaning processing and the pure water cleaning processing can be performed continuously in the same chamber, and the processing efficiency is improved.
【0042】また、乾燥処理中も常に、基板Wと遮蔽板
22との間の空間が窒素で満たされているため、基板W
の表面に付着した水滴に酸素が溶込んでコロイダルシリ
カを生成することがなくなり、ウォーターマークの発生
を防止することができる。Since the space between the substrate W and the shielding plate 22 is always filled with nitrogen even during the drying process, the substrate W
Oxygen does not dissolve into water droplets adhering to the surface of the substrate to form colloidal silica, thereby preventing generation of a watermark.
【0043】また、遮蔽板22の基板Wと対向する面は
略平面状であるが、この面上に溝を形成すれば、窒素を
その溝の方向に誘導することもできる。The surface of the shielding plate 22 facing the substrate W is substantially planar. If a groove is formed on this surface, nitrogen can be guided in the direction of the groove.
【0044】なお、本実施形態において、不活性ガスと
して窒素を使用していたが、これに限定されるものでは
なく、基板Wに付着した水滴と反応しないガスであれば
よい。In this embodiment, nitrogen is used as the inert gas. However, the present invention is not limited to this. Any gas may be used as long as it does not react with water droplets attached to the substrate W.
【0045】[0045]
【第2の実施形態】次に、第2実施形態について説明す
る。第2実施形態の基板処理装置1は、上記第1実施形
態において説明したものに加えて、ガス噴射口23から
乾燥促進剤としてIPA(イソプロピルアルコール)蒸
気が噴射されるように構成されている。Second Embodiment Next, a second embodiment will be described. The substrate processing apparatus 1 according to the second embodiment is configured such that IPA (isopropyl alcohol) vapor is injected from the gas injection port 23 as a drying accelerator in addition to that described in the first embodiment.
【0046】図7は、本発明の第2実施形態に係る基板
処理装置1の構成を説明するための機能ブロック図であ
る。図示の如く、フッ酸供給手段51と純水供給手段5
2とがバルブ55に接続されており、また、IPA蒸気
供給手段53と窒素供給手段54がバルブ56に接続さ
れている。バルブ55、56は、制御部50に電気的に
接続されており、当該制御部50によって供給手段が切
り換えられるように構成されている。すなわち、バルブ
55を切り換えることによってフッ酸供給手段51か純
水供給手段52かが選択され、また、バルブ56を切り
換えることによってIPA蒸気供給手段53か窒素供給
手段54かが選択される。そして、バルブ55、56
は、それぞれブラケット26、24(図1参照)に接続
されており、選択された供給手段からの処理液やガスが
基板Wに供給されるように構成されている。FIG. 7 is a functional block diagram for explaining the configuration of the substrate processing apparatus 1 according to the second embodiment of the present invention. As shown, hydrofluoric acid supply means 51 and pure water supply means 5
2 is connected to a valve 55, and the IPA vapor supply means 53 and the nitrogen supply means 54 are connected to a valve 56. The valves 55 and 56 are electrically connected to the control unit 50, and are configured such that the supply unit is switched by the control unit 50. That is, by switching the valve 55, the hydrofluoric acid supply unit 51 or the pure water supply unit 52 is selected, and by switching the valve 56, the IPA vapor supply unit 53 or the nitrogen supply unit 54 is selected. Then, the valves 55 and 56
Are connected to brackets 26 and 24 (see FIG. 1), respectively, so that the processing liquid or gas from the selected supply means is supplied to the substrate W.
【0047】なお、上記の第1実施形態では、IPA蒸
気を使用しないため、IPA蒸気供給手段53とバルブ
56とは設けられていないが、その他の機能的構成は、
図7に示すものと同様である。In the first embodiment, since the IPA vapor is not used, the IPA vapor supply means 53 and the valve 56 are not provided, but the other functional configurations are as follows.
This is the same as that shown in FIG.
【0048】第2実施形態に戻り、基板処理装置1本体
部の構成は図1から図5に示すものと同様であるため説
明を省略する。Returning to the second embodiment, the structure of the main body of the substrate processing apparatus 1 is the same as that shown in FIGS.
【0049】第2実施形態の基板処理装置1の動作につ
いて説明する。以下の説明は、基板処理装置1に、既に
表面処理剤による表面洗浄処理が終了した基板Wが搬入
された場合についてである。The operation of the substrate processing apparatus 1 according to the second embodiment will be described. The following description is about a case where the substrate W, which has already been subjected to the surface cleaning processing with the surface treatment agent, is carried into the substrate processing apparatus 1.
【0050】まず、駆動手段によって遮蔽手段15が図
6に示す高さAの位置まで降下する。そして、遮蔽手段
15の降下が完了すると純水洗浄処理が開始される。こ
こでは、窒素の噴射は行われず、基板保持手段11によ
って保持された基板Wを回転させつつ噴射ノズル25か
ら純水を基板Wの回転中心近傍に噴射することにより、
基板W表面の汚染物質が除去される。First, the shielding means 15 is lowered to the position of height A shown in FIG. 6 by the driving means. When the lowering of the shielding means 15 is completed, the pure water cleaning process is started. Here, the injection of nitrogen is not performed, and pure water is injected from the injection nozzle 25 near the rotation center of the substrate W while rotating the substrate W held by the substrate holding unit 11.
Contaminants on the surface of the substrate W are removed.
【0051】純水洗浄処理が終了すると、次に、乾燥処
理が開始される。乾燥処理に先立って、駆動手段により
遮蔽手段15が図6に示す高さBの位置まで降下する。
そして、基板Wの回転数を多くするとともに、ガス噴射
口23から基板Wの回転中心近傍にIPA蒸気が噴射さ
れて乾燥処理が行われる。このときに、IPA蒸気は基
板Wと遮蔽板22との間の空間において気流を形成し、
当該基板Wの表面に沿ってIPA蒸気の気流が流れ続け
ている。そして、IPA蒸気は、基板W表面に付着した
水分を吸着して、除去する機能を有する。When the pure water cleaning process is completed, a drying process is started next. Prior to the drying process, the driving means lowers the shielding means 15 to the position of height B shown in FIG.
Then, while increasing the number of rotations of the substrate W, IPA vapor is injected from the gas injection port 23 to the vicinity of the center of rotation of the substrate W to perform a drying process. At this time, the IPA vapor forms an airflow in the space between the substrate W and the shielding plate 22,
The IPA vapor stream continues to flow along the surface of the substrate W. The IPA vapor has a function of adsorbing and removing moisture adhering to the surface of the substrate W.
【0052】このようにすれば、基板Wの表面に付着し
た水滴は、基板Wの回転による遠心力によって除去され
るとともに、IPA蒸気が当該水滴を吸着して、除去す
るので、乾燥時間が短縮されるとともに、微少な水滴残
りを防止し、ウォーターマークの発生を防止することが
できる。また、基板Wと遮蔽板22との間の空間のみを
IPA蒸気で満たせば良いので、IPAの使用量が少な
くて済む。In this way, the water droplets adhering to the surface of the substrate W are removed by the centrifugal force due to the rotation of the substrate W, and the IPA vapor adsorbs and removes the water droplets, thereby shortening the drying time. At the same time, it is possible to prevent minute water droplets from remaining and prevent the occurrence of watermarks. In addition, since only the space between the substrate W and the shielding plate 22 needs to be filled with the IPA vapor, the amount of IPA used can be reduced.
【0053】なお、以上においては、乾燥促進剤として
IPA蒸気を使用していたが、これに限定されるもので
はなく、水分を吸着して除去する液、例えば、IPA、
メタノールなどのアルコール類やアセトンであってもか
まわない。もっとも、このような液を使用する場合に
は、遮蔽板22に液が付着するのを防ぐため、遮蔽手段
15を図6に示す高さAの位置で、基板Wの回転数も純
水洗浄処理のときと同じ回転数で乾燥処理を行う必要が
ある。In the above description, IPA vapor was used as a drying accelerator. However, the present invention is not limited to this. A liquid for absorbing and removing moisture, for example, IPA,
Alcohols such as methanol or acetone may be used. However, when such a liquid is used, in order to prevent the liquid from adhering to the shielding plate 22, the shielding means 15 is moved to the position of height A shown in FIG. It is necessary to perform the drying process at the same number of revolutions as in the process.
【0054】また、この第2実施形態においては、既に
表面洗浄処理が終了した基板Wが搬入された場合であっ
たが、これを表面処理剤による表面洗浄処理から開始す
るようにしても良い。この場合は、上記第1実施形態と
同様にして表面洗浄処理が行われる。In the second embodiment, the substrate W whose surface cleaning processing has already been completed is carried in, but this may be started from the surface cleaning processing using a surface treatment agent. In this case, the surface cleaning process is performed in the same manner as in the first embodiment.
【0055】また、第2実施形態において、IPA蒸気
を噴射した後、バルブ56を切り換えて、ガス噴射口2
3から基板Wの回転中心近傍に窒素を噴射するようにし
てもよい。このようにすれば、基板Wの表面近傍のIP
A雰囲気を速やかに置換することによって、乾燥時間を
より短縮することができる。In the second embodiment, after injecting the IPA vapor, the valve 56 is switched so that the gas injection port 2
It is also possible to inject nitrogen from near 3 to the vicinity of the rotation center of the substrate W. By doing so, the IP near the surface of the substrate W
By promptly replacing the atmosphere A, the drying time can be further reduced.
【0056】さらに、第2実施形態においては、純水洗
浄処理のときに、窒素を噴射していなかったが、このと
きにガス噴射口23から基板Wの回転中心近傍に窒素を
噴射するようにすれば、上記第1実施形態と同様に、純
水洗浄処理中にも、純水に酸素が溶込むことがなくな
り、コロイダルシリカや自然酸化膜が生成することがな
くなる。Further, in the second embodiment, nitrogen was not injected during the pure water cleaning process. At this time, nitrogen was injected from the gas injection port 23 to the vicinity of the rotation center of the substrate W. Then, similarly to the first embodiment, even during the pure water cleaning treatment, oxygen does not dissolve in the pure water, and no colloidal silica or a natural oxide film is generated.
【0057】[0057]
【第3の実施形態】図8は本発明の第3実施形態に係る
基板処理装置1aの縦断面図である。箱体8上部が基板
Wと対向する遮蔽板22である。また、箱体8上部には
噴射ノズル25および、ガス噴射口23が設けられてい
る。箱体8内部の基板保持手段11は基板Wを吸着して
保持し、回転する。また、該基板保持手段11は昇降手
段(図示せず)によって昇降し、基板Wと遮蔽板22と
の間隔を変えることができる。Third Embodiment FIG. 8 is a longitudinal sectional view of a substrate processing apparatus 1a according to a third embodiment of the present invention. The upper part of the box 8 is the shielding plate 22 facing the substrate W. Further, an injection nozzle 25 and a gas injection port 23 are provided on the upper part of the box 8. The substrate holding means 11 inside the box 8 sucks and holds the substrate W and rotates. Further, the substrate holding means 11 can be moved up and down by elevating means (not shown) to change the distance between the substrate W and the shielding plate 22.
【0058】この第3実施形態に係る基板処理装置1a
の動作について説明する。図9は、基板処理装置1aの
動作中における基板保持手段11の位置を説明する図で
ある。The substrate processing apparatus 1a according to the third embodiment
Will be described. FIG. 9 is a diagram illustrating the position of the substrate holding means 11 during the operation of the substrate processing apparatus 1a.
【0059】まず、初期状態においては基板保持手段1
1は最も低い待避位置(図9中の点線の位置)にまで降
下している。そして、搬送手段(図示せず)が水平状態
で基板Wを基板保持手段11に渡し、基板保持手段11
は基板Wを保持する。First, in the initial state, the substrate holding means 1
1 has been lowered to the lowest retract position (the position indicated by the dotted line in FIG. 9). Then, the transfer means (not shown) transfers the substrate W to the substrate holding means 11 in a horizontal state.
Holds the substrate W.
【0060】次に駆動手段によって基板保持手段11が
図中の高さAの位置まで上昇する。基板保持手段11の
上昇が完了すると洗浄処理が開始される。Next, the substrate holding means 11 is raised to the position of height A in the figure by the driving means. When the lifting of the substrate holding means 11 is completed, the cleaning process is started.
【0061】洗浄処理においては、上記第1実施形態と
同様に、まず、フッ酸水溶液による表面洗浄処理が行わ
れる。このときには、基板保持手段11によって保持さ
れた基板Wが回転手段によって回転されつつ、噴射ノズ
ル25からフッ酸水溶液が基板Wの回転中心近傍に噴射
されて表面洗浄処理が行われる。In the cleaning process, as in the first embodiment, first, a surface cleaning process using a hydrofluoric acid aqueous solution is performed. At this time, while the substrate W held by the substrate holding unit 11 is rotated by the rotating unit, the hydrofluoric acid aqueous solution is jetted from the jet nozzle 25 to the vicinity of the rotation center of the substrate W to perform the surface cleaning process.
【0062】表面洗浄処理が終了すると、次に、純水洗
浄処理が行われる。このときも上記第1実施形態と同様
に、ガス噴射口23から基板Wの中心部に向かって不活
性ガスである窒素が噴射されつつ、回転している基板W
の回転中心近傍に噴射ノズル25から純水が噴射され
て、基板W表面の汚染物質が除去される。When the surface cleaning processing is completed, next, pure water cleaning processing is performed. At this time, similarly to the first embodiment, the rotating substrate W while the inert gas nitrogen is being injected from the gas injection port 23 toward the center of the substrate W.
Pure water is sprayed from the spray nozzle 25 near the rotation center of the substrate W to remove contaminants on the surface of the substrate W.
【0063】このようにしても、基板Wと遮蔽板22と
の間の空間は狭く、しかも基板Wの表面に沿って気流が
形成されているため、当該空間に満たされた窒素に空気
が混入することがなくなり、純水洗浄処理中にも、コロ
イダルシリカや自然酸化膜が生成することがなくなる。
また、基板Wと遮蔽板22との間の空間のみを窒素で満
たせば良いので、窒素の量が少なくて済む。Even in this case, since the space between the substrate W and the shielding plate 22 is narrow and an airflow is formed along the surface of the substrate W, air is mixed in the nitrogen filled in the space. No colloidal silica or natural oxide film is generated during the pure water cleaning treatment.
Further, since only the space between the substrate W and the shielding plate 22 needs to be filled with nitrogen, the amount of nitrogen can be reduced.
【0064】純水洗浄処理が終了すると、最後に、乾燥
処理が行われる。乾燥処理が行われる際には、ガス噴射
口23から基板Wの中心部に向かって不活性ガスである
窒素が噴射され、基板Wと遮蔽板22との間の空間を窒
素で満たし続けたまま、駆動手段によって基板保持手段
11が図9中の高さBの位置まで上昇する。そして、基
板Wの回転数を多くして、当該基板Wに付着した液滴に
より強い遠心力が作用するようにする。When the pure water cleaning process is completed, finally, a drying process is performed. When the drying process is performed, nitrogen, which is an inert gas, is injected from the gas injection port 23 toward the center of the substrate W, and the space between the substrate W and the shielding plate 22 is continuously filled with nitrogen. Then, the substrate holding means 11 is moved up to the position of height B in FIG. 9 by the driving means. Then, the number of rotations of the substrate W is increased so that a strong centrifugal force acts on the droplets attached to the substrate W.
【0065】以上のようにすれば、第1実施形態と同様
に、基板Wへ反応生成物などのパーティクルが付着する
のを防止することができる。したがって、表面洗浄処理
と純水洗浄処理とを同一チャンバ内にて連続的に行うこ
ともでき、処理の効率が向上する。As described above, similarly to the first embodiment, it is possible to prevent particles such as reaction products from adhering to the substrate W. Therefore, the surface cleaning processing and the pure water cleaning processing can be performed continuously in the same chamber, and the processing efficiency is improved.
【0066】また、乾燥処理中も常に、基板Wと遮蔽板
22との間の空間が窒素で満たされているため、基板W
の表面に付着した水滴に酸素が溶込んでコロイダルシリ
カを生成することがなくなり、ウォーターマークの発生
を防止することができる。Since the space between the substrate W and the shielding plate 22 is always filled with nitrogen during the drying process, the substrate W
Oxygen does not dissolve into water droplets adhering to the surface of the substrate to form colloidal silica, thereby preventing generation of a watermark.
【0067】[0067]
【第4の実施形態】第4実施形態の基板処理装置1a
は、上記第3実施形態において説明したものに加えて、
ガス噴射口23から乾燥促進剤としてIPA蒸気が噴射
されるように構成されている。そして、その構成は、図
7に示すものと同様の構成である。Fourth Embodiment A substrate processing apparatus 1a according to a fourth embodiment
Is the same as that described in the third embodiment,
It is configured such that IPA vapor is injected from the gas injection port 23 as a drying accelerator. The configuration is the same as that shown in FIG.
【0068】この基板処理装置1aに表面洗浄処理済み
の基板Wが搬入された場合、まず、駆動手段によって基
板保持手段11が図9に示す高さAの位置まで上昇す
る。そして、基板保持手段11の上昇が完了すると純水
洗浄処理が開始される。ここでは、窒素の噴射は行われ
ず、基板保持手段11によって保持された基板Wを回転
させつつ噴射ノズル25から純水を基板Wの回転中心近
傍に噴射することにより、基板W表面の汚染物質が除去
される。When the substrate W having been subjected to the surface cleaning processing is carried into the substrate processing apparatus 1a, first, the substrate holding means 11 is raised by the driving means to the position of the height A shown in FIG. Then, when the lifting of the substrate holding means 11 is completed, the pure water cleaning process is started. Here, nitrogen is not sprayed, and pure water is sprayed from the spray nozzle 25 to the vicinity of the rotation center of the substrate W while rotating the substrate W held by the substrate holding means 11, whereby contaminants on the surface of the substrate W are removed. Removed.
【0069】純水洗浄処理が終了すると、次に、乾燥処
理が開始される。乾燥処理に先立って、駆動手段により
基板保持手段11が図9に示す高さBの位置まで上昇す
る。そして、基板Wの回転数を多くするとともに、ガス
噴射口23から基板Wの回転中心近傍にIPA蒸気が噴
射されて乾燥処理が行われる。このときに、IPA蒸気
は、基板Wと遮蔽板22との間の空間において気流を形
成し、当該基板Wの表面に沿ってIPA蒸気の気流が流
れ続けている。When the pure water cleaning process is completed, next, the drying process is started. Prior to the drying process, the driving means moves the substrate holding means 11 up to the position of height B shown in FIG. Then, while increasing the number of rotations of the substrate W, IPA vapor is injected from the gas injection port 23 to the vicinity of the center of rotation of the substrate W to perform a drying process. At this time, the IPA vapor forms an airflow in the space between the substrate W and the shielding plate 22, and the IPA vapor continues to flow along the surface of the substrate W.
【0070】このようにすれば、基板Wの表面に付着し
た水滴は、基板Wの回転による遠心力によって除去され
るとともに、IPA蒸気が当該水滴を吸着して、除去す
るので、乾燥時間が短縮されるとともに、微少な水滴残
りを防止し、ウォーターマークの発生を防止することが
できる。また、基板Wと遮蔽板22との間の空間のみを
IPA蒸気で満たせば良いので、IPAの使用量が少な
くて済む。In this manner, the water droplets adhering to the surface of the substrate W are removed by the centrifugal force due to the rotation of the substrate W, and the IPA vapor adsorbs and removes the water droplets, thereby shortening the drying time. At the same time, it is possible to prevent minute water droplets from remaining and prevent the occurrence of watermarks. In addition, since only the space between the substrate W and the shielding plate 22 needs to be filled with the IPA vapor, the amount of IPA used can be reduced.
【0071】なお、以上において、上記第2実施形態と
同様に、表面処理剤による表面洗浄処理から開始するよ
うにしても良いし、IPA蒸気を噴射した後、ガス噴射
口23から基板Wの回転中心近傍に窒素を噴射するよう
にしても良いし、純水洗浄処理のときに、ガス噴射口2
3から基板Wの回転中心近傍に窒素を噴射するようにし
ても良い。In the above, as in the second embodiment, the surface cleaning may be started with a surface treating agent, or after the IPA vapor is injected, the substrate W is rotated from the gas injection port 23. Nitrogen may be injected near the center, or the gas injection port 2 may be used during the pure water cleaning process.
It is also possible to inject nitrogen from near 3 to the vicinity of the rotation center of the substrate W.
【0072】[0072]
【発明の効果】以上、説明したように、請求項1および
請求項5の発明によれば、基板と遮蔽板との間の空間は
狭く、しかも基板の表面に沿って不活性ガスの気流が形
成されているため、当該空間に満たされた不活性ガスに
空気が混入することがなくなり、リンス洗浄処理中に
も、コロイダルシリカや自然酸化膜が生成することがな
くなる。また、基板と遮蔽板との間の空間のみを不活性
ガスで満たせば良いので、不活性ガスの量が少なくて済
む。As described above, according to the first and fifth aspects of the present invention, the space between the substrate and the shielding plate is narrow, and the flow of the inert gas is reduced along the surface of the substrate. Since it is formed, air does not mix with the inert gas filled in the space, and no colloidal silica or natural oxide film is generated during the rinsing process. In addition, since only the space between the substrate and the shielding plate needs to be filled with the inert gas, the amount of the inert gas can be reduced.
【0073】また、乱流が基板表面上で巻き上がること
がなくなり、基板へ反応生成物などのパーティクルが付
着するのを防止することができる。In addition, the turbulence does not wind up on the substrate surface, so that particles such as reaction products can be prevented from adhering to the substrate.
【0074】また、乾燥処理中も常に、基板と遮蔽板と
の間の空間が不活性ガスで満たされているため、基板の
表面に付着した水滴に酸素が溶込んでコロイダルシリカ
を生成することがなくなり、ウォーターマークの発生を
防止することができる。Also, since the space between the substrate and the shielding plate is always filled with the inert gas even during the drying process, oxygen is dissolved in water droplets attached to the surface of the substrate to form colloidal silica. Is eliminated, and generation of a watermark can be prevented.
【0075】請求項2、請求項3、請求項6および請求
項7の発明によれば、基板の表面に付着した水滴は、基
板の回転による遠心力によって除去されるとともに、乾
燥促進剤が当該水滴を吸着して、除去するので、乾燥時
間が短縮されるとともに、微少な水滴残りを防止し、ウ
ォーターマークの発生を防止することができる。また、
基板と遮蔽板との間の空間のみを乾燥促進剤で満たせば
良いので、乾燥促進剤の使用量が少なくて済む。According to the second, third, sixth and seventh aspects of the present invention, the water droplets adhered to the surface of the substrate are removed by centrifugal force due to the rotation of the substrate, and the drying accelerator is added to the water droplet. Since the water droplets are adsorbed and removed, the drying time can be shortened, minute residual water droplets can be prevented, and the occurrence of watermarks can be prevented. Also,
Since only the space between the substrate and the shielding plate needs to be filled with the drying accelerator, the amount of the drying accelerator used can be reduced.
【0076】請求項4および請求項8の発明によれば、
リンス洗浄処理中にも、リンス液に酸素が溶込むことが
なくなり、コロイダルシリカや自然酸化膜が生成するこ
とがなくなる。According to the fourth and eighth aspects of the present invention,
Oxygen does not dissolve in the rinsing liquid during the rinsing process, and no colloidal silica or natural oxide film is generated.
【0077】請求項9の発明によれば、基板の表面近傍
の乾燥促進剤の雰囲気を速やかに置換することによっ
て、乾燥時間をより短縮することができる。According to the ninth aspect of the present invention, the drying time can be further shortened by rapidly replacing the atmosphere of the drying accelerator near the surface of the substrate.
【図1】本発明に係る基板処理装置の縦断面図である。FIG. 1 is a longitudinal sectional view of a substrate processing apparatus according to the present invention.
【図2】本発明に係る基板処理装置の上面図である。FIG. 2 is a top view of the substrate processing apparatus according to the present invention.
【図3】図1、図2に示す遮蔽手段の斜視図である。FIG. 3 is a perspective view of the shielding means shown in FIGS. 1 and 2;
【図4】図3の遮蔽手段の要部斜視図である。FIG. 4 is a perspective view of a main part of the shielding means of FIG. 3;
【図5】アーム端部から遮蔽板を外した状態の同軸ノズ
ルの斜視図である。FIG. 5 is a perspective view of the coaxial nozzle with a shielding plate removed from an end of the arm.
【図6】基板処理装置の動作中における遮蔽手段の位置
を説明する図である。FIG. 6 is a diagram illustrating a position of a shielding unit during operation of the substrate processing apparatus.
【図7】本発明の他の実施形態に係る基板処理装置の構
成を説明するための機能ブロック図である。FIG. 7 is a functional block diagram illustrating a configuration of a substrate processing apparatus according to another embodiment of the present invention.
【図8】本発明の他の実施形態に係る基板処理装置の縦
断面図である。FIG. 8 is a longitudinal sectional view of a substrate processing apparatus according to another embodiment of the present invention.
【図9】基板処理装置1aの動作中における基板保持手
段11の位置を説明する図である。FIG. 9 is a diagram illustrating the position of the substrate holding means 11 during operation of the substrate processing apparatus 1a.
【図10】従来の基板処理装置の要部断面図である。FIG. 10 is a sectional view of a main part of a conventional substrate processing apparatus.
1、1a 基板処理装置 11 基板保持手段 22 遮蔽板 23 ガス噴射口 25 噴射ノズル W 基板 DESCRIPTION OF SYMBOLS 1, 1a Substrate processing apparatus 11 Substrate holding means 22 Shielding plate 23 Gas injection port 25 Injection nozzle W Substrate
Claims (9)
基板と対向する面が略平面である遮蔽板と、 前記基板保持部に保持された基板に、当該基板の表面を
処理する表面処理剤を供給する表面処理剤供給手段と、 前記基板保持部に保持された基板に、当該基板表面上の
付着物を洗浄するためのリンス液を供給するリンス液供
給手段と、 前記基板保持部に保持された基板と前記遮蔽板との間の
空間に不活性ガスを供給するガス供給手段と、 を備えたことを特徴とする基板処理装置。A substrate holding unit configured to hold and rotate a substrate, a shielding plate disposed to face the substrate held by the substrate holding unit, and a surface facing the substrate being substantially flat; A surface treatment agent supply unit for supplying a surface treatment agent for treating the surface of the substrate to the substrate held by the unit; and for cleaning a substance held on the substrate surface to the substrate held by the substrate holding unit. A rinsing liquid supply unit for supplying a rinsing liquid; and a gas supply unit for supplying an inert gas to a space between the substrate held by the substrate holding unit and the shielding plate. Substrate processing equipment.
基板と対向する面が略平面である遮蔽板と、 前記基板保持部に保持されている基板に、当該基板表面
を乾燥させるための乾燥促進剤を供給する乾燥促進剤供
給手段と、 を備えたことを特徴とする基板処理装置。2. A substrate holding unit that rotates while holding a substrate, a shielding plate that is disposed to face the substrate held by the substrate holding unit and has a substantially flat surface facing the substrate, A drying accelerator supplying means for supplying a drying accelerator for drying the substrate surface to the substrate held by the unit.
持された基板に、リンス液を供給するリンス液供給手段
をさらに備えたことを特徴とする基板処理装置。3. The substrate processing apparatus according to claim 2, further comprising a rinsing liquid supply unit that supplies a rinsing liquid to the substrate held by the substrate holding unit before the supply of the drying accelerator. Characteristic substrate processing equipment.
空間に不活性ガスを供給するガス供給手段をさらに備え
たことを特徴とする基板処理装置。4. The substrate processing apparatus according to claim 3, further comprising gas supply means for supplying an inert gas to a space between the substrate held by the substrate holding unit and the shielding plate. Substrate processing apparatus.
配置され、当該基板と対向する面が略平面である遮蔽板
を前記基板に対して相対的に接近させる遮蔽板接近工程
と、 前記遮蔽板接近工程の後に、前記基板保持部に保持され
た基板を回転させながら、前記基板に基板表面を処理す
る表面処理剤を供給する表面処理剤供給工程と、 前記表面処理剤供給工程の後に、前記基板を回転させな
がら、前記基板と前記遮蔽板との間の空間に不活性ガス
を供給しつつ、前記基板表面上の付着物を洗浄するため
のリンス液を供給するリンス液供給工程と、 前記リンス液供給工程の後に、前記基板を回転させなが
ら、前記基板と前記遮蔽板との間の空間に不活性ガスを
供給して前記基板表面を乾燥させる乾燥工程と、 を備えたことを特徴とする基板処理方法。5. A shielding plate approaching step in which a shielding plate arranged opposite to a substrate held by a substrate holding portion and having a substantially flat surface facing the substrate is relatively approached to the substrate; After the shielding plate approaching step, a surface treatment agent supply step of supplying a surface treatment agent for treating a substrate surface to the substrate while rotating the substrate held by the substrate holding unit; and A rinsing liquid supply step of supplying a rinsing liquid for cleaning the deposits on the substrate surface while supplying an inert gas to a space between the substrate and the shielding plate while rotating the substrate. And a drying step of supplying an inert gas to a space between the substrate and the shielding plate to dry the substrate surface while rotating the substrate after the rinsing liquid supply step. Substrate processing characterized by Law.
配置され、当該基板と対向する面が略平面である遮蔽板
を前記基板に対して相対的に接近させる遮蔽板接近工程
と、 前記遮蔽板接近工程の後に、前記基板保持部に保持され
ている基板を回転させながら、前記基板に基板表面を乾
燥させるための乾燥促進剤を供給する乾燥促進剤供給工
程と、 を備えたことを特徴とする基板処理方法。6. A shielding plate approaching step, in which a shielding plate arranged opposite to a substrate held by a substrate holding portion and having a substantially flat surface facing the substrate is relatively approached to the substrate; After the shielding plate approaching step, a drying accelerator supplying step of supplying a drying accelerator for drying the substrate surface to the substrate while rotating the substrate held by the substrate holding unit. A substrate processing method characterized by the above-mentioned.
に、前記基板を回転させながら、リンス液を供給するリ
ンス液供給工程をさらに備えたことを特徴とする基板処
理方法。7. The substrate processing method according to claim 6, further comprising a rinsing liquid supplying step of supplying a rinsing liquid while rotating the substrate, between the shielding plate approaching step and the drying accelerator supplying step. A substrate processing method, comprising:
との間の空間に不活性ガスを供給することを特徴とする
基板処理方法。8. The substrate processing method according to claim 7, wherein an inert gas is supplied to a space between the substrate and the shielding plate simultaneously with the rinsing liquid supplying step.
かの基板処理方法において、 前記乾燥促進剤供給工程の後に、前記基板を回転させな
がら、前記基板と前記遮蔽板との間の空間に不活性ガス
を供給して前記基板表面を乾燥させる乾燥工程をさらに
備えたことを特徴とする基板処理方法。9. The substrate processing method according to claim 6, wherein after the drying accelerator supplying step, the space between the substrate and the shielding plate is rotated while rotating the substrate. Further comprising a drying step of drying the surface of the substrate by supplying an inert gas to the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18936096A JP3441304B2 (en) | 1996-07-18 | 1996-07-18 | Substrate processing apparatus and method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18936096A JP3441304B2 (en) | 1996-07-18 | 1996-07-18 | Substrate processing apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH1041261A true JPH1041261A (en) | 1998-02-13 |
JP3441304B2 JP3441304B2 (en) | 2003-09-02 |
Family
ID=16240027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18936096A Expired - Fee Related JP3441304B2 (en) | 1996-07-18 | 1996-07-18 | Substrate processing apparatus and method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3441304B2 (en) |
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JP2001223195A (en) * | 1999-12-01 | 2001-08-17 | Ses Co Ltd | Single wafer type substrate cleaning method, single wafer type substrate cleaning apparatus and substrate cleaning system |
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1996
- 1996-07-18 JP JP18936096A patent/JP3441304B2/en not_active Expired - Fee Related
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