JPH10321605A - Plasma treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma treatment device, which can control ion energy of plasma during treatment and during cleaning inside a treatment chamber independently. SOLUTION: A baffle board 132 is arranged inside a treatment chamber 102 of an etching device 100 to separate a plasma region and an exhaust path formed inside the treatment chamber 102. The baffle board 132 is constituted of a sleeve part 132a enclosing a circumference of a susceptor 110 and a collar part 132b projecting from an upper end of the sleeve part 132a in the outward direction. A plurality of through holes 134 are shaped all over the baffle board 132, and a lifting shaft 136 is connected thereto, and it is constituted to move up and down freely by operation of a lifting mechanism. The capacity of a plasma region increases and decreases as the baffle board 132 moves relatively down during treatment and moves relatively up during cleaning, and desired ion energy of plasma can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a plasma processing apparatus.

[0002]

2. Description of the Related Art Heretofore, there has been proposed an etching apparatus in which an upper electrode and a lower electrode are opposed to each other in a processing chamber formed in an airtight processing vessel. In such an etching apparatus, after an object to be processed is mounted on a mounting surface formed on a lower electrode, a predetermined processing gas is introduced into the processing chamber, and a predetermined high-frequency power is applied to the lower electrode, for example, to apply a predetermined high-frequency power to the lower electrode. Then, a plasma is excited, and a predetermined etching process is performed on the object to be processed by the plasma.

In such an apparatus, the control of the plasma in the plasma region formed in the processing chamber is performed, for example, by controlling the output and frequency of the high-frequency power applied to the electrodes arranged in the processing chamber or the method of applying the same. The adjustment is performed by adjusting the supply (discharge) direction of the processing gas introduced into the processing chamber, adjusting the arrangement of the exhaust path connected to the processing chamber, and the like.

[0004]

Incidentally, it has been desired that the plasma region formed in the processing chamber be brought into the following state between the processing and the cleaning of the processing chamber. That is, for example, during the etching process, the plasma region is relatively widened to widen the plasma generation range, so that, for example, the ion energy on the inner wall of the processing chamber is reduced, and on the other hand, the ion energy on the workpiece is increased, and It has been desired to direct a desired state of plasma to the body. On the other hand, when cleaning the inside of the processing chamber, by narrowing the plasma region relatively to narrow the plasma generation range, for example, it is possible to increase the ion energy to the wall surface of the processing chamber and to improve the cleaning speed, that is, the removal speed of the deposits. Was desired.

However, by controlling the high-frequency power, adjusting the supply direction of the processing gas, or changing the arrangement of the exhaust path, the plasma generation range in the plasma region is adjusted, that is, the ion energy required during the processing is reduced. ,
The ion energy required at the time of cleaning cannot be controlled independently.

The present invention has been made in view of the above-mentioned problems of the prior art, and independently controls the ion energy required during processing and the ion energy required during cleaning. It is an object of the present invention to provide a new and improved plasma processing apparatus capable of performing the above.

[0007]

According to the present invention, a predetermined processing gas introduced into a processing chamber is converted into a plasma, and a predetermined plasma is applied to an object placed on an electrode disposed in the processing chamber. The present invention is applied to a plasma processing apparatus configured to perform processing. In order to solve the above-mentioned problem, according to the first aspect of the present invention, a baffle plate is provided for separating a plasma region in a processing chamber from an exhaust path for exhausting the processing chamber, and the baffle plate enlarges the volume of the plasma region. It is characterized by being movable so as to be reduced.

According to this configuration, the plasma region can be enlarged or reduced by moving the baffle plate, so that the plasma generation range of the plasma region can be relatively widened or relatively narrowed. . As a result, by relatively widening the plasma generation range during processing, the ion energy of the plasma on the inner wall of the processing chamber decreases, and conversely, the ion energy increases on the processing target. Desired processing can be performed. Further, by relatively narrowing the plasma generation range at the time of cleaning the inside of the processing chamber, for example, the ion energy of the plasma on the wall surface of the processing chamber can be increased, and the removal rate of the deposit attached to the wall surface can be improved.

Furthermore, by arranging the baffle plate at a predetermined position during the processing, desired ion energy of the plasma can be distributed on the object to be processed and on the wall surface of the processing chamber. As a result, desired uniform processing can be performed on the object to be processed, and the rate of adhesion of deposits on the inner wall of the processing chamber can be reduced, and the throughput can be improved with a prolonged cleaning time. be able to.

Further, the invention according to claim 2 is characterized in that the baffle plate is disposed so as to surround the periphery of the electrode, and is movable up and down. According to this configuration, the baffle plate disposed around the electrode can move up and down, so that the plasma region formed in the processing chamber and the exhaust path can be easily separated, and the volume of the plasma region can be easily reduced. Increase / decrease control can be performed.

Further, the invention according to a third aspect is characterized in that the baffle plate has a plurality of through holes in a range exposed to the plasma region at a position where the baffle plate moves upward. According to this configuration, since a plurality of through holes are formed in the baffle plate, the plasma region and the exhaust path can be separated in a desired state by the baffle plate, and the exhaust gas in the plasma region can be uniformly separated. Can be exhausted into the exhaust path.

Further, in the invention according to claim 4, the baffle plate is arranged so as to surround the plasma region.
It is characterized in that it can move close to and away from the plasma region in the horizontal direction. According to such a configuration, the baffle plate disposed so as to surround the plasma region moves in the horizontal direction with respect to the plasma region so that the baffle plate can be easily and accurately controlled to increase or decrease the plasma region. A desired plasma generation range can be formed in the plasma region.

According to a fifth aspect of the present invention, a predetermined processing gas introduced into the processing chamber is converted into a plasma between the first electrode and the second electrode disposed in the processing chamber, and at least the first processing gas is converted into a plasma. In a plasma processing apparatus configured to perform predetermined plasma processing on an object fixed to one of an electrode and a second electrode, a plasma region formed between the first electrode and the second electrode A third electrode is provided in the inside, and the third electrode is vertically movable. According to this configuration, since the third electrode arranged in the plasma region moves up and down, it is possible to electrically control the increase and decrease of the plasma region. As a result, the plasma generation range in the plasma generation space can be easily controlled without considering physical parameters such as the amount of exhaust in the processing chamber and the pressure atmosphere in the processing chamber.

Further, the invention according to claim 6 is characterized in that the third electrode has a mesh shape. According to this configuration, since the third electrode is in a mesh shape, the third electrode is not obstructed by a gas path such as a supply path of a gas introduced into the processing chamber, for example, a processing gas supply path or an exhaust path of exhaust gas in the processing chamber. Three electrodes can be arranged in the plasma region. As a result, a plasma in a desired state can be excited in the plasma generation range of the plasma region, and the plasma generation range can be controlled in a desired state by the third electrode.

Further, the invention according to claim 7 is characterized in that the third electrode has a plate shape with a large number of through holes. According to this configuration, since the third electrode has a large number of through holes,
As in the invention described in (1), the third electrode can be arranged in the plasma region without obstructing the gas path formed in the processing chamber.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which a plasma processing apparatus according to the present invention is applied to an etching apparatus will be described below in detail with reference to the accompanying drawings. (First Embodiment) FIG. 1 shows a schematic cross section of an etching apparatus 100 according to a first embodiment of the present invention. The processing chamber 102 of the etching apparatus 100 is made of a conductive material, for example, aluminum, and is formed in a substantially cylindrical processing container 104 that can be opened and closed in an airtight manner. The processing container 104 is grounded via a ground wire 106.

At the bottom of the processing chamber 102, an insulating support plate 108 is disposed. On the insulating support plate 108, an object to be processed, for example, a semiconductor wafer (hereinafter, referred to as "wafer") W is placed. A substantially cylindrical susceptor 110 that can be placed and constitutes a lower electrode is disposed. This susceptor 1
Reference numeral 10 is made of a conductive material, for example, aluminum, and is configured to be supported by an elevating shaft 112 penetrating through the insulating support plate 108 and the bottom of the processing container 104. Further, the elevating shaft 112 is connected to a drive mechanism (not shown) provided outside the processing chamber 102. Therefore, by the operation of the drive mechanism, the susceptor 110 is configured to be able to move up and down as shown by the reciprocating arrow A in FIG. In addition, a stretchable airtight member, for example, a bellows 114 is provided between the susceptor 110 and the insulating support plate 108.

The susceptor 110 is provided with a temperature control mechanism (not shown) therein so that the wafer W mounted on the susceptor 110 can be maintained at a desired temperature. . An electrostatic chuck (not shown) is arranged on the mounting surface of the susceptor 110, and the wafer W
In a desired state.
Further, a substantially annular focus ring 116 made of an insulating material is provided at an outer edge of the mounting surface of the susceptor 110. Therefore, the plasma can be effectively incident on the wafer W by the focus ring 116, and a desired uniform processing can be performed on the wafer W.

Further, an exhaust pipe 126 forming an exhaust path for exhausting the atmosphere in the processing chamber 102 is connected to a lower side wall of the processing chamber 102. Therefore, the exhaust pipe 12
The inside of the processing chamber 102 is reduced to a predetermined reduced pressure atmosphere, for example, 1 mTorr by the operation of an unillustrated evacuation mechanism connected to 6.
It is configured so that it can be evacuated to a reduced pressure of about 100 mTorr.

A baffle plate 132 applicable to the present embodiment is disposed around the susceptor 110. The baffle plate 132 is provided for partitioning the above-described exhaust path and the inside of the processing chamber 102 for performing the etching process, and for preventing plasma from flowing into a lower space in the processing chamber 102 where the exhaust path is formed. Have been. The baffle plate 132 is formed of a plasma-resistant material, for example, aluminum or stainless steel whose surface is anodized. Further, the baffle plate 132
As shown in FIG. 2, it is composed of a sleeve 132a surrounding the susceptor 110 and a collar 132b projecting outward from the upper end of the sleeve 132a.

The baffle plate 132 has a structure in which a plurality of through holes 134 are formed over the entire surface of the baffle plate 132. In the example shown in FIG. 2, the through-hole 134 is formed as a vertically long hole arranged so as to cross the sleeve 132a and the collar 132b, but the present invention is not limited to this example. For example, as shown in FIG. 3, the sleeve portion 132a and the collar portion 132b have
Each of the elongated holes 134a and 134b may be formed separately, and as shown in FIG. 4, a substantially circular or substantially elliptical shape is formed over the entire surface of the sleeve portion 132a and the collar portion 132b. A configuration in which the through hole 134c is formed may be employed.

Further, the baffle plate 132 is
The lifting shaft 136 is connected to a lifting mechanism (not shown). Therefore, as shown in FIGS. 5A and 5B, the baffle plate 132 is configured to be vertically movable via an elevating shaft 136 by the operation of an elevating mechanism (not shown).

Baffle plate 13 applicable to this embodiment
2 is configured as described above. When the baffle plate 132 is disposed at a relatively lower position with this configuration, for example, as shown in FIG. 5A, the baffle plate 132 is moved to the upper surface of the collar 132b and the surface of the wafer W on the susceptor 110. When moved so as to be disposed substantially on the same plane, a relatively large volume plasma region can be secured. As a result, the plasma generation range in the plasma region is expanded, the ion energy of the plasma on the inner wall surface of the processing chamber 102 is reduced, and the ion energy on the wafer W is increased. In addition, desired uniform processing at a high etching rate can be performed. Further, when the baffle plate 132 is disposed at a relatively lower position, the exhaust gas in the processing chamber 102 enters the exhaust path through the through hole 134 formed in the collar 132b of the baffle plate 132. It is configured to be exhausted.

Further, the baffle plate 132 is provided in FIG.
As shown in (b), by operation of a lifting mechanism (not shown), the upper portion of the processing chamber 102, that is, the upper surface of the collar portion 132 b of the baffle plate 132 is disposed higher than the mounting surface of the susceptor 110. So that it can be raised. In this case, namely, the baffle plate 132
Is relatively high, the volume of the plasma region in the processing chamber 102 can be reduced. Therefore, in the present embodiment, when cleaning the inside of the processing chamber 102, the baffle plate 132 is relatively raised and the plasma region is relatively narrowed, so that, for example, the inside of the processing chamber 102 exposed to the plasma atmosphere is exposed. It is possible to increase the ion energy of the plasma on the wall surface. As a result, it is possible to improve the removal rate of the deposit attached to the surface of the inner wall surface of the processing chamber 102 and remove the deposit in a desired state. Further, when the baffle plate 132 is disposed at a relatively upper position, the exhaust gas in the processing chamber 102 passes through the through holes 134 formed in the sleeve portion 132a and the collar portion 132b of the baffle plate 132. , And is exhausted into the exhaust path.

Further, in the present embodiment, the baffle plate 132 is placed at a position where the desired processing can be performed on the wafer W and the adhered substance adhered to the inner wall surface of the processing chamber 102 is removed. It can also be arranged at a position where it can be removed. In this case, it is possible to remove the deposits on the inner wall surface of the processing chamber 102 while performing the desired processing on the wafer W, so that the cleaning time in the processing chamber 102 is greatly extended. Can be.

Returning to FIG. 1, a substantially disc-shaped upper electrode 118 made of a conductive material is disposed at a position facing the mounting surface of the susceptor 110.
Is mounted on the ceiling of the processing chamber 102. Also, a space 118a is provided in the upper electrode 118.
Are formed on the susceptor side of the upper electrode 118, and a large number of gas discharge holes 118b are formed to communicate the space 118a with the inside of the processing chamber 102. Further, a gas introduction pipe 124 is connected to a substantially upper center of the space 118a, and the gas introduction pipe 124 is connected to a gas supply source (not shown). Therefore, during processing, a predetermined processing gas is supplied from the gas supply source to the gas introduction pipe 124 and the space 118.
a and the gas is discharged uniformly to the surface to be processed of the wafer W placed on the susceptor 110 via the gas discharge holes 118b.

Further, around the outer side wall of the processing chamber 102,
A plurality of magnets 128 are arranged in a substantially disk shape, and each magnet 128 forms a predetermined magnetic field in a plasma generation range in the processing chamber 102. Therefore, the excited plasma is uniformly guided in the direction of the surface to be processed of the wafer W by the magnetic field formed in the plasma generation range, and a desired uniform processing can be performed on the wafer.

Next, a high-frequency power supply system of the etching apparatus 100 will be described. A high-frequency power supply 138 is connected to the susceptor 110 via a matching unit 130. At the time of processing, for example, a high frequency power of 13.56 MHz is applied from the high frequency power supply 138 to the susceptor 110 via the matching unit 130. as a result,
The processing gas introduced into the processing chamber 102 is dissociated into plasma, and a desired etching process is performed on the wafer W by the plasma.

Next, the operation of the etching apparatus 100 configured as described above will be described. First, a description will be given of an etching process. The wafer W is loaded into the processing chamber 102 via a gate valve (not shown) provided on a side surface of the processing chamber 102. At this time, the susceptor 110 and the baffle plate 132 are lowered to a predetermined transfer position so as not to hinder the operation of a transfer arm (not shown) for transferring the wafer W.

Next, the susceptor 1 on which the wafer W is mounted
The 10 and the baffle plate 132 are raised to a predetermined processing position as shown in FIG. Further, a predetermined processing gas is introduced into the processing chamber 102 and the processing chamber 1
02 is evacuated. At this time, the exhaust gas in the processing chamber 102 is exhausted in the exhaust path via a through hole 134 formed in the collar 132b of the baffle plate 132.

Next, by applying a predetermined high frequency power to the susceptor 110, the processing gas introduced into the processing chamber 102 is turned into a plasma, and the wafer W is subjected to a predetermined etching process by the plasma. . Next, after the completion of the etching process, the susceptor 110 and the baffle plate 132 are again lowered to the transfer position, the wafer W is transferred to the outside of the processing chamber 102 by the transfer arm, and the processing step ends.

Next, the cleaning of the inside of the processing chamber 102 will be described. First, for example, the susceptor 110 on which a dummy wafer to be used for cleaning is placed is raised to a predetermined processing position, and the baffle plate 132 is relatively raised above the processing position as shown in FIG. To a predetermined cleaning position. Next, in the same manner as in the processing, a predetermined plasma is excited in the plasma generation range of the plasma region to remove the deposits attached to the surface of the inner wall surface of the processing chamber 102. At this time, exhaust gas such as exhaust gas and reaction products in the processing chamber 102 is exhausted from the sleeve portion 1 of the baffle plate 132.
32a and a through hole 134 formed in the collar 132b
Done through. Next, after the removal of the deposits is completed, the susceptor 110 and the baffle plate 132 are lowered to the transfer position, and the dummy wafer on the susceptor 110 is removed, and then the cleaning process is completed.

Although the operation of the etching apparatus according to the first embodiment has been described above, the present invention is not limited to this example. That is, the gist of the present invention is that the baffle plate 1
Since the volume of the plasma region in the plasma processing chamber 102 is adjusted by the vertical movement of the nozzle 32, it goes without saying that any operation having such a feature belongs to the technical scope of the present invention. According to the present invention, depending on the type of processing to be performed, for example, during plasma ignition, the baffle plate 13
2 can be raised and the baffle plate 132 can be lowered during plasma processing. Conversely, the plasma plate 132 can be lowered during plasma ignition and the baffle plate 132 can be raised during plasma processing. By this operation, it is possible to select an optimum electrode interval at which the plasma is easily ignited depending on the pressure and gas type used, based on Paschen's law. Alternatively, by moving the baffle plate 132 up and down during the plasma processing, the plasma density and the ion energy in the processing chamber 102 can be adjusted. Thereby, SAC
Even in the case of performing complicated processing such as etching multiple films at once such as (self-aligned contact) process, the optimum etching is performed by changing the plasma density and ion energy according to the type of film. It can be carried out.

(Second Embodiment) Next, an etching apparatus according to a second embodiment of the present invention will be described with reference to FIGS. The basic configuration of the etching apparatus 200 is substantially the same as the etching apparatus according to the first embodiment of the present invention described with reference to FIGS. The members having the same reference numerals are given the same reference numerals, and the duplicate description will be omitted.

As shown in FIG. 6, this etching apparatus 2
00 is provided with a baffle plate 202 characteristic of the etching apparatus according to the present embodiment. The baffle plate 202 includes a horizontal baffle plate 202a that extends horizontally to surround the susceptor 110, and a vertical baffle plate 202 that extends vertically to surround a plasma region formed between the upper electrode 118 and the susceptor 110. 202b. The horizontal baffle plate 202a has substantially the same structure as the baffle plate of the conventional apparatus, and is formed from a plate made of anodized aluminum or stainless steel, for example, as shown in FIG. A large number of exhaust through-holes 204 are formed on the entire surface.

On the other hand, the vertical baffle plate 202b
As shown in FIGS. 7 and 8, the susceptor 110 is made of a plate curved along the arc, and a large number of exhaust through holes 206 are formed on the entire surface thereof. In the illustrated example, an example is shown in which a large number of exhaust through holes 206 are formed in the plate-shaped member. However, the present invention is not limited to this example. For example, as shown in FIG. From vertical baffle plate 20
2b may be configured. This vertical baffle plate 202b
Is connected to a horizontal drive shaft 210 which penetrates the side wall of the processing chamber 102, and can be moved in a horizontal direction along a reciprocating arrow shown in FIG. 6 by the operation of a drive mechanism (not shown). I have.

The second embodiment of the present invention has the above-described configuration. Therefore, by moving the vertical baffle plate 202b in the horizontal direction, the second embodiment has the same configuration as that of the first embodiment. The volume of the plasma region formed between the upper electrode 118 and the susceptor 110 can be adjusted. That is, as shown in FIG. 10A, when the vertical baffle plate 202b is located at the first position near the inner side wall of the processing chamber 102, a large volume plasma region can be secured. At the first position, the exhaust in the processing chamber 102 is performed through the through hole 204 formed in the horizontal baffle plate 202a.

By the way, according to the second embodiment,
The vertical baffle plate 202b is moved by a driving mechanism (not shown).
The baffle plate 202b can be moved in the horizontal direction, and the vertical baffle plate 202b is moved as shown in FIG.
By moving horizontally to the second position from the center of the inside of the chamber 2, the volume of the plasma region in the processing chamber 102 can be reduced. And in this second position,
Exhaust gas in the processing chamber 102 is supplied to the through hole 206 formed in the surface of the vertical baffle plate 202b and the horizontal baffle plate 20b.
This is performed through a through-hole 204 formed in the surface of 2a.

According to such a configuration, as in the first embodiment described above, at the time of plasma processing, FIG.
As shown in FIG.
It is retracted to the processing position on the inner side wall side, and at the time of cleaning, as shown in FIG.
By moving b to the cleaning position on the central side in the processing chamber 102, a desired plasma processing or cleaning in the processing chamber 102 can be performed while securing a plasma generation range with an optimum volume.

Although the operation of the plasma processing apparatus according to the second embodiment has been described above, the present invention is not limited to this example. The gist of the present invention is that the vertical baffle plate 202
Since the plasma region in the plasma processing chamber is adjusted by the horizontal separation and approach movement of b, it goes without saying that all configurations and operations having such features belong to the technical scope of the present invention.

For example, in the illustrated example, the baffle plate 202
Is composed of two members, the horizontal baffle plate 202a and the vertical baffle plate 202b, but the present invention is not limited to this example. For example, it is also possible to adopt a configuration in which the horizontal baffle plate is omitted, the baffle plate is constituted only by the vertical baffle plate extending below the processing chamber, and the vertical baffle plate is moved in the horizontal direction.

(Third Embodiment) Next, FIGS.
A preferred embodiment of the plasma processing apparatus according to the third embodiment of the present invention will be described with reference to FIG. As shown, the plasma processing apparatus according to the third embodiment is a so-called triode type plasma processing apparatus 300.
The basic configuration is the same as the configuration of the plasma processing apparatus according to the first and second embodiments described above. However, in the case of the present embodiment, the electrode for plasma generation is used. A third electrode 302 is disposed as a third electrode between the upper electrode 118 which forms the susceptor 110 to which bias power can be applied. The upper electrode 118
Is connected to a high frequency power supply 306 via a matching circuit 304, and can apply a high frequency power of, for example, 13.56 MHz during processing. The upper electrode 118 is configured to be attached to the ceiling of the processing chamber 102 via the insulating member 301.

The feature of the third embodiment lies in the structure of the third electrode 302 disposed between the upper electrode 118 and the susceptor 110. The third electrode 302 is connected to the processing chamber 1
02 is supported by an elevating shaft 308 extending freely through the ceiling of the device 02, and is configured to be able to move up and down by a drive mechanism (not shown) as shown by a reciprocating arrow in the figure. This third electrode 302
Is formed of a mesh material 310a as shown in FIG. 12, for example, and includes predetermined particles contained in the plasma generated and diffused in the plasma generation region on the upper electrode 118 side.
For example, the susceptor 11 can selectively pass ion particles.
It can be guided to the 0 side plasma processing region.

Incidentally, the third electrode 302 can be held at the ground potential or at a predetermined bias potential depending on the process. The configuration of the third electrode 302 is not limited to the configuration as shown in FIG. 12. For example, as shown in FIG. 13, a plate having a plurality of substantially circular or substantially elliptical through holes 310 b is formed. Shaped ones can be used.

According to such a configuration, FIG.
As shown in (b), the third electrode 302 in the plasma region
Is moved up and down, for example, the volume ratio of the plasma generation region on the upper electrode 118 side and the plasma processing region on the susceptor 110 side can be adjusted according to the process, and optimal plasma processing and cleaning are performed. It is possible.

For example, when loading / unloading a wafer W,
As shown in FIG. 14A, the third electrode 302 can be raised to the upper electrode 118 side so as not to interfere with the transfer arm. And during the etching process,
As shown in FIG. 14A, the third electrode 302 is lowered toward the susceptor 110, and the plasma generation range can be widened, so that desired ion energy can be generated on the wafer W. Further, at the time of cleaning, as shown in FIG. 14B, the third electrode 302 can be raised to the upper electrode 118 side again as shown in FIG. 14A to narrow the plasma generation range. The deposits attached to the surface of the inner wall surface of the processing chamber 102 can be efficiently removed.

According to this configuration, the following plasma control can be performed during the etching process.
For example, at the time of plasma ignition, as shown in FIG. 14B, the third electrode 302 can be lowered to the susceptor 110 side to enlarge the plasma generation area. Further, at the time of the plasma processing, as shown in FIG. 14A again, the third electrode 302 is raised to the upper electrode 118 side, so that the plasma processing area can be enlarged. According to Paschen's law, there is an optimum plasma ignition distance depending on the pressure and gas type used. Therefore, the optimum electrode spacing can be selected according to the processing conditions (especially the etching rate, etching shape, selectivity to resist, selectivity to substrate), and optimum etching can be performed. In addition, damage can be reduced by changing the electrode interval during over-etching, and the etched shape can be made more favorable. Furthermore, recently, etching and subsequent resist ashing are often performed in the same processing chamber. In the conventional apparatus, the workpiece may be damaged by ions present in the plasma during ashing, but in the apparatus of the present invention, the damage is reduced by reducing or stopping the bias power as much as possible by changing the electrode spacing and the supply voltage. Almost no ashing is possible. As described above, according to the present invention, optimal processing can be performed by adjusting the position of the third electrode 302 disposed between the upper electrode 118 and the susceptor 110 according to the process stage.

While the preferred embodiments of the plasma processing apparatus according to the present invention have been described with reference to the accompanying drawings, the present invention is not limited to such examples.
It is clear that a person skilled in the art can conceive various changes or modifications within the scope of the technical idea described in the claims, and those changes naturally fall within the technical scope of the present invention. It is understood to belong.

[0049]

As described above, according to the present invention,
By appropriately moving the arrangement of the baffle plate and the third electrode, the plasma generation range in the plasma region can be relatively widened or relatively narrowed. As a result, by relatively widening the plasma generation range during the plasma processing, the ion energy on the processing chamber wall surface can be reduced and the ion energy on the processing object can be increased. Can be applied. Also, during cleaning, by relatively narrowing the plasma generation range, it is possible to increase the ion energy to the inner wall of the processing chamber, to efficiently remove deposits adhering to the wall, and to improve the cleaning speed. Can be.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing an etching apparatus according to a first embodiment to which the present invention can be applied.

FIG. 2 is a schematic perspective view showing a baffle plate of the etching apparatus shown in FIG.

FIG. 3 is a schematic perspective view showing a baffle plate according to another embodiment applicable to the etching apparatus shown in FIG.

FIG. 4 is a schematic perspective view showing a baffle plate according to another embodiment applicable to the etching apparatus shown in FIG.

FIG. 5 is a schematic explanatory diagram for explaining an operation of a baffle plate in the etching apparatus shown in FIG.

FIG. 6 is a schematic sectional view showing an etching apparatus according to a second embodiment to which the present invention can be applied.

FIG. 7 is a schematic explanatory diagram for explaining a vertical baffle plate of the etching apparatus shown in FIG. 6;

FIG. 8 is a schematic perspective view showing a vertical baffle plate of the etching apparatus shown in FIG.

FIG. 9 is a schematic perspective view showing a vertical baffle plate according to another embodiment applicable to the etching apparatus shown in FIG.

FIG. 10 is a schematic explanatory view for explaining an operation of a vertical baffle plate of the etching apparatus shown in FIG. 6;

FIG. 11 is a schematic sectional view showing an etching apparatus according to a third embodiment to which the present invention can be applied.

FIG. 12 is a schematic perspective view showing a third electrode applicable to the etching apparatus shown in FIG.

FIG. 13 is a schematic perspective view showing a third electrode according to another embodiment applicable to the etching apparatus shown in FIG.

FIG. 14 is a schematic explanatory diagram for explaining an operation of a third electrode of the etching apparatus shown in FIG.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 etching apparatus 102 processing chamber 104 processing vessel 110 susceptor 118 upper electrode 126 exhaust pipe 132 baffle plate W wafer

Claims (7)

[Claims] The present invention is configured such that a predetermined processing gas introduced into a processing chamber is turned into plasma and a predetermined plasma processing is performed on an object placed on an electrode disposed in the processing chamber. In the plasma processing apparatus, a baffle plate that separates a plasma region in the processing chamber from an exhaust path that exhausts the processing chamber is provided, and the baffle plate is movable so as to expand and contract the volume of the plasma region. Characteristic plasma processing equipment. 2. The plasma processing apparatus according to claim 1, wherein the baffle plate is arranged so as to surround the periphery of the electrode, and is movable up and down. 3. The plasma processing apparatus according to claim 2, wherein the baffle plate has a plurality of through-holes in a range exposed to the plasma region at an upper moving position. 4. The plasma according to claim 1, wherein the baffle plate is disposed so as to surround the plasma region, and is movable in a horizontal direction with respect to the plasma region. Processing equipment. 5. A process gas, which is introduced into a processing chamber, is turned into plasma between a first electrode and a second electrode arranged in the processing chamber, and at least the first electrode or the second electrode is turned into a plasma. In a plasma processing apparatus configured to perform a predetermined plasma process on an object to be processed fixed to one of them, a third region is formed in a plasma region formed between the first electrode and the second electrode. An electrode is provided, and the third electrode is vertically movable. 6. The plasma processing apparatus according to claim 5, wherein the third electrode has a mesh shape. 7. The plasma processing apparatus according to claim 5, wherein the third electrode has a plate shape having a plurality of through holes.