JPH10303550A - Pretreatment liquid for plating using conductive polymer film - Google Patents
Pretreatment liquid for plating using conductive polymer filmInfo
- Publication number
- JPH10303550A JPH10303550A JP10846997A JP10846997A JPH10303550A JP H10303550 A JPH10303550 A JP H10303550A JP 10846997 A JP10846997 A JP 10846997A JP 10846997 A JP10846997 A JP 10846997A JP H10303550 A JPH10303550 A JP H10303550A
- Authority
- JP
- Japan
- Prior art keywords
- polymer film
- conductive polymer
- acid
- hole
- pretreatment liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001940 conductive polymer Polymers 0.000 title claims abstract description 17
- 239000007788 liquid Substances 0.000 title claims abstract description 11
- 238000007747 plating Methods 0.000 title claims abstract description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 10
- 150000003839 salts Chemical class 0.000 claims abstract description 7
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 21
- 239000007864 aqueous solution Substances 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 239000002736 nonionic surfactant Substances 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 150000003460 sulfonic acids Chemical class 0.000 claims 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical compound OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 abstract 2
- 239000004094 surface-active agent Substances 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 1
- FZUJWWOKDIGOKH-UHFFFAOYSA-N sulfuric acid hydrochloride Chemical compound Cl.OS(O)(=O)=O FZUJWWOKDIGOKH-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- -1 ferric sulfate Chemical compound 0.000 description 10
- 230000001590 oxidative effect Effects 0.000 description 10
- 239000011889 copper foil Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 6
- 239000012985 polymerization agent Substances 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- 229960002796 polystyrene sulfonate Drugs 0.000 description 5
- 239000011970 polystyrene sulfonate Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 229920002114 octoxynol-9 Polymers 0.000 description 3
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 2
- 229910000360 iron(III) sulfate Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QKZIVVMOMKTVIK-UHFFFAOYSA-M anilinomethanesulfonate Chemical compound [O-]S(=O)(=O)CNC1=CC=CC=C1 QKZIVVMOMKTVIK-UHFFFAOYSA-M 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PYRZPBDTPRQYKG-UHFFFAOYSA-N cyclopentene-1-carboxylic acid Chemical compound OC(=O)C1=CCCC1 PYRZPBDTPRQYKG-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229940006186 sodium polystyrene sulfonate Drugs 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
Landscapes
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、両面以上の導電回
路層を有するプリント配線板の穴内壁に金属層を形成す
るために用いる導電性高分子膜を形成する前に用いる前
処理液に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pretreatment liquid used before forming a conductive polymer film used for forming a metal layer on an inner wall of a hole in a printed wiring board having a conductive circuit layer having two or more conductive circuits.
【0002】[0002]
【従来の技術】両面又は多層プリント配線板の穴内壁に
電気めっきを行い金属化する際に、予め穴内壁を導通さ
せる手段として、特表平4−507480号公報及び特
表平4−506125号公報に示されているように、従
来のような無電解銅めっきによらず、穴内壁の絶縁物表
面に、ピロール、フラン、チオフェンもしくはその誘導
体などの有機モノマーを化学的に酸化重合させて導電性
高分子膜を形成した後、電気めっきにより穴内壁を金属
化する方法が提案されている。2. Description of the Related Art Japanese Patent Application Laid-Open No. 4-507480 and Japanese Patent Application Laid-Open No. 506125/1992 disclose a method for electrically connecting the inner wall of a hole when performing metal plating by electroplating the inner wall of the hole on both sides or a multilayer printed wiring board. As shown in the official gazette, instead of the conventional electroless copper plating, an organic monomer such as pyrrole, furan, thiophene or a derivative thereof is chemically oxidized and polymerized on the insulating surface of the inner wall of the hole to conduct the electroconductive process. A method has been proposed in which after forming a conductive polymer film, the inner wall of the hole is metallized by electroplating.
【0003】すなわち、例えば、両面以上のプリント配
線板の所定箇所にドリルで穴明けし、次いで研磨、洗浄
などを含む洗浄活性化工程(デスミア工程)、さらに、
銅箔表面の粗化を行うソフトエッチング工程、被めっき
物表面の油脂分を除去するコンディショニング工程、重
合触媒となるマンガン酸化物層を形成する過マンガン酸
処理工程、有機モノマー付与工程、酸化重合工程により
絶縁物表面に導電性高分子膜が形成され、直接電気めっ
きを行い穴内壁を金属化していた。このうち、酸化重合
工程では、有機モノマーの酸化重合剤として、例えば硫
酸、塩酸、りん酸等の無機酸又は過硫酸塩、過酸化水
素、塩化第二鉄、硫酸第二鉄などの鉄(III) 塩及びこ
れらの混合液が使用されている。[0003] That is, for example, a hole is drilled in a predetermined portion of a printed wiring board on both sides or more, and then a cleaning activation step (desmear step) including polishing and cleaning, and further,
Soft etching process for roughening the surface of copper foil, conditioning process for removing oils and fats on the surface of the object to be plated, permanganic acid treatment process for forming a manganese oxide layer serving as a polymerization catalyst, organic monomer application process, oxidative polymerization process Thus, a conductive polymer film was formed on the surface of the insulator, and the inner wall of the hole was metallized by direct electroplating. Among them, in the oxidative polymerization step, as an oxidative polymerization agent of the organic monomer, for example, an inorganic acid such as sulfuric acid, hydrochloric acid, phosphoric acid or persulfate, hydrogen peroxide, ferric chloride, iron (III) such as ferric sulfate, etc. ) Salts and their mixtures are used.
【0004】[0004]
【発明が解決しようとする課題】ところが、上述した酸
化重合剤により、両面又は多層プリント配線板の貫通又
は非貫通穴の絶縁物表面を導電化する方法では、形成さ
れた導電層が均一でなく、貫通又は非貫通穴の導電性に
ばらつきがあるため、電気めっき後の穴内のめっき膜厚
が不均一になり、さらに導電化処理後の銅箔表面が、酸
化してしまうという課題があった。However, in the method of making the insulating surface of the penetrating or non-penetrating hole of the double-sided or multi-layer printed wiring board conductive by the above-mentioned oxidizing polymer, the formed conductive layer is not uniform. However, since the conductivity of the through or non-through holes varies, the thickness of the plated film in the holes after the electroplating becomes non-uniform, and further, the copper foil surface after the conductive treatment is oxidized. .
【0005】本発明は、両面又は多層プリント配線板の
穴内壁の絶縁物表面に導電性の良好な導電性高分子膜を
形成し、電気めっき後の穴内の均一なめっき膜厚を形成
する前処理液を提供することを目的とする。According to the present invention, a conductive polymer film having good conductivity is formed on an insulator surface on the inner surface of a hole of a double-sided or multilayer printed wiring board, and before forming a uniform plating film thickness in the hole after electroplating. It is intended to provide a processing solution.
【0006】[0006]
【課題を解決するための手段】本発明の導電性高分子膜
を用いるめっき前処理液は、両面以上の導電回路層を有
するプリント配線板の穴内壁に金属層を形成するために
用いる導電性高分子膜を形成する前に用いる前処理液で
あって、硫酸、塩酸、りん酸等の無機酸と、スルホン酸
又はその塩と、ノニオン系界面活性剤を含む水溶液の3
成分から成ることを特徴とする。According to the present invention, there is provided a pretreatment liquid for plating using a conductive polymer film, which is used for forming a metal layer on the inner wall of a hole of a printed wiring board having a conductive circuit layer having two or more surfaces. A pretreatment liquid used before forming a polymer film, which is an aqueous solution containing an inorganic acid such as sulfuric acid, hydrochloric acid, phosphoric acid, and the like, a sulfonic acid or a salt thereof, and a nonionic surfactant.
It is characterized by consisting of components.
【0007】[0007]
【発明の実施の形態】本発明に用いる無機酸には、硫
酸、塩酸、りん酸等が使用でき、その含有量は、0.1
〜50容量%の範囲が好ましい。含有量が0.1%容量
未満であると、酸化重合が不充分で、導電性が低下し、
50容量%を越えると、効果の改善がなく経済的でな
い。DETAILED DESCRIPTION OF THE INVENTION As the inorganic acid used in the present invention, sulfuric acid, hydrochloric acid, phosphoric acid and the like can be used.
The range of 5050% by volume is preferred. When the content is less than 0.1% by volume, the oxidative polymerization is insufficient, the conductivity is reduced,
If it exceeds 50% by volume, the effect is not improved and it is not economical.
【0008】本発明に用いるスルホン酸又はその塩とし
ては、分子量が5000から600万で、その一般式
が、下記の式1で示されるものが好ましく、具体的に
は、ポリスチレンスルホン酸、ポリスチレンスルホン酸
ナトリウム、ポリスチレンスルホン酸カリウム、ポリス
チレンスルホン酸アンモニウム、ポリスチレンスルホン
酸リチウム等が使用できる。The sulfonic acid or a salt thereof used in the present invention preferably has a molecular weight of 5,000 to 6,000,000 and a general formula represented by the following formula 1, specifically, polystyrene sulfonic acid, polystyrene sulfonic acid and the like. Sodium acid, potassium polystyrene sulfonate, ammonium polystyrene sulfonate, lithium polystyrene sulfonate and the like can be used.
【0009】[0009]
【化3】 Embedded image
【0010】その含有量は、0.1〜100g/lの範
囲が好ましく、含有量が0.1g/l未満であると、本
発明の目的を達成せず、100g/lを越えると、効果
の改善がなく経済的でない。The content is preferably in the range of 0.1 to 100 g / l. If the content is less than 0.1 g / l, the object of the present invention will not be achieved. It is not economical without improvement.
【0011】本発明に用いるノニオン系界面活性剤とし
ては、一般式が、下記の式2で示されるものが好まし
く、具体的には、ポリオキシエチレンラウリルエーテ
ル、ポリオキシエチレンセチルエーテル、ポリオキシエ
チレンオレイルエーテル、ポリオキシエチレンオクチル
フェニルエーテル、ポリオキシエチレンノニルフェニル
エーテル等が使用でき、その含有量は、0.1〜50g
/lの範囲が好ましい。含有量が0.1g/l未満であ
ると、本発明の目的を達成せず、50g/lを越える
と、効果の改善がなく経済的でない。また、処理温度は
10℃〜30℃、処理時間は10秒〜5分が好ましい。As the nonionic surfactant used in the present invention, those having a general formula represented by the following formula 2 are preferable. Specifically, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene Oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether and the like can be used, and the content is 0.1 to 50 g.
/ L range is preferred. If the content is less than 0.1 g / l, the object of the present invention will not be achieved, and if it exceeds 50 g / l, the effect will not be improved and it will not be economical. Further, the processing temperature is preferably from 10 ° C to 30 ° C, and the processing time is preferably from 10 seconds to 5 minutes.
【化4】 Embedded image
【0012】[0012]
実施例1 表裏両面に銅箔(18μm)を貼り合わせたガラスエポ
キシ銅張り積層板の所定箇所に、ドリリングにより直径
0.6mmの貫通穴を形成した。次いで、表面研磨により
バリを除去した後、過硫酸ナトリウム80g/l、濃硫
酸20ml/lからなるソフトエッチング液で室温で3分
間処理した。さらに充分な水洗を行なった後、クリーナ
ーコンディショナーCLC−301(日立化成工業株式
会社製、商品名)50ml/lで60℃、5分処理した。
さらに充分な水洗を行なった後、過マンガン酸水溶液と
して過マンガン酸カリウム60g/lからなる水溶液で
85℃、3分間処理した。その後、充分な水洗を行い、
次いでチオフェン誘導体1%、約1%の乳化剤を含む有
機モノマー水溶液で25℃、2分間処理した後、酸化重
合剤としてポリスチレンスルホン酸ナトリウム1g/
l、ポリオキシエチレンノニルフェニルエーテル3g/
l、硫酸20ml/lからなる水溶液で25℃、2分間処
理して貫通穴の絶縁物表面に導電性高分子膜を形成させ
た後、貫通穴の抵抗値を測定および銅箔表面の観察をし
た。Example 1 A through-hole having a diameter of 0.6 mm was formed by drilling at a predetermined position of a glass epoxy copper-clad laminate in which copper foil (18 μm) was bonded on both sides. Next, after removing burrs by surface polishing, the substrate was treated with a soft etching solution containing 80 g / l of sodium persulfate and 20 ml / l of concentrated sulfuric acid at room temperature for 3 minutes. After sufficient washing with water, the plate was treated with 50 ml / l of a cleaner conditioner CLC-301 (trade name, manufactured by Hitachi Chemical Co., Ltd.) at 60 ° C. for 5 minutes.
After sufficient washing with water, the mixture was treated at 85 ° C. for 3 minutes with an aqueous solution of potassium permanganate at 60 g / l as an aqueous solution of permanganate. After that, wash enough water,
Then, after treatment with an organic monomer aqueous solution containing 1% of a thiophene derivative and about 1% of an emulsifier at 25 ° C. for 2 minutes, 1 g of sodium polystyrene sulfonate /
1, polyoxyethylene nonyl phenyl ether 3 g /
After treatment with an aqueous solution of 20 ml / l of sulfuric acid at 25 ° C. for 2 minutes to form a conductive polymer film on the insulator surface of the through hole, the resistance value of the through hole is measured and the copper foil surface is observed. did.
【0013】実施例2 実施例1において酸化重合剤として、ポリスチレンスル
ホン酸カリウム2g/l、ポリオキシエチレンオクチル
フェニルエーテル5g/l、硫酸30ml/lからなる水
溶液で25℃、2分間処理した以外は同様の処理を行
い、貫通穴の抵抗値を測定および銅箔表面の観察をし
た。Example 2 The procedure of Example 1 was repeated except that the polymer was treated at 25 ° C. for 2 minutes with an aqueous solution consisting of potassium polystyrene sulfonate 2 g / l, polyoxyethylene octyl phenyl ether 5 g / l, and sulfuric acid 30 ml / l as the oxidative polymerization agent. The same treatment was performed, the resistance value of the through hole was measured, and the surface of the copper foil was observed.
【0014】実施例3 実施例2において酸化重合剤として、ポリスチレンスル
ホン酸アンモニウム5g/l、ポリオキシエチレンオク
チルフェニルエーテル3g/l、硫酸15ml/lからな
る水溶液で25℃、2分間処理した以外は同様の処理を
行い、貫通穴の抵抗値を測定および銅箔表面の観察をし
た。Example 3 The procedure of Example 2 was repeated except that the polymer was treated at 25 ° C. for 2 minutes with an aqueous solution containing 5 g / l of ammonium polystyrene sulfonate, 3 g / l of polyoxyethylene octyl phenyl ether and 15 ml / l of sulfuric acid as the oxidative polymerization agent. The same treatment was performed, the resistance value of the through hole was measured, and the surface of the copper foil was observed.
【0015】実施例4 実施例3において酸化重合剤としてポリスチレンスルホ
ン酸1g/l、ポリオキシエチレンノニルフェニルエー
テル5g/l、硫酸5ml/lからなる水溶液で25℃、
2分間処理した以外は同様の処理を行い、貫通穴の抵抗
値を測定および銅箔表面の観察をした。Example 4 In Example 3, an aqueous solution containing 1 g / l of polystyrene sulfonic acid, 5 g / l of polyoxyethylene nonylphenyl ether and 5 ml / l of sulfuric acid as an oxidative polymerization agent was used at 25 ° C.
The same treatment was performed except that the treatment was performed for 2 minutes, the resistance value of the through hole was measured, and the surface of the copper foil was observed.
【0016】比較例1 実施例4において酸化重合剤として、硫酸10ml/l、
過硫酸ナトリウム10g/lからなる水溶液で25℃、
2分間処理した以外は同様の処理を行い、貫通穴の抵抗
値を測定および銅箔表面の観察をした。Comparative Example 1 In Example 4, 10 ml / l of sulfuric acid was used as an oxidative polymerization agent.
25 ° C. with an aqueous solution consisting of 10 g / l of sodium persulfate,
The same treatment was performed except that the treatment was performed for 2 minutes, the resistance value of the through hole was measured, and the surface of the copper foil was observed.
【0017】比較例2 実施例4において酸化重合剤として、硫酸20ml/l、
硫酸第二鉄5g/lからなる水溶液で25℃、2分間処
理した以外は同様の処理を行い、貫通穴の抵抗値を測定
および銅箔表面の観察をした。実施例1から4および比
較例1から2の結果を表1に示す。Comparative Example 2 In Example 4, as an oxidative polymerization agent, sulfuric acid 20 ml / l,
The same treatment was performed except that the treatment was performed at 25 ° C. for 2 minutes with an aqueous solution containing 5 g / l of ferric sulfate, the resistance value of the through hole was measured, and the copper foil surface was observed. Table 1 shows the results of Examples 1 to 4 and Comparative Examples 1 and 2.
【0018】[0018]
【表1】 表1に示すように、実施例の前処理液で形成された導電
性高分子膜は、比較例のものと比べ、導電性が良好でか
つ均一である。[Table 1] As shown in Table 1, the conductive polymer film formed with the pretreatment liquid of the example had better and more uniform conductivity than that of the comparative example.
【0019】[0019]
【発明の効果】以上に説明したように、本発明によっ
て、両面又は多層プリント配線板の貫通又は非貫通穴の
絶縁物表面に、導電性が良好でかつ均一な導電性高分子
膜を形成することの可能な導電性高分子膜を用いるめっ
き前処理液を提供することができる。As described above, according to the present invention, a conductive polymer film having good and uniform conductivity is formed on the insulating surface of a through hole or a non-through hole of a double-sided or multilayer printed wiring board. It is possible to provide a plating pretreatment liquid using a conductive polymer film capable of being used.
Claims (2)
線板の穴内壁に金属層を形成するために用いる導電性高
分子膜を形成する前に用いる前処理液であって、硫酸、
塩酸、りん酸等の無機酸と、スルホン酸又はその塩と、
ノニオン系界面活性剤を含む水溶液の3成分から成るこ
とを特徴とする導電性高分子膜を用いるめっきの前処理
液。1. A pretreatment liquid used before forming a conductive polymer film used for forming a metal layer on an inner wall of a hole of a printed wiring board having a conductive circuit layer having two or more sides, comprising sulfuric acid,
Inorganic acids such as hydrochloric acid and phosphoric acid, and sulfonic acids or salts thereof,
A pretreatment liquid for plating using a conductive polymer film, comprising three components of an aqueous solution containing a nonionic surfactant.
0〜600万の範囲で、一般式が、下記の式1で示さ
れ、ノニオン系界面活性剤が、下記の式2で示されるこ
とを特徴とする請求項1に記載の導電性高分子膜を用い
るめっきの前処理液。 【化1】 【化2】 2. A sulfonic acid or a salt thereof having a molecular weight of 500.
The conductive polymer film according to claim 1, wherein the general formula is represented by the following formula 1 and the nonionic surfactant is represented by the following formula 2 within a range of 0 to 6,000,000. Pretreatment solution for plating using. Embedded image Embedded image
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10846997A JPH10303550A (en) | 1997-04-25 | 1997-04-25 | Pretreatment liquid for plating using conductive polymer film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10846997A JPH10303550A (en) | 1997-04-25 | 1997-04-25 | Pretreatment liquid for plating using conductive polymer film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10303550A true JPH10303550A (en) | 1998-11-13 |
Family
ID=14485555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP10846997A Pending JPH10303550A (en) | 1997-04-25 | 1997-04-25 | Pretreatment liquid for plating using conductive polymer film |
Country Status (1)
Country | Link |
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JP (1) | JPH10303550A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018510254A (en) * | 2015-01-20 | 2018-04-12 | マクダーミッド エンソン インコーポレイテッド | Composition comprising a high molecular weight acid suitable for forming a conductive polymer on a dielectric substrate |
-
1997
- 1997-04-25 JP JP10846997A patent/JPH10303550A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018510254A (en) * | 2015-01-20 | 2018-04-12 | マクダーミッド エンソン インコーポレイテッド | Composition comprising a high molecular weight acid suitable for forming a conductive polymer on a dielectric substrate |
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