JPH10241995A - Cr element - Google Patents
Cr elementInfo
- Publication number
- JPH10241995A JPH10241995A JP4064097A JP4064097A JPH10241995A JP H10241995 A JPH10241995 A JP H10241995A JP 4064097 A JP4064097 A JP 4064097A JP 4064097 A JP4064097 A JP 4064097A JP H10241995 A JPH10241995 A JP H10241995A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- resistor
- lower electrode
- part electrode
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000003990 capacitor Substances 0.000 claims abstract description 28
- 239000011521 glass Substances 0.000 claims abstract description 13
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 239000004020 conductor Substances 0.000 claims abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 16
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010953 base metal Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はコンデンサ機能と抵
抗機能とを有するCR素子に係り、特に、小型で、実装
面積の小さいCR素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CR device having a capacitor function and a resistance function, and more particularly to a small CR device having a small mounting area.
【0002】[0002]
【従来の技術】コンピュータの集積回路とアースとの間
には、信号中のノイズを除去するために、CR素子が挿
入される。2. Description of the Related Art A CR element is inserted between an integrated circuit of a computer and ground to remove noise in a signal.
【0003】図2は、このような用途に用いられる従来
のCR素子を示す断面図である。このCR素子は、アル
ミナ基板1上の一半側に、コンデンサとしての下部電極
2A、誘電体層3及び上部電極4が積層形成され、他半
側には、下部電極2Aと下部電極2Bとの間に抵抗層5
が設けられて抵抗体が形成されている。このアルミナ基
板1の両端縁に端子電極6A,6Bが設けられている。
そして、コンデンサ部分及び抵抗体部分の全体が保護ガ
ラス層7で被覆されている。FIG. 2 is a sectional view showing a conventional CR element used for such a purpose. In this CR element, a lower electrode 2A as a capacitor, a dielectric layer 3 and an upper electrode 4 are laminated on one half of the alumina substrate 1, and the other half of the CR element is provided between the lower electrode 2A and the lower electrode 2B. To resistance layer 5
Are provided to form a resistor. Terminal electrodes 6A and 6B are provided on both end edges of the alumina substrate 1.
Then, the whole of the capacitor portion and the resistor portion is covered with the protective glass layer 7.
【0004】[0004]
【発明が解決しようとする課題】上記従来のCR素子で
は、コンデンサと抵抗体とを基板上に並設するため、素
子面積が大きく、従って、大きな実装面積を必要とする
という欠点がある。The above-mentioned conventional CR element has a drawback that the capacitor and the resistor are juxtaposed on the substrate, so that the element area is large and therefore a large mounting area is required.
【0005】本発明は上記従来の問題点を解決し、素子
面積の小さいCR素子を提供することを目的とする。An object of the present invention is to solve the above conventional problems and to provide a CR element having a small element area.
【0006】[0006]
【課題を解決するための手段】本発明のCR素子は、絶
縁基板と、該絶縁基板の一方の面に積層形成された下部
電極、誘電体層及び上部電極よりなるコンデンサと、該
絶縁基板の他方の面に積層形成された下部電極、抵抗層
及び上部電極よりなる抵抗体と、を有するCR素子であ
って、該絶縁基板にはスルーホールが設けられており、
前記コンデンサの下部電極と抵抗体の下部電極とは、該
スルーホール内に設けられた導電性材料により導通され
ていることを特徴とする。A CR element according to the present invention comprises: an insulating substrate; a capacitor comprising a lower electrode, a dielectric layer and an upper electrode laminated on one surface of the insulating substrate; A CR element having a lower electrode laminated on the other surface, a resistor composed of a resistive layer and an upper electrode, and a through-hole provided in the insulating substrate;
The lower electrode of the capacitor and the lower electrode of the resistor are electrically connected by a conductive material provided in the through hole.
【0007】本発明のCR素子は、コンデンサと抵抗体
とが絶縁基板上に並設されたものではなく、絶縁基板を
介してコンデンサと抵抗体とが積層された構造であるた
め、素子面積はコンデンサ又は抵抗体1個分とほぼ等し
いものとなり、実装面積は従来品に比べて約1/2とな
る。The CR element of the present invention has a structure in which the capacitor and the resistor are laminated on the insulating substrate instead of the capacitor and the resistor arranged side by side on the insulating substrate. It is almost equal to one capacitor or one resistor, and the mounting area is about half that of the conventional product.
【0008】本発明において、コンデンサ及び抵抗体は
保護ガラス層で被覆されていることが好ましい。In the present invention, the capacitor and the resistor are preferably covered with a protective glass layer.
【0009】[0009]
【発明の実施の形態】以下に、図面を参照して本発明の
CR素子を詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a CR device according to the present invention will be described in detail with reference to the drawings.
【0010】図1は本発明のCR素子の実施の形態を示
す図であって、(a)図は断面図,(b)図は等価回路
図を示す。なお、図1において、図2に示す部材と同一
機能を奏する部材には同一符号を付してある。FIG. 1 is a view showing an embodiment of a CR element according to the present invention. FIG. 1A is a sectional view, and FIG. 1B is an equivalent circuit diagram. In FIG. 1, members having the same functions as those shown in FIG. 2 are denoted by the same reference numerals.
【0011】このCR素子は、図1(b)に示す如く、
コンデンサCと抵抗Rとが直列に接続されたものであ
り、アルミナ基板1の一方の板面に下部電極3B、誘電
体層3及び上部電極3AよりなるコンデンサCが設けら
れ、他方の板面に下部電極5B、抵抗層5及び上部電極
5Aよりなる抵抗体Rが設けられている。なお、コンデ
ンサC、抵抗体Rはいずれも下部電極3B,5Bがアル
ミナ基板1の板面に接するように設けられている。[0011] As shown in FIG.
A capacitor C and a resistor R are connected in series. A capacitor C composed of a lower electrode 3B, a dielectric layer 3 and an upper electrode 3A is provided on one plate surface of the alumina substrate 1, and is provided on the other plate surface. A resistor R composed of a lower electrode 5B, a resistance layer 5, and an upper electrode 5A is provided. Note that both the capacitor C and the resistor R are provided such that the lower electrodes 3B and 5B are in contact with the plate surface of the alumina substrate 1.
【0012】このアルミナ基板1にはスルーホール1A
が設けられており、コンデンサCの下部電極3Bと抵抗
体Rの下部電極5Aとは、このスルーホール1A内に充
填された導電性材料8により導通されている。The alumina substrate 1 has a through hole 1A.
Is provided, and the lower electrode 3B of the capacitor C and the lower electrode 5A of the resistor R are electrically connected by the conductive material 8 filled in the through hole 1A.
【0013】抵抗体R及びコンデンサCは各々保護ガラ
ス層7A,7Bで被覆されている。The resistor R and the capacitor C are covered with protective glass layers 7A and 7B, respectively.
【0014】アルミナ基板1の両端縁には、コンデンサ
Cの上部電極3Aに導通する端子電極6Aと抵抗体Rの
上部電極5Aに導通する端子電極6Bとが設けられてお
り、これら端子電極6A,6Bを回路に接続することに
より、図1(b)に示すようなCR素子となる。At both ends of the alumina substrate 1, there are provided terminal electrodes 6A which are connected to the upper electrode 3A of the capacitor C and terminal electrodes 6B which are connected to the upper electrode 5A of the resistor R. By connecting 6B to the circuit, a CR element as shown in FIG.
【0015】このようなCR素子を製造するには、ま
ず、レーザー光等により予めスルーホール1Aを形成し
たアルミナ基板1の両面に印刷法によりAg,Pd,P
t,Au,Ag/Pd等の貴金属又はNi,Cu等の卑
金属粉末を含む導電性ペーストを塗布して800〜90
0℃で焼成することにより下部電極3B,5Bを焼き付
ける。この際、導電性ペーストがアルミナ基板1のスル
ーホール1Aに入り込むように印刷し、下部電極3Bと
下部電極5Bとが導電性材料8で導通されるようにす
る。In order to manufacture such a CR element, first, Ag, Pd, P is printed on both surfaces of an alumina substrate 1 in which through holes 1A are previously formed by a laser beam or the like.
A conductive paste containing a noble metal such as t, Au, Ag / Pd, or a base metal powder such as Ni, Cu, etc.
By firing at 0 ° C., the lower electrodes 3B and 5B are baked. At this time, printing is performed so that the conductive paste enters the through holes 1A of the alumina substrate 1 so that the lower electrode 3B and the lower electrode 5B are electrically connected by the conductive material 8.
【0016】次に、誘電体セラミックスのペースト及び
抵抗材料のセラミックスのペーストをそれぞれ下部電極
3A,3B上に印刷して800〜900℃で焼成するこ
とにより誘電体層3及び抵抗層5を形成する。Next, the dielectric layer 3 and the resistance layer 5 are formed by printing a dielectric ceramic paste and a ceramic paste of a resistance material on the lower electrodes 3A and 3B, respectively, and firing at 800 to 900 ° C. .
【0017】その後、上記下部電極3B,5Bの形成方
法と同様にして上部電極3A,5Aを誘電体層3及び抵
抗層5上にそれぞれ印刷して焼き付けた後、保護ガラス
のペーストを印刷して600〜850℃で焼き付けるこ
とにより、保護ガラス層7A,7Bを形成する。Thereafter, the upper electrodes 3A and 5A are printed and baked on the dielectric layer 3 and the resistance layer 5, respectively, in the same manner as the method of forming the lower electrodes 3B and 5B, and then a paste of protective glass is printed. By baking at 600 to 850 ° C., protective glass layers 7A and 7B are formed.
【0018】最後に、上記下部電極3B,5Bの形成方
法と同様にして端子電極6A,6Bを印刷して焼き付
け、その後、Niめっき及びはんだめっきを施してCR
素子を得る。Finally, the terminal electrodes 6A and 6B are printed and baked in the same manner as in the method of forming the lower electrodes 3B and 5B, and then Ni plating and solder plating are performed.
Obtain the element.
【0019】本発明において、絶縁基板としてはアルミ
ナ基板の他、ムライト等のセラミックス基板を用いるこ
とができ、通常の場合、このような絶縁基板の厚さは
0.4〜0.6mm程度とされる。In the present invention, a ceramic substrate such as mullite can be used as an insulating substrate in addition to an alumina substrate. In general, such an insulating substrate has a thickness of about 0.4 to 0.6 mm. You.
【0020】絶縁基板に設けるスルーホールは、導通の
確保及び基板の強度低下防止の面から、直径0.2〜
0.5mm程度であることが好ましい。The through hole provided in the insulating substrate has a diameter of 0.2 to 0.2 from the viewpoint of securing conduction and preventing a reduction in the strength of the substrate.
It is preferably about 0.5 mm.
【0021】上部電極3A,5A及び下部電極3B,5
Bの形成に使用される導電性ペーストは、金属粉末とガ
ラスフリットを含む厚膜印刷用に適した導電性ペースト
が望ましい。The upper electrodes 3A, 5A and the lower electrodes 3B, 5
The conductive paste used for forming B is preferably a conductive paste suitable for thick-film printing including metal powder and glass frit.
【0022】上部電極3A,5A,下部電極3B,5B
は、このような導電性ペーストにより5〜15μm程度
の厚さに形成するのが好ましい。また、誘電体層3の厚
さは20〜50μm、抵抗層5の厚さは5〜15μm、
保護ガラス層7A,7Bの厚さは15〜40μm程度で
あることが好ましい。Upper electrodes 3A, 5A, lower electrodes 3B, 5B
Is preferably formed with such a conductive paste to a thickness of about 5 to 15 μm. Further, the thickness of the dielectric layer 3 is 20 to 50 μm, the thickness of the resistance layer 5 is 5 to 15 μm,
The thickness of the protective glass layers 7A, 7B is preferably about 15 to 40 μm.
【0023】なお、誘電体セラミックス材料、抵抗材
料、保護ガラス材料には特に制限はなく、一般のCR素
子に使用されているものを用いることができる。The dielectric ceramic material, the resistance material, and the protective glass material are not particularly limited, and those used in general CR devices can be used.
【0024】このような本発明のCR素子は、両端の端
子電極層6A,6Bに配線するのみで容易に回路に接続
することができる。このCR素子自体の面積は、コンデ
ンサC又は抵抗体Rの1個分の大きさ程度であり、絶縁
基板上にコンデンサと抵抗体とを並べて配置した従来の
CR素子に比べて約1/2の大きさとすることができ
る。Such a CR device of the present invention can be easily connected to a circuit simply by wiring the terminal electrode layers 6A and 6B at both ends. The area of the CR element itself is about the size of one capacitor C or one resistor R, which is about half that of a conventional CR element in which a capacitor and a resistor are arranged side by side on an insulating substrate. It can be large.
【0025】[0025]
【実施例】以下に実施例を挙げて本発明をより具体的に
説明する。The present invention will be described more specifically with reference to the following examples.
【0026】実施例1 図1に示す本発明のCR素子を作製した。Example 1 A CR device of the present invention shown in FIG. 1 was produced.
【0027】まず、アルミナ基板1にレーザー光で直径
0.3mmのスルーホール1Aを形成した後、両面に導
電性ペースト(デュポン社製「5424」)を印刷して
850℃で10分焼成することにより、下部電極3B,
5Bを形成した。First, a through hole 1A having a diameter of 0.3 mm is formed on the alumina substrate 1 with a laser beam, and then a conductive paste (“5424” manufactured by DuPont) is printed on both sides and baked at 850 ° C. for 10 minutes. As a result, the lower electrode 3B,
5B was formed.
【0028】次に、下記配合の誘電体セラミックスペー
スト(デュポン社製「5530」)と抵抗材料ペースト
(住友金属社製「7541,7512又は7513」)
をそれぞれ印刷して850℃で10分焼成することによ
り誘電体層3及び抵抗層5を形成した。Next, a dielectric ceramic paste (“5530” manufactured by DuPont) and a resistive material paste (“7541, 7512 or 7513” manufactured by Sumitomo Metal) having the following composition
Was printed and baked at 850 ° C. for 10 minutes to form a dielectric layer 3 and a resistance layer 5.
【0029】次に、上記下部電極と同様にして上部電極
3A,5Aを形成した後、保護ガラスペーストを印刷し
て800℃で焼成することにより保護ガラス層7A,7
Bを形成した。Next, after the upper electrodes 3A and 5A are formed in the same manner as the lower electrodes, a protective glass paste is printed and baked at 800 ° C. to form the protective glass layers 7A and 7A.
B was formed.
【0030】最後に、上記下部電極と同様にして端子電
極6A,6Bを形成し、Niめっき及びはんだめっきを
施してCR素子を得た。Finally, terminal electrodes 6A and 6B were formed in the same manner as the lower electrode, and Ni plating and solder plating were performed to obtain a CR element.
【0031】このCR素子の各部の寸法は次の通りであ
る。The dimensions of each part of the CR element are as follows.
【0032】アルミナ基板の大きさ:2.0mm×1.
5mm 上部電極3A,5A及び下部電極3B,5Bの厚さ:1
0μm 誘電体層3の厚さ:30μm 抵抗層5の厚さ:10μm 得られたCR素子は、容量68pF、抵抗値200Ωを
示し、必要とされる実装面積は約1.6mm×2.1m
mであった。Size of alumina substrate: 2.0 mm × 1.
5 mm Thickness of upper electrode 3A, 5A and lower electrode 3B, 5B: 1
0 μm Thickness of the dielectric layer 3: 30 μm Thickness of the resistance layer 5: 10 μm The obtained CR device has a capacitance of 68 pF and a resistance value of 200Ω, and a required mounting area is about 1.6 mm × 2.1 m.
m.
【0033】このCR素子と同等の性能を有するCR素
子を、図2に示す如く、コンデンサと抵抗体とをアルミ
ナ基板上に並設して作製する場合、基板としては3.1
mm×1.5mmのものが必要となり、実装面積は約
3.2mm×1.6mmである。従って、上記本発明に
よるCR素子の場合は、従来品の約60%の実装面積で
すむ。As shown in FIG. 2, when a CR element having the same performance as this CR element is manufactured by arranging a capacitor and a resistor side by side on an alumina substrate, the substrate is 3.1.
mm × 1.5 mm is required, and the mounting area is about 3.2 mm × 1.6 mm. Therefore, in the case of the CR element according to the present invention, the mounting area is about 60% of the conventional product.
【0034】[0034]
【発明の効果】以上詳述した通り、本発明のCR素子に
よれば、素子面積が小さく、従って、小さな実装面積で
足り、回路の小型化が可能なCR素子が提供される。As described in detail above, according to the CR element of the present invention, a CR element having a small element area, a small mounting area is sufficient, and a circuit can be miniaturized is provided.
【図1】本発明のCR素子の実施の形態を示す図であっ
て、(a)図は断面図,(b)図は等価回路図を示す。FIG. 1 is a view showing an embodiment of a CR element of the present invention, wherein FIG. 1 (a) is a sectional view and FIG. 1 (b) is an equivalent circuit diagram.
【図2】従来のCR素子を示す断面図である。FIG. 2 is a cross-sectional view showing a conventional CR element.
1 アルミナ基板 1A スルーホール 3 誘電体層 3A,5A 上部電極 3B,5B 下部電極 5 抵抗層 6A,6B 端子電極 7A,7B 保護ガラス層 8 導電性材料 C コンデンサ R 抵抗体 DESCRIPTION OF SYMBOLS 1 Alumina substrate 1A Through hole 3 Dielectric layer 3A, 5A Upper electrode 3B, 5B Lower electrode 5 Resistance layer 6A, 6B Terminal electrode 7A, 7B Protective glass layer 8 Conductive material C Capacitor R Resistor
Claims (2)
体層及び上部電極よりなるコンデンサと、 該絶縁基板の他方の面に積層形成された下部電極、抵抗
層及び上部電極よりなる抵抗体と、を有するCR素子で
あって、 該絶縁基板にはスルーホールが設けられており、前記コ
ンデンサの下部電極と抵抗体の下部電極とは、該スルー
ホール内に設けられた導電性材料により導通されている
ことを特徴とするCR素子。A capacitor comprising an insulating substrate, a lower electrode laminated on one surface of the insulating substrate, a dielectric layer and an upper electrode; a lower electrode laminated on the other surface of the insulating substrate; A CR element comprising: a resistive element comprising a resistive layer and an upper electrode, wherein the insulating substrate is provided with a through hole, and the lower electrode of the capacitor and the lower electrode of the resister are formed in the through hole. Characterized in that the CR element is electrically connected by the conductive material provided in the CR element.
抗体は保護ガラス層で被覆されていることを特徴とする
CR素子。2. The CR element according to claim 1, wherein the capacitor and the resistor are covered with a protective glass layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4064097A JPH10241995A (en) | 1997-02-25 | 1997-02-25 | Cr element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4064097A JPH10241995A (en) | 1997-02-25 | 1997-02-25 | Cr element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10241995A true JPH10241995A (en) | 1998-09-11 |
Family
ID=12586169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4064097A Withdrawn JPH10241995A (en) | 1997-02-25 | 1997-02-25 | Cr element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10241995A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116026500A (en) * | 2021-10-26 | 2023-04-28 | 鹏鼎控股(深圳)股份有限公司 | Pressure sensing device and manufacturing method thereof |
-
1997
- 1997-02-25 JP JP4064097A patent/JPH10241995A/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116026500A (en) * | 2021-10-26 | 2023-04-28 | 鹏鼎控股(深圳)股份有限公司 | Pressure sensing device and manufacturing method thereof |
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Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20040511 |