JPH10199899A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a BGA-type semiconductor device which is easy to mount semiconductor elements, even if the elements are somewhat thick. SOLUTION: Recessed element mounting parts 13 are formed into a metal base sheet, a circuit board sheet having openings 22 corresponding to the element mounting parts 13 is bonded to the metal base sheet to form a semiconductor element mounting board sheet. This sheet is positioned on a carrier plate and moved in directions X and Y by specified distances, semiconductor elements are wire-bonded, the semiconductor elements 14 and wire-bonded parts are sealed with a resin by a potting mold or an injection mold, and solder balls 19 or bumps are formed on outer connection terminal lands of a lead pattern.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a BGA type (Ball Grid A) capable of improving productivity and mounting reliability.
(Rray) semiconductor device, in particular, a BGA type using a semiconductor element mounting substrate formed by joining a metal substrate sheet having a lead pattern on one surface side of a resin substrate and a semiconductor element mounting region on the other surface side And a method of manufacturing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, when mounting a semiconductor device such as an IC or an LSI, a plurality of outer leads formed in a required shape such as a J-type or a gull-wing type are projected along an outer peripheral edge of the semiconductor device. Connect the leads to the printed circuit board (P
WB) or the like is connected by using solder to a mounting pad of a wiring pattern formed on a mounting substrate. However, this mounting method requires a mounting area of a relatively large area, and has a problem that it cannot cope with miniaturization of the device. Accordingly, in recent years, in response to miniaturization of semiconductor elements, downsizing of semiconductor devices, and cost reduction, devices that use solder balls for a plurality of external connection terminals of a semiconductor device and mount them on a mounting board ( (Referred to as BGA), for example,
No. 456, Japanese Patent Application Laid-Open No. 4-277636, and the like. According to these devices, after positioning and mounting the semiconductor device on a plurality of mounting pads on a mounting board provided corresponding to each of the plurality of solder balls, the semiconductor device is heated and easily melted. Since the solder balls can be reflowed and connected simultaneously on the mounting board,
There is an advantage that mounting of the semiconductor device becomes easy.

The BGA type semiconductor device is manufactured by, for example, the following method. That is, a plurality of unit regions including the element mounting portion are closely aligned in the vertical and horizontal directions on a metal substrate sheet having thermal conductivity, and a metal substrate sheet sheet and a circuit board sheet sheet to be joined thereto are joined in an overlying state. . This circuit board sheet sheet is a predetermined electrically insulating resin base sheet provided with a copper foil layer on one side,
An opening corresponding to the semiconductor element in the center, a lead pattern including a plurality of conductor leads radially arranged along and surrounding the opening, and the conductor leads are exposed in an area array. A plurality of unit regions composed of a solder resist film provided with a plurality of spaces are closely arranged in the vertical and horizontal directions. The semiconductor element mounting substrate sheet thus formed is cut and separated along vertical and horizontal boundaries dividing each unit region, and a large number of individual semiconductor element mounting substrates 60 as shown in FIG. 4 are formed. The semiconductor element mounting substrate 60 is mounted on a carrier or individually supplied and positioned on an assembly line of a semiconductor device, and the semiconductor element 61 is mounted via a conductive adhesive. Next, wire bonding is performed in which one end of each bonding wire 62 is connected to one of the wire bonding pads, and the other end is connected to one of the electrode terminals provided on the semiconductor element 61 to form an electrical conduction circuit. Do. Thereafter, as shown in FIG. 5, potting molding for resin-sealing the semiconductor element 61, the bonding wires 62, and the wire bonding pads with a potting resin 63 is performed. The individual semiconductor devices 67 are manufactured by connecting solder balls 66 in a protruding state on the plurality of external connection terminals 65 exposed in a grid array on the solder resist film 64 formed in advance.

[0004]

However, in the above-described method of manufacturing a semiconductor device according to the prior art, a metal substrate sheet having a plurality of individual unit partition areas and a circuit substrate sheet are integrated. Since the individual semiconductor element mounting substrates 60 are formed by cutting and separating from the thermocompression bonded semiconductor element mounting substrate sheets, handling such as transport and positioning of the individual semiconductor element mounting substrates 60 becomes complicated, and misalignment occurs. In addition, there has been a problem that the quality is reduced due to damage during handling and the operation efficiency of semiconductor element mounting is reduced, and productivity is significantly impaired. Furthermore, expensive mounting equipment is required to position the individual semiconductor element mounting board 60 on the carrier, and there has been a problem of economical increase in the manufacturing cost of the semiconductor device. In addition, since the semiconductor element 61 is mounted on the semiconductor element mounting substrate 60, and furthermore, wire bonding is performed thereon, there is a problem that it is difficult to mount the semiconductor element 61 when the semiconductor element 61 is slightly thick. The present invention has been made in view of such circumstances, and when mounting a semiconductor element or the like, it is possible to improve workability such as transport and positioning, and to easily mount the semiconductor element or the like. Is a BG which can be easily mounted even when the semiconductor element itself is somewhat thick, and can improve the productivity of the semiconductor device.
It is an object to provide a method for manufacturing a semiconductor device in an A-type semiconductor device.

[0005]

According to the present invention, there is provided a semiconductor device comprising:
The method of manufacturing a semiconductor device according to the aspect of the invention includes a semiconductor element mounted in the center, and a lead pattern including a plurality of leads connected to a plurality of electrode pads of the semiconductor element via bonding wires around the semiconductor element, and A method for manufacturing a semiconductor device in which a plurality of solder balls or bumps are provided in each of the leads in a grid array to serve as connection terminals, wherein a required number of the semiconductor devices are arranged in a matrix. A metal substrate sheet having good thermal conductivity is prepared, and a recess is formed in an element mounting portion of each semiconductor device to form a lower portion from the periphery thereof, and a predetermined base plating is performed on the surface thereof. In the first step, an opening corresponding to an element mounting portion of a plurality of semiconductor devices formed on the metal substrate sheet is formed, and around the opening, A second step of preparing a circuit board sheet in which a lead pattern connected to the semiconductor element disposed in the opening is formed by etching, and a metal substrate sheet manufactured in the first step; A third step of joining the prepared circuit board sheets to the respective element mounting portions so that the openings thereof are aligned with each other to form a semiconductor element mounting substrate sheet, and positioning and mounting the semiconductor element mounting substrate sheet on a transport plate. The semiconductor element mounting substrate sheet is transported by a predetermined distance in the X direction and the Y direction, and the semiconductor element is mounted on each element mounting portion, and a predetermined wire bonding is performed to perform terminal bonding of each semiconductor element and the lead. A fourth step of connecting a pattern and a semiconductor device and a wire-bonded portion to each other by a potting mold or A fifth step of resin sealing by injection molding, a sixth step of forming the solder balls or bumps on each external connection terminal land of the lead pattern, and a connection in which the semiconductor devices are juxtaposed vertically and horizontally by the above steps. A seventh step of cutting and separating a single semiconductor device from the semiconductor device. In the method of manufacturing a semiconductor device according to a second aspect, in the method of manufacturing a semiconductor device according to the first aspect, the depression in the first step is performed by a press process. According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device.
In the method of manufacturing a semiconductor device described above, the recess processing in the first step is performed by etching. According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to any one of the first to third aspects.
In the step, a solder resist film is formed on a portion of the circuit board sheet other than the external connection terminal lands. In the above invention, the metal substrate sheet having good thermal conductivity includes a copper alloy substrate in addition to a pure copper substrate.

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising preparing a metal substrate sheet having a size in which a plurality of semiconductor devices are arranged vertically and horizontally, and attaching a circuit board sheet having a predetermined lead pattern formed thereon. To make a semiconductor element mounting substrate,
Since a semiconductor element is mounted thereon, predetermined wire bonding is performed, and resin sealing is performed, a large number of semiconductor devices can be manufactured on one substrate. The element mounting portion on which the semiconductor element is mounted is recessed and formed at a position lower than the periphery thereof. Therefore, it is assumed that a thin semiconductor element can be mounted on the element mounting portion. Can be installed even if. In particular, in the method of manufacturing a semiconductor device according to the second aspect, since the depression is formed by pressing, the depression of a predetermined shape can be performed in a short time, and the depth of the depression can be arbitrarily set. In the method of manufacturing a semiconductor device according to the third aspect, since the dent processing is performed by etching, the processing is simple and does not require a special mold or the like. Limits its depth. In the method of manufacturing a semiconductor device according to the fourth aspect, since a solder resist film is formed on a portion of the circuit board sheet other than the external connection terminal lands, the solder balls can be easily fixed, and furthermore, the leads can be formed. In addition to preventing corrosion of the pattern, it is possible to prevent unnecessary contact with other circuits when the semiconductor device is mounted.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention. Here, FIG. 1 is a partial sectional view of a semiconductor device manufactured by the method of manufacturing a semiconductor device according to the first embodiment of the present invention, FIG. 2 is a plan view of the same, and FIG. 3 is a second embodiment of the present invention. FIG. 14 is a partial cross-sectional view of a semiconductor device manufactured by the method for manufacturing a semiconductor device according to the embodiment.

First, a single semiconductor device 10 manufactured by the method for manufacturing a semiconductor device according to the first embodiment will be described. As shown in FIG.
Is a copper substrate 11 which is an example of a metal substrate having good thermal conductivity.
And a circuit board 12 using a glass cloth epoxy resin plate 12a, which is an example of an insulating resin base material bonded thereon, as an insulating material, and an element mounting formed by performing a recess in the center of the copper substrate 11. Semiconductor element 14 mounted on unit 13
A bonding wire 17 for connecting a terminal portion (electrode pad) of the semiconductor element 14 to an inner end of each lead 16 of the lead pattern 15 on the circuit board 12; and an external connection terminal of an outer end of each lead 16. A solder ball 19 fixed to each land 18 and a potting resin 20 covering the semiconductor element 14 and the bonding wire 17.
And a solder resist film 21 covering the surface of each lead pattern 15.

The device mounting portion 13 is formed into a recess having a thickness of about a plate thickness by a press process, and the semiconductor device 1 to be mounted is mounted.
The height of 4 does not protrude excessively from the surface of the copper substrate 11. The circuit board 12 has an opening 22 corresponding to the element mounting portion 13 so that the semiconductor element 14 is exposed. The external connection terminal lands 18 are formed vertically and horizontally on the outside of the element mounting portion 13 and at a constant pitch, and the solder balls 19 bonded to the external connection terminal lands 18 are arranged in a grid array. I have. The solder resist film 21 covers the surface of the circuit board 12 except for the external connection terminal lands, and helps the solder balls 19 to be fixed at predetermined positions and protects the lead patterns 15 on the surface. I'm trying. Hereinafter, a method of manufacturing the semiconductor device 10 having such a structure will be described.

FIG. 2 shows a connected semiconductor device 2 in which a plurality of (in this example, 20) semiconductor devices 10 are connected vertically and horizontally.
3 is shown, a copper substrate sheet having a thickness of 0.25 to 0.55 mm, which is an example of a metal substrate sheet having the same width as the connection semiconductor device 23, is prepared as shown in FIG. A pressing process, which is an example of a dent process, is performed on a portion of each semiconductor device 10 on which the semiconductor element 14 is mounted, and a plurality of element mounting portions 13 are formed at a predetermined pitch slightly below the surface. Thereafter, predetermined plating (for example, Ni plating) is performed on the copper substrate sheet to form a base plating layer 24. Further, in order to further improve the corrosion resistance or the brazing property, it is free to further apply a plating of gold, silver, palladium or the like on the base plating layer 24 (the above-mentioned first step). ).

A glass cloth epoxy resin base sheet (thickness: 0.3 to 0.5 mm, FR-4 or FR-5) which is an example of an electrically insulating member having the same width as the copper substrate sheet.
Is provided, a copper foil layer having a thickness of about 32 μm is provided on one side thereof, and the other side is an example of a thermosetting adhesive,
A prepreg layer 25 having a thickness of about 50 to 100 μm is provided. In the substrate sheet having such a configuration, first, a plurality of openings 22 corresponding to the respective element mounting portions 13 formed in the copper substrate sheet are formed by press processing. Then, the copper foil layer on the surface is etched by a well-known method to form a lead pattern 15 around each of the openings 22, thereby manufacturing a circuit board sheet (the above is the second step).

The circuit board sheet is thermocompression-bonded to the copper board sheet via a prepreg layer. In this case, the positions of the element mounting portions 13 of the copper board sheet and the openings 22 of the circuit board sheet are matched. Joined in the state. After this,
External connection terminal land 1 by a conventional screen printing method
A solder resist film 21 is formed with 8 exposed. Thereby, the semiconductor element mounting substrate sheet is completed (the above is the third step). Next, the semiconductor element mounting substrate sheet is positioned and mounted on a transport plate (not shown), the transport plate is moved by a predetermined distance in the X direction and the Y direction, and the mounted semiconductor element mounting substrate sheet is moved to a predetermined position. While moving to the position, predetermined semiconductor elements 14 are sequentially mounted on each element mounting portion 13 and predetermined wire bonding is performed. Here, since the device mounting portion 13 is recessed, the position of the terminal pad 26 of each semiconductor device 14 is lowered, and the bonding wire connecting each terminal pad 26 and the inner end of the lead 16 is formed by a circuit. It does not protrude from the surface of the substrate sheet (the above is the fourth step).

After the above steps, a predetermined amount of potting resin 20 is poured into each element mounting portion 13 to perform resin sealing of the semiconductor element 14, the bonding wire 17, and a joint portion thereof (the fifth step). . Next, the solder balls 19 are fixed to the external connection terminal lands 18 which are the outer ends of the leads, and the connection semiconductor device 23 is completed (the above is the sixth step). In use, the semiconductor device 10 is cut and separated by a jig milling machine or another cutter at the vertical and horizontal cutting lines 27 shown in FIG. 2 to manufacture a single semiconductor device 10 (the seventh step). Note that the copper substrate 11 promotes heat dissipation of the semiconductor element 14 and
Has the function of electrically sealing and shutting off external noise.

Next, a semiconductor device 30 manufactured by the method for manufacturing a semiconductor device according to the second embodiment of the present invention shown in FIG. 3 will be described. The same components as those of the semiconductor device 10 manufactured by the manufacturing method are denoted by the same reference numerals, and detailed description thereof will be omitted. As the copper substrate 31 which is an example of the metal substrate used for the semiconductor device 30, a slightly thicker copper substrate 31 is used.
About two-thirds of the dents are formed. by this,
The position of the semiconductor element 14 to be mounted can be lowered, and a thinner semiconductor device 30 as a whole can be provided.

In the method of manufacturing the semiconductor device according to the first embodiment, an etching process is used instead of the depression process performed by the press process in the method of manufacturing the semiconductor device according to the first embodiment.
An element mounting portion 32 is formed, and the other points are the same. In this semiconductor device 30, since a relatively thick copper substrate is used, the heat dissipation is further improved.
Since one side of the semiconductor device 30 is flat, there is an advantage that a thinner device (for example, an IC card) can be provided without being bulky in the thickness direction.

In the above embodiment, the material and the thickness of the metal substrate are specified and described. However, the present invention is applicable to a case where the material is thinner and a case where the thickness is thicker. Further, the connection semiconductor device has been described by specifying the number of semiconductor devices, but the present invention is not limited to that number. Furthermore,
In the above embodiment, the solder balls are fixed to the external connection terminal lands, respectively, but bumps can be formed at these portions. In the above embodiment, each semiconductor device is manufactured by performing potting resin molding. However, each semiconductor device may be manufactured by performing injection resin molding.

[0017]

In the method of manufacturing a semiconductor device according to the first to fourth aspects, a plurality of semiconductor devices are simultaneously manufactured in a connected state, so that mass production with high efficiency and low cost is possible. And
Since the semiconductor element is mounted on the metal substrate with the depression provided, a thinner BGA type semiconductor device can be provided. In particular, in the method of manufacturing a semiconductor device according to claim 2,
Since the depression is formed by pressing, accurate batch processing can be performed in a short time. In the method of manufacturing a semiconductor device according to the third aspect, since the dent processing is performed by etching, the processing is simple, and no special mold or the like is required. Since the side surface of the metal substrate can be held flat, a thinner semiconductor device can be provided. Further, the internal residual stress retained in the metal substrate sheet is reduced, so that the deformation of the metal substrate sheet can be prevented, and the flatness is significantly improved. As a result, the coplanarity of the solder balls or bumps can be improved. In the method of manufacturing a semiconductor device according to the fourth aspect, since a solder resist film is formed on a portion of the circuit board sheet other than the external connection terminal lands,
The solder balls can be easily fixed, and the lead patterns can be protected.

[Brief description of the drawings]

FIG. 1 is a partial cross-sectional view of a semiconductor device manufactured by a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a plan view of a coupled semiconductor device in which the semiconductor devices are connected vertically and horizontally.

FIG. 3 is a partial sectional view of a semiconductor device manufactured by a method for manufacturing a semiconductor device according to a second embodiment of the present invention;

FIG. 4 is an explanatory view illustrating a method for manufacturing a semiconductor device according to a conventional example.

FIG. 5 is an explanatory view showing a method for manufacturing a semiconductor device according to a conventional example.

[Explanation of symbols]

Reference Signs List 10 semiconductor device 11 copper substrate (metal substrate) 12 circuit substrate 12a glass cloth epoxy resin plate 13 element mounting portion 14 semiconductor element 15 lead pattern 16 lead 17 bonding wire 18 external connection terminal land 19 solder ball 20 potting resin 21 solder resist film 22 Opening 23 Connection semiconductor device 24 Base plating layer 25 Prepreg layer 26 Terminal pad 27 Cutout line 30 Semiconductor device 31 Copper substrate (metal substrate) 32 Element mounting portion

Claims (4)

[Claims] 1. A semiconductor element is mounted at a center, and a lead pattern including a plurality of leads connected to a plurality of electrode pads of the semiconductor element via bonding wires is provided around the semiconductor element. Is a method of manufacturing a semiconductor device provided with a plurality of solder balls or bumps arranged in a grid array and serving as connection terminals, wherein a required number of the semiconductor devices have a width capable of being juxtaposed vertically and horizontally and heat. Prepare a metal substrate sheet with good conductivity, perform dent processing of the element mounting part of each semiconductor device,
A first step of forming a predetermined base plating on the surface thereof, and an opening corresponding to an element mounting portion of a plurality of semiconductor devices formed on the metal substrate sheet are formed at a position lower than the periphery thereof; In addition, a second step of preparing a circuit board sheet around the opening, in which a lead pattern connected to a semiconductor element arranged in the opening is formed by an etching process; On the metal substrate sheet, the second
A third step of forming the semiconductor element mounting substrate sheet by joining the circuit board sheets prepared in the process to the respective element mounting portions so that the openings are aligned with each other, and positioning and mounting the semiconductor element mounting substrate sheet on the transport plate; The semiconductor element mounting substrate sheet is transported by a predetermined distance in the X direction and the Y direction, and the semiconductor element is mounted on each element mounting portion, and a predetermined wire bonding is performed to make contact with the terminal pads of each semiconductor element. A fourth step of connecting the lead pattern, a fifth step of resin-sealing each of the semiconductor element and the wire-bonded portion by potting molding or injection molding, and each external connection terminal land of the lead pattern A sixth step of forming the solder balls or bumps on the semiconductor device; A seventh method for cutting and separating a single semiconductor device from connected semiconductor devices in which devices are juxtaposed vertically and horizontally.
And a method of manufacturing a semiconductor device. 2. The method of manufacturing a semiconductor device according to claim 1, wherein said recess processing in the first step is performed by press processing. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the recess processing in the first step is performed by etching. 4. The semiconductor device according to claim 1, wherein, in the second step, a solder resist film is formed on a portion of the circuit board sheet excluding the external connection terminal lands. Production method.