JPH0961843A - Laser annealing method and production of liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the fluctuation in the characteristics of a film to be annealed by the scanning pitch of a laser beam in a laser annealing method. SOLUTION: The pulse laser beam formed by shaping an energy distribution to linear like (a) is used and the scanning pitch P of the pulse laser beam is made smaller than the length of the region where the energy in the short length direction of the pulse laser beam rises, by which the effective energy to be cast over the entire apart of the film to be annealed is made uniform at the energy density regulated in the region where the energy falls. The fluctuation in the characteristics of the film to be annealed by the scanning pitch of the laser beam is suppressed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser annealing method used for forming a thin film transistor and the like and a method for manufacturing a liquid crystal display device.

[0002]

2. Description of the Related Art In recent years, active matrix type liquid crystal display devices using thin film transistors are highly demanded for high definition and low cost. Thin film transistor (hereinafter referred to as "TFT") using polycrystalline silicon as an active layer
Is abbreviated as “T” using conventional amorphous silicon for the active layer.
Since the mobility is higher than that of the FT by two digits or more, the device size can be reduced and high definition can be achieved. In addition, since a driving circuit of a liquid crystal display device can be formed over the same substrate, attention has been paid to a technique capable of realizing cost reduction. In particular, technological development for realizing a polycrystalline silicon TFT in a low temperature range (<500 ° C.) in which an alkali-free glass substrate, which can be easily upsized and is inexpensive, can be used is active.

The laser annealing method has been attracting attention as one of the methods for realizing a good-quality polycrystalline silicon thin film in a low temperature range where a glass substrate can be used. The laser annealing method is A
When using a continuous wave (CW) laser such as an r laser,
Although it can be classified into a case where a pulse laser such as an excimer laser is used, a pulse laser such as an excimer laser is often used from the viewpoint of heat damage to the substrate and throughput.

FIG. 5 is a diagram for explaining a conventional laser annealing method, and FIG. 5 (a) shows an energy distribution of one side W.
A pulsed laser beam shaped into a square of 8 mm square is shown, and FIG. 5B shows an energy distribution when laser annealing is performed. The laser beam emitted from the excimer laser is generated by an optical system such as a beam homogenizer as shown in FIG.
As shown in (a), it is shaped into a laser beam having an energy distribution of 8 mm square. This pulsed laser beam is X
And scan in the Y direction to crystallize the thin film to be annealed.
The scanning pitch during beam scanning is set by the average irradiation number. When a TFT is produced by polycrystallizing an amorphous silicon thin film, the characteristics are stable regardless of the number of shots if the average irradiation number is 10 shots / point or more.

In FIG. 5B, the feed amount (scanning pitch) in the X and Y directions is 2 mm, and the average irradiation number is 16 shots /
It is a figure which shows the energy distribution of laser annealing in the case of point. As shown in FIG. 5B, the energy distribution is typically trapezoidal, and the set energy density E _m (m
J / cm ² ) and an energy falling area. The energy falling region is generated due to aberration of the optical system during beam shaping, positional fluctuation of laser light, and the like, and it is theoretically difficult to remove it. FIG. 5B also shows the crystallized state when the polycrystalline silicon thin film is annealed by using the laser beam having the energy distribution of the above shape. Crystallized region B by annealing region A and the energy falling area is formed periodically at set energy density E _m. The crystalline state of the region B is different from that of the region A, and even if it is subsequently annealed at the set energy density _Em , the crystalline state of the region A is not recovered. Therefore, when such conventional laser annealing is performed, regions B having different characteristics are periodically present, and a TFT using this annealed film is formed.
Thus, when a liquid crystal display device is manufactured, periodical characteristic fluctuation appears as image unevenness.

[0006]

As described above, in a pulse beam whose energy distribution is shaped into a rectangle, there are always regions where the energy distribution is constant and regions where the energy distribution rises or falls. When laser annealing is performed by scanning a pulsed laser beam having such an energy distribution, a region where the energy reaching the film to be annealed is constant and the energy distribution falls (effective reaching energy decreases). Inevitably, there is a region and the characteristics of the film to be annealed fluctuate with the scanning pitch of the laser beam as the period. When a TFT array used in a liquid crystal display device is manufactured using such an annealed film, the TFT characteristics (electron mobility, etc.) vary depending on the scanning pitch of the laser beam. Furthermore, when a liquid crystal display device with a built-in drive circuit is manufactured using such a TFT array,
In the display area, the characteristic variation causes image unevenness, and the driving capability of the drive circuit unit varies, resulting in cycle unevenness appearing in the image, and the display quality is greatly degraded.

A first object of the present invention is to provide a laser annealing method capable of suppressing the characteristic variation due to the scanning pitch of the laser beam on the film to be annealed.
A second object of the present invention is a liquid crystal capable of suppressing the characteristic variation of the semiconductor thin film used for the active layer of the pixel thin film transistor due to the scanning pitch of the laser beam, realizing a TFT array with uniform characteristics, and improving the display quality. A method of manufacturing a display device is provided.

A third object of the present invention is to suppress the characteristic variation of the semiconductor thin film used for the active layer of the driving thin film transistor formed in the periphery of the display area due to the scanning pitch of the laser beam and to improve the characteristic of the driving circuit section. It is an object of the present invention to provide a method for manufacturing a liquid crystal display device that can make the liquid crystal display uniform and improve the display quality.

[0009]

A laser annealing method according to claim 1, wherein the film to be annealed is irradiated with a pulse laser beam having a linear energy distribution, and the energy falling region in the short direction of the pulse laser beam is irradiated. It is characterized in that the scanning pitch of the pulse laser beam is made smaller than the length of.

The laser annealing method according to a second aspect is the laser annealing method according to the first aspect, wherein the scanning pitch of the pulse laser beam is 1/2 or less of the length of the energy falling region in the short direction of the pulse laser beam. I have to. The method for manufacturing a liquid crystal display device according to claim 3, wherein the pixel electrode, the gate wiring, and the source wiring are arranged in a matrix, and the pixel substrate is connected to each pixel electrode, the gate wiring, and the source wiring. A method of manufacturing a liquid crystal display device, comprising: a first substrate and a second substrate which are arranged so as to face each other with a liquid crystal layer interposed therebetween, wherein a semiconductor thin film is formed when annealing a semiconductor thin film forming a pixel thin film transistor. A pulsed laser beam with a linear energy distribution is radiated to the pulse laser beam, and the length of the energy fall region in the short direction of this pulsed laser beam is made smaller than the pixel pitch in the scanning direction of the pulsed laser beam to scan the pulsed laser beam. The pitch is made smaller than the length of the energy falling region in the short direction of the pulse laser beam, and the pulse laser beam is scanned. Characterized by a submultiple of the pixel pitch of the direction.

A method for manufacturing a liquid crystal display device according to a fourth aspect is the method for manufacturing a liquid crystal display device according to the third aspect.
Annealing treatment is performed with the scanning direction of the pulsed laser beam being different from the channel width direction of the pixel thin film transistor. The method of manufacturing a liquid crystal display device according to claim 5, wherein in the method of manufacturing a liquid crystal display device according to claim 4, the scanning direction of the pulsed laser beam intersects with the channel width direction of the pixel thin film transistor at 10 degrees or more and 90 degrees or less. Annealing is performed with an angle.

According to a sixth aspect of the present invention, there is provided a display region in which pixel electrodes, gate wirings and source wirings are arranged in a matrix, and pixel thin film transistors are connected to the respective pixel electrodes, gate wirings and source wirings. When,
A liquid crystal display including a first substrate provided with a drive circuit region having a drive thin film transistor formed around the display region, and a second substrate arranged to face the first substrate with a liquid crystal layer interposed therebetween. A method of manufacturing a device, wherein when a semiconductor thin film forming a driving thin film transistor is annealed, a pulse laser beam with a linear energy distribution is irradiated to the semiconductor thin film, and a scanning pitch of this pulse laser beam is pulsed. It is characterized in that it is smaller than the length of the energy falling region in the short direction of the laser beam, and the scanning direction of the pulsed laser beam is different from the channel width direction of the driving thin film transistor.

A method of manufacturing a liquid crystal display device according to a seventh aspect is the method of manufacturing a liquid crystal display device according to the third, fourth, fifth, or sixth aspect, in which a scanning direction of a pulse laser beam is connected to a pixel thin film transistor. Annealing treatment is performed orthogonal to the wiring or the source wiring. The laser annealing method of the present invention uses a pulsed laser beam having an energy distribution shaped into a linear shape, and makes the scanning pitch of the pulsed laser beam smaller than the length of the energy falling region in the short direction of the pulsed laser beam, The effective energy applied to the entire film to be annealed can be made uniform at the energy density defined by the energy falling region, and the characteristic variation due to the scanning pitch of the laser beam on the film to be annealed can be suppressed. When the feed pitch is made smaller than the energy falling region length (usually 50 to 100 μm) by using a rectangular pulse laser beam such as a square or a rectangle, the average irradiation number increases and the throughput is greatly reduced. However, when a pulsed laser beam whose energy distribution is shaped into a linear shape is used, a decrease in throughput can be prevented by increasing the scanning pitch in the longitudinal direction of the energy distribution.

Further, according to the method of manufacturing a liquid crystal display device of the present invention, when the semiconductor thin film for forming the pixel thin film transistor is annealed, a pulse laser beam having a linear energy distribution is used, and the pulse laser beam The length of the energy falling region in the short direction is made smaller than the pixel pitch in the scanning direction of the pulse laser beam, the scanning pitch of the pulse laser beam is made smaller than the length of the energy falling region in the short direction of the pulse laser beam, and the pulse By setting the pixel pitch in the scanning direction of the laser beam to be a divisor, it is possible to prevent periodic characteristic variations in the beam overlapping region from appearing in the image. Further, by setting the scanning direction of the pulsed laser beam to be different from the channel width direction of the pixel thin film transistor, a beam overlapping region is generated in at least a part of the semiconductor thin film in the pixel thin film transistor, and variations in characteristics of the pixel thin film transistor occur. Can be significantly reduced and the display quality can be improved.

Further, according to the method of manufacturing a liquid crystal display device of the present invention, when the semiconductor thin film forming the driving thin film transistor formed in the periphery of the display region is annealed, a pulse laser beam having a linear energy distribution is formed. The pulse pitch of the pulsed laser beam is made smaller than the length of the energy falling region in the short direction of the pulsed laser beam, and the scanning direction of the pulsed laser beam is set to a direction different from the channel width direction of the driving thin film transistor. A beam overlapping region is generated in at least a part of the semiconductor thin film in the thin film transistor for use in the liquid crystal display device, the variation in characteristics of the thin film transistor for the pixel is significantly reduced, the output unevenness of the drive circuit unit is reduced, and the display quality can be improved.

[0016]

Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] FIG. 1 is a diagram for explaining a laser annealing method according to a first embodiment of the present invention. FIG. 1A shows a laser beam shape in which an energy distribution is shaped linearly. FIG. 1 (b) shows the energy distribution in the AA ′ cross section of FIG. 1 (a).

An XeCl excimer laser having a wavelength of 308 nm is used as a pulse laser light source, and the oscillation frequency is 200H.
z or more. The shape of the final beam of this pulsed laser light is, as shown in FIG.
mm, the short dimension T = 0.5 mm. As shown in FIG. 1B, the beam shape in the AA ′ cross section is trapezoidal, and the energy is applied to both end portions of the region L1 (corresponding to the substantially upper side of the trapezoid) of 90% or more of the set energy density. A trapezoidal lower side region L2 is formed having rising and falling energy regions. The rising and falling regions of the energy density are caused by the aberration of the optical system and the position fluctuation of the laser, and it is difficult to set the ratio L1 / L2 to 0.8 or more, and the ratio L1 / L2 <0.8. Become. A laser beam having such an energy distribution is shown in FIG.
As shown in (b), laser annealing is performed by scanning at a pitch P. At this time, crystallinity of the annealed film, and the boundary of half before and after the set energy density E _m, in order to change the crystallinity different regions A or B shown in FIG. 5, the energy up the scanning pitch P The crystallinity could be made uniform by making the length of the falling region 1/2 or less. The length of the energy falling region is 0.08 mm and the scanning pitch P is 0.03 mm.

That is, by using this laser annealing method, the variation in crystallinity of the film to be annealed due to the difference in irradiation energy history can be greatly reduced. [Second Embodiment] FIG. 2 is a view for explaining a method of manufacturing a liquid crystal display device according to a second embodiment of the present invention, and is a plane layout showing one pixel portion of a TFT array of the liquid crystal display device. It is a figure. In FIG. 2, reference numerals 21 and 22 are source wirings, 23 and 24 are gate wirings, 25 is a pixel electrode, and 26 is a TFT (thin film transistor).

In the liquid crystal display device shown in FIG. 2, the pixel electrode 2
5 are arranged in a matrix, and the size of one pixel is U (=
105 μm) × V (= 210 μm) is shown by a broken line. A pixel electrode 25 for applying a voltage to the liquid crystal is provided in each pixel.
There is, for example, the gate wiring 23 connected to the TFT 26
The pixel electrode 25 is externally switched by the source wiring 21.

In the second embodiment, as in the first embodiment, a pulse laser whose energy distribution is shaped into a linear shape as in the first embodiment is used to form a polycrystalline silicon thin film of the TFT 26 of the TFT array of the liquid crystal display device. Annealing is performed by using a XeCl excimer laser beam. The pulse laser beam has a length of the energy falling region in the short direction smaller than the pixel pitch in the scanning direction of the pulse laser beam, and the scanning pitch of the pulse laser beam is smaller than the length of the energy falling region in the short direction of the pulse laser beam. The pixel pitch is made smaller and is a divisor of the pixel pitch in the scanning direction of the pulse laser beam. Then, by scanning the laser beam in a direction parallel to the gate wirings 23 and 24,
The semiconductor thin film is crystallized to form a polycrystalline silicon thin film.

The pixel pitch in the laser beam scanning direction is 105 μm, and the scanning pitch of the laser beam is a divisor of the pixel pitch. Here, when the scanning pitch of the laser beam is set to, for example, 23 μm, which is not a divisor of the pixel pitch, the characteristic variation regions are formed at a pitch of 23 μm. In this case, the minimum common multiple of the pixel pitch and the scanning pitch is the 2415 μm pitch, that is, the characteristic variation region of the beam overlapping portion coincides with the TFT 26 every 23 pixels, and periodic characteristic variation occurs, resulting in periodic variation of the image and display quality. Deteriorates. On the other hand, in this embodiment, by setting the scanning pitch of the laser beam to be a divisor of the pixel pitch, for example, 21 μm, the characteristic variation caused by the scanning pitch of the laser beam matches the pixel pitch, and all T
Since an overlapping region of laser irradiation is formed on the FT 26,
The periodicity of characteristic variation is reduced, and the uniformity of the TFT array is improved. When a liquid crystal display device was manufactured using this TFT array, the periodic image nonuniformity related to the scanning pitch of the laser beam was eliminated, and the display quality was greatly improved.

[Third Embodiment] FIG. 3 is a diagram for explaining a method of manufacturing a liquid crystal display device according to a third embodiment of the present invention. One pixel portion of a TFT array of the liquid crystal display device is shown in FIG. FIG. In FIG. 3, 21 is a source wiring, 23 is a gate wiring, 25 is a pixel electrode, and 26 is T.
FT (thin film transistor) 27 is a polycrystalline silicon thin film.

In the third embodiment, a pulse laser whose energy distribution is shaped linearly as in the first embodiment is used for forming the polycrystalline silicon thin film 27 of the TFT 26 of the TFT array of the liquid crystal display device. (XeCl excimer laser)
By scanning this pulsed laser beam with a beam, the semiconductor thin film is crystallized and the polycrystalline silicon thin film 27
Is formed.

The pulse laser beam size is as shown in FIG.
180mm in the long direction and 0.5mm in the short direction
And the short direction is parallel to the source wiring 21,
Scanning at m pitch, average irradiation number 23.8shots /
is the point. The pixel pitch is the same as that of FIG.
The energy density on the pixel irradiation surface is 350 mJ / cm ² .

In the third embodiment, the pulse laser beam is scanned in parallel with the source wiring 21, the pixel pitch in the scanning direction is 210 μm, and the scanning pitch (21 μm) of the laser beam is the pixel in the scanning direction. The pitch is a divisor, and as in the second embodiment, the laser irradiation overlapping region is formed in all of the TFTs 26. This TFT
The channel width of 26 is 6 μm. Since this channel width is smaller than the scanning pitch of the laser beam, when the channel width direction of the TFT coincides with the scanning direction of the laser beam, which position of the beam falling region of the laser beam depends on the alignment accuracy of the laser beam. It is highly possible that the semiconductor thin film is irradiated with the laser beam depending on the substrate. This variation in the irradiation position changes the effective irradiation energy history and deteriorates the reproducibility of TFT characteristics. Therefore, in this embodiment, the polycrystalline silicon thin film 27 is arranged at an angle of 45 degrees with respect to the source wiring 21 so that the channel width direction of the TFT 26 has an angle of 45 degrees with respect to the scanning direction of the laser beam. There is.
As a result, the crossing region of the channel region with respect to the laser beam is widened, and the overlapping region of the laser beams due to laser beam alignment deviation or the like is always the polycrystalline silicon thin film 2
It is now possible to alleviate variations in TFT characteristics. When a liquid crystal display device is manufactured using this TFT array, the characteristic variation of each TFT 26 can be greatly reduced, and the display quality is greatly improved.
Note that the effect can be obtained if the scanning direction of the pulsed laser beam and the channel width direction of the TFT 26 have an intersection angle of 10 degrees or more and 90 degrees or less.

[Fourth Embodiment] FIG. 4 is a view for explaining a method of manufacturing a liquid crystal display device according to a fourth embodiment of the present invention, which is a plan layout view of the liquid crystal display device. FIG.
In the figure, 21 and 22 are source wirings, 23 and 24 are gate wirings, 31 is a scanning side driving circuit, 32 is a data side driving circuit, and 33 is a display area.

The fourth embodiment is a liquid crystal display device in which each pixel of the display area 33 has the same structure as that of FIG. 2 or 3, and the scanning side drive circuit 31 and the data side drive circuit 32 are built in. is there. Gate wirings 23 and 24 and source wiring 2
1 and 22 are orthogonal to each other and are respectively driven by the scanning side drive circuit 31 and the data side drive circuit 32. And
Data side drive TFT forming the data side drive circuit 32
Direction of the gate wiring of the source wiring 2 of the display area 33
The scanning side drive circuit 3 is not parallel to the directions of 1 and 22 and
The gate wiring of the scanning side driving TFT forming 1 is formed so as not to be parallel to the direction of the gate wirings 23 and 24 of the display region 33. Specifically, the TFTs forming the scanning side and data side driving circuits 31 and 32 are arranged in the display region 33 in the channel length direction or the channel width direction.
Are arranged so as not to be orthogonal to the directions of the gate wirings 23 and 24 and the source wirings 21 and 22. Then, the laser beam is scanned in a direction orthogonal to the gate wirings 23 and 24 in the display area 33.

By forming the driving TFTs of the scanning side and data side driving circuits 31 and 32 in this manner, the intersection region of the channel region of the driving TFT with respect to the scanning direction of the laser beam is widened, and the alignment of the laser beam is performed. The overlapping area of laser beams due to misalignment etc.
FT is present in the polycrystalline silicon thin film,
The variation in FT characteristics can be greatly reduced, the output unevenness of the scanning side and data side drive circuits 31 and 32 can be reduced, and the display quality is greatly improved.

[0029]

The laser annealing method of the present invention uses a pulsed laser beam whose energy distribution is shaped linearly,
By making the scanning pitch of this pulse laser beam smaller than the length of the energy falling region in the short direction of the pulse laser beam, the effective energy irradiated to the entire film to be annealed has an energy density defined by the energy falling region. It is possible to make uniform, and it is possible to suppress the characteristic variation due to the scanning pitch of the laser beam on the film to be annealed.

Further, according to the method of manufacturing a liquid crystal display device of the present invention, when the semiconductor thin film for forming the pixel thin film transistor is annealed, a pulse laser beam having a linear energy distribution is used, and the pulse laser beam The length of the energy falling region in the short direction is made smaller than the pixel pitch in the scanning direction of the pulse laser beam, the scanning pitch of the pulse laser beam is made smaller than the length of the energy falling region in the short direction of the pulse laser beam, and the pulse By setting the pixel pitch in the scanning direction of the laser beam to be a divisor, it is possible to prevent periodic characteristic variations in the beam overlapping region from appearing in the image. Further, by setting the scanning direction of the pulsed laser beam to be different from the channel width direction of the pixel thin film transistor, a beam overlapping region is generated in at least a part of the semiconductor thin film in the pixel thin film transistor, and variations in characteristics of the pixel thin film transistor occur. Can be significantly reduced and the display quality can be improved.

Further, according to the method of manufacturing a liquid crystal display device of the present invention, when the semiconductor thin film forming the driving thin film transistor formed in the periphery of the display region is annealed, a pulsed laser beam having a linear energy distribution is formed. The pulse pitch of the pulsed laser beam is made smaller than the length of the energy falling region in the short direction of the pulsed laser beam, and the scanning direction of the pulsed laser beam is set to a direction different from the channel width direction of the driving thin film transistor. A beam overlapping region is generated in at least a part of the semiconductor thin film in the thin film transistor for use in the liquid crystal display device, the variation in characteristics of the thin film transistor for the pixel is significantly reduced, the output unevenness of the drive circuit unit is reduced, and the display quality can be improved.

[Brief description of drawings]

FIG. 1 is a diagram for explaining a laser annealing method according to a first embodiment of the present invention.

FIG. 2 is a view for explaining the manufacturing method of the liquid crystal display device according to the second embodiment of the present invention.

FIG. 3 is a drawing for explaining the manufacturing method of the liquid crystal display device according to the third embodiment of the present invention.

FIG. 4 is a drawing for explaining the manufacturing method of the liquid crystal display device according to the fourth embodiment of the present invention.

FIG. 5 is a diagram for explaining a conventional laser annealing method.

[Explanation of symbols]

 21, 22 Source wiring 23, 24 Gate wiring 25 Pixel electrode 26 TFT (thin film transistor) 31 Scan side drive circuit 32 Data side drive circuit

Claims (7)

[Claims] 1. A film to be annealed is irradiated with a pulsed laser beam having a linear energy distribution, and the scanning pitch of the pulsed laser beam is made smaller than the length of the energy falling region in the short direction of the pulsed laser beam. Laser annealing method characterized by. 2. The laser annealing method according to claim 1, wherein the scanning pitch of the pulse laser beam is set to 1/2 or less of the length of the energy falling region in the short direction of the pulse laser beam. 3. A first substrate in which pixel electrodes, gate wirings, and source wirings are arranged in a matrix, and pixel thin film transistors are connected to the respective pixel electrodes, gate wirings, and source wirings, and the first substrate. A method of manufacturing a liquid crystal display device, comprising: a second substrate which is arranged to face each other with a liquid crystal layer interposed therebetween, wherein an energy distribution is linearly applied to the semiconductor thin film when the semiconductor thin film forming the pixel thin film transistor is annealed. Irradiating a pulse laser beam shaped in a shape, the length of the energy falling region in the short direction of the pulse laser beam is made smaller than the pixel pitch in the scanning direction of the pulse laser beam, and the scanning pitch of the pulse laser beam is The length of the energy fall region in the short direction of the pulse laser beam is made smaller, and the pulse laser beam travels. Method of manufacturing a liquid crystal display device which is characterized in that the divisor of the direction of the pixel pitch. 4. The method for manufacturing a liquid crystal display device according to claim 3, wherein the annealing treatment is performed with the scanning direction of the pulsed laser beam being different from the channel width direction of the pixel thin film transistor. 5. The scanning direction of the pulse laser beam is 10 degrees or more and 90 degrees with the channel width direction of the pixel thin film transistor.
The annealing process is performed with a crossing angle of less than or equal to 5 degrees.
A method for manufacturing the liquid crystal display device described. 6. A display area in which pixel electrodes, gate wirings, and source wirings are arranged in a matrix, and pixel thin film transistors are connected to the respective pixel electrodes, gate wirings, and source wirings, and the display area is formed around the display area. A method for manufacturing a liquid crystal display device, comprising: a first substrate provided with a drive circuit region having a drive thin film transistor; and a second substrate arranged to face the first substrate with a liquid crystal layer interposed therebetween. When the semiconductor thin film forming the driving thin film transistor is annealed, the semiconductor thin film is irradiated with a pulse laser beam whose energy distribution is shaped linearly, and the scanning pitch of the pulse laser beam is set in the short direction of the pulse laser beam. Is smaller than the length of the energy falling region, and the scanning direction of the pulse laser beam is set to the driving thin film transistor. Method of manufacturing a liquid crystal display device which is characterized in that a direction different from the channel width direction. 7. The annealing treatment is performed by making the scanning direction of the pulse laser beam orthogonal to the gate wiring or the source wiring connected to the pixel thin film transistor.
Or the method for manufacturing a liquid crystal display device according to item 6.