JPH09294046A - Transversal surface acoustic wave band pass filter - Google Patents
Transversal surface acoustic wave band pass filterInfo
- Publication number
- JPH09294046A JPH09294046A JP10306696A JP10306696A JPH09294046A JP H09294046 A JPH09294046 A JP H09294046A JP 10306696 A JP10306696 A JP 10306696A JP 10306696 A JP10306696 A JP 10306696A JP H09294046 A JPH09294046 A JP H09294046A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- surface acoustic
- acoustic wave
- electrodes
- cross width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、トランスバーサル
型弾性表面波バンドパスフィルタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transversal surface acoustic wave bandpass filter.
【0002】[0002]
【従来の技術】一般に弾性表面波素子は、圧電性基板上
にアルミニウム等の電極材料によりIDT電極(Inter
Digital Transducer:櫛歯状電極)を形成して弾性表面
波を励振する。また、この励振された弾性表面波を利用
して、フィルタ・共振子・信号処理デバイス等の機能性
素子を構成する。2. Description of the Related Art Generally, a surface acoustic wave element has an IDT electrode (Inter electrode) formed on a piezoelectric substrate by using an electrode material such as aluminum.
Digital Transducer: Comb-shaped electrodes are formed to excite surface acoustic waves. Further, by using this excited surface acoustic wave, a functional element such as a filter, a resonator, a signal processing device or the like is configured.
【0003】図6に弾性表面波フィルタの基本構成例を
示す。この形式のフィルタは、一般にトランスバーサル
型フィルタと定義されている。FIG. 6 shows an example of the basic structure of a surface acoustic wave filter. This type of filter is generally defined as a transversal type filter.
【0004】動作原理を簡単に説明する。入力端子より
加えられた電気信号は入力側IDT電極2A,2Bによ
り音響エネルギーになる弾性表面波に変換される。この
変換された弾性表面波は圧電性基板1上を伝搬し、出力
側IDT電極3A,3Bにより電気信号に再変換されて
出力端子より電気信号として取り出される。The operating principle will be briefly described. The electric signal applied from the input terminal is converted into a surface acoustic wave which becomes acoustic energy by the input side IDT electrodes 2A and 2B. The converted surface acoustic wave propagates on the piezoelectric substrate 1, is converted again into an electric signal by the output side IDT electrodes 3A and 3B, and is taken out from the output terminal as an electric signal.
【0005】IDT電極パターンは、一方(又は両方)
のIDT電極3A、3Bの電極の交差幅に重み付けがな
され、通過周波数帯域外の周波数領域の減衰が十分に取
れるようにパターン形成される。One (or both) IDT electrode pattern
The crossing width of the IDT electrodes 3A and 3B is weighted, and patterning is performed so that attenuation in the frequency region outside the pass frequency band can be sufficiently obtained.
【0006】また、入力側IDT電極及び出力側IDT
電極は、電気エネルギーと音響エネルギーの変換に際し
て双方向に音響エネルギーを放出し、基板1の両端に設
ける吸音材4が音響エネルギーを吸収して不要な反射を
無くす。Further, the input side IDT electrode and the output side IDT
The electrodes emit acoustic energy bidirectionally when converting electrical energy and acoustic energy, and the sound absorbing material 4 provided at both ends of the substrate 1 absorbs acoustic energy and eliminates unnecessary reflection.
【0007】[0007]
【発明が解決しようとする課題】バンドパスフィルタに
要求される性能は、主に次の4つがある。The performances required of a bandpass filter are mainly the following four.
【0008】(1)通過周波数域での低挿入損失、低い
群遅延時間リップル、所望の帯域幅が得られること。(1) A low insertion loss in the pass frequency range, a low group delay time ripple, and a desired bandwidth can be obtained.
【0009】(2)通過周波数域外では十分な減衰が得
られること。(2) Sufficient attenuation can be obtained outside the pass frequency range.
【0010】(3)温度変化に対しても中心周波数が安
定など特性が安定であること。(3) The characteristics such that the center frequency is stable even when the temperature changes.
【0011】(4)小型、軽量であること。(4) Small size and light weight.
【0012】上記の4つの性能を同時に満たすのは非常
に難しく、例えば、小型化のためにはIDT電極対数を
少なく、交差幅を小さくすれば良いが、IDT電極対数
を減らすことは周波数帯域幅及び帯域外減衰量に所望の
ものが得られなくなる。また、交差幅を小さくすると、
弾性表面波の回折の影響により、IDT電極の交差幅重
み付けによる帯域外減衰量の増加の効果が得られなくな
り、所望の帯域外減衰量が得られなくなる。It is very difficult to satisfy the above four performances at the same time. For example, for downsizing, the number of IDT electrode pairs should be small and the crossing width should be small. However, reducing the number of IDT electrode pairs is a frequency bandwidth. And the desired amount of out-of-band attenuation cannot be obtained. Also, if the cross width is reduced,
Due to the diffraction of the surface acoustic wave, the effect of increasing the out-of-band attenuation amount due to the weighting of the cross width of the IDT electrodes cannot be obtained, and the desired out-of-band attenuation amount cannot be obtained.
【0013】同様に、温度特性を良くするためには、一
般的には水晶基板が使われるが、水晶基板の電気−機械
結合係数が低いため、挿入損失が大きくなる。Similarly, in order to improve the temperature characteristics, a quartz substrate is generally used. However, since the quartz substrate has a low electromechanical coupling coefficient, the insertion loss becomes large.
【0014】本発明の目的は、低挿入損失で、しかも帯
域外減衰特性に優れたバンドパスフィルタになるトラン
スバーサル型弾性表面波フィルタを提供することにあ
る。An object of the present invention is to provide a transversal type surface acoustic wave filter which is a bandpass filter having a low insertion loss and an excellent out-of-band attenuation characteristic.
【0015】[0015]
【課題を解決するための手段】本発明は、上記の目的を
達成するため、トランスバーサル形弾性表面波バンドパ
スフィルタにおいて、入力側IDT電極と出力側IDT
電極の一方を正規形電極、他方を交差幅重み付け電極と
し、前記交差幅重み付け電極の交差幅W(n)を以下の
関数、 W(n)=W・sin(2nπ/N)(a・cos(n
π/N)+b)/8 W:最大交差幅 n:電極対の中央を0として両端に向かった電極部位 N:電極対数N2が奇数では(N2−1)/2、偶数で
はN2/2 a、b:定数 に従って決定した構造を特徴とする。In order to achieve the above object, the present invention provides a transversal type surface acoustic wave bandpass filter in which an input side IDT electrode and an output side IDT electrode are provided.
One of the electrodes is a normal electrode and the other is a cross width weighting electrode, and the cross width W (n) of the cross width weighting electrode is the following function: W (n) = W · sin (2nπ / N) (a · cos (N
π / N) + b) / 8 W: Maximum crossing width n: Electrode part facing both ends with the center of the electrode pair set to 0 N: (N2-1) / 2 when the number of electrode pairs N2 is odd, N2 / 2 a when the number is even , B: characterized by a structure determined according to a constant.
【0016】また、前記交差重み付け電極は、交差幅W
(n)≧0となる範囲では傾斜型重み付けとする構造と
特徴とする。The cross weighting electrode has a cross width W.
In the range of (n) ≧ 0, it is characterized by a structure of weighting with gradient type.
【0017】また、前記正規形電極の対数を60対〜1
00対とし、交差幅重み付け電極の対数を200〜30
0対とする構造を特徴とする。Further, the number of pairs of the normal type electrodes is 60 to 1
00 pairs, and the number of pairs of cross width weighting electrodes is 200 to 30.
It is characterized by a structure of 0 pairs.
【0018】また、前記正規形電極の交差幅Wは、フィ
ルタの通過帯域の中心周波数での表面弾性波の波長をλ
としたときに、 W=c・λ(40≦c≦60) とした構造を特徴とする。The crossing width W of the normal type electrode is defined by the wavelength λ of the surface acoustic wave at the center frequency of the pass band of the filter.
Is characterized by the following structure: W = c · λ (40 ≦ c ≦ 60).
【0019】[0019]
【発明の実施の形態】図1は、本発明の実施形態を示す
弾性表面波フィルタ構成である。本実施形態では、圧電
性基板1として温度特性を良くする水晶基板を用い、入
力側IDT電極2A、2Bは正規形電極構造とし、出力
側IDT電極3A、3Bは交差幅重み付け電極構造とす
る。逆に、入力側IDT電極2A、2Bを交差重み付け
電極とし、出力側IDT電極3A、3Bを正規形電極と
することでも良い。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a surface acoustic wave filter structure showing an embodiment of the present invention. In the present embodiment, a quartz substrate having good temperature characteristics is used as the piezoelectric substrate 1, the input side IDT electrodes 2A and 2B have a normal type electrode structure, and the output side IDT electrodes 3A and 3B have a cross width weighting electrode structure. Conversely, the input-side IDT electrodes 2A and 2B may be cross-weighting electrodes, and the output-side IDT electrodes 3A and 3B may be normal electrodes.
【0020】ここで、交差幅重み付け電極の電極部位n
の交差幅W(n)は、次の関数に従って決定する。Here, the electrode portion n of the cross width weighting electrode
The intersection width W (n) of is determined according to the following function.
【0021】[0021]
【数1】W(n)=W・sin(2nπ/N)(a・c
os(nπ/N)+b)/8 ここで、Wは最大交差幅、電極Nは交差重み付け電極の
IDT電極対数をN2としたときにN2が奇数の場合に
は、[Formula 1] W (n) = W · sin (2nπ / N) (a · c
os (nπ / N) + b) / 8 where W is the maximum crossing width and electrode N is an odd number when N2 is an odd number when the number of IDT electrode pairs of crossing weighting electrodes is N2.
【0022】[0022]
【数2】N=(N2−1)/2 とし、N2が偶数の場合には、## EQU2 ## N = (N2-1) / 2, and when N2 is an even number,
【0023】[0023]
【数3】N=N2/2 とする。## EQU3 ## Let N = N2 / 2.
【0024】また、nは、IDT電極対数N2が奇数の
ときには交差幅重み付け電極のIDT電極対数を端から
数えてN+1対目、つまり、図2に示すように、IDT
電極対の中央をn=0として両端に向かってn=1、
2、3、…、Nとする。N2が偶数のときは、図3に示
すように、交差重み付け電極のIDT電極対を端から数
えてN対目をn=1として両端に向かってN=1、2、
3、…、Nとする。When the number N2 of IDT electrode pairs is an odd number, n is the N + 1th pair of the number of IDT electrode pairs of the cross width weighting electrodes from the end, that is, as shown in FIG.
With the center of the electrode pair n = 0, n = 1 toward both ends,
2, 3, ..., N. When N2 is an even number, as shown in FIG. 3, the IDT electrode pairs of the cross-weighting electrodes are counted from the ends, the N-th pair is set as n = 1, and N = 1, 2,
3, ..., N.
【0025】定数a,bについては、例えば、a+b=
8、0.8≦a≦5を満たす値とする。Regarding the constants a and b, for example, a + b =
8 and a value satisfying 0.8 ≦ a ≦ 5.
【0026】上記の条件を満たすIDT電極構造になる
バンドパスフィルタによれば、比帯域幅1.0〜1.2%
のフィルタ特性をもち、帯域外減衰量を大きくしたトラ
ンスバーサル形弾性表面波フィルタが実現された。According to the bandpass filter having the IDT electrode structure satisfying the above conditions, the specific bandwidth is 1.0 to 1.2%.
A transversal-type surface acoustic wave filter with the filter characteristics of and a large out-of-band attenuation was realized.
【0027】上記の条件に加えて、重み付けの形状をW
(n)≧0となる範囲(図2及び図3を参照)では傾斜
型重み付けとする構造で好ましい結果が得られた。In addition to the above conditions, the weighting shape is W
In the range of (n) ≧ 0 (see FIG. 2 and FIG. 3), a preferable result was obtained in the structure with the gradient type weighting.
【0028】また、正規形IDT電極と交差重み付けI
DT電極の対数を正規形IDT電極を60対〜100対
とし、交差幅重み付けIDT電極を200〜300対と
する構造で好ましい結果が得られた。Also, the normal IDT electrode and the cross weighting I
Preferable results were obtained with a structure in which the number of pairs of DT electrodes is 60 to 100 pairs of normal type IDT electrodes and 200 to 300 pairs of cross width weighting IDT electrodes.
【0029】さらに、正規形IDT電極の交差幅Wは、
フィルタの通過帯域の中心周波数での表面弾性波の波長
をλとしたときに、Further, the cross width W of the normal type IDT electrode is
When the wavelength of the surface acoustic wave at the center frequency of the pass band of the filter is λ,
【0030】[0030]
【数4】W=c・λ(40≦c≦60) とした構造で好ましい結果が得られた。## EQU4 ## A preferable result was obtained in the structure in which W = c.λ (40≤c≤60).
【0031】本発明に基づいた実験として、バンドパス
フィルタの特性を図4及び図5に示す。図4は、中心周
波数112.32MHZの周波数特性であり、低挿入損失
で帯域外減衰量を十分に大きくした特性が得られた。図
5は、中心周波数付近を拡大した周波数特性と遅延時間
リップルを示す。As an experiment based on the present invention, the characteristics of the bandpass filter are shown in FIGS. FIG. 4 shows the frequency characteristic of the center frequency 112.32 MH Z , and the characteristic that the out-of-band attenuation amount is sufficiently large with low insertion loss was obtained. FIG. 5 shows frequency characteristics and delay time ripples in which the vicinity of the center frequency is enlarged.
【0032】[0032]
【発明の効果】以上のとおり、本発明のトランスバーサ
ル形弾性表面波バンドパスフィルタによれば、適切なI
DT電極交差幅重み付け、さらにはIDT電極対数によ
り、低挿入損失かつ帯域外減衰量を高めたバンドパスフ
ィルタ特性が実現される。As described above, according to the transversal type surface acoustic wave bandpass filter of the present invention, an appropriate I
Bandwidth characteristics of the bandpass filter with low insertion loss and high out-of-band attenuation are realized by weighting the width of the DT electrode intersection and the number of pairs of IDT electrodes.
【0033】また、圧電性基板に水晶基板を用いること
により、温度による周波数特性の変動の少ないバンドパ
スフィルタが実現される。Further, by using a quartz substrate as the piezoelectric substrate, a bandpass filter having a small frequency characteristic variation due to temperature can be realized.
【図1】本発明の実施形態を示すトランスバーサル形弾
性表面波フィルタの構成図。FIG. 1 is a configuration diagram of a transversal surface acoustic wave filter showing an embodiment of the present invention.
【図2】実施形態における対数N2が奇数の場合の交差
幅重み付けIDT部構造。FIG. 2 is a cross width weighted IDT part structure in the case where the logarithm N2 is an odd number in the embodiment.
【図3】実施形態における対数N2が偶数の場合の交差
幅重み付けIDT部構造。FIG. 3 is a cross width weighted IDT part structure in the case where the logarithm N2 is an even number in the embodiment.
【図4】本発明に基づいた実験結果を示すフィルタの周
波数特性図。FIG. 4 is a frequency characteristic diagram of a filter showing an experimental result based on the present invention.
【図5】本発明に基づいた実験結果を示すフィルタの周
波数特性と遅延時間特性図。FIG. 5 is a frequency characteristic and delay time characteristic diagram of a filter showing an experimental result based on the present invention.
【図6】従来のトランスバーサル形弾性表面波フィルタ
の構成図。FIG. 6 is a configuration diagram of a conventional transversal surface acoustic wave filter.
1…圧電性基板 2A、2B…入力側IDT電極 3A、3B…出力側IDT電極 4…吸音板 1 ... Piezoelectric substrate 2A, 2B ... Input side IDT electrode 3A, 3B ... Output side IDT electrode 4 ... Sound absorbing plate
Claims (4)
スフィルタにおいて、 入力側IDT電極と出力側IDT電極の一方を正規形電
極、他方を交差幅重み付け電極とし、 前記交差幅重み付け電極の交差幅W(n)を以下の関
数、 W(n)=W・sin(2nπ/N)(a・cos(n
π/N)+b)/8 W:最大交差幅 n:電極対の中央を0として両端に向かった電極部位 N:電極対数N2が奇数では(N2−1)/2、偶数で
はN2/2 a、b:定数 に従って決定した構造を特徴とするトランスバーサル形
弾性表面波バンドパスフィルタ。1. In a transversal surface acoustic wave bandpass filter, one of an input side IDT electrode and an output side IDT electrode is a normal type electrode and the other is a cross width weighting electrode, and a cross width W ( n) is the following function: W (n) = W · sin (2nπ / N) (a · cos (n
π / N) + b) / 8 W: Maximum crossing width n: Electrode site facing both ends with the center of the electrode pair set to 0 N: (N2-1) / 2 when the number N2 of electrode pairs is odd, N2 / 2 a when the number is even , B: a transversal surface acoustic wave bandpass filter characterized by a structure determined according to a constant.
(n)≧0となる範囲では傾斜型重み付けとする構造と
特徴とする請求項1記載のトランスバーサル形弾性表面
波バンドパスフィルタ。2. The crossing weight electrode has a crossing width W.
2. The transversal surface acoustic wave bandpass filter according to claim 1, wherein the weighting is performed in a tilted manner within a range of (n) ≧ 0.
対とし、交差幅重み付け電極の対数を200〜300対
とする構造を特徴とする請求項1又は2の何れか1に記
載のトランスバーサル形弾性表面波バンドパスフィル
タ。3. The number of pairs of the normal electrodes is 60 to 100.
The transversal surface acoustic wave bandpass filter according to claim 1, wherein the transversal surface acoustic wave bandpass filter has a structure in which the number of pairs of cross width weighting electrodes is 200 to 300.
の通過帯域の中心周波数での表面弾性波の波長をλとし
たときに、 W=c・λ(40≦c≦60) とした構造を特徴とする請求項1乃至3記載の何れか1
に記載のトランスバーサル形弾性表面波バンドパスフィ
ルタ。4. The crossing width W of the normal electrodes is W = c · λ (40 ≦ c ≦ 60), where λ is the wavelength of the surface acoustic wave at the center frequency of the pass band of the filter. The structure according to any one of claims 1 to 3, which is characterized by a structure.
The transversal-type surface acoustic wave bandpass filter described in 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10306696A JPH09294046A (en) | 1996-04-25 | 1996-04-25 | Transversal surface acoustic wave band pass filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10306696A JPH09294046A (en) | 1996-04-25 | 1996-04-25 | Transversal surface acoustic wave band pass filter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH09294046A true JPH09294046A (en) | 1997-11-11 |
Family
ID=14344302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10306696A Pending JPH09294046A (en) | 1996-04-25 | 1996-04-25 | Transversal surface acoustic wave band pass filter |
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Country | Link |
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JP (1) | JPH09294046A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007060108A (en) * | 2005-08-23 | 2007-03-08 | Fujitsu Media Device Kk | Surface acoustic wave device |
JP2013012883A (en) * | 2011-06-29 | 2013-01-17 | Kyocera Corp | Acoustic wave element and acoustic wave device including the same |
JP2017228841A (en) * | 2016-06-20 | 2017-12-28 | 株式会社弾性波デバイスラボ | Surface acoustic wave transducer, surface acoustic wave filter and manufacturing method of surface acoustic wave filter |
-
1996
- 1996-04-25 JP JP10306696A patent/JPH09294046A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007060108A (en) * | 2005-08-23 | 2007-03-08 | Fujitsu Media Device Kk | Surface acoustic wave device |
JP2013012883A (en) * | 2011-06-29 | 2013-01-17 | Kyocera Corp | Acoustic wave element and acoustic wave device including the same |
JP2017228841A (en) * | 2016-06-20 | 2017-12-28 | 株式会社弾性波デバイスラボ | Surface acoustic wave transducer, surface acoustic wave filter and manufacturing method of surface acoustic wave filter |
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