JPH09213927A - Method and equipment for manufacturing minute metallic dot - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method, in which a plurality of minute metallic dots having a diameter of 10nmϕ or less are formed at specified places on a substrate stably with high density. SOLUTION: A substrate surface is cleaned chemically (a preprocess 1), and atoms in a first layer on the substrate surface after cleaning are terminated by at least one kind selected from hydrogen atoms, halogen atoms, chalcogen atoms and detachable functional groups (a preprocess 2). The atoms or the functional groups terminating the atoms in the first layer on the substrate surface are removed extending over the insides of minute regions of 10nmϕ or less (a main process 1), and dangling bonds are formed while metallic atoms are adsorbed selectively to the atoms in the first layer, to which the dangling bonds are formed, as heating the above-mentioned substrate, and the metallic atoms are formed in minute dots (a main process 2).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing fine metal dots on a surface of a substrate and an apparatus for producing fine metal dots.

[0002]

2. Description of the Related Art The technique of constructing a fine structure on the surface of a substrate made of a semiconductor or an insulator is the most important in producing a large scale integrated circuit. In particular, the technology for producing minute metal dots, which has the properties of a quantum box that is expected to be applied to next-generation memories, is essential for realizing circuits based on quantum effect devices that operate at ultra-high speed and low power consumption. Can be said to be the technology.

In order to exhibit the properties as a quantum box, it is necessary to form metal dots having extremely small dimensions, and further, the metal dots have a position on the substrate to be incorporated in a circuit in the future. The size is required to be precisely controlled. The method of forming fine metal dots has been studied in various fields because it can be a key technology in the next-generation semiconductor industry, and fine metal dots have been experimentally produced in the laboratory. However, it was extremely unsuitable for mass production.

That is, in order to produce nanometer-sized fine metal dots on a substrate, except for the case of using a direct means such as aligning metal atoms on the substrate surface with STM to produce metal dots, There is no choice but to use the property of the adsorbent adsorbed on the substrate surface. At present, attempts have been made to fabricate fine metal dots by utilizing the self-organization of adsorbents or the adsorption site selectivity, and examples of the self-organization of adsorbents adsorbed on the substrate surface include, for example,
Technology for forming InGaAs quantum boxes on AlGaAs (Notzel. R. et al, Nature, 36)
9, 131-133 (1994)).
On the other hand, as a method utilizing selective adsorption of adsorbents, a technique of forming a minute triangular pyramid hole on the surface of a semiconductor substrate by etching and selectively depositing adsorbents inside the hole to form a quantum box (Fujitsu Labs, Nikkei Sangyo Shimbun June 5 (1
995)) has been announced.

In the former method utilizing the self-organization of adsorbents, it is possible to change the size and the number of metal dots by changing the temperature and the composition ratio. Cannot be controlled. On the other hand, in the latter method utilizing selective adsorption, although the formation position of the metal dot can be precisely controlled, the wiring is difficult because the metal dot is formed at the deepest part of the hole formed in the substrate. Will be. Moreover, adjacent metal dots are formed at intervals of at least about the diameter of the holes in the plane of the substrate, which makes it difficult to increase the density. Although it is possible to dispose a plurality of metal dots inside the holes in a direction perpendicular to the plane of the substrate, even in this case, a dramatic increase in density cannot be expected as compared with the conventional case.

As described above, it is extremely difficult at present to precisely control the fine metal dots at arbitrary positions on the substrate surface and realize high density. However, when manufacturing a next-generation large-scale integrated circuit including a quantum effect element, a method for manufacturing fine metal dots that enables precise position control and high density is indispensable. It is desirable that the fine metal dots are formed so as to project from the surface of the substrate.

Furthermore, it is considered that the following problems will occur when a circuit including a quantum effect element having a nanometer-sized fine structure is actually manufactured and put into practical use.
In other words, the influence of impurities on the device increases with the miniaturization of the device. Especially when manufacturing a quantum effect device using minute metal dots, a much cleaner environment than the current semiconductor development environment is required. . However, in the process of producing minute metal dots by vapor deposition, it is unavoidable that metal atoms are adsorbed in an undesired area, and the substrate surface is contaminated by the metal atoms adsorbed in this area. When obtaining a few small metal dots in the laboratory, there is no problem in such a state, but when mass-producing a large-scale integrated circuit incorporating the small metal dots, the state remains contaminated. Then, it will lead to deterioration of circuit performance. Although it is possible to easily return the contaminated substrate surface to a clean state by heating the substrate to remove excess adsorbents, the nanometer-sized microstructure has poor structural stability, so the substrate is heated. By doing so, its structure is easily changed.

As described above, although the quantum effect element including the fine metal dots is easily affected by impurities, it is currently possible to remove adsorbents that contaminate the surface without destroying the fine structure of the substrate surface. Is extremely difficult. Therefore, the conventional quantum effect device can be normally operated only at an ultralow temperature due to the instability of the fine structure of the surface. On the other hand, by improving the structural stability of the substrate surface so that the surface structure is maintained even if the substrate is heated to a high temperature in the process of removing impurities, such a quantum effect element can be normally operated at a temperature near room temperature. It becomes possible to operate. Therefore, when the formed fine metal dots are actually used as a quantum effect element, it is required to enhance the structural stability of the substrate surface including the fine metal dots.

[0009]

As described above, the diameter is 1
It is extremely difficult to form a plurality of fine metal dots of 0 nm or less at a desired position on the surface of the substrate by the conventional technology, and the manufacturing method is very complicated and sophisticated.
It is difficult to incorporate multiple metal microdots into a circuit using industry conventional means. In addition, when a hole is formed on the surface of the substrate to form a fine metal dot, the fine metal dot is formed inside the concave portion formed on the substrate,
In addition to the difficulty in wiring, it is expected that it will be extremely difficult to achieve higher density than before.

Moreover, since the fine structure of the surface is extremely unstable, it is very difficult at present to remove impurities attached to the surface of the substrate without changing the surface structure of the substrate. For the same reason, even when the quantum effect element is manufactured, it can be operated only at an extremely low temperature.

Since various problems have not been solved as described above, it is difficult to realize a quantum effect element including a fine metal dot by using a conventional technique, and it is technically easy and high in size of the fine metal dot. There is a need for a new technology for practical use that is suitable for mass production that can be densified.

Therefore, an object of the present invention is to provide a method for stably forming a plurality of fine metal dots having a diameter of 10 nm or less at predetermined positions on a substrate with high density. Another object of the present invention is to provide an apparatus for producing such fine metal dots having a diameter of 10 nm or less at a predetermined position on a substrate.

[0013]

In order to solve the above-mentioned problems, the present invention provides a step of chemically cleaning the surface of a substrate, in which the atoms of the first layer on the surface of the substrate after cleaning are hydrogen atoms and halogen atoms. Terminating with at least one selected from the group consisting of a chalcogen atom, and a removable functional group,
A step of removing atoms or functional groups terminating the first layer atoms on the surface of the substrate over a minute region of 10 nmφ or less to form dangling bonds, and dangling bonds while heating the substrate. Provided is a method for producing fine metal dots, which comprises a step of selectively adsorbing metal atoms to the atoms of the first layer on which the metal atoms have been formed and growing the metal atoms into fine dots.

Further, according to the present invention, the atom of the first surface layer of the substrate surface is terminated by at least one selected from the group consisting of hydrogen atom, halogen atom, chalcogen atom and eliminable functional group. 10 terminal atoms or functional groups
a first region for forming a dangling bond by desorbing over a minute region of nmφ or less, a second region for adsorbing a metal atom to the atom of the surface first layer on which the dangling bond is formed, and the first region. It is characterized by further comprising a transfer unit which connects the first area and the second area and transfers the substrate having the dangling bond formed in the minute area on the surface from the first area to the second area. Provided is an apparatus for manufacturing fine metal dots.

Hereinafter, the present invention will be described in detail. In the method for producing a fine metal dot of the present invention, as the substrate, for example, a group IV element or a group III-V compound semiconductor can be used. Specifically, Si, C, SiC, BC _x N (x ≧
2), GaAs, and sapphire.
The surface of such a substrate can be chemically cleaned by, for example, adsorbing an acid on the surface using dilute sulfuric acid, hydrogen peroxide solution or the like, and then rinsing with pure water.

As the atoms for terminating the first layer atoms on the surface of the substrate after cleaning, for example, hydrogen atoms; fluorine atoms,
Examples thereof include halogen atoms such as chlorine atom; and chalcogen atoms such as oxygen atom and sulfur atom, and the functional group is -C.
H _3, and -OH and the like. These are preferably used in a liquid state from the viewpoint of easy handling,
For example, in the case of terminating with hydrogen atoms, hydrogen fluoride water diluted to 5% or less is used, and the substrate is immersed in the hydrogen fluoride water or washed with the hydrogen fluoride water to remove the surface of the substrate. All atoms in one layer can be terminated with hydrogen atoms. When terminating with -OH, an alkali aqueous solution such as sodium hydroxide aqueous solution is used, and all the atoms of the surface first layer can be terminated in the same manner as in the case of hydrogen fluoride water. Furthermore, when terminating with chlorine atoms and oxygen atoms, it is possible to directly terminate the atoms of the first surface layer by exposing the surface to a gas such as chlorine gas or ozone.

By such a treatment, the dangling bonds of atoms on the substrate surface are terminated with specific atoms or functional groups. After that, the surface of the substrate was washed with pure water, and
It is preferable to heat the substrate to about 00 ° C. to evaporate the pure water.

Next, when the atoms or functional groups terminating the first layer atoms on the substrate surface are removed over a predetermined minute region of 10 nmφ or less, for example, electron beam irradiation,
Ion irradiation, pressure application by STM probe, and STM
At least one method of applying an electric field by a probe can be used. By these methods, the atom or functional group terminating the surface first layer atom is removed, and the dangling bond is reformed. Alternatively, the surface structure is locally destroyed, forming dangling bonds that are not terminated by atoms or functional groups as described above.

Subsequently, while heating the substrate at 250 to 350 ° C., the surface first layer atoms on which the dangling bonds are formed are formed by using a molecular beam epitaxy (MBE), an ion beam sputtering (IBS) device, or the like. , Selectively adsorbs metal atoms such as aluminum, and further 40
By heating to 0 to 500 ° C., metal atoms attached to areas other than a predetermined area on the substrate are diffused and adsorbed on the metal dots.

In the present invention, it goes without saying that metal atoms such as Be, Mg and transition metals can be adsorbed in addition to aluminum. Then, in some cases, the substrate on which the metal dots are formed may be heated to a higher temperature to remove impurities on the substrate surface. At this time,
In the present invention, the atoms on the surface of the substrate are locally terminated by the above-mentioned atoms or functional groups, so that unless the atoms or functional groups are eliminated, the metal on the termination surface of the substrate and the other surfaces is not. Based on the difference in atomic adsorption energies,
Diffusion of the metal atoms forming the metal dots hardly occurs, and the impurities can be removed without impairing the fine structure. The heating temperature here is preferably 900 ° C. or lower, more preferably 600 to 800 ° C., and can be appropriately selected depending on the substrate, the terminal atom, and the like. However, the reason why the preferable heating temperature is specified to be 900 ° C. or lower is that, for example, when the surface first layer atoms of the diamond substrate are terminated by hydrogen atoms, the hydrogen atoms on the hydrogenated diamond surface are desorbed at about 900 ° C. Therefore, when the substrate is heated at a temperature lower than that, the terminated hydrogen atom maintains the bond with the substrate surface atom.

A schematic diagram showing an outline of an example of an apparatus for carrying out the method of the present invention is shown in FIG. As shown in FIG. 1, an apparatus 1 for producing minute metal dots of the present invention comprises an electron beam drawing apparatus 2 corresponding to a first area for forming a dangling bond in a minute area on a substrate surface, and a metal in this area. A molecular beam epitaxy (MBE) device 3 corresponding to a second region for adsorbing atoms is connected by a substrate transfer unit 4 that transfers the substrate from the first region to the second region.

In the electron beam drawing apparatus 2, a substrate in which all the atoms of the surface first layer are terminated with predetermined atoms or functional groups is conveyed with the surface thereof facing downward, and the substrate 5 is surfaced by the electron gun 6. Dangling bonds are formed in the region of 10 nmφ. The substrate is then transferred into the MBE device 3 through the transfer unit 4 with the front side facing down, and the crucible 7
The metal atoms supplied from the substrate are adsorbed to the minute area on the substrate surface where the dangling bond is formed. In the figure, 8 is a load lock device.

Here, in the apparatus for manufacturing fine metal dots shown in FIG. 1, for example, a substrate holding unit 30 is prepared inside the device and a substrate holding device connected to a substrate operating unit 32 outside the device by a magnet 31 is used. The substrate may be transferred between the electron beam drawing apparatus 2 and the molecular beam epitaxy apparatus 3. Specifically, first, the substrate 5 in the electron beam drawing apparatus 2 is held by the substrate holder 33 from the substrate holder 33. Assuming that the inside of the transfer path is in a vacuum state in advance, the door 34 that separates the electron beam drawing apparatus 2 from the transfer path 4 is opened, and the substrate holding device is moved along the rail 35 from the inside of the electron beam drawing apparatus 2 to the transfer path. Guide the substrate 5. Then the door 34
Is closed to evacuate the inside of the transfer path, the door 36 that separates the transfer path from the molecular beam epitaxy apparatus 3 is opened, and the substrate 5 is guided into the molecular beam epitaxy apparatus 3 through the transfer path. After that, the substrate is moved to a predetermined position in the molecular beam epitaxy apparatus 3 by the substrate holding device, and the substrate 5 is held by the substrate holder 37, whereby the transfer is completed.

Further, in the apparatus for producing fine metal dots shown in FIG. 1, since the substrate 5 is processed in the electron beam drawing apparatus 2 and the MBE apparatus 3 both facing downward, the carrying means is simplified. be able to. That is, normally, an electron beam (ion beam) drawing device and an MBE (IB)
S) devices are independent devices, and the orientation of the substrate surface is also determined by each device. In general, the substrate is held in the former device so that it is in the surface-up state, while in the latter device, it is in the downward-surface condition. However, in the case where the surface processing (desorption of terminal atoms) and vapor deposition of the substrate are continuously performed as in the present invention, it is necessary to connect the two devices by the substrate transport path. If the orientation is reversed, the substrate will be turned over inside the substrate transport path, and the transport mechanism will be complicated. On the other hand, in the fine metal dot manufacturing apparatus shown in FIG. 1, since drawing is performed while holding the substrate in the electron beam (ion beam) drawing apparatus downward, it is possible to avoid complication of the transport mechanism.

In the above description, the electron beam drawing apparatus and the MBE apparatus have been described as examples, but the same applies even if they are replaced with an ion beam apparatus and an ion beam sputtering apparatus, respectively.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. Here, a case where a diamond substrate is used as the substrate and the first layer atoms on the (110) surface of the substrate are terminated with hydrogen atoms and then minute aluminum dots having a diameter of 10 nm or less are formed will be described as an example. .

In this case, the fine metal dots can be manufactured according to the flow chart shown in FIG. First, the substrate is washed with dilute sulfuric acid and hydrogen peroxide solution to chemically remove impurities on the substrate surface, and then
This substrate is washed with pure water to completely wash out sulfuric acid and hydrogen peroxide solution.

Next, hydrogen fluoride is diluted to 5% or less to adhere hydrogen fluoride to the entire surface of the substrate, and the substrate surface is washed again with pure water. As a result, hydrogen atoms in the monoatomic layer are adsorbed on the entire surface of the substrate, and at this time, the hydrogen atoms terminate dangling bonds of all carbon atoms on the surface of the substrate. Further, the substrate is heated to 100 ° C. to evaporate the pure water on the surface.

Then, a method such as electron beam irradiation described above is applied to a hydrogen atom in a minute region of 10 nmφ or less at a desired position on the substrate surface. As a result, the hydrogen termination of the surface first layer atoms in the predetermined region is removed, and dangling bonds are reformed. Alternatively, the surface structure of the substrate is locally destroyed to form dangling bonds that are not hydrogen-terminated.

Next, while heating the substrate to 300 ° C., for example, aluminum atoms are selectively adsorbed to the area where the dangling bonds are formed on the surface of the substrate. The state of the surface of the diamond substrate (110) and the adsorption energy of aluminum atoms at this time will be described with reference to FIGS. 3 and 4. FIG. 3 is a schematic diagram showing the states of the first layer atoms and the second layer atoms on the hydrogen-terminated diamond substrate (110) surface, and FIG. 4 is the adsorption of aluminum atoms adsorbed on the diamond substrate (110) surface. It is a graph which shows energy.

As shown in FIG. 3, there is a dangling bond 16 generated by desorption of terminal hydrogen atoms in the surface first layer atoms 10 of the diamond substrate. Further, the supplied aluminum atoms can be divided into aluminum atoms 13 existing on the hydrogen-terminated surface, aluminum atoms 14 bonded to dangling bonds, and aluminum atoms 15 adjacent to the aluminum atoms.

The graph of FIG. 4 shows the adsorption energy of each of these aluminum atoms. The dangling bond is very active, and the aluminum atom 1 bonded to the hollow site 18 where the dangling bond exists
4, the adsorption energy 21 is about 6 eV as shown in FIG.
It is. On the other hand, the adsorption energy 20 of aluminum atoms to the hollow sites 17 on the hydrogen-terminated surface is about 0.4e.
V. Since the difference in adsorption energy is extremely large, when aluminum atoms are vapor-deposited on the surface of the substrate by the molecular beam epitaxy method, the aluminum atoms are adsorbed to the minute regions where the dangling bonds 16 are formed. The aluminum atom adsorption energy 22 on the hollow site 19 adjacent to the adsorption site of the aluminum atom bonded to the dangling bond is about 3 eV, which is about one digit larger than the adsorption energy on the hydrogen-terminated surface. I understand.

That is, when aluminum atoms are vapor-deposited on the substrate surface while heating the substrate to about 300 ° C., the aluminum atoms on the hydrogen-terminated surface having a small binding energy move on the substrate surface to form the dangling bond. The aluminum dots are successively adsorbed on the minute areas, and aluminum dots are formed.

In this way, the aluminum dots are formed in a convex state on the substrate surface. Further, when aluminum dots having a predetermined size are grown with the aluminum atoms bonded to the dangling bonds in the minute regions as nuclei, aluminum atom vapor deposition is stopped and the substrate is set to 4
By raising the temperature to around 00 ° C. and diffusing the metal atoms attached to the areas other than the minute areas on the substrate surface, the metal atoms in these areas can be adsorbed to the metal dots.

Furthermore, when excess metal atoms or contaminants in the atmosphere are still attached as impurities on the hydrogen-terminated substrate, the temperature is raised to about 600 ° C. continuously as described above. It may be removed from the surface of the substrate.

Although the above steps describe the method of manufacturing the fine metal dots, the same method can be used for the case of thin metal wires. Therefore,
It is also possible to manufacture the quantum effect element by simultaneously manufacturing the fine metal dots and the wiring according to the above-mentioned steps.

Further, in the above description, the fine metal dots are formed in a convex state on the substrate surface, but the formed fine metal dots can be embedded in the substrate depending on the combination of the substrate and the termination atom. is there. This makes it possible to further stabilize the fine structure of the substrate surface while avoiding the influence of impurities adhering to the device. Hereinafter, this method will be described.

The embedding of metal dots in the substrate can be achieved by growing a thin film on the underlying diamond surface by a vapor phase growth method using hydrogen atoms as a surfactant. The hydrogen atoms adsorbed on the surface of the substrate always remain adsorbed on the surface of the diamond as surfactants during the vapor phase growth process of the diamond, and help the thin film growth of the diamond. Thus, during the vapor phase growth of diamond, carbon atoms are selectively adsorbed on the hydrogen-terminated substrate surface to grow the diamond in a thin film. Then, by stopping the vapor phase growth of diamond, a diamond substrate in which fine aluminum dots are embedded at desired positions can be obtained.

Here, on the surface of the diamond substrate in which the fine metal dots are embedded in this way, the binding energy between the adsorbent and the atoms on the substrate surface is very large, and the adsorbent is adsorbed on the hydrogen-terminated surface. The binding energy in the case of doing is small. Therefore, it is extremely unlikely that the adsorbent bonded to the dangling bond formed at a desired position moves to an undesired position due to thermal diffusion and is adsorbed there, which is a nanometer-scale microstructure. The surface structure is extremely stable. Moreover, when the fine metal dots are embedded in the substrate, the resistance to impurities is improved as compared with the case where the fine metal dots are formed so as to project on the substrate surface. Therefore, if a minute aluminum dot is formed on a diamond substrate and a circuit using this as a quantum effect element is manufactured, it will be denser and faster than a circuit on a conventional silicon substrate, and at around room temperature. A highly ideal integrated circuit that can operate can be realized.

In the present embodiment, the case where diamond is used as the substrate material, hydrogen atoms are used as the terminal atoms, and fine metal dots are made of aluminum metal atoms has been described as an example. In addition, it is possible to fabricate the fine metal dots according to the completely same procedure for all combinations of substances that agree with the above results.

[0041]

As described in detail above, according to the present invention,
It is possible to stably form a plurality of fine metal dots having a diameter of 10 nm or less at desired positions on the surface of the substrate terminated with specific atoms or functional groups.

In addition, the present invention does not require complicated and advanced surface processing technology as in the prior art, and does not require processing, so that higher density than before can be achieved. Therefore, it can be an extremely effective method for mass-producing a large-scale integrated circuit including a large number of fine metal dots, and its industrial value is enormous.

[Brief description of drawings]

FIG. 1 is a schematic view showing an example of an apparatus for producing fine metal dots according to the present invention.

FIG. 2 is a flow chart showing an example of a method for manufacturing fine metal dots according to the present invention.

FIG. 3 is a schematic view showing the surface of a diamond substrate (110) which is hydrogen-terminated.

FIG. 4 is a graph showing the adsorption energy of aluminum atoms adsorbed on the surface of a diamond substrate (110).

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Micro metal dot manufacturing apparatus 2 ... Electron beam drawing apparatus 3 ... MBE apparatus 4 ... Transfer part 5 ... Substrate 6 ... Electron gun 7 ... Crucible 8 ... Load lock device 10 ... Surface first layer Carbon atom 11 ... Surface second layer Carbon atom 12 ... Terminal hydrogen atom 13 ... Aluminum atom on hydrogen-terminated surface 14 ... Aluminum atom bonded to dangling bond 15 ... Aluminum atom Aluminum atom to the closest hollow site of the adsorption site 16 ... Termination hydrogen atom is desorbed Generated dangling bond 17 ... Hollow site on hydrogen-terminated surface 18 ... Site where dangling bond exists 19 ... Hollow site adjacent to adsorption site of aluminum atom bonded to dangling bond 20 ... Hollow on hydrogen-terminated surface Adsorption energy when aluminum atoms are adsorbed on the site 21 ... Dangling Adsorption energy of aluminum atoms bonded to bonds 22 ... Adsorption energy of aluminum atoms adsorbed to the hollow sites adjacent to aluminum atoms bonded to dangling bonds 30 ... Substrate holding part 31 ... Magnet 32 ... Substrate operating part 33 ... Substrate holder 34 , 36 ... Door 35 ... Rail 37 ... Board holder

Claims (5)

[Claims] 1. A step of chemically cleaning a surface of a substrate, wherein the atoms of the first layer on the surface of the substrate after the cleaning are selected from the group consisting of a hydrogen atom, a halogen atom, a chalcogen atom, and a removable functional group. Terminating at least one of the above, the atom or functional group terminating the first layer atom on the substrate surface is removed over a minute region of 10 nmφ or less to form a dangling bond, and First dangling bond formed while heating the substrate
A method for producing fine metal dots, comprising a step of selectively adsorbing metal atoms to layer atoms and growing the metal atoms into fine dots. 2. The manufacturing method according to claim 1, further comprising the step of heating the substrate to a higher temperature to remove impurities adsorbed on the surface of the substrate after growing the metal atoms into the fine metal dots. 3. The substrate according to claim 1, wherein the substrate is selected from the group consisting of Group IV elements and Group III-V compound semiconductors.
The method for producing a fine metal dot according to. 4. The method according to claim 1, further comprising the step of growing metal atoms into fine metal dots, and then growing a thin film in the range of the fine metal dots on the substrate using the terminal atoms as surfactants. Production method. 5. A terminal atom or a functional group on the surface of the substrate, wherein the atoms of the first surface layer are terminated with at least one selected from the group consisting of a hydrogen atom, a halogen atom, a chalcogen atom, and a removable functional group. A first region for desorbing the group over a minute region of 10 nmφ or less to form a dangling bond, a second region for adsorbing a metal atom to the atom of the surface first layer on which the dangling bond is formed, and The first region and the second region are connected to each other, and the substrate in which the dangling bond is formed in the minute region on the surface is changed from the first region to the second region.
An apparatus for manufacturing fine metal dots, comprising: a transporting section for transporting to a region of.