JPH09190920A - Magnetostatic wave device - Google Patents
Magnetostatic wave deviceInfo
- Publication number
- JPH09190920A JPH09190920A JP8022147A JP2214796A JPH09190920A JP H09190920 A JPH09190920 A JP H09190920A JP 8022147 A JP8022147 A JP 8022147A JP 2214796 A JP2214796 A JP 2214796A JP H09190920 A JPH09190920 A JP H09190920A
- Authority
- JP
- Japan
- Prior art keywords
- crystal film
- substrate
- wave device
- magnetic garnet
- magnetostatic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002223 garnet Substances 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 230000005291 magnetic effect Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 abstract description 22
- 239000000155 melt Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Waveguides (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、静磁波デバイス
に関する。TECHNICAL FIELD The present invention relates to a magnetostatic wave device.
【０００２】[0002]
【従来の技術】従来から、静磁波デバイスの磁性ガーネ
ット単結晶膜の材料としては、Ｙ3 Ｆｅ5 Ｏ12（ＹＩ
Ｇ）単結晶が重要な材料として使用されてきた。特に、
ＹＩＧの最も際だった性質は、極端に強磁性半値幅（Δ
Ｈ）が小さいことである。静磁波デバイスの磁性ガーネ
ット単結晶膜の材料として用いたとき、この性質が入力
信号と出力信号との差を小さくできることにつながって
いる。さらに、ＹＩＧの特徴は、入力信号に対して比較
的小さい電力で飽和現象が現れることである。この性質
を利用したリミッタやノイズフィルタなどの静磁波デバ
イスとして、ＹＩＧ単結晶膜は広く用いられてきた。さ
らに、ＹＩＧ単結晶膜も含めて、Ｆｅ元素を含むガーネ
ット単結晶膜も、同様に静磁波デバイスに用いられてき
た。2. Description of the Related Art Conventionally, as a material for a magnetic garnet single crystal film of a magnetostatic wave device, Y 3 Fe 5 O 12 (YI
G) Single crystals have been used as an important material. Especially,
The most prominent property of YIG is the extreme ferromagnetic half-value width (Δ
H) is small. When used as a material for a magnetic garnet single crystal film of a magnetostatic wave device, this property leads to a reduction in the difference between the input signal and the output signal. Further, the feature of YIG is that the saturation phenomenon appears with relatively low power with respect to the input signal. The YIG single crystal film has been widely used as a magnetostatic wave device such as a limiter or a noise filter utilizing this property. Furthermore, garnet single crystal films containing Fe elements, including YIG single crystal films, have also been used in magnetostatic wave devices.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、ＹＩＧ
の特徴の一つである比較的小さい入力信号で飽和する現
象については、電子機器の低消費電力化に伴って、非常
に小さい入力電力で飽和することが望まれていた。[Problems to be Solved by the Invention] However, YIG
Regarding the phenomenon of saturation with a relatively small input signal, which is one of the characteristics of the above, it has been desired to saturate with a very small input power as the power consumption of electronic devices is reduced.
【０００４】それゆえに、この発明の主たる目的は、非
常に小さい入力電力でも飽和現象が現れ、より高機能の
静磁波デバイスを提供することである。Therefore, a main object of the present invention is to provide a magnetostatic wave device of higher performance, in which a saturation phenomenon appears even with a very small input power.
【０００５】[0005]
【課題を解決するための手段】この発明は、Ｆｅ元素を
含む磁性ガーネット単結晶膜によって構成される静磁波
デバイスにおいて、Ｆｅ元素を含む磁性ガーネット単結
晶膜に、Ｉｎ元素が１０〜３０００ｗｔｐｐｍ添加され
ている、静磁波デバイスである。According to the present invention, in a magnetostatic wave device composed of a magnetic garnet single crystal film containing Fe element, In element is added to the magnetic garnet single crystal film containing Fe element in an amount of 10 to 3000 wtppm. It is a magnetostatic wave device.
【０００６】[0006]
【作用】静磁波デバイスを構成するＹＩＧ単結晶膜を始
めとして、Ｆｅ元素を含む磁性ガーネット単結晶膜にＩ
ｎ元素を１０〜３０００ｗｔｐｐｍ添加することによっ
て、飽和入力電力量を非常に小さくできる。The magnetic garnet single crystal film containing Fe element, including the YIG single crystal film that constitutes the magnetostatic wave device,
By adding the n element in an amount of 10 to 3000 wtppm, the saturated input power amount can be made extremely small.
【０００７】[0007]
【発明の効果】この発明によれば、非常に小さい入力電
力でもＹＩＧの特徴の一つである飽和現象が現れ、静磁
波デバイスの機能を高めることができる。According to the present invention, the saturation phenomenon, which is one of the features of YIG, appears even with a very small input power, and the function of the magnetostatic wave device can be enhanced.
【０００８】この発明の上述の目的，その他の目的，特
徴および利点は、図面を参照して行う以下の発明の実施
の形態および実施例の詳細な説明から一層明らかとなろ
う。The above-mentioned objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of the embodiments and examples of the invention with reference to the drawings.
【０００９】[0009]
【発明の実施の形態】図１はこの発明の実施の形態の一
例を示す斜視図である。静磁波デバイス１０は、直方体
状の基板１２を含む。この基板１２は、Ｇｄ3 Ｇａ5 Ｏ
12基板である。基板１２の一方主面には、直方体状の磁
性ガーネット単結晶膜１４が形成される。この磁性ガー
ネット単結晶膜１４は、Ｆｅ元素を含む磁性ガーネット
単結晶膜である。磁性ガーネット単結晶膜１４における
基板１２と反対側の主面には、入力端子１６および出力
端子１８が互いに平行に形成される。また、入力端子１
６および出力端子１８は、それぞれ、その一端がアース
されている。FIG. 1 is a perspective view showing an example of an embodiment of the present invention. The magnetostatic wave device 10 includes a rectangular parallelepiped substrate 12. This substrate 12 is made of Gd 3 Ga 5 O
12 boards. A rectangular parallelepiped magnetic garnet single crystal film 14 is formed on one main surface of the substrate 12. The magnetic garnet single crystal film 14 is a magnetic garnet single crystal film containing Fe element. An input terminal 16 and an output terminal 18 are formed in parallel with each other on the main surface of the magnetic garnet single crystal film 14 opposite to the substrate 12. Also, input terminal 1
One end of each of 6 and the output terminal 18 is grounded.
【００１０】なお、Ｆｅ元素を含む磁性ガーネット単結
晶膜１４の磁性ガーネット単結晶には、（Ｙ
3-x1-x2 Ｒ′x1Ｒ″x2）（Ｆｅ5-y1-y2 Ｍ′y1Ｍ″y2）
Ｏ12において、０≦ｘ１≦３，０≦ｘ２≦３，０≦ｘ１
＋ｘ２≦３，０≦ｙ１＜５，０≦ｙ２≦３，０≦ｙ１＋
ｙ２＜５，ｘ２＝ｙ２で、Ｒ′がＳｃ，Ｌａ系列，Ｂｉ
のうちの１つ以上で、Ｒ″がＭｇ，Ｃａ，Ｓｒ，Ｂａの
うち１つ以上で、Ｍ′がＡｌ，Ｇａ，Ｉｎのうち１つ以
上で、Ｍ″がＳｉ，Ｔｉ，Ｚｒ，Ｈｆ，Ｇｅのうち１つ
以上であるものがある。The magnetic garnet single crystal of the magnetic garnet single crystal film 14 containing Fe element has (Y
3-x1-x2 R'x1 R " x2 ) (Fe 5-y1-y2 M'y1 M" y2 )
In O 12 , 0 ≦ x1 ≦ 3, 0 ≦ x2 ≦ 3, 0 ≦ x1
+ X2 ≦ 3,0 ≦ y1 <5,0 ≦ y2 ≦ 3,0 ≦ y1 +
y2 <5, x2 = y2, R'is Sc, La series, Bi
R'is one or more of Mg, Ca, Sr, Ba, M'is one or more of Al, Ga, In, and M "is Si, Ti, Zr, Hf. , Ge is one or more.
【００１１】[0011]
（実施例１）Ｇｄ3 Ｇａ5 Ｏ12基板をＬＰＥ法でガーネ
ット膜を形成するための基板とした。次に、ガーネット
膜の原料であるＦｅ2 Ｏ3 およびＹ2 Ｏ3 と添加物であ
るＩｎＯ2 と溶剤であるＰｂＯとＢ2 Ｏ3 とを混合し、
縦型電気炉内に保持された白金坩堝に充填し、約１２０
０℃で均質化を行い融液化した。この融液を約９００℃
前後の一定温度に保持して、ガーネットを過飽和状態に
した後、この融液中にＧＧＧ基板を浸透し、回転させな
がら所定時間成長を行った。その後、この基板を融液か
ら引き上げ、高速度で回転させてガーネット膜上の付着
融液を遠心力により振り切ることによってガーネット層
を形成した。また、別に上記の条件でＩｎを添加せずに
ガーネット膜を育成し、比較のための試料とした。Example 1 A Gd 3 Ga 5 O 12 substrate was used as a substrate for forming a garnet film by the LPE method. Then, by mixing the PbO and B 2 O 3 is InO 2 and the solvent is additive and Fe 2 O 3 and Y 2 O 3 as a raw material for the garnet film,
The platinum crucible held in the vertical electric furnace was filled with about 120
Homogenization was performed at 0 ° C. to form a melt. This melt is about 900 ℃
After holding the garnet in a supersaturated state while maintaining a constant temperature before and after, the GGG substrate was permeated into this melt and grown for a predetermined time while rotating. Then, this substrate was pulled up from the melt and rotated at a high speed to shake off the adhered melt on the garnet film by centrifugal force to form a garnet layer. A garnet film was separately grown under the above conditions without adding In, and used as a sample for comparison.
【００１２】得られたガーネット膜を用いて、図１に示
す静磁波デバイスを作製し測定周波数２ＧＨｚで飽和現
象が現れるまでの入力電力量を測定した。さらに、ガー
ネット膜を化学分析してＩｎの濃度を測定した。その結
果を表１に示す。なお、表１中、＊を付したものは、こ
の発明の範囲外のものであり、他のものはこの発明の範
囲内のものである。A magnetostatic wave device shown in FIG. 1 was produced using the obtained garnet film, and the input electric energy until the saturation phenomenon appeared at a measurement frequency of 2 GHz was measured. Further, the garnet film was chemically analyzed to measure the In concentration. Table 1 shows the results. In Table 1, those marked with * are outside the scope of the present invention, and others are within the scope of the present invention.
【００１３】[0013]
【表１】 [Table 1]
【００１４】この発明において、Ｉｎの濃度を限定した
のは以下の理由である。すなわち、試料番号２のよう
に、Ｉｎの濃度が１０ｗｔｐｐｍ未満では、試料番号１
のＩｎを添加していないＹＩＧ膜に比べてほとんど飽和
入力電力に変化が生じない。また、試料番号８のよう
に、Ｉｎの濃度が３０００ｗｔｐｐｍを越えると、良質
の単結晶膜が得られなくなる。The reason for limiting the concentration of In in the present invention is as follows. That is, when the concentration of In is less than 10 wtppm as in sample number 2, sample number 1
As compared with the YIG film in which In is not added, the saturation input power hardly changes. Further, if the concentration of In exceeds 3000 wtppm as in sample No. 8, a good quality single crystal film cannot be obtained.
【００１５】（実施例２）Ｇｄ3 Ｇａ5 Ｏ12基板をＬＰ
Ｅ法でガーネット膜を形成するための基板とした。次
に、ガーネット膜の原料であるＦｅ2 Ｏ3 とＹ2 Ｏ3 と
Ｇａ2 Ｏ3 およびＬａ2 Ｏ3 と添加物であるＩｎＯ2 と
溶剤であるＰｂＯとＢ2 Ｏ3 とを混合し、縦型電気炉内
に保持された白金坩堝に充填し、約１２００℃で均質化
を行ない融液化した。この融液を約９００℃前後の一定
温度に保持してガーネットを過飽和状態にした後、この
融液中にＧＧＧ基板を浸透し、回転させながら所定時間
成長を行った。その後、この基板を融液から引き上げ、
高速度で回転させてガーネット膜上の付着融液を遠心力
により振り切ることによってガーネット膜を形成した。
また、別に上記の条件でＩｎを添加せずにガーネット膜
を育成し、比較のための試料とした。(Embodiment 2) LP is applied to the Gd 3 Ga 5 O 12 substrate.
The substrate was used for forming a garnet film by the E method. Then mixed Fe 2 O 3 and Y 2 O 3 and Ga 2 O 3 and La 2 O 3 and PbO and B 2 O 3 is InO 2 and the solvent is additive as a raw material of the garnet film, It was filled in a platinum crucible held in a vertical electric furnace and homogenized at about 1200 ° C. to be melted. After holding this melt at a constant temperature of about 900 ° C. to make the garnet supersaturated, the GGG substrate was permeated into this melt and grown for a predetermined time while rotating. After that, pull up this substrate from the melt,
A garnet film was formed by rotating at a high speed and shaking off the deposited melt on the garnet film by centrifugal force.
A garnet film was separately grown under the above conditions without adding In, and used as a sample for comparison.
【００１６】得られたガーネット膜を用いて、図１に示
す静磁波デバイスを作製し測定周波数２ＧＨｚで飽和現
象が現れるまでの入力電力量を測定した。また、ガーネ
ット膜を化学分析してＩｎの濃度および組成比を測定し
た。その結果を表２に示す。なお、表２中、＊を付した
ものは、この発明の範囲外のものであり、他のものはこ
の発明の範囲内のものである。Using the obtained garnet film, the magnetostatic wave device shown in FIG. 1 was manufactured and the input electric energy until the saturation phenomenon appeared at the measurement frequency of 2 GHz was measured. In addition, the garnet film was chemically analyzed to measure the In concentration and composition ratio. Table 2 shows the results. In Table 2, those marked with * are outside the scope of the present invention, and others are within the scope of the present invention.
【００１７】[0017]
【表２】 [Table 2]
【００１８】この発明において、Ｉｎの濃度を限定した
のは以下の理由である。すなわち、試料番号１０のよう
に、Ｉｎの濃度が１０ｗｔｐｐｍ未満では、試料番号９
のＩｎを添加していないガーネット膜に比べてほとんど
飽和入力電力に変化が生じない。また、試料番号１６の
ように、Ｉｎの濃度が３０００ｗｔｐｐｍを越えると、
良質の単結晶膜が得られなくなる。The reason for limiting the concentration of In in the present invention is as follows. That is, when the concentration of In is less than 10 wtppm as in sample number 10, sample number 9
In comparison with the garnet film to which In is not added, the saturation input power hardly changes. When the concentration of In exceeds 3000 wtppm as in sample No. 16,
A good quality single crystal film cannot be obtained.
【００１９】（実施例３）Ｇｄ3 Ｇａ5 Ｏ12基板をＬＰ
Ｅ法でガーネット膜を形成するための基板とした。次
に、ガーネット膜の原料であるＦｅ2 Ｏ3 とＹ2 Ｏ3 と
Ｇａ2 Ｏ3 およびＢｉ2 Ｏ3 と添加物であるＩｎＯ2 と
溶剤であるＰｂＯとＢ2 Ｏ3 とを混合し、縦型電気炉内
に保持された白金坩堝に充填し、約１２００℃で均質化
を行い融液化した。この融液を約９００℃前後の一定温
度に保持してガーネットを過飽和状態いにした後、この
融液中にＧＧＧ基板を浸透し、回転させながら所定時間
成長を行った。その後、この基板を融液から引き上げ、
高速度で回転させてガーネット膜上の付着融液を遠心力
により振り切ることによってガーネット膜を形成した。
また、別に上記の条件でＩｎを添加せずにガーネット膜
を育成し、比較のための試料とした。(Embodiment 3) Gd 3 Ga 5 O 12 substrate is LP
The substrate was used for forming a garnet film by the E method. Then mixed Fe 2 O 3 and Y 2 O 3 and Ga 2 O 3 and Bi 2 O 3 and PbO and B 2 O 3 is InO 2 and the solvent is additive as a raw material of the garnet film, It was filled in a platinum crucible held in a vertical electric furnace and homogenized at about 1200 ° C. to melt it. After holding this melt at a constant temperature of about 900 ° C. to make the garnet supersaturated, a GGG substrate was permeated into this melt and allowed to grow for a predetermined time while rotating. After that, pull up this substrate from the melt,
A garnet film was formed by rotating at a high speed and shaking off the deposited melt on the garnet film by centrifugal force.
A garnet film was separately grown under the above conditions without adding In, and used as a sample for comparison.
【００２０】得られたガーネット膜を用いて、図１に示
す静磁波デバイスを作製し測定周波数２ＧＨｚで飽和現
象が現れるまでの入力電力量を測定した。また、ガーネ
ット膜を化学分析してＩｎの濃度および組成比を測定し
た。その結果を表３に示す。なお、表３中、＊を付した
ものは、この発明の範囲外のものであり、他のものはこ
の発明の範囲内のものである。Using the obtained garnet film, the magnetostatic wave device shown in FIG. 1 was produced and the input electric energy until the saturation phenomenon appeared at the measurement frequency of 2 GHz was measured. In addition, the garnet film was chemically analyzed to measure the In concentration and composition ratio. Table 3 shows the results. In Table 3, those marked with * are outside the scope of the present invention, and others are within the scope of the present invention.
【００２１】[0021]
【表３】 [Table 3]
【００２２】この発明において、Ｉｎの濃度を限定した
のは以下の理由である。すなわち、試料番号１８のよう
に、Ｉｎの濃度が１０ｗｔｐｐｍ未満では、試料番号１
７のＩｎを添加していないガーネット膜に比べてほとん
ど飽和入力電力に変化が生じない。また、試料番号２４
のように、Ｉｎの濃度が３０００ｗｔｐｐｍを越える
と、良質の単結晶膜が得られなくなる。The reason for limiting the concentration of In in the present invention is as follows. That is, when the In concentration is less than 10 wtppm as in the sample number 18, the sample number 1
Compared to the garnet film in which In is not added, the saturation input power hardly changes. Also, sample number 24
As described above, if the In concentration exceeds 3000 wtppm, a good quality single crystal film cannot be obtained.
【図面の簡単な説明】[Brief description of the drawings]
【図１】この発明の実施の形態の一例を示す斜視図であ
る。FIG. 1 is a perspective view showing an example of an embodiment of the present invention.
１０ 静磁波デバイス １２ 基板 １４ 磁性ガーネット単結晶膜 １６ 入力端子 １８ 出力端子 10 Magnetostatic Wave Device 12 Substrate 14 Magnetic Garnet Single Crystal Film 16 Input Terminal 18 Output Terminal
Claims (1)
によって構成される静磁波デバイスにおいて、 前記Ｆｅ元素を含む磁性ガーネット単結晶膜に、Ｉｎ元
素が１０〜３０００ｗｔｐｐｍ添加されていることを特
徴とする、静磁波デバイス。1. A magnetostatic wave device comprising a magnetic garnet single crystal film containing Fe element, wherein In element is added to the magnetic garnet single crystal film containing Fe element in an amount of 10 to 3000 wtppm. , Magnetostatic wave device.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8022147A JP2998628B2 (en) | 1996-01-11 | 1996-01-11 | Magnetostatic wave device |
| KR1019970000378A KR100208882B1 (en) | 1996-01-11 | 1997-01-09 | Sperm wave device |
| US08/781,701 US5801604A (en) | 1996-01-11 | 1997-01-10 | Magnetostatic wave device with indium/tin in the magnetic garnet |
| EP97100362A EP0784380B1 (en) | 1996-01-11 | 1997-01-10 | Magnetostatic wave device |
| DE69704962T DE69704962T2 (en) | 1996-01-11 | 1997-01-10 | Magnetostatic wave arrangement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8022147A JP2998628B2 (en) | 1996-01-11 | 1996-01-11 | Magnetostatic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09190920A true JPH09190920A (en) | 1997-07-22 |
| JP2998628B2 JP2998628B2 (en) | 2000-01-11 |
Family
ID=12074759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8022147A Expired - Fee Related JP2998628B2 (en) | 1996-01-11 | 1996-01-11 | Magnetostatic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2998628B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010180071A (en) * | 2009-02-03 | 2010-08-19 | Fdk Corp | Magnetic garnet single crystal |
-
1996
- 1996-01-11 JP JP8022147A patent/JP2998628B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010180071A (en) * | 2009-02-03 | 2010-08-19 | Fdk Corp | Magnetic garnet single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2998628B2 (en) | 2000-01-11 |
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| LAPS | Cancellation because of no payment of annual fees |