JPH09111444A - Production of indium oxide-zinc oxide based sintered body target - Google Patents
Production of indium oxide-zinc oxide based sintered body targetInfo
- Publication number
- JPH09111444A JPH09111444A JP7265317A JP26531795A JPH09111444A JP H09111444 A JPH09111444 A JP H09111444A JP 7265317 A JP7265317 A JP 7265317A JP 26531795 A JP26531795 A JP 26531795A JP H09111444 A JPH09111444 A JP H09111444A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- sintered body
- indium oxide
- target
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、透明導電膜形成用
材料として用いられる酸化インジウム−酸化亜鉛系焼結
体ターゲットの製造方法に関する。TECHNICAL FIELD The present invention relates to a method for producing an indium oxide-zinc oxide based sintered body target used as a material for forming a transparent conductive film.
【0002】[0002]
【従来の技術】現在、液相ディスプレイ装置(LCD)
を始めとする表示ディバイスには透明導電膜材料として
酸化インジウム−酸化錫(ITO)が広く用いられてい
る。ITO透明導電膜は、通常ITO焼結体ターゲット
を用いてスパッタ法で作製されている。このITO膜
は、低抵抗で透明性に優れ、エッチング性が良いなど優
れた材料であるが、耐湿性が低いという問題を有してい
た。2. Description of the Related Art Liquid phase display devices (LCDs) are currently in use.
Indium oxide-tin oxide (ITO) is widely used as a transparent conductive film material for display devices such as. The ITO transparent conductive film is usually produced by a sputtering method using an ITO sintered body target. This ITO film is an excellent material such as low resistance, excellent transparency, and good etching property, but it has a problem of low moisture resistance.
【0003】この耐湿性を改善し、かつITOと同等の
導電性と透明性を有する材料として酸化インジウム−酸
化亜鉛系の材料の焼結体ターゲットおよびその製造方法
が特開平6−234565号公報に提案されている。こ
の特開平6−234565号公報に開示されている焼結
体の製造方法は比較的小さい物品を対象としているが、
実際の工業生産で用いられる焼結体ターゲットの大きさ
はこれよりはるかに大きい。このような従来の製造方法
で大型サイズ、例えば5インチ×15インチ以上の焼結
体を作製した場合、十分に高密度な焼結体(相対密度
95%以上)が得られない、焼結体の周辺部と中央部
で色むらが発生する、などの問題が残されている。特に
色むらのあるターゲットをスパッタに用いると、得られ
る膜の抵抗値にばらつきが生じるため、実際には焼結体
の外側部分を研削して色むら部分を取り除いてからター
ゲットとして使用しているのが現状である。Japanese Patent Laid-Open No. 6-234565 discloses a sintered body target made of an indium oxide-zinc oxide based material as a material having improved moisture resistance and having conductivity and transparency equivalent to that of ITO. Proposed. Although the method for producing a sintered body disclosed in Japanese Patent Laid-Open No. 6-234565 targets relatively small articles,
The size of the sintered compact target used in actual industrial production is much larger than this. When a large-sized sintered body having a size of, for example, 5 inches × 15 inches or more is produced by such a conventional manufacturing method, a sufficiently high-density sintered body (relative density of 95% or more) cannot be obtained. There are still problems such as uneven color in the peripheral part and the central part. In particular, when a target with uneven color is used for sputtering, the resistance value of the obtained film varies, so in practice, the outer part of the sintered body is ground to remove the uneven color before use as a target. is the current situation.
【0004】[0004]
【発明が解決しようとする課題】本発明は、大型サイズ
の焼結体を作製した場合でも相対密度90%以上の高密
度のものが得られ、かつ焼結体の周辺部と中央部の色む
らの発生を抑制した酸化インジウム−酸化亜鉛系焼結体
ターゲットの製造方法を提供することを目的としてい
る。According to the present invention, even when a large-sized sintered body is produced, a high density having a relative density of 90% or more can be obtained, and the color of the peripheral portion and the central portion of the sintered body is high. It is an object of the present invention to provide a method for manufacturing an indium oxide-zinc oxide based sintered compact target in which unevenness is suppressed.
【0005】[0005]
【課題を解決するための手段】本発明は、下記の事項を
その特徴としている。 酸化亜鉛粉末を400℃〜800℃で仮焼し、この
仮焼した酸化亜鉛粉末と酸化インジウム粉末とを混合
し、次いでこの混合粉末をプレス成形後1200℃〜1
400℃で焼結する酸化インジウム−酸化亜鉛系焼結体
ターゲットの製造方法。 仮焼後の酸化亜鉛粉末のBET表面積が0.2〜
4.0m2 /gである前記に記載のターゲットの製造
方法。 焼結工程において焼結温度にまで昇温する速度を3
50℃/時以上とする前記およびに記載のターゲッ
トの製造方法。 焼結体の組成が酸化インジウム50重量%以上であ
る前記〜に記載のターゲットの製造方法。The present invention is characterized by the following items. The zinc oxide powder is calcined at 400 ° C. to 800 ° C., the calcined zinc oxide powder and the indium oxide powder are mixed, and the mixed powder is press-molded at 1200 ° C. to 1 ° C.
A method for manufacturing an indium oxide-zinc oxide based sintered body target, which is sintered at 400 ° C. The BET surface area of the zinc oxide powder after calcination is 0.2 to
The method for producing a target as described above, wherein the target is 4.0 m 2 / g. The rate of raising the temperature to the sintering temperature in the sintering process is 3
The method for producing a target according to 1) or 2) above 50 ° C./hour or more. The method for producing a target according to 1 to 3, wherein the composition of the sintered body is 50% by weight or more of indium oxide.
【0006】[0006]
【発明の実施の態様】以下に、本発明の製造方法を詳細
に説明する。まず、原料である酸化亜鉛(ZnO)と酸
化インジウム(In2O3)の粉末を混合するに先立っ
て、酸化亜鉛粉末のみを仮焼する。酸化亜鉛粉末を仮焼
するねらいは、仮焼により粉末粒子を粒成長させ、粉体
としての活性を低下させるためである。仮焼温度は40
0〜800℃、好ましくは400〜600℃が良い。仮
焼温度が高くなると粒子の凝結が強くなり、その後の解
砕がしにくくなるからである。仮焼時間は2時間以上が
好ましい。BEST MODE FOR CARRYING OUT THE INVENTION The manufacturing method of the present invention will be described in detail below. First, only zinc oxide powder is calcined prior to mixing the raw material zinc oxide (ZnO) and indium oxide (In 2 O 3 ) powders. The purpose of calcining the zinc oxide powder is to cause the powder particles to grow into particles by the calcining and reduce the activity as powder. Calcination temperature is 40
The temperature is 0 to 800 ° C, preferably 400 to 600 ° C. This is because the higher the calcination temperature, the stronger the particles are coagulated, and the more difficult the subsequent crushing is. The calcination time is preferably 2 hours or more.
【0007】次いで、得られた酸化亜鉛仮焼粉末を酸化
インジウムと混合する。混合方法としては、ボールミル
等の公知の方法が採用される。酸化亜鉛と酸化インジウ
ムの混合割合は公知の組成が適用できる。これらの粉末
の混合中あるいは混合後に必要に応じてバインダーを添
加し、次いで冷間静水圧(CIP)等の手段によりプレ
ス成形を行う。Next, the obtained zinc oxide calcined powder is mixed with indium oxide. As a mixing method, a known method such as a ball mill is adopted. A known composition can be applied to the mixing ratio of zinc oxide and indium oxide. A binder is added as necessary during or after the mixing of these powders, and then press molding is performed by means such as cold isostatic pressure (CIP).
【0008】さらに、得られた成型体を1200℃〜1
400℃の温度で焼結する。これにより、相対温度が9
0%以上の十分に高密度の焼結体ターゲットが得られ
る。焼結温度が1200℃以下では焼結体は高密度とは
ならず、また1400℃を越えるとZnOが昇華して組
成むらや組成ずれが生じる。焼結時間は2時間以上が好
ましい。次いで、焼結体は平面研削による面出し加工お
よび色むら部分除去のための外周部切断の機械加工を経
て製品ターゲットが得られる。Further, the obtained molded body is heated at 1200 ° C to 1 ° C.
Sinter at a temperature of 400 ° C. This gives a relative temperature of 9
A sufficiently high density sintered body target of 0% or more can be obtained. If the sintering temperature is 1200 ° C. or less, the sintered body does not have a high density, and if it exceeds 1400 ° C., ZnO sublimes, resulting in composition unevenness or composition deviation. The sintering time is preferably 2 hours or more. Next, the sintered body is subjected to surfacing processing by surface grinding and mechanical processing for cutting the outer peripheral portion for removing the uneven color portion to obtain a product target.
【0009】本発明のIn2O3−ZnO系焼結体ター
ゲットの製造方法は、In2O3とZnOの粉末を混合
するに先立ちZnO粉末のみを仮焼することを特徴とし
ている。ZnO粉末を仮焼するのは酸素の不定比性に起
因すると予想される色むらを抑制するためである。即
ち、酸化亜鉛は本来、酸素欠損型の不定比性を示すので
これを仮焼することにより粉体としての活性を低下さ
せ、酸素の出入りをしにくくするためである。酸化イン
ジウムと混合した状態で仮焼を行うと酸化インジウム粉
末の活性が一緒に低下してしまい、その後の焼結工程に
おいて十分に緻密化し難くなり、高密度の焼結体ターゲ
ットが得られない。The method of manufacturing an In 2 O 3 —ZnO-based sintered body target of the present invention is characterized in that only the ZnO powder is calcined prior to mixing the In 2 O 3 and ZnO powders. The ZnO powder is calcined in order to suppress color unevenness that is expected to be caused by the nonstoichiometry of oxygen. That is, zinc oxide originally exhibits an oxygen-deficient non-stoichiometric property, and thus calcining this reduces the activity as powder and makes it difficult for oxygen to enter and exit. If calcination is performed in a state of being mixed with indium oxide, the activity of the indium oxide powder is also reduced, and it becomes difficult to sufficiently densify in the subsequent sintering step, and a high density sintered body target cannot be obtained.
【0010】仮焼後の酸化亜鉛はBET表面積が0.2
〜4.0m2 /gの範囲であれば色むらが効果的に抑制
できる。また、焼結工程において焼結温度にまで昇温す
る速度を350℃/時以上とすると十分な高密度(相対
密度95%以上)を得ることを確実にすることができ、
特に800℃〜焼結温度(1200℃〜1400℃)の
間の昇温速度が重要である。さらに、ターゲットの組成
が酸化インジウム50wt%以上の場合に、高密度化
(相対密度で95%以上)および色むら抑制の効果が特
に著しく表われる。Zinc oxide after calcination has a BET surface area of 0.2.
Color unevenness can be effectively suppressed in the range of up to 4.0 m 2 / g. Further, if the rate of raising the temperature to the sintering temperature in the sintering step is 350 ° C./hour or more, it is possible to ensure that a sufficient high density (relative density of 95% or more) is obtained,
In particular, the rate of temperature increase between 800 ° C and the sintering temperature (1200 ° C to 1400 ° C) is important. Furthermore, when the composition of the target is 50 wt% or more of indium oxide, the effect of increasing the density (95% or more in relative density) and suppressing color unevenness is particularly remarkable.
【0011】[0011]
【実施例】以下に、本発明を実施例および比較例により
さらに説明する。表1に示すように、酸化亜鉛粉末を各
仮焼温度で2時間仮焼後、この酸化亜鉛の仮焼粉末と酸
化インジウム粉末を各組成となるように混合し、ジルコ
ニア(ZrO2)ボールを用いてボールミルで乾式で2
4時間混合した。次いで、この混合物にバインダーとし
てPVA水溶液を加え、5インチ×15インチ×18m
m厚サイズの平板状に圧力800kgf/cm2 で金型
を用いてプレス形成した。得られた成形体を焼結時間8
時間、大気中で各種焼結条件で焼成した。The present invention will be further described below with reference to examples and comparative examples. As shown in Table 1, after the zinc oxide powder was calcined at each calcining temperature for 2 hours, the calcined zinc oxide powder and the indium oxide powder were mixed to each composition, and zirconia (ZrO 2 ) balls were formed. Use a ball mill to dry 2
Mix for 4 hours. Then, an aqueous PVA solution was added to this mixture as a binder, and the size was 5 inches x 15 inches x 18 m.
A m-thick flat plate was press-formed with a pressure of 800 kgf / cm 2 using a mold. Sintering time of the obtained compact is 8
It was fired under various sintering conditions in the air for a time.
【0012】仮焼条件、焼結条件および各種試験結果
を、表1に示す。色むらの判定については、研削加工に
より色むら部分を除去して色むらの無いターゲットを得
るために除去しなければならない重量が、焼成直後の焼
結体の重量に対して30%を超えるものを×とし、30
%以内で済むものを○とした。Table 1 shows the calcination conditions, the sintering conditions and the results of various tests. Regarding the determination of color unevenness, the weight that must be removed to remove the color unevenness portion by grinding to obtain a target without color unevenness exceeds 30% of the weight of the sintered body immediately after firing. Is x and 30
The ones that were completed within% were rated as ○.
【0013】[0013]
【表1】 [Table 1]
【0014】表1に示す試験結果から分るように、本発
明の製造条件の範囲内である実施例1〜4の焼結体はい
ずれも密度は高く、色むらの発生程度も少ない。一方、
仮焼温度およびBET表面積が本発明の製造条件の範囲
外である比較例1は色むらが発生し、また焼結温度が範
囲外である比較例2は、密度が低い焼結体しか得られな
い。As can be seen from the test results shown in Table 1, all of the sintered bodies of Examples 1 to 4 which are within the manufacturing conditions of the present invention have high density and less uneven coloring. on the other hand,
In Comparative Example 1 in which the calcination temperature and the BET surface area are outside the manufacturing conditions of the present invention, color unevenness occurs, and in the Comparative Example 2 in which the sintering temperature is out of the range, only a sintered body having a low density is obtained. Absent.
【0015】[0015]
【発明の効果】本発明によれば、大型サイズの焼結体で
あっても均一でむらのない高密度のしかも色むらの少な
いものが得られる。特に焼結体の周辺部と中央部との色
むらの発生を抑制する事ができるため、従来の製品に比
べ歩留りが著しく向上する。EFFECTS OF THE INVENTION According to the present invention, even a large-sized sintered body can be obtained which is uniform and has no unevenness, high density, and little unevenness in color. In particular, since it is possible to suppress the occurrence of color unevenness between the peripheral portion and the central portion of the sintered body, the yield is significantly improved as compared with the conventional products.
Claims (4)
し、この仮焼した酸化亜鉛粉末と酸化インジウム粉末と
を混合し、次いでこの混合粉末をプレス成形後1200
℃〜1400℃で焼結することを特徴とする、酸化イン
ジウム−酸化亜鉛系焼結体ターゲットの製造方法。1. Zinc oxide powder is calcined at 400 ° C. to 800 ° C., the calcined zinc oxide powder and indium oxide powder are mixed, and the mixed powder is press-molded 1200.
The manufacturing method of the indium oxide-zinc oxide system sintered compact target characterized by sintering at ℃ -1400 ° C.
0.2〜4.0m2 /gであることを特徴とする請求項
1に記載のターゲットの製造方法。2. The method for producing a target according to claim 1, wherein the BET surface area of the zinc oxide powder after calcination is 0.2 to 4.0 m 2 / g.
速度を350℃/時以上とすることを特徴とする請求項
1および2に記載のターゲットの製造方法。3. The method for producing a target according to claim 1, wherein the rate of raising the temperature to the sintering temperature in the sintering step is 350 ° C./hour or more.
以上であることを特徴とする請求項1〜3に記載のター
ゲットの製造方法。4. The composition of the sintered body is 50% by weight of indium oxide.
It is above, The manufacturing method of the target of Claims 1-3 characterized by the above-mentioned.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26531795A JP3734540B2 (en) | 1995-10-13 | 1995-10-13 | Manufacturing method of indium oxide-zinc oxide based sintered compact target |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26531795A JP3734540B2 (en) | 1995-10-13 | 1995-10-13 | Manufacturing method of indium oxide-zinc oxide based sintered compact target |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09111444A true JPH09111444A (en) | 1997-04-28 |
JP3734540B2 JP3734540B2 (en) | 2006-01-11 |
Family
ID=17415519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26531795A Expired - Fee Related JP3734540B2 (en) | 1995-10-13 | 1995-10-13 | Manufacturing method of indium oxide-zinc oxide based sintered compact target |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3734540B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100289183B1 (en) * | 1997-05-23 | 2001-06-01 | 안드레아스 바우만/ 게하르트 리체르트 | How to manufacture crystalline solid powder with low electrical resistance |
JP2007009284A (en) * | 2005-06-30 | 2007-01-18 | Idemitsu Kosan Co Ltd | Manufacturing method of indium oxide-zinc oxide based sintered compact target |
JP2011179055A (en) * | 2010-02-26 | 2011-09-15 | Taiheiyo Cement Corp | Sputtering target |
CN102191465A (en) * | 2010-03-18 | 2011-09-21 | 中国科学院福建物质结构研究所 | Indium-doped zinc oxide target material and preparation method of transparent conducting film |
WO2017168797A1 (en) * | 2016-03-31 | 2017-10-05 | Jx金属株式会社 | Izo sintered compact sputtering target and method for producing same |
KR20180081686A (en) | 2016-03-31 | 2018-07-17 | 제이엑스금속주식회사 | Indium zinc oxide (izo) based sputtering target, and method for producing same |
-
1995
- 1995-10-13 JP JP26531795A patent/JP3734540B2/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100289183B1 (en) * | 1997-05-23 | 2001-06-01 | 안드레아스 바우만/ 게하르트 리체르트 | How to manufacture crystalline solid powder with low electrical resistance |
JP2007009284A (en) * | 2005-06-30 | 2007-01-18 | Idemitsu Kosan Co Ltd | Manufacturing method of indium oxide-zinc oxide based sintered compact target |
JP4504271B2 (en) * | 2005-06-30 | 2010-07-14 | 出光興産株式会社 | Method for producing indium oxide-zinc oxide sintered target |
JP2011179055A (en) * | 2010-02-26 | 2011-09-15 | Taiheiyo Cement Corp | Sputtering target |
CN102191465A (en) * | 2010-03-18 | 2011-09-21 | 中国科学院福建物质结构研究所 | Indium-doped zinc oxide target material and preparation method of transparent conducting film |
WO2017168797A1 (en) * | 2016-03-31 | 2017-10-05 | Jx金属株式会社 | Izo sintered compact sputtering target and method for producing same |
KR20180081686A (en) | 2016-03-31 | 2018-07-17 | 제이엑스금속주식회사 | Indium zinc oxide (izo) based sputtering target, and method for producing same |
KR20190019104A (en) | 2016-03-31 | 2019-02-26 | 제이엑스금속주식회사 | Indium zinc oxide (izo) based sputtering target, and method for producing same |
KR20200019654A (en) | 2016-03-31 | 2020-02-24 | 제이엑스금속주식회사 | Indium zinc oxide (izo) based sputtering target, and method for producing same |
Also Published As
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---|---|
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