JPH0883880A - Semiconductor package with temperature sensor - Google Patents

Abstract

(57) [Abstract] [Purpose] To realize accurate and responsive temperature compensation by directly detecting the temperature of the semiconductor. [Structure] A metal conductor such as tungsten, molybdenum or manganese used as a temperature measuring sensor is formed into a thin and long spiral or zigzag pattern having a resistance of several ohms to several hundred ohms, and an attempt is made to monitor it. In a semiconductor package arranged as a temperature sensor directly under the semiconductor chip or on the entire surface of the semiconductor package to be monitored, by connecting both poles of the temperature sensor to the temperature compensation circuit of the semiconductor package, the temperature change of the semiconductor is directly detected. As a result, accurate and responsive temperature compensation can be realized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to temperature compensation of a semiconductor using a tungsten, molybdenum / manganese conductor or the like as a temperature sensor.

[0002]

2. Description of the Related Art A semiconductor or the like has a reliability problem unless its temperature is maintained below a certain temperature. Therefore, it is important to perform temperature compensation. Generally, a method of calculating the thermal resistance from the package to the internal semiconductor element at the design stage to perform heat radiation design and temperature compensation is adopted. In addition, in products that require critical design or in protection circuits that prevent thermal runaway in high-power circuits,
A method in which a thermistor or a transistor is mounted as a temperature sensor around a semiconductor, which is a heating element on a substrate in a package, the temperature is measured and temperature compensation is performed, is adopted.

[0003]

The prior art has the following problems. (1) With the method of calculating thermal resistance, designing heat dissipation, and compensating for temperature, it is difficult to maintain a constant temperature constantly because the semiconductor operates stably even at the maximum operating temperature. There was a problem. (2) In the method of mounting a thermistor or a transistor as a temperature sensor around a semiconductor which is a heating element on a substrate in a package, the heating element is accurately placed because it is arranged at a position away from the semiconductor which is an actual heating element. The temperature change of the semiconductor could not be detected. Therefore, there is a problem that the temperature compensation response tends to be delayed. The present invention has been made to solve the above problems, and the semiconductor itself,
Alternatively, the temperature of the semiconductor package is directly measured to realize the temperature compensation of the semiconductor based on the accurate temperature.

[0004]

In a semiconductor package in which a semiconductor chip is mounted on a semiconductor chip mounting bonding layer, a temperature sensor layer having a temperature sensor formed by wiring a metal conductor having a high resistance value in a required shape is provided. It is provided on the lower surface of the semiconductor chip mounting bonding layer, and both electrodes of the temperature sensor are connected to a temperature compensating circuit provided outside the semiconductor package to detect a temperature change of the semiconductor chip to compensate the temperature of the semiconductor chip. Semiconductor package with temperature sensor.

The temperature sensor is provided only in a region substantially directly below the semiconductor chip.
The semiconductor package with the temperature sensor described.

The semiconductor package with a temperature sensor according to claim 1, wherein the temperature sensor is provided under substantially the entire area of the semiconductor chip mounting bonding layer.

[0007]

The heat generated in the semiconductor is conducted from the semiconductor chip mounting bonding layer to the temperature sensor layer via the wiring pattern layer, and is conducted to the temperature sensor formed by wiring a metal conductor having a high resistance value into a required shape. It As a result, the resistance value of the temperature sensor changes. The temperature compensation circuit unit detects the change in the resistance value to perform temperature compensation.

[0008]

[Embodiment 1] Embodiment 1 of the present invention (when used as a package temperature monitor) will be described in detail with reference to FIGS. FIG. 1 is a schematic sectional view, and FIG. 2 is a schematic perspective view of each layer of the package.

Normally, the electrical connection related portion of the ceramic package 10 is formed by using a thick film paste of copper, gold, tungsten or the like, and the chip mounting bonding layer 4 of FIG. 2A and the wiring of FIG. 2B. It is composed of the pattern layer 5. In the present invention, in addition to these two layers, a temperature sensor layer 6 as shown in FIG. 2C is added as a third layer and laminated to form a header (substrate) 7. In the figure, reference numeral 1 denotes a temperature sensor in which tungsten, molybdenum / manganese conductor or the like is formed in a thin and long spiral or zigzag pattern having a resistance of several ohms to several hundreds ohms. 2 is an electrical wiring pattern, 3 is a semiconductor chip mounted in the bonding region 8 of the chip mounting bonding layer 4, and the wiring pattern 2 of the semiconductor chip 3 and the chip mounting bonding layer 4 uses a gold wire or an aluminum wire 9. It was connected by wire bonding. Lead wires (not shown) are connected to electrodes (not shown) formed at both ends of the temperature sensor 1, and the lead wires are connected to the temperature compensation circuit of the ceramic package 7. Reference numeral 11 is a cap, and 12 is an input / output lead.

Since the heat from the semiconductor chip 3 is transmitted from the chip mounting bonding layer 4 to the temperature sensor 1 through the wiring pattern layer 5 so that the temperature of the temperature sensor 1 changes, the temperature of the semiconductor chip 3 is changed. The temperature change is immediately transmitted to the temperature sensor 1.

With this configuration, when the heat generated in the semiconductor chip 3 is transferred to the temperature sensor 1, the temperature of the temperature sensor 1 itself changes. Therefore, the resistance value of the conductor of the temperature sensor 1 changes. The temperature compensation circuit detects the change in the resistance value to compensate the temperature of the semiconductor chip 3 mounted on the header 7.

[0012]

[Embodiment 2] Embodiment 2 of the present invention (when used as a semiconductor chip temperature monitor) will be described in detail with reference to FIGS. FIG. 3 is a perspective view of an essential part, and FIG. 4 is a perspective view of an essential part of the laminated substrate. 4A shows an upper layer 13 which is a chip mounting bonding layer, and FIG. 4B shows a lower layer 14 which is a pattern layer.

Reference numeral 21 in the drawing denotes a semiconductor chip to be temperature monitored,
Reference numeral 22 denotes a temperature sensor formed on the lower layer 24 as described in the first embodiment to electrically insulate it directly below the semiconductor chip 21. Similar to the first embodiment, lead wires (not shown) are connected to electrodes (not shown) formed at both ends of the temperature sensor 22, and the lead wires are connected to the temperature compensation circuit. .

The heat from the semiconductor chip 21 is transferred from the upper layer 13 which is a chip mounting bonding layer to the temperature sensor 22 of the wiring pattern layer of the lower layer 14 so that the temperature of the temperature sensor 22 changes. 21
Changes in temperature are immediately transmitted to the temperature sensor 22.

With this configuration, when the heat generated in the semiconductor chip 21 is transferred to the temperature sensor 22, the temperature of the temperature sensor 22 itself changes. for that reason,
The resistance value of the conductor of the temperature sensor 22 changes. The temperature compensation circuit detects the change in the resistance value to compensate the temperature of the semiconductor chip 21.

[0016]

According to the present invention, a metal conductor such as tungsten, molybdenum and manganese used as a temperature measuring sensor is formed into a thin long spiral or zigzag pattern so as to have a resistance of several ohms to several hundreds ohms. The temperature sensor is placed directly below the semiconductor chip to be monitored, or on the entire surface of the semiconductor package to be monitored, and both poles of this temperature sensor are connected to the temperature compensation circuit of the semiconductor package so that the temperature change directly affects the temperature sensor. Since it is transmitted, the temperature change of the semiconductor can be directly sensed by the temperature sensor and the temperature can be compensated, so that the temperature compensation with high accuracy and high response speed can be obtained.

[Brief description of drawings]

FIG. 1 is a schematic sectional view of a first embodiment of the present invention.

FIG. 2 is a schematic perspective view of each layer of the package of FIG.

FIG. 3 is a perspective view of a main part of a second embodiment of the present invention.

FIG. 4 is a perspective view of an essential part of the laminated substrate of FIG.

[Explanation of symbols]

 1 Temperature Sensor 2 Wiring Pattern 3 Semiconductor Chip 4 Chip Mounting Bonding Layer 5 Wiring Pattern Layer 6 Temperature Sensor Layer 7 Header 10 Ceramic Package 21 Temperature Controlled Semiconductor Chip 22 Temperature Sensor 23 Upper Layer (Chip Mounting Bonding Layer) 24 Lower Layer (Wiring Pattern Layer) )

Claims (3)

[Claims] 1. A semiconductor package in which a semiconductor chip is mounted on a semiconductor chip mounting bonding layer, wherein a temperature sensor layer having a temperature sensor formed by wiring a metal conductor having a high resistance value in a required shape is mounted on the semiconductor chip. A temperature sensor provided on the lower surface of the bonding layer, wherein both electrodes of the temperature sensor are connected to a temperature compensating circuit provided outside the semiconductor package, and a temperature change of the semiconductor chip is detected to compensate the temperature of the semiconductor chip. With semiconductor package. 2. The temperature sensor is provided only in a region substantially directly below the semiconductor chip.
The semiconductor package with the temperature sensor described. 3. The semiconductor package with a temperature sensor according to claim 1, wherein the temperature sensor is provided under substantially the entire area of the semiconductor chip mounting bonding layer.