JPH0846123A - Semiconductor device and production thereof - Google Patents

Abstract

PURPOSE:To obtain a cavity down type semiconductor device in which the mounting density is enhanced and high pin count is achieved effectively. CONSTITUTION:A semiconductor element 26 is mounted in a cavity 22 made in a package body 20 and terminals 30 for external connection are provided on the cavity 22 side. In such semiconductor device, the opening of the cavity 22 is sealed by a rid 28 applied, on the outer face thereof, with a film 32 having a wiring pattern through a bonding layer 37. The wiring pattern 32a formed on the film 32 is bonded, at one end part thereof, with the terminal 30 for external connection. A connection lead 32b is extended from the outer peripheral edge of the film 32 at the other end of the wiring pattern 32a and connected electrically with a connection electrode formed on the outer face of the package body 20 on the periphery of the rid 28.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cavity-down type semiconductor device, and more particularly to a semiconductor device having external connection terminals arranged in a matrix and a method for manufacturing the same.

[0002]

2. Description of the Related Art In a semiconductor device such as PGA (pin grid array) or BGA (ball grid array), external connection terminals such as lead pins or solder balls are arranged in an array on the outer surface of a package body to improve mounting density. I am trying. Among these semiconductor devices, the cavity-down type semiconductor device is provided with an external connection terminal around the cavity opening, and the bottom surface of the cavity on which the semiconductor element is mounted is used as a heat dissipation plate to improve the heat dissipation of the semiconductor device.

FIG. 7 shows a conventional example of a cavity-down type semiconductor device. Reference numeral 5 is a semiconductor element, 6 is a heat dissipation plate, and 7 is a lid sealed to the opening of the cavity. When the package body is made of a material having a low heat conductivity such as a plastic material, the heat dissipation of the package can be suitably improved by mounting the heat dissipation plate 6 on the bottom of the cavity in this way. In the illustrated example, the solder balls 8 are used as the external connection terminals to enable surface mounting.

[0004]

As described above, the cavity-down type semiconductor device can improve heat dissipation as compared with the cavity-up type semiconductor device, but in terms of the mounting density of external connection terminals, the cavity-up type semiconductor device can be improved. There is a problem that it is inferior to the semiconductor device. This is because in the cavity-down type semiconductor device, the range in which the external connection terminals are arranged is limited to the outer surface of the package body outside the lid 7.

As a method for solving the problem of poor packaging density in the cavity-down type semiconductor device, a semiconductor device in which external connection terminals are arranged on the entire outer surface of the package body including the lid portion has been proposed. FIG. 8 shows a schematic diagram thereof. This semiconductor device comprises a package cap 9 on which a semiconductor element is mounted, and a package base 10 having external connection terminals arranged on one side thereof, which are joined together by a sealing glass frit 11 (actual opening 3-61).
No. 346).

A bonding metal is formed in a predetermined arrangement on the sealing glass frit 11, and the package cap 9 and the package base 10 are glass-welded and electrically connected. In this semiconductor device, the glass is melted and bonded. Therefore, there are problems that the connection of the joining metal is hindered by the molten glass, and the molten glass is separated into the package cap 9 and the package base 10 side and is disconnected. Also, when melting the glass and the joining metal to join them,
Since a practical low melting point metal has a melting point of about 200 ° C. or higher and a low melting point glass has a softening point of 300 ° C. or higher, there is a problem that this method cannot be applied to other than a ceramic package.

The present invention has been made to solve these problems, and an object thereof is to effectively improve the packaging density of a cavity-down type semiconductor device, and not limited to a ceramic package. An object of the present invention is to provide a semiconductor device and a manufacturing method thereof that can be suitably applied to packages of various materials such as plastic packages.

[0008]

In order to achieve the above object, the present invention comprises the following constitutions. That is, in a semiconductor device in which a semiconductor element is mounted in a cavity provided in a package body and an external connection terminal is provided on the cavity side, an opening of the cavity is sealed by a lid and bonded to an outer surface of the lid. A film with a wiring pattern is joined via a layer, an external connection terminal is joined to one end of the wiring pattern of the film with a wiring pattern, and the other end of the wiring pattern is formed of the film with a wiring pattern. A connection lead extending from the outer peripheral edge is formed, and the connection lead is electrically connected to a connection electrode formed on the outer surface of the package body around the lid. The external connection terminals are joined to the outer surface of the lid and the outer surface of the package body around the lid. The external connection terminals are solder balls, and the external connection terminals are lead pins for insertion or surface mounting. The package body is made of plastic, and the package body is made of ceramic. In addition, the film with a wiring pattern has an electrical insulation property, a base film in which a bonding hole for providing an external connection terminal is formed, a wiring pattern formed on the base film, and the base film A connecting layer provided on a surface on which a wiring pattern is formed, one end of the wiring pattern is exposed in the bonding hole, and the other end is a connection lead extending from the outer peripheral edge of the film with the wiring pattern. It is characterized by being formed. The material of the lid is the same as the material of the package body.

Further, in a method of manufacturing a semiconductor device in which a semiconductor element is mounted in a cavity provided in a package body and an external connection terminal is provided on the cavity side, after mounting the semiconductor element in the cavity, The opening of the cavity is sealed with a lid, a film with a wiring pattern is joined to the outer surface of the lid via a joining layer, and an external connection terminal is joined to one end of the wiring pattern of the film with a wiring pattern, and It is characterized in that the connection lead formed from the other end of the wiring pattern extending from the outer peripheral edge of the film with a wiring pattern is electrically connected to a connection electrode formed on the outer surface of the package body around the lid. Further, in the film with a wiring pattern, a bonding hole for forming an external connection terminal is formed in a base film having electrical insulation properties, and one end is exposed in the bonding hole on the base film and the other end. After the portion extends from the outer peripheral edge of the base film to form a wiring pattern to be a connection lead, a bonding layer is formed on the surface of the base film on which the wiring pattern is provided.

[0010]

The semiconductor device according to the present invention is a cavity-down type semiconductor device in which a film with a wiring pattern is adhered to the outer surface of the lid, and external connection terminals such as solder balls or lead pins are bonded to the wiring pattern provided on the film with the wiring pattern. By doing so, the outer surface of the lid can be effectively used as a space for disposing the external connection terminals, and it is possible to suitably cope with the increased number of pins. The film with a wiring pattern is one in which a wiring pattern is formed by patterning on a base film having electrical insulation properties, and the connection lead extended from the outer peripheral edge of the film with a wiring pattern and the connection electrode provided on the outer surface of the package body are By connecting by soldering or the like, the external connection terminal and the wiring pattern such as the internal wiring of the package body are electrically connected. Thus, the packaging density of the semiconductor device can be increased, and the semiconductor device can be provided as a highly reliable semiconductor device.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 is a sectional view showing the configuration of an embodiment of a semiconductor device according to the present invention. The semiconductor device of the embodiment is provided by penetrating the cavity 22 in the package body 20 formed by the multilayer printed circuit board,
The heat dissipation plate 24 is joined to the bottom of the second member 2, and the semiconductor element 26 is joined to and supported by the heat dissipation plate 24. In the embodiment, a copper plate is used as the heat dissipation plate 24, and the heat dissipation plate 24 is bonded to the package body 20 using an epoxy prepreg. The semiconductor element 26 is adhered to the heat dissipation plate 24 using a glass epoxy adhesive, and the package body 2
It was electrically connected to a wiring pattern such as 0 internal wiring by wire bonding.

The cavity 22 is sealed by using a glass epoxy lid 28 with an epoxy adhesive.
By joining to the opening edge of 2. When joining the lid 28, the peripheral portion of the lid 28 is arranged at the stepped portion provided at the edge of the cavity 22 so that the outer surface of the lid 28 and the outer surface of the package body 20 have substantially the same height. Set the thickness of itself and the step of the joint. FIG. 3 shows a state in which the lid 28 is joined to the package body 20.

As shown in FIG. 1, the semiconductor device of the embodiment has
Solder balls 30 as external connection terminals are arranged in a matrix on the outer surface of the lid 28. Each solder ball 30 is electrically connected to the semiconductor element 26,
In the embodiment, after the lid 28 is bonded, the wiring pattern film 32 provided with the wiring pattern 32a for external connection is provided.
Is bonded to the outer surface of the lid 28, and the solder ball 30 is bonded to one end of the wiring pattern 32a. The wiring pattern 32a is formed in a predetermined pattern in which the solder balls 30 are arranged in a matrix.

The film 32 with a wiring pattern is a two-layer TA
B, has the same structure as a TAB tape such as a three-layer TAB,
It can be manufactured by the same process as the manufacturing method of the TAB tape. Film with wiring pattern 3
2 shows an example of production. When manufacturing the film 32 with a wiring pattern, first, a bonding hole 34a for bonding the solder ball 30 is formed in a base film 34 (FIG. 2 (a)) having an adhesive 33 applied on one surface (see FIG. b)). The bonding hole 34a is formed in a circular shape in plan view in accordance with the size of the solder ball 30.

Next, the copper foil 35 is adhered (FIG. 2 (c)), a resist pattern 36 is provided according to the wiring pattern 32a to be formed on the copper foil 35 (FIG. 2 (d)), and the copper foil 35 is etched. Then, the wiring pattern 32a is formed. The other end of the wiring pattern 32a is extended from the outer peripheral edge of the base film 34 in a lead shape to form a connection lead 32b used for electrical connection with the package body 20 (FIG. 2 (e)).

The semiconductor device shown in FIG. 1 is formed by joining the film 32 with a wiring pattern thus formed to the outer surface of the lid 28. Therefore, as shown in FIG. 3, a bonding layer 37 is provided on the wiring pattern film 32 to bond the wiring pattern film 32 to the outer surface of the lid 28. As the bonding layer 37, for example, a sheet-shaped epoxy-based prepreg can be used. In the example, the bonding layer 37 side of the film 32 with a wiring pattern was pressed against the outer surface of the lid 28 and cured at 150 ° C. for bonding.

The electrical connection between the wiring pattern 32a provided on the film 32 with a wiring pattern and the wiring pattern such as the internal wiring provided on the package body 20 is performed by providing the connecting electrode 40 on the outer surface of the package body 20. The connection lead 32b extending outward from the outer peripheral edge of the film 32 is soldered to the connection electrode 40 and connected by thermocompression bonding by a heating and pressing method.

The connection leads 32b are formed by arranging the other end of the wiring pattern 32a along the outer edge of the film 32 with a wiring pattern at a predetermined interval. The connection leads 32b are each wiring pattern 32a having a joint portion of the solder ball 30. Conduct to. Connection electrode 40 provided on the package body 20
Are arranged in accordance with the arrangement positions of these connection leads 32b extending from the outer peripheral edge of the film 32 with a wiring pattern, and are electrically connected to a wiring pattern such as internal wiring electrically connected to the semiconductor element 26.

As described above, the wiring pattern film 32 is bonded to the outer surface of the lid 28 to form the connection lead 32b.
And the connection electrode 40 are electrically connected, and the solder ball 30 is joined to one end of the wiring pattern to obtain the semiconductor device shown in FIG. In the embodiment, the solder balls 3
As for 0, lead 37% -tin 63% is used, and about 23
By reflowing at 0 ° C., the connection electrode 40 and the connection lead 32b and the solder ball 30 were collectively connected. Wiring pattern 32a in the joining hole 34a
When the solder ball is bonded to the base film 34, the base film 34 serves as a solder resist, and the solder ball 30 can be formed into a suitable shape. The solder balls 30 may be joined before joining the film 32 with a wiring pattern to the package body 20.

By setting the outer surface of the lid 28 and the outer surface of the package body 20 at substantially the same height, the connection lead 32 is formed.
The connection between b and the connection electrode 40 can be ensured. However,
The connection is possible even when the outer surface of the lid 28 projects slightly outward. After the bonding, the semiconductor device is washed and the connecting portion between the connecting electrode 40 and the connecting lead 32b is coated with a silicone resin-based potting liquid to obtain a semiconductor device.

The film 32 with a wiring pattern used in the above embodiment has one wiring pattern 32a, but it may have a multi-layer structure in which two layers of the wiring pattern 32a are provided. FIG. 4 shows an example of a film 32 with a wiring pattern having a two-metal structure in which the wiring pattern 32a has two layers. 32c is a wiring pattern used as a ground layer, and 32d is a wiring pattern for connecting the solder balls 30. 34b is a solder resist layer, which can be made of the same material as the base film 34.

In the semiconductor device of the above embodiment, a film 32 with a wiring pattern is adhered to the outer surface of the lid 28, and the lid 2
8 is a product in which solder balls 30 are joined to the outer surface of 8 in a matrix. FIG. 5 shows, as another embodiment, an example in which the solder balls 30 of the external connection terminals are joined to the outer surface of the package body 20 together with the outer surface portion of the lid 28. The solder balls 30 arranged on the outer surface of the package body 20 are formed by providing electrodes 42 on the outer surface of the package body 20 and joining the solder balls 30 as in the conventional cavity-down type semiconductor device.

Thus, as shown in FIG. 5, the solder balls 30 can be arranged on the entire mounting surface side of the semiconductor device including the lid 28. In the case of this embodiment, it is necessary to take care so that the solder balls 30 provided on the outer surface of the package body 20 and the solder balls 30 provided on the lid 28 are joined at the same height surface so that they can be surely connected to the mounting substrate during mounting. is there. In the embodiment, the attachment position and the like of the lid 28 are adjusted so that the mounting surface of the semiconductor device becomes a flat surface in the state where the film 32 with a wiring pattern is joined to the lid 28.

Although the solder ball 30 is used as the external connection terminal for surface mounting in the above-mentioned embodiment, the solder ball 30
Alternatively, the lead pin 44 can be used as an external connection terminal. FIG. 6 shows an embodiment in which the lead pins 44 are joined to the film 32 with a wiring pattern to form a pin grid array type semiconductor device. As the lead pin 44, a short pin for surface mounting can be used in addition to the one for insertion. Further, as shown in FIG. 5, lead pins 44 are formed on the entire outer surface of the package body 20 and the outer surface of the lid 28.
It is also possible to attach.

Further, the package body 20 of the semiconductor device may be made of ceramic as well as plastic as in the above embodiment. As the plastic material, glass-epoxy, glass-polyimide, glass-bismaleimide triazine, etc. can be used. As the ceramic material, alumina, mullite, aluminum nitride, glass-ceramic, forsterite, or the like can be used.

The lid 28 may be made of a metal material, a plastic material, a ceramic material, or the like. Generally, the material of the lid 28 is preferably used in the same combination as the material of the package body 20 in order to match the thermal expansion coefficient and obtain airtightness. Of course, it is also possible to use it in a combination different from that of the package body 20 if necessary. In the case of the method of adhering the film 32 with a wiring pattern to the outer surface of the lid 28 so that the external connection terminals can be joined as in the above embodiment, the material of the lid 28 is not particularly limited.

[0027]

As described above, according to the semiconductor device of the present invention, the outer surface of the lid in the cavity-down type semiconductor device is utilized as a space for arranging the external connection terminals, thereby effectively increasing the packaging density. Therefore, it is possible to effectively increase the number of pins. Further, the wiring pattern of the film with a wiring pattern provided on the outer surface of the lid and the connection electrode of the package body can be surely electrically connected, and the product can be provided as a highly reliable product. Further, according to the method of the present invention, it is possible to easily manufacture a semiconductor device in which an external connection terminal is provided on the outer surface of the lid.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a configuration of an example of a semiconductor device.

FIG. 2 is an explanatory diagram showing an example of a method of manufacturing a film with a wiring pattern used for manufacturing a semiconductor device.

FIG. 3 is an explanatory diagram showing a method of joining a film with a wiring pattern to a package body.

FIG. 4 is an explanatory diagram showing another configuration example of a film with a wiring pattern.

FIG. 5 is a cross-sectional view showing the configuration of another embodiment of the semiconductor device.

FIG. 6 is a cross-sectional view showing an example of a semiconductor device in which a lead pin is joined as an external connection terminal.

FIG. 7 is a cross-sectional view showing a conventional example of a cavity-down type semiconductor device.

FIG. 8 is an explanatory diagram showing a conventional method for producing a cavity-down type semiconductor device.

[Explanation of symbols]

 20 Package Body 22 Cavity 24 Heat Sink 26 Semiconductor Chip 28 Lid 30 Solder Ball 32 Film with Wiring Pattern 32a Wiring Pattern 32b Connection Lead 34 Base Film 34a Bonding Hole 37 Bonding Layer 40 Connection Electrode 42 Electrode 44 Lead Pin

Continuation of front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location H01L 23/12 H05K 7/20 D

Claims (10)

[Claims] 1. A semiconductor device in which a semiconductor element is mounted in a cavity provided in a package body and an external connection terminal is provided on the cavity side, wherein an opening of the cavity is sealed with a lid, A film with a wiring pattern is bonded to the outer surface via a bonding layer, an external connection terminal is bonded to one end of the wiring pattern of the film with a wiring pattern, and the wiring pattern is bonded to the other end of the wiring pattern. A semiconductor device, in which a connecting lead extending from an outer peripheral edge of the attached film is formed, and the connecting lead is electrically connected to a connecting electrode formed on an outer surface of the package body around the lid. apparatus. 2. The semiconductor device according to claim 1, wherein external connection terminals are joined to an outer surface of the lid and an outer surface of the package body around the lid. 3. The semiconductor device according to claim 1, wherein the external connection terminal is a solder ball. 4. The semiconductor device according to claim 1, wherein the external connection terminal is a lead pin for insertion or surface mounting. 5. The semiconductor device according to claim 1, wherein the package body is made of plastic. 6. The semiconductor device according to claim 1, wherein the package body is made of ceramic. 7. A base film, wherein the film with a wiring pattern is electrically insulating, and in which a bonding hole for providing an external connection terminal is formed, a wiring pattern formed on the base film, And a bonding layer provided on the surface of the base film on which the wiring pattern is formed, one end of the wiring pattern is exposed in the bonding hole, and the other end extends from the outer peripheral edge of the film with wiring pattern. The semiconductor device according to claim 1, wherein the semiconductor device is formed on the connection lead. 8. The semiconductor device according to claim 1, wherein the material of the lid is the same as the material of the package body. 9. A method of manufacturing a semiconductor device, wherein a semiconductor element is mounted in a cavity provided in a package body, and an external connection terminal is provided on the cavity side, after mounting the semiconductor element in the cavity, The opening of the cavity is sealed with a lid, a film with a wiring pattern is joined to the outer surface of the lid via a joining layer, and an external connection terminal is joined to one end of the wiring pattern of the film with a wiring pattern, and A semiconductor characterized in that a connection lead formed from the other end of the wiring pattern extending from the outer peripheral edge of the film with a wiring pattern is electrically connected to a connection electrode formed on the outer surface of the package body around the lid. Device manufacturing method. 10. A joint hole for forming an external connection terminal is formed in a base film having electrical insulation of the film with a wiring pattern, one end of which is exposed in the joint hole on the base film. 10. The bonding layer is formed on the surface of the base film on which the wiring pattern is provided, after the other end portion extends from the outer peripheral edge of the base film to form a wiring pattern serving as a connection lead. A method for manufacturing a semiconductor device as described above.