JPH08329424A - Magnetoresistive head and magnetic recording / reproducing apparatus - Google Patents
Magnetoresistive head and magnetic recording / reproducing apparatusInfo
- Publication number
- JPH08329424A JPH08329424A JP13763295A JP13763295A JPH08329424A JP H08329424 A JPH08329424 A JP H08329424A JP 13763295 A JP13763295 A JP 13763295A JP 13763295 A JP13763295 A JP 13763295A JP H08329424 A JPH08329424 A JP H08329424A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- multilayer film
- magnetoresistive effect
- effect element
- magnetic recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 claims abstract description 37
- 230000004907 flux Effects 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 230000005330 Barkhausen effect Effects 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000005381 magnetic domain Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 18
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910003271 Ni-Fe Inorganic materials 0.000 description 4
- 229910018553 Ni—O Inorganic materials 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910017061 Fe Co Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 230000005692 magnetic supperlatices Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910018499 Ni—F Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
Abstract
(57)【要約】
【構成】磁気記録媒体からの磁界を磁路１２を用いて多
層膜１１に印加する。さらに磁路１２の幅を多層膜１１
の長手方向の長さより狭くすることにより、磁壁の多く
発生する多層膜１１の端部の磁壁の移動を抑え、また、
一対の電極１４の幅を多層膜１１の長手方向の長さより
狭くすることにより、磁壁の生じにくい多層膜１１の中
央部の電気抵抗率の変化を検出する。
【効果】多層膜を用いた磁気抵抗効果素子のバルクハウ
ゼンノイズが抑制される。また、磁気抵抗効果素子が直
接磁気記録媒体に接触しないので加熱によるノイズを発
生しない。また、磁気ヘッドを磁気記録再生装置に用い
るため、高性能磁気記録再生装置が得られた。
(57) [Summary] [Structure] A magnetic field from a magnetic recording medium is applied to the multilayer film 11 using a magnetic path 12. Further, the width of the magnetic path 12 is set to the multilayer film 11
Is smaller than the length in the longitudinal direction, the movement of the magnetic domain wall at the end of the multilayer film 11 in which a large number of magnetic domain walls are generated is suppressed, and
By making the width of the pair of electrodes 14 narrower than the length of the multilayer film 11 in the longitudinal direction, a change in the electrical resistivity of the central portion of the multilayer film 11 in which a domain wall is less likely to occur is detected. [Effect] Barkhausen noise of a magnetoresistive effect element using a multilayer film is suppressed. Further, since the magnetoresistive effect element does not directly contact the magnetic recording medium, noise due to heating is not generated. Further, since the magnetic head is used in the magnetic recording / reproducing apparatus, a high performance magnetic recording / reproducing apparatus was obtained.
Description
【０００１】[0001]
【産業上の利用分野】本発明は高い磁気抵抗効果を有す
る多層膜を用いた磁気抵抗効果素子，磁気ヘッド，磁気
記録再生装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element, a magnetic head and a magnetic recording / reproducing apparatus using a multilayer film having a high magnetoresistive effect.
【０００２】[0002]
【従来の技術】磁気記録の高密度化に伴い、再生用磁気
ヘッドに用いる磁気抵抗効果材料として、高い磁気抵抗
効果を示す材料が求められている。１９８８年，Baibic
h らによる、フィジカル・レビュー・レターズ（Pysica
l Review Letters）、第６１巻，第２１号，２４７２〜
２４７５ページに記載の「(001)Fe／(001)Cr磁性超格子
の巨大磁気抵抗効果(Giant Magnetoresistance of (00
1)Fe／(001）Cr MagneticSuperlattices)」のように、
多層構造を持つ磁性膜（Ｆｅ／Ｃｒ多層膜）において、
約５０％の磁気抵抗変化率（４.２Ｋ において）が報告
されている。2. Description of the Related Art As the magnetic recording density increases, a material having a high magnetoresistive effect is required as a magnetoresistive effect material used for a reproducing magnetic head. 1988, Baibic
Physical Review Letters (Pysica
l Review Letters), Vol. 61, No. 21, 2472-
See "Giant Magnetoresistance of (00) Fe / (001) Cr magnetic superlattice" on page 2475.
1) Fe / (001) Cr Magnetic Superlattices) ”,
In a magnetic film (Fe / Cr multilayer film) having a multilayer structure,
A magnetoresistance change rate (at 4.2K) of about 50% is reported.
【０００３】[0003]
【発明が解決しようとする課題】上記Ｆｅ／Ｃｒ多層膜
と類似した構造を有するＮｉ−Ｆｅ／Ｃｕ多層膜は、比
較的高い磁気抵抗変化率を有するが、多層膜を用いた磁
気抵抗効果素子においても、従来の磁気抵抗効果素子と
同様のバルクハウゼンノイズが生じるという問題があ
る。The Ni-Fe / Cu multilayer film having a structure similar to the above Fe / Cr multilayer film has a relatively high magnetoresistance change rate, but a magnetoresistive effect element using the multilayer film. However, there is a problem that Barkhausen noise similar to that of the conventional magnetoresistive effect element is generated.
【０００４】本発明の目的は、多層膜を用いた磁気抵抗
効果素子におけるバルクハウゼンノイズの抑制方法を提
供することにある。An object of the present invention is to provide a method of suppressing Barkhausen noise in a magnetoresistive effect element using a multilayer film.
【０００５】[0005]
【課題を解決するための手段】本発明者等は、磁性層，
非磁性層を積層した多層膜を用いた磁気抵抗効果素子に
ついて鋭意研究を重ねた結果、上記多層膜の中央部のみ
に磁界およびセンス電流を印加することにより、バルク
ハウゼンノイズが抑制されることを見出し、本発明を完
成するに至った。The present inventors have found that the magnetic layer,
As a result of earnest studies on a magnetoresistive element using a multilayer film in which non-magnetic layers are laminated, it is shown that Barkhausen noise is suppressed by applying a magnetic field and a sense current only to the central portion of the multilayer film. Heading out, the present invention has been completed.
【０００６】すなわち、磁性層と非磁性層とが交互に積
層されている多層膜、および上記多層膜に磁界を印加す
る磁路、および一対の電極からなる磁気抵抗効果素子に
おいて、上記磁路の幅を上記多層膜の長手方向の長さよ
り狭くすることにより、磁壁の多く発生する多層膜の端
部の磁壁の移動を抑え、また、上記一対の電極の幅を上
記多層膜の長手方向の長さより狭くすることにより、磁
壁の生じにくい多層膜の中央部の電気抵抗率の変化を検
出する。That is, in a magnetoresistive effect element comprising a multilayer film in which magnetic layers and nonmagnetic layers are alternately laminated, a magnetic path for applying a magnetic field to the multilayer film, and a pair of electrodes, By making the width narrower than the length in the longitudinal direction of the multilayer film, the movement of the magnetic domain wall at the end of the multilayer film in which a large number of domain walls are generated is suppressed, and the width of the pair of electrodes is set to the longitudinal direction of the multilayer film. By making the width narrower than this, the change in the electrical resistivity of the central portion of the multilayer film in which the domain wall is less likely to occur is detected.
【０００７】[0007]
【作用】これらの結果、多層膜を用いた磁気抵抗効果素
子のバルクハウゼンノイズが抑制される。また、上述の
ような構造のため、磁気抵抗効果素子が直接磁気記録媒
体に接触せず、加熱によるノイズを発生しない。また、
上記磁気抵抗効果素子は磁気ヘッドなどに好適であり、
また、上記磁気ヘッドを用いることにより、高性能磁気
記録再生装置を得ることができる。As a result, Barkhausen noise of the magnetoresistive effect element using the multilayer film is suppressed. Further, because of the structure as described above, the magnetoresistive effect element does not directly contact the magnetic recording medium, and noise due to heating does not occur. Also,
The magnetoresistive effect element is suitable for a magnetic head or the like,
Further, by using the above magnetic head, a high performance magnetic recording / reproducing apparatus can be obtained.
【０００８】[0008]
〈実施例１〉本発明の磁気抵抗効果素子の平面図を図１
に示す。多層膜１１の端部にＮｉ−Ｆｅ系合金からなる
一対の磁路１２を接触させる。磁束の方向１３は、多層
膜の長手方向と直角をなす。磁路１２の幅は、多層膜１
１の長手方向の長さより狭い。Ｃｕからなる電極１４
は、磁路１２と平行に多層膜１１に接触する。本実施例
では、多層膜１１の長手方向の長さは４μｍ、磁路１２
の幅は２μｍ、電極の多層膜に接している部分の幅は
１.５μｍ とした。Example 1 A plan view of a magnetoresistive effect element of the present invention is shown in FIG.
Shown in A pair of magnetic paths 12 made of a Ni—Fe alloy is brought into contact with the ends of the multilayer film 11. The magnetic flux direction 13 is perpendicular to the longitudinal direction of the multilayer film. The width of the magnetic path 12 is the multilayer film 1
1 is smaller than the length in the longitudinal direction. Electrode 14 made of Cu
Contacts the multilayer film 11 in parallel with the magnetic path 12. In this embodiment, the length of the multilayer film 11 in the longitudinal direction is 4 μm, and the magnetic path 12 is
Has a width of 2 μm, and the width of a portion of the electrode in contact with the multilayer film is 1.5 μm.
【０００９】図２は多層膜１１の断面構造を示す。この
多層膜の形成方法を以下に説明する。まず、ガラスから
なる基板２１の上に、イオンビームスパッタリング装置
を用い、厚さ５ｎｍのＮｉ−Ｏ系のバッファ層２２を形
成した。スパッタリングターゲットには、ＮｉＯを用い
たが、スパッタリングにより形成したバッファ層の組成
は、化学量論的組成からはずれているものと考えられ
る。スパッタリング条件は、Ａｒ圧力０.０２Ｐａ ，イ
オンガン加速電圧９００Ｖ，イオン電流１２０ｍＡであ
る。上述のＮｉ−Ｏ系のバッファ層を形成した基板を一
度、イオンビームスパッタリング装置から出し、再び、
装置内に戻した。FIG. 2 shows a sectional structure of the multilayer film 11. The method for forming this multilayer film will be described below. First, a 5 nm-thick Ni—O-based buffer layer 22 was formed on a glass substrate 21 using an ion beam sputtering apparatus. Although NiO was used as the sputtering target, it is considered that the composition of the buffer layer formed by sputtering deviates from the stoichiometric composition. The sputtering conditions are an Ar pressure of 0.02 Pa, an ion gun acceleration voltage of 900 V, and an ion current of 120 mA. The substrate on which the above-mentioned Ni-O-based buffer layer was formed was once taken out from the ion beam sputtering apparatus, and again,
Returned to the device.
【００１０】さらに、Ｎｉ−Ｏ系のバッファ層２２の上
に、厚さ１.５ｎｍ のＮｉ−Ｆｅ−Ｃｏ磁性層２３およ
び厚さ２.３ｎｍ のＣｕ非磁性層２４を交互に積層し
た。磁性層２３の層数は１０層である。スパッタリング
条件は、Ａｒ圧力０.０２Ｐａ，イオンガン加速電圧３
００Ｖ，イオン電流４０ｍＡである。Ｎｉ−Ｆｅ−Ｃｏ
磁性層形成用のスパッタリングターゲットには、Ｎｉ−
１６ａｔ％Ｆｅ−１８ａｔ％Ｃｏの組成の合金ターゲッ
トを用いた。多層膜形成中には磁界を印加した。このた
め、図１の多層膜１１の長手方向に磁化容易方向が存在
する。Further, a Ni-Fe-Co magnetic layer 23 having a thickness of 1.5 nm and a Cu non-magnetic layer 24 having a thickness of 2.3 nm were alternately laminated on the Ni-O system buffer layer 22. The number of magnetic layers 23 is 10. Sputtering conditions are Ar pressure 0.02 Pa, ion gun acceleration voltage 3
The voltage is 00 V and the ion current is 40 mA. Ni-Fe-Co
The sputtering target for forming the magnetic layer is Ni-
An alloy target having a composition of 16 at% Fe-18 at% Co was used. A magnetic field was applied during the formation of the multilayer film. Therefore, the easy magnetization direction exists in the longitudinal direction of the multilayer film 11 of FIG.
【００１１】上述の本発明の磁気抵抗効果素子を加工
し、磁路の端部を露出させ、あらかじめ記録されたフロ
ッピーディスクに磁路を接触させ、フロッピーディスク
を回転し、記録された信号を検出した。全部で２０個の
素子を作製し、信号の再生を行った結果、１６個の素子
がバルクハウゼンノイズを生じず、良好な特性を示し
た。The above magnetoresistive element of the present invention is processed to expose the end portion of the magnetic path, the magnetic path is brought into contact with a prerecorded floppy disk, the floppy disk is rotated, and the recorded signal is detected. did. As a result of producing 20 devices in total and reproducing the signals, 16 devices showed good characteristics without Barkhausen noise.
【００１２】上述の素子にヘルムホルツコイルを使って
磁界を印加し、磁界・電圧曲線を測定すると、１０個の
素子がバルクハウゼンノイズを生じた。ヘルムホルツコ
イルを使って磁界を印加した場合、多層膜に一様に磁界
が印加される。この結果、磁壁の多く発生する多層膜端
部にも磁束が入り、磁壁が移動したものと思われる。こ
れに対し、前述のフロッピーディスク媒体を用いた実験
では、磁束は磁路を通り多層膜に入る。このため、多層
膜の中央部に重点的に磁束が印加される。このため、多
層膜端部の磁壁が移動しにくく、バルクハウゼンノイズ
が減少したものと思われる。When a magnetic field was applied to the above-mentioned element using a Helmholtz coil and the magnetic field / voltage curve was measured, 10 elements produced Barkhausen noise. When a magnetic field is applied using the Helmholtz coil, the magnetic field is applied uniformly to the multilayer film. As a result, it is considered that the magnetic flux also entered the edges of the multilayer film where many domain walls were generated, and the domain walls moved. On the other hand, in the experiment using the above-mentioned floppy disk medium, the magnetic flux passes through the magnetic path and enters the multilayer film. Therefore, the magnetic flux is mainly applied to the central portion of the multilayer film. Therefore, it is considered that Barkhausen noise is reduced because the domain wall at the end of the multilayer film is hard to move.
【００１３】また、上述の構造により、センス電流も多
層膜中央部に集中的に流れ、磁壁の多く発生する多層膜
端部にはセンス電流が流れにくい。このため、磁気抵抗
効果素子は、主に、多層膜中央部の磁化の変化を検出し
たものと考えられる。Further, due to the above structure, the sense current also flows intensively in the central portion of the multilayer film, and the sense current is less likely to flow in the end portions of the multilayer film where many domain walls are generated. Therefore, it is considered that the magnetoresistive effect element mainly detects the change in the magnetization in the central portion of the multilayer film.
【００１４】また、上述のような構造のため、磁気抵抗
効果素子が直接磁気記録媒体に接触せず、加熱によるノ
イズを発生しない。Further, because of the above-described structure, the magnetoresistive effect element does not directly contact the magnetic recording medium, and noise due to heating does not occur.
【００１５】また、従来の異方性磁気抵抗効果を有する
材料を磁気抵抗効果材料に用いると、センス電流の方向
と磁化の向きにより磁気抵抗効果を生じる。このため、
センス電流の方向が磁束の方向と平行である上述の素子
構造では、従来型の磁気抵抗効果素子と異なる符号の磁
気抵抗効果を生じる。これに対し、異方性磁気抵抗効果
を利用しない多層膜は、センス電流の方向の影響が少な
く、本発明の構造を有する磁気抵抗変化率素子には極め
て有利である。When a conventional material having an anisotropic magnetoresistive effect is used as the magnetoresistive effect material, the magnetoresistive effect is produced depending on the direction of the sense current and the direction of magnetization. For this reason,
In the above-mentioned element structure in which the sense current direction is parallel to the magnetic flux direction, a magnetoresistive effect having a sign different from that of the conventional magnetoresistive effect element is produced. On the other hand, the multilayer film that does not utilize the anisotropic magnetoresistive effect has little influence on the direction of the sense current, and is extremely advantageous for the magnetoresistive element having the structure of the present invention.
【００１６】〈実施例２〉本発明の磁気抵抗効果素子を
用い、磁気ヘッドを作製した。基板にはＡｌ2Ｏ3・Ｔｉ
Ｃを主成分とする焼結体を用いた。磁気抵抗効果素子は
２層のＮｉ−Ｆｅ系合金からなるシールド層で挟んだ。
シールド層の厚さは１μｍとした。シールド層と磁気抵
抗効果素子とのギャップはＡｌ2Ｏ3で形成した。厚さは
０.２μｍである。なお、多層膜には永久磁石によるバ
イアス磁界を、磁界検出方向に印加した。Example 2 A magnetic head was manufactured using the magnetoresistive effect element of the present invention. Al 2 O 3 · Ti on the substrate
A sintered body containing C as a main component was used. The magnetoresistive effect element was sandwiched between two layers of shield layers made of a Ni—Fe alloy.
The thickness of the shield layer was 1 μm. The gap between the shield layer and the magnetoresistive effect element was made of Al 2 O 3 . The thickness is 0.2 μm. A bias magnetic field from a permanent magnet was applied to the multilayer film in the magnetic field detection direction.
【００１７】また、シールドと誘導型磁気ヘッドとのギ
ャップもＡｌ2Ｏ3で形成した。厚さは約４μｍである。
誘導型磁気ヘッドの磁極はＮｉ−Ｆｅ系合金で形成し
た。厚さは３.０μｍ である。一対の記録磁極間のギャ
ップもＡｌ2Ｏ3で形成した。厚さは０.４μｍ とした。
また、コイルには厚さ３μｍのＣｕを用いた。また、比
較例として、多層膜の代わりに厚さ４０ｎｍのＮｉ−Ｆ
ｅ系合金単層膜を用いた磁気ヘッドも作製した。The gap between the shield and the induction type magnetic head was also made of Al 2 O 3 . The thickness is about 4 μm.
The magnetic poles of the induction type magnetic head were made of a Ni-Fe alloy. The thickness is 3.0 μm. The gap between the pair of recording magnetic poles was also formed of Al 2 O 3 . The thickness was 0.4 μm.
Moreover, Cu having a thickness of 3 μm was used for the coil. In addition, as a comparative example, a Ni-F film having a thickness of 40 nm is used instead of the multilayer film.
A magnetic head using an e-based alloy single layer film was also manufactured.
【００１８】以上述べた構造の磁気ヘッドで記録再生を
行ったところ、Ｎｉ−Ｆｅ単層膜を用いた磁気ヘッドと
比較して、２.７ 倍高い再生出力を得た。これは、本発
明の磁気ヘッドに高磁気抵抗効果を示す多層膜を用いた
ためと考えられる。また、再生波形には、大きなノイズ
は見られなかった。これは、本発明の構造の効果と考え
られる。When recording / reproducing was performed with the magnetic head having the above-mentioned structure, a reproducing output 2.7 times higher than that of the magnetic head using the Ni--Fe single layer film was obtained. It is considered that this is because the magnetic head of the present invention uses a multilayer film having a high magnetoresistive effect. Also, no large noise was found in the reproduced waveform. This is considered to be an effect of the structure of the present invention.
【００１９】〈実施例３〉実施例２で述べた本発明の磁
気ヘッドを用い、磁気ディスク装置を作製した。装置の
概略図を図３に示す。磁気記録媒体７１には、残留磁束
密度０.７５Ｔ のＣｏ−Ｎｉ−Ｐｔ−Ｔａ系合金からな
る材料を用いた。磁気ヘッド７３のトラック幅は３μｍ
とした。磁気ヘッド７３における磁気抵抗効果素子は、
再生出力が高いため、信号処理に負担をかけない高性能
磁気ディスク装置が得られた。<Embodiment 3> Using the magnetic head of the present invention described in Embodiment 2, a magnetic disk device was manufactured. A schematic diagram of the device is shown in FIG. For the magnetic recording medium 71, a material made of a Co—Ni—Pt—Ta alloy having a residual magnetic flux density of 0.75T was used. The track width of the magnetic head 73 is 3 μm
And The magnetoresistive effect element in the magnetic head 73 is
Since the reproduction output is high, a high-performance magnetic disk device which does not burden the signal processing was obtained.
【００２０】[0020]
【発明の効果】磁性層と非磁性層とが交互に積層されて
いる多層膜、および上記多層膜に磁界を印加する磁路、
および一対の電極からなる磁気抵抗効果素子において、
磁路の幅を多層膜の長手方向の長さより狭くすることに
より、磁壁の多く発生する多層膜の端部の磁壁の移動を
抑え、また、一対の電極の幅を多層膜の長手方向の長さ
より狭くすることにより、磁壁の生じにくい多層膜の中
央部の電気抵抗率の変化を検出する。これらの結果、多
層膜を用いた磁気抵抗効果素子のバルクハウゼンノイズ
が抑制された。また、上述のような構造のため、磁気抵
抗効果素子が直接磁気記録媒体に接触せず、加熱による
ノイズを発生しない。また、磁気抵抗効果素子は磁気ヘ
ッドなどに好適であり、また、磁気ヘッドを用いること
により、高性能磁気記録再生装置を得ることができる。A multilayer film in which magnetic layers and non-magnetic layers are alternately laminated, and a magnetic path for applying a magnetic field to the multilayer film,
And a magnetoresistive effect element including a pair of electrodes,
By making the width of the magnetic path narrower than the length of the multilayer film in the longitudinal direction, the movement of the magnetic domain wall at the end of the multilayer film where a large number of domain walls are generated is suppressed, and the width of the pair of electrodes is set to the longitudinal direction of the multilayer film. By making the width narrower than this, the change in the electrical resistivity of the central portion of the multilayer film in which the domain wall is less likely to occur is detected. As a result, Barkhausen noise of the magnetoresistive effect element using the multilayer film was suppressed. Further, because of the structure as described above, the magnetoresistive effect element does not directly contact the magnetic recording medium, and noise due to heating does not occur. Further, the magnetoresistive effect element is suitable for a magnetic head and the like, and by using the magnetic head, a high performance magnetic recording / reproducing apparatus can be obtained.
【図１】本発明の磁気抵抗効果素子の構造の平面図。FIG. 1 is a plan view of the structure of a magnetoresistive effect element according to the present invention.
【図２】本発明の磁気抵抗効果素子に用いた多層膜の構
造を示す断面図。FIG. 2 is a cross-sectional view showing the structure of a multilayer film used in the magnetoresistive effect element of the present invention.
【図３】本発明の磁気記録再生装置の説明図。FIG. 3 is an explanatory diagram of a magnetic recording / reproducing apparatus of the present invention.
１１…多層膜、１２…磁路、１３…磁束の方向、１４…
電極。11 ... Multilayer film, 12 ... Magnetic path, 13 ... Direction of magnetic flux, 14 ...
electrode.
Claims (4)
る多層膜、および上記多層膜に磁界を印加する磁路、お
よび一対の電極からなる磁気抵抗効果素子において、上
記多層膜の長手方向が磁路に流れる磁束の方向と直角を
なし、上記一対の電極から上記多層膜に流れるセンス電
流の方向が磁路に流れる磁束の方向と平行であり、上記
磁路の幅が上記多層膜の長手方向の長さより狭く、上記
一対の電極の幅が上記多層膜の長手方向の長さより狭い
ことを特徴とする磁気抵抗効果素子。1. A magnetoresistive effect element comprising a multilayer film in which magnetic layers and nonmagnetic layers are alternately laminated, a magnetic path for applying a magnetic field to the multilayer film, and a pair of electrodes. The longitudinal direction is perpendicular to the direction of the magnetic flux flowing in the magnetic path, the direction of the sense current flowing from the pair of electrodes to the multilayer film is parallel to the direction of the magnetic flux flowing in the magnetic path, and the width of the magnetic path is the multilayer. A magnetoresistive effect element, characterized in that it is narrower than the length of the film in the longitudinal direction, and the width of the pair of electrodes is narrower than the length of the multilayer film in the longitudinal direction.
シールド層からなる磁気抵抗効果型ヘッド。2. A magnetoresistive head comprising the magnetoresistive element according to claim 1 and a shield layer.
ドと誘導型磁気ヘッドを組み合わせた複合型磁気ヘッ
ド。3. A composite magnetic head in which the magnetoresistive head according to claim 2 and an inductive magnetic head are combined.
ヘッドを用いた磁気記録再生装置。4. A magnetic recording / reproducing apparatus using the magnetic head according to claim 2 or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13763295A JPH08329424A (en) | 1995-06-05 | 1995-06-05 | Magnetoresistive head and magnetic recording / reproducing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13763295A JPH08329424A (en) | 1995-06-05 | 1995-06-05 | Magnetoresistive head and magnetic recording / reproducing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08329424A true JPH08329424A (en) | 1996-12-13 |
Family
ID=15203189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13763295A Pending JPH08329424A (en) | 1995-06-05 | 1995-06-05 | Magnetoresistive head and magnetic recording / reproducing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08329424A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000096230A (en) * | 1998-05-21 | 2000-04-04 | Internatl Business Mach Corp <Ibm> | Double chamber deposition system and production of magnetic reluctance sensor |
-
1995
- 1995-06-05 JP JP13763295A patent/JPH08329424A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000096230A (en) * | 1998-05-21 | 2000-04-04 | Internatl Business Mach Corp <Ibm> | Double chamber deposition system and production of magnetic reluctance sensor |
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