JP3096589B2 - Magnetoresistive head - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive head for converting a magnetic signal into an electric signal by a magnetoresistive effect, and more particularly to a small and large-capacity magnetic recording device such as a magnetic disk device. The present invention relates to a magneto-resistive head used in the present invention.

[0002]

2. Description of the Related Art A magnetoresistive head has attracted attention as a reproducing head for a magnetic disk device or the like, but has a problem that Barkhausen noise is generated due to domain wall movement in a magnetoresistive film. As means for solving this problem, Japanese Patent Publication No. 60-32330 discloses that
It is disclosed that an antiferromagnetic film is formed on a magnetoresistive film. According to this means, the exchange coupling between the magnetoresistive film and the antiferromagnetic film causes the magnetoresistive film to become a single magnetic domain, thereby reducing Barkhausen noise. However, if the exchange coupling is too strong, the reproduction sensitivity decreases. The problem arises.

On the other hand, JP-A-5-135331 discloses a technique for controlling the strength of the exchange coupling.
A configuration in which a ferromagnetic film is provided between a magnetoresistive film and an antiferromagnetic film is disclosed. According to this configuration, the value of the exchange coupling magnetic field that quantitatively indicates the strength of the exchange coupling can be set to 10 Oe or less, and a decrease in reproduction sensitivity can be suppressed. According to the embodiment, the thickness of the ferromagnetic film for controlling the exchange coupling needs to be 50 to 500 °, the distance between the magnetoresistive film and the shield layer becomes large, and the short-wavelength signal There is a problem that the reproduction resolution is reduced.

In the embodiment described in the publication, an alloy obtained by adding Nb to a NiFe alloy is used as a material of the ferromagnetic film for controlling exchange coupling. In order to reduce the exchange coupling magnetic field without increasing the thickness, it is necessary to increase the concentration of Nb. However,
When the concentration of Nb is increased, the crystal structure of the NiFeNb alloy film is disturbed, and the disturbance of the crystal structure causes a problem that the control of the exchange coupling magnetic field becomes unstable.

[0005]

SUMMARY OF THE INVENTION The present invention is to clarify the configuration of a magnetoresistive head in which the generation of Barkhausen noise is suppressed without lowering the reproduction sensitivity and reproduction resolution.

[0006]

A magnetoresistive head according to the present invention has a magnetoresistive film for converting a magnetic signal into an electric signal by a magnetoresistive effect, and a longitudinal direction of the magnetoresistive film. In a magnetoresistive head including a pair of electrodes for passing a current for signal detection, a first magnetic domain control layer is provided in contact with the magnetoresistive film, and the first magnetic domain control layer is A paramagnetic film is provided in contact with the magnetoresistive film, and an antiferromagnetic film is provided in contact with the paramagnetic film.

The material of the magnetoresistive film used in the present invention is not particularly limited as long as it is a soft magnetic material having a magnetoresistive effect, and NiFe alloys, CoFe alloys, NiCo alloys and the like can be used. Further, a multilayer film in which films made of these alloys are stacked may be used.

In the present invention, the material of the antiferromagnetic film constituting the first magnetic domain control layer is not particularly limited as long as it can provide an exchange coupling magnetic field to the magnetoresistance effect film. Instead, an FeMn alloy, an alloy obtained by adding a third element such as Pd, Pt, Ir, or Er to an FeMn alloy, a NiMn alloy, a CrAl alloy, NiO, or the like can be used.

In the present invention, the material of the paramagnetic film constituting the first magnetic domain control layer is not particularly limited as long as it exhibits paramagnetism at room temperature. Preferably, it has the same crystal structure as the antiferromagnetic film. That is, a NiFe alloy film is used as the magnetoresistive film, and γ-F is used as the antiferromagnetic film.
When an eMn alloy film is used, since these crystal structures are face-centered cubic, it is preferable that the paramagnetic film is also face-centered cubic. Also, the lattice constant of the paramagnetic film is preferably close to the lattice constant of the magnetoresistive film or the antiferromagnetic film, and the difference is within ± 20%, more preferably ± 10%. I do. As a material of such a paramagnetic film, a NiCu alloy is given. The thickness of the paramagnetic film is appropriately selected depending on the material and thickness of the magnetoresistive film and the antiferromagnetic film. The thickness of the magnetoresistive film made of a NiFe alloy is 100 to 400 °, and FeMn.
When the thickness of the antiferromagnetic film made of the alloy is 75 to 250 °, the thickness of the paramagnetic film made of the NiCu alloy is 50 °.
{Preferably, more preferably 10}
The following is assumed.

In one preferred embodiment according to the present invention, a second magnetic domain control layer is provided at a position separated by a predetermined distance from the side surfaces at both ends in the longitudinal direction of the magnetoresistive film.

The second magnetic domain control layer is preferably made of a soft magnetic material having a larger uniaxial anisotropy than the magnetoresistive film. Examples of such a soft magnetic film include a CoZr-based amorphous alloy.

The distance between the magnetoresistive film and the second magnetic domain control layer is preferably 4 μm or less, and the side surface of the second magnetic domain control layer faces the entire side surface of the magnetoresistive film. It is preferable to form it.

[0013]

According to the structure of the present invention, the exchange coupling strength is sufficiently controlled even if the thickness of the paramagnetic film constituting the first magnetic domain control layer is small, and the gap length between the shields does not increase. Therefore, the reproduction resolution does not decrease. Further, since the paramagnetic film has a stable crystal structure, control of exchange coupling does not become unstable.

On the other hand, the second magnetic domain control layer is magnetostatically coupled to the magnetoresistive film, and a return magnetic domain is easily formed in the second magnetic domain control layer. Even if the exchange coupling magnetic field is reduced by disposing the paramagnetic film,
The generation of the return magnetic domain at the end of the magnetoresistive film is suppressed. Further, since the magnetoresistive film is separated from the second magnetic domain control layer, the movement of the domain wall in the second magnetic domain control layer does not adversely affect the magnetoresistive film when reproducing a signal. Therefore, Barkhausen noise can be reduced without lowering the reproduction sensitivity.

[0015]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 3 is a perspective view showing a magnetoresistive head according to an embodiment of the present invention. Referring to FIG.
Lower shield layer 1 of iFe alloy (1 μm thick)
Is, A1 ₂ O ₃ substrate made of -TiC (not shown) insulating layer made of A1 ₂ O ₃ on: are formed through the (thickness 10μm not shown). On the lower shield layer 1, A
A lower insulating layer (thickness: 0.2 μm; not shown) made of ₁₂ O ₃ is formed, and a magnetoresistive element portion including a magnetoresistive film and a first magnetic domain control layer is formed on the lower insulating layer. 10
Are formed. A pair of electrodes 2 and 3 (M) are formed on the magnetoresistive element 10 at a distance corresponding to the track width.
o / Au / Mo three-layer film: 200 膜厚 / 1000Å /
200 °) is provided. On the electrodes 2 and 3 and the magnetoresistive element portion 10 between the electrodes, a chaton film 4 (film thickness: 80 °) made of Mo is formed. Shaton film 4
On top of this, an upper insulating layer made of A1 ₂ O ₃ (having a thickness of 0.15
.mu.m: not shown), and an upper shield layer 5 (1 .mu.m thick) made of a NiFe alloy on the upper insulating layer.
Are formed.

Each of the layers constituting the magnetoresistive head is formed on the substrate 1 in sequence by a sputtering method or the like, and is formed into a predetermined planar shape by an etching method or the like.

Lower shield layer 1 and upper shield layer 5
Is provided to prevent an external magnetic field other than a signal magnetic field from being mixed into the magnetoresistive effect element portion 10 and to improve the reproduction resolution. And the like, and the film thickness is generally 1 to 3 μm.

The electrodes 2 and 3 are provided to allow a current for signal detection to flow through the magnetoresistive film of the magnetoresistive element portion 10, and generally have a thickness of 1000 to 2000 °.

The chaton film 4 has a magnetoresistive effect element portion 10.
Is provided to apply a bias magnetic field to
As the material, Ti, Nb, Ta,
W or the like is used, and the film thickness is generally 80 to 1000 °.

FIG. 1 shows the magnetoresistive element portion 1 shown in FIG.
0 is a sectional view. Referring to FIG. 1, a magnetoresistive element unit 10 is configured by laminating an antiferromagnetic film 13 on a magnetoresistive film 11 via a paramagnetic film 12. In this embodiment, the material of the magnetoresistive effect film is Ni.
An Fe alloy is used and its film thickness is 300 °. Further, a γ-FeMn alloy is used as a material of the antiferromagnetic film 13 and its thickness is set to 150 °. In addition, the paramagnetic film 1
2 is made of a NiCu alloy, and its film thickness is set to 10 °.
And The magnetoresistive element section 10 is shaped into a 150 × 5 μm plane by etching.

Ni used as the magnetoresistive film 11
The Fe alloy has a face-centered cubic crystal structure (hereinafter abbreviated as fcc structure), and has a lattice constant of about 3.55 °. The γ-FeMn alloy used as the antiferromagnetic film 13 is also fc.
It has a c-structure and a lattice constant of about 3.60 °. Also,
The NiCu alloy used as the paramagnetic film 12 also has an fcc structure, and its lattice constant is about 3.85 °. That is, the magnetoresistance effect film 11, the antiferromagnetic film 13, and the paramagnetic film 1
2 has the same kind of crystal structure, and its lattice constant values are also very close to each other. The NiCu alloy has a Ni content of about 4
It becomes a paramagnetic material having a Curie point of 20 ° C. or less in a composition range of 0 to 70 atomic%.

FIG. 7 shows a resistance-magnetic field curve (hereinafter abbreviated as MR curve) for the magnetoresistive head having the magnetoresistive element portion as shown in FIG. FIG. 8 shows a magneto-resistance effect element as shown in FIG.
A magnetoresistive effect of a comparative example manufactured by using only the magnetoresistive film 11 as the magnetoresistive element without forming the paramagnetic film 12 and the antiferromagnetic film 13 and otherwise manufacturing the same as the embodiment shown in FIG. 3 shows an MR curve for a mold head. As can be seen from a comparison between FIG. 7 and FIG. 8, the provision of the paramagnetic film and the antiferromagnetic film on the magnetoresistive film makes the MR curve smooth and makes Barkhausen noise less likely to occur.

Here, the exchange coupling magnetic field applied to the magnetoresistive film in the magnetoresistive element of the above embodiment was measured and found to be 4 Oe. The same magnetoresistive element as in the above example was fabricated except that the thickness of the paramagnetic film was reduced from 10 ° to 5 °, and the exchange coupling magnetic field at that time was measured to be 7 Oe. Further, as a comparative example, a magnetoresistive element having an antiferromagnetic film formed directly on the magnetoresistive film without providing a paramagnetic film was manufactured, and the exchange coupling magnetic field at that time was measured. These results are summarized in Table 1.

[0025]

[Table 1]

As can be seen from Table 1, by providing a paramagnetic film between the magnetoresistive film and the antiferromagnetic film, the exchange coupling magnetic field is reduced and the reproduction sensitivity is improved.

FIG. 2 is a sectional view showing a magnetoresistive element section 10 in another embodiment according to the present invention. Referring to FIG. 2, in this embodiment, a magnetoresistive element portion 10 is formed by sequentially forming a magnetoresistive film 11, a paramagnetic film 12, and an antiferromagnetic film 13 on a base film 14. I have. As a material of the base film 14, Ta, Nb, Mo, T
metals such as i or alloys containing them as main components, Si
₃ N ₄ insulator such like can be used. By forming the magnetoresistive film 11 on such a base film 14, the crystal structure of the magnetoresistive film 11 is stabilized, and the crystal structures of the paramagnetic film 12 and the antiferromagnetic film 13 thereon are also stabilized. In addition, the exchange coupling is further stabilized.

Here, a magnetoresistive element was manufactured in the same manner as in the embodiment shown in Table 1 except that a magnetoresistive element having a base film as shown in FIG. 2 was used. Table 2 shows the results of measuring the magnetic field. As for the base film, a Mo film having a thickness of 30 ° and a film having a thickness of 100 ° were used.
Using the Ti film was manufactured. Paramagnetic films having a thickness of 10 mm and a thickness of 5 mm were produced.

[0029]

[Table 2]

As can be seen by comparing Tables 1 and 2, the exchange coupling magnetic field is slightly increased in the magnetoresistive effect element portion having the underlayer. It means that the crystal structures of the film, paramagnetic film and antiferromagnetic film are stabilized, and exchange coupling is stabilized.

In the above embodiment, as shown in FIG. 4, the magnetoresistive element portion 10 in which the paramagnetic film 12 and the antiferromagnetic film 13 are formed in contact with the entire upper surface of the magnetoresistive effect film 11 is shown. The present invention is not limited to such a structure. As shown in FIG. 5, the magnetoresistive element portion 10 in which the paramagnetic film 12 and the antiferromagnetic film 13 are formed only on the portion except the track portion is used. May be used. Further, as shown in FIG. 6, a magnetoresistive element portion 10 in which a paramagnetic film 12 and an antiferromagnetic film 13 are formed only in a track portion may be used.

FIG. 9 is a sectional view showing still another example of the structure of the magnetoresistive element section 10 used in the present invention. Referring to FIG. 9, a magnetoresistive element section 10 includes a magnetoresistive film 1 on an antiferromagnetic film 13 via a paramagnetic film 12.
1 are laminated. In this embodiment, a NiFe alloy is used as the magnetoresistive film 11 and its thickness is set to 250 °. The antiferromagnetic film 13 is made of NiO and has a thickness of 300 °. Further, a NiCu alloy is used as the paramagnetic film 12, and its thickness is set to 50 °. When the exchange coupling magnetic field in this example was measured, it was 2 Oe. Further, in this example, when the thickness of the NiCu film was changed in the range of 10 to 80 °, the exchange coupling magnetic field changed in the range of 9 to 1 Oe, and the exchange coupling magnetic field could be controlled by controlling the film thickness. confirmed.

In the embodiment shown in FIG.
Similar results were obtained when a CrAl alloy having a thickness of 300 ° was used instead of NiO for No. 3.

FIG. 10 is a sectional view showing a magnetoresistive head according to still another embodiment of the present invention. In the magnetic effect type head of this embodiment, a pair of second magnetic domain control layers 25 and 26 are provided. Referring to FIG.
On the substrate 33, an insulating layer 32, a lower shield layer 29 and an insulating layer 31 are sequentially formed. On the insulating layer 31, the magnetoresistive element section 20 is formed. The magnetoresistive element section 20 includes a magnetoresistive film 21 made of a NiFe alloy, a paramagnetic film 22 made of a NiCu alloy, and a γ-
The antiferromagnetic film 23 is made of an FeMn alloy. This magnetoresistive element section 20 is substantially the same as the magnetoresistive element section 10 shown in FIG. The magnetoresistive film 21 has uniaxial anisotropy with the longitudinal direction as the axis of easy magnetization, and the uniaxial anisotropic magnetic field is 6 Oe.

On the magnetoresistive element portion 21, a chaton layer 24 made of Mo is formed. On the insulating layer 31 which is separated from the side surfaces at both longitudinal ends of the magnetoresistive effect film 21 by a distance l. Second magnetic domain control layers 25 and 26 made of a soft magnetic material having a high saturation magnetic flux density and a large uniaxial anisotropic magnetic field are formed. In this embodiment, the second magnetic domain control layer 2
A CoZrSn amorphous alloy is used as the material for Nos. 5 and 26. In this case, the second magnetic domain control layers 25, 2
6, the uniaxial anisotropic magnetic field is 17 Oe.
Larger than the uniaxial anisotropic magnetic field of the second magnetic domain control layer 2
The maximum resistance change rate (hereinafter abbreviated as MR ratio) of each of the magnetoresistive films 5 and 26 is 0.1% or less, which is 1% smaller than the MR ratio of the magnetoresistive film 21.
Digit to two digits smaller.

On both sides of the shunt layer 24, a pair of electrodes 27 and 28 are formed. The electrode 28 covers the second magnetic domain control layer 2 so that the electrode 27 covers the second magnetic domain control layer 25.
6 is formed. The space between the electrode 27 and the electrode 28 is a track portion.

FIG. 11 is a perspective view showing the magnetic domain resistance effect type head of the embodiment shown in FIG. As shown in FIG. 11, an upper shield layer 30 is provided on the electrode layers 27 and 28 via an insulating layer (not shown). In FIG. 11, the insulating layers on the second magnetic domain control layers 25 and 26 and the lower shield layer 29 are not shown.

FIG. 12 is a plan view showing the results of observing the magnetic domain structure of the magnetoresistive film 21 and the magnetic domain control layers 25 and 26 of the embodiment shown in FIG. 10 by the Bitter method. FIG.
As shown in FIG. 2, there is no domain wall in the magnetoresistive film 21, and the magnetoresistive film 21 has a single magnetic domain. on the other hand,
Domain walls 45 and 46 are generated in the second magnetic domain control layers 25 and 26, respectively. This is because the second magnetic domain control layers 25, 2
6 is made of a material having a large domain wall energy. When reproducing signals as a magnetoresistive head, the domain walls 45 and 46 in the second magnetic domain control layers 25 and 26 are used.
Move under the influence of the signal magnetic field. However, since the magnetoresistive effect element 21 is separated from the second magnetic domain control layers 25 and 26, the movement of the domain walls 45 and 46 causes a new movement in the magnetoresistive effect element 21. No domain wall is generated, and no Barkhausen noise is generated.

FIG. 13 is a plan view showing the magnetic domain structure of the magnetoresistive effect film when the second magnetic domain control layer is not provided. In such a case, the domain wall 4 is formed in the magnetoresistive effect film 11.
1 is easily generated, and the magnetic domain wall 41 easily moves under the influence of a signal magnetic field when reproducing a signal as a magnetoresistive head, and Barkhausen noise is easily generated.

As can be seen from the above, by providing the second magnetic domain control layer, the generation of Barkhausen noise can be further suppressed.

FIG. 14 shows the magnetoresistive film 2 shown in FIG.
FIG. 3 is a diagram showing a relationship between a distance 1 between a first magnetic domain control layer 25 and a second magnetic domain control layer 25 and the occurrence state of Barkhausen noise. 14, the vertical axis indicates the size of the magnetic domain generated at the end of the magnetic domain resistance effect film, that is, m shown in FIG.

As can be seen from FIG. 14, when the distance 1 between the magnetoresistive film and the second magnetic domain control layer is 2 μm or less, no domain wall is generated in the magnetoresistive film, and the magnetoresistive film is simply formed. It becomes a magnetic domain structure. When the distance 1 is 4 μm or less, the size m of the magnetic domain is 5 μm or less, and no Barkhausen noise occurs.

FIGS. 15A and 15B show MR curves of various magnetoresistive heads. FIG. 15A shows the magnetoresistive head of the embodiment shown in FIG. 10 (hereinafter abbreviated as MR head [A]). (B) shows a magnetoresistive head (hereinafter referred to as an MR head [B]) including a magnetoresistive element having no first magnetic domain control layer and second magnetic domain control layer. ])
(C) shows a magnetoresistive head (hereinafter referred to as a magnetoresistive effect head) including a magnetoresistive element portion provided with an antiferromagnetic film in contact with the magnetoresistive film and having no paramagnetic film and the second magnetic domain control layer , MR head [C]). The exchange coupling magnetic field in the MR head [C] is 20 Oe.
That is all.

As can be seen from FIG. 15, the MR head [B] has a large MR ratio and is excellent in reproduction sensitivity, but generates Barkhausen noise. The MR head [C] is excellent in that Barkhausen noise does not occur, but disadvantageous in reproduction sensitivity because the MR ratio is small and the optimum bias magnetic field is large. On the other hand, in the MR head [A] of the embodiment of the present invention, Barkhausen noise does not occur, the MR ratio is large, and the optimum bias magnetic field is small.

FIGS. 16 to 18 are plan views showing examples of the relative arrangement of the magnetoresistive film and the second magnetic domain control layer and the planar shape of the second magnetic domain control layer in the present invention. The illustrated magnetoresistive film 21 and the second magnetic domain control layers 25, 2
The upper side of 6 faces the magnetic recording medium.

In the example shown in FIG.
And the second magnetic domain control layers 25 and 26 have substantially the same width. That is, the second magnetic domain control layers 25, 26 are provided with respect to the entire width of the side surfaces 21 a at both ends in the longitudinal direction of the magnetoresistive film 21.
Are facing each other.

In the example shown in FIG. 17, the second magnetic domain control layer 2
5 and 26 are wider than the magnetoresistive film 21 and the second magnetic domain control layers 25 and 26 project below the magnetoresistive film. Also in this structure, the magnetoresistance effect film 21
The side surfaces of the second magnetic domain control layers 25 and 26 are opposed to the entire width of the side surface 21a at both ends in the longitudinal direction.

In the example shown in FIG. 18, the second magnetic domain control layer 2
5 and 26 are wider than the magnetoresistive effect film 21, and the second magnetic domain control layers 25 and
26 project in the direction approaching each other. Also in this structure, the side surfaces 21 at both ends in the longitudinal direction of the magnetoresistive film 21
The side surfaces of the second magnetic domain control layers 25 and 26 are opposed to the entire width a.

FIGS. 19 and 20 are plan views showing an example of the relative arrangement of the magnetoresistive film and the second magnetic domain control layer and an undesired example of the planar shape of the second magnetic domain control layer. Magnetoresistive effect film 21 and second magnetic domain control layers 25, 2
The upper side of 6 faces the magnetic recording medium.

In the example shown in FIG. 19, the second magnetic domain control layer 2
The widths of 5 and 26 are smaller than the width of the magnetoresistive layer 21. In this case, the second magnetic domain control layers 25, 2
When there is a portion where the side surfaces of No. 6 do not face each other, the effect of the second magnetic domain control layer in the present invention is reduced.

In the example shown in FIG. 20, the second magnetic domain control layer 2
The side surfaces of 5, 26 are pointed, and also in this case, the effect of the second magnetic domain control layer in the present invention is reduced.

As can be seen from the above, in order to obtain the effect of the second magnetic domain control layer in the present invention, the second magnetic domain control layer is required to have the same width as the second magnetic domain control layer with respect to the entire width of the side surfaces 21a at both longitudinal ends. It is preferable that the side surfaces of the control layers 25 and 26 face each other.

In the above description, a shield type magnetoresistive head of the Chatton bias type is taken as an example. However, the present invention is not limited to this, and other types such as a soft bias type and a yoke type may be used. The present invention can also be applied to a system and model of a magnetoresistive head.

[0054]

According to the present invention, there is provided a magnetoresistive head in which the generation of Barkhausen noise is suppressed without lowering the reproduction sensitivity and the reproduction resolution.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a magnetoresistive element section in one embodiment according to the present invention.

FIG. 2 is a sectional view showing a magnetoresistive element section according to another embodiment according to the present invention.

FIG. 3 is a perspective view showing a magnetoresistive head of one embodiment according to the present invention.

FIG. 4 is a cross-sectional view showing an example of the structure of a magnetoresistive element used in the present invention.

FIG. 5 is a sectional view showing another example of the structure of the magnetoresistive element used in the present invention.

FIG. 6 is a sectional view showing still another example of the structure of the magnetoresistive element used in the present invention.

FIG. 7 is a diagram showing an MR curve in the magnetoresistive head of one embodiment according to the present invention.

FIG. 8 is a diagram showing an MR curve of a magnetoresistive head of a comparative example.

FIG. 9 is a sectional view showing still another example of the structure of the magnetoresistive element used in the present invention.

FIG. 10 is a sectional view showing a magnetoresistive head according to still another embodiment of the present invention.

FIG. 11 is a perspective view showing the magnetoresistive head of the embodiment shown in FIG. 10;

FIG. 12 is a plan view showing the magnetic domain structure of the magnetoresistive film in the embodiment shown in FIG.

FIG. 13 is a plan view showing a magnetic domain structure of a magnetoresistive film of a comparative example.

FIG. 14 is a view showing the relationship between the distance between the magnetoresistive film and the second magnetic domain control layer and the size of the magnetic domains.

FIG. 15 is a diagram showing a relationship between a bias magnetic field intensity and an MR ratio in a magnetoresistive head.

FIG. 16 is a plan view showing an example of the shape and arrangement of a magnetoresistive film and a second magnetic domain control layer according to the present invention.

FIG. 17 is a plan view showing another example of the shape and arrangement of the magnetoresistive film and the second magnetic domain control layer according to the present invention.

FIG. 18 is a plan view showing still another example of the shapes and arrangements of the magnetoresistive film and the second magnetic domain control layer according to the present invention.

FIG. 19 is a plan view showing shapes and arrangements of a magnetoresistance effect film and a second magnetic domain control layer in a comparative example.

FIG. 20 is a plan view showing shapes and arrangements of a magnetoresistive film and a second magnetic domain control layer in another comparative example.

[Explanation of symbols]

 2, 3, 27, 28 Electrode 4, 24 Shunt layer 10, 20 Magnetoresistance effect element portion 11, 21 Magnetoresistance effect film 12, 22 Paramagnetic film 13, 23 Antiferromagnetic film 25, 26 Second magnetic domain control layer

Claims (8)

(57) [Claims] 1. A magnetoresistive film for converting a magnetic signal into an electric signal by a magnetoresistive effect, and a pair of electrodes for flowing a current for signal detection in a longitudinal direction of the magnetoresistive film. A first magnetic domain control layer provided in contact with the magnetoresistive film; a paramagnetic film provided with the first magnetic domain control layer in contact with the magnetoresistive film; A magnetoresistive head comprising: an antiferromagnetic film provided in contact with the paramagnetic film. 2. The magnetic device according to claim 1, wherein the magnetoresistance effect film, the first magnetic domain control layer, and the pair of electrodes are provided between a pair of shield layers. Resistance effect type head. 3. The magnetoresistance effect according to claim 1, wherein each of the magnetoresistance effect film, the antiferromagnetic film and the paramagnetic film has a face-centered cubic crystal structure. Mold head. 4. The method according to claim 1, wherein the paramagnetic film is cured at a temperature of 20 ° C. or less.
2. The magnetoresistive head according to claim 1, wherein the head is made of a NiCu alloy having points. 5. The magnetoresistive device according to claim 1, wherein a second magnetic domain control layer is provided at a position separated by a predetermined distance from a side surface at both ends in a longitudinal direction of the magnetoresistive effect film. Effect type head. 6. The magnetoresistive head according to claim 5, wherein the second magnetic domain control layer is made of a soft magnetic material having a larger uniaxial anisotropic magnetic field than the magnetoresistive film. . 7. The magnetoresistive head according to claim 5, wherein a distance between the magnetoresistive film and the second magnetic domain control layer is 4 μm or less. 8. The magnetoresistive head according to claim 5, wherein the second magnetic domain control layer has side surfaces opposing the entire side surfaces at both ends of the magnetoresistive film.