JPH08213357A - Substrate cleaning method - Google Patents
Substrate cleaning methodInfo
- Publication number
- JPH08213357A JPH08213357A JP1767395A JP1767395A JPH08213357A JP H08213357 A JPH08213357 A JP H08213357A JP 1767395 A JP1767395 A JP 1767395A JP 1767395 A JP1767395 A JP 1767395A JP H08213357 A JPH08213357 A JP H08213357A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- substrate
- gas
- pressure
- substrate according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
(57)【要約】
【構成】洗浄処理用のガス圧を基板温度に対して飽和蒸
気圧以下とし、洗浄処理用のガスを基板上で凝縮させず
に基板表面の洗浄処理を行う。
【効果】パーティクルの発生がなく微細部でのエッチン
グ特性が良好となる。
(57) [Summary] [Constitution] The pressure of the cleaning gas is set to a saturated vapor pressure or less with respect to the substrate temperature, and the cleaning process is performed on the substrate surface without condensing the cleaning gas on the substrate. [Effect] Particles are not generated, and etching characteristics in a fine portion are improved.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板の洗浄処理方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of cleaning a substrate.
【０００２】[0002]
【従来の技術】半導体プロセスにおける洗浄技術は、従
来はウェット洗浄技術が主流であったが、洗浄液中のパ
ーティクルがウェハに付着する，ウェハ上にウォータマ
ークと呼ばれる生成物が形成される、また微細部の洗浄
には不適である等の問題があった。このため、近年ベー
パー洗浄技術が大気圧もしくは減圧下で検討されてい
る。2. Description of the Related Art Conventionally, as a cleaning technique in a semiconductor process, a wet cleaning technique has been mainly used. However, particles in a cleaning liquid adhere to the wafer, a product called a watermark is formed on the wafer, and fine particles are formed. There was a problem that it was not suitable for cleaning the part. Therefore, in recent years, vapor cleaning technology has been studied under atmospheric pressure or reduced pressure.
【０００３】大気圧によるベーパー洗浄は、例えば、特
開昭62−173720号公報に開示された技術によれば、シリ
コンウェハが収容された容器内へフッ酸の蒸気を供給し
てシリコンウェハ表面のシリコン自然酸化膜を除去し、
その後に、水蒸気でウェハ表面からフッ酸を洗い落して
から乾燥させる方法がある。また、特表昭62−502930号
公報に開示された技術によれば、シリコンウェハの表面
に無水フッ化水素ガスを水蒸気と共に供給し、ウェハ上
から酸化膜を除去する方法がある。According to the technique disclosed in Japanese Unexamined Patent Publication (Kokai) No. 62-173720, for example, vapor cleaning under atmospheric pressure is performed by supplying vapor of hydrofluoric acid into a container containing a silicon wafer to clean the surface of the silicon wafer. Silicon native oxide film is removed,
After that, there is a method in which hydrofluoric acid is washed off from the wafer surface with water vapor and then dried. Further, according to the technique disclosed in Japanese Patent Publication No. 62-502930, there is a method of supplying anhydrous hydrogen fluoride gas together with water vapor to the surface of a silicon wafer to remove an oxide film from the wafer.
【０００４】減圧によるベーパー洗浄には、例えば、特
表平4−502981 号公報に開示された技術がある。これに
よれば、シリコンウェハの表面にフッ化水素ガスを水蒸
気と共に供給し、比較的高圧（例えば３５０Torr）で洗
浄処理する方法が報告されている。For the vapor cleaning under reduced pressure, for example, there is a technique disclosed in Japanese Patent Publication No. 4-502981. According to this, a method of supplying hydrogen fluoride gas to the surface of a silicon wafer together with water vapor and performing a cleaning treatment at a relatively high pressure (for example, 350 Torr) is reported.
【０００５】これらの方法は、いずれもウェハ表面にＨ
Ｆ／Ｈ2Ｏ の薄い凝縮層を形成して、この凝縮層と酸化
膜との化学反応により酸化膜をエッチングしている。In all of these methods, H
A thin condensed layer of F / H 2 O is formed, and the oxide film is etched by the chemical reaction between the condensed layer and the oxide film.
【０００６】[0006]
【発明が解決しようとする課題】特開昭62−173720号公
報，特表昭62−502930号公報、及び特表平4−502981 号
公報に開示された技術によれば、洗浄処理時にウェハ表
面上でＨＦ／Ｈ2Ｏ の凝縮層が生じているために、基板
からシリコン酸化膜をエッチング除去する場合、エッチ
ング反応副生成物が基板表面から離脱せずにパーティク
ルとして残留しやすい問題がある。また、微細孔内部に
上記凝縮層の洗浄処理液が供給されないため、微細孔内
部でのエッチング特性が不十分であるという問題があ
る。According to the techniques disclosed in JP-A-62-173720, JP-A-62-502930, and JP-A-4-502981, the surface of the wafer during the cleaning process is disclosed. Since a condensed layer of HF / H 2 O is formed above, when the silicon oxide film is removed by etching from the substrate, there is a problem that etching reaction by-products are likely to remain as particles without being separated from the substrate surface. Further, since the cleaning treatment liquid for the condensed layer is not supplied inside the fine holes, there is a problem that the etching characteristics inside the fine holes are insufficient.
【０００７】本発明の目的は、パーティクル発生が少な
く、微細孔内部でのエッチング特性が良好となる基板の
洗浄方法を提供することにある。It is an object of the present invention to provide a method of cleaning a substrate in which generation of particles is small and etching characteristics inside the fine holes are good.
【０００８】[0008]
【課題を解決するための手段】洗浄処理用のガスを基板
に供給して基板表面の洗浄処理を行う方法において、洗
浄処理用のガス圧を基板温度に対して飽和蒸気圧以下と
し、洗浄処理用のガスを基板上で凝縮させずに洗浄処理
用のガスと酸化膜との表面反応により基板表面の洗浄処
理を行う。In a method of supplying a cleaning gas to a substrate and cleaning the surface of the substrate, the cleaning gas pressure is set to a saturated vapor pressure or less with respect to the substrate temperature. The substrate surface is cleaned by the surface reaction between the cleaning gas and the oxide film without condensing the cleaning gas on the substrate.
【０００９】[0009]
【作用】洗浄処理用のガスを基板上で凝縮させずに基板
表面の洗浄処理を行う場合、洗浄処理用のガスは一原子
層以下で基板表面に吸着し、エッチング反応を行う。こ
のため、エッチング反応の副生成物の基板表面からの離
脱が容易となり、従って残渣が少なくなる。また、微細
孔部内の表面にも凝縮することなく蒸気が供給されエッ
チング反応が行われるため、微細孔内部でのエッチング
特性が良好となる。When the cleaning process is performed on the substrate surface without condensing the cleaning process gas on the substrate, the cleaning process gas is adsorbed on the surface of the substrate in an atomic layer or less to cause an etching reaction. For this reason, the by-products of the etching reaction are easily separated from the substrate surface, and therefore the residue is reduced. In addition, since the etching reaction is performed by supplying the vapor to the surface inside the fine pores without condensing, the etching characteristics inside the fine pores are improved.
【００１０】[0010]
（実施例１）以下、本発明の実施例について説明する。
図２は、本発明を実施するための装置の一例を示すブロ
ック図である。洗浄室１０は、耐薬品性及び汚染防止の
ため炭化珪素で形成されている。洗浄室１０の上部には
導入口１１、下部には排気口１２が設けられている。導
入口１１は、テフロン管２０により洗浄処理液気化器２
１及びマスフローコントローラ２２と接続され、マスフ
ローコントローラ２２には窒素等の不活性ガスが導入さ
れるようになっている。洗浄室１０の内部には、ガスの
流入方向と垂直になるようにウェハ３０が配置され、ウ
ェハ３０の温度はウェハ支持台（図示せず）内に循環水
を通すことにより制御される。また、ウェハ表面観察用
の石英窓４０が設けられている。Example 1 An example of the present invention will be described below.
FIG. 2 is a block diagram showing an example of an apparatus for implementing the present invention. Cleaning chamber 10 is made of silicon carbide for chemical resistance and prevention of contamination. An inlet 11 is provided in the upper part of the cleaning chamber 10, and an exhaust port 12 is provided in the lower part. The inlet 11 is provided with a Teflon tube 20 for cleaning treatment liquid vaporizer 2
1 and the mass flow controller 22, and an inert gas such as nitrogen is introduced into the mass flow controller 22. A wafer 30 is arranged inside the cleaning chamber 10 so as to be perpendicular to the gas inflow direction, and the temperature of the wafer 30 is controlled by passing circulating water through a wafer support (not shown). Further, a quartz window 40 for observing the wafer surface is provided.
【００１１】このように構成された装置を用いて、洗浄
室内圧力を減圧下でウェハの洗浄処理を行った。フッ化
水素及び水蒸気の圧力は全圧もしくは洗浄処理液気化器
温度を調整することにより、任意に設定できる。本実施
例では、基板温度は室温（２０℃），３０℃とした。Using the apparatus thus configured, the wafer cleaning process was performed under a reduced pressure in the cleaning chamber. The pressures of hydrogen fluoride and water vapor can be arbitrarily set by adjusting the total pressure or the temperature of the cleaning treatment liquid vaporizer. In this example, the substrate temperature was room temperature (20 ° C.) and 30 ° C.
【００１２】石英窓４０からウェハ表面を観察すること
により、図１に示すように、洗浄処理液の凝縮層の有無
はウェハ表面に干渉縞が観察される領域と，観察されな
い領域（斜線部分）として分けられた。観察により分け
られる領域の境界となる代表的な実験値を図中の丸印
（○）により示す。上記における凝縮領域（例えば、Ｐ
Ｈ2Ｏ＝５５Torr，ＰＨＦ＝０.９Torr，全圧＝５００To
rr），非凝縮領域（例えば、ＰＨ2Ｏ＝１２Torr，ＰＨ
Ｆ＝０.５Torr，全圧＝８０Torr）の圧力において、洗
浄処理（シリコン酸化膜５００Åエッチング）前後のシ
リコンウェハ上のパーティクル(０.３μｍ以上）の個数
を調べた。これより凝縮層領域でのパーティクル発生数
は数百〜数千のレベルであった。本発明の非凝縮層領域
でのパーティクル発生数は十個以下であった。By observing the surface of the wafer through the quartz window 40, as shown in FIG. 1, the presence or absence of the condensed layer of the cleaning treatment liquid is observed in the area where interference fringes are observed and in the area where it is not observed (hatched portion). Was divided as A representative experimental value, which is the boundary of the region divided by observation, is indicated by a circle (○) in the figure. The condensation region in the above (eg, P
H 2 O = 55 Torr, PHF = 0.9 Torr, Total pressure = 500 Torr
rr), non-condensing region (eg, PH 2 O = 12 Torr, PH
At a pressure of F = 0.5 Torr and total pressure = 80 Torr, the number of particles (0.3 μm or more) on the silicon wafer before and after the cleaning treatment (silicon oxide film 500Å etching) was examined. As a result, the number of particles generated in the condensed layer region was on the level of several hundreds to several thousands. The number of particles generated in the non-condensed layer region of the present invention was 10 or less.
【００１３】また、直径０.５μｍ ，深さ２μｍのコン
タクトホールをシリコン熱酸化膜に形成した。本発明の
非凝縮条件下ではホール底部でも均一にエッチングされ
微細部でのエッチング特性が均一であるのに対し、従来
条件（凝縮条件）下ではホール底面に近い程エッチング
されにくく、不均一なエッチング形状となった。A contact hole having a diameter of 0.5 μm and a depth of 2 μm was formed in the silicon thermal oxide film. Under the non-condensing condition of the present invention, the bottom part of the hole is uniformly etched and the etching characteristics in the fine part are uniform. Became the shape.
【００１４】このように、本発明の実施例１によれば、
図１の斜線部で示された実験条件下でシリコン酸化膜の
エッチングを行った所、パーティクルをほとんど発生さ
せることなく酸化膜のエッチングを行うことができた。
また、微細部でのエッチング特性も良好であった。As described above, according to the first embodiment of the present invention,
When the silicon oxide film was etched under the experimental conditions shown by the shaded area in FIG. 1, the oxide film could be etched with almost no particles generated.
Further, the etching characteristics in the fine portion were also good.
【００１５】また、実施例１の効果は、洗浄処理用のガ
スがフッ化水素蒸気及びアルコールの混合蒸気であるこ
とを特徴とする基板の洗浄処理方法にも有効であった。Further, the effect of Example 1 was also effective in the method of cleaning a substrate, characterized in that the cleaning gas was a mixed vapor of hydrogen fluoride vapor and alcohol.
【００１６】さらに、実施例１の効果は、洗浄処理用の
ガスが塩化水素，三塩化ホウ素などのハロゲン化物であ
ることを特徴とする基板の洗浄処理方法にも有効であっ
た。Furthermore, the effect of Example 1 was also effective in a substrate cleaning treatment method characterized in that the cleaning treatment gas was a halide such as hydrogen chloride or boron trichloride.
【００１７】（実施例２）図２に示すように構成された
装置を用いて、洗浄室内圧力を大気圧下で基板の洗浄処
理を行った。フッ化水素及び水蒸気の圧力は導入する希
釈ガスとしての窒素量を調整することにより、任意に設
定できた。また、基板温度を室温(２０℃)とした。(Embodiment 2) Using the apparatus configured as shown in FIG. 2, the substrate cleaning process was performed under the pressure of the cleaning chamber under atmospheric pressure. The pressures of hydrogen fluoride and water vapor could be arbitrarily set by adjusting the amount of nitrogen as a diluent gas to be introduced. The substrate temperature was room temperature (20 ° C.).
【００１８】石英窓４０からウェハ表面を観察すること
により、図１に示すように、洗浄処理液の凝縮層の有無
はウェハ表面に干渉縞が観察される領域と，観察されな
い領域（斜線部分）として分けられた。By observing the wafer surface through the quartz window 40, as shown in FIG. 1, the presence or absence of the condensed layer of the cleaning treatment liquid is observed in the area where interference fringes are observed and in the area where it is not observed (hatched portion). Was divided as
【００１９】凝縮領域（例えば、ＰＨ2Ｏ＝８３Torr，
ＰＨＦ＝４.１Torr，全圧＝７６０Torr），非凝縮領域
（例えば、ＰＨ2Ｏ＝１４Torr，ＰＨＦ＝０.２Torr，全
圧＝７６０Torr）の圧力において、洗浄処理（シリコン
酸化膜５００Åエッチング）前後のシリコンウェハ上の
パーティクル(０.３μｍ以上）の個数を調べた。これよ
り凝縮層領域でのパーティクル発生数は数百〜数千のレ
ベルであった。本発明の非凝縮層領域でのパーティクル
発生数は１０個以下であった。Condensation region (eg PH 2 O = 83 Torr,
PHF = 4.1 Torr, total pressure = 760 Torr), non-condensing region (for example, PH 2 O = 14 Torr, PHF = 0.2 Torr, total pressure = 760 Torr) before and after the cleaning process (silicon oxide film 500 Å etching). The number of particles (0.3 μm or more) on the silicon wafer was examined. As a result, the number of particles generated in the condensed layer region was on the level of several hundreds to several thousands. The number of particles generated in the non-condensed layer region of the present invention was 10 or less.
【００２０】実施例２の効果は、基板温度を上昇させ、
例えば３０℃に制御した場合でも基板温度が室温の場合
と同様の効果が得られ、利用可能圧力範囲が拡大した。The effect of the second embodiment is to raise the substrate temperature,
For example, even when the temperature was controlled to 30 ° C., the same effect as when the substrate temperature was room temperature was obtained, and the usable pressure range was expanded.
【００２１】このように、本発明の実施例２によれば、
洗浄室内圧力を大気圧下でパーティクルをほとんど発生
させることなく酸化膜のエッチングを行うことができ
た。As described above, according to the second embodiment of the present invention,
The oxide film could be etched under the pressure of the cleaning chamber at atmospheric pressure with almost no particles generated.
【００２２】（実施例３）図２に示すように構成された
装置を用いて、基板の洗浄処理を行った場合のエッチン
グ特性の実施例を示す。本発明の非凝縮領域条件であ
る、ＰＨ2Ｏ＝１２Torr，ＰＨＦ＝０.５Torr，全圧＝８
０Torr の圧力において、エッチング時間とエッチング
量の関係を調べた。基板温度は室温（２０℃）とした。
図３に示すように、極めてエッチング速度の制御性が良
いことが分かった。(Embodiment 3) An embodiment of etching characteristics when a substrate is cleaned by using the apparatus configured as shown in FIG. PH 2 O = 12 Torr, PHF = 0.5 Torr, total pressure = 8, which are the non-condensing region conditions of the present invention.
The relationship between the etching time and the etching amount was examined at a pressure of 0 Torr. The substrate temperature was room temperature (20 ° C.).
As shown in FIG. 3, it was found that the controllability of the etching rate was extremely good.
【００２３】このように実施例３によれば、本発明の非
凝縮領域では極めてエッチング速度の制御性が良好であ
った。As described above, according to Example 3, the controllability of the etching rate was very good in the non-condensing region of the present invention.
【００２４】[0024]
【発明の効果】洗浄処理用のガスをウェハ基板に供給し
て、洗浄処理用のガスをウェハ基板上で凝縮させない条
件下で基板表面の洗浄処理を行う本発明によれば、パー
ティクルを発生させることなく酸化膜のエッチングを行
うことができる。また、微細加工性も良好となる。According to the present invention, the cleaning gas is supplied to the wafer substrate to clean the substrate surface under the condition that the cleaning gas is not condensed on the wafer substrate. The etching of the oxide film can be performed without the need. In addition, fine workability is also improved.
【図１】本発明の洗浄処理条件の圧力領域を示す特性
図。FIG. 1 is a characteristic diagram showing a pressure region of a cleaning treatment condition of the present invention.
【図２】本発明の実施例に係るベーパー洗浄装置のブロ
ック図。FIG. 2 is a block diagram of a vapor cleaning apparatus according to an embodiment of the present invention.
【図３】本発明の実施例３に係るエッチング時間とエッ
チング量の関係を示す特性図。FIG. 3 is a characteristic diagram showing a relationship between an etching time and an etching amount according to Example 3 of the present invention.
１０…洗浄室、１１…導入口、１２…排気口、２０…テ
フロン管、２１…洗浄処理液気化器、２２…マスフロー
コントローラ、３０…シリコンウェハ、４０…ウェハ観
察窓。10 ... Cleaning chamber, 11 ... Inlet port, 12 ... Exhaust port, 20 ... Teflon tube, 21 ... Cleaning process liquid vaporizer, 22 ... Mass flow controller, 30 ... Silicon wafer, 40 ... Wafer observation window.
Claims (11)
浄処理用のガスを基板上で凝縮させずに基板表面の洗浄
処理を行うことを特徴とする基板の洗浄処理方法。1. A method for cleaning a substrate, which comprises: when supplying a cleaning gas to a substrate, cleaning the surface of the substrate without condensing the cleaning gas on the substrate.
フッ化水素蒸気及び水蒸気の混合蒸気である基板の洗浄
処理方法。2. The gas for cleaning treatment according to claim 1,
A method for cleaning a substrate, which is a mixed vapor of hydrogen fluoride vapor and water vapor.
温度に制御する基板の洗浄処理方法。3. The method for cleaning a substrate according to claim 1, wherein the temperature of the substrate is controlled to a constant temperature.
等により室温付近の温度に一定に制御する基板の洗浄処
理方法。4. The method for cleaning a substrate according to claim 3, wherein the temperature of the substrate is controlled to a temperature near room temperature by water cooling or the like.
理を大気圧以下で行う基板の洗浄処理方法。5. The method for cleaning a substrate according to claim 1, wherein the cleaning process on the surface of the substrate is performed under atmospheric pressure.
蒸気の圧力が図１に示す圧力範囲である基板の洗浄処理
方法。6. The method of cleaning a substrate according to claim 5, wherein the hydrogen fluoride vapor pressure and the water vapor pressure are within the pressure range shown in FIG.
理を大気圧下で行う基板の洗浄処理方法。7. The method of cleaning a substrate according to claim 1, wherein the cleaning treatment of the substrate surface is performed under atmospheric pressure.
蒸気の圧力が図１に示す圧力範囲である基板の洗浄処理
方法。8. The method for cleaning a substrate according to claim 7, wherein the hydrogen fluoride vapor pressure and the water vapor pressure are within the pressure ranges shown in FIG.
ャリアガスもしくは希釈ガスとして用いる不活性ガスが
窒素、もしくはアルゴンである基板の洗浄処理方法。9. The method of cleaning a substrate according to claim 1, wherein the inert gas used as a carrier gas or a diluent gas of the cleaning gas is nitrogen or argon.
フッ化水素蒸気及びアルコールの混合蒸気である基板の
洗浄処理方法。10. The method for cleaning a substrate according to claim 1, wherein the cleaning gas is a mixed vapor of hydrogen fluoride vapor and alcohol.
塩化水素，三塩化ホウ素などのハロゲン化物である基板
の洗浄処理方法。11. The method for cleaning a substrate according to claim 1, wherein the cleaning gas is a halide such as hydrogen chloride or boron trichloride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1767395A JPH08213357A (en) | 1995-02-06 | 1995-02-06 | Substrate cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1767395A JPH08213357A (en) | 1995-02-06 | 1995-02-06 | Substrate cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08213357A true JPH08213357A (en) | 1996-08-20 |
Family
ID=11950382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1767395A Pending JPH08213357A (en) | 1995-02-06 | 1995-02-06 | Substrate cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08213357A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007248369A (en) * | 2006-03-17 | 2007-09-27 | Horiba Ltd | Gas analyzer and analysis method |
| JP2021500756A (en) * | 2017-10-23 | 2021-01-07 | ラム・リサーチ・アーゲーＬａｍ Ｒｅｓｅａｒｃｈ Ａｇ | Systems and methods to prevent stiction of high aspect ratio structures and / or systems and methods to repair high aspect ratio structures |
-
1995
- 1995-02-06 JP JP1767395A patent/JPH08213357A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007248369A (en) * | 2006-03-17 | 2007-09-27 | Horiba Ltd | Gas analyzer and analysis method |
| JP2021500756A (en) * | 2017-10-23 | 2021-01-07 | ラム・リサーチ・アーゲーＬａｍ Ｒｅｓｅａｒｃｈ Ａｇ | Systems and methods to prevent stiction of high aspect ratio structures and / or systems and methods to repair high aspect ratio structures |
| US11854792B2 (en) | 2017-10-23 | 2023-12-26 | Lam Research Ag | Systems and methods for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures |
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