JPH08204099A - Constitution of semiconductor device and its forming method - Google Patents
Constitution of semiconductor device and its forming methodInfo
- Publication number
- JPH08204099A JPH08204099A JP7013465A JP1346595A JPH08204099A JP H08204099 A JPH08204099 A JP H08204099A JP 7013465 A JP7013465 A JP 7013465A JP 1346595 A JP1346595 A JP 1346595A JP H08204099 A JPH08204099 A JP H08204099A
- Authority
- JP
- Japan
- Prior art keywords
- sealing resin
- heat sink
- semiconductor device
- heat dissipation
- dissipation plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 20
- 229920005989 resin Polymers 0.000 claims abstract description 65
- 239000011347 resin Substances 0.000 claims abstract description 65
- 238000007789 sealing Methods 0.000 claims abstract description 55
- 230000017525 heat dissipation Effects 0.000 claims description 36
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 239000003822 epoxy resin Substances 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 239000010931 gold Substances 0.000 abstract description 2
- 229920000647 polyepoxide Polymers 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 241000221535 Pucciniales Species 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の構造及び形
成方法に関し、詳しくはパワートランジスタやパワーＩ
Ｃ等の半導体素子で発生する熱を放熱するための放熱板
を有する半導体装置の構造及びその形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a semiconductor device and a method of forming the same, and more particularly to a power transistor and a power I.
The present invention relates to a structure of a semiconductor device having a heat radiating plate for radiating heat generated by a semiconductor element such as C and a method for forming the same.
【０００２】[0002]
【従来の技術】従来、半導体素子で発生した熱を放熱す
るための放熱板を有する従来の半導体装置の構造及び形
成方法の実施例としては、図４（ａ）に半導体装置の上
面図、図４（ｂ）に図４（ａ）におけるＺ３−Ｚ４での
断面図、図４（ｃ）に斜視図を示すようなパワートラン
ジスタがある。尚、図４（ｄ）はそのパッケージの形成
装置及び形成方法を示す。2. Description of the Related Art Conventionally, as an example of a structure and a forming method of a conventional semiconductor device having a heat dissipation plate for radiating heat generated in a semiconductor element, FIG. 4 (b) is a cross-sectional view taken along line Z3-Z4 in FIG. 4 (a), and FIG. 4 (c) is a perspective view showing a power transistor. It should be noted that FIG. 4D shows a device and a method for forming the package.
【０００３】図４（ａ）（ｂ）及び（ｃ）の半導体装置
は、リード端子２ａ及び放熱板２ｂとからなる金属性の
リードフレームと、リード端子２ａとつながる放熱板２
ｂに搭載されたトランジスタ等の半導体素子１と、半導
体素子１とリード端子２ａとを接続するための金属細線
（ワイヤという）３と、これらを封止するエポキシ等の
封止樹脂（パッケージ）４とからなる。放熱板２ｂにつ
ながるリード端子２ａは放熱板２ｂの端面付近で折り曲
げられてパッケージの厚みのほぼ中央から突出し、他の
リード端子２ａと半導体素子１とはワイヤ３により接続
されている。放熱板２ｂと封止樹脂４の一部には、放熱
板２ｂを図示しない他の放熱器にビス等で取り付けるた
めの取り付け孔４ａが設けられている。尚、一般的に樹
脂封止する時のリードフレームは、複数個の半導体装置
分を帯状に繋げたような形状をしている。In the semiconductor device shown in FIGS. 4A, 4B and 4C, a metallic lead frame composed of a lead terminal 2a and a heat radiating plate 2b and a heat radiating plate 2 connected to the lead terminal 2a are provided.
a semiconductor element 1 such as a transistor mounted on b, a thin metal wire (referred to as a wire) 3 for connecting the semiconductor element 1 and the lead terminal 2a, and a sealing resin (package) 4 for sealing these. Consists of. The lead terminal 2a connected to the heat radiating plate 2b is bent near the end surface of the heat radiating plate 2b and protrudes from substantially the center of the package thickness, and the other lead terminal 2a and the semiconductor element 1 are connected by the wire 3. A mounting hole 4a for mounting the radiator plate 2b to another radiator (not shown) with screws or the like is provided in a part of the radiator plate 2b and the sealing resin 4. In general, a lead frame for resin sealing has a shape in which a plurality of semiconductor devices are connected in a strip shape.
【０００４】次に、図４（ｄ）に基づいて半導体装置の
パッケージの形成方法の一例を説明する。所定の形状に
加工されたリードフレームの放熱板２ｂの所定の位置
に、半導体素子１をダイボンディングし、半導体素子１
とリード端子２ａとを各々ワイヤ３でワイヤボンディン
グした後、パッケージ形状を形成するキャビティ部６ｃ
と、キャビティ部６ｃに封止樹脂４を注入するための連
通路としてゲート部６ｅ及びランナ部６ｄとが形成され
た下金型６ａ及び上金型６ｂによりリード端子２ａの一
部を挟持し、Ａの方向から封止樹脂４を注入してキャビ
ティ部６ｃ内に充填し、その状態で封止樹脂４を固化さ
せる。封止樹脂４が固化した後、金型から半導体装置を
取り出し、不要な樹脂を除去するバリ取り工程やリード
端子間を繋いでいたダムバ（タイバともいう）を切断す
るタイバカット工程等の処理を行うことにより、個別の
半導体装置が完成する。Next, an example of a method for forming a semiconductor device package will be described with reference to FIG. The semiconductor element 1 is die-bonded to a predetermined position of the heat dissipation plate 2b of the lead frame which has been processed into a predetermined shape.
And the lead terminal 2a are wire-bonded with the wire 3, respectively, and then a cavity portion 6c for forming a package shape
And a part of the lead terminal 2a is sandwiched by the lower mold 6a and the upper mold 6b having the gate part 6e and the runner part 6d formed as a communication passage for injecting the sealing resin 4 into the cavity part 6c. The sealing resin 4 is injected from the direction A to fill the cavity 6c, and the sealing resin 4 is solidified in this state. After the sealing resin 4 is solidified, the semiconductor device is taken out from the mold and subjected to a deburring process for removing unnecessary resin and a tie bar cutting process for cutting the dam bar (also called tie bar) connecting the lead terminals. As a result, individual semiconductor devices are completed.
【０００５】[0005]
【発明が解決しようとする課題】従来の放熱板を有する
半導体装置の形成方法では、パッケージを形成するため
に封止樹脂４をキャビティ部６ｃ内に注入する時、注入
された封止樹脂４の圧力により、図４（ｄ）の点線２
ｂ′で示すように、放熱板２ｂが傾いてしまうことがあ
る。半導体素子１が搭載されている面と反対側の封止樹
脂４の厚みは０．３ｍｍ乃至０．７ｍｍしかないため、
放熱板２ｂが傾いて放熱板２ｂの周りの封止樹脂４の厚
みが変わると、熱伝導特性に斑を生じて放熱特性が極端
に悪くなるとともに、最悪の場合には、半導体素子１の
発熱が十分に放熱されなかったり内部で温度差が発生し
たりして、半導体素子１が熱で破壊されてしまうことも
あるという問題があった。In the conventional method of forming a semiconductor device having a heat dissipation plate, when the sealing resin 4 is injected into the cavity 6c to form a package, the injected sealing resin 4 is removed. Due to the pressure, the dotted line 2 in FIG.
As indicated by b ', the heat dissipation plate 2b may tilt. Since the thickness of the sealing resin 4 on the side opposite to the surface on which the semiconductor element 1 is mounted is only 0.3 mm to 0.7 mm,
When the thickness of the sealing resin 4 around the heat dissipation plate 2b changes due to the inclination of the heat dissipation plate 2b, the heat conduction characteristics become uneven and the heat dissipation characteristics deteriorate extremely, and in the worst case, the heat generated by the semiconductor element 1 is generated. However, there is a problem in that the semiconductor element 1 may be destroyed by heat due to insufficient heat dissipation or internal temperature difference.
【０００６】上述の問題を防ぐために、図４（ｄ）の点
線６ｆで示すように、放熱板２ｂを挟持したり押さえつ
けて固定するためのフレーム固定部６ｆを金型に設け
て、放熱板２ｂが傾かないようにしていた。しかしなが
ら、フレーム固定部６ｆにより挟持されている部分には
封止樹脂４が注入されないので、図４（ａ）（ｂ）及び
（ｃ）に示す固定溝４ｂが形成され、放熱板２ｂの周囲
を十分な厚みの樹脂で封止する事ができなかった。In order to prevent the above-mentioned problem, as shown by a dotted line 6f in FIG. 4 (d), a frame fixing portion 6f for sandwiching or pressing the heat radiation plate 2b to fix the heat radiation plate 2b is provided in the mold, and the heat radiation plate 2b is provided. Was trying not to lean. However, since the sealing resin 4 is not injected into the portion sandwiched by the frame fixing portion 6f, the fixing groove 4b shown in FIGS. 4A, 4B and 4C is formed, and the periphery of the heat dissipation plate 2b is formed. It could not be sealed with a resin of sufficient thickness.
【０００７】また、図示しない他の方法として、放熱板
２ｂを長めにしておいて、封止樹脂４の外側で放熱板２
ｂを挟持し、樹脂が硬化した後に不要な放熱板２ｂを切
断したり、封止樹脂４を分割形成して接着したりしてい
た。しかし上述のパッケージ形成方法は、放熱板２ｂを
金型で挟持する場合には、放熱板２ｂを封止する封止樹
脂４の厚みが部分的に薄かったり、パッケージから放熱
板２ｂが一部露出しているので、他の素子や配線等が放
熱板２ｂの露出部に接触して電気的に短絡したり、露出
部のリードフレームが錆びていくことにより半導体装置
の耐湿性等の信頼性が低下したり、静電気が封止樹脂４
の薄い部分に集中して印加されて半導体素子１の静電破
壊やラッチアップ等の原因になったりするという問題が
ある。また、封止樹脂４を分割形成して接着する場合に
は、接合部の強度が低く十分な信頼性を得られないとい
う問題がある。As another method (not shown), the heat dissipation plate 2b is made longer, and the heat dissipation plate 2 is provided outside the sealing resin 4.
The heat radiating plate 2b is cut after the resin is hardened by sandwiching b, or the sealing resin 4 is divided and formed and bonded. However, in the above-described package forming method, when the heat sink 2b is sandwiched by molds, the thickness of the sealing resin 4 that seals the heat sink 2b is partially thin, or the heat sink 2b is partially exposed from the package. As a result, other elements, wiring, etc. come into contact with the exposed portion of the heat dissipation plate 2b and electrically short-circuit, or the lead frame in the exposed portion rusts, resulting in reliability of the semiconductor device such as moisture resistance. Or the static electricity will decrease
There is a problem in that the voltage is concentrated and applied to a thin portion of the semiconductor element, which may cause electrostatic breakdown or latch-up of the semiconductor element 1. Further, when the sealing resin 4 is divided and formed and adhered, there is a problem that the strength of the joint is low and sufficient reliability cannot be obtained.
【０００８】そこで本発明はこれらの問題を解決し、半
導体装置のパッケージ形成装置の簡単な変更により、放
熱板が封止樹脂内で傾いて放熱特性が劣化したり信頼性
が低下したりするようなことがなく、放熱板の全面を所
定の厚さの封止樹脂により覆ったことを特徴とする半導
体装置及びその形成方法を提供することを目的とする。Therefore, the present invention solves these problems, and a simple modification of the package forming device of the semiconductor device may cause the heat sink to tilt in the encapsulation resin to deteriorate the heat dissipation characteristics or reduce the reliability. It is an object of the present invention to provide a semiconductor device characterized by covering the entire surface of a heat dissipation plate with a sealing resin having a predetermined thickness and a method for forming the same.
【０００９】[0009]
【課題を解決するための手段】上述の問題を解決するた
めに、請求項１の記載に係わる半導体装置は、半導体素
子で発生した熱を放熱するための放熱板を有する半導体
装置において、放熱板の全面を所定の厚さ以上の封止樹
脂により一体的に覆ったことを特徴とする。また、請求
項２の記載に係わる半導体装置の形成方法は、半導体素
子で発生した熱を放熱するための放熱板を有する半導体
装置の形成方法において、金型内に注入される封止樹脂
の注入圧力により金型内の容量を増すように連動するフ
レーム支え装置を有し、封止樹脂の注入時に、所定の注
入圧力になるまでフレーム支え装置により放熱板を固定
するとともに、封止樹脂が所定の注入圧力に達した後、
注入圧力によってフレーム支え装置が放熱板から離れる
ことにより、放熱板の全面を封止樹脂で覆うようにパッ
ケージを形成することを特徴とする。In order to solve the above problems, a semiconductor device according to claim 1 is a semiconductor device having a heat dissipation plate for dissipating heat generated in a semiconductor element. It is characterized in that the entire surface of (1) is integrally covered with a sealing resin having a predetermined thickness or more. The method of forming a semiconductor device according to claim 2 is the method of forming a semiconductor device having a heat dissipation plate for radiating heat generated in a semiconductor element, in which a sealing resin is injected into a mold. It has a frame support device that interlocks to increase the capacity in the mold by pressure, and when the sealing resin is injected, the heat dissipation plate is fixed by the frame support device until the injection pressure reaches a specified level, and the sealing resin is adjusted After reaching the injection pressure of
The package is formed so that the frame supporting device is separated from the heat dissipation plate by the injection pressure, so that the entire surface of the heat dissipation plate is covered with the sealing resin.
【００１０】[0010]
【作用】本発明のような半導体装置の構造及び形成方法
をとることにより、請求項１の記載に係わる半導体装置
は、放熱板の全面を所定の厚さ以上の封止樹脂により一
体的に覆えるようになる。また、請求項２の記載に係わ
る半導体装置の形成方法は、簡単な形成装置を使用する
だけで放熱板の全面を所定の厚さの封止樹脂により覆え
るようになる。By adopting the structure and method of forming a semiconductor device as in the present invention, the semiconductor device according to claim 1 integrally covers the entire surface of the heat dissipation plate with a sealing resin having a predetermined thickness or more. To get Further, in the method for forming a semiconductor device according to the second aspect, the entire surface of the heat dissipation plate can be covered with the sealing resin having a predetermined thickness by using a simple forming device.
【００１１】[0011]
【実施例】以下、本発明の一実施例を図１乃至図３を参
照しながら詳細に説明する。尚、本明細書では全図面を
通して、同一または同様の構成要素には同一の符号を付
して説明を簡略化している。図１及び図２は本発明の半
導体装置及び半導体装置の形成装置を示す説明図であ
り、図１（ａ）に半導体装置の上面図、図１（ｂ）に図
１（ａ）におけるＺ１−Ｚ２での断面図、図２に図１
（ｂ）と同様な方向から見た半導体装置の形成装置の一
部断面説明図を示している。また、図３は本発明の半導
体装置の形成方法を示す説明図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to FIGS. Throughout the drawings, the same or similar components are designated by the same reference numerals throughout the drawings to simplify the description. 1 and 2 are explanatory views showing a semiconductor device and a device for forming the semiconductor device of the present invention. FIG. 1A is a top view of the semiconductor device, and FIG. 1B is Z1- in FIG. 1A. Cross-sectional view at Z2, FIG.
The partial cross section explanatory drawing of the formation apparatus of the semiconductor device seen from the same direction as (b) is shown. Further, FIG. 3 is an explanatory view showing a method for forming a semiconductor device of the present invention.
【００１２】図１（ａ）及び（ｂ）の半導体装置は、従
来と同様にリード端子２ａ及び放熱板２ｂとからなる金
属性のリードフレームと、半導体素子１と、ワイヤ３
と、封止樹脂（パッケージ）４とからなる。放熱板２ｂ
につながるリード端子２ａは放熱板２ｂの端面付近で曲
げられてパッケージの厚みのほぼ中央から突出し、他の
リード端子２ａと半導体素子１とはワイヤ３により接続
されている。放熱板２ｂと封止樹脂４の一部には、放熱
板２ｂを他の放熱器にビス等で取り付けるための取り付
け孔４ａが設けられている。尚、樹脂封止する時のリー
ドフレームは、複数個の半導体装置分を帯状に繋げたよ
うな形状をしている。The semiconductor device shown in FIGS. 1A and 1B has a metallic lead frame composed of a lead terminal 2a and a heat sink 2b, a semiconductor element 1 and a wire 3 as in the conventional case.
And a sealing resin (package) 4. Heat sink 2b
The lead terminal 2a connected to is protruded from substantially the center of the thickness of the package by being bent near the end surface of the heat sink 2b, and the other lead terminal 2a and the semiconductor element 1 are connected by the wire 3. A mounting hole 4a for mounting the radiator plate 2b to another radiator with a screw or the like is provided in a part of the radiator plate 2b and the sealing resin 4. Note that the lead frame when resin-sealed has a shape like a plurality of semiconductor devices connected in a strip shape.
【００１３】従来の半導体装置と異なるのは、従来の半
導体装置のパッケージ４に有った樹脂厚みが特に薄い固
定溝４ｂの部分、または放熱板２ｂの一部がパッケージ
４の外部に出ていた部分が無くなり、フレーム支え装置
５の挟持部５ａの有った痕が固定痕４ｃとして残っては
いるが、放熱板２ｂの周囲が所定の厚さの封止樹脂４で
一体的に完全に覆われた形状になっていることであり、
本実施例では、封止樹脂４の厚みを０．３ｍｍ以上とし
ている。これにより、静電気等の外乱ノイズに対する耐
性や耐湿性等の信頼性を確保することができるようにな
っている。The difference from the conventional semiconductor device is that the fixing groove 4b portion of the conventional semiconductor device package 4 in which the resin thickness is particularly thin, or a part of the heat sink 2b is exposed to the outside of the package 4. Although the part disappears and the mark with the sandwiching part 5a of the frame supporting device 5 remains as the fixing mark 4c, the periphery of the heat dissipation plate 2b is completely covered integrally with the sealing resin 4 having a predetermined thickness. It is a broken shape,
In this embodiment, the thickness of the sealing resin 4 is 0.3 mm or more. As a result, it is possible to secure reliability such as resistance to disturbance noise such as static electricity and moisture resistance.
【００１４】尚、放熱板２ｂは放熱特性を良くするた
め、できるだけ熱伝導率の大きな金属板が良いので、銅
やアルミニウム等の金属や鉄やニッケル等の合金等の厚
板、例えば約１．３ｍｍの厚さの銅板が良く使われてい
る。また、封止樹脂４としてはエポキシ樹脂等の熱可塑
性の樹脂が良く使用され、ワイヤ３としては金やアルミ
ニウムの金属細線が良く使用されている。In order to improve the heat dissipation characteristics, the heat dissipation plate 2b is preferably a metal plate having as high a thermal conductivity as possible. Therefore, a thick plate such as a metal such as copper or aluminum or an alloy such as iron or nickel such as about 1. A copper plate with a thickness of 3 mm is often used. A thermoplastic resin such as an epoxy resin is often used as the sealing resin 4, and a fine metal wire of gold or aluminum is often used as the wire 3.
【００１５】図２は本発明の半導体装置のパッケージの
形成装置を示す。下金型６ａ及び上金型６ｂにはパッケ
ージ形状を形成するためのキャビティ部６ｃと、キャビ
ティ部６ｃ内に封止樹脂４を注入するための連通路とし
てランナ部６ｄ及びゲート部６ｅとが形成されていると
ともに、放熱板２ｂを一時的に挟持して固定するための
フレーム支え装置５の挟持部５ａを挿通するための貫通
孔が、各金型に二箇所づつ形成されている。FIG. 2 shows an apparatus for forming a semiconductor device package according to the present invention. The lower die 6a and the upper die 6b are provided with a cavity portion 6c for forming a package shape, and a runner portion 6d and a gate portion 6e as communication passages for injecting the sealing resin 4 into the cavity portion 6c. In addition, through holes for inserting the holding portions 5a of the frame supporting device 5 for temporarily holding and fixing the heat radiating plate 2b are formed at two locations in each mold.
【００１６】フレーム支え装置５は、リードフレームの
放熱板２ｂの一部を挟持するための挟持部５ａと、挟持
部５ａを所定の力で押しつけるための圧力調整部５ｂ
と、挟持部５ａが所定の距離まで離れたら挟持部５ａの
動きを止めるためのストッパ部５ｃとからなり、挟持部
５ａの先端は半球面や平面や傾斜角を有するような形状
をしている。The frame supporting device 5 has a holding portion 5a for holding a part of the heat dissipation plate 2b of the lead frame, and a pressure adjusting portion 5b for pressing the holding portion 5a with a predetermined force.
And a stopper portion 5c for stopping the movement of the holding portion 5a when the holding portion 5a is separated by a predetermined distance, and the tip of the holding portion 5a has a shape such as a hemispherical surface, a flat surface or an inclination angle. .
【００１７】また、リード端子２ａ及び放熱板２ｂから
なるリードフレームは、リード端子２ａを折り曲げ加工
された後、放熱板２ｂにつながる所定の位置（アイラン
ドという）に半導体素子１がダイボンディング及びワイ
ヤボンディングされている。尚、圧力調整部５ｂは、バ
ネ等の弾性体を使用した例を示しているが、ゴム等の弾
性体を始めとして空気圧や電磁力等を使用したもので良
く、挟持部５ａの材質は、封止樹脂４と接着しにくいと
ともに金型と熱膨張率が同じような材質、例えば金型と
同じ材質の金属を使用するのが良い。また、挟持部５ａ
の形状は、円柱状のものを用いているが、四角柱状でも
良く、挟持する箇所は１箇所でも複数箇所でも構わな
い。更に、ゲート部６ｅは、放熱板２ｂの延長線上に設
けられているが、封入樹脂４の注入に問題のない方向で
あればどこでも良い。In the lead frame composed of the lead terminal 2a and the heat sink 2b, the semiconductor element 1 is die-bonded and wire-bonded at a predetermined position (called an island) connected to the heat sink 2b after the lead terminal 2a is bent. Has been done. The pressure adjusting portion 5b shows an example in which an elastic body such as a spring is used, but an elastic body such as rubber or the like may be used such as air pressure or electromagnetic force, and the material of the holding portion 5a is It is preferable to use a material that does not easily adhere to the sealing resin 4 and has a coefficient of thermal expansion similar to that of the mold, for example, a metal of the same material as the mold. Also, the holding part 5a
Although a cylindrical shape is used as the shape, the shape may be a quadrangular shape, and the place to be sandwiched may be one place or a plurality of places. Further, the gate portion 6e is provided on the extension line of the heat dissipation plate 2b, but may be provided in any direction as long as there is no problem in the injection of the encapsulating resin 4.
【００１８】図３に基づいて、本発明による半導体装置
のパッケージ形成方法について説明する。図３の各図は
図２の形成装置の要部を抜粋した説明図で、一部は断面
図になっている。図３（ａ）は、下金型６ａ及び上金型
６ｂによりリードフレームのリード端子２ａの一部を挟
持するとともに、封止樹脂４が注入される圧力の７０乃
至９０％程度の力で放熱板２ｂを固定するように、フレ
ーム支え装置５を移動して挟持部５ａで放熱板２ｂの一
部を挟持した後、Ａの方向からランナ部６ｄ及びゲート
部６ｅを介して封止樹脂４を注入し始めている様子を示
している。この時、放熱板２ｂは封入樹脂４により押さ
れるが、挟持部５ａにより挟持されているので放熱板２
ｂが傾くことはない。A semiconductor device package forming method according to the present invention will be described with reference to FIG. Each drawing of FIG. 3 is an explanatory view in which a main part of the forming apparatus of FIG. 2 is extracted, and a part thereof is a sectional view. In FIG. 3A, a part of the lead terminal 2a of the lead frame is sandwiched by the lower mold 6a and the upper mold 6b, and heat is radiated with a force of about 70 to 90% of the pressure at which the sealing resin 4 is injected. After the frame supporting device 5 is moved so as to fix the plate 2b and a part of the heat dissipation plate 2b is sandwiched by the sandwiching portion 5a, the sealing resin 4 is removed from the direction A through the runner portion 6d and the gate portion 6e. It shows how the injection is starting. At this time, the heat radiating plate 2b is pushed by the encapsulating resin 4 but is held by the holding portion 5a, so the heat radiating plate 2b is held.
b does not tilt.
【００１９】図３（ｂ）は、キャビティ６ｃ内に封止樹
脂４がほぼ充填されている状態を示しているが、封止樹
脂４の注入圧力が最終圧力の７０乃至９０％以内なの
で、挟持部５ａは放熱板２ｂを未だ挟持している状態を
示している。このような状態に設定する為には、例えば
挟持部５ａの太さが直径１．２ｍｍで樹脂注入の最終圧
力が約１．３ｋｇ／ｍｍ2 程度の場合には、圧力調整部
５ｂの反力を０．９ｋｇ／ｍｍ2 乃至１．２ｋｇ／ｍｍ
2 程度になるように調整すれば良い。FIG. 3B shows a state in which the sealing resin 4 is almost filled in the cavity 6c. However, since the injection pressure of the sealing resin 4 is within 70 to 90% of the final pressure, the sandwiching is performed. The portion 5a shows a state in which the heat dissipation plate 2b is still held. In order to set such a state, for example, when the thickness of the holding portion 5a is 1.2 mm and the final pressure of resin injection is about 1.3 kg / mm 2 , the reaction force of the pressure adjusting portion 5b is set. 0.9 kg / mm 2 to 1.2 kg / mm
It should be adjusted to about 2 .
【００２０】図３（ｃ）は、キャビティ６ｃ内の封入樹
脂４の注入圧力が更に高まって、各挟持部５ａがキャビ
ティ６ｃ内の空間を広げるように移動している状態を示
している。この時、既にキャビティ６ｃ内は封止樹脂４
が充填しているとともに、金型やリードフレームに接す
る部分から封止樹脂４の固化が始まっているので、挟持
部５ａが放熱板２ｂから離れても放熱板２ｂが傾くこと
はない。FIG. 3 (c) shows a state where the injection pressure of the encapsulating resin 4 in the cavity 6c is further increased and each holding portion 5a is moved so as to widen the space in the cavity 6c. At this time, the sealing resin 4 is already inside the cavity 6c.
Since the sealing resin 4 begins to solidify from the portion in contact with the mold and the lead frame, the heat radiating plate 2b does not tilt even if the sandwiching portion 5a is separated from the heat radiating plate 2b.
【００２１】図３（ｄ）は、各挟持部５ａの他端がスト
ッパ部５ｃに当たり、挟持部５ａの端部が金型面とほぼ
同一面まで広がって挟持部５ａの動きが止まっている状
態を示している。その後、この状態で封止樹脂４を完全
に硬化させ、封止樹脂４が固化した後に金型から半導体
装置を取り出し、不要な樹脂を除去するバリ取り工程や
リード端子間を繋いでいたダムバ（タイバともいう）を
切断するタイバカット工程等の処理を行うことにより、
個別の半導体装置が完成する。実施例の場合には挟持部
５ａの先端が半球面状なので、完成した半導体装置のパ
ッケージ４には挟持部２ｂによる固定痕４ｃが残る場合
があるが、放熱板２ｂを覆う封止樹脂４の厚みは確保さ
れているので問題はない。In FIG. 3D, the other end of each holding portion 5a abuts on the stopper portion 5c, the end portion of the holding portion 5a spreads to almost the same plane as the mold surface, and the movement of the holding portion 5a is stopped. Is shown. Then, in this state, the sealing resin 4 is completely cured, and after the sealing resin 4 is solidified, the semiconductor device is taken out from the mold, and a deburring step of removing unnecessary resin and a dam bar connecting the lead terminals ( By performing processing such as the tie bar cutting process for cutting
Individual semiconductor devices are completed. In the case of the embodiment, since the end of the sandwiching portion 5a has a hemispherical shape, the fixing mark 4c by the sandwiching portion 2b may remain on the package 4 of the completed semiconductor device, but the sealing resin 4 covering the heat dissipation plate 2b may be left. There is no problem because the thickness is secured.
【００２２】尚、本実施例では、３端子のトランジスタ
形状のみを示しているが、放熱板を有する半導体装置で
あれば３端子には限定されない。また、トランジスタの
種類はバイポーラでもＭＯＳでも、その複合でも構わな
い。Although only the three-terminal transistor shape is shown in this embodiment, the invention is not limited to three terminals as long as it is a semiconductor device having a heat sink. The type of transistor may be bipolar, MOS, or a combination thereof.
【００２３】[0023]
【発明の効果】請求項１の記載に係わる半導体装置は、
放熱板の全面を所定の厚さ以上の封止樹脂により覆える
ようになるので、他の素子や配線等と短絡するのを防ぐ
ことができるとともに、静電気等の外乱ノイズに対する
耐性が向上し、耐湿性等の信頼性が向上するという効果
がある。また、請求項２の記載に係わる半導体装置の形
成方法は、簡単な形成装置を使用するだけで放熱板の全
面を所定の厚さの封止樹脂により覆えるようになるの
で、大幅な製造装置の変更や購入を行わないで良いとと
もに、メンテナンス作業を簡単に行えるという効果があ
る。The semiconductor device according to the first aspect of the present invention is
Since the entire surface of the heat dissipation plate can be covered with a sealing resin having a predetermined thickness or more, it is possible to prevent short circuit with other elements, wiring, etc., and improve resistance to disturbance noise such as static electricity, There is an effect that reliability such as moisture resistance is improved. Further, in the method for forming a semiconductor device according to the second aspect of the present invention, since the entire surface of the heat sink can be covered with the sealing resin having a predetermined thickness by using a simple forming device, a large manufacturing device is required. There is an effect that it is not necessary to change or purchase and maintenance work can be performed easily.
【図１】 本発明の半導体装置の構造を示す説明図であ
る。FIG. 1 is an explanatory diagram showing a structure of a semiconductor device of the present invention.
【図２】 本発明の半導体装置の形成装置を示す説明図
である。FIG. 2 is an explanatory diagram showing a semiconductor device forming apparatus of the present invention.
【図３】 本発明の半導体装置の形成方法を示す説明図
である。FIG. 3 is an explanatory diagram showing a method for forming a semiconductor device of the present invention.
【図４】 従来の半導体装置及びその形成装置を示す説
明図である。FIG. 4 is an explanatory view showing a conventional semiconductor device and its forming device.
１ ：半導体素子 ２ ：リードフレーム ２ａ ：リード端子 ２ｂ ：放熱板 ３ ：ワイヤ（金属細線） ４ ：封止樹脂（パッケージ） ４ａ ：取り付け孔 ４ｂ ：固定溝 ４ｃ ：固定痕 ５ ：フレーム支え装置 ５ａ ：挟持部 ５ｂ ：圧力調整部 ５ｃ ：ストッパ部 ６ａ，６ｂ：金型 1: semiconductor element 2: lead frame 2a: lead terminal 2b: heat sink 3: wire (fine metal wire) 4: sealing resin (package) 4a: mounting hole 4b: fixing groove 4c: fixing mark 5: frame supporting device 5a: Holding part 5b: Pressure adjusting part 5c: Stopper part 6a, 6b: Mold
Claims (2)
の放熱板を有する半導体装置において、前記放熱板の全
面を所定の厚さ以上の封止樹脂により一体的に覆ったこ
とを特徴とする半導体装置。1. A semiconductor device having a heat dissipation plate for dissipating heat generated in a semiconductor element, wherein the entire surface of the heat dissipation plate is integrally covered with a sealing resin having a predetermined thickness or more. Semiconductor device.
の放熱板を有する半導体装置の形成方法において、金型
内に注入される封止樹脂の注入圧力により前記金型内の
容量を増すように連動するフレーム支え装置を有し、前
記封止樹脂の注入時に、所定の注入圧力になるまで前記
フレーム支え装置により前記放熱板を固定するととも
に、前記封止樹脂が所定の注入圧力に達した後、注入圧
力によって前記フレーム支え装置が前記放熱板から離れ
ることにより、前記放熱板の全面を前記封止樹脂で覆う
ようにパッケージを形成することを特徴とする半導体装
置の形成方法。2. A method of forming a semiconductor device having a heat dissipation plate for dissipating heat generated in a semiconductor element, wherein a capacity of the mold is increased by an injection pressure of a sealing resin injected into the mold. Has a frame supporting device interlocked with, and when the sealing resin is injected, the heat dissipation plate is fixed by the frame supporting device until reaching a predetermined injection pressure, and the sealing resin reaches a predetermined injection pressure. After that, the frame supporting device is separated from the heat dissipation plate by an injection pressure, so that the package is formed so as to cover the entire surface of the heat dissipation plate with the sealing resin.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7013465A JPH08204099A (en) | 1995-01-31 | 1995-01-31 | Constitution of semiconductor device and its forming method |
| CN96103513A CN1136710A (en) | 1995-01-31 | 1996-01-31 | Structure of semiconductor device and method for forming said device shell |
| KR1019960002201A KR960030390A (en) | 1995-01-31 | 1996-01-31 | Semiconductor device, method of forming semiconductor package and apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7013465A JPH08204099A (en) | 1995-01-31 | 1995-01-31 | Constitution of semiconductor device and its forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08204099A true JPH08204099A (en) | 1996-08-09 |
Family
ID=11833899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7013465A Pending JPH08204099A (en) | 1995-01-31 | 1995-01-31 | Constitution of semiconductor device and its forming method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH08204099A (en) |
| KR (1) | KR960030390A (en) |
| CN (1) | CN1136710A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010034349A (en) * | 2008-07-30 | 2010-02-12 | Sanyo Electric Co Ltd | Method of manufacturing semiconductor device and lead frame |
| WO2024219244A1 (en) * | 2023-04-21 | 2024-10-24 | ローム株式会社 | Semiconductor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60130129A (en) * | 1983-12-16 | 1985-07-11 | Nec Corp | Method for sealing isolation-type semiconductor element with resin |
| JPH04102338A (en) * | 1990-08-22 | 1992-04-03 | Toshiba Corp | Method and apparatus for manufacture of resin-sealed semiconductor device |
| JPH05144864A (en) * | 1991-11-22 | 1993-06-11 | Fujitsu Miyagi Electron:Kk | Manufacture of semiconductor device and lead frame |
| JPH05235074A (en) * | 1991-12-05 | 1993-09-10 | Consorzio Pel La Ric Sulla Microelectronica Nel Mezzogiorno | Semiconductor device and manufacture thereof |
-
1995
- 1995-01-31 JP JP7013465A patent/JPH08204099A/en active Pending
-
1996
- 1996-01-31 CN CN96103513A patent/CN1136710A/en active Pending
- 1996-01-31 KR KR1019960002201A patent/KR960030390A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60130129A (en) * | 1983-12-16 | 1985-07-11 | Nec Corp | Method for sealing isolation-type semiconductor element with resin |
| JPH04102338A (en) * | 1990-08-22 | 1992-04-03 | Toshiba Corp | Method and apparatus for manufacture of resin-sealed semiconductor device |
| JPH05144864A (en) * | 1991-11-22 | 1993-06-11 | Fujitsu Miyagi Electron:Kk | Manufacture of semiconductor device and lead frame |
| JPH05235074A (en) * | 1991-12-05 | 1993-09-10 | Consorzio Pel La Ric Sulla Microelectronica Nel Mezzogiorno | Semiconductor device and manufacture thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010034349A (en) * | 2008-07-30 | 2010-02-12 | Sanyo Electric Co Ltd | Method of manufacturing semiconductor device and lead frame |
| WO2024219244A1 (en) * | 2023-04-21 | 2024-10-24 | ローム株式会社 | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960030390A (en) | 1996-08-17 |
| CN1136710A (en) | 1996-11-27 |
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