JPH08181164A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH08181164A JPH08181164A JP6320281A JP32028194A JPH08181164A JP H08181164 A JPH08181164 A JP H08181164A JP 6320281 A JP6320281 A JP 6320281A JP 32028194 A JP32028194 A JP 32028194A JP H08181164 A JPH08181164 A JP H08181164A
- Authority
- JP
- Japan
- Prior art keywords
- bonding pad
- bonding
- semiconductor device
- film
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
- H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0504—14th Group
- H01L2924/05042—Si3N4
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置に関するもの
であり、特に耐ワイヤボンディング強度が高い半導体装
置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device having high resistance to wire bonding.
【０００２】[0002]
【従来の技術】半導体関連技術は絶え間なく発展し続け
ており、ワイヤボンディング技術もボンディングが自動
化され、ここ数十年で大きな進歩を遂げてきた。また、
半導体の集積度の向上にともない、ボンディングパッド
の信頼性も重要なファクタを占めるようになってきた。2. Description of the Related Art Semiconductor-related technology has been continuously developed, and wire bonding technology has been greatly automated in the past several decades. Also,
With the increase in the degree of integration of semiconductors, the reliability of bonding pads has also become an important factor.
【０００３】従来、半導体装置のボンディングパッドと
して以下の技術が用いられてきた。図５（ａ）は従来の
半導体装置の一例を示す断面図であり、図５（ｂ）は図
５（ａ）のボンディングパッド領域の平面構造を示す図
である。以下、図５（ａ）および図５（ｂ）を用いて従
来の半導体装置の概略構造について説明する。図５に示
すように、半導体素子（図示せず）が形成された基板５
１上には絶縁膜５２が形成されている。絶縁膜５２上に
はアルミニウムまたはアルミニウム合金から成る金属薄
膜で構成された半導体素子からつながる配線部５３とボ
ンディングパッド５４が所定の領域に形成されている。
さらに、絶縁膜５２上部、配線部５３上部およびボンデ
ィングパッド５４上の周辺部は保護膜５５で覆われてお
り、ボンディングパッド５４上にはワイヤボンディング
用の開口部が設けられている。これにより、半導体装置
のボンディングパッド領域が作製される。このボンディ
ングパッド５４を用いて、半導体装置を外部に電気的に
接続している。Conventionally, the following techniques have been used as bonding pads for semiconductor devices. FIG. 5A is a sectional view showing an example of a conventional semiconductor device, and FIG. 5B is a view showing a planar structure of the bonding pad region of FIG. 5A. The schematic structure of the conventional semiconductor device will be described below with reference to FIGS. 5 (a) and 5 (b). As shown in FIG. 5, a substrate 5 on which semiconductor elements (not shown) are formed
An insulating film 52 is formed on the surface 1. On the insulating film 52, a wiring portion 53 connected to a semiconductor element made of a metal thin film made of aluminum or an aluminum alloy and a bonding pad 54 are formed in predetermined regions.
Further, the insulating film 52 upper part, the wiring part 53 upper part and the peripheral part on the bonding pad 54 are covered with a protective film 55, and an opening for wire bonding is provided on the bonding pad 54. As a result, the bonding pad region of the semiconductor device is manufactured. The bonding pad 54 is used to electrically connect the semiconductor device to the outside.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述の
半導体装置をワイヤボンディングにて外部に電気的に接
続すると、図６に示すようにボンディングパッド５４と
ボンディングワイヤ５６との接着のときに、ボンディン
グパッド５４を構成するアルミニウムまたはアルミニウ
ム合金から成る金属薄膜がボンディングワイヤ５６に引
っ張られて剥がれてしまうという問題を有していた（図
６の５４ａは剥がれた金属薄膜）。さらに、ボンディン
グに不都合が生じてアルミニウムまたはアルミニウム合
金から成る金属薄膜が剥がれてしまったボンディングパ
ッド５４に再度ボンディングを行おうとした場合に、ボ
ンディングパッド５４とボンディングワイヤ５６との間
で接触不良が発生するという問題も有していた。この問
題は、ボンディングパッド５４を構成するアルミニウム
またはアルミニウム合金から成る金属薄膜が、大きな外
力が加わると変形し破損しやすいということと、ボンデ
ィングパッド５４とボンディングワイヤ５６との接着力
よりも、ボンディングパッド５４の中央部と絶縁膜５２
との密着性の方が弱くなっているためと考えられる。ま
た、この問題はとりわけ金属薄膜に十分厚みが取れない
場合に発生しやすい。例えば、液晶表示装置用配線材料
などでは、ボンディングパッド５４を構成するアルミニ
ウムまたはアルミニウム合金から成る金属薄膜の膜厚が
７００nm以下の場合もある。あるいは、ボンディングパ
ッド５４の開口部の面積が大きい場合も、アルミニウム
またはアルミニウム合金から成る金属薄膜の剥がれが発
生しやすい。However, when the above-described semiconductor device is electrically connected to the outside by wire bonding, the bonding pad 54 and the bonding wire 56 are bonded to each other as shown in FIG. There is a problem that the metal thin film made of aluminum or aluminum alloy forming 54 is pulled and peeled off by the bonding wire 56 (54a in FIG. 6 is a peeled metal thin film). Furthermore, if an attempt is made to perform bonding again on the bonding pad 54 where the thin metal film made of aluminum or aluminum alloy has been peeled off due to inconvenience in bonding, poor contact will occur between the bonding pad 54 and the bonding wire 56. I also had the problem. This problem is that the metal thin film made of aluminum or aluminum alloy that constitutes the bonding pad 54 is easily deformed and damaged when a large external force is applied, and that the bonding pad 54 and the bonding wire 56 are more adhesive than the bonding force. The central portion of 54 and the insulating film 52
It is thought that this is because the adhesiveness with is weaker. Further, this problem is likely to occur especially when the metal thin film cannot have a sufficient thickness. For example, in a wiring material for a liquid crystal display device, the film thickness of the metal thin film made of aluminum or aluminum alloy forming the bonding pad 54 may be 700 nm or less. Alternatively, even if the opening area of the bonding pad 54 is large, peeling of the metal thin film made of aluminum or aluminum alloy is likely to occur.
【０００５】本発明は上記従来の問題を解決するもの
で、ボンディングパッドを構成するアルミニウムまたは
アルミニウム合金から成る金属薄膜の剥がれによるボン
ディングパッドの破損を防止し、これによりボンディン
グ時にボンディング不良が発生しにくい耐ワイヤボンデ
ィング強度が高いボンディングパッドを有する半導体装
置を提供することを目的としている。The present invention solves the above-mentioned conventional problems, and prevents damage to the bonding pad due to peeling of the metal thin film made of aluminum or aluminum alloy forming the bonding pad, thereby preventing defective bonding during bonding. An object of the present invention is to provide a semiconductor device having a bonding pad with high resistance to wire bonding.
【０００６】[0006]
【課題を解決するための手段】請求項１記載の半導体装
置は、基板上に形成された半導体素子と、半導体素子を
基板の外部に電気的に接続するために基板上に形成され
た少なくとも１個のボンディングパッドとを有する半導
体装置であって、ボンディングパッド上の少なくとも周
辺部以外の一部には、保護膜が形成されていることを特
徴とする。A semiconductor device according to claim 1 is a semiconductor device formed on a substrate, and at least one semiconductor device formed on the substrate for electrically connecting the semiconductor device to the outside of the substrate. A semiconductor device having individual bonding pads, characterized in that a protective film is formed on at least a part of the bonding pad other than the peripheral portion.
【０００７】請求項２記載の半導体装置は、ボンディン
グパッドが保護膜により複数個の小領域に分割された領
域を有することを特徴とする。A semiconductor device according to a second aspect of the present invention is characterized in that the bonding pad has a region divided into a plurality of small regions by a protective film.
【０００８】請求項３記載の半導体装置は、基板にガラ
ス基板または半導体基板を用いることを特徴とする。A semiconductor device according to a third aspect is characterized in that a glass substrate or a semiconductor substrate is used as the substrate.
【０００９】[0009]
【作用】本発明によれば、ボンディングパッドを構成す
るアルミニウムまたはアルミニウム合金から成る金属薄
膜の剥がれによるボンディングパッドの破損を防止し、
ボンディング時にボンディング不良が発生しにくい耐ワ
イヤボンディング強度を高めることができると同時に、
ワイヤボンディングの歩留まりおよび信頼性を向上する
ことができる。これは、第一に、ボンディングパッド上
の周辺部以外の一部に保護膜を形成することにより、ボ
ンディングパッドが保護膜によって上から押さえられ、
ボンディングパッドを構成するアルミニウムまたはアル
ミニウム合金から成る金属薄膜とボンディングパッドの
下層に位置する絶縁膜との密着性が良好になるためと考
えられる。また第二に、変形しやすいアルミニウムまた
はアルミニウム合金から成る金属薄膜上の周辺部以外の
一部に別の薄膜が堆積されることにより、外力による変
形が起こりにくくなり膜剥がれが発生しにくくなるため
と考えられる。According to the present invention, it is possible to prevent damage to a bonding pad due to peeling of a thin metal film made of aluminum or an aluminum alloy forming the bonding pad,
It is possible to increase the resistance to wire bonding, which is less likely to cause defective bonding during bonding, and at the same time,
The yield and reliability of wire bonding can be improved. This is because, first, by forming a protective film on a part of the bonding pad other than the peripheral portion, the bonding pad is pressed from above by the protective film,
It is considered that the adhesion between the metal thin film made of aluminum or aluminum alloy forming the bonding pad and the insulating film located under the bonding pad becomes good. Secondly, because another thin film is deposited on a part of the metal thin film made of aluminum or aluminum alloy which is easily deformed except the peripheral portion, deformation due to external force is less likely to occur and film peeling is less likely to occur. it is conceivable that.
【００１０】[0010]
【実施例】以下、本発明の一実施例について図１（ａ）
および図１（ｂ）を参照して説明する。Embodiment An embodiment of the present invention will be described below with reference to FIG.
And it demonstrates with reference to FIG.1 (b).
【００１１】図１（ａ）は本発明の一実施例である半導
体装置の断面構造を示し、図１（ｂ）は図１（ａ）のボ
ンディングパッド領域の平面構造を示す図である。FIG. 1A shows a sectional structure of a semiconductor device according to an embodiment of the present invention, and FIG. 1B shows a planar structure of a bonding pad region of FIG. 1A.
【００１２】図１に示すように、トランジスタなどの半
導体素子（図示せず）が形成されたガラス基板１１上に
は例えば二酸化シリコン膜から成る絶縁膜１２が形成さ
れている。絶縁膜１２上にはアルミニウムまたはアルミ
ニウム合金から成る膜厚７００nm以下の金属薄膜で構成
された半導体素子からつながる配線部１３とボンディン
グパッド１４が所定の領域に形成されている。さらに、
絶縁膜１２上部、配線部１３上部、ボンディングパッド
１４上の周辺部およびボンディングパッド１４上の周辺
部以外の一部は、例えば窒化シリコン膜から成る保護膜
１５で覆われており、ボンディングパッド１４上にはワ
イヤボンディング用の開口部も設けられている。図１
（ｂ）は本発明の一実施例である半導体装置において、
ボンディングパッド１４上の周辺部以外の保護膜１５が
十字型に形成された場合を示している。As shown in FIG. 1, an insulating film 12 made of, for example, a silicon dioxide film is formed on a glass substrate 11 on which semiconductor elements (not shown) such as transistors are formed. On the insulating film 12, a wiring portion 13 and a bonding pad 14 connected to a semiconductor element formed of a metal thin film made of aluminum or an aluminum alloy and having a film thickness of 700 nm or less are formed in predetermined regions. further,
The insulating film 12, the upper portion of the wiring portion 13, the peripheral portion on the bonding pad 14 and a part other than the peripheral portion on the bonding pad 14 are covered with a protective film 15 made of, for example, a silicon nitride film. There is also an opening for wire bonding. FIG.
(B) is a semiconductor device which is an embodiment of the present invention,
The case where the protective film 15 other than the peripheral portion on the bonding pad 14 is formed in a cross shape is shown.
【００１３】上述の構成により半導体装置を構成すれ
ば、ボンディングパッド１４はボンディングパッド１４
上の周辺部以外に形成された保護膜１５により上から押
さえられるので、ボンディングパッド１４は完全に複数
個の小領域に分割され、ボンディングパッド１４全体に
渡って、ボンディングパッド１４を構成するアルミニウ
ムまたはアルミニウム合金から成る金属薄膜と下層に位
置する絶縁膜１２との密着性が良好になる。従って、ボ
ンディングパッド１４を構成するアルミニウムまたはア
ルミニウム合金から成る金属薄膜の膜厚が７００nm以下
であっても、膜剥がれは発生しにくく、ボンディングパ
ッドの破損を防止することができる。If the semiconductor device is constructed with the above-described structure, the bonding pad 14 is
Since it is pressed from above by the protective film 15 formed on a portion other than the upper peripheral portion, the bonding pad 14 is completely divided into a plurality of small regions, and the aluminum that constitutes the bonding pad 14 is formed over the entire bonding pad 14. Adhesion between the metal thin film made of an aluminum alloy and the insulating film 12 located below is improved. Therefore, even if the film thickness of the metal thin film made of aluminum or aluminum alloy that constitutes the bonding pad 14 is 700 nm or less, film peeling is unlikely to occur and damage to the bonding pad can be prevented.
【００１４】なお、上記実施例では保護膜１５を十字型
に形成しているが、この形状に限定されることなく、例
えば図２に示すように短冊状に形成しても、上記実施例
と同様の効果が得られる。さらに、図３および図４に示
すように保護膜１５がボンディングパッド１４の周辺部
まで達していなくても、ボンディングパッド１４を構成
するアルミニウムまたはアルミニウム合金から成る金属
薄膜の外力による変形が起こりにくくなり膜剥がれが発
生しにくくなるため、上記実施例と同様の効果が得られ
る。また、上記実施例では半導体素子をガラス基板上に
形成したが、これを半導体基板上としてもよい。また、
上記実施例ではボンディングパッド１４を構成する金属
薄膜をアルミニウムまたはアルミニウム合金としたが、
他の金属薄膜でも、上記実施例と同様の効果が得られる
ことは言うまでもない。Although the protective film 15 is formed in a cross shape in the above embodiment, it is not limited to this shape, and it may be formed in a strip shape as shown in FIG. The same effect can be obtained. Further, as shown in FIGS. 3 and 4, even if the protective film 15 does not reach the peripheral portion of the bonding pad 14, the metal thin film made of aluminum or aluminum alloy forming the bonding pad 14 is less likely to be deformed by an external force. Since the peeling of the film is less likely to occur, the same effect as that of the above embodiment can be obtained. Further, although the semiconductor element is formed on the glass substrate in the above embodiment, it may be formed on the semiconductor substrate. Also,
Although the metal thin film forming the bonding pad 14 is aluminum or aluminum alloy in the above embodiment,
Needless to say, the same effect as in the above embodiment can be obtained with other metal thin films.
【００１５】[0015]
【発明の効果】本発明によれば、ボンディングパッド上
に保護膜を形成することにより、ボンディングパッドは
保護膜により上から押さえられるので、ボンディングパ
ッドを構成するアルミニウムまたはアルミニウム合金か
ら成る金属薄膜とボンディングパッドの下層に位置する
絶縁膜との密着性が良好になり、また、ボンディングパ
ッド１４を構成するアルミニウムまたはアルミニウム合
金から成る金属薄膜の外力による変形が起こりにくくな
り、膜剥がれによるボンディングパッドの破損を防止す
ることができた。また、ボンディングパッドのボンディ
ング時にボンディング不良が発生しにくい耐ワイヤボン
ディング強度が高くなり、ワイヤボンディングを高速で
行うことができると同時に、ワイヤボンディングの歩留
まりおよび信頼性を向上することができた。さらに、上
記ワイヤボンディング技術により、信頼性の高い半導体
装置を提供することができるとともに、半導体装置の歩
留まりおよび生産性を向上することができた。According to the present invention, by forming the protective film on the bonding pad, the bonding pad is pressed from above by the protective film. Therefore, the bonding pad is bonded to the metal thin film made of aluminum or aluminum alloy. Adhesion with an insulating film located below the pad is improved, and the metal thin film made of aluminum or aluminum alloy forming the bonding pad 14 is less likely to be deformed by an external force, so that the bonding pad is prevented from being damaged due to film peeling. I was able to prevent it. In addition, wire bonding strength, which is less likely to cause defective bonding during bonding of the bonding pads, is increased, and wire bonding can be performed at high speed, and at the same time, the yield and reliability of wire bonding can be improved. Furthermore, the wire bonding technique can provide a highly reliable semiconductor device and can improve the yield and productivity of the semiconductor device.
【図１】（ａ）は本発明の一実施例における半導体装置
を示す断面図で、（ｂ）はその平面図1A is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention, and FIG. 1B is a plan view thereof.
【図２】本発明の一実施例の変形例の半導体装置を示す
平面図FIG. 2 is a plan view showing a semiconductor device of a modified example of one embodiment of the present invention.
【図３】本発明の一実施例の変形例の半導体装置を示す
平面図FIG. 3 is a plan view showing a semiconductor device of a modified example of one embodiment of the present invention.
【図４】本発明の一実施例の変形例の半導体装置を示す
平面図FIG. 4 is a plan view showing a semiconductor device of a modified example of the embodiment of the present invention.
【図５】（ａ）は従来の半導体装置を示す断面図で、
（ｂ）はその平面図FIG. 5A is a cross-sectional view showing a conventional semiconductor device,
(B) is a plan view
【図６】従来の半導体装置のボンディングパッド領域に
発生する膜剥がれを示す平面図FIG. 6 is a plan view showing film peeling occurring in a bonding pad region of a conventional semiconductor device.
１１ ガラス基板 １２ 絶縁膜（二酸化シリコン膜） １３ 配線部（アルミニウムまたはアルミニウム合金） １４ ボンディングパッド（アルミニウムまたはアルミ
ニウム合金） １５ 保護膜（窒化シリコン膜） ５１ 基板 ５２ 絶縁膜 ５３ 配線部（アルミニウムまたはアルミニウム合金） ５４ ボンディングパッド（アルミニウムまたはアルミ
ニウム合金） ５４ａ 剥がれた金属薄膜（アルミニウムまたはアルミ
ニウム合金） ５５ 保護膜 ５６ ボンディングワイヤ11 glass substrate 12 insulating film (silicon dioxide film) 13 wiring part (aluminum or aluminum alloy) 14 bonding pad (aluminum or aluminum alloy) 15 protective film (silicon nitride film) 51 substrate 52 insulating film 53 wiring part (aluminum or aluminum alloy) ) 54 bonding pad (aluminum or aluminum alloy) 54a peeled metal thin film (aluminum or aluminum alloy) 55 protective film 56 bonding wire
Claims (3)
導体素子を前記基板の外部に電気的に接続するために前
記基板上に形成された少なくとも１個のボンディングパ
ッドとを有する半導体装置であって、前記ボンディング
パッド上の少なくとも周辺部以外の一部に保護膜が形成
されていることを特徴とする半導体装置。1. A semiconductor device having a semiconductor element formed on a substrate and at least one bonding pad formed on the substrate for electrically connecting the semiconductor element to the outside of the substrate. A semiconductor device, wherein a protective film is formed on at least a portion of the bonding pad other than the peripheral portion.
個の小領域に分割された領域を有することを特徴とする
請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein the bonding pad has a region divided into a plurality of small regions by a protective film.
ることを特徴とする請求項１または２記載の半導体装
置。3. The semiconductor device according to claim 1, wherein a glass substrate or a semiconductor substrate is used as the substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6320281A JPH08181164A (en) | 1994-12-22 | 1994-12-22 | Semiconductor device |
| TW84105445A TW414788B (en) | 1994-05-31 | 1995-05-30 | Naphthalene derivatives |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6320281A JPH08181164A (en) | 1994-12-22 | 1994-12-22 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08181164A true JPH08181164A (en) | 1996-07-12 |
Family
ID=18119757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6320281A Pending JPH08181164A (en) | 1994-05-31 | 1994-12-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08181164A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002203871A (en) * | 2000-12-28 | 2002-07-19 | Hitachi Chem Co Ltd | Adhesive composite, method for connecting circuit terminal using the same and structure of connecting circuit terminal |
-
1994
- 1994-12-22 JP JP6320281A patent/JPH08181164A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002203871A (en) * | 2000-12-28 | 2002-07-19 | Hitachi Chem Co Ltd | Adhesive composite, method for connecting circuit terminal using the same and structure of connecting circuit terminal |
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