JPH0770752B2 - Quantum interference device - Google Patents
Quantum interference deviceInfo
- Publication number
- JPH0770752B2 JPH0770752B2 JP63133487A JP13348788A JPH0770752B2 JP H0770752 B2 JPH0770752 B2 JP H0770752B2 JP 63133487 A JP63133487 A JP 63133487A JP 13348788 A JP13348788 A JP 13348788A JP H0770752 B2 JPH0770752 B2 JP H0770752B2
- Authority
- JP
- Japan
- Prior art keywords
- quantum well
- layer
- quantum
- well structure
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005684 electric field Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000005428 wave function Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、極めて高速のスイッチング速度を有する量子
干渉素子に関するものである。TECHNICAL FIELD The present invention relates to a quantum interference device having an extremely high switching speed.
（従来の技術） 従来、固体内において電子波を干渉させ、電流変調を得
る技術として、フィジカル・レビュー・レターズ（Phys
ical Review Letters）誌、1985年、55巻、2344ページ
に記載されているような技術が知られている。これは第
３図に示すように固体内において電子波の２つの導波路
31を形成し、これに外部回路32から電位差を与えること
によって、それぞれの導波路を通過した電子波に位相差
を与え、次にこれらの電子波を干渉させることによって
電極33間のコンダクタンスを変調しようとするものであ
る。(Prior Art) Conventionally, as a technology for obtaining current modulation by interfering electron waves in a solid, Physical Review Letters (Phys
The technology as described in ical Review Letters), 1985, volume 55, page 2344 is known. As shown in Fig. 3, this is two waveguides of electron waves in a solid.
31 is formed, and a potential difference is applied from the external circuit 32 to this to give a phase difference to the electron waves that have passed through the respective waveguides, and then these electron waves are interfered to modulate the conductance between the electrodes 33. Is what you are trying to do.
（発明が解決しようとする問題点） しかしながら、上記記載の技術による量子干渉素子は、
素子および外部回路の抵抗および素子の電気容量によっ
て、電位差の変調速度が制限される、という欠点を有す
る。本発明の目的は外部から電位差を変調するのではな
く、光入射により仮想的に生成される電子−正孔対の示
す反分極場を用いて、電子波の位相制御を超高速（１ピ
コ秒以下）で行なうような素子構造の量子干渉素子及び
その駆動方法を提供することにある。(Problems to be Solved by the Invention) However, the quantum interference device according to the above-described technique is
The resistance of the element and the external circuit and the capacitance of the element limit the modulation speed of the potential difference. The object of the present invention is not to modulate the potential difference from the outside, but to use the anti-polarization field indicated by the electron-hole pair virtually generated by the incidence of light to control the phase of the electron wave at an extremely high speed (1 picosecond). It is to provide a quantum interference device having a device structure and a method for driving the quantum interference device as described below.
（問題点を解決するための手段） 本発明の量子干渉素子は、電子波を入射させる電極と、
前記電子波が通過する２つの導波路とを有し電子波を干
渉させる量子干渉素子において、層厚が電子の平均自由
行程程度である量子井戸層と、この量子井戸層よりも大
きな禁制帯幅を有する半導体からなる障壁層とを交互に
積層してなる量子井戸構造を有し、前記量子井戸構造が
前記２つの導波路に挟まれて配置され、前記量子井戸構
造の積層方向に電場を印加する電極を有し、前記量子井
戸構造に量子井戸を構成する各層に平行に偏光して、か
つ光子エネルギーが電子と正孔の量子準位間エネルギー
よりも小さい光を入射することを特徴とする。(Means for Solving the Problems) A quantum interference device of the present invention includes an electrode on which an electron wave is incident,
In a quantum interference device having two waveguides through which the electron wave passes, which interferes with the electron wave, a quantum well layer having a layer thickness of about an electron mean free path and a forbidden band width larger than the quantum well layer. A quantum well structure formed by alternately stacking barrier layers made of a semiconductor having a quantum well structure, the quantum well structure being sandwiched between the two waveguides, and an electric field applied in the stacking direction of the quantum well structure. Characterized in that light having an electrode for polarizing light parallel to each layer forming a quantum well in the quantum well structure and having a photon energy smaller than the energy between quantum levels of electrons and holes is incident. .
（作用） 以下、図面を参照して、本発明の作用を説明するが、電
子波の導波路間に電位差を与えて電子波の干渉を制御す
ることは、静電アハラノフ＝ボーム効果として知られて
いるので、ここでは量子井戸構造における電位差発生の
機構について説明する。以下の説明は理解を容易にする
ため多重量子井戸構造に含まれている１つの量子井戸構
造（１つの量子井戸層と、その両側の２つの障壁層から
なる）に注目する。ただし、他の量子井戸構造について
も全く同様の効果が生じる。第２図は、電場を積層方向
に印加したときの量子井戸構造の模式的なバンド構造
と、電子および正孔の波動関数を示す図である。この量
子井戸構造に、層に平行に偏光し、光子エネルギーが電
子と正孔の量子準位間エネルギーよりも小さい光を入射
させると、量子論の一般的な議論に基づいて、電子およ
び正孔は仮想的に励起されることになるが、量子井戸構
造の積層方向に関する空間的平均位置が電子と正孔で異
なっているため、積層方向に反分極場を作り、あらかじ
め印加していた電場を一部遮蔽し、これを弱める。しか
るに、この過程においては、電子および正孔は実際に生
成されているわけではないので、入射光を遮断すれば、
電子と正孔の量子準位間エネルギーと入射光の光子エネ
ルギーの差で決定されるハイゼンベルグの不確定性時間
の後、この反分極場は消滅する。この不確定性時間は、
前記エネルギー差を10meV程度とすれば、50フェムト秒
程度である。かくして入射光にほとんど完全に追随し
て、量子井戸構造における積層方向の電場が増減できる
ことになる。したがって、入射光にほとんど完全に追随
して、量子井戸構造の両端、もしくは量子井戸構造の内
外の電位差を増減することができることになるわけであ
る。この動作により、量子井戸構造を構成する各半導体
層に平行に進行する少なくとも２つの電子波の位相差
は、入射光にほとんど完全に追随して変調される。(Operation) The operation of the present invention will be described below with reference to the drawings. Controlling the interference of electron waves by applying a potential difference between the waveguides of the electron waves is known as the electrostatic Aharanov-Bohm effect. Therefore, the mechanism of potential difference generation in the quantum well structure will be described here. For ease of understanding, the following description focuses on one quantum well structure (consisting of one quantum well layer and two barrier layers on both sides thereof) included in the multiple quantum well structure. However, the same effect can be obtained with other quantum well structures. FIG. 2 is a diagram showing a schematic band structure of a quantum well structure and an electron and hole wave function when an electric field is applied in the stacking direction. When light, which is polarized parallel to the layer and has a photon energy smaller than the energy between quantum levels of electrons and holes, is incident on this quantum well structure, the electrons and holes are analyzed based on the general discussion of quantum theory. Is virtually excited, but since the spatial average position in the stacking direction of the quantum well structure is different for electrons and holes, an anti-polarization field is created in the stacking direction and the previously applied electric field is changed. Block some and weaken it. However, since electrons and holes are not actually generated in this process, if the incident light is blocked,
After the Heisenberg uncertainty time, which is determined by the difference between the energy between the quantum levels of electrons and holes and the photon energy of the incident light, this antipolarization field disappears. This uncertainty time is
If the energy difference is about 10 meV, it is about 50 femtoseconds. Thus, the electric field in the stacking direction of the quantum well structure can be increased or decreased by almost completely following the incident light. Therefore, the potential difference between both ends of the quantum well structure or inside and outside the quantum well structure can be increased or decreased by almost completely following the incident light. By this operation, the phase difference of at least two electron waves traveling in parallel to the respective semiconductor layers forming the quantum well structure is modulated almost completely following the incident light.
（実施例） 以下、第１図の実施例により本発明による量子干渉素子
の構成ならびに駆動方法について説明する。この実施例
は分子線エピタキシー法（MBE）により製作したもので
ある。この実施例の製作にあたっては、まずSiドープｎ
型のGaAs基板101上に厚さ1.0μｍのSiドープGaAsバッフ
ァ層102、厚2.0μｍのSiドープｎ型Al0.4Ga0.6Asクラッ
ド層103を積層する。次に厚さ100ÅのノンドープAlAs層
104、厚さ50ÅのノンドープGaAs層105、厚さ25Åのノン
ドープAlAs層106を積層した後、厚さ100Åのノンドープ
GaAs層107と厚さ50ÅのノンドープAl0.4Ga0.6As層108を
この順に交互に４周期積層する。その後選択エッチング
により中央部（長さ0.5μｍ）だけを残しAlAs層106を上
面まで除去する。その後、厚さ100ÅのノンドープAlAs
層109を積層し、両端部をエッチングによりGaAs層105の
上端まで除去する。次に厚さ50ÅのノンドープGaAs層11
0を積層し、厚さ100ÅのノンドープAlAs層111を積層
し、その上に2.0μｍのBeドープｐ型Al0.4Ga0.6Asクラ
ッド層112、厚さ0.5μｍのBeドープｐ型GaAsコンタクト
層113を積層して多層構造を作製した。次にイオン・イ
ンプランテーション法によってSiを両端にドープしn+型
の電極部114を形成した。次に、上面および下面のGaAs
層を選択エッチングにより除去し、その周辺部にリング
電極115を真空蒸着により形成して、この実施例の製作
を完了した。この量子干渉素子の互いに対向する電極11
4に電流を流し電子波をGaAs層105からなる導波路に入射
する。次に円形のGaAs層を除去した部分に、光子エネル
ギー1.6eVの光（2MW/cm2）を入射し、0.6Vの電圧を電極
115と基板101間に印加して電極114の電流を測定した。
光を入射しないときには電極114間の電流は１μＡであ
ったが、上記の条件の光を入射すると、その電流はほぼ
完全にゼロになった。また入射光を時間幅100フェムト
秒のパルスにして入射したときには、電流の変調は全く
これに追随し、時間遅れは全くなかった。なお上記測定
は4.2Kで遂行された。(Example) Hereinafter, the configuration and driving method of the quantum interference device according to the present invention will be described with reference to the example of FIG. This example is manufactured by the molecular beam epitaxy method (MBE). In manufacturing this embodiment, first, Si-doped n
A 1.0-μm thick Si-doped GaAs buffer layer 102 and a 2.0-μm-thick Si-doped n-type Al 0.4 Ga 0.6 As cladding layer 103 are laminated on a p-type GaAs substrate 101. Next, a 100Å thick undoped AlAs layer
104, non-doped GaAs layer 105 with a thickness of 50 Å and non-doped AlAs layer 106 with a thickness of 25 Å, and then non-doped with a thickness of 100 Å
A GaAs layer 107 and a non-doped Al 0.4 Ga 0.6 As layer 108 having a thickness of 50 Å are alternately laminated in this order for four periods. After that, the AlAs layer 106 is removed to the upper surface by selective etching, leaving only the central portion (length 0.5 μm). After that, 100 Å thick undoped AlAs
Layer 109 is laminated and both ends are removed by etching to the upper end of GaAs layer 105. Next, a 50 Å thick undoped GaAs layer 11
0 is laminated, a 100 Å thick non-doped AlAs layer 111 is laminated, and a 2.0 μm Be-doped p-type Al 0.4 Ga 0.6 As clad layer 112 and a 0.5 μm-thick Be-doped p-type GaAs contact layer 113 are laminated thereon. The layers were laminated to form a multilayer structure. Next, Si was doped at both ends by an ion implantation method to form an n + type electrode portion 114. Next, the top and bottom GaAs
The layer was removed by selective etching, and a ring electrode 115 was formed on the periphery of the layer by vacuum evaporation to complete the fabrication of this example. Electrodes 11 facing each other of this quantum interference device
A current is made to flow in 4 and an electron wave is made incident on the waveguide formed of the GaAs layer 105. Next, light (2 MW / cm2) with a photon energy of 1.6 eV is incident on the portion where the circular GaAs layer has been removed, and a voltage of 0.6 V is applied to the electrode.
A current was applied between the electrode 115 and the substrate 101 and the current of the electrode 114 was measured.
The current between the electrodes 114 was 1 μA when no light was incident, but when the light under the above conditions was incident, the current became almost completely zero. When the incident light was applied as a pulse with a time width of 100 femtoseconds, the modulation of the current followed this, and there was no time delay. The above measurement was performed at 4.2K.
以上の実施例においてはGaAs/AlGaAs系の材料について
説明したが、光学的に活性な量子井戸層を形成できる他
のIII−Ｖ族II−IV化合物半導体であっても良い。Although the GaAs / AlGaAs material has been described in the above embodiments, another III-V group II-IV compound semiconductor capable of forming an optically active quantum well layer may be used.
（発明の効果） 本発明による量子干渉素子は、素子内の電場の増減が光
に追随して行えるので、以上述べたように極めて高速の
スイッチング応答が可能である。(Effect of the Invention) In the quantum interference device according to the present invention, since the electric field in the device can be increased / decreased by following light, extremely fast switching response is possible as described above.
第１図は本発明による量子干渉素子の一実施例の構成
図、第２図は本発明の原理を説明するためのバンド構造
ならびに電子と正孔の波動関数を示す模式図、第３図は
従来の量子干渉素子の構成図である。 図において、 101……Siドープｎ型GaAs基板 102……Siドープｎ型GaAsバッファー層 103……Siドープｎ型Al0.4Ga0.6Asクラッド層 104……ノンドープAlAs層 105……ノンドープGaAs層 106……ノンドープAlAs層 107……ノンドープGaAs層 108……ノンドープAl0.4Ga0.6As層 109……ノンドープAlAs層 110……ノンドープGaAs層 111……ノンドープAlAs層 112……ノンドープAl0.4Ga0.6Asクラッド層 113……Beドープｐ型GaAsコンタクト層 114……n+型電極 115……リング電極 21……量子井戸層 22……障壁層 23……電子の波動関数 24……正孔の波動関数 31……電子波導波路 32……外部回路 33……電極 である。FIG. 1 is a schematic diagram of an embodiment of a quantum interference device according to the present invention, FIG. 2 is a schematic diagram showing a band structure and electron and hole wave functions for explaining the principle of the present invention, and FIG. It is a block diagram of the conventional quantum interference element. In the figure, 101 ... Si-doped n-type GaAs substrate 102 ... Si-doped n-type GaAs buffer layer 103 ... Si-doped n-type Al 0.4 Ga 0.6 As cladding layer 104 ... Non-doped AlAs layer 105 ... Non-doped GaAs layer 106 ... … Non-doped AlAs layer 107 …… Non-doped GaAs layer 108 …… Non-doped Al 0.4 Ga 0.6 As layer 109 …… Non-doped AlAs layer 110 …… Non-doped GaAs layer 111 …… Non-doped AlAs layer 112 …… Non-doped Al 0.4 Ga 0.6 As clad layer 113 …… Be-doped p-type GaAs contact layer 114 …… n + type electrode 115 …… Ring electrode 21 …… Quantum well layer 22 …… Barrier layer 23 …… Electron wave function 24 …… Hole wave function 31 …… Electron wave waveguide 32 ... External circuit 33 ... Electrode.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 Ｐｈｙｓｉｃａｌ Ｒｅｖｉｅｗ Ｌｅ ｔｔｅｒｓ，59（９），Ｐ．1018−1021 Ｐｈｙｓｉｃａｌ Ｒｅｖｉｅｗ Ｌｅ ｔｔｅｒｓ，59（９），Ｐ．1014−1017 ─────────────────────────────────────────────────── ─── Continuation of front page (56) References Physical Review Letters, 59 (9), p. 1018-1021 Physical Review Letters, 59 (9), P.P. 1014-1017
Claims (1)
通過する２つの導波路とを有し電子波を干渉させる量子
干渉素子において、層厚が電子の平均自由行程程度であ
る量子井戸層と、この量子井戸層よりも大きな禁制帯幅
を有する半導体からなる障壁層とを交互に積層してなる
量子井戸構造を有し、前記量子井戸構造が前記２つの導
波路に挟まれて配置され、前記量子井戸構造の積層方向
に電場を印加する電極を有し、前記量子井戸構造に量子
井戸を構成する各層に平行に偏光して、かつ光子エネル
ギーが電子と正孔の量子準位間エネルギーよりも小さい
光を入射することを特徴とする量子波干渉素子。1. A quantum interference device having an electrode for making an electron wave incident and two waveguides through which the electron wave passes, for making the electron wave interfere with each other. A quantum well whose layer thickness is about the mean free path of electrons. A quantum well structure in which a layer and a barrier layer made of a semiconductor having a forbidden band width larger than that of the quantum well layer are alternately laminated, and the quantum well structure is sandwiched between the two waveguides. And having an electrode for applying an electric field in the stacking direction of the quantum well structure, polarized parallel to each layer constituting the quantum well in the quantum well structure, and having a photon energy between quantum levels of electrons and holes. A quantum wave interference device characterized in that light smaller than energy is incident.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63133487A JPH0770752B2 (en) | 1988-05-30 | 1988-05-30 | Quantum interference device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63133487A JPH0770752B2 (en) | 1988-05-30 | 1988-05-30 | Quantum interference device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01302777A JPH01302777A (en) | 1989-12-06 |
| JPH0770752B2 true JPH0770752B2 (en) | 1995-07-31 |
Family
ID=15105918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63133487A Expired - Fee Related JPH0770752B2 (en) | 1988-05-30 | 1988-05-30 | Quantum interference device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770752B2 (en) |
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| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US7595263B2 (en) | 2003-06-18 | 2009-09-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |
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1988
- 1988-05-30 JP JP63133487A patent/JPH0770752B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
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| ＰｈｙｓｉｃａｌＲｅｖｉｅｗＬｅｔｔｅｒｓ，５９（９），Ｐ．１０１４−１０１７ |
| ＰｈｙｓｉｃａｌＲｅｖｉｅｗＬｅｔｔｅｒｓ，５９（９），Ｐ．１０１８−１０２１ |
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