JPH0746048B2 - Pattern shape observation device - Google Patents
Pattern shape observation deviceInfo
- Publication number
- JPH0746048B2 JPH0746048B2 JP13444088A JP13444088A JPH0746048B2 JP H0746048 B2 JPH0746048 B2 JP H0746048B2 JP 13444088 A JP13444088 A JP 13444088A JP 13444088 A JP13444088 A JP 13444088A JP H0746048 B2 JPH0746048 B2 JP H0746048B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- light
- substrate
- observation
- pattern shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】 〔概要〕 プリント板において光拡散性の樹脂から成る基板の表面
に不透明物体の銅等のパターンが形成される場合の、そ
のパターン形状を光学的に観測するパターン形状観測装
置で、詳しくは、基板上のパターンを位置合わせ等のた
めに観測範囲を限定して局部的に観測する手段に関し、 パターン形状観測を簡単な構造の変更で位置合わせ等に
直接適用することを目的とし、 光拡散性の基板の表面に形成される不透明なパターンに
対し、照明装置を斜方照射可能に設け、且つ観測装置を
基板の再放射光による基板とパターンの明暗のコントラ
ストによりパターン形状を観測するように設けるパター
ン形状観測装置において、照明装置の投影マスクには基
板の限定された観測部分のみに暗部を設けるよう遮光部
を制限設定し、観測装置には暗部からの再放射光のみを
観測するように撮像マスクを設けるように構成する。DETAILED DESCRIPTION OF THE INVENTION [Outline] When a pattern of an opaque object such as copper is formed on the surface of a substrate made of a light diffusing resin in a printed board, the pattern shape is optically observed. Regarding the device, specifically, it relates to means for locally observing the pattern on the substrate by limiting the observation range for alignment, etc., and applying pattern shape observation directly to alignment etc. with a simple structure change. For the purpose, an illuminating device is provided so as to obliquely irradiate an opaque pattern formed on the surface of a light diffusing substrate, and an observing device is provided with a pattern shape based on the contrast between the light and darkness of the substrate and the pattern due to re-emitted light from the substrate In the pattern shape observing device provided for observing, the light shielding part is limited in the projection mask of the illuminating device so that the dark part is provided only in the limited observing part of the substrate. The observation device is provided with an imaging mask so that only the re-emitted light from the dark part is observed.
本発明は、プリント板において光拡散性の樹脂から成る
基板の表面に不透明物体の銅等のパターンが形成される
場合の、そのパターン形状を光学的に観測するパターン
形状観測装置で、詳しくは、基板上のパターンを位置合
わせ等のために観測範囲を限定して局部的に観測する手
段に関する。The present invention is a pattern shape observing device for optically observing the pattern shape when a pattern such as copper of an opaque object is formed on the surface of a substrate made of a light diffusing resin in a printed board. The present invention relates to a means for locally observing a pattern on a substrate by limiting an observation range for alignment or the like.
一般にプリント板ではパターン形成後に、電気導通検査
で断線、ショートの接続状況試験が行われ、この外にパ
ターン外観検査でパターンの潜在的な欠損、突起等の検
査が行われて信頼性の向上を図っている。この場合のパ
ターン外観検査は主としてパターンを光学的に検出し
て、その形状を目視して判断するものであり、このパタ
ーン形状の観測方法に関しては種々提案されている。Generally, on a printed board, after the pattern is formed, a connection state test for disconnection and short circuit is performed by an electrical continuity test, and in addition to this, potential defects and protrusions of the pattern are also tested by a pattern visual inspection to improve reliability. I am trying. The pattern visual inspection in this case mainly detects the pattern optically and judges the shape visually, and various methods of observing the pattern shape have been proposed.
ところで、パターン形状の観測データは外観検査のみな
らず、基板上に部品を実装する際の部品リードとパター
ンの位置合わせ等にも使用される。この場合に、基板上
のすべてのパターン形状データから必要なものを取出し
て処理する方法が考えられるが、処理が煩雑化して好ま
しくない。従って、基板の位置合わせが必要な特定のパ
ターンのみに限定し、そのパターン形状を適確に観測す
ることが望まれる。By the way, the observation data of the pattern shape is used not only for the visual inspection but also for the alignment of the component lead and the pattern when the component is mounted on the board. In this case, a method is conceivable in which necessary data is extracted from all the pattern shape data on the substrate and processed, but the processing becomes complicated, which is not preferable. Therefore, it is desired to limit the position of the substrate to only a specific pattern that requires alignment and to accurately observe the pattern shape.
そこで、従来上記パターン形状の光学的観測として、本
件出願人により既に提案されている第4図(a)、
(b)に示すものがある。即ち、(a)において符号1
はプリント板、2はエポキシ樹脂から成る光拡散性の基
板、3は基板2上に形成される銅等の不透明のパター
ン、4は基板2の下に設けられる光反射板である。Therefore, FIG. 4 (a), which has been already proposed by the applicant of the present invention as an optical observation of the above pattern shape,
There is one shown in (b). That is, reference numeral 1 in (a)
Is a printed board, 2 is a light diffusing substrate made of epoxy resin, 3 is an opaque pattern such as copper formed on the substrate 2, and 4 is a light reflecting plate provided under the substrate 2.
また、基板2のパターン3側には照明装置10と観測装置
20が配設される。照明装置10は光源11、集光レンズ12、
(c)のように円形の遮光部13aを有する投影マスク13
及び投影レンズ14から成り、基板上に斜方照射して
(b)のように観測部分Aに暗部B1を設け、暗部B1の周
囲に投影光C1が直接照射される明部B2を設けるようにな
っている。観測装置20は観測部分Aの直上に撮像レンズ
21が設けられてパターンエッジの像を透過し、CCDカメ
ラ22により画像信号に変換し、画像処理装置23によりパ
ターン形状を表示するようになっている。In addition, the pattern 3 side of the substrate 2 is provided with an illumination device 10 and an observation device.
20 are provided. The illumination device 10 includes a light source 11, a condenser lens 12,
A projection mask 13 having a circular light-shielding portion 13a as shown in FIG.
And consists projection lens 14, and oblique irradiation on a substrate dark portion B 1 is provided in the observation part A as in (b), however, the bright portion B 2 which projected light C 1 around the dark portion B 1 is irradiated directly Is provided. The observation device 20 has an imaging lens directly above the observation portion A.
21 is provided to transmit the image of the pattern edge, the CCD camera 22 converts it into an image signal, and the image processing device 23 displays the pattern shape.
これにより、(b)のように明部B2からの投影光C1によ
り光反射板4で反射して基板2の内部に拡散光C2を通
し、この拡散光C2による再放射光C3を暗部B1で外に放射
してバック照射と同様の状態にする。そして、再放射光
C3による基板2と不透明のパターン3との明暗のコント
ラストにより、パターン3の輪郭の形状を検出するので
ある。As a result, as shown in (b), the diffused light C 2 is reflected by the light reflection plate 4 by the projected light C 1 from the bright portion B 2, and the diffused light C 2 is passed through the inside of the substrate 2, and the re-emitted light C 2 by this diffused light C 2 is transmitted. Radiate 3 in the dark area B 1 to the same state as back irradiation. And re-emitted light
The contour shape of the pattern 3 is detected by the contrast of light and dark between the substrate 2 and the opaque pattern 3 by C 3 .
ところで、上記従来例のものにあっては、マスク13によ
る暗部B1が観測部分Aに対応して広範囲に設定されてい
るため、(b)の破線のように観測部分A′が位置合わ
せ用に小さく限定される場合には、以下のような不具合
を生じる。即ち、観測部分A′で明部B2に近いパターン
3aでは再放射光C3が多いことで、パターン形状が明確に
検出される。しかし、明部B2に遠いパターン3bでは
(b)のように内部拡散光C2が散乱光C4として散出して
しまい、再放射光C3の量が減少してパターン3bの形状検
出が著しく悪化する。By the way, in the above-mentioned conventional example, since the dark portion B 1 by the mask 13 is set in a wide range corresponding to the observation portion A, the observation portion A ′ is for alignment as shown by the broken line in (b). If it is limited to a small size, the following problems will occur. That is, in the observation part A ′, a pattern close to the bright part B 2
In 3a, since the re-emitted light C 3 is large, the pattern shape is clearly detected. However, in the pattern 3b far from the bright portion B 2 , the internally diffused light C 2 is scattered as the scattered light C 4 as shown in (b), the amount of the re-radiated light C 3 is reduced, and the shape of the pattern 3b can be detected. Noticeably worse.
ここで、位置合わせ用として観測部分がA′のように限
定された場合の、その範囲内のパターン3a、3bはいずれ
も明確に検出する必要がある。外観検査では不明確な場
合は基板2の位置をずらして明確化することができる
が、位置合わせではそれができない。従って、位置合わ
せ用では定位置で限定された観測部分A′のパターン3
a、3bの形状を明確に検出することが望まれる。Here, when the observation part is limited to A'for alignment, the patterns 3a and 3b within the range must be clearly detected. If it is unclear in the visual inspection, the position of the substrate 2 can be shifted to clarify, but this cannot be done in the alignment. Therefore, for alignment, the pattern 3 of the observation part A ′ limited to a fixed position is used.
It is desirable to detect the shapes of a and 3b clearly.
本発明は、かかる点に鑑みなされたもので、その目的と
するところは、パターン形状観測を簡単な構造の変更で
位置合わせ等に直接適用することができるパターン形状
観測装置を提供することにある。The present invention has been made in view of the above points, and an object of the present invention is to provide a pattern shape observing device which can directly apply pattern shape observation to alignment and the like by changing a simple structure. .
上記目的を達成するため、本発明のパターン形状観測装
置は、 照明装置における投影マスクの遮光部を位置合わせ用の
限定された観測部分に対応して制限して設定し、基板上
で観測部分の暗部の周囲近傍に明部を設ける。In order to achieve the above object, the pattern shape observing device of the present invention sets the light shielding part of the projection mask in the illuminating device so as to be restricted corresponding to the limited observing part for alignment, and to set the observing part of the observing part on the substrate. A bright area is provided near the dark area.
また、観測装置では明部の拡大による不必要な光を除
き、再放射光のみを観測可能にするため、CCDカメラの
直前に上記投影マスクの遮光部と相似形状の透過部を有
する撮像マスクを設けるものである。Also, in the observation device, in order to eliminate unnecessary light due to enlargement of the bright part and only the re-emitted light can be observed, an imaging mask having a transmissive part similar in shape to the light shielding part of the projection mask just before the CCD camera is installed. It is provided.
上記構成に基づき、照明装置の投影マスクによる照射で
基板上の位置合わせ用の限定された観測部分のみが暗部
で、その周囲が明部になり、基板の内部拡散光のほとん
どが再放射光になって、観測部分内のすべての位置のパ
ターンのコントラストが明確化する。また、観測装置で
は撮像マスクにより不必要な散乱光を除いて、再放射光
のみによるパターンの像で形状観測するようになる。Based on the above configuration, only the limited observation part for alignment on the substrate is the dark part by irradiation with the projection mask of the illuminating device, and the surrounding part is the bright part, and most of the diffused light inside the substrate becomes re-emitted light. Then, the contrast of the pattern at all positions in the observation part becomes clear. Further, in the observation device, unnecessary scattering light is removed by an imaging mask, and the shape is observed with an image of the pattern only by the re-emitted light.
以下、本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第1図において、符号1はプリント板、2は光拡散性の
基板、3は不透明なパターン、4は光反射板である。基
板2のパターン側には照明装置10が設けられ、光源11、
集光レンズ12、投影マスク13、投影レンズ14により斜方
照射可能になっている。また、観測装置20は撮像レンズ
21、CCDカメラ22、画像処理装置23の外に、CCDカメラ22
の直前に撮像マスク24が設定されて成る。In FIG. 1, reference numeral 1 is a printed board, 2 is a light diffusing substrate, 3 is an opaque pattern, and 4 is a light reflecting plate. An illuminating device 10 is provided on the pattern side of the substrate 2, and a light source 11,
The condenser lens 12, the projection mask 13, and the projection lens 14 enable oblique irradiation. The observation device 20 is an imaging lens.
21, CCD camera 22, image processing device 23, CCD camera 22
The imaging mask 24 is set immediately before.
ここで、基板2に部品を平面実装する場合の位置合わせ
に用いる場合について述べると、第3図(a)のように
基板2の部品実装部のパターン3の一端には部品リード
と接続するランド5が設けられ、このランド5が多数方
形に並んで配置されている。そこで、このランド5の形
状観測を二次元的に行うには、ランド5の列において例
えばL字形に観測部分A′を限定して定めれば良い。こ
のため、マスク13においては第3図(b)のように観測
部分A′に対応して遮光部13a′が同様のL字形に制限
限定され、これ以外が透過部13b′になっている。ま
た、マスク24では同図(c)のように透過部24aがL字
形を成し、遮光部24bがそれ以外になって不必要な散乱
光を除去するようになっている。Here, the case of using for alignment in the case of mounting a component on the board 2 in a plane will be described. As shown in FIG. 5 are provided, and the lands 5 are arranged side by side in a multiplicity of squares. Therefore, in order to two-dimensionally observe the shape of the land 5, the observation portion A ′ may be limited to, for example, an L shape in the row of the land 5. Therefore, in the mask 13, as shown in FIG. 3 (b), the light-shielding portion 13a 'is limited to a similar L-shape corresponding to the observation portion A', and the other portion is the transmission portion 13b '. Further, in the mask 24, as shown in FIG. 7C, the transmission part 24a is L-shaped, and the light shielding part 24b is other than that to remove unnecessary scattered light.
上記構成により、照明装置10により斜方照射すると、第
2図のようにマスク13の遮光部13a′により基板2のラ
ンド5のL字形観測部分A′のみが暗部B1′になり、透
過部13b′によりその周囲近傍が明部B2′になって投影
光C1が照射する。そこで、投影光C1により基板2の内部
に入った内部拡散光C2は、直ちに暗部B1′の観測部分
A′に入ってほとんどが光反射板4により反射されて再
放射光C3になるのである。こうして、観測部分A′のす
べての位置で充分な再放射光C3が均一に放射し、これに
よりすべての位置で基板2とパターン3又はランド5の
明暗のコントラストが明確になる。With the above structure, when oblique irradiation by the illumination device 10 'by L-shaped observation part A of the lands 5 of the substrate 2' shielding portion 13a only of the mask 13 as shown in FIG. 2 is a dark part B 1 ', transmission unit 'vicinity around the the bright portion B 2' 13b projected light C 1 becomes to irradiation. Therefore, the internal diffused light C 2 that has entered the inside of the substrate 2 by the projection light C 1 immediately enters the observation portion A ′ of the dark portion B 1 ′, and most of it is reflected by the light reflection plate 4 to become re-emitted light C 3 . It will be. In this way, sufficient re-emitted light C 3 is uniformly emitted at all positions of the observation portion A ′, so that the contrast of light and dark of the substrate 2 and the pattern 3 or the land 5 becomes clear at all positions.
一方、明部B2′の拡大により投影光C1の反射光が観測装
置20側に多量に向うが、CCDカメラ22の直前のマスク24
の遮光部24bによりそれらの反射光の入力が阻止されて
いる。そこで、上記基板2の再放射光C3のみがマスク24
の透過部24aによりCCDカメラ22に入り、上述のコントラ
ストに基づいてパターン又はランド形状が観測される。On the other hand, due to the enlargement of the bright part B 2 ′, a large amount of the reflected light of the projection light C 1 is directed to the observation device 20 side, but the mask 24 just before the CCD camera 22
The light-shielding portion 24b prevents the reflected light from being input. Therefore, only the re-emitted light C 3 from the substrate 2 is transferred to the mask 24
The transparent portion 24a enters the CCD camera 22, and the pattern or land shape is observed based on the above-mentioned contrast.
尚、位置合わせの初期には暗部B1′で観測されるランド
数が少なく、基板2の位置を二次元的に移動して位置合
わせが進むにつれて観測されるランド数が多くなる。そ
して、暗部B1′と観測部分A′が合致して、L字形に並
んだランド5を観測した状態で位置合わせが終了する。It should be noted that the number of lands observed in the dark portion B 1 ′ is small in the initial stage of alignment, and the number of lands observed increases as the position of the substrate 2 is two-dimensionally moved and alignment progresses. Then, the alignment ends when the dark portion B 1 ′ and the observation portion A ′ are aligned and the lands 5 arranged in an L shape are observed.
以上、本発明の一実施例について述べたが、実装部品と
の位置合わせ以外にも使用可能であり、スルーホール等
の観測もできる。Although one embodiment of the present invention has been described above, the present invention can be used in addition to alignment with a mounting component and can also be used to observe through holes and the like.
観測部分A′はL字形以外にコ字形、3点又は4点に定
めても良い。The observation portion A ′ may be defined in U-shape, 3 points or 4 points in addition to the L-shape.
以上述べてきたように、本発明によれば、 パターン形状の観測において、局部的な複数個所のパタ
ーン形状をいずれも明確に観測できるので、位置合わせ
等の他用途にも直接使用でき、形状観測の解像度も向上
する。As described above, according to the present invention, when observing a pattern shape, it is possible to clearly observe all the local pattern shapes at a plurality of locations. Also improves the resolution.
観測部分に応じて投影及び撮像のマスクを定めれば良い
ので、構造が簡単である。Since the projection and imaging masks may be determined according to the observation portion, the structure is simple.
撮像マスクの付加により光量過多による観測不能が回避
される。The addition of the imaging mask avoids unobservability due to excessive light.
位置合わせ等の限定観測には光源の光量を低下し得る。The light quantity of the light source may be reduced for limited observation such as alignment.
第1図は本発明のパターン形状観測装置の実施例を示す
構成図、 第2図は光の進行状態を示す斜視図、 第3図(a)は位置合わせ用の限定観測部分を示す図、
(b)と(c)は各マスクの遮光及び透過部を示す図、 第4図(a)は従来例の構成図、(b)は光の進行状態
を示す斜視図、(c)は投影マスクを示す図である。 図において、 2は基板、3はパターン、10は照明装置、13は投影マス
ク、13′は遮光部、20は観測装置、24は撮像マスク、
A′は観測部分、B1′は暗部、C3は再放射光を示す。FIG. 1 is a configuration diagram showing an embodiment of a pattern shape observation device of the present invention, FIG. 2 is a perspective view showing a traveling state of light, and FIG. 3 (a) is a diagram showing a limited observation part for alignment.
(B) and (c) are diagrams showing the light shielding and transmitting parts of each mask, FIG. 4 (a) is a configuration diagram of a conventional example, (b) is a perspective view showing a traveling state of light, and (c) is a projection. It is a figure which shows a mask. In the figure, 2 is a substrate, 3 is a pattern, 10 is an illuminating device, 13 is a projection mask, 13 'is a light shielding part, 20 is an observing device, 24 is an imaging mask,
A 'observation portion, B 1' is dark area, C 3 indicates the re-emitted light.
Claims (1)
不透明なパターン(3)に対し、照明装置(10)を斜方
照射可能に設け、且つ観測装置(20)を基板(2)の再
放射光(C3)による基板(2)とパターン(3)の明暗
のコントラストによりパターン形状を観測するように設
けるパターン形状観測装置において、 照明装置(10)の投影マスク(13)には基板(2)の限
定された観測部分(A′)のみに暗部(B1′)を設ける
ように遮光部(13a′)を制限設定し、 観測装置(20)には暗部(B1′)からの再放射光(C3)
のみを観測するように撮像マスク(24)を設けるパター
ン形状観測装置。1. An illuminating device (10) is provided so as to obliquely illuminate an opaque pattern (3) formed on a surface of a light diffusing substrate (2), and an observing device (20) is provided on the substrate (20). In the pattern shape observing device provided so as to observe the pattern shape by the contrast of the brightness (darkness) of the substrate (2) and the pattern ( 3 ) by the re-emitted light (C 3 ) of 2), the projection mask (13) of the illuminating device (10) limit setting the substrate light-shielding portion to provide a 'dark portion (B 1 only) limited observation portion (a)' in (2) (13a ') in the dark portion in the observation apparatus (20) (B 1 ′) Re-emitted light (C 3 )
A pattern shape observing device in which an imaging mask (24) is provided to observe only the pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13444088A JPH0746048B2 (en) | 1988-06-02 | 1988-06-02 | Pattern shape observation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13444088A JPH0746048B2 (en) | 1988-06-02 | 1988-06-02 | Pattern shape observation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01304305A JPH01304305A (en) | 1989-12-07 |
| JPH0746048B2 true JPH0746048B2 (en) | 1995-05-17 |
Family
ID=15128408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13444088A Expired - Fee Related JPH0746048B2 (en) | 1988-06-02 | 1988-06-02 | Pattern shape observation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0746048B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7336374B2 (en) * | 2005-10-24 | 2008-02-26 | General Electric Company | Methods and apparatus for generating a mask |
-
1988
- 1988-06-02 JP JP13444088A patent/JPH0746048B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01304305A (en) | 1989-12-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |