JPH07335651A - Forming method of solder bump - Google Patents
Forming method of solder bumpInfo
- Publication number
- JPH07335651A JPH07335651A JP6126515A JP12651594A JPH07335651A JP H07335651 A JPH07335651 A JP H07335651A JP 6126515 A JP6126515 A JP 6126515A JP 12651594 A JP12651594 A JP 12651594A JP H07335651 A JPH07335651 A JP H07335651A
- Authority
- JP
- Japan
- Prior art keywords
- metal mask
- solder
- electrode pad
- bump
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 74
- 239000002184 metal Substances 0.000 claims abstract description 74
- 230000004907 flux Effects 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005192 partition Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/11005—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for aligning the bump connector, e.g. marks, spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/118—Post-treatment of the bump connector
- H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
- H01L2224/11849—Reflowing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、被バンプ形成体上に半
田バンプを形成するための半田バンプの形成方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solder bump forming method for forming a solder bump on a bump forming body.
【０００２】[0002]
【従来の技術】近年、回路基板上に電子部品を高密度に
実装するため、半田バンプを用いた実装方法が多く用い
られる。すなわち、回路基板あるいは電子部品の電極パ
ッド上にあらかじめ形成した半田の突起である半田バン
プを形成後、半田バンプを介して電子部品を回路基板の
電極パッドに固定し、その後半田バンプを溶融して電子
部品を接続する方法や、銀ペースト等の導電性接着剤を
用いて電極パッドに形成した半田バンプを回路基板ある
いは電子部品の電極パッドに接続する方法である。回路
基板は、プリント基板、セラミック基板、シリコン基板
等のいずれでも良く、また、電子部品は能動部品、受動
部品、機構部品のいずれでも良い。2. Description of the Related Art Recently, in order to mount electronic components on a circuit board with high density, a mounting method using solder bumps is often used. That is, after forming solder bumps which are solder protrusions formed in advance on the circuit board or the electrode pad of the electronic component, the electronic component is fixed to the electrode pad of the circuit substrate through the solder bump, and then the solder bump is melted. It is a method of connecting an electronic component or a method of connecting a solder bump formed on an electrode pad using a conductive adhesive such as silver paste to a circuit board or an electrode pad of an electronic component. The circuit board may be a printed board, a ceramic board, a silicon board, or the like, and the electronic component may be an active component, a passive component, or a mechanical component.
【０００３】図１０を用いて、回路基板の電極パッド上
に半田バンプを形成する従来の方法を説明する。A conventional method of forming solder bumps on electrode pads of a circuit board will be described with reference to FIG.
【０００４】図１０（ａ）のように、回路基板１の表面
には電極パッド２が形成されている。半田バンプ３を形
成するための電極パッド２を設けた回路基板１の表面
に、フラックスを塗布する（図示せず）。次に、図１０
（ｂ）のように、電極パッド２の位置に合わせて貫通孔
４を設けたメタルマスク５を重ね合わせる。メタルマス
ク５は、溶融半田と反応しない、ステンレス、モリブデ
ン等の金属板が使用される。貫通孔４の内径は、電極パ
ッド２の外径よりやや大きく設計される。各貫通孔４に
は、形成する半田バンプ３の大きさに合わせて、所定寸
法の半田ボール６を一つ置く。この状態でリフロー炉に
流すと（図示せず）、各貫通孔４の中で半田ボールが溶
融し、電極パッド２に図１０（ｃ）のような半球状の半
田バンプ３が形成される。As shown in FIG. 10A, electrode pads 2 are formed on the surface of the circuit board 1. Flux is applied to the surface of the circuit board 1 provided with the electrode pads 2 for forming the solder bumps 3 (not shown). Next, FIG.
As shown in (b), the metal mask 5 provided with the through holes 4 is overlapped with the position of the electrode pad 2. As the metal mask 5, a metal plate such as stainless steel or molybdenum that does not react with molten solder is used. The inner diameter of the through hole 4 is designed to be slightly larger than the outer diameter of the electrode pad 2. One solder ball 6 having a predetermined size is placed in each through hole 4 in accordance with the size of the solder bump 3 to be formed. When it is flowed in a reflow furnace in this state (not shown), the solder ball is melted in each through hole 4, and a hemispherical solder bump 3 as shown in FIG. 10C is formed on the electrode pad 2.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、半田ボ
ール６を溶融した後は、フラックスの残渣によってメタ
ルマスク５と回路基板１は強固に密着してしまい、剥離
が困難であった。However, after the solder balls 6 are melted, the metal mask 5 and the circuit board 1 are firmly adhered to each other due to the residue of the flux, and it is difficult to peel them off.
【０００６】また、図１１（ａ）のように、メタルマス
ク５の位置が長さＬ１だけずれて電極パッド２の一部と
重なった場合、図１１（ｂ）のように、電極パッド２の
一部しか半田バンプ３が形成できず、また半田バンプ３
の形状は変形して均一な高さの半球状の半田バンプを得
ることができなかった。このため、半田バンプ３と電子
部品の電極との接続状態にばらつきが生じ、信頼性に欠
ける場合があった。When the position of the metal mask 5 is displaced by the length L1 and overlaps a part of the electrode pad 2 as shown in FIG. 11A, the electrode pad 2 of the electrode pad 2 is removed as shown in FIG. 11B. Only a part of the solder bump 3 can be formed, and the solder bump 3
The shape was deformed, and a hemispherical solder bump having a uniform height could not be obtained. For this reason, the connection state between the solder bump 3 and the electrode of the electronic component may vary, and reliability may be lost.
【０００７】そこで本発明は、半田ボール６の溶融後で
もメタルマスク５が剥がしやすく、またメタルマスク５
の位置が多少ずれても、電極パッド２に均一な半田バン
プ３を形成することができる半田バンプの形成方法を提
供することを目的とする。Therefore, according to the present invention, the metal mask 5 is easily peeled off even after the solder balls 6 are melted, and the metal mask 5 is
It is an object of the present invention to provide a solder bump forming method capable of forming a uniform solder bump 3 on an electrode pad 2 even if the position is slightly shifted.
【０００８】[0008]
【課題を解決するための手段】本発明は、上記目的を達
成するために、次のように構成される。すなわち、本発
明の半田バンプの形成方法は、第一に、半田バンプを形
成する被バンプ形成体の表面にフラックスを塗布する工
程と、メタルマスクを前記被バンプ形成体に重ね合わせ
てメタルマスクに形成した貫通孔を電極パッド上に設け
る工程と、貫通孔に半田ボールを置く工程と、リフロー
炉で半田ボールを溶融する工程とからなる半田バンプの
形成方法において、少なくとも電極パッドとメタルマス
クの間に間隙を設けるものであり、第二に、メタルマス
クを置く部分と、被バンプ形成体を置く部分とから一体
に形成される治具を用い、前記被バンプ形成体と前記メ
タルマスクの間に間隙を設けるものであり、第三に、被
バンプ形成体を回路基板として構成すると共に、回路基
板と重ね合わせるメタルマスク面に支持部を設け、前記
回路基板と前記メタルマスクの間に間隙を設けるもので
あり、第四に、被バンプ形成体を回路基板として構成す
ると共に、回路基板と重ね合わせるメタルマスク面に、
電極パッドの外径よりやや大きい内径を有する穴と、該
穴の内径よりも小さい内径を有する貫通孔とを同心円状
に一体に設け、前記電極パッドと前記メタルマスクの間
に間隙を設けるものである。In order to achieve the above object, the present invention is configured as follows. That is, the method of forming a solder bump of the present invention includes, firstly, a step of applying a flux to a surface of a bump forming body on which a solder bump is to be formed, and a metal mask being superposed on the bump forming body to form a metal mask. In a method of forming a solder bump, which comprises a step of providing a formed through hole on an electrode pad, a step of placing a solder ball in the through hole, and a step of melting the solder ball in a reflow furnace, at least between the electrode pad and the metal mask. Secondly, using a jig integrally formed from a portion on which the metal mask is placed and a portion on which the bump formation target is placed, a gap is provided between the bump formation target and the metal mask. Thirdly, a gap is provided. Thirdly, the bump formation object is configured as a circuit board, and a supporting portion is provided on the metal mask surface to be overlapped with the circuit board. It is intended to provide a gap between the substrate and the metal mask, the fourth, as well as constituting an object to be bump-formed body as a circuit board, the metal mask surface overlaying a circuit board,
A hole having an inner diameter slightly larger than the outer diameter of the electrode pad and a through hole having an inner diameter smaller than the inner diameter of the hole are concentrically provided integrally, and a gap is provided between the electrode pad and the metal mask. is there.
【０００９】[0009]
【作用】被バンプ形成体とメタルマスクとの間に間隙を
設けたので、半田ボールの溶融後であっても、フラック
スの残渣によってメタルマスクと被バンプ形成体は密着
しない。また、メタルマスクの位置が多少ずれても、溶
融半田がメタルマスクに規制されず、電極パッド上に均
一に広がり、均一な高さの半田バンプが形成できる。Since the gap is provided between the bump forming body and the metal mask, the metal mask and the bump forming body do not adhere to each other due to the residue of the flux even after the solder balls are melted. Further, even if the position of the metal mask is slightly shifted, the molten solder is not restricted by the metal mask, and the solder bumps are evenly spread on the electrode pads and solder bumps having a uniform height can be formed.
【００１０】治具を使用する場合は、被バンプ形成体と
メタルマスクの位置ずれを防ぐことができる。When a jig is used, it is possible to prevent the displacement of the bump formation body and the metal mask.
【００１１】支持部を設けたメタルマスク、あるいは穴
および貫通孔を同心円状に一体に設けたメタルマスクを
使用する場合は、簡便に回路基板とメタルマスクあるい
は電極パッドとの間に間隙を形成できる。When a metal mask provided with a supporting portion or a metal mask having holes and through holes integrally provided concentrically with each other is used, a gap can be simply formed between the circuit board and the metal mask or the electrode pad. .
【００１２】[0012]
（実施例１）図１乃至図３を用いて、本発明に係る被バ
ンプ形成体に半田バンプを形成する方法の実施例を示
す。なお、図１０と同じ構成部分は同じ番号を用いて説
明を省略する。(Embodiment 1) An embodiment of a method for forming solder bumps on a bump forming body according to the present invention will be described with reference to FIGS. It should be noted that the same components as those in FIG.
【００１３】図１に示す治具７は、本発明の半田バンプ
の形成方法に用いられる。半田バンプ３を形成する際に
使用する治具７は、メタルマスク５を置く部分７Ａと、
被バンプ形成体、例えば回路基板を置く部分７Ｂとから
一体に形成される。メタルマスク設置部分７Ａは、メタ
ルマスク５の形状よりやや広く、中央部に回路基板を落
とし込むための四角形の開口部８を有する四角板９と、
四角板９の周縁部に連続して設けられた第一の立設部１
０とから形成される。回路基板設置部分７Ｂは、四角板
９の開口部８の周縁部に第一の立設部１０と反対向きに
立設して設けられた第二の立設部１１と、第二の立設部
１１の先端面と接続する底面１２とから一体に形成され
る。治具７は、溶融半田と反応しないアルミニウム等に
より形成する。The jig 7 shown in FIG. 1 is used in the solder bump forming method of the present invention. The jig 7 used for forming the solder bumps 3 includes a portion 7A on which the metal mask 5 is placed,
It is integrally formed from a body to be bumped, for example, a portion 7B on which a circuit board is placed. The metal mask installation portion 7A is slightly wider than the shape of the metal mask 5, and has a square plate 9 having a square opening 8 for dropping the circuit board in the central portion.
A first standing portion 1 continuously provided on the peripheral edge of the square plate 9.
It is formed from 0 and. The circuit board installation portion 7B includes a second upright portion 11 and a second upright portion that are provided upright in the peripheral edge portion of the opening 8 of the square plate 9 in a direction opposite to the first upright portion 10. It is integrally formed from the bottom surface 12 connected to the tip surface of the portion 11. The jig 7 is formed of aluminum or the like that does not react with the molten solder.
【００１４】次に、治具７を用いて半田バンプ１を形成
する方法を説明する。Next, a method of forming the solder bumps 1 using the jig 7 will be described.
【００１５】図２（ａ）のように、電極パッド２を上側
にした回路基板１を、治具７の底面１２に落とし込む。
電極パッド２にはフラックスが塗布されている。As shown in FIG. 2A, the circuit board 1 with the electrode pad 2 on the upper side is dropped on the bottom surface 12 of the jig 7.
Flux is applied to the electrode pad 2.
【００１６】次に、治具７のメタルマスク設置部分７Ａ
の四角板９に貫通孔４を有するメタルマスク５を載せ
る。この場合、貫通孔４は、電極パッド２の位置に合わ
せて形成されている。第二の立設部１１の高さＨ１は、
メタルマスク５と回路基板１の上面との間に間隙Ｇを形
成するように決められている。Next, the metal mask installation portion 7A of the jig 7
The metal mask 5 having the through holes 4 is placed on the square plate 9. In this case, the through hole 4 is formed so as to match the position of the electrode pad 2. The height H1 of the second standing portion 11 is
It is determined that a gap G is formed between the metal mask 5 and the upper surface of the circuit board 1.
【００１７】次に、図２（ｂ）のように、各貫通孔４に
半田ボール６を一つ置き、この状態でリフロー炉に流
す。この工程で半田ボール６は溶融し、図２（ｃ）のよ
うに、電極パッド２の上に半球状の半田バンプ３が形成
される。ここで半球状とは、半田バンプの３の断面形状
が球に近いものから、扁平に近いものまで幅広い形状を
いう。Next, as shown in FIG. 2 (b), one solder ball 6 is placed in each through hole 4 and is flown in the reflow furnace in this state. In this step, the solder balls 6 are melted and the hemispherical solder bumps 3 are formed on the electrode pads 2 as shown in FIG. Here, the hemispherical shape refers to a wide range of shapes from a solder bump 3 having a cross-sectional shape close to a sphere to a shape close to a flat shape.
【００１８】メタルマスク５と電極パッド２の間に間隙
Ｇを設けているため、図３（ａ）のように、メタルマス
ク５の位置が長さＬ２だけずれて、電極パッド２と一部
重なったとしても、溶融した半田はメタルマスク５によ
って遮られないため、図３（ｂ）のように、電極パッド
２の上全体に広がり、均一な高さの半球状の半田バンプ
３が形成される。Since the gap G is provided between the metal mask 5 and the electrode pad 2, as shown in FIG. 3A, the position of the metal mask 5 is displaced by the length L2 and partially overlaps with the electrode pad 2. Even if the molten solder is not blocked by the metal mask 5, it spreads over the entire electrode pad 2 and a hemispherical solder bump 3 having a uniform height is formed as shown in FIG. 3B. .
【００１９】間隙Ｇは、形成する半田バンプ３の大きさ
によって決まり、半田ボール６が貫通孔４から転がり出
てしまうのを防ぐため、少なくとも半田ボール６の直径
よりは狭く設けられる。The gap G is determined by the size of the solder bump 3 to be formed, and is provided at least smaller than the diameter of the solder ball 6 in order to prevent the solder ball 6 from rolling out from the through hole 4.
【００２０】（実施例２）図４および図５は、被バンプ
形成体として電子部品を用いた実施例を示す。(Embodiment 2) FIGS. 4 and 5 show an embodiment in which an electronic component is used as a bump formation body.
【００２１】図４のように、電子部品に半田バンプを形
成する際は、図１に示す治具７と、電子部品を配置する
区画１３を設けるための仕切り板１４を使用する。図１
に示す治具７の構成部分は同じ番号を用いて説明を省略
する。As shown in FIG. 4, when the solder bumps are formed on the electronic component, the jig 7 shown in FIG. 1 and the partition plate 14 for providing the partition 13 for arranging the electronic component are used. Figure 1
The constituent parts of the jig 7 shown in FIG.
【００２２】仕切り板１４は、治具７の回路基板設置部
分７Ｂの内寸法に合わせて縦横に板を井桁状に組み合わ
せて形成され、治具７の底面１２に落とし込まれて使用
される。仕切り板１４の厚みＨ２は、メタルマスク５を
四角板９に載せたときに当たらないように、四角板９の
上面より低くなるように決める。The partition plate 14 is formed by vertically and horizontally combining plates in a grid pattern in accordance with the internal dimensions of the circuit board installation portion 7B of the jig 7, and is used by being dropped on the bottom surface 12 of the jig 7. The thickness H2 of the partition plate 14 is determined so as to be lower than the upper surface of the square plate 9 so as not to hit when the metal mask 5 is placed on the square plate 9.
【００２３】次に、電子部品に半田バンプ１を形成する
方法を説明する。Next, a method of forming the solder bump 1 on the electronic component will be described.
【００２４】図５（ａ）のように、電極パッド１５を上
側にした電子部品１６を、各区画１３に配置する。電極
パッド１５にはフラックスが塗布されている。As shown in FIG. 5A, the electronic component 16 with the electrode pad 15 on the upper side is arranged in each section 13. Flux is applied to the electrode pads 15.
【００２５】次に、四角板９に貫通孔４を有するメタル
マスク５を載せる。この場合、貫通孔４は、電極パッド
１５の位置に合わせて形成されている。第二の立設部１
１の高さＨ１は、メタルマスク５と電子部品１６の上面
との間に間隙Ｇを形成するように決められている。Next, the metal mask 5 having the through holes 4 is placed on the square plate 9. In this case, the through hole 4 is formed so as to match the position of the electrode pad 15. Second standing part 1
The height H1 of 1 is set so as to form a gap G between the metal mask 5 and the upper surface of the electronic component 16.
【００２６】次に、図５（ｂ）のように、各貫通孔４に
半田ボール６を一つ置き、この状態でリフロー炉に流
す。この工程で半田ボール６は溶融し、図５（ｃ）のよ
うに、電極パッド１５の上に半球状の半田バンプ３が形
成される。Next, as shown in FIG. 5 (b), one solder ball 6 is placed in each through hole 4 and is allowed to flow in the reflow furnace in this state. In this step, the solder balls 6 are melted, and the hemispherical solder bumps 3 are formed on the electrode pads 15 as shown in FIG. 5C.
【００２７】メタルマスク５と電極パッド１５の間に間
隙Ｇを設けているため、図３と同様に、メタルマスク５
の位置がずれて、電極パッド１５と一部重なったとして
も、溶融した半田はメタルマスク５によって遮られない
ため、電極パッド１５の上全体に広がり、均一な高さの
半球状の半田バンプ３が形成される。Since the gap G is provided between the metal mask 5 and the electrode pad 15, as in FIG.
Even if the position is shifted and partially overlaps with the electrode pad 15, the molten solder is not blocked by the metal mask 5, and therefore spreads over the entire electrode pad 15 and has a hemispherical solder bump 3 of uniform height. Is formed.
【００２８】間隙Ｇは、形成する半田バンプ３の大きさ
によって決まり、半田ボール６が貫通孔４から転がり出
てしまうのを防ぐため、少なくとも半田ボール６の直径
よりは狭く設けられる。The gap G is determined by the size of the solder bump 3 to be formed, and is provided at least smaller than the diameter of the solder ball 6 in order to prevent the solder ball 6 from rolling out from the through hole 4.
【００２９】（実施例３）本発明に係る半田バンプの形
成方法の第三の実施例を図６を用いて説明する。この実
施例は、上述した実施例１のような治具７は使用せず、
メタルマスクの構成に特徴がある。(Embodiment 3) A third embodiment of the solder bump forming method according to the present invention will be described with reference to FIG. This embodiment does not use the jig 7 as in the first embodiment described above,
It is characterized by the structure of the metal mask.
【００３０】メタルマスク１７には、図４のように、半
田バンプ３を形成する電極パッド２の位置に合わせて、
電極パッド２の外径よりもやや大きい内径を有する貫通
孔４を設ける。また、メタルマスク１７の一方の面の四
隅および中央部には、同じ高さを有する突起１８を各一
つずつメタルマスク１７と一体に設ける。このメタルマ
スク１７は、突起１８を介して回路基板１に重ねられ
る。この場合突起１８により、回路基板１とメタルマス
ク１７の間には一定の幅の間隙Ｇが形成される。突起１
８の高さは、形成する半田バンプ１の大きさによって決
める。なお、突起１８は、メタルマスク１７と回路基板
１の平行が保てるならば、他の位置また数であっても良
い。As shown in FIG. 4, the metal mask 17 is aligned with the positions of the electrode pads 2 on which the solder bumps 3 are formed.
A through hole 4 having an inner diameter slightly larger than the outer diameter of the electrode pad 2 is provided. Further, one protrusion 18 having the same height is provided integrally with the metal mask 17 at each of the four corners and the central portion of one surface of the metal mask 17. The metal mask 17 is overlaid on the circuit board 1 via the protrusions 18. In this case, the protrusion 18 forms a gap G having a constant width between the circuit board 1 and the metal mask 17. Protrusion 1
The height of 8 is determined by the size of the solder bump 1 to be formed. Note that the protrusions 18 may be provided at other positions or numbers as long as the metal mask 17 and the circuit board 1 can be kept parallel to each other.
【００３１】図７は、間隙Ｇを形成するための他のメタ
ルマスクの実施例を示す。FIG. 7 shows an embodiment of another metal mask for forming the gap G.
【００３２】メタルマスク１９には、中央部に四角板状
の支持部２０を一体に設けてある。メタルマスク１９
は、支持部２０によって回路基板１上に支えられるの
で、支持部２０の高さに等しい幅の間隙Ｇが形成され
る。支持部２０の高さは、形成する半田バンプ１の大き
さに合わせて決める。The metal mask 19 is integrally provided with a square plate-shaped support portion 20 at the center thereof. Metal mask 19
Is supported on the circuit board 1 by the supporting portion 20, so that a gap G having a width equal to the height of the supporting portion 20 is formed. The height of the supporting portion 20 is determined according to the size of the solder bump 1 to be formed.
【００３３】（実施例４）本発明に係る半田バンプの形
成方法の第四の実施例を図８および図９を用いて説明す
る。(Embodiment 4) A fourth embodiment of the method for forming solder bumps according to the present invention will be described with reference to FIGS.
【００３４】この実施例は、電極パッド部分のみに間隙
を設けるメタルマスク２１の実施例を示す。メタルマス
ク２１には、電極パッド２の外径よりやや大きい内径を
有する穴２２と、穴２２よりも小さい内径を有する貫通
孔２３とが、同心円状に設けられている。穴２２を電極
パッド２に被せることにより、図９のように、穴２２の
深さに等しい間隙Ｇが電極パッド２の上に形成される。
穴２２の深さは、形成する半田バンプ３の大きさに合わ
せて決める。This embodiment shows an embodiment of the metal mask 21 in which a gap is provided only in the electrode pad portion. In the metal mask 21, a hole 22 having an inner diameter slightly larger than the outer diameter of the electrode pad 2 and a through hole 23 having an inner diameter smaller than the hole 22 are concentrically provided. By covering the electrode pad 2 with the hole 22, a gap G equal to the depth of the hole 22 is formed on the electrode pad 2, as shown in FIG.
The depth of the hole 22 is determined according to the size of the solder bump 3 to be formed.
【００３５】[0035]
【発明の効果】半田ボールを溶融する際のフラックスの
残渣によって、メタルマスクと被バンプ形成体は密着し
ないので、両者を剥がす工数がなくなる。このため、半
田バンプを形成する時間が短縮でき、コスト削減ができ
る。EFFECTS OF THE INVENTION Since the metal mask and the object to be bumped do not adhere to each other due to the residue of the flux when the solder ball is melted, the number of man-hours for peeling them off is eliminated. Therefore, the time for forming the solder bumps can be shortened and the cost can be reduced.
【００３６】電極パッド上に均一な高さの半球状の半田
バンプを形成することができるので、電子部品と半田バ
ンプの接続状態が一定し、信頼性が向上する。Since hemispherical solder bumps having a uniform height can be formed on the electrode pads, the connection state between the electronic component and the solder bumps becomes constant, and the reliability is improved.
【図１】本発明に係る被バンプ形成体の回路基板に半田
バンプを形成する方法に使用する治具の斜視図である。FIG. 1 is a perspective view of a jig used in a method for forming solder bumps on a circuit board of a bump formation target according to the present invention.
【図２】本発明に係る被バンプ形成体の回路基板に半田
バンプを形成する方法の概略図である。FIG. 2 is a schematic view of a method for forming solder bumps on a circuit board of a bump formation target according to the present invention.
【図３】本発明に係る被バンプ形成体の回路基板に半田
バンプを形成する方法において、図３（ａ）はメタルマ
スクの位置ずれを示す図で、図３（ｂ）は半田バンプの
形成状態を示す図である。FIG. 3A is a view showing a position shift of a metal mask in a method of forming solder bumps on a circuit board of a bump formation target according to the present invention, and FIG. 3B is formation of solder bumps. It is a figure which shows a state.
【図４】本発明に係る被バンプ形成体の電子部品に半田
バンプを形成する方法に使用する治具の斜視図である。FIG. 4 is a perspective view of a jig used in a method of forming a solder bump on an electronic component of a bump formation target according to the present invention.
【図５】本発明に係る被バンプ形成体の電子部品に半田
バンプを形成する方法の概略図である。FIG. 5 is a schematic view of a method for forming solder bumps on an electronic component of a bump formation target according to the present invention.
【図６】本発明に係る回路基板に半田バンプを形成する
方法に使用するメタルマスクの斜視図である。FIG. 6 is a perspective view of a metal mask used in a method of forming solder bumps on a circuit board according to the present invention.
【図７】本発明に係る回路基板に半田バンプを形成する
方法に使用する他のメタルマスクの斜視図である。FIG. 7 is a perspective view of another metal mask used in the method for forming solder bumps on the circuit board according to the present invention.
【図８】本発明に係る回路基板に半田バンプを形成する
方法に使用する他のメタルマスクに係り、図８（ａ）は
斜視図、図８（ｂ）は断面図を示す。FIG. 8 shows another metal mask used in a method for forming solder bumps on a circuit board according to the present invention, FIG. 8 (a) is a perspective view and FIG. 8 (b) is a sectional view.
【図９】本発明に係る回路基板に半田バンプを形成する
方法に使用する図８に示すメタルマスクを、基板に被せ
た状態を示す断面図である。9 is a cross-sectional view showing a state in which the substrate is covered with the metal mask shown in FIG. 8 used in the method of forming solder bumps on the circuit substrate according to the present invention.
【図１０】従来の回路基板に半田バンプを形成する方法
の概略図である。FIG. 10 is a schematic view of a method for forming a solder bump on a conventional circuit board.
【図１１】従来の回路基板に半田バンプを形成する方法
において、図１１（ａ）はメタルマスクの位置ずれを示
す図で、図１１（ｂ）は半田バンプの形成状態を示す図
である。11A and 11B are diagrams showing a displacement of a metal mask and FIG. 11B are diagrams showing a solder bump formation state in a conventional method of forming solder bumps on a circuit board.
１ 回路基板 ２ 電極パッド ３ 半田バンプ ４ 貫通孔 ５ メタルマスク ６ 半田ボール ７ 治具 １３ 区画 １４ 仕切り板 １５ 電極パッド １６ 電子部品 １７、１９、２１ メタルマスク １８ 突起 ２０ 支持部 ２２ 穴 ２３ 貫通孔 1 Circuit Board 2 Electrode Pad 3 Solder Bump 4 Through Hole 5 Metal Mask 6 Solder Ball 7 Jig 13 Partition 14 Partition Plate 15 Electrode Pad 16 Electronic Component 17, 19, 21 Metal Mask 18 Protrusion 20 Support Part 22 Hole 23 Through Hole
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｋ 3/34 ５０５ Ａ 8718−4Ｅ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location H05K 3/34 505 A 8718-4E
Claims (4)
の表面にフラックスを塗布する工程と、メタルマスクを
前記被バンプ形成体に重ね合わせてメタルマスクに形成
した貫通孔を電極パッド上に設ける工程と、貫通孔に半
田ボールを置く工程と、リフロー炉で半田ボールを溶融
する工程とからなる半田バンプの形成方法において、少
なくとも電極パッドとメタルマスクの間に間隙を設ける
ことを特徴とする半田バンプの形成方法。1. A step of applying a flux to a surface of a bump formation body for forming a solder bump, and a step of providing a through hole formed in the metal mask by superposing a metal mask on the bump formation body on an electrode pad. And a step of placing a solder ball in the through hole and a step of melting the solder ball in a reflow furnace, wherein a gap is provided at least between the electrode pad and the metal mask. Forming method.
形成体を置く部分とから一体に形成される治具を用い、
前記被バンプ形成体と前記メタルマスクの間に間隙を設
けることを特徴とする請求項１記載の半田バンプの形成
方法。2. A jig integrally formed from a portion on which a metal mask is placed and a portion on which a bump formation object is placed,
The method for forming solder bumps according to claim 1, wherein a gap is provided between the body to be bumped and the metal mask.
すると共に、該回路基板と重ね合わせるメタルマスク面
に支持部を設け、前記回路基板と前記メタルマスクの間
に間隙を設けることを特徴とする請求項１記載の半田バ
ンプの形成方法。3. The bumped body is configured as a circuit board, and a supporting portion is provided on a surface of the metal mask to be overlapped with the circuit board, and a gap is provided between the circuit board and the metal mask. The method for forming a solder bump according to claim 1.
すると共に、該回路基板と重ね合わせるメタルマスク面
に、電極パッドの外径よりやや大きい内径を有する穴と
該穴の内径よりも小さい内径を有する貫通孔とを同心円
状に設け、前記電極パッドと前記メタルマスクの間に間
隙を設けることを特徴とする請求項１記載の半田バンプ
の形成方法。4. The bumped body is formed as a circuit board, and a hole having an inner diameter slightly larger than the outer diameter of the electrode pad and an inner diameter smaller than the inner diameter of the hole are formed on the metal mask surface to be superposed on the circuit board. 2. The method of forming a solder bump according to claim 1, wherein the through hole is provided concentrically, and a gap is provided between the electrode pad and the metal mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12651594A JP3331745B2 (en) | 1994-06-08 | 1994-06-08 | Method of forming solder bumps |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12651594A JP3331745B2 (en) | 1994-06-08 | 1994-06-08 | Method of forming solder bumps |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07335651A true JPH07335651A (en) | 1995-12-22 |
| JP3331745B2 JP3331745B2 (en) | 2002-10-07 |
Family
ID=14937124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12651594A Expired - Fee Related JP3331745B2 (en) | 1994-06-08 | 1994-06-08 | Method of forming solder bumps |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3331745B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007324404A (en) * | 2006-06-01 | 2007-12-13 | Shibuya Kogyo Co Ltd | Array mask support device |
| CN106971995A (en) * | 2016-11-04 | 2017-07-21 | 唐虞企业股份有限公司 | Circuit pin positioning structure and manufacturing method of welding circuit assembly thereof |
-
1994
- 1994-06-08 JP JP12651594A patent/JP3331745B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007324404A (en) * | 2006-06-01 | 2007-12-13 | Shibuya Kogyo Co Ltd | Array mask support device |
| CN106971995A (en) * | 2016-11-04 | 2017-07-21 | 唐虞企业股份有限公司 | Circuit pin positioning structure and manufacturing method of welding circuit assembly thereof |
| CN106971995B (en) * | 2016-11-04 | 2019-08-06 | 唐虞企业股份有限公司 | Circuit pin positioning structure and manufacturing method of welding circuit assembly thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3331745B2 (en) | 2002-10-07 |
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