JPH07240117A - Composite dielectric and its manufacture - Google Patents
Composite dielectric and its manufactureInfo
- Publication number
- JPH07240117A JPH07240117A JP2777494A JP2777494A JPH07240117A JP H07240117 A JPH07240117 A JP H07240117A JP 2777494 A JP2777494 A JP 2777494A JP 2777494 A JP2777494 A JP 2777494A JP H07240117 A JPH07240117 A JP H07240117A
- Authority
- JP
- Japan
- Prior art keywords
- inorganic
- inorganic powder
- coupling agent
- composite dielectric
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 91
- 239000000843 powder Substances 0.000 claims abstract description 74
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 45
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 21
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 16
- 239000011737 fluorine Substances 0.000 claims abstract description 16
- 239000012784 inorganic fiber Substances 0.000 claims abstract description 12
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 8
- -1 silicon alkoxide Chemical class 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000003301 hydrolyzing effect Effects 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000007822 coupling agent Substances 0.000 abstract description 19
- 239000000463 material Substances 0.000 abstract description 13
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000011347 resin Substances 0.000 abstract description 8
- BSYQEPMUPCBSBK-UHFFFAOYSA-N [F].[SiH4] Chemical compound [F].[SiH4] BSYQEPMUPCBSBK-UHFFFAOYSA-N 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 18
- 239000000243 solution Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 239000004744 fabric Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000012047 saturated solution Substances 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 229920006026 co-polymeric resin Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PEVRKKOYEFPFMN-UHFFFAOYSA-N 1,1,2,3,3,3-hexafluoroprop-1-ene;1,1,2,2-tetrafluoroethene Chemical group FC(F)=C(F)F.FC(F)=C(F)C(F)(F)F PEVRKKOYEFPFMN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RWPJLSZZWZMIDM-UHFFFAOYSA-N [SiH4].C1(=CC=CC=C1)[SiH3] Chemical compound [SiH4].C1(=CC=CC=C1)[SiH3] RWPJLSZZWZMIDM-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
Landscapes
- Inorganic Insulating Materials (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、例えばプリント回路基
板等の電子部品に使用される、複合誘電体及びその製造
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite dielectric used in electronic parts such as a printed circuit board and a method for manufacturing the same.
【0002】[0002]
【従来の技術】高度情報化社会を迎え、情報伝送はより
高速化・高周波化の傾向にある。自動車電話やパーソナ
ル無線等の移動無線、衛星放送、衛星通信、CATV等
の分野では、機器のコンパクト化が推進されており、こ
れに伴い誘電体共振器等のマイクロ波用回路素子に対し
ても小型化が強く望まれている。2. Description of the Related Art In the advanced information society, information transmission tends to be faster and higher frequency. In the fields of mobile radio such as car phones and personal radios, satellite broadcasting, satellite communication, CATV, etc., downsizing of devices is being promoted, and accordingly, microwave circuit elements such as dielectric resonators are also being promoted. Miniaturization is strongly desired.
【0003】マイクロ波用回路素子の大きさは、使用電
磁波の波長が基準となる。比誘電率εr の誘電体中を伝
播する電磁波の波長λは、真空中の伝播波長をλ0 とす
るとλ=λ0 /(εr )0.5 となる。従って、マイクロ
波用回路素子がプリント回路基板に形成される場合に
は、使用される基板の比誘電率が高いほど小型の回路素
子になる。また、基板の比誘電率が高いと、電磁エネル
ギーが基板内に集中するため電磁波の漏れが少なく好都
合である。The size of the microwave circuit element is based on the wavelength of the electromagnetic wave used. The wavelength λ of the electromagnetic wave propagating through the dielectric having the relative permittivity ε r is λ = λ 0 / (ε r ) 0.5 when the propagation wavelength in vacuum is λ 0 . Therefore, when the microwave circuit element is formed on the printed circuit board, the higher the relative dielectric constant of the board used, the smaller the circuit element. Moreover, when the relative permittivity of the substrate is high, electromagnetic energy is concentrated in the substrate, which is convenient because there is little electromagnetic wave leakage.
【0004】上記のプリント回路基板として、例えば特
開平3−5140号に開示されているように、比誘電率
が高い無機粉体(チタン酸バリウム等)を添加したフッ
素系樹脂とガラスクロスからなる積層板が知られてい
る。このような回路基板は、アルミナ等のセラミックス
系基板に比べ、大面積化対応性や切断加工、孔加工等の
加工性に優れるため注目されている。As the above-mentioned printed circuit board, for example, as disclosed in Japanese Patent Application Laid-Open No. 3-5140, it is composed of a fluorine resin and glass cloth to which an inorganic powder having a high relative dielectric constant (barium titanate or the like) is added. Laminates are known. Such a circuit board is attracting attention because it is superior to a ceramic-based board made of alumina or the like in that it has a large area and is excellent in workability such as cutting and hole processing.
【0005】[0005]
【発明が解決しようとする課題】上記の無機粉体、フッ
素系樹脂及びガラスクロスからなる基板では、比誘電率
が20以上の無機粉体を使用した場合には、フッ素系樹
脂を成形過程で無機粉体と強固に密着させることが困難
なため、基板の加工時や使用時に湿気がその界面に入り
込み、誘電正接等の電気特性を著しく変化させるという
耐湿性に関する問題があった。DISCLOSURE OF INVENTION Problems to be Solved by the Invention In the above-mentioned substrate composed of inorganic powder, fluororesin and glass cloth, when inorganic powder having a relative dielectric constant of 20 or more is used, the fluororesin is formed in the molding process. Since it is difficult to firmly adhere to the inorganic powder, there is a problem with respect to moisture resistance that moisture enters the interface during processing or use of the substrate and significantly changes electrical characteristics such as dielectric loss tangent.
【0006】上記の事情に鑑み、本発明は、比誘電率が
20以上である無機粉体、フッ素系樹脂及びガラスクロ
スからなる基板の耐湿性を向上させることを課題とす
る。すなわち、本発明は、比誘電率が20以上である無
機粉体、フッ素系樹脂及び無機繊維基材からなる複合誘
電体であって、吸湿処理による誘電正接等の電気特性の
変化が少ない複合誘電体及びその製造方法を提供するこ
とを目的としている。In view of the above circumstances, it is an object of the present invention to improve the moisture resistance of a substrate composed of an inorganic powder having a relative dielectric constant of 20 or more, a fluororesin and a glass cloth. That is, the present invention is a composite dielectric comprising an inorganic powder having a relative permittivity of 20 or more, a fluororesin, and an inorganic fiber base material, and having a small change in electrical characteristics such as dielectric loss tangent due to moisture absorption treatment. It is intended to provide a body and a method for manufacturing the body.
【0007】[0007]
【課題を解決するための手段】本発明の複合誘電体は、
比誘電率が20以上である無機粉体、フッ素系樹脂及び
無機繊維基材からなる複合誘電体において、無機粉体
が、シリカを主成分とする無機質皮膜で被覆され、さら
に、フェニルシラン系及び/またはフッ素系シランカッ
プリング剤による表面処理が施されている無機粉体であ
ることを特徴としている。The composite dielectric of the present invention comprises:
In a composite dielectric comprising an inorganic powder having a relative dielectric constant of 20 or more, a fluororesin and an inorganic fiber base material, the inorganic powder is coated with an inorganic coating containing silica as a main component, And / or an inorganic powder that has been surface-treated with a fluorine-based silane coupling agent.
【0008】また、請求項3記載の発明の複合誘電体の
製造方法は、シリカの過飽和溶液からシリカを無機粉体
表面に析出させて、シリカを主成分とする無機質皮膜を
形成することを特徴とする請求項1または請求項2記載
の複合誘電体の製造方法である。Further, the method for producing a composite dielectric according to the third aspect of the present invention is characterized in that silica is deposited from the supersaturated solution of silica on the surface of the inorganic powder to form an inorganic film containing silica as a main component. The method for producing a composite dielectric according to claim 1 or 2.
【0009】また、請求項4記載の発明の複合誘電体の
製造方法は、シリコンアルコキシドを加水分解させてな
る処理液で無機粉体を処理し、次いで300〜1000
℃の範囲内の温度で加熱処理して、シリカを主成分とす
る無機質皮膜を形成することを特徴とする請求項1また
は請求項2記載の複合誘電体の製造方法である。According to a fourth aspect of the present invention, in the method for producing a composite dielectric, the inorganic powder is treated with a treatment liquid obtained by hydrolyzing a silicon alkoxide, and then 300 to 1,000.
The method for producing a composite dielectric according to claim 1 or 2, wherein heat treatment is performed at a temperature in the range of ° C to form an inorganic film containing silica as a main component.
【0010】以下、本発明を詳細に説明する。本発明で
使用する比誘電率が20以上である無機粉体としては、
平均粒径が0.3〜10μmのものが好ましく、種類に
ついては比誘電率が20以上であればよく特に限定はな
い。本発明で使用できる比誘電率が20以上である無機
粉体の例としては、酸化チタン(TiO2 等)、チタン
酸バリウム系(BaTi0.7 Zr0.3 O3 等)、チタン
酸ストロンチウム(SrTiO3 )、PbTi0.5 Zr
0.5 O3 系等のチタン元素を含有するチタン系無機粉体
やPb(Mg2/3 Nb2/3 )O3 系、Ba(Snx Mg
y Taz )O3系、Ba(Zrx Zny Taz )O3 系
等のペロブスカイト型結晶構造(あるいは複合ペロブス
カイト型結晶構造)を有する粉体などが挙げられる。
(なお、x、y、zは、x+y+z=1となる正の数を
表している。)本発明で使用できる無機粉体の形状につ
いては、特に限定はなく、例えば球状、様々な形のブロ
ック片的形状のもの等を使用することができる。The present invention will be described in detail below. As the inorganic powder having a relative dielectric constant of 20 or more used in the present invention,
The average particle diameter is preferably 0.3 to 10 μm, and the kind thereof is not particularly limited as long as the relative dielectric constant is 20 or more. Examples of the inorganic powder having a relative dielectric constant of 20 or more that can be used in the present invention include titanium oxide (TiO 2 etc.), barium titanate (BaTi 0.7 Zr 0.3 O 3 etc.), strontium titanate (SrTiO 3 ). , PbTi 0.5 Zr
Titanium-based inorganic powder containing titanium element such as 0.5 O 3 system, Pb (Mg 2/3 Nb 2/3 ) O 3 system, Ba (Sn x Mg)
Examples thereof include powders having a perovskite type crystal structure (or a complex perovskite type crystal structure) such as y Ta z ) O 3 type and Ba (Zr x Zn y Ta z ) O 3 type.
(Note that x, y, and z represent positive numbers such that x + y + z = 1.) There is no particular limitation on the shape of the inorganic powder that can be used in the present invention, and for example, spherical particles or blocks of various shapes can be used. A unilateral shape or the like can be used.
【0011】本発明で使用するフッ素系樹脂としては、
特に限定するものではないが、四フッ化エチレン樹脂
(融点320〜335℃)、四フッ化エチレン−六フッ
化プロピレン共重合体樹脂(融点260〜280℃)、
四フッ化エチレン−パーフルオロビニルエーテル共重合
体樹脂(融点302〜310℃)等のように、融点が2
50℃以上のものが、はんだ付け等の際に変形が少なく
望ましい。これらのフッ素系樹脂は高周波における損失
が少ないという性質があるので、本発明の複合誘電体は
高周波領域での使用に適したものとなる。The fluororesin used in the present invention includes
Although not particularly limited, tetrafluoroethylene resin (melting point 320 to 335 ° C.), tetrafluoroethylene-hexafluoropropylene copolymer resin (melting point 260 to 280 ° C.),
Like a tetrafluoroethylene-perfluorovinyl ether copolymer resin (melting point 302 to 310 ° C.), the melting point is 2
A material having a temperature of 50 ° C. or higher is preferable because it is less likely to be deformed during soldering. Since these fluorine-based resins have a property of low loss at high frequencies, the composite dielectric of the present invention is suitable for use in high frequencies.
【0012】本発明で使用する無機繊維基材としては、
特に限定するものではないが、例えばガラスクロスやガ
ラスマット等の基材が挙げられる。そして、この無機繊
維基材には、フッ素系樹脂との密着性を向上させるため
に、フェニルシラン系及び/またはフッ素系シランカッ
プリング剤による表面処理が施されていることが望まし
い。As the inorganic fiber base material used in the present invention,
Although not particularly limited, examples thereof include base materials such as glass cloth and glass mat. Further, it is desirable that the inorganic fiber base material is subjected to a surface treatment with a phenylsilane-based and / or fluorine-based silane coupling agent in order to improve the adhesion with the fluorine-based resin.
【0013】本発明における、シリカを主成分とする無
機質皮膜については、その成分の50重量%以上がシリ
カ成分であればよく、その製造方法については、とくに
限定はなく、例えば、後で説明する本発明の請求項3ま
たは請求項4記載の方法で製造することができる。In the present invention, the inorganic coating film containing silica as the main component may be such that 50% by weight or more of the component is a silica component, and the manufacturing method thereof is not particularly limited and will be described later, for example. It can be produced by the method according to claim 3 or 4 of the present invention.
【0014】本発明では、シリカを主成分とする無機質
皮膜で被覆されている無機粉体に、、フェニルシラン系
及び/またはフッ素系シランカップリング剤による表面
処理が施されてことが重要である。このように無機粉体
に直接にカップリング剤処理を施すのではなく、シリカ
を主成分とする無機質皮膜で被覆された無機粉体に対し
てカップリング剤処理が施されていて、しかも、使用す
るシランカップリング剤がフェニルシラン系及び/また
はフッ素系シランカップリング剤であるという構成によ
り、本発明の複合誘電体は、極めて耐湿性に優れたもの
となる。このカップリング剤処理の方法としては、特に
限定するものではないが、ヘンシェルミサー等でシリカ
を主成分とする無機質皮膜で被覆された無機粉体を攪拌
しながら、この無機粉体の表面にカップリング剤処理液
を滴下する乾式処理法や、カップリング剤処理液に無機
粉体を浸漬した後、処理液の溶剤を飛散させる湿式処理
法等を用いることができる。カップリング剤の配合量と
しては、無機粉体の重量に対し0.05〜5重量%の量
とすることが好ましい。なお、配合されたカップリング
剤の全量が無機粉体の表面に付着するとは限らないが、
本発明の目的である耐湿性の優れた複合誘電体を得るに
は前記の範囲の量のカップリング剤を配合することが好
ましい。In the present invention, it is important that the inorganic powder coated with the inorganic coating containing silica as the main component is subjected to a surface treatment with a phenylsilane-based and / or fluorine-based silane coupling agent. . As described above, the inorganic powder coated with the inorganic coating containing silica as the main component is not subjected to the coupling agent treatment directly on the inorganic powder, but is subjected to the coupling agent treatment. Due to the configuration that the silane coupling agent to be used is a phenylsilane-based and / or fluorine-based silane coupling agent, the composite dielectric of the present invention has extremely excellent moisture resistance. The method of treating the coupling agent is not particularly limited, but while stirring the inorganic powder coated with the inorganic coating containing silica as the main component with a Henschel Misser or the like, the surface of the inorganic powder is treated. A dry treatment method of dropping the coupling agent treatment liquid, a wet treatment method of immersing the inorganic powder in the coupling agent treatment liquid, and then scattering the solvent of the treatment liquid can be used. The amount of the coupling agent blended is preferably 0.05 to 5% by weight based on the weight of the inorganic powder. It should be noted that not all of the blended coupling agents adhere to the surface of the inorganic powder,
In order to obtain the composite dielectric having excellent moisture resistance, which is the object of the present invention, it is preferable to add the coupling agent in an amount within the above range.
【0015】本発明における、比誘電率が20以上であ
る無機粉体、フッ素系樹脂及び無機繊維基材の割合につ
いては、特に限定はなく、所望する複合誘電体の性能に
より適宜選択すればよいが、通常、比誘電率が20以上
である無機粉体を5〜75体積%、フッ素系樹脂を25
〜95体積%、無機繊維基材を5〜70体積%の範囲内
にすることが好ましい。In the present invention, the ratio of the inorganic powder having a relative dielectric constant of 20 or more, the fluororesin and the inorganic fiber base material is not particularly limited and may be appropriately selected depending on the desired performance of the composite dielectric. However, usually, the inorganic powder having a relative dielectric constant of 20 or more is 5 to 75% by volume, and the fluororesin is 25
It is preferable that the content of the inorganic fiber base material is in the range of ˜95% by volume and the inorganic fiber base material is in the range of 5 to 70% by volume.
【0016】また、本発明の複合誘電体を得るための複
合化の方法については、特に限定するものではないが、
例えば次のようにして行うことができる。すなわち、シ
リカを主成分とする無機質皮膜で被覆され、さらに、カ
ップリング剤処理が施されている無機粉体を、フッ素系
樹脂のディスパージョンに均一混合した混合液に無機繊
維基材を含浸、乾燥して、プリプグを得、得られたプリ
プレグを所定枚数積層し、さらに、その両面または片面
に銅箔やアルミ箔等の金属箔を配置し、加熱加圧して成
形する方法で、銅張り積層板(複合誘電体の一種)を製
造することができる。The compounding method for obtaining the compound dielectric of the present invention is not particularly limited,
For example, it can be performed as follows. That is, coated with an inorganic film containing silica as a main component, further, the inorganic powder that has been subjected to a coupling agent treatment, impregnated with an inorganic fiber substrate in a mixed liquid that is uniformly mixed in a dispersion of a fluororesin, After drying, a prepreg is obtained, a predetermined number of the obtained prepregs are laminated, and further, a metal foil such as a copper foil or an aluminum foil is arranged on both sides or one side of the prepreg, which is heated and pressed to form a copper-clad laminate. Plates (a type of composite dielectric) can be manufactured.
【0017】次に、本発明の請求項3の複合誘電体の製
造方法について説明する。この製造方法では、珪フッ化
水素酸溶液等にシリカ成分含有物を溶解させてシリカの
飽和溶液を得、次いでこの飽和溶液を、例えば、加温し
た後、ほう酸溶液を添加する等の方法により、シリカの
過飽和溶液を作製する。ついで、このシリカの過飽和溶
液からシリカを無機粉体表面に析出させて、シリカを主
成分とする無機質皮膜を形成する。この析出させる方法
については、例えば、シリカの過飽和溶液に無機粉体を
投入、放置して、シリカを無機粉体表面に析出させる方
法等が例示できる。Next, a method for manufacturing the composite dielectric according to claim 3 of the present invention will be described. In this manufacturing method, the silica component-containing material is dissolved in a hydrosilicofluoric acid solution or the like to obtain a saturated solution of silica, and the saturated solution is then heated, for example, by adding a boric acid solution. , Make a supersaturated solution of silica. Then, silica is deposited on the surface of the inorganic powder from the supersaturated solution of silica to form an inorganic film containing silica as a main component. Examples of this precipitation method include a method in which an inorganic powder is added to a supersaturated solution of silica and allowed to stand to precipitate silica on the surface of the inorganic powder.
【0018】次に、本発明の請求項4の複合誘電体の製
造方法について説明する。この製造方法では、シリコン
アルコキシドを加水分解させてなる処理液で無機粉体を
処理する。この処理方法としては、処理液に無機粉体を
浸漬した後、溶剤を飛散させる湿式処理法やヘンシェル
ミキサー等で無機粉体を攪拌しながら、無機粉体表面に
処理液を滴下する乾式法等を用いて行うことができる。
そして、処理液で無機粉体を処理した後、有機成分の除
去及びシリカを主成分とする無機質皮膜の緻密化を図る
ために加熱処理することが重要である。この加熱処理の
温度としては300〜1000℃の温度範囲で行うこと
が望ましく、300℃未満では無機質皮膜の緻密化が不
十分な場合があり、また1000℃を越える温度では無
機粉体同士が焼結し、粉砕の労力が多大なものになると
いう問題を生じる場合がある。Next, a method for manufacturing the composite dielectric according to claim 4 of the present invention will be described. In this manufacturing method, the inorganic powder is treated with a treatment liquid obtained by hydrolyzing silicon alkoxide. Examples of this treatment method include a wet treatment method in which the inorganic powder is immersed in the treatment liquid and then the solvent is scattered, and a dry method in which the treatment liquid is dropped on the surface of the inorganic powder while stirring the inorganic powder with a Henschel mixer or the like. Can be done using.
Then, after treating the inorganic powder with the treatment liquid, it is important to perform heat treatment in order to remove the organic component and densify the inorganic film containing silica as a main component. The temperature of this heat treatment is preferably carried out in the temperature range of 300 to 1000 ° C. If the temperature is lower than 300 ° C., the inorganic film may not be sufficiently densified, and if the temperature exceeds 1000 ° C., the inorganic powders are burned together. In some cases, this may cause a problem that the labor of crushing becomes great.
【0019】[0019]
【作用】シリカを主成分とする無機質皮膜はフェニルシ
ラン系やフッ素系シランカップリング剤との反応性に富
むので、無機粉体がシリカを主成分とする無機質皮膜で
被覆され、さらに、フェニルシラン系及び/またはフッ
素系シランカップリング剤による表面処理が施されてい
るていることは、無機粉体とフッ素系樹脂との密着性を
向上させる働きをする。[Function] Since the silica-based inorganic coating is highly reactive with the phenylsilane-based or fluorine-based silane coupling agent, the inorganic powder is coated with the silica-based inorganic coating. The surface treatment with a system and / or fluorine-based silane coupling agent functions to improve the adhesion between the inorganic powder and the fluorine-based resin.
【0020】[0020]
【実施例】以下、本発明を実施例及び比較例に基づいて
説明する。EXAMPLES The present invention will be described below based on Examples and Comparative Examples.
【0021】(実施例1)まず、珪フッ化水素酸(H2
SiF6 :ナカライテスク社製)に水を加え、2モル/
lの水溶液を1000ml調製し、次いで、この水溶液
にSiO2 で20g相当のシリカゲルを入れ、シリカの
飽和溶液を得た。次いで、得られたシリカの飽和溶液を
35℃に加温した状態で、濃度0.5モル/lのほう酸
水溶液を5ml添加して、珪フッ化水素酸溶液中にシリ
カが過飽和となっている溶液を作製した。次いで、この
シリカが過飽和となっている溶液に、平均粒径2μm、
比誘電率104の酸化チタン粉体を100g投入し、そ
の後5時間放置して、酸化チタン粉体の表面にシリカを
主成分とする無機質皮膜を析出させた。その後、表面に
シリカを主成分とする無機質皮膜が形成された酸化チタ
ン粉体を、珪フッ化水素酸溶液から取り出し、十分乾燥
させた。Example 1 First, hydrosilicofluoric acid (H 2
SiF 6 (manufactured by Nacalai Tesque, Inc.) was added water to 2 mol /
1000 ml of an aqueous solution of 1 l was prepared, and 20 g of silica gel corresponding to SiO 2 was put into this aqueous solution to obtain a saturated solution of silica. Then, 5 ml of an aqueous solution of boric acid having a concentration of 0.5 mol / l was added in a state where the obtained saturated solution of silica was heated to 35 ° C., and the silica was supersaturated in the hydrosilicofluoric acid solution. A solution was made. Next, in a solution in which the silica is supersaturated, an average particle size of 2 μm,
100 g of titanium oxide powder having a relative dielectric constant of 104 was added, and then the mixture was left for 5 hours to deposit an inorganic film containing silica as a main component on the surface of the titanium oxide powder. Then, the titanium oxide powder having the surface on which the inorganic film containing silica as a main component was formed was taken out from the hydrofluoric acid solution and dried sufficiently.
【0022】上記手順により得られた表面にシリカを主
成分とする無機質皮膜が被覆された酸化チタン粉体99
重量部に対し、フェニルシラン系シランカップリング剤
(東芝シリコーン社製:TSL8173)を1重量部の
割合で用い、前記の湿式処理法によりカップリング剤処
理を行った。Titanium oxide powder 99 whose surface obtained by the above procedure is coated with an inorganic film containing silica as a main component.
A phenylsilane-based silane coupling agent (TSL8173 manufactured by Toshiba Silicone Co., Ltd.) was used at a ratio of 1 part by weight based on 1 part by weight, and the coupling agent treatment was performed by the wet treatment method described above.
【0023】カップリング剤処理を終えた上記の無機粉
体を、四フッ化エチレン樹脂(ダイキン工業社製:D−
2)と四フッ化エチレン−六フッ化プロピレン共重合体
樹脂(ダイキン工業社製:ND−1)を重量比で4:1
に混合したディスパージョン中に、フッ素系樹脂に対し
前記無機粉体が20体積%になるように配合して、混合
し、含浸用のワニスを作製した。The above inorganic powder that has been treated with the coupling agent is treated with a tetrafluoroethylene resin (D-
2) and a tetrafluoroethylene-hexafluoropropylene copolymer resin (manufactured by Daikin Industries, Ltd .: ND-1) in a weight ratio of 4: 1.
The inorganic powder was mixed in the dispersion mixed in 1) so that the content of the inorganic powder was 20% by volume with respect to the fluororesin, and the mixture was mixed to prepare a varnish for impregnation.
【0024】一方、ガラスクロスとしてはガラスクロス
98重量部に対し2重量部のフェニルシラン系シランカ
ップリング剤(東芝シリコーン社製:TSL8173)
を用いて表面処理された、Eガラスよりなる厚み100
μmの平織ガラスクロスを使用した。On the other hand, as the glass cloth, 2 parts by weight of a phenylsilane type silane coupling agent (manufactured by Toshiba Silicone Co .: TSL8173) is used for 98 parts by weight of the glass cloth.
Having a thickness of 100, which is surface-treated with
A μm plain woven glass cloth was used.
【0025】前記の含浸用のワニスをよく攪拌してか
ら、前記の平織ガラスクロスに含浸させ、370℃で焼
成しプリプレグを得た。このプリプレグ中のガラスクロ
スの重量割合は42重量%であった。得られたプリプレ
グを4枚重ね、さらにその上下面に銅箔(厚み18μ
m)を配し、温度400℃、圧力30kg/cm2 で6
0分間加圧成形して、両面銅張り積層板(複合誘電体)
を作製した。The above-mentioned impregnating varnish was thoroughly stirred, then impregnated into the above plain woven glass cloth and fired at 370 ° C. to obtain a prepreg. The weight ratio of the glass cloth in this prepreg was 42% by weight. Four prepregs obtained were stacked, and copper foil (thickness 18μ
m) is placed at a temperature of 400 ° C. and a pressure of 30 kg / cm 2 for 6
Double-sided copper-clad laminate (composite dielectric) after pressure molding for 0 minutes
Was produced.
【0026】(実施例2)実施例1において、シリカを
過飽和状態にした、珪フッ化水素酸溶液中に酸化チタン
粉体を放置する時間を3時間にした以外は、実施例1と
同様にして両面銅張り積層板を作製した。Example 2 The same as Example 1 except that the silica was supersaturated and the titanium oxide powder was allowed to stand in the hydrosilicofluoric acid solution for 3 hours. To prepare a double-sided copper-clad laminate.
【0027】(実施例3)実施例1において、シリカを
過飽和状態にした、珪フッ化水素酸溶液中に投入する無
機粉体として、比誘電率が100以上であるチタン酸ス
トロンチウムを用いた以外は、実施例1と同様にして両
面銅張り積層板を作製した。(Example 3) In Example 1, except that strontium titanate having a relative dielectric constant of 100 or more was used as the inorganic powder to be added to the hydrosilicofluoric acid solution in which silica was supersaturated. A double-sided copper-clad laminate was prepared in the same manner as in Example 1.
【0028】(実施例4)実施例1において、カップリ
ング剤として、フェニルシラン系シランカップリング剤
に変えて、フッ素系シランカップリング剤(東芝シリコ
ーン社製:TSL8233)を用いた以外は、実施例1
と同様にして両面銅張り積層板を作製した。なお、フッ
素系シランカップリング剤を無機粉体及びガラスクロス
のカップリング剤処理の両方の場合において使用した。(Example 4) Example 4 was carried out except that a fluorine-based silane coupling agent (TSL8233 manufactured by Toshiba Silicone Co., Ltd.) was used instead of the phenylsilane-based silane coupling agent as the coupling agent. Example 1
A double-sided copper-clad laminate was prepared in the same manner as. The fluorinated silane coupling agent was used in both cases of treating the inorganic powder and the glass cloth with the coupling agent.
【0029】(実施例5)実施例1において、下記のよ
うにして、表面にシリカを主成分とする無機質皮膜が形
成された酸化チタン粉体を得るようにした以外は、実施
例1と同様にして両面銅張り積層板を作製した。(Example 5) The same as Example 1 except that the titanium oxide powder having the inorganic coating film containing silica as the main component was formed on the surface in the following manner. Then, a double-sided copper-clad laminate was prepared.
【0030】無機質皮膜が形成された酸化チタン粉体を
得る方法として、まず、重量比で、シリコンテトラエト
キシド(ナカライテスク社製):水:メタノール:酢酸
が10:10:100:0.1となるように溶液を調製
し、次いで10分間攪拌してシリコンテトラエトキシド
を加水分解させ、シリコンアルコキシドを加水分解させ
た処理液を作製した。次に、この処理液に実施例1で使
用したものと同じ酸化チタン粉体を100g投入して、
15分間攪拌した後、酸化チタン粉体を取り出し、十分
に風乾し、次いで得られた処理された酸化チタン粉体を
500℃で2時間加熱処理して、表面にシリカを主成分
とする無機質皮膜が形成された酸化チタン粉体を得るよ
うにした。As a method for obtaining a titanium oxide powder on which an inorganic film is formed, first, in a weight ratio, silicon tetraethoxide (manufactured by Nacalai Tesque, Inc.): Water: methanol: acetic acid is 10: 10: 100: 0.1. A solution was prepared so as to be as follows, and then stirred for 10 minutes to hydrolyze silicon tetraethoxide to prepare a treatment liquid in which silicon alkoxide was hydrolyzed. Next, 100 g of the same titanium oxide powder as that used in Example 1 was added to this treatment liquid,
After stirring for 15 minutes, the titanium oxide powder was taken out, sufficiently dried in air, and then the obtained treated titanium oxide powder was heat-treated at 500 ° C. for 2 hours to form an inorganic film containing silica as a main component on the surface. Thus, a titanium oxide powder in which is formed is obtained.
【0031】(実施例6)実施例5において、シリコン
アルコキシドを加水分解させた処理液の調製を、重量比
で、シリコンテトラエトキシド(ナカライテスク社
製):水:メタノール:酢酸が20:10:100:
0.1となるように調製した以外は、実施例5と同様に
して両面銅張り積層板を作製した。(Example 6) In Example 5, the treatment liquid obtained by hydrolyzing the silicon alkoxide was prepared in a weight ratio of silicon tetraethoxide (manufactured by Nacalai Tesque): water: methanol: acetic acid 20:10. : 100:
A double-sided copper-clad laminate was produced in the same manner as in Example 5 except that the thickness was adjusted to 0.1.
【0032】(比較例1)実施例1における、酸化チタ
ン粉体に、シリカを主成分とする無機質皮膜を被覆する
工程を省略し、酸化チタン粉体にフェニルシラン系シラ
ンカップリング剤を用いて直接カップリング剤処理を行
うようにした以外は、実施例1と同様にして両面銅張り
積層板を作製した。(Comparative Example 1) The step of coating the titanium oxide powder with the inorganic coating containing silica as the main component in Example 1 was omitted, and the phenylsilane silane coupling agent was used for the titanium oxide powder. A double-sided copper-clad laminate was produced in the same manner as in Example 1 except that the coupling agent treatment was directly carried out.
【0033】(比較例2)実施例4における、酸化チタ
ン粉体に、シリカを主成分とする無機質皮膜を被覆する
工程を省略し、酸化チタン粉体にフッ素系シランカップ
リング剤を用いて直接直接カップリング剤処理を行うよ
うにした以外は、実施例4と同様にして両面銅張り積層
板を作製した。(Comparative Example 2) The step of coating the titanium oxide powder with the inorganic film containing silica as the main component in Example 4 was omitted, and the titanium oxide powder was directly coated with a fluorine-based silane coupling agent. A double-sided copper-clad laminate was produced in the same manner as in Example 4 except that the coupling agent treatment was directly carried out.
【0034】(比較例3)実施例1における、表面にシ
リカを主成分とする無機質皮膜が形成された酸化チタン
粉体に対するシランカップリング剤を用いたカップリン
グ剤処理を施さないようにした以外は、実施例1と同様
にして両面銅張り積層板を作製した。(Comparative Example 3) In Example 1, except that the titanium oxide powder on the surface of which an inorganic film containing silica as a main component was formed was not treated with a coupling agent using a silane coupling agent. A double-sided copper-clad laminate was prepared in the same manner as in Example 1.
【0035】(比較例4)実施例1において、表面にシ
リカを主成分とする無機質皮膜が形成された酸化チタン
粉体に対するカップリング剤処理のカップリング剤とし
て、フェニルシラン系シランカップリング剤に変えて、
エポキシシラン系シランカップリング剤(東芝シリコー
ン社製:TS8350)を用いた以外は、実施例1と同
様にして両面銅張り積層板を作製した。なお、ガラスク
ロスのカップリング剤処理は実施例1と同様にフェニル
シラン系シランカップリング剤を使用した。(Comparative Example 4) In Example 1, a phenylsilane-based silane coupling agent was used as a coupling agent for treating the titanium oxide powder on the surface of which an inorganic film containing silica as a main component was formed. change,
A double-sided copper-clad laminate was produced in the same manner as in Example 1 except that an epoxysilane-based silane coupling agent (TS8350 manufactured by Toshiba Silicone Co., Ltd.) was used. For the treatment of the glass cloth with the coupling agent, a phenylsilane-based silane coupling agent was used as in Example 1.
【0036】上記のようにして、実施例及び比較例で得
られた各両面銅張り積層板について135℃、3気圧
(蒸気圧)、2時間のPCT処理(吸湿処理)前後の比
誘電率及び誘電正接を測定し、得られた結果を表1及び
表2に示す。なお、比誘電率及び誘電正接の測定は測定
周波数fを1KHz及び3GHzとして行った。As described above, the relative permittivity before and after the PCT treatment (moisture absorption treatment) at 135 ° C., 3 atm (vapor pressure) and 2 hours for each double-sided copper-clad laminate obtained in Examples and Comparative Examples The dielectric loss tangent was measured, and the obtained results are shown in Tables 1 and 2. The relative permittivity and the dielectric loss tangent were measured at measurement frequencies f of 1 KHz and 3 GHz.
【0037】[0037]
【表1】 [Table 1]
【0038】[0038]
【表2】 [Table 2]
【0039】表1及び表2にみるように、実施例の銅張
り積層板は、比較例のものに比べて、特に誘電正接の値
のPCT処理(吸湿処理)前後の変化が非常に少なく安
定していて、耐湿性が向上していることが確認された。As can be seen from Tables 1 and 2, the copper clad laminates of the Examples are stable with very little change in the value of the dielectric loss tangent before and after the PCT treatment (moisture absorption treatment) as compared with the Comparative Examples. It was confirmed that the moisture resistance was improved.
【0040】[0040]
【発明の効果】以上述べたように、本発明に係る複合誘
電体では、比誘電率が20以上である無機粉体が、シリ
カを主成分とする無機質皮膜で被覆され、さらに、フェ
ニルシラン系及び/またはフッ素系シランカップリング
剤による表面処理が施されているので、本発明によれば
比誘電率が20以上である無機粉体、フッソ系樹脂及び
無機繊維基材からなる複合誘電体であって、かつ、吸湿
処理による誘電正接の変化が少ない、すなわち、耐湿性
が向上していて、プリント回路基板等の用途において有
用な複合誘電体が得られる。As described above, in the composite dielectric material according to the present invention, the inorganic powder having a relative dielectric constant of 20 or more is coated with an inorganic film containing silica as a main component, and further, a phenylsilane-based material. According to the present invention, since a surface treatment with a fluorine-based silane coupling agent is carried out, a composite dielectric material comprising an inorganic powder having a relative dielectric constant of 20 or more, a fluorine-based resin and an inorganic fiber substrate is used. In addition, there is little change in the dielectric loss tangent due to the moisture absorption treatment, that is, the moisture resistance is improved, and a composite dielectric useful in applications such as a printed circuit board can be obtained.
【0041】また、本発明に係る複合誘電体の製造方法
によれば、上記のプリント回路基板等の用途において有
用な複合誘電体が製造できる。Further, according to the method for producing a composite dielectric of the present invention, a composite dielectric useful in the above-mentioned applications such as a printed circuit board can be produced.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山河 清志郎 大阪府門真市大字門真1048番地松下電工株 式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Kiyoshiro Yamakawa 1048, Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Works Co., Ltd.
Claims (4)
ッ素系樹脂及び無機繊維基材からなる複合誘電体におい
て、無機粉体が、シリカを主成分とする無機質皮膜で被
覆され、さらに、フェニルシラン系及び/またはフッ素
系シランカップリング剤による表面処理が施されている
無機粉体であることを特徴とする複合誘電体。1. A composite dielectric comprising an inorganic powder having a relative dielectric constant of 20 or more, a fluororesin and an inorganic fiber substrate, wherein the inorganic powder is coated with an inorganic film containing silica as a main component, A composite dielectric, which is an inorganic powder that has been surface-treated with a phenylsilane-based and / or fluorine-based silane coupling agent.
を特徴とする請求項1記載の複合誘電体。2. The composite dielectric according to claim 1, wherein the inorganic powder is a titanium-based inorganic powder.
体表面に析出させて、シリカを主成分とする無機質皮膜
を形成することを特徴とする請求項1または請求項2記
載の複合誘電体の製造方法。3. The composite dielectric according to claim 1, wherein silica is deposited on the surface of the inorganic powder from a supersaturated solution of silica to form an inorganic film containing silica as a main component. Production method.
なる処理液で無機粉体を処理し、次いで300〜100
0℃の範囲内の温度で加熱処理して、シリカを主成分と
する無機質皮膜を形成することを特徴とする請求項1ま
たは請求項2記載の複合誘電体の製造方法。4. An inorganic powder is treated with a treatment liquid obtained by hydrolyzing a silicon alkoxide, and then 300 to 100.
The method for producing a composite dielectric according to claim 1 or 2, wherein heat treatment is performed at a temperature in the range of 0 ° C to form an inorganic film containing silica as a main component.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2777494A JPH07240117A (en) | 1994-02-25 | 1994-02-25 | Composite dielectric and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2777494A JPH07240117A (en) | 1994-02-25 | 1994-02-25 | Composite dielectric and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07240117A true JPH07240117A (en) | 1995-09-12 |
Family
ID=12230329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2777494A Withdrawn JPH07240117A (en) | 1994-02-25 | 1994-02-25 | Composite dielectric and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07240117A (en) |
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