JPH0722646A - LED with current blocking layer - Google Patents
LED with current blocking layerInfo
- Publication number
- JPH0722646A JPH0722646A JP16269793A JP16269793A JPH0722646A JP H0722646 A JPH0722646 A JP H0722646A JP 16269793 A JP16269793 A JP 16269793A JP 16269793 A JP16269793 A JP 16269793A JP H0722646 A JPH0722646 A JP H0722646A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- current blocking
- light
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000903 blocking effect Effects 0.000 title claims abstract description 19
- 238000000605 extraction Methods 0.000 claims description 9
- 238000005253 cladding Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H20/8162—Current-blocking structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Landscapes
- Led Devices (AREA)
Abstract
(57)【要約】 （修正有）
【目的】 従来より発光出力に優れたＬＥＤを得る。
【構成】 活性層３と同一面内の活性層周囲に、電流狭
窄のための電流ブロック層４を設けたことを特徴とする
発光ダイオード。
(57) [Summary] (Correction) [Purpose] To obtain an LED that is superior in light emission output. A light emitting diode, characterized in that a current blocking layer 4 for current confinement is provided around the active layer in the same plane as the active layer 3.
Description
【０００１】[0001]
【発明の利用分野】本発明は発光ダイオードに関する。FIELD OF THE INVENTION This invention relates to light emitting diodes.
【０００２】[0002]
【従来の技術】発光ダイオードは、消費電力や発熱が小
さく、また小型化に有利であるため、各種の用途に使用
されている。そして求められる製品としては、より小さ
くかつ発光出力の大きいものが求められている。この為
近年発光ダイオードの発光出力を向上させるため、種々
の方法が考案されている。例えば活性層の反対側に、ブ
ラッグ反射膜を設けたり、或いは電極の直下に電流ブロ
ック層を設けて、活性層から発した光が電極により遮ら
れてしまうことを避けたり、或いは樹脂封止して、ＬＥ
Ｄ表面での全反射による損失を抑える等の手法が行われ
ている。2. Description of the Related Art A light emitting diode consumes less power and generates less heat and is advantageous for miniaturization, and is therefore used for various purposes. Further, as a required product, a product having a smaller size and a larger light emission output is required. Therefore, in recent years, various methods have been devised in order to improve the light emission output of the light emitting diode. For example, a Bragg reflection film is provided on the opposite side of the active layer, or a current blocking layer is provided directly under the electrode to prevent light emitted from the active layer from being blocked by the electrode, or resin-sealed. LE
Techniques such as suppressing loss due to total reflection on the D surface have been performed.
【０００３】例えば図２に示す構造は、活性層３より光
取り出し側で、電極６の直下に電流ブロック層４を設
け、電極６の直下で発光したために電極６に遮られて外
に出られない光を減らす工夫をしたＬＥＤの一例であ
る。又図３に示す構造は、ブラッグ反射膜８を設けた場
合の構造の１例を示す説明図である。For example, in the structure shown in FIG. 2, the current blocking layer 4 is provided directly below the electrode 6 on the light extraction side of the active layer 3, and since light is emitted directly below the electrode 6, it is shielded by the electrode 6 and goes out. This is an example of an LED designed to reduce the amount of light that does not exist. Further, the structure shown in FIG. 3 is an explanatory diagram showing an example of the structure when the Bragg reflection film 8 is provided.
【０００４】[0004]
【発明が解決すべき課題】しかしながら依然としてＬＥ
Ｄの発光出力の向上を求める声は大きく、より一層の改
善が求められていた。However, it is still LE
There is a great demand for improvement in the emission output of D, and further improvement has been required.
【０００５】[0005]
【課題を解決するための手段】そこで本発明者らは、鋭
意研究の結果、かかる課題が、活性層と同一面内の活性
層周囲に、電流ブロック層を設けることにより、かかる
課題が解決することを見出し、本発明に到達した。すな
わち本発明の目的は、発光出力の向上したＬＥＤを提供
することにあり、かかる目的は、活性層と同一面内の活
性層周囲に、電流狭窄のための電流ブロック層を設けた
ことを特徴とする発光ダイオード、好ましくは光取り出
し側の表面電極の平面パターンが、表面側から見て電流
ブロック層のみ覆い隠すように存在する前記発光ダイオ
ード、より好ましくは該活性層からみて、光取り出し側
の反対側に、ブラッグ反射膜を設けた前記発光ダイオー
ド、により容易に達成される。As a result of earnest research, the present inventors have solved this problem by providing a current blocking layer around the active layer in the same plane as the active layer. The inventors have found that and reached the present invention. That is, an object of the present invention is to provide an LED having improved light emission output, and an object of the present invention is to provide a current blocking layer for current confinement around the active layer in the same plane as the active layer. And a light emitting diode, preferably the plane pattern of the surface electrode on the light extraction side is present so as to cover only the current blocking layer when viewed from the surface side, and more preferably, the light extraction side on the light extraction side when viewed from the active layer. This is easily achieved by the light emitting diode provided with a Bragg reflection film on the opposite side.
【０００６】以下本発明を詳細に説明する。本発明のＬ
ＥＤの典型的な構造の一例を図１に示し、これに基づい
て本発明を説明する。本発明のＬＥＤは、基板１上に、
クラッド層２、活性層３、そして活性層３の両端に電流
ブロック層４、その上にクラッド層５と電極６を有す
る。そして基板１の下にも電極７を付ける。The present invention will be described in detail below. L of the present invention
An example of a typical structure of the ED is shown in FIG. 1, and the present invention will be described based on this. The LED of the present invention, on the substrate 1,
The clad layer 2, the active layer 3, and the current blocking layer 4 at both ends of the active layer 3, and the clad layer 5 and the electrode 6 thereon. Then, the electrode 7 is attached below the substrate 1.
【０００７】本発明の構造は、特にその材質を問わない
が、通常ＩＩＩ−Ｖ族化合物、ＩＩ−ＶＩ族化合物系の
ものが用いられる。ＩＩＩ−Ｖ族化合物としては、Ｇａ
Ａｓ系、ＧａＰ系、等がよく使用され、ＩＩ−ＶＩ族化
合物としては、ＺｎＳｅ系のものがよく使用される。以
下においては、便宜上ＩＩＩ−Ｖ族化合物にて本発明の
構造のＬＥＤを作製する場合について説明するが、それ
以外の例えばＩＩ−ＶＩ族化合物についても、同様に作
製出来ることはいうまでもない。The structure of the present invention is not particularly limited in its material, but a III-V group compound or a II-VI group compound is usually used. As the III-V group compound, Ga
As-based, GaP-based, etc. are often used, and ZnSe-based compounds are often used as the II-VI group compounds. In the following, a case where an LED having the structure of the present invention is manufactured using a III-V group compound will be described for the sake of convenience, but it goes without saying that, for example, other II-VI group compounds can also be manufactured in the same manner.
【０００８】基板１は、通常ＧａＡｓ又はＧａＰ基板が
用いられ、その導電型は通常ｎ型である。その上にクラ
ッド層２を成長させるが、この層の組成は、ＡｌＧａＡ
ｓが一般的であり、導電型は、基板１と同一であればよ
い。クラッド層のアルミとガリウムの組成比は、活性層
の組成により変化し、活性層のアルミの量が多いとクラ
ッド層も多くなる。この具体的な組成については、バン
ドギャップを考慮して決定すればよい。通常この構造の
厚さが０．１〜５０μｍであり、好ましくは１０μｍ以
下である。ドーパントは特に限定されず、セレン、シリ
コン等が使用されるが、成長の制御性がよい、シリコン
が好ましい。The substrate 1 is usually a GaAs or GaP substrate, and its conductivity type is usually n-type. A clad layer 2 is grown on it, and the composition of this layer is AlGaA.
s is general, and the conductivity type may be the same as that of the substrate 1. The composition ratio of aluminum to gallium in the clad layer changes depending on the composition of the active layer, and if the amount of aluminum in the active layer is large, the amount of the clad layer is also large. The specific composition may be determined in consideration of the band gap. Usually, the thickness of this structure is 0.1 to 50 μm, preferably 10 μm or less. The dopant is not particularly limited, and selenium, silicon, or the like is used, but silicon is preferable because it has good growth controllability.
【０００９】そして本発明のより好ましい実施態様とし
ては、クラッド層２中に、ブラッグ反射層を設けること
である。ブラッグ反射層とは、屈折率の異なる物質を、
その屈折率と反射したい光の波長によって定まる膜厚で
交互に重ねたもので、光を反射する性質を持っている。
これにより、光取り出し側に光を反射させることができ
るので、発光効率を向上させることができる。As a more preferred embodiment of the present invention, a Bragg reflection layer is provided in the cladding layer 2. The Bragg reflection layer is made of materials with different refractive indices.
The layers are stacked alternately with a film thickness determined by the refractive index and the wavelength of the light to be reflected, and have the property of reflecting light.
As a result, the light can be reflected to the light extraction side, so that the luminous efficiency can be improved.
【００１０】そしてクラッド層２上に活性層３を積層す
る。活性層３の導電型は、通常ｐ型であり、バンドギャ
ップはクラッド層２より小なるものを用いるのが一般的
である。例えばクラッド層がＡｌ0.5 Ｇａ0.5 Ａｓであ
れば、ＺｎドープＧａＡｓでキャリア濃度が２×１０17
〜８×１０17ｃｍ-3程度のものを０．３〜２μｍ程度積
層すればよい。Then, the active layer 3 is laminated on the clad layer 2. The conductivity type of the active layer 3 is usually p-type, and it is common to use one having a bandgap smaller than that of the cladding layer 2. For example, if the cladding layer is Al 0.5 Ga 0.5 As, the carrier concentration is 2 × 10 17 with Zn-doped GaAs.
What is about 8 × 10 17 cm −3 may be laminated by about 0.3 to 2 μm.
【００１１】活性層３の周囲にはキャリア濃度が低く、
高抵抗の層を電流ブロック層４として積層する。ＧａＡ
ｓ系の材料であれば、Ａｌの濃度が高い間接遷移型のｉ
型ＡｌＧａＡｓ層を設けるのが好ましい。ＡｌとＧａの
組成としては、クラッド層２又はクラッド層５で用いた
ものと同じであってかまわない。そしてドーパントを故
意に添加しないｉ型であることが好ましい。その厚さ
は、活性層３より厚いことが好ましく、具体的な厚みと
しては、１〜８μｍ程度である。この時、例えばＡｌＧ
ａＡｓ層であれば、屈折率の関係より、光の閉じ込め効
果も得られる。The carrier concentration around the active layer 3 is low,
A high resistance layer is laminated as the current blocking layer 4. GaA
If it is an s-based material, the indirect transition type i with high Al concentration
A type AlGaAs layer is preferably provided. The composition of Al and Ga may be the same as that used in the cladding layer 2 or the cladding layer 5. And it is preferable that the dopant is an i-type in which a dopant is not intentionally added. Its thickness is preferably thicker than that of the active layer 3, and its specific thickness is about 1 to 8 μm. At this time, for example, AlG
With the aAs layer, the effect of confining light can be obtained due to the relationship of the refractive index.
【００１２】そして活性層３、電流ブロック層４の上
に、クラッド層５が積層される。クラッド層５は、クラ
ッド層２と反対の導電型であり、通常ｐ型である。クラ
ッド層５の組成は、ドーパントを除けばクラッド層２と
同じものを用いても構わないが、活性層のバンドギャッ
プより大きいバンドギャップを有するものであればよ
い。本件の場合、Ａｌ0.5 Ｇａ0.5 Ａｓでドーパントは
Ｚｎ、その濃度は５×１０ 18〜３×１０19ｃｍ-3程度で
ある。厚さは光取り出しに支障がない範囲で任意に選べ
ばよく、通常０．５〜５０μｍ程度が用いられる。On the active layer 3 and the current blocking layer 4,
Then, the clad layer 5 is laminated. The clad layer 5 is a
The conductivity type is opposite to that of the pad layer 2, and is usually p-type. Kura
The composition of the pad layer 5 is the same as that of the cladding layer 2 except for the dopant.
The same one may be used, but the band gap of the active layer is
If it has a band gap larger than
Yes. In this case, Al0.5Ga0.5As is the dopant
Zn, the concentration is 5 × 10 18~ 3 x 1019cm-3To a degree
is there. Any thickness can be selected as long as it does not interfere with light extraction.
However, it is usually about 0.5 to 50 μm.
【００１３】クラッド層５の上には電極６を設置する。
このとき電極６は、活性層３で発生した光を遮らないよ
う、電流ブロック層４の上にのみ存在しているようにす
ることが好ましい。尚、光を取り出さない側の電極７に
関しては、かかる制限がないことは言うまでもない。
又、クラッド層５と電極６の間に、光取り出し層を設け
る等の付加的手法を併用してもよい。An electrode 6 is provided on the clad layer 5.
At this time, it is preferable that the electrode 6 exists only on the current blocking layer 4 so as not to block the light generated in the active layer 3. Needless to say, the electrode 7 on the side from which light is not extracted has no such limitation.
Further, an additional method such as providing a light extraction layer between the clad layer 5 and the electrode 6 may be used together.
【００１４】本発明の構造の製造方法としては、ＬＰＥ
法、ＭＯＣＶＤ法、ＶＰＥ法、ＭＯＶＰＥ法、ＭＢＥ法
等種々の方法が適用できるが、ブラッグ反射膜を用いる
場合には、ＭＢＥ法又はＭＯＣＶＤ法が好ましい。各層
の成長順序としては、本発明の構造が作れればよいの
で、限定はされないが、その一例を挙げると、まず基板
上に、クラッド層２、活性層３を成長させた後、ＳｉＮ
X をしかるべき方法で成長させ、活性層を残す部分だけ
に、フォトリソグラフィー法等によりマスキングし、マ
スクされなかったＳｉＮX をエッチングする。さらに別
のエッチング方法により、クラッド層２の一部を除去す
るまでエッチングする。As a method of manufacturing the structure of the present invention, LPE is used.
Although various methods such as a CVD method, a MOCVD method, a VPE method, a MOVPE method, and an MBE method can be applied, the MBE method or the MOCVD method is preferable when a Bragg reflection film is used. The growth order of the layers is not limited as long as the structure of the present invention can be formed, but one example thereof is, first, the clad layer 2 and the active layer 3 are grown on the substrate, and then the SiN is grown.
X is grown by an appropriate method, and only the portion where the active layer is left is masked by photolithography or the like, and unmasked SiN X is etched. Etching is performed by another etching method until a part of the cladding layer 2 is removed.
【００１５】続いて電流ブロック層４を成長させる。こ
の時、電流ブロック層４がマスク上にポリクリスタル
（多結晶）の析出が起こり易いアルミニウムや亜鉛の多
い組成である場合には、成長原料ガスと同時にハライド
ガス等を流すとポリクリスタルの発生を防ぐので好まし
い。電流ブロック層４の成長が終わった後、マスクを除
去し、再びクラッド層５を所望の厚さに成長させ、本発
明の構造を得ることができる。Subsequently, the current blocking layer 4 is grown. At this time, when the current block layer 4 has a composition containing a large amount of aluminum or zinc in which polycrystal (polycrystal) is likely to be deposited on the mask, when a halide gas or the like is supplied at the same time as the growth source gas, polycrystal is generated. It is preferable because it prevents it. After the growth of the current blocking layer 4 is completed, the mask is removed, and the cladding layer 5 is grown again to a desired thickness to obtain the structure of the present invention.
【００１６】以下本発明を実施例を用いて説明するが、
本発明はその要旨を越えない限り、実施例に限定される
ものではない。 （実施例）ｎ型ＧａＡｓ基板上に第１クラッド層として
ｎ型シリコンドープＡｌ0.5 Ｇａ 0.5 Ａｓ（キャリア濃
度５×１０18ｃｍ-3）を１０μｍ成長させた。この途中
でブラッグ反射膜として、Ａｌ0.1 Ｇａ0.9 ＡｓとＡｌ
Ａｓを１０ペア（対）重ねた。そして第１クラッド層の
上に活性層としてｐ型ＺｎドープＧａＡｓ（キャリア濃
度５×１０17ｃｍ-3）を１μｍ成長させた。こののちフ
ォトリソグラフィー法により、活性層を残す部分とし
て、各ＬＥＤの中心の１００μｍをＳｉＮX でマスキン
グしてからエッチングを行った。次いで電流ブロック層
としてアンドープＡｌ0.5 Ｇａ0.5 Ａｓを５μｍ成長さ
せ、続いてｐ型の第２クラッド層として、ｐ型Ａｌ0.5
Ｇａ0.5 Ａｓ（キャリア濃度３×１０19ｃｍ-3）を活性
層上の厚さで２０μｍ成長させた。その後、電極の平面
パターンを電極が電流ブロック層の上のみに覆い被さる
ように設置した。このＬＥＤの通電電流と光出力特性の
関係を図４に示す。 （比較例）電流ブロック層を設けない以外は、実施例と
同様の構造のＬＥＤを作成した。この構造は図３に示し
た構造と同様である。このＬＥＤの通電電流と光出力特
性の関係を図４に示す。The present invention will be described below with reference to examples.
The present invention is limited to the examples unless it exceeds the gist.
Not a thing. (Example) As a first cladding layer on an n-type GaAs substrate
n-type silicon-doped Al0.5Ga 0.5As (carrier concentration
5 × 1018cm-310 μm was grown. On the way
As a Bragg reflection film, Al0.1Ga0.9As and Al
10 pairs of As were superposed. And of the first cladding layer
The p-type Zn-doped GaAs (carrier concentration
5 × 1017cm-3) Was grown to 1 μm. After this
By photolithography method, leave the active layer
100 μm at the center of each LED isXIn Muskin
After etching, etching was performed. Then current blocking layer
As undoped Al0.5Ga0.5As grown by 5 μm
Then, as a p-type second cladding layer, p-type Al is formed.0.5
Ga0.5As (carrier concentration 3 × 1019cm-3) Activated
It was grown to a thickness of 20 μm on the layers. Then the plane of the electrode
The electrode covers the pattern only on the current blocking layer
Was installed. Of the current and light output characteristics of this LED
The relationship is shown in FIG. (Comparative Example) Except that the current blocking layer was not provided,
An LED having a similar structure was produced. This structure is shown in Figure 3.
The structure is the same. This LED current and light output characteristics
The sex relationship is shown in FIG.
【００１７】以上の結果より、光出力を約１．５倍にす
ることができた。From the above results, the light output could be increased about 1.5 times.
【００１８】[0018]
【発明の効果】本発明の構造により、従来より発光出力
の優れたＬＥＤを得ることができた。With the structure of the present invention, it is possible to obtain an LED which is superior in light emission output than before.
【図１】本発明の構造の一例を示す説明図である。FIG. 1 is an explanatory diagram showing an example of a structure of the present invention.
【図２】従来のＬＥＤの構造の一例を示す説明図であ
る。FIG. 2 is an explanatory diagram showing an example of the structure of a conventional LED.
【図３】従来のＬＥＤの構造の一例を示す説明図であ
る。FIG. 3 is an explanatory diagram showing an example of a structure of a conventional LED.
【図４】本発明の構造と従来の構造のＬＥＤの光出力の
比較を示す図である。FIG. 4 is a diagram showing a comparison of the light output of the LED of the structure of the present invention and the LED of the conventional structure.
１：基板 ２：クラッド層 ３：活性層 ４：電流ブロ
ック層 ５：クラッド層 ６：電極 ７：電極 ８：ブラッグ反射膜1: Substrate 2: Cladding layer 3: Active layer 4: Current blocking layer 5: Cladding layer 6: Electrode 7: Electrode 8: Bragg reflection film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 野口 雅弘 茨城県牛久市東猯穴町1000番地 三菱化成 株式会社筑波工場内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Masahiro Noguchi 1000, Higashihuinana-cho, Ushiku-shi, Ibaraki Mitsubishi Kasei Corporation Tsukuba factory
Claims (3)
窄のための電流ブロック層を設けたことを特徴とする発
光ダイオード。1. A light-emitting diode comprising a current blocking layer for current constriction provided around the active layer in the same plane as the active layer.
が、表面側から見て電流ブロック層のみ覆い隠すように
設けられている請求項１記載の発光ダイオード。2. The light emitting diode according to claim 1, wherein the plane pattern of the surface electrode on the light extraction side is provided so as to cover only the current blocking layer when viewed from the surface side.
に、ブラッグ反射膜を設けた請求項１記載の発光ダイオ
ード。3. The light emitting diode according to claim 1, further comprising a Bragg reflection film on the side opposite to the light extraction side as viewed from the active layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16269793A JPH0722646A (en) | 1993-06-30 | 1993-06-30 | LED with current blocking layer |
| GB9412937A GB2280061A (en) | 1993-06-30 | 1994-06-28 | Light emitting device |
| DE4422660A DE4422660A1 (en) | 1993-06-30 | 1994-06-28 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16269793A JPH0722646A (en) | 1993-06-30 | 1993-06-30 | LED with current blocking layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0722646A true JPH0722646A (en) | 1995-01-24 |
Family
ID=15759586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16269793A Pending JPH0722646A (en) | 1993-06-30 | 1993-06-30 | LED with current blocking layer |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0722646A (en) |
| DE (1) | DE4422660A1 (en) |
| GB (1) | GB2280061A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6570189B1 (en) * | 1999-03-03 | 2003-05-27 | Oki Electric Industry Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP2007221175A (en) * | 2007-06-04 | 2007-08-30 | Toshiba Corp | Semiconductor light emitting element and semiconductor light emitting device |
| JP2009246051A (en) * | 2008-03-28 | 2009-10-22 | Kyocera Corp | Light-emitting device and method of manufacturing the same |
| WO2011096283A1 (en) | 2010-02-08 | 2011-08-11 | サントリーホールディングス株式会社 | Coffee aroma-containing composition |
| KR20150034882A (en) | 2013-09-26 | 2015-04-06 | 주식회사 엘지화학 | Gas-liquid device |
| WO2018123159A1 (en) | 2016-12-27 | 2018-07-05 | サントリーホールディングス株式会社 | Pericarp extract and manufacturing method therefor |
| WO2018203484A1 (en) | 2017-05-01 | 2018-11-08 | サントリーホールディングス株式会社 | Collection of aroma component from citrus peel |
| US10981081B2 (en) | 2016-12-27 | 2021-04-20 | Hanwha Chemical Corporation | Distillation apparatus |
| KR20210054338A (en) | 2019-11-05 | 2021-05-13 | 한화솔루션 주식회사 | distillation apparatus |
| KR20210054317A (en) | 2019-11-05 | 2021-05-13 | 한화솔루션 주식회사 | distillation apparatus |
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Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2386907A1 (en) * | 1977-04-06 | 1978-11-03 | Radiotechnique Compelec | Electroluminescent semiconductor for fibre-optics - has annular quasi isolating region controlling current density in active area of pn junction |
| NL8602653A (en) * | 1986-10-23 | 1988-05-16 | Philips Nv | SEMICONDUCTOR LASER AND METHOD OF MANUFACTURE THEREOF. |
| US4928285A (en) * | 1988-02-23 | 1990-05-22 | Kabushiki Kaisha Toshiba | Impurity-doped semiconductor laser device for single wavelength oscillation |
| US5182757A (en) * | 1990-09-12 | 1993-01-26 | Seiko Epson Corporation | Surface emission type semiconductor laser |
| US5063569A (en) * | 1990-12-19 | 1991-11-05 | At&T Bell Laboratories | Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces |
| EP0531542B1 (en) * | 1991-03-28 | 1996-01-10 | Seiko Epson Corporation | Surface emitting type semiconductor laser and its fabrication method |
| US5226053A (en) * | 1991-12-27 | 1993-07-06 | At&T Bell Laboratories | Light emitting diode |
| US5212702A (en) * | 1992-03-25 | 1993-05-18 | At&T Bell Laboratories | Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output |
-
1993
- 1993-06-30 JP JP16269793A patent/JPH0722646A/en active Pending
-
1994
- 1994-06-28 DE DE4422660A patent/DE4422660A1/en not_active Withdrawn
- 1994-06-28 GB GB9412937A patent/GB2280061A/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6570189B1 (en) * | 1999-03-03 | 2003-05-27 | Oki Electric Industry Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP2007221175A (en) * | 2007-06-04 | 2007-08-30 | Toshiba Corp | Semiconductor light emitting element and semiconductor light emitting device |
| JP4625827B2 (en) * | 2007-06-04 | 2011-02-02 | 株式会社東芝 | Semiconductor light emitting device and semiconductor light emitting device |
| JP2009246051A (en) * | 2008-03-28 | 2009-10-22 | Kyocera Corp | Light-emitting device and method of manufacturing the same |
| WO2011096283A1 (en) | 2010-02-08 | 2011-08-11 | サントリーホールディングス株式会社 | Coffee aroma-containing composition |
| KR20150034882A (en) | 2013-09-26 | 2015-04-06 | 주식회사 엘지화학 | Gas-liquid device |
| WO2018123159A1 (en) | 2016-12-27 | 2018-07-05 | サントリーホールディングス株式会社 | Pericarp extract and manufacturing method therefor |
| US10981081B2 (en) | 2016-12-27 | 2021-04-20 | Hanwha Chemical Corporation | Distillation apparatus |
| WO2018203484A1 (en) | 2017-05-01 | 2018-11-08 | サントリーホールディングス株式会社 | Collection of aroma component from citrus peel |
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Also Published As
| Publication number | Publication date |
|---|---|
| GB2280061A (en) | 1995-01-18 |
| DE4422660A1 (en) | 1995-02-09 |
| GB9412937D0 (en) | 1994-08-17 |
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