JPH07215798A - Aluminum garnet crystal film - Google Patents
Aluminum garnet crystal filmInfo
- Publication number
- JPH07215798A JPH07215798A JP2364394A JP2364394A JPH07215798A JP H07215798 A JPH07215798 A JP H07215798A JP 2364394 A JP2364394 A JP 2364394A JP 2364394 A JP2364394 A JP 2364394A JP H07215798 A JPH07215798 A JP H07215798A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- crystal
- elements
- aluminum garnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 74
- 239000002223 garnet Substances 0.000 title claims abstract description 62
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 47
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 5
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 4
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 3
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims description 41
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052742 iron Chemical group 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical group [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical group [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000155 melt Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 239000007791 liquid phase Substances 0.000 description 8
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000001902 propagating effect Effects 0.000 description 6
- 238000006467 substitution reaction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 101000574352 Mus musculus Protein phosphatase 1 regulatory subunit 17 Proteins 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光通信および光情報処
理分野で利用される光導波路に用いることができるアル
ミニウムガーネット結晶膜に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an aluminum garnet crystal film that can be used in an optical waveguide used in the fields of optical communication and optical information processing.
【０００２】[0002]
【従来の技術および課題】イットリウムアルミニウムガ
ーネット（以下ＹＡＧと呼ぶ）は、光通信波長域である
赤外域における光吸収が小さく、光通信に用いる導波路
材料として期待されている。導波路材料に用いるために
は、屈折率制御と格子整合を同時に満足することが必要
であるが、従来技術ではそれができなかったために、実
用に供されていない。2. Description of the Related Art Yttrium aluminum garnet (hereinafter referred to as YAG) has small light absorption in the infrared region, which is the wavelength range of optical communication, and is expected as a waveguide material used for optical communication. In order to use it as a waveguide material, it is necessary to satisfy both the refractive index control and the lattice matching at the same time, but it has not been put to practical use because the prior art could not do so.
【０００３】従来は、基板に対して膜の屈折率を上昇さ
せるのに十分な量の元素を添加すると、基板と膜との格
子定数差が大きくなり、結晶成長の際にクラッキングが
生じたり、たとえ結晶成長しても伝搬損失が大きくな
り、実用に供する３ｄＢ／ｃｍ以下という値にならなか
ったりと、導波路としての性質を満たすのには十分でな
かった。また、格子定数を合わせようとすると、屈折率
差をわずかしかつけることができず、従って、屈折率の
制御をすることができず、導波路としての性質を満たす
のには十分でなかった。Conventionally, if an element is added to the substrate in an amount sufficient to increase the refractive index of the film, the difference in lattice constant between the substrate and the film becomes large, and cracking occurs during crystal growth. Even if the crystal grows, the propagation loss becomes large, and it does not reach the value of 3 dB / cm or less for practical use, which is not enough to satisfy the properties as a waveguide. Further, when trying to match the lattice constants, it is possible to make only a slight difference in the refractive index, and therefore the refractive index cannot be controlled, which is not sufficient to satisfy the property as a waveguide.
【０００４】例えば、アルミニウムガーネット結晶膜お
よび置換型アルミニウムガーネット結晶膜については、
液相エピタキシャル成長法等を用いることにより、アル
ミニウムガーネット基板および置換型アルミニウムガー
ネット基板上に比較的容易に成長することができる。今
までの材料では、屈折率を上げるために、例えばアルミ
ニウムの一部をガリウムに置換すると、ガリウムガーネ
ットの方がアルミニウムガーネットよりも格子定数が大
きいために、基板と膜との間で格子不整合が起こり、ガ
ーネット構造の膜が成長しないことが多い。また、格子
不整合が小さな範囲で結晶成長を行なおうとすると、屈
折率の制御を行なうことができないという問題点があっ
た。For example, regarding the aluminum garnet crystal film and the substitutional type aluminum garnet crystal film,
By using the liquid phase epitaxial growth method or the like, it is possible to grow relatively easily on the aluminum garnet substrate and the substitutional type aluminum garnet substrate. In the conventional materials, when a part of aluminum is replaced with gallium to increase the refractive index, gallium garnet has a larger lattice constant than aluminum garnet, so that the lattice mismatch between the substrate and the film is large. Often occurs and the garnet structure film does not grow. Further, there is a problem in that the refractive index cannot be controlled when crystal growth is attempted in a range where the lattice mismatch is small.
【０００５】[0005]
【課題を解決するための手段】以上の課題を解決するた
めに、本発明のアルミニウムガーネット結晶膜は、一般
式Ｒ3Ａｌ5Ｏ12（Ｒはイットリウム、ガドリニウムある
いはその他の３価の価数を有する希土類元素のいずれか
１種を表す）で示されるアルミニウムガーネット結晶基
板、または、前記アルミニウムガーネット結晶の酸素以
外の構成元素の一部を、３価の価数を有する１種以上の
元素、または３価以外の価数を有する２種類以上の元素
を組み合わせることによって全体として３価と等価な役
割を担わせた元素の組、によって置換した置換型ガーネ
ット結晶基板上に、該アルミニウムガーネット結晶また
は置換型ガーネット結晶の組成のうちアルミニウムの一
部をガリウム、スカンジウム、鉄の３価の元素のうちか
ら選ばれた１種類以上の元素で置換し、かつ前記一般式
のＲの一部を、ルテチウム、イッテルビウム、ツリウ
ム、エルビウムの３価の元素のうちから選ばれた１種類
以上の元素で置換した膜であることを特徴とするもので
ある。In order to solve the above problems, the aluminum garnet crystal film of the present invention has a general formula R 3 Al 5 O 12 (R is yttrium, gadolinium or other trivalent valence). An aluminum garnet crystal substrate represented by any one of the rare earth elements), or a part of the constituent elements other than oxygen of the aluminum garnet crystal having one or more elements having a valence of 3, or On the substitution type garnet crystal substrate substituted by a set of elements which have a role equivalent to trivalence as a whole by combining two or more kinds of elements having a valence other than trivalence, the aluminum garnet crystal or the substitution One of a part of aluminum in the composition of the type garnet crystal selected from the trivalent elements gallium, scandium and iron A film in which at least one element selected from the trivalent elements of lutetium, ytterbium, thulium, and erbium is substituted with R of the above general formula, It is a feature.
【０００６】本発明では、２種類以上の元素で置換を行
なうことにより、屈折率と格子定数整合とを同時に満足
した。例えば、酸化鉛と酸化硼素の混合物からなる融剤
に、ガーネット結晶を構成する金属元素の金属酸化物
を、結晶成長条件を固定することによって自動的に決ま
る偏析係数から計算される量だけ溶解し、ガーネット結
晶が析出する結晶成長条件下に結晶成長を行なうことに
よって屈折率制御と格子整合を同時に行なうことを特徴
とする。In the present invention, the refractive index and the lattice constant matching are satisfied at the same time by performing substitution with two or more kinds of elements. For example, in a flux consisting of a mixture of lead oxide and boron oxide, a metal oxide of the metal element forming the garnet crystal is dissolved in an amount calculated from the segregation coefficient automatically determined by fixing the crystal growth conditions. , The garnet crystal is grown under the crystal growth conditions, whereby the refractive index control and the lattice matching are performed at the same time.
【０００７】[0007]
【作用】アルミニウムガーネット結晶は、一般式Ｒ3Ａ
ｌ5Ｏ12で表される。Ｒの部分を３価の価数を有する希
土類元素（ルテチウム、イッテルビウム、ツリウム、エ
ルビウムの３価の元素のうちから選ばれた１種類以上の
元素）で、Ａｌの部分をスカンジウム、ガリウム、鉄か
ら選ばれた１以上の元素で置換することができる。その
中で、希土類が占めているサイトは屈折率を変化させる
ことなく格子定数に作用し、アルミニウムが占めている
サイトは、屈折率に大きく作用することから、アルミニ
ウムガーネットの格子定数と屈折率は、これらの置換元
素を適当に選ぶことによって制御可能となる。この性質
を用いると導波路材料として不可欠な屈折率制御を行な
った結晶成長が可能となり、導波路の設計が可能にな
る。Function: Aluminum garnet crystal has the general formula R 3 A
It is represented by l 5 O 12 . The R portion is a rare earth element having one or more valences (one or more elements selected from the trivalent elements of lutetium, ytterbium, thulium, and erbium), and the Al portion is from scandium, gallium, and iron. It can be replaced by one or more selected elements. Among them, the site occupied by rare earth acts on the lattice constant without changing the refractive index, and the site occupied by aluminum greatly acts on the refractive index. Therefore, the lattice constant and the refractive index of aluminum garnet are , Can be controlled by appropriately selecting these substituting elements. By using this property, it becomes possible to perform crystal growth while controlling the refractive index, which is indispensable as a waveguide material, and it becomes possible to design a waveguide.
【０００８】以下に本発明の作用を具体的実施例によっ
てさらに詳細に説明する。The operation of the present invention will be described below in more detail with reference to specific examples.
【０００９】[0009]
【実施例１】本実施例は本発明を基板との屈折率差を
０．００９の膜について実施したものである。結晶成長
は、図１に示されるような構造の装置を用いて行なっ
た。白金からなるるつぼ５の中にメルトを構成する薬品
を入れて融解させる。該融解したメルト８に対して、上
部から回転軸７を伴った基板ホルダー６に装着した基板
１を、ある回転数をもってメルトに接触させて、適当な
時間結晶成長させ、その後メルトから取り出す。Example 1 In this example, the present invention was carried out on a film having a difference in refractive index from the substrate of 0.009. Crystal growth was performed using a device having a structure as shown in FIG. A chemical constituting a melt is put into a crucible 5 made of platinum and melted. With respect to the melted melt 8, the substrate 1 mounted on the substrate holder 6 with the rotating shaft 7 from above is brought into contact with the melt at a certain rotation speed, crystal growth is carried out for an appropriate time, and then taken out from the melt.
【００１０】本発明による方法により以下のメルト組成
およびアルミニウムガーネット（Ｙ3Ａｌ5Ｏ12：ＹＡ
Ｇ）基板によって、ガーネット結晶膜を作製した。According to the method of the present invention, the following melt composition and aluminum garnet (Y 3 Al 5 O 12 : YA
G) A garnet crystal film was produced using the substrate.
【００１１】表１ 本発明における結晶成長のメルト組成１ ─────────────────── 種類 分量 ─────────────────── Ｙ2Ｏ3 ２．３６ｇ Ｌｕ2Ｏ3 １．１６ｇ Ａｌ2Ｏ3 ２．２５ｇ Ｇａ2Ｏ3 １．７９ｇ ＰｂＯ ４９０ｇ Ｂ2Ｏ3 １０．０ｇ ───────────────────Table 1 Melt composition 1 of crystal growth in the present invention 1 ─────────────────── Type quantity ──────────────── ──── Y 2 O 3 2.36 g Lu 2 O 3 1.16 g Al 2 O 3 2.25 g Ga 2 O 3 1.79 g PbO 490 g B 2 O 3 10.0 g ───────── ──────────
【００１２】その結果、膜組成がＹ2.39Ｌｕ0.61Ａｌ
4.64Ｇａ0.36Ｏ12.0を有するガーネット結晶膜が作製で
き、基板と膜の格子定数差は０．０１Åになり、本発明
によって従来値の半分になった。また基板と膜の屈折率
差も０．００９となり、十分なものとなった。このこと
から本発明による効果が明かに現われたものと考えられ
る。図２に本発明による膜２の断面図、図３に斜視図を
示す。クラックの発生もなく、光の閉じ込めも良好であ
った。図中、１は基板、２は本発明によるガーネット結
晶膜、３は入射光、４は出射光を示す。As a result, the film composition was Y 2.39 Lu 0.61 Al.
A garnet crystal film having 4.64 Ga 0.36 O 12.0 can be produced, and the lattice constant difference between the substrate and the film is 0.01 Å, which is half of the conventional value by the present invention. Further, the difference in refractive index between the substrate and the film was 0.009, which was sufficient. From this, it is considered that the effect of the present invention is clearly shown. FIG. 2 shows a sectional view of the membrane 2 according to the present invention, and FIG. 3 shows a perspective view thereof. No cracks were generated and the light was well confined. In the figure, 1 is a substrate, 2 is a garnet crystal film according to the present invention, 3 is incident light, and 4 is outgoing light.
【００１３】また、本実施例の膜を用いて図４に示すよ
うに、膜１３を符号１２で示すのようにリッジ加工し、
アルミニウムガーネット基板と同じ組成アルミニウムガ
ーネット１４で埋め込むことによって埋め込み型導波路
を作製したところ、図５に示すよう光がきれいに閉じ込
められており、光導波路としての機能を十分に果たすこ
とができた。Further, using the film of this embodiment, as shown in FIG. 4, the film 13 is ridge processed as indicated by reference numeral 12,
When an embedded waveguide was manufactured by embedding aluminum garnet 14 having the same composition as that of the aluminum garnet substrate, light was confined cleanly as shown in FIG. 5, and the function as an optical waveguide could be sufficiently fulfilled.
【００１４】一方、ガリウムのみでアルミニウムの一部
を置換しても、基板と膜の屈折率差０．００９の膜を作
製することができるが、膜の格子定数差が、０．０２Å
と大きくなり、図６に示すようにアルミニウムガーネッ
ト膜９にクラック１０の発生があり、その結果として、
膜の伝搬損失が大きく光学材料に供するのに不適当であ
った。On the other hand, a film having a refractive index difference of 0.009 between the substrate and the film can be produced by substituting a part of aluminum with gallium alone, but the lattice constant difference between the films is 0.02Å.
And the aluminum garnet film 9 has cracks 10 as shown in FIG. 6, and as a result,
Since the propagation loss of the film was large, it was unsuitable for use as an optical material.
【００１５】[0015]
【比較例１】従来技術においては、屈折率を上昇させる
目的で、例えば以下のメルト組成によって置換型ＹＡＧ
膜を約４μｍの膜厚になるようにＹＡＧ基板上に液相エ
ピタキシャル成長させるというものでった。Comparative Example 1 In the prior art, for the purpose of increasing the refractive index, for example, the substitution type YAG was prepared by the following melt composition.
The film was to be liquid phase epitaxially grown on a YAG substrate so as to have a film thickness of about 4 μm.
【００１６】表１−１ 従来技術における結晶成長のメルト組成１−１ ───────────────────── 種類 分量 ───────────────────── Ｙ2Ｏ3 ３．１２ｇ Ａｌ2Ｏ3 ２．３１ｇ Ｇａ2Ｏ3 １．７７ｇ ＰｂＯ ４９０ｇ Ｂ2Ｏ3 １０．０ｇ ─────────────────────Table 1-1 Melt composition of crystal growth in prior art 1-1 ───────────────────── Type quantity ────────── ──────────── Y 2 O 3 3.12g Al 2 O 3 2.31g Ga 2 O 3 1.77g PbO 490g B 2 O 3 10.0g ───────── ─────────────
【００１７】しかしながら、この組成によって作製した
膜は、組成Ｙ3.00Ａｌ4.64Ｇａ0.36Ｏ12.0で、基板と膜
の格子定数差が、０．０２Åと大きくなり、図６に示す
ようにアルミニウムガーネット膜９にクラック１０の発
生があり、その結果として、アルミニウムガーネット膜
９を伝播してきた出射光１１が模式的に示すように膜の
伝搬損失が大きく光学材料に供するのに不適当であっ
た。However, the film produced by this composition has the composition Y 3.00 Al 4.64 Ga 0.36 O 12.0 , and the difference in lattice constant between the substrate and the film is as large as 0.02 Å. As shown in FIG. As a result, the emitted light 11 propagating through the aluminum garnet film 9 had a large propagation loss of the film and was unsuitable for use as an optical material.
【００１８】[0018]
【比較例２】また、Ｇａ量を減らして、約４μｍの膜厚
にクラックが発生しないように液相エピタキシャル成長
させたときのメルト組成は以下のものである。COMPARATIVE EXAMPLE 2 Further, the melt composition when the liquid phase epitaxial growth is performed so that the amount of Ga is reduced and cracks do not occur in the film thickness of about 4 μm is as follows.
【００１９】表１−２ 従来技術における結晶成長のメルト組成１−２ ───────────────────── 種類 分量 ───────────────────── Ｙ2Ｏ3 ３．５３ｇ Ａｌ2Ｏ3 ２．６３ｇ Ｇａ2Ｏ3 ０．８９ｇ ＰｂＯ ４９０ｇ Ｂ2Ｏ3 １０．０ｇ ─────────────────────Table 1-2 Melt composition of crystal growth in the prior art 1-2 ───────────────────── Type quantity ────────── ──────────── Y 2 O 3 3.53 g Al 2 O 3 2.63 g Ga 2 O 3 0.89 g PbO 490 g B 2 O 3 10.0 g ───────── ─────────────
【００２０】以上のメルト組成によって作製したガーネ
ット結晶膜は、組成Ｙ3.00Ａｌ4.82Ｇａ0.18Ｏ12.0で、
格子定数差が０．０１Åと比較的小さく、クラックも発
生せず膜の伝搬損失は小さくなり、前述のガーネット結
晶膜に比較して性質は一見向上したが、屈折率差が０．
００４と小さく光の閉じ込めが不十分であった。結果的
に、光学材料に供するには不十分であった。The garnet crystal film produced by the above melt composition has the composition Y 3.00 Al 4.82 Ga 0.18 O 12.0 ,
The lattice constant difference was relatively small at 0.01 Å, cracks did not occur, and the propagation loss of the film was small. Although the properties were seemingly improved compared to the garnet crystal film described above, the difference in refractive index was less than 0.
It was as small as 004, and the light confinement was insufficient. As a result, it was insufficient for use as an optical material.
【００２１】[0021]
【実施例２】本実施例は本発明を基板との屈折率差を
０．００８の膜について実施したものである。結晶成長
は、図１に示されるような構造の装置を用いて行なっ
た。白金からなるるつぼ５の中にメルトを構成する薬品
を入れて融解させる。該融解したメルト８に対して、上
部から回転軸７を伴った基板ホルダー６に装着したＹＡ
Ｇ基板１を、ある回転数をもってメルトに接触させて、
適当な時間結晶成長させ、その後メルトから取り出す。Example 2 In this example, the present invention is carried out for a film having a difference in refractive index from the substrate of 0.008. Crystal growth was performed using a device having a structure as shown in FIG. A chemical constituting a melt is put into a crucible 5 made of platinum and melted. YA attached to the substrate holder 6 with the rotating shaft 7 from above for the melted melt 8
The G substrate 1 is brought into contact with the melt at a certain rotation speed,
The crystal is grown for an appropriate time and then taken out from the melt.
【００２２】本発明による方法により以下のメルト組成
によって、ガーネット結晶膜を作製した。A garnet crystal film was produced with the following melt composition by the method according to the present invention.
【００２３】表２ 本発明における結晶成長のメルト組成２ ────────────────── 種類 分量 ────────────────── Ｙ2Ｏ3 ０．６２ｇ Ｙｂ2Ｏ3 ３．９８ｇ Ａｌ2Ｏ3 ２．５３ｇ Ｓｃ2Ｏ3 ０．９５ｇ ＰｂＯ ４９０ｇ Ｂ2Ｏ3 １０．０ｇ ──────────────────Table 2 Melt composition 2 of crystal growth in the present invention 2 ────────────────── Type quantity ───────────────── ── Y 2 O 3 0.62 g Yb 2 O 3 3.98 g Al 2 O 3 2.53 g Sc 2 O 3 0.95 g PbO 490 g B 2 O 3 10.0 g ──────────── ───────
【００２４】その結果、膜組成がＹ0.84Ｙｂ2.16Ａｌ
4.63Ｓｃ0.37Ｏ12.0を有するガーネット結晶膜が作製で
き、基板と膜の格子定数差は０．００２Åになり、本発
明によって従来値の半分になった。また基板と膜の屈折
率差も０．００８となり、十分なものとなった。このこ
とから本発明による効果が明かに現われたものと考えら
れる。図２に本発明による膜の断面図、図３に斜視図を
示す。クラックの発生もなく、光の閉じ込めも良好であ
った。As a result, the film composition was Y 0.84 Yb 2.16 Al.
A garnet crystal film having 4.63 Sc 0.37 O 12.0 can be produced, and the difference in lattice constant between the substrate and the film is 0.002Å, which is half the conventional value according to the present invention. The difference in refractive index between the substrate and the film was 0.008, which was sufficient. From this, it is considered that the effect of the present invention is clearly shown. FIG. 2 shows a cross-sectional view of the film according to the present invention, and FIG. 3 shows a perspective view. No cracks were generated and the light was well confined.
【００２５】一方、スカンジウムのみでアルミニウムの
一部を置換しても、基板と膜の屈折率差０．００８の膜
を作製することができるが、膜の格子定数差が、０．０
５Åと大きくなり、図６に示すようにアルミニウムガー
ネット膜９にクラック１０の発生があり、その結果とし
て、膜の伝搬損失が大きく光学材料に供するのに不適当
であった。On the other hand, a film having a difference in refractive index between the substrate and the film of 0.008 can be produced even if a part of aluminum is replaced with only scandium, but the difference in lattice constant between the films is 0.0.
As a result, the aluminum garnet film 9 had cracks 10 as shown in FIG. 6, and as a result, the propagation loss of the film was large and it was unsuitable for use as an optical material.
【００２６】[0026]
【比較例３】従来技術においては、屈折率を上昇させる
目的で、例えば以下のメルト組成によって置換型ＹＡＧ
結晶膜を約３μｍの膜厚になるようにＹＡＧ結晶基板上
に液相エピタキシャル成長させるというものでった。Comparative Example 3 In the prior art, for the purpose of increasing the refractive index, for example, the substitution type YAG was prepared by the following melt composition.
The crystal film was liquid phase epitaxially grown on the YAG crystal substrate so as to have a film thickness of about 3 μm.
【００２７】表２−１ 従来技術における結晶成長のメルト組成２−１ ───────────────────── 種類 分量 ───────────────────── Ｙ2Ｏ3 ２．１５ｇ Ａｌ2Ｏ3 ２．６１ｇ Ｓｃ2Ｏ3 １．８０ｇ ＰｂＯ ４９０ｇ Ｂ2Ｏ3 １０．０ｇ ─────────────────────Table 2-1 Melt composition of crystal growth in prior art 2-1 ───────────────────── Type quantity ────────── ──────────── Y 2 O 3 2.15g Al 2 O 3 2.61g Sc 2 O 3 1.80g PbO 490g B 2 O 3 10.0g ───────── ─────────────
【００２８】しかしながら、この組成によって作製した
膜は、組成Ｙ3.00Ａｌ4.63Ｓｃ0.37Ｏ12.0で、基板と膜
の格子定数差が、０．０５Åと大きくなり、図６に示す
ようにアルミニウムガーネット膜９にクラック１０の発
生があり、その結果として、アルミニウムガーネット膜
９を伝播してきた出射光１１が模式的に示すように膜の
伝搬損失が大きく光学材料に供するのに不適当であっ
た。However, the film produced by this composition has the composition Y 3.00 Al 4.63 Sc 0.37 O 12.0 , and the lattice constant difference between the substrate and the film is as large as 0.05 Å, and as shown in FIG. As a result, the emitted light 11 propagating through the aluminum garnet film 9 had a large propagation loss of the film and was unsuitable for use as an optical material.
【００２９】[0029]
【比較例４】また、Ｓｃ量を減らして、約３μｍの膜厚
にクラックが発生しないように液相エピタキシャル成長
させたときのメルト組成は以下のものである。COMPARATIVE EXAMPLE 4 Further, the melt composition when the liquid phase epitaxial growth is performed so that the amount of Sc is reduced and cracks do not occur in the film thickness of about 3 μm is as follows.
【００３０】表２−２ 従来技術における結晶成長のメルト組成２−２ ───────────────────── 種類 分量 ───────────────────── Ｙ2Ｏ3 ２．３３ｇ Ａｌ2Ｏ3 ２．６８ｇ Ｓｃ2Ｏ3 ０．０１ｇ ＰｂＯ ４９０ｇ Ｂ2Ｏ3 １０．０ｇ ─────────────────────Table 2-2 Melt composition of crystal growth in the prior art 2-2 ───────────────────── Type quantity ────────── ──────────── Y 2 O 3 2.33 g Al 2 O 3 2.68 g Sc 2 O 3 0.01 g PbO 490 g B 2 O 3 10.0 g ───────── ─────────────
【００３１】以上のメルト組成によって作製したガーネ
ット結晶膜は、組成Ｙ3.00Ａｌ4.99 5Ｇａ0.005Ｏ
12.0で、格子定数差が０．００７Åと比較的小さく、ク
ラックも発生せず膜の伝搬損失は小さくなり、前述のガ
ーネット結晶膜に比較して性質は一見向上したが、屈折
率差が０．０００１と小さく光の閉じ込めが不十分であ
った。結果的に、光学材料に供するには不十分であっ
た。The garnet crystal film produced by the above melt composition has the composition Y 3.00 Al 4.99 5 Ga 0.005 O
At 12.0 , the lattice constant difference was relatively small at 0.007Å, cracks did not occur, and the propagation loss of the film was small. Although the properties seemed to be improved compared to the garnet crystal film described above, the difference in refractive index was 0. It was as small as 0001, and light was not confined sufficiently. As a result, it was insufficient for use as an optical material.
【００３２】[0032]
【実施例３】本実施例は本発明を基板との屈折率差を
０．０１の膜について実施したものである。結晶成長
は、図１に示されるような構造の装置を用いて行なっ
た。白金からなるるつぼ５の中にメルトを構成する薬品
を入れて融解させる。該融解したメルト８に対して、上
部から回転軸７を伴った基板ホルダー６に装着したＹＡ
Ｇ基板１を、ある回転数をもってメルトに接触させて、
適当な時間結晶成長させ、その後メルトから取り出す。Example 3 In this example, the present invention is carried out for a film having a difference in refractive index from the substrate of 0.01. Crystal growth was performed using a device having a structure as shown in FIG. A chemical constituting a melt is put into a crucible 5 made of platinum and melted. YA attached to the substrate holder 6 with the rotating shaft 7 from above for the melted melt 8
The G substrate 1 is brought into contact with the melt at a certain rotation speed,
The crystal is grown for an appropriate time and then taken out from the melt.
【００３３】そこで、本発明による方法により以下のメ
ルト組成によって、ガーネット結晶膜を作製した。Therefore, a garnet crystal film was produced by the method according to the present invention with the following melt composition.
【００３４】表３ 本発明における結晶成長のメルト組成３ ────────────────── 種類 分量 ────────────────── Ｙ2Ｏ3 １．６７ｇ Ｅｒ2Ｏ3 ０．９２ｇ Ｔｍ2Ｏ3 ０．５４ｇ Ａｌ2Ｏ3 ２．３９ｇ Ｆｅ2Ｏ3 ０．４３ｇ ＰｂＯ ４９０ｇ ──────────────────Table 3 Melt composition 3 of crystal growth in the present invention 3 ────────────────── Type quantity ───────────────── ── Y 2 O 3 1.67 g Er 2 O 3 0.92 g Tm 2 O 3 0.54 g Al 2 O 3 2.39 g Fe 2 O 3 0.43 g PbO 490 g ─────────── ───────
【００３５】その結果、膜組成がＹ2.34Ｅｒ0.31Ｔｍ
0.35Ａｌ4.87Ｆｅ0.13Ｏ12.0を有するガーネット膜が作
製でき、基板と膜の格子定数差は０．００３Åになり、
本発明によって従来値の半分になった。また基板と膜の
屈折率差も０．０１となり、十分なものとなった。この
ことから本発明による効果が明かに現われたものと考え
られる。図２に本発明による膜の断面図、図３にその斜
視図を示す。クラックの発生もなく、光の閉じ込めも良
好であった。As a result, the film composition was Y 2.34 Er 0.31 Tm.
A garnet film having 0.35 Al 4.87 Fe 0.13 O 12.0 can be produced, and the lattice constant difference between the substrate and the film is 0.003Å,
According to the present invention, the conventional value is reduced to half. Further, the difference in refractive index between the substrate and the film was 0.01, which was sufficient. From this, it is considered that the effect of the present invention is clearly shown. FIG. 2 shows a sectional view of the film according to the present invention, and FIG. 3 shows a perspective view thereof. No cracks were generated and the light was well confined.
【００３６】一方、鉄のみでアルミニウムの一部を置換
しても、基板と膜の屈折率差０．０１の膜を作製するこ
とができるが、膜の格子定数差が、０．０２Åと大きく
なり、図６に示すようにアルミニウムガーネット膜９に
クラック１０の発生があり、その結果として、アルミニ
ウムガーネット膜９を伝播してきた出射光１１が模式的
に示すように膜の伝搬損失が大きく光学材料に供するの
に不適当であった。On the other hand, a film having a refractive index difference of 0.01 between the substrate and the film can be produced by substituting only part of aluminum with iron, but the difference in lattice constant between the films is as large as 0.02Å. As a result, as shown in FIG. 6, the aluminum garnet film 9 has cracks 10. As a result, the emitted light 11 propagating through the aluminum garnet film 9 has a large propagation loss in the film as shown schematically. It was unsuitable for use.
【００３７】[0037]
【比較例５】従来技術においては、屈折率を上昇させる
目的で、例えば以下のメルト組成によって置換型ＹＡＧ
結晶膜を約４μｍの膜厚になるようにＹＡＧ結晶基板上
に液相エピタキシャル成長させるというものでった。Comparative Example 5 In the prior art, for the purpose of increasing the refractive index, for example, the substitution type YAG was prepared by the following melt composition.
The crystal film was liquid phase epitaxially grown on the YAG crystal substrate so as to have a film thickness of about 4 μm.
【００３８】表３−１ 従来技術における結晶成長のメルト組成３−１ ───────────────────── 種類 分量 ───────────────────── Ｙ2Ｏ3 ２．１３ｇ Ａｌ2Ｏ3 ２．６１ｇ Ｆｅ2Ｏ3 ０．２９ｇ ＰｂＯ ４９０ｇ Ｂ2Ｏ3 １０．０ｇ ─────────────────────Table 3-1 Melt composition of crystal growth in the prior art 3-1 ───────────────────── Type quantity ────────── ──────────── Y 2 O 3 2.13 g Al 2 O 3 2.61 g Fe 2 O 3 0.29 g PbO 490 g B 2 O 3 10.0 g ──────── ─────────────
【００３９】しかしながら、この組成によって作製した
膜は、組成Ｙ3.00Ａｌ4.79Ｆｅ0.21Ｏ12.0で、基板と膜
の格子定数差が、０．０１５Åと大きくなり、図６に示
すようにアルミニウムガーネット膜９にクラック１０の
発生があり、その結果として、アルミニウムガーネット
膜９を伝播してきた出射光１１が模式的に示すように膜
の伝搬損失が大きく光学材料に供するのに不適当であっ
た。However, the film produced by this composition has the composition Y 3.00 Al 4.79 Fe 0.21 O 12.0 , and the lattice constant difference between the substrate and the film is as large as 0.015 Å, and as shown in FIG. 6, the aluminum garnet film 9 is formed. As a result, the emitted light 11 propagating through the aluminum garnet film 9 had a large propagation loss of the film and was unsuitable for use as an optical material.
【００４０】[0040]
【比較例６】また、Ｆｅ量を減らして、約４μｍの膜厚
にクラックが発生しないように液相エピタキシャル成長
させたときのメルト組成は以下のものである。[Comparative Example 6] Further, the melt composition when liquid phase epitaxial growth is performed so that the amount of Fe is reduced and cracks do not occur in a film thickness of about 4 μm is as follows.
【００４１】表３−２ 従来技術における結晶成長のメルト組成３−２ ───────────────────── 種類 分量 ───────────────────── Ｙ2Ｏ3 ２．５５ｇ Ａｌ2Ｏ3 ２．３９ｇ Ｆｅ2Ｏ3 ０．１２ｇ ＰｂＯ ４９０ｇ Ｂ2Ｏ3 １０．０ｇ ─────────────────────Table 3-2 Melt composition of crystal growth in the prior art 3-2 ───────────────────── Type quantity ────────── ──────────── Y 2 O 3 2.55 g Al 2 O 3 2.39 g Fe 2 O 3 0.12 g PbO 490 g B 2 O 3 10.0 g ───────── ─────────────
【００４２】以上のメルト組成によって作製したガーネ
ット膜結晶は、組成Ｙ3.00Ａｌ4.93Ｇａ0.05Ｏ12.0で、
格子定数差が０．０１Åと比較的小さく、クラックも発
生せず膜の伝搬損失は小さくなり、前述のガーネット結
晶膜に比較して性質は一見向上したが、屈折率差が０．
００４と小さく光の閉じ込めが不十分であった。結果的
に、光学材料に供するには不十分であった。The garnet film crystal produced by the above melt composition has the composition Y 3.00 Al 4.93 Ga 0.05 O 12.0 ,
The lattice constant difference was relatively small at 0.01 Å, cracks did not occur, and the propagation loss of the film was small. Although the properties were seemingly improved compared to the garnet crystal film described above, the difference in refractive index was less than 0.
It was as small as 004, and the light confinement was insufficient. As a result, it was insufficient for use as an optical material.
【００４３】[0043]
【実施例４】本実施例は本発明を基板との屈折率差を
０．００９の膜について実施したものである。結晶成長
は、図１に示されるような構造の装置を用いて行なっ
た。白金からなるるつぼ５の中にメルトを構成する薬品
を入れて融解させる。該融解したメルト８に対して、上
部から回転軸７を伴った基板ホルダー６に装着したＹＡ
Ｇ基板１を、ある回転数をもってメルトに接触させて、
適当な時間結晶成長させ、その後メルトから取り出す。[Embodiment 4] In this embodiment, the present invention is applied to a film having a difference in refractive index from the substrate of 0.009. Crystal growth was performed using a device having a structure as shown in FIG. A chemical constituting a melt is put into a crucible 5 made of platinum and melted. YA attached to the substrate holder 6 with the rotating shaft 7 from above for the melted melt 8
The G substrate 1 is brought into contact with the melt at a certain rotation speed,
The crystal is grown for an appropriate time and then taken out from the melt.
【００４４】今回の本発明による方法により以下のメル
ト組成によって、ガーネット結晶膜を作製した。A garnet crystal film having the following melt composition was produced by the method according to the present invention.
【００４５】表４ 本発明における結晶成長のメルト組成４ ────────────────── 種類 分量 ────────────────── Ｙ2Ｏ3 ２．８０ｇ Ｌｕ2Ｏ3 ２．３６ｇ Ｅｒ2Ｏ3 ９．５７ｇ Ａｌ2Ｏ3 ３．１７ｇ Ｇａ2Ｏ3 ９．９２ｇ Ｓｃ2Ｏ3 １．２３ｇ ＰｂＯ ４９０ｇ Ｂ2Ｏ3 １０．０ｇ ──────────────────Table 4 Melt composition 4 for crystal growth in the present invention 4 ────────────────── Type quantity ───────────────── --Y 2 O 3 2.80 g Lu 2 O 3 2.36 g Er 2 O 3 9.57 g Al 2 O 3 3.17 g Ga 2 O 3 9.92 g Sc 2 O 3 1.23 g PbO 490 g B 2 O 3 10.0 g ──────────────────
【００４６】その結果、膜組成がＹ1.67Ｌｕ0.73Ｅｒ
0.60Ａｌ4.59Ｇａ0.14Ｓｃ0.27Ｏ12.0を有するガーネッ
ト結晶膜が作製でき、基板と膜の格子定数差は０．００
８Åになり、本発明によって従来値の半分になった。ま
た基板と膜の屈折率差も０．００９となり、十分なもの
となった。このことから本発明による効果が明かに現わ
れたものと考えられる。図２に本発明による膜の断面
図、図３に斜視図を示す。クラックの発生もなく、光の
閉じ込めも良好であった。As a result, the film composition was Y 1.67 Lu 0.73 Er.
A garnet crystal film having 0.60 Al 4.59 Ga 0.14 Sc 0.27 O 12.0 can be produced, and the lattice constant difference between the substrate and the film is 0.00.
It became 8Å, which is half of the conventional value by the present invention. Further, the difference in refractive index between the substrate and the film was 0.009, which was sufficient. From this, it is considered that the effect of the present invention is clearly shown. FIG. 2 shows a cross-sectional view of the film according to the present invention, and FIG. 3 shows a perspective view. No cracks were generated and the light was well confined.
【００４７】[0047]
【発明の効果】本発明により、基板と膜の間の屈折率差
を実用に供する範囲で設定することができるようになっ
た。また、基板と膜の格子整合が行なわれているので、
損失の少ない膜が作製でき、そのことによって導波路材
料として優れた性質を有する材料となり、産業上の利点
が大きい。According to the present invention, the difference in refractive index between the substrate and the film can be set within a range for practical use. Also, since the lattice matching between the substrate and the film is performed,
A film with less loss can be produced, and as a result, it becomes a material having excellent properties as a waveguide material, which has great industrial advantages.
【図１】液相エピタキシャル成長に用いた装置の断面概
念図。FIG. 1 is a conceptual sectional view of an apparatus used for liquid phase epitaxial growth.
【図２】本発明のアルミニウムガーネット結晶膜の断面
図。FIG. 2 is a sectional view of an aluminum garnet crystal film of the present invention.
【図３】本発明のアルミニウムガーネット結晶膜の斜視
図。FIG. 3 is a perspective view of an aluminum garnet crystal film of the present invention.
【図４】埋め込み型導波路の断面図。FIG. 4 is a cross-sectional view of an embedded waveguide.
【図５】埋め込み型導波路を伝搬してきた光の近視野
像。FIG. 5 is a near-field image of light propagating through an embedded waveguide.
【図６】従来のアルミニウムガーネット結晶膜の断面
図。FIG. 6 is a sectional view of a conventional aluminum garnet crystal film.
【符号の説明】 １ アルミニウムガーネット結晶基板または置換型
アルミニウムガーネット結晶基板 ２ 本発明のアルミニウムガーネット結晶膜 ３ 入射光 ４ 本発明のアルミニウムガーネット膜を伝搬して
きた出射光 ５ 白金るつぼ ６ 基板ホルダー ７ 回転軸 ８ メルト ９ 従来のアルミニウムガーネット結晶膜 １０ クラック １１ 従来のアルミニウムガーネット結晶膜を伝搬し
てきた出射光 １２ リッジ １３ アルミニウムガーネット結晶膜 １４ 基板と同じ組成をもつ埋め込み用アルミニウム
ガーネット[Description of Reference Signs] 1 aluminum garnet crystal substrate or substitutional type aluminum garnet crystal substrate 2 aluminum garnet crystal film of the present invention 3 incident light 4 emitted light propagating through the aluminum garnet film of the present invention 5 platinum crucible 6 substrate holder 7 rotation axis 8 Melt 9 Conventional Aluminum Garnet Crystal Film 10 Crack 11 Outgoing Light Propagated in Conventional Aluminum Garnet Crystal Film 12 Ridge 13 Aluminum Garnet Crystal Film 14 Aluminum Garnet for Embedding Having the Same Composition as the Substrate
Claims (1)
ガドリニウムあるいはその他の３価の価数を有する希土
類元素のいずれか１種を表す）で示されるアルミニウム
ガーネット結晶基板、または、前記アルミニウムガーネ
ット結晶の酸素以外の構成元素の一部を、３価の価数を
有する１種以上の元素、または３価以外の価数を有する
２種類以上の元素を組み合わせることによって全体とし
て３価と等価な役割を担わせた元素の組、によって置換
した置換型ガーネット結晶基板上に、該アルミニウムガ
ーネット結晶または置換型ガーネット結晶の組成のうち
アルミニウムの一部をガリウム、スカンジウム、鉄の３
価の元素のうちから選ばれた１種類以上の元素で置換
し、かつ前記一般式のＲの一部を、ルテチウム、イッテ
ルビウム、ツリウム、エルビウムの３価の元素のうちか
ら選ばれた１種類以上の元素で置換した膜であることを
特徴とするアルミニウムガーネット結晶膜。1. The general formula R 3 Al 5 O 12 (R is yttrium,
Gadolinium or any other rare earth element having a trivalent valence)), or a part of the constituent elements other than oxygen of the aluminum garnet crystal is trivalent. Substitutional garnet crystal replaced by one or more elements having a number, or a set of elements having a role equivalent to trivalence as a whole by combining two or more elements having a valence other than trivalence On the substrate, a part of aluminum in the composition of the aluminum garnet crystal or the substitutional garnet crystal is replaced with gallium, scandium or iron.
One or more elements selected from the trivalent elements of lutetium, ytterbium, thulium, and erbium by substituting with one or more elements selected from the valence elements and a part of R in the general formula An aluminum garnet crystal film, which is a film substituted with the element of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2364394A JP3456545B2 (en) | 1994-01-26 | 1994-01-26 | Optical waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2364394A JP3456545B2 (en) | 1994-01-26 | 1994-01-26 | Optical waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07215798A true JPH07215798A (en) | 1995-08-15 |
| JP3456545B2 JP3456545B2 (en) | 2003-10-14 |
Family
ID=12116246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2364394A Expired - Lifetime JP3456545B2 (en) | 1994-01-26 | 1994-01-26 | Optical waveguide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3456545B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08301695A (en) * | 1995-05-08 | 1996-11-19 | Nippon Telegr & Teleph Corp <Ntt> | Optical material and its production |
| US6783875B2 (en) * | 2000-04-18 | 2004-08-31 | Ngk Insulators, Ltd. | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
-
1994
- 1994-01-26 JP JP2364394A patent/JP3456545B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08301695A (en) * | 1995-05-08 | 1996-11-19 | Nippon Telegr & Teleph Corp <Ntt> | Optical material and its production |
| US6783875B2 (en) * | 2000-04-18 | 2004-08-31 | Ngk Insulators, Ltd. | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3456545B2 (en) | 2003-10-14 |
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