JPH0545689A - Waveguide-type nonlinear optical device - Google Patents
Waveguide-type nonlinear optical deviceInfo
- Publication number
- JPH0545689A JPH0545689A JP3207696A JP20769691A JPH0545689A JP H0545689 A JPH0545689 A JP H0545689A JP 3207696 A JP3207696 A JP 3207696A JP 20769691 A JP20769691 A JP 20769691A JP H0545689 A JPH0545689 A JP H0545689A
- Authority
- JP
- Japan
- Prior art keywords
- beta
- waveguide
- xsrxb2o4
- optical device
- nonlinear optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 6
- 239000000843 powder Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明はβ−Ba1 - x Srx
B2 O4 を用いた導波路型非線形光学デバイスに関す
る。This invention relates to β-Ba 1 -x Sr x
The present invention relates to a waveguide type non-linear optical device using B 2 O 4 .
【0002】[0002]
【従来の技術】β−BaB2 O4 は非線形光学定数が比
較的大きく、紫外域まで透明な優れた高調波発生材料で
あるが、従来はバルク単結晶としてしか使用されていな
かった。この使用方法では、入力パワーを大きくするこ
とだけが、エネルギー密度の上昇を図れる手段であっ
た。 2. Description of the Related Art β-BaB 2 O 4 is an excellent harmonic generating material that has a relatively large nonlinear optical constant and is transparent up to the ultraviolet region, but it has been conventionally used only as a bulk single crystal. In this method of use, increasing the input power was the only means for increasing the energy density.
【0003】[0003]
【発明が解決しようとする課題】β−BaB2 O4 を使
用した非線形光学素子で、入力パワーを上げずにエネル
ギー密度を上げるためには、光学導波路が必要であっ
た。In a nonlinear optical element using β-BaB 2 O 4 , an optical waveguide was required to increase the energy density without increasing the input power.
【0004】[0004]
【課題を解決するための手段】β−BaB2 O4 基板上
にβ−Ba1 - x Srx B2 O4 (但し、0<x≦0.
03)をエピタキシャル成長させて導波路を形成したこ
とを特徴とする。Means for Solving the Problems On a β-BaB 2 O 4 substrate, β-Ba 1 -x Sr x B 2 O 4 (where 0 <x ≦ 0.
03) is epitaxially grown to form a waveguide.
【0005】[0005]
【作用】以下、本発明の導波路型非線形光学デバイスに
ついて詳細に説明する。The waveguide type nonlinear optical device of the present invention will be described in detail below.
【0006】β−BaB2 O4 のBa位置をSrで一部
置換したβ−Ba1 - x Srx B2 O4 (0<x≦0.
03)は、表1のように、β−BaB2 O4 と比較して
屈折率が高いことが、本発明者の実験により初めて明ら
かになった。従って、β−BaB2 O4 基板上にβ−B
a1 - x Srx B2 O4 (0<x≦0.03)をエピタ
キシャル成長させて薄膜を形成すれば、両者の屈折率差
により光導波路を形成することができる。Β-Ba 1 -x Sr x B 2 O 4 (0 <x≤0..0) in which the Ba position of β-BaB 2 O 4 is partially substituted with Sr.
It was revealed for the first time by experiments by the present inventor that 03) has a higher refractive index than β-BaB 2 O 4 as shown in Table 1. Therefore, on the β-BaB 2 O 4 substrate, β-B
If a 1-x Sr x B 2 O 4 (0 <x ≦ 0.03) is epitaxially grown to form a thin film, an optical waveguide can be formed by the difference in refractive index between the two.
【0007】[0007]
【表1】 [Table 1]
【0008】β−Ba1 - x Srx B2 O4 はβ−Ba
B2 O4 と同様に紫外域まで透明で、非線形光学性を有
するので、薄膜導波路構造にすることにより、光の伝搬
は薄い膜内に制御され、入力パワーが小さくても容易に
エネルギー密度を高くすることができる。従って、小出
力光源の使用が可能な、短波長高効率レーザ光が得られ
る。なお、xが0.04になるとα相の比率が大きくな
り、屈折率が低下する。したがってxの値は0.03ま
でが適当である。Β-Ba 1 -x Sr x B 2 O 4 is β-Ba
Like B 2 O 4 , it is transparent to the ultraviolet region and has non-linear optical properties. Therefore, by adopting a thin film waveguide structure, the propagation of light is controlled within a thin film, and even if the input power is small, the energy density can be easily adjusted. Can be higher. Therefore, it is possible to obtain a short-wavelength high-efficiency laser light which can use a small output light source. When x becomes 0.04, the ratio of α phase increases and the refractive index decreases. Therefore, the value of x is preferably up to 0.03.
【0009】[0009]
【実施例】BaCl2 ・2H2 O1molとH3 BO3
2molとを2リットルの水に融解し、pHを12に調
整して、BaB2 O4 粉末を沈澱させた。この粉末を8
00℃で10時間焼成し、β−BaB2 O4 を得た。こ
の粉末を白金るつぼに充填して、通常の高周波引上げ炉
でβ−BaB2 O4 単結晶を育成した。引上げは、シー
ド回転数20rpm、引上げ速度3mm/h、空気中雰
囲気、育成方位はc軸で行なった。育成結晶をc面に切
断し、基板用に加工した。Example: 1 mol of BaCl 2 .2H 2 O and H 3 BO 3
Were thawed and 2mol into 2 l of water and adjusted to pH 12 to precipitate the BaB 2 O 4 powder. 8 this powder
At 00 ° C. and calcined for 10 hours to obtain a β-BaB 2 O 4. This powder was filled in a platinum crucible, and a β-BaB 2 O 4 single crystal was grown in a usual high-frequency pulling furnace. The pulling was performed at a seed rotation speed of 20 rpm, a pulling speed of 3 mm / h, an atmosphere in air, and a growing orientation was the c-axis. The grown crystal was cut into a c-plane and processed for a substrate.
【0010】β−Ba0 . 9 7 Sr0 . 0 3 B2 O4 粉
末は、0.97molのBaCl2 ・2H2 Oと0.0
3molのSrCl2 ・6H2 Oと2molのH3 BO
3 とを2リットルの水に融解し、pHを12に調整し、
沈澱を800℃10時間焼成して、作製した。[0010] β-Ba 0. 9 7 Sr 0. 0 3 B 2 O 4 powder, BaCl of 0.97mol 2 · 2H 2 O and 0.0
3 mol SrCl 2 .6H 2 O and 2 mol H 3 BO
Melt 3 and 2 liters of water, adjust pH to 12,
It was prepared by calcining the precipitate at 800 ° C. for 10 hours.
【0011】β−Ba0 . 9 7 Sr0 . 0 3 B2 O4 粉
末を液相エピタキシャル成長用融体原料とし、z板のβ
−BaB2 O4 を基板として、膜厚1μmのβ−BaB
2 O4 薄膜を作製した。[0011] β-Ba 0. 9 7 Sr 0. 0 3 B 2 O 4 powder was used as a liquid phase epitaxial growth melt material, of the z plate beta
-BaB 2 O 4 as a substrate, β-BaB with a film thickness of 1 μm
A 2 O 4 thin film was prepared.
【0012】この薄膜平面導波路の端面から入射させた
LD励起YAGレーザの1.064μm光は、導波路内
を伝搬し、β−BaB2 O4 の持つ非線形性によって、
出射端面から、0.532μmのSHG光を得た。The 1.064 μm light of the LD-pumped YAG laser incident from the end face of this thin film planar waveguide propagates in the waveguide, and due to the nonlinearity of β-BaB 2 O 4 ,
0.532 μm SHG light was obtained from the emission end face.
【0013】[0013]
【発明の効果】小さな入射パワーで高エネルギー密度を
得ることが可能となり、本発明により、β−Ba1 - x
Srx B2 O4 を利用した導波路型非線形光学デバイス
を作製できる。As described above, a high energy density can be obtained with a small incident power. According to the present invention, β-Ba 1 -x
A waveguide type nonlinear optical device using Sr x B 2 O 4 can be manufactured.
Claims (1)
1- x Srx B2 O4 (但し、0<x≦0.03)がエ
ピタキシャル成長し導波路を形成していることを特徴と
する導波路型非線形光学デバイス。1. A β-BaB 2 O 4 substrate on which β-Ba is formed.
1- x Sr x B 2 O 4 ( where, 0 <x ≦ 0.03) waveguide nonlinear optical device is characterized in that it forms the epitaxially grown waveguide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3207696A JPH0545689A (en) | 1991-08-20 | 1991-08-20 | Waveguide-type nonlinear optical device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3207696A JPH0545689A (en) | 1991-08-20 | 1991-08-20 | Waveguide-type nonlinear optical device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0545689A true JPH0545689A (en) | 1993-02-26 |
Family
ID=16544060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3207696A Pending JPH0545689A (en) | 1991-08-20 | 1991-08-20 | Waveguide-type nonlinear optical device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0545689A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06265949A (en) * | 1993-03-12 | 1994-09-22 | Agency Of Ind Science & Technol | Nonlinear optical material composition and its production |
US7593159B2 (en) | 2003-09-30 | 2009-09-22 | Panasonic Corporation | Display device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03245130A (en) * | 1990-02-23 | 1991-10-31 | Nec Corp | Waveguide type nonlinear optical device |
-
1991
- 1991-08-20 JP JP3207696A patent/JPH0545689A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03245130A (en) * | 1990-02-23 | 1991-10-31 | Nec Corp | Waveguide type nonlinear optical device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06265949A (en) * | 1993-03-12 | 1994-09-22 | Agency Of Ind Science & Technol | Nonlinear optical material composition and its production |
US7593159B2 (en) | 2003-09-30 | 2009-09-22 | Panasonic Corporation | Display device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980210 |