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JPH0545689A - Waveguide-type nonlinear optical device - Google Patents

Waveguide-type nonlinear optical device

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Publication number
JPH0545689A
JPH0545689A JP3207696A JP20769691A JPH0545689A JP H0545689 A JPH0545689 A JP H0545689A JP 3207696 A JP3207696 A JP 3207696A JP 20769691 A JP20769691 A JP 20769691A JP H0545689 A JPH0545689 A JP H0545689A
Authority
JP
Japan
Prior art keywords
beta
waveguide
xsrxb2o4
optical device
nonlinear optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3207696A
Other languages
Japanese (ja)
Inventor
Sachiko Imoto
祥子 井元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3207696A priority Critical patent/JPH0545689A/en
Publication of JPH0545689A publication Critical patent/JPH0545689A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a waveguide-type nonlinear optical device comprising high- efficient beta-Ba1-xSrxB2O4 by forming the waveguide by epitaxial growing of beta-Ba1-xSrxB2O4 (0<X<=0.03) on beta-BaB2O4. CONSTITUTION:beta-Ba1-xSrxB2O4 is obtd. by partly substituting Sr for the position of Ba in beta-BaB2O4 and it has higher refractive index than beta-BaB2O4. Thereby, by epitaxially growing beta-Ba1-xSrxB2O4 (0<X<=0.03) to form a thin film on a beta-BaB2O4 substrate, an optical waveguide can be formed owing to the difference of refractive indices of these. Thereby, a waveguide-type nonlinear optical device using beta-Ba1-xSrxB2O4 can be manufactured with which high energy density can be obtd. with small incident power.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明はβ−Ba1 - x Srx
2 4 を用いた導波路型非線形光学デバイスに関す
る。
This invention relates to β-Ba 1 -x Sr x
The present invention relates to a waveguide type non-linear optical device using B 2 O 4 .

【0002】[0002]

【従来の技術】β−BaB2 4 は非線形光学定数が比
較的大きく、紫外域まで透明な優れた高調波発生材料で
あるが、従来はバルク単結晶としてしか使用されていな
かった。この使用方法では、入力パワーを大きくするこ
とだけが、エネルギー密度の上昇を図れる手段であっ
た。
2. Description of the Related Art β-BaB 2 O 4 is an excellent harmonic generating material that has a relatively large nonlinear optical constant and is transparent up to the ultraviolet region, but it has been conventionally used only as a bulk single crystal. In this method of use, increasing the input power was the only means for increasing the energy density.

【0003】[0003]

【発明が解決しようとする課題】β−BaB2 4 を使
用した非線形光学素子で、入力パワーを上げずにエネル
ギー密度を上げるためには、光学導波路が必要であっ
た。
In a nonlinear optical element using β-BaB 2 O 4 , an optical waveguide was required to increase the energy density without increasing the input power.

【0004】[0004]

【課題を解決するための手段】β−BaB2 4 基板上
にβ−Ba1 - x Srx 2 4 (但し、0<x≦0.
03)をエピタキシャル成長させて導波路を形成したこ
とを特徴とする。
Means for Solving the Problems On a β-BaB 2 O 4 substrate, β-Ba 1 -x Sr x B 2 O 4 (where 0 <x ≦ 0.
03) is epitaxially grown to form a waveguide.

【0005】[0005]

【作用】以下、本発明の導波路型非線形光学デバイスに
ついて詳細に説明する。
The waveguide type nonlinear optical device of the present invention will be described in detail below.

【0006】β−BaB2 4 のBa位置をSrで一部
置換したβ−Ba1 - x Srx 2 4 (0<x≦0.
03)は、表1のように、β−BaB2 4 と比較して
屈折率が高いことが、本発明者の実験により初めて明ら
かになった。従って、β−BaB2 4 基板上にβ−B
1 - x Srx 2 4 (0<x≦0.03)をエピタ
キシャル成長させて薄膜を形成すれば、両者の屈折率差
により光導波路を形成することができる。
Β-Ba 1 -x Sr x B 2 O 4 (0 <x≤0..0) in which the Ba position of β-BaB 2 O 4 is partially substituted with Sr.
It was revealed for the first time by experiments by the present inventor that 03) has a higher refractive index than β-BaB 2 O 4 as shown in Table 1. Therefore, on the β-BaB 2 O 4 substrate, β-B
If a 1-x Sr x B 2 O 4 (0 <x ≦ 0.03) is epitaxially grown to form a thin film, an optical waveguide can be formed by the difference in refractive index between the two.

【0007】[0007]

【表1】 [Table 1]

【0008】β−Ba1 - x Srx 2 4 はβ−Ba
2 4 と同様に紫外域まで透明で、非線形光学性を有
するので、薄膜導波路構造にすることにより、光の伝搬
は薄い膜内に制御され、入力パワーが小さくても容易に
エネルギー密度を高くすることができる。従って、小出
力光源の使用が可能な、短波長高効率レーザ光が得られ
る。なお、xが0.04になるとα相の比率が大きくな
り、屈折率が低下する。したがってxの値は0.03ま
でが適当である。
Β-Ba 1 -x Sr x B 2 O 4 is β-Ba
Like B 2 O 4 , it is transparent to the ultraviolet region and has non-linear optical properties. Therefore, by adopting a thin film waveguide structure, the propagation of light is controlled within a thin film, and even if the input power is small, the energy density can be easily adjusted. Can be higher. Therefore, it is possible to obtain a short-wavelength high-efficiency laser light which can use a small output light source. When x becomes 0.04, the ratio of α phase increases and the refractive index decreases. Therefore, the value of x is preferably up to 0.03.

【0009】[0009]

【実施例】BaCl2 ・2H2 O1molとH3 BO3
2molとを2リットルの水に融解し、pHを12に調
整して、BaB2 4 粉末を沈澱させた。この粉末を8
00℃で10時間焼成し、β−BaB2 4 を得た。こ
の粉末を白金るつぼに充填して、通常の高周波引上げ炉
でβ−BaB2 4 単結晶を育成した。引上げは、シー
ド回転数20rpm、引上げ速度3mm/h、空気中雰
囲気、育成方位はc軸で行なった。育成結晶をc面に切
断し、基板用に加工した。
Example: 1 mol of BaCl 2 .2H 2 O and H 3 BO 3
Were thawed and 2mol into 2 l of water and adjusted to pH 12 to precipitate the BaB 2 O 4 powder. 8 this powder
At 00 ° C. and calcined for 10 hours to obtain a β-BaB 2 O 4. This powder was filled in a platinum crucible, and a β-BaB 2 O 4 single crystal was grown in a usual high-frequency pulling furnace. The pulling was performed at a seed rotation speed of 20 rpm, a pulling speed of 3 mm / h, an atmosphere in air, and a growing orientation was the c-axis. The grown crystal was cut into a c-plane and processed for a substrate.

【0010】β−Ba0 . 9 7 Sr0 . 0 3 2 4
末は、0.97molのBaCl2 ・2H2 Oと0.0
3molのSrCl2 ・6H2 Oと2molのH3 BO
3 とを2リットルの水に融解し、pHを12に調整し、
沈澱を800℃10時間焼成して、作製した。
[0010] β-Ba 0. 9 7 Sr 0. 0 3 B 2 O 4 powder, BaCl of 0.97mol 2 · 2H 2 O and 0.0
3 mol SrCl 2 .6H 2 O and 2 mol H 3 BO
Melt 3 and 2 liters of water, adjust pH to 12,
It was prepared by calcining the precipitate at 800 ° C. for 10 hours.

【0011】β−Ba0 . 9 7 Sr0 . 0 3 2 4
末を液相エピタキシャル成長用融体原料とし、z板のβ
−BaB2 4 を基板として、膜厚1μmのβ−BaB
2 4 薄膜を作製した。
[0011] β-Ba 0. 9 7 Sr 0. 0 3 B 2 O 4 powder was used as a liquid phase epitaxial growth melt material, of the z plate beta
-BaB 2 O 4 as a substrate, β-BaB with a film thickness of 1 μm
A 2 O 4 thin film was prepared.

【0012】この薄膜平面導波路の端面から入射させた
LD励起YAGレーザの1.064μm光は、導波路内
を伝搬し、β−BaB2 4 の持つ非線形性によって、
出射端面から、0.532μmのSHG光を得た。
The 1.064 μm light of the LD-pumped YAG laser incident from the end face of this thin film planar waveguide propagates in the waveguide, and due to the nonlinearity of β-BaB 2 O 4 ,
0.532 μm SHG light was obtained from the emission end face.

【0013】[0013]

【発明の効果】小さな入射パワーで高エネルギー密度を
得ることが可能となり、本発明により、β−Ba1 - x
Srx 2 4 を利用した導波路型非線形光学デバイス
を作製できる。
As described above, a high energy density can be obtained with a small incident power. According to the present invention, β-Ba 1 -x
A waveguide type nonlinear optical device using Sr x B 2 O 4 can be manufactured.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 β−BaB2 4 基板上にβ−Ba
1- x Srx 2 4 (但し、0<x≦0.03)がエ
ピタキシャル成長し導波路を形成していることを特徴と
する導波路型非線形光学デバイス。
1. A β-BaB 2 O 4 substrate on which β-Ba is formed.
1- x Sr x B 2 O 4 ( where, 0 <x ≦ 0.03) waveguide nonlinear optical device is characterized in that it forms the epitaxially grown waveguide.
JP3207696A 1991-08-20 1991-08-20 Waveguide-type nonlinear optical device Pending JPH0545689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3207696A JPH0545689A (en) 1991-08-20 1991-08-20 Waveguide-type nonlinear optical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3207696A JPH0545689A (en) 1991-08-20 1991-08-20 Waveguide-type nonlinear optical device

Publications (1)

Publication Number Publication Date
JPH0545689A true JPH0545689A (en) 1993-02-26

Family

ID=16544060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3207696A Pending JPH0545689A (en) 1991-08-20 1991-08-20 Waveguide-type nonlinear optical device

Country Status (1)

Country Link
JP (1) JPH0545689A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06265949A (en) * 1993-03-12 1994-09-22 Agency Of Ind Science & Technol Nonlinear optical material composition and its production
US7593159B2 (en) 2003-09-30 2009-09-22 Panasonic Corporation Display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03245130A (en) * 1990-02-23 1991-10-31 Nec Corp Waveguide type nonlinear optical device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03245130A (en) * 1990-02-23 1991-10-31 Nec Corp Waveguide type nonlinear optical device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06265949A (en) * 1993-03-12 1994-09-22 Agency Of Ind Science & Technol Nonlinear optical material composition and its production
US7593159B2 (en) 2003-09-30 2009-09-22 Panasonic Corporation Display device

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